AGR19045EF 45 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19045EF is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz-- 1990 MHz), global system for mobile communication (GSM/EDGE), time-division multiple access (TDMA), and single-carrier or multicarrier class AB power amplifier applications. GSM Features Typical performance over entire GSM band: -- P1dB: 50 W typical. -- Power gain @ P1dB = 14.0 dB continuous wave (CW). -- Efficiency @ P1dB = 54% typical CW. -- Return loss: -10 dB. Device Performance Features High-reliability, gold-metalization process. Low hot carrier injection (HCI) induced bias drift over 20 years. Figure 1. AGR19045EF (flanged) Package Typical two carrier N-CDMA performance: VDD = 28 V, IDQ = 550 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz, IS-95 CDMA (pilot, sync, paging, traffic codes 8--13). Peak/average (P/A) = 9.72 dB at 0.01% probability on CCDF. 1.2288 MHz transmission bandwidth (BW). Adjacent channel power ratio (ACPR) measured over 30 kHz BW at f1 - 885 kHz and f2 + 885 kHz. Third-order intermodulation distortion (IM3) measured over a 1.2288 MHz BW at f1 - 2.5 MHz and f2 + 2.5 MHz: -- Output power (POUT): 9.5 W. -- Power gain: 15 dB. -- Efficiency: 24.8%. -- IM3: -34.5 dBc. -- ACPR: -49.5 dBc. EDGE Features Typical EDGE performance, 1990 MHz, 26 V, IDQ = 400 mA: -- Output power (POUT): 18 W typical. -- Power gain: 14.5 dB. -- Efficiency: 35% typical. -- Spectral regrowth: @ 400 kHz = -62 dBc. @ 600 kHz = -74 dBc. -- Error vector magnitude (EVM) = 2.0%. Internally matched. High gain, efficiency, and linearity. Integrated ESD protection. Device can withstand 10:1 voltage standing wave ratio (VSWR) at 28 Vdc, 1930 MHz, 45 W CW output power. Large signal impedance parameters available. ESD Rating* AGR19045EF HBM MM CDM Minimum (V) 500 50 1500 Class 1B A 4 * Although electrostatic discharge (ESD) protection circuitry has been designed into this device, proper precautions must be taken to avoid exposure to ESD and electrical overstress (EOS) during all handling, assembly, and test operations. PEAK Agere Devices employs a human-body model (HBM), a machine model (MM), and a charged-device model (CDM) qualification requirement in order to determine ESD-susceptibility limits and protection design evaluation. ESD voltage thresholds are dependent on the circuit parameters used in each of the models, as defined by JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and JESD22-C101A (CDM) standards. Caution: MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. AGR19045EF 45 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor Electrical Characteristics Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case Symbol RJC Value 1.5 Unit C/W Symbol VDSS VGS PD -- TJ TSTG Value 65 -0.5, 15 115 0.67 200 -65, 150 Unit Vdc Vdc W W/C C C Table 2. Absolute Maximum Ratings* Parameter Drain-source Voltage Gate-source Voltage Total Dissipation at TC = 25 C Derate Above 25 C Operating Junction Temperature Storage Temperature Range * Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability. Recommended operating conditions apply unless otherwise specified: TC = 30 C. Table 3. dc Characteristics Parameter Symbol Min Typ V(BR)DSS 65 -- IDSS Max Unit Off Characteristics 200A = 38 A) Drain-source Breakdown Voltage (VGS = 0 V, ID = Gate-source Leakage Current (VGS = 5 V, VDS = 0 V) Zero Gate Voltage Drain Leakage Current (VDS = 28 V, VGS = 0 V) IGSS -- -- Vdc -- -- -- 1.3 75 4 Adc GFS -- 3.0 -- S VGS(Q) -- 3.7 Adc On Characteristics Forward Transconductance (VDS = 10 V, ID = 0.4 A) Gate Threshold Voltage (VDS = 10 V, ID = 130 A) VGS(TH) Drain-source On-voltage (VGS = 10 V, ID = 0.4 A) VDS(ON) Gate Quiescent Voltage (VDS = 28 V, ID = 400 mA) -- -- -- 4.8 Vdc 0.3 -- Vdc -- Vdc AGR19045EF 45 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor Electrical Characateristics (continued) Recommended operating conditions apply unless otherwise specified: TC = 30 C. Table 4. RF Characteristics Parameter Dynamic Characteristics Symbol Min CRSS Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) (This part is internally matched on both the input and output.) Test Fixture) Functional Tests (in Supplied Agere Systems Supplied Test Fixture) GPS Common-source Amplifier Power Gain (VDD = 28 Vdc, POUT = 9 W average, 2-Carrier N-CDMA, IDQ = 550 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz) Drain Efficiency (VDD = 28 Vdc, POUT = 9 W average, 2-Carrier N-CDMA, IDQ = 550 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz) Third-order Intermodulation Distortion IM3 (VDD = 28 Vdc, POUT = 9 W average, 2-Carrier N-CDMA, IDQ = 550 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz; IM3 measured in a 1.228 MHz integration bandwidth centered at f1 - 2.5 MHz and f2 + 2.5 MHz, referenced to the carrier channel power) ACPR Adjacent Channel Power Ratio (VDD = 28 Vdc, POUT = 9 W average, 2-Carrier N-CDMA, IDQ = 550 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz; ACPR measured in a 30 kHz integration bandwidth centered at f1 - 885 kHz and f2 + 885 kHz, referenced to the carrier channel power) IRL Input Return Loss (VDD = 28 Vdc, POUT = 9 W average, 2-Carrier N-CDMA, IDQ = 550 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz) Output Power at 1 dB Gain Compression P1dB (VDD = 28 V, POUT = 45 W CW, f = 1990 MHz, IDQ = 400 mA) Ruggedness (VDD = 28 V, POUT = 45 W CW, IDQ = 400 mA, f = 1930 MHz, VSWR = 10:1 [all phase angles]) Typ Max Unit -- 1.0 -- pF 14.5 15.0 -- dB -- 24.8 -- % -- -34.5 -- dBc -- -49.5 -- dBc -- -10 -- dB 45 50 -- W No degradation in output power. AGR19045EF 45 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor Test Circuit Illustrations for AGR19045EF VDD FB1 VGG C1 R1 C2 Z1 C3 Z2 Z14 C4 C6 Z13 Z3 Z4 Z5 Z7 C5 C23 C22 Z8 C12 Z9 1 Z6 2 3 RF INPUT C13 C14 Z10 C15 C20 C16 C17 C18 Z11 C21 DUT C19 Z12 RF OUTPUT C7 PINS: 1. DRAIN, 2. GATE, 3. SOURCE A. Schematic 2 3 1 B. Component Layout Parts List: Microstrip line: Z1, 0.320 in. x 0.067 in.; Z2, 0.185 in. x 0.067 in.; Z3, 0.345 in. x 0.067 in.; Z4, 0.250 in. x 0.160 in.; Z5, 0.180 in. x 0.260 in.; Z6, 0.400 in. x 0.735 in.; Z7, 0.355 in. x 0.840 in.; Z8, 0.120 in. x 0.280 in.; Z9, 0.525 in. x 0.130 in.; Z10, 0.145 in. x 0.067 in.; Z11, 0.245 in. x 0.067 in.; Z12, 0.290 in. x 0.067 in.; Z13, 0.370 in. x 0.030 in.; Z14, 0.280 in. x 0.050 in. (R) ATC B case chip capacitors: C5, C12, C22: 8.2 pF; C6, C20: 10 pF; C13: 1000 pF. ATC S case chip capacitor: C21: 0.2 pF (R) Kemet B case chip capacitors: C2, C16: 0.1 F CDR33BX104AKWS. Tantalum capacitor: C17, 1 F, 50 V, T491C. (R) Vitramon 1206: C4, C14: 22000 F. (R) Johanson Giga-Trim variable capacitor C7: 0.4 pF--2.5 pF. (R) Murata 0805: C3, C15: 0.01 F, GRM40X7R103K100AL. (R) Sprague tantalum surface-mount chip capacitor: C1, C18, C19, C23: 22 F, 35 V. (R) Fair-Rite ferrite bead: FB1: 2743019447. Fixed film chip resistor: R1: 12 , 0.25 W, 0.08 x 0.13. PCB etched circuit boards. (R) Taconic ORCER RF-35: board material, 1 oz. copper, 30 mil thickness, r = 3.5. Figure 2. AGR19045EF Test Circuit AGR19045EF 45 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor U CT 8 0.6 90 IN D 0. 10 0.1 0.4 20 50 20 10 5.0 4.0 3.0 2.0 1.8 1.6 1.4 1.2 50 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.2 0.2 20 0.4 0.1 o) jB/ Y E (NC IV CT U ES 1. 0 TA EP SC 0 0.11 -100 -90 0.13 0.1 9 0.0 -1 40 06 -70 5 0. 07 30 -1 43 0. 8 0.0 2 0.4 0.4 1 0.4 0.39 0.38 F 0.37 0.12 0. 2. -110 -65 1.8 5 0.36 0.6 1.6 1.4 1.2 1.0 -4 0.14 -80 0.35 0.9 0 -4 0.15 0 -70 -5 6 4 0 -12 (-j 0.0 Z X/ 0.7 0.1 0.3 0.8 35 5 3 -60 -5 0.3 7 VE -60 0.1 CA P AC I TI CE CO M T 5 ,O o) R 0.2 -30 32 -75 IN DU 18 0. RE AC TA N EN 0. 0 -5 -25 0. PO N 4 0. 0.4 31 0. 19 0. 4 0.6 0 3. -20 5 0.8 0.4 4.0 6 0.4 4 0.0 0 -15 -80 0 1. 0.3 0 f1 -15 0.2 ZS f3 -4 4 0. 0.2 8 f1 0.2 2 0.3 ZL 0.2 9 0.2 1 -30 f3 5.0 -85 8 0. 0.2 -10 0.48 10 0.6 -20 D< RD L OA TOW A 7 TH S 0.4 -170 EN G V EL A W < -90 -160 RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo) 50 0.49 0.25 0.2 6 0.24 0.27 0.23 0.25 0.24 0.26 0.23 0.27 REFL ECTI ON COEFFI CI EN T I N D E G REES L E OF ANG I SSI ON COEFFI CI EN T I N TRA N SM D EGR EES L E OF ANG Z0 = 10 0.0 > W A V EL E N GTH S TOW A RD 0.0 0.49 0.48 180 170 Typical Performance Characteristics MHz (f) 1930 (f1) 1960 (f2) 1990 (f3) ZL ZS (Complex Source Impedance) (Complex Optimum Load Impedance) 2.79 - j8.63 4.94 - j6.00 2.64 - j8.20 4.82 - j5.91 2.38 - j7.78 4.47 - j5.79 Note: ZL was chosen based on trade-offs between gain, output power, drain efficiency, and intermodulation distortion. GATE (2) ZS DRAIN (1) ZL SOURCE (3) INPUT MATCH DUT OUTPUT MATCH Figure 3. Series Equivalent Input and Output Impedances AGR19045EF 45 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor Typical Performance Characteristics (continued) 50 17 P1dB= 47.37dBm (54.59W) 16 45 P3dB= 48.20dBm (66.03W) POUT(dBm)Z GPS 40 15 14 GPS(dB)Z 13 12 35 11 POUT 10 30 9 8 25 15 20 25 Test Conditions: VDD = 28 Vdc, IDQ = 400 mA, CW center frequency = 1960 MHz. PIN(dBm)Z 30 7 40 35 50 -25 45 -30 40 -35 35 -40 30 -45 25 -50 20 -55 GPS 15 10 2.25 MHz 885 kHz -60 -65 1.25 MHz 5 -70 0 -75 25 30 35 POUT (dBm) AVERAGEZ 40 45 ADJACENT CHANNEL POWER (dBc)Z GPS (dB), (%)Z Figure 4. CW POUT vs. PIN Test Conditions: VDD = 28 V, IDQ = 550 mA, f1 = 1960 MHz, N-CDMA, 2.5 MHz @ 1.2288 MHz bandwidth. Peak/Average = 9.72 dB @ 0.01% probability (CCDF). Channel spacing (bandwidth): 885 kHz (30 kHz), 1.25 MHz (12.5 kHz), 2.25 MHz (1 MHz). Figure 5. N-CDMA ACPR, Power Gain, and Drain Efficiency vs. Power AGR19045EF 45 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor 60 -10 50 -20 40 -30 55 GPS(dB), (%)Z 45 35 30 -40 IM3 25 GPS 20 15 ACP 10 -60 5 0 30 35 POUT (dBm)Z -50 IM3 (dBc), ACPR(dBc) Z Typical Performance Characteristics (continued) -70 45 40 Test Conditions: VDD = 28 V, IDQ = 550 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz. 2 x N-CDMA, 2.5 MHz @ 1.2288 MHz bandwidth. Peak/average = 9.72 dB @ 0.01% probability (CCDF). Channel spacing (bandwidth); ACPR: 885 kHz (30 kHz), IM3: 2.5 MHz (1.2288 MHz). Figure 6. 2-Carrier N-CDMA ACPR, IM3, Power Gain, and Drain Efficiency vs. Power IDQ = 700 mA IDQ = 600 mA 15.25 IDQ = 550 mA GPS(dB)Z IDQ = 500 mA IDQ = 400 mA 14.25 IDQ = 300 mA 13.25 30 35 POUT (dBm)Z 40 Test Conditions: VDD = 28 VDC, f1 = 1958.75 MHz, f2 = 1961.25 MHz, 2-carrier N-CDMA measurement. Figure 7. 2-Carrier N-CDMA, GPS vs. POUT 45 AGR19045EF 45 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor Typical Performance Characteristics (continued) -35 -40 ACPR (dBc)Z -45 IDQ = 300 mA -50 IDQ = 400 mA -55 IDQ = 700 mA IDQ = 600 mA -60 -65 -70 IDQ = 550 mA IDQ = 500 mA 30 35 40 45 POUT (dBm)Z Test Conditions: VDD = 28 VDC, f1 = 1958.75 MHz, f2 = 1961.25 MHz, 2-carrier N-CDMA measurement. Figure 8. ACPR vs. POUT -20 -25 IM3 (dBc)Z -30 IDQ = 300 mA -35 -40 IDQ = 400 mA IDQ = 700 mA -45 IDQ = 600 mA -50 IDQ = 500 mA -55 30 IDQ = 550 mA 35 POUT (dBm)Z Test Conditions: VDD = 28 VDC, f1 = 1958.75 MHz, f2 = 1961.25 MHz, 2-carrier N-CDMA measurement. Figure 9. IM3 vs. POUT 40 45 AGR19045EF 45 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor 55 -25 50 -30 45 -35 40 -40 35 -45 30 -50 25 -55 400 kHz 20 -60 15 -65 10 600 kHz GPS -70 5 0 -75 EVM 0 5 10 15 20 25 POUT (W) AVERAGEZ SPECTRAL REGROWTH (dBc)Z GPS (dB), (%), EVM (%)Z Typical Performance Characteristics (continued) 30 35 40 -80 Test Conditions: VDD = 26 Vdc, IDQ = 400 mA, f = 1960 MHz, modulation = GSM/EDGE. 55 -25 50 -30 45 -35 40 -40 35 -45 30 -50 25 -55 20 400 kHz 15 10 -65 -70 600 kHz 5 0 -60 GPS -75 EVM 0 5 10 15 20 25 POUT (W) AVERAGEZ SPECTRAL REGROWTH(dBc)Z GPS(dB), (%), EVM (%)Z Figure 10. GSM/EDGE Power Gain, Drain Efficiency, Spectral Regrowth, and EVM Average vs. P OUT 30 35 -80 40 Test Conditions: VDD = 28 Vdc, IDQ = 400 mA, f = 1960 MHz, modulation = GSM/EDGE. Figure 11. GSM/EDGE Power Gain, Drain Efficiency, Spectral Regrowth, and EVM Average vs. POUT AGR19045EF 45 W, 1930 MHz--1990 MHz, PCS LDMOS RF Power Transistor Package Dimensions All dimensions are in inches. Tolerances are 0.005 in. unless specified. AGR19045EF PINS: 1. DRAIN 2. GATE 3. SOURCE 1 1 PEAK DEVICES AAGR19045XF GR21045F YYWWLL XXXXX YYWW LL ZZZZZZZ ZZZZZZZ 3 2 3 2 Label Notes: M before the part number denotes model program. X before the part number denotes engineering prototype. The last two letters of the part number denote wafer technology and package type. YYWWLL is the date code including place of manufacture: year year work week (YYWW), LL = location (AL = Allentown, PA; T = Thailand). XXXXX = five-digit wafer lot number. ZZZZZZZ = seven-digit assembly lot number on production parts. ZZZZZZZZZZZZ = 12-digit (five-digit lot, two-digit wafer, and five-digit serial number) on models and engineering prototypes.