WJA1030 +5V Active-Bias InGaP HBT Gain Block Product Features * * * * * * * * * Cascadable gain block 50 - 4000 MHz 15 dB Gain @ 1.9GHz +18 dBm P1dB @ 1.9GHz +37 dBm OIP3 @ 1.9GHz Operates from +5V @ 80mA * * * * Wireless Infrastructure General Purpose Cellular GSM, PCS, UMTS W-CDMA, TD-SCDMA, WiMAX Product Description Functional Diagram The WJA1030 is a cascadable gain block that offers high linearity in a low-cost surface-mount package. At 1.9 GHz, the WJA1030 typically provides 15 dB gain, +37 dBm OIP3, and +18 dBm P1dB. The device is housed in a RoHS-compliant SOT-89 industry-standard SMT package using a NiPdAu plating to eliminate the possibility of tin whiskering. GND 4 0.2dB gain flatness from 0.3-2.5GHz The WJA1030 consists of Darlington pair amplifiers using a high reliability InGaP/GaAs HBT process technology. Robust 1000V ESD, Class 1C The MMIC amplifier is internally matched to 50 and only RoHS-compliant SOT-89 package requires DC-blocking capacitors and a bias inductor for operation. An internal active bias is designed to enable stable performance over temperature. A dropping bias resistor is not required allowing the device to be biased Applications directly from a +5V supply voltage. Operational Bandwidth Test Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 (2) Output IP2 Noise Figure Device Voltage Device Current 2 3 GND RF OUT Function Input Output/Bias Ground Pin No. 1 3 2, 4 The broadband amplifier can be directly applied to various current and next generation wireless technologies such as GSM, CDMA, W-CDMA, WiBro, and WiMAX. The WJA1030 is ideal for general purpose applications such as LO buffering, IF amplification and pre-driver stages within the 50 to 4000 MHz frequency range. Specifications (1) Parameter 1 RF IN Typical Performance (3) Units Min MHz MHz dB dB dB dBm dBm dBm dB V mA 50 13.2 +34 71 Typ 1900 14.9 12 16 +18.3 +37 +44 6.1 5 80 Max Parameter Units 4000 Frequency S21 S11 S22 Output P1dB Output IP3 (2) MHz dB dB dB dBm dBm 500 14.4 -13 -16 +19.4 +37.9 900 14.4 -15 -19 +19.3 +37 1900 14.4 -30 -13 +18.3 +36.6 2140 14.4 -36 -12 +17.5 +36.3 2500 14.3 -33 -13 +16 +33.9 Output IP2 Noise Figure dBm dB +49.4 5.3 +48.3 5.5 +44 6.1 +41.4 6.3 +39.2 6.5 16.2 Typical 3. Listed typical performance parameters measured on evaluation board. 91 1. Test conditions: 25 C, Supply Voltage = +5 V, 50 System.. S-parameters and 3OIP measured at device pins. All other specifications measured on evaluation board. 2. 3OIP measured with two tones at an output power of 3 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. Not Recommended For New Designs Recommended replacement parts: TQP3M9028 Absolute Maximum Rating Parameter Rating Storage Temperature Supply Voltage Input Power jc (junction to paddle) Maximum Junction Temperature -55 to +150 C +6.5 V +24 dBm 80.6 C / W 150 C Operation of this device above any of these parameters may cause permanent damage. Ordering Information Part No. Description WJA1030 +5V Active Bias InGaP HBT Gain Block (lead-free/green/RoHS-compliant SOT-89 Package) Standard tape / reel size = 1000 pieces on a 7 reel Specifications and information are subject to change without notice TriQuint Semiconductor, Inc * Phone 503-615-9000 * FAX: 503-615-8900 * e-mail: info-sales@tqs.com * Web site: www.TriQuint.com Page 1 of 4 June 2011 WJA1030 +5V Active-Bias InGaP HBT Gain Block Typical Evaluation Board RF Performance Supply Bias = +5 V, Icc = 80 mA Return Loss Gain vs. Frequency Noise Figure vs. Frequency T = 25C 16 0 14 -10 12 12 10 10 9 -20 8 NF(dB) Gain (dB) S11, S22 (dB) 11 -30 7 6 5 8 4 -40 -40C +25C +85C S11 6 1000 2000 Frequency (MHz) 3000 4000 0 1000 2000 Frequency (MHz) 3000 0 4000 Freq = 1900MHz 34 40 34 OIP3 (dBm) O IP 3 (d B m ) 36 35 30 25 28 +25C 4 6 8 Output Power per tone (dBm) 0 10 1000 2000 Frequency (MHz) 3000 26 4.7 4000 4.8 4.9 5.0 5.1 5.2 Vcc (V) P1dB vs. Vcc 20 18 18 P1dB (dBm) 20 P1dB(dBm) 50 16 45 40 16 14 14 35 12 12 -40C 30 +25C +85C 10 1000 30 Freq = 1900MHz Pout=3 dBm/tone 0 32 P1dB vs. Frequency OIP2 vs. Frequency 55 4000 +85C 20 2 3000 28 -40C 26 2000 Frequency(MHz) Freq = 1900MHz 45 30 +85C 38 36 32 +25C OIP3 vs. Vcc Pout=3 dBm/tone 50 38 0 1000 OIP3 vs. Frequency OIP3 vs. Output Power OIP3 (dBm) -40C 2 -50 0 OIP2 (dBm) 3 S22 2000 3000 Frequency (MHz) 0 1000 2000 Frequency(MHz) 3000 4000 10 4.7 4.8 4.9 5.0 5.1 5.2 Vcc (V) Icc vs. Temperature Icc vs. Vcc Vcc = +5V 120 85 100 Icc (mA) Icc (mA) 80 75 70 80 60 40 -40C 65 -50 -25 0 25 Temperature (C) 50 75 100 20 4.0 4.5 +25C 5.0 Vcc (V) +85C 5.5 6.0 Specifications and information are subject to change without notice TriQuint Semiconductor, Inc * Phone 503-615-9000 * FAX: 503-615-8900 * e-mail: info-sales@tqs.com * Web site: www.TriQuint.com Page 2 of 4 June 2011 WJA1030 +5V Active-Bias InGaP HBT Gain Block Vcc = 5.00V Icc = 80 mA Application Circuit R4 0 C3 Bypass Capacitor L1 RF Choke RF IN RF OUT WJA1030 C1 Blocking Capacitor R1 0 R2 0 C2 Blocking Capacitor Recommended Component Values (1) Ref. Name Value / Type L1 470 nH ferrite core wire wound inductor (2) C1, C2 1000 pF NPO chip capacitor C3 0.018 F chip capacitor R1, R2, R4 0 (3) C4 Do Not Place (3) 1. 2. 3. Size 0805 0603 0603 0603 The listed values are contained on the evaluation board to achieve optimal broadband performance For lower cost and performance (500 - 4000 MHz) option use 18 nH air core wire wound inductor. Place holders for the 0 resistors and "Do Not Place" references are not needed for final design. Typical Device Data S-Parameters (Vdevice = +5 V, ICC = 80 mA, T = 25 C, calibrated to device leads) Freq (GHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) 10 -10.83 -58.08 19.46 164.89 -22.65 50 -12.23 -141.31 15.67 162.49 -19.17 100 -12.34 -161.16 14.97 166.07 -18.94 200 -12.35 -173.41 14.68 163.99 -18.79 400 -12.20 178.57 14.70 155.01 -18.77 600 -11.88 173.95 14.68 144.15 -18.79 800 -11.82 169.03 14.66 133.15 -18.73 1000 -11.96 160.89 14.73 122.08 -18.71 1200 -12.09 151.00 14.71 109.83 -18.72 1400 -12.00 141.47 14.72 98.56 -18.56 1600 -12.08 132.47 14.81 86.09 -18.56 1800 -12.41 124.96 14.89 73.48 -18.41 2000 -13.68 114.29 14.98 61.01 -18.32 2200 -15.85 96.26 14.98 47.36 -18.25 2400 -18.90 65.65 14.84 33.24 -18.25 2600 -21.35 20.69 14.76 18.24 -18.22 2800 -20.80 -41.45 14.49 3.96 -18.35 3000 -16.35 -85.03 14.02 -12.00 -18.44 3200 -12.38 -108.85 13.47 -27.18 -18.79 3400 -9.61 -124.63 12.65 -42.43 -19.07 3600 -7.75 -139.93 11.69 -56.65 -19.52 3800 -6.55 -155.31 10.76 -69.84 -19.79 4000 -5.60 -170.19 9.64 -82.81 -20.16 S12 (ang) 22.89 8.66 3.19 -1.22 -6.50 -11.24 -15.56 -19.47 -23.66 -28.45 -33.24 -37.07 -42.56 -47.72 -53.56 -59.41 -66.15 -72.34 -78.26 -84.90 -89.74 -93.89 -98.32 S22 (dB) -7.78 -13.74 -15.40 -16.18 -16.66 -16.93 -17.11 -16.77 -16.57 -16.37 -16.52 -16.66 -16.10 -14.74 -12.91 -11.52 -10.38 -9.38 -8.30 -7.42 -6.60 -6.01 -5.79 S22 (ang) -42.25 -117.02 -144.57 -163.35 -176.66 174.89 171.49 172.56 175.62 178.74 179.44 179.88 -177.54 -177.03 -177.60 -179.71 176.84 170.50 162.73 153.42 145.55 140.59 134.97 Device S-parameters are available for Download from the website at http://www.triquint.com Specifications and information are subject to change without notice TriQuint Semiconductor, Inc * Phone 503-615-9000 * FAX: 503-615-8900 * e-mail: info-sales@tqs.com * Web site: www.TriQuint.com Page 3 of 4 June 2011 WJA1030 +5V Active-Bias InGaP HBT Gain Block Mechanical Information This package is lead-free/Green/RoHS-compliant. It is compatible with both lead-free (maximum 260 C reflow temperature) and leaded (maximum 245 C reflow temperature) soldering processes. The plating material on the leads is NiPdAu. Outline Drawing Product Marking The WJA1030 will be marked with an "A1030" designator with a lot code marked below the part designator. The "Y" represents the last digit of the year the part was manufactured, the "XXX" is an auto-generated number, and "Z" refers to a wafer number in a lot batch. A1030 Tape and reel specifications for this part are located on the website in the "Application Notes" section. MSL / ESD Rating Land Pattern ESD Rating: Value: Test: Standard: Class 1C Passes 1000V min. Human Body Model (HBM) JEDEC Standard JESD22-A114 ESD Rating: Value: Test: Standard: Class IV Passes 1000V min. Charged Device Model (CDM) JEDEC Standard JESD22-C101 MSL Rating: Level 3 at +260 C convection reflow Standard: JEDEC Standard J-STD-020 Mounting Config. Notes 1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135") diameter drill and have a final plated thru diameter of .25 mm (.010"). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 4. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 5. RF trace width depends upon the PC board material and construction. 6. Use 1 oz. Copper minimum. 7. All dimensions are in millimeters (inches). Angles are in degrees. Specifications and information are subject to change without notice TriQuint Semiconductor, Inc * Phone 503-615-9000 * FAX: 503-615-8900 * e-mail: info-sales@tqs.com * Web site: www.TriQuint.com Page 4 of 4 June 2011