AGR19045EF
45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Introduction
The AGR19045EF isa 45 W, 28 VN-channel later-
ally diffused metal oxide semiconductor (LDMOS)
RF power field effect transistor (FET) suitable for
personal communication service (PCS) (1930 MHz—
1990 MHz), global system for mobile communication
(GSM/EDGE), time-division multiple access (TDMA),
and single-carrier or multicarrier class AB power
amplifier applications.
Figure 1. AGR19045EF (flanged) Package
Typical two carrier N-CDMA performance: VDD =
28 V, IDQ = 550 mA, f1 = 1958.75 MHz, f2 =
1961.25 MHz, IS-95 CDMA (pilot, sync, paging,
traffic codes 8—13).Peak/average (P/A) = 9.72 dB
at 0.01% probability on CCDF. 1.2288 MHz trans-
mission bandwidth (BW). Adjacent channel power
ratio (ACPR) measured over 30 kHz BW at f1 –
885 kHz and f2 + 885 kHz. Third-order intermodu-
lation distortion (IM3)measured over a
1.2288 MHz BW at f1 – 2.5 MHz and f2 + 2.5 MHz:
— Output power (POUT): 9.5 W.
— Powergain: 15dB.
— Efficiency: 24.8%.
— IM3: –34.5 dBc.
— ACPR: –49.5 dBc.
EDGE Features
Typical EDGE performance,
1990 MHz, 26 V, IDQ = 400 mA:
— Output power (POUT): 18 W typical.
— Powergain: 14.5 dB.
— Efficiency: 35% typical.
— Spectral regrowth:
@ ±400 kHz = –62 dBc.
@ ±600 kHz = –74 dBc.
— Error vector magnitude (EVM)= 2.0%.
GSM Features
Typical performance over entire GSM band:
— P1dB: 50 W typical.
—Power gain @ P1dB = 14.0 dB continuous wave
(CW).
— Efficiency @ P1dB = 54% typical CW.
— Return loss: –10 dB.
Device Performance Features
High-reliability, gold-metalization process.
Low hot carrier injection (HCI)induced bias drift
over 20 years.
Internally matched.
High gain, efficiency, and linearity.
Integrated ESD protection.
Device can withstand 10:1 voltage standing wave
ratio (VSWR) at 28 Vdc, 1930 MHz, 45 W CW out-
put power.
Large signal impedance parameters available.
ESD Rating*
* Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
taken to avoid exposure to ESD and electrical overstress (EOS)
during all handling, assembly,and test operations. Agere
employsa human-body model (HBM), a machine model (MM),
and a charged-device model (CDM) qualification requirement in
order to determine ESD-susceptibility limitsand protection
design evaluation. ESD voltage thresholds are dependent on the
circuit parameters used in each of the models, as defined by
JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and
JESD22-C101A (CDM) standards.
Caution: MOS devices are susceptible to damage from elec-
trostatic charge. Reasonable precautions in han-
dling and packaging MOS devices should be
observed.
AGR19045EF Minimum (V) Class
HBM 500 1B
MM 50 A
CDM 1500 4
PEAK Devices
45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
AGR19045EF
Electrical Characteristics
Table 1. Thermal Characteristics
Table 2. Absolute Maximum Ratings*
* Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only.
Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the
data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability.
Recommended operating conditions apply unless otherwise specified: TC = 30 °C.
Table 3. dc Characteristics
Parameter Symbol Value Unit
Thermal Resistance, Junction to Case RθJC 1.5 °C/W
Parameter Symbol Value Unit
Drain-source Voltage VDSS 65 Vdc
Gate-source Voltage VGS –0.5, 15 Vdc
Total Dissipation at TC = 25 °C PD115 W
Derate Above 25 °C — 0.67 W/°C
Operating Junction Temperature TJ200 °C
Storage Temperature Range TSTG –65, 150 °C
Parameter Symbol Min Typ Max Unit
Off Characteristics
Drain-source Breakdown Voltage (VGS =0V, ID=38µA) V(BR)DSS 65 — — Vdc
Gate-source Leakage Current (VGS = 5 V, VDS =0V) IGSS — — 1.3 µAdc
Zero Gate Voltage Drain Leakage Current (VDS = 28 V, VGS =0V) IDSS ——4µAdc
On Characteristics
Forward Transconductance (VDS = 10 V, ID= 0.4 A) GFS — 3.0 — S
Gate Threshold Voltage (VDS =10V, ID= 130 µA) VGS(TH) — — 4.8 Vdc
Gate Quiescent Voltage (VDS = 28 V, ID= 400 mA) VGS(Q) — 3.7 — Vdc
Drain-source On-voltage (VGS =10V, ID= 0.4 A) VDS(ON) — 0.3 — Vdc
75
= 200µA
AGR19045EF
45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Electrical Characateristics (continued)
Recommended operating conditions apply unless otherwise specified: TC = 30 °C.
Table 4. RF Characteristics
Parameter Symbol Min Typ Max Unit
Dynamic Characteristics
Reverse Transfer Capacitance
(VDS = 28 V, VGS = 0, f = 1.0 MHz)
(This part is internally matched on both the input and output.)
CRSS — 1.0 — pF
Functional Tests (in Agere Systems Supplied Test Fixture)
Common-source Amplifier Power Gain
(VDD =28Vdc, POUT = 9 W average, 2-Carrier N-CDMA, IDQ = 550 mA,
f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz)
GPS 14.5 15.0 — dB
Drain Efficiency
(VDD =28Vdc, POUT = 9 W average, 2-Carrier N-CDMA, IDQ = 550 mA,
f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz)
η— 24.8 — %
Third-order Intermodulation Distortion
(VDD =28Vdc, POUT = 9 W average, 2-Carrier N-CDMA, IDQ = 550 mA,
f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz; IM3
measured in a 1.228 MHz integration bandwidth centered at
f1 – 2.5 MHz and f2 + 2.5 MHz, referenced to the carrier channel power)
IM3 — –34.5 — dBc
Adjacent Channel Power Ratio
(VDD =28Vdc, POUT = 9 W average, 2-Carrier N-CDMA, IDQ = 550 mA,
f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz;
ACPR measured in a 30 kHz integration bandwidth centered at f1 – 885 kHz
and f2 + 885 kHz, referenced to the carrier channel power)
ACPR — –49.5 — dBc
Input Return Loss
(VDD =28Vdc, POUT = 9 W average, 2-Carrier N-CDMA, IDQ = 550 mA,
f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz)
IRL — –10 — dB
Output Power at 1 dB Gain Compression
(VDD =28V, POUT = 45 W CW, f = 1990 MHz, IDQ = 400 mA)
P1dB 45 50 — W
Ruggedness
(VDD =28V, POUT = 45 W CW, IDQ = 400 mA, f = 1930 MHz, VSWR = 10:1
[all phase angles])
ΨNo degradation in output
power.
(in Supplied Test Fixture)
45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
AGR19045EF
Test Circuit Illustrations for AGR19045EF
A. Schematic
B. Component Layout
Parts List:
■Microstrip line: Z1, 0.320 in. x 0.067 in.; Z2, 0.185 in. x 0.067 in.; Z3, 0.345 in. x 0.067 in.; Z4, 0.250 in. x 0.160 in.; Z5, 0.180 in. x 0.260 in.;
Z6, 0.400 in. x 0.735 in.; Z7, 0.355 in. x 0.840 in.; Z8, 0.120 in. x 0.280 in.; Z9, 0.525 in. x 0.130 in.; Z10, 0.145 in. x 0.067 in.;
Z11, 0.245 in. x 0.067 in.; Z12, 0.290 in. x 0.067 in.; Z13, 0.370 in. x 0.030 in.; Z14, 0.280 in. x 0.050 in.
■ATC® B case chip capacitors: C5, C12, C22: 8.2 pF; C6, C20: 10 pF; C13: 1000 pF.
■ATC S case chip capacitor: C21: 0.2 pF
■Kemet® B case chip capacitors: C2, C16: 0.1 µF CDR33BX104AKWS. Tantalum capacitor: C17, 1 µF, 50 V, T491C.
■Vitramon® 1206: C4, C14: 22000 µF.
■Johanson Giga-Trim®variable capacitor C7: 0.4 pF—2.5 pF.
■Murata®0805: C3, C15: 0.01 µF, GRM40X7R103K100AL.
■Sprague®tantalum surface-mount chip capacitor: C1, C18, C19, C23: 22 µF, 35 V.
■Fair-Rite®ferrite bead: FB1: 2743019447.
■Fixed film chip resistor: R1: 12 Ω, 0.25 W, 0.08 x 0.13.
■PCB etched circuit boards.
■Taconic® ORCER RF-35: board material, 1 oz. copper, 30 mil thickness, εr = 3.5.
Figure 2. AGR19045EF Test Circuit
DUT
R1
C3 Z13
C6 Z3
Z1
C20
Z7 Z8 Z10 Z11
RF INPUT
VGG
VDD
RF
Z6
Z4
FB1
Z14
C4
C15
3
1
2
PINS: 1. DRAIN, 2. GATE, 3. SOURCE
C23 C12 C14C13
C1 C2 C5
C22
Z2
C7
Z5
Z9 Z12
OUTPUT
C19C16 C18C17
C21
231
AGR19045EF
45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Typical Performance Characteristics
Note: ZL was chosen based on trade-offs between gain, output power, drain efficiency, and intermodulation distortion.
Figure 3. Series Equivalent Input and Output Impedances
MHz (f) ZSΩ
(Complex Source Impedance)
ZLΩ
(Complex Optimum Load Impedance)
1930 (f1) 2.79 – j8.63 4.94 – j6.00
1960 (f2) 2.64 – j8.20 4.82 – j5.91
1990 (f3) 2.38 – j7.78 4.47 – j5.79
0.1
0.1
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1.0 1.0
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1.0
-20
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-60
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-90
-100
-110
-120
-130
-140
-150
-160
170
-170
180
±
90-90
-85
-80
-75
-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
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0.3
0.31
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0.38
0.39
0.4
0.41
0.42
0.43
0.44
0.45
0.46
0.47
0.48
0.48
0.49
0.49
0.0
0.0
A
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RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo)
F
ZS
f3 f1
ZL
f1
f3
Z0 = 10 Ω
DUT
ZSZL
INPUT MATCH OUTPUT MATCH
DRAIN (1)
SOURCE (3)
GATE (2)
45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
AGR19045EF
Typical Performance Characteristics (continued)
Test Conditions:
VDD = 28 Vdc, IDQ = 400 mA, CW center frequency = 1960 MHz.
Figure 4. CW POUT vs. PIN
Test Conditions:
VDD = 28 V,IDQ = 550 mA, f1 = 1960 MHz, N-CDMA, 2.5 MHz @ 1.2288 MHz bandwidth. Peak/Average = 9.72 dB @ 0.01% probability
(CCDF). Channel spacing (bandwidth): 885 kHz (30 kHz), 1.25 MHz (12.5 kHz), 2.25 MHz (1 MHz).
Figure 5. N-CDMA ACPR, Power Gain, and Drain Efficiency vs. Power
25
30
35
40
45
50
15 20 25 30 35 40
P
IN
( dBm)Z
P
OUT
(dBm)Z
7
8
9
10
11
12
13
14
15
16
17
G
PS
(dB)Z
P1dB = 47. 37 dBm
( 54. 59 W)
P3dB = 48. 20 dBm
( 66. 03 W)
P
OUT
G
PS
0
5
10
15
20
25
30
35
40
45
50
25 30 35 40 45
POUT (dBm) AVERAGEZ
GPS (dB),
Ƨ
(%)Z
-75
-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
ADJACENT CHANNEL POWER (dBc)Z
GPS
885 kHz
2.25 MHz
Ƨ
1.25 MHz
AGR19045EF
45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Typical Performance Characteristics (continued)
Test Conditions:
VDD = 28 V, IDQ = 550 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz. 2 x N-CDMA, 2.5 MHz @ 1.2288 MHz bandwidth. Peak/average = 9.72 dB @
0.01% probability (CCDF). Channel spacing (bandwidth); ACPR: 885 kHz (30 kHz), IM3: 2.5 MHz (1.2288 MHz).
Figure 6. 2-Carrier N-CDMA ACPR, IM3, Power Gain, and Drain Efficiency vs. Power
Test Conditions:
VDD = 28 VDC, f1 = 1958.75 MHz, f2 = 1961.25 MHz, 2-carrier N-CDMA measurement.
Figure 7. 2-Carrier N-CDMA, GPS vs. POUT
0
5
10
15
20
25
30
35
40
45
50
55
60
30 35 40 45
P
OUT
( dBm) Z
G
PS
(dB),
Ƨ
(%)Z
-70
-60
-50
-40
-30
-20
-10
IM3 (dBc), ACPR (dBc)Z
ACP
G
PS
Ƨ
IM3
13.25
14.25
15.25
30 35 40 45
P
OUT
( dB m) Z
G
PS
(dB)Z
I
DQ
= 300 mA
I
DQ
= 600 mA
I
DQ
= 550 mA
I
DQ
= 500 mA
I
DQ
= 400 mA
I
DQ
= 700 mA
45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
AGR19045EF
Typical Performance Characteristics (continued)
Test Conditions:
VDD = 28 VDC,f1 = 1958.75 MHz, f2 = 1961.25 MHz, 2-carrier N-CDMA measurement.
Figure 8. ACPR vs. POUT
Test Conditions:
VDD = 28 VDC,f1 = 1958.75 MHz, f2 = 1961.25 MHz, 2-carrier N-CDMA measurement.
Figure 9. IM3 vs. POUT
-70
-65
-60
-55
-50
-45
-40
-35
30 35 40 45
P
OUT
(dB m)Z
ACPR (dBc)Z
I
DQ
= 300 mA
I
DQ
= 600 mA
I
DQ
= 400 mA
I
DQ
= 550 mA
I
DQ
= 700 mA
I
DQ
= 500 mA
-55
-50
-45
-40
-35
-30
-25
-20
30 35 40 45
P
OUT
(d B m) Z
IM3 (dBc)Z
I
DQ
= 300 mA
I
DQ
= 600 mA
I
DQ
= 550 mA
I
DQ
= 500 mA
I
DQ
= 400 mA
I
DQ
= 700 mA
AGR19045EF
45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Typical Performance Characteristics (continued)
Test Conditions:
VDD = 26 Vdc, IDQ = 400 mA, f = 1960 MHz, modulation = GSM/EDGE.
Figure 10. GSM/EDGE Power Gain, Drain Efficiency, Spectral Regrowth, and EVM Average vs. POUT
Test Conditions:
VDD = 28 Vdc, IDQ = 400 mA, f = 1960 MHz, modulation = GSM/EDGE.
Figure 11. GSM/EDGE Power Gain, Drain Efficiency, Spectral Regrowth, and EVM Average vs. POUT
0
5
10
15
20
25
30
35
40
45
50
55
0 5 10 15 20 25 30 35 40
P
OUT
(W) AVERAGEZ
G
PS
(dB),
Ƨ
(%), EVM (%)Z
-80
-75
-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
SPECTRAL REGROWTH (dBc)Z
EVM
G
PS
600 kHz
400 kHz
Ƨ
0
5
10
15
20
25
30
35
40
45
50
55
0 5 10 15 20 25 30 35 40
P
OUT
( W) AVERAGEZ
G
PS
(dB),
Ƨ
(%), EVM (%)Z
-80
-75
-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
SPECTRAL REGROWTH (dBc)Z
EVM
G
PS
600 k Hz
400 k Hz
Ƨ
45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
AGR19045EF
Package Dimensions
All dimensions are in inches. Tolerances are ±0.005 in. unless specified.
AGR19045EF
Label Notes:
■M before the part number denotes model program. X before the part number denotes engineering prototype.
■The last two letters of the part number denote wafer technology and package type.
■YYWWLL is the date code including place of manufacture: year year work week (YYWW), LL = location (AL = Allentown, PA; T = Thailand).
XXXXX = five-digit wafer lot number.
■ZZZZZZZ = seven-digit assembly lot number on production parts.
■ZZZZZZZZZZZZ = 12-digit (five-digit lot, two-digit wafer, and five-digit serial number) on models and engineering prototypes.
AGR21045F
YYWWLL
ZZZZZZZ
1
2
3
1
3
2
PINS:
1. DRAIN
2. GATE
3. SOURCE
PEAK DEVICES
AGR19045XF
YYWWLL XXXXX
ZZZZZZZ
