CPV364M4FPbF
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IGBT SIP Module
(Fast IGBT)
FEATURES
• Fully isolated printed circuit board mount
package
• Switching-loss rating includes all “tail” losses
•HEXFRED
® soft ultrafast diodes
• Optimized for medium speed, see fig. 1 for current vs.
frequency curve
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The IGBT technology is the key to Vishay’s Semiconductors
advanced line of IMS (Insulated Metal Substrate) power
modules. These modules are more efficient than
comparable bipolar transistor modules, while at the same
time having the simpler gate-drive requirements of the
familiar power MOSFET. This superior technology has now
been coupled to a state of the art materials system that
maximizes power throughput with low thermal resistance.
This package is highly suited to motor drive applications and
where space is at a premium.
Notes
(1) Repetitive rating; VGE = 20 V, pulse width limited by maximum junction temperature (see fig. 20)
(2) VCC = 80 % (VCES), VGE = 20 V, L = 10 μH, RG = 10 (see fig. 19)
PRODUCT SUMMARY
OUTPUT CURRENT IN A TYPICAL 5.0 kHz MOTOR DRIVE
VCES 600 V
IRMS per phase (4.6 kW total)
with TC = 90 °C 18 ARMS
TJ125 °C
Supply voltage 360 VDC
Power factor 0.8
Modulation depth (see fig. 1) 115 %
VCE(on) (typical)
at IC = 15 A, 25 °C 1.35 V
Speed 1 kHz to 8 kHz
Package SIP
Circuit Three phase inverter
IMS-2
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter voltage VCES 600 V
Continuous collector current, each IGBT IC
TC = 25 °C 27
A
TC = 100 °C 15
Pulsed collector current ICM (1) 80
Clamped inductive load current ILM (2) 80
Diode continuous forward current IFTC = 100 °C 9.3
Diode maximum forward current IFM 80
Gate to emitter voltage VGE ± 20 V
Isolation voltage VISOL Any terminal to case, t = 1 min 2500 VRMS
Maximum power dissipation, each IGBT PD
TC = 25 °C 63
W
TC = 100 °C 25
Operating junction and storage
temperature range TJ, TStg -40 to +150
°C
Soldering temperature For 10 s, (0.063" (1.6 mm) from case) 300
Mounting torque 6-32 or M3 screw 5 to 7
(0.55 to 0.8)
lbf · in
(N · m)
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Notes
(1) Pulse width 80 μs, duty factor 0.1 %
(2) Pulse width 5.0 μs; single shot
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TYP. MAX. UNITS
Junction to case, each IGBT, one IGBT in conduction RthJC (IGBT) - 2.0
°C/WJunction to case, each DIODE, one DIODE in conduction RthJC (DIODE) - 3.0
Case to sink, flat, greased surface RthCS (MODULE) 0.10 -
Weight of module
20 - g
0.7 - oz.
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown
voltage V(BR)CES (1) VGE = 0 V, IC = 250 μA 600 - - V
Temperature coefficient of
breakdown voltage V(BR)CESTJVGE = 0 V, IC = 1.0 mA - 0.69 - V/°C
Collector to emitter saturation voltage VCE(on)
IC = 15 A
VGE = 15 V
See fig. 2, 5
- 1.35 1.5
V
IC = 27 A - 1.60 -
IC = 15 A, TJ = 150 °C - 1.35 -
Gate threshold voltage VGE(th)
VCE = VGE, IC = 250 μA
3.0 - 6.0
Temperature coefficient of
threshold voltage VGE(th)/TJ-- 12-mV/°C
Forward transconductance gfe (2) VCE = 100 V, IC = 27 A 9.2 12 - S
Zero gate voltage collector current ICES
VGE = 0 V, VCE = 600 V - - 250
μA
VGE = 0 V, VCE = 600 V, TJ = 150 °C - - 2500
Diode forward voltage drop VFM
IC = 15 A
See fig. 13
-1.31.7
V
IC = 15 A, TJ = 150 °C - 1.2 1.6
Gate to emitter leakage current IGES VGE = ± 20 V - - ± 100 nA
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SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Total gate charge (turn-on) QgIC = 15 A
VCC = 400 V
VGE = 15 V
See fig. 8
- 100 160
nCGate to emitter charge (turn-on) Qge -1523
Gate to collector charge (turn-on) Qgc -3756
Turn-on delay time td(on)
TJ = 25 °C
IC = 15 A, VCC = 480 V
VGE = 15 V, RG = 10 
Energy losses include “tail” and diode
reverse recovery
See fig. 9, 10, 11, 18
-42-
ns
Rise time tr-18-
Turn-off delay time td(off) - 220 330
Fall time tf- 160 240
Turn-on switching loss Eon -0.46-
mJTurn-off switching loss Eoff -0.86-
Total switching loss Ets - 1.32 1.8
Turn-on delay time td(on)
TJ = 150 °C
IC = 15 A, VCC = 480 V
VGE = 15 V, RG = 10 
Energy losses include “tail” and
diode reverse recovery
See fig. 9, 10, 11, 18
-39-
ns
Rise time tr-19-
Turn-off delay time td(off) - 410 -
Fall time tf- 290 -
Total switching loss Ets -2.5-mJ
Input capacitance Cies VGE = 0 V
VCC = 30 V
ƒ = 1.0 MHz
See fig. 7
- 2200 -
pFOutput capacitance Coes - 140 -
Reverse transfer capacitance Cres -29-
Diode reverse recovery time trr
TJ = 25 °C
See fig. 14
IF = 15 A
VR = 200 V
dI/dt = 200 A/μs
-4260
ns
TJ = 125 °C - 74 120
Diode peak reverse recovery charge Irr
TJ = 25 °C
See fig. 15
-4.06.0
A
TJ = 125 °C - 6.5 10
Diode reverse recovery charge Qrr
TJ = 25 °C
See fig. 16
- 80 180
nC
TJ = 125 °C - 220 600
Diode peak rate of fall of recovery
during tbdI(rec)M/dt
TJ = 25 °C
See fig. 17
- 188 -
A/μs
TJ = 125 °C - 160 -
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Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of Fundamental)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Maximum Collector Current vs. Case Temperature
Fig. 5 - Typical Collector to Emitter Voltage vs.
Junction Temperature
0.1 1 10 100
0
5
10
15
20
25
f, Frequency (KHz)
LOAD CURRENT (A)
Tc = 90°C
Tj = 125°C
Power Factor = 0.8
Modulation Depth = 1.15
Vcc = 50% of Rated Voltage
0.00
1.47
2.94
4.40
Total Output Power (kW)
5.87
7.34
1
10
100
011
CE
C
I , Collector-to-Emitter Current (A)
V , Collector-to-Emitter Voltage (V)
T = 150°C
T = 25°C
J
J
V = 15V
20µs PULSE WIDTH
GE
1
10
100
5678910
C
I , Collector-to-Emitter Current (A)
GE
T = 25°C
T = 150°C
J
J
V , Gate-to-Emitter Voltage (V)
V = 50V
5µs PULSE WIDTH
CC
25 50 75 100 125 150
0
5
10
15
20
25
30
T , Case Temperature ( C)
Maximum DC Collector Current(A)
C°
-60 -40 -20 020 40 60 80 100 120 140 160
1.0
2.0
3.0
T , Junction Temperature ( C)
V , Collector-to-Emitter Voltage(V)
J°
CE
V = 15V
80 us PULSE WIDTH
GE
I = A7.5
C
I = A15
C
I = A30
C
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Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction to Case
Fig. 7 - Typical Capacitance vs. Collector to Emitter Voltage
Fig. 8 - Typical Gate Charge vs. Gate to Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate Resistance
Fig. 10 - Typical Switching Losses vs. Junction Temperature
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10
t , Rectangular Pulse Duration (sec)
1
thJC
D = 0.50
0.01
0.02
0.05
0.10
0.20
SINGLE PULSE
(THERMAL RESPONSE)
Thermal Response (Z )
P
t
2
1
t
DM
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
12
JDM
thJC
C
0
1000
2000
3000
4000
001011
CE
V , Collector-to-Emitter Voltage (V)
C
ies
C
res
C
oes
VGE = 0V f = 1 MHz
Cies = Cge + Cgc + Cce SHORTED
Cres = Cce
Coes = Cce + Cgc
020 40 60 80 100 120
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Emitter Voltage (V)
G
GE
V= 400V
I = 15A
CC
C
010 20 30 40 50
1.30
1.35
1.40
1.45
R , Gate Resistance ( )
Total Switching Losses (mJ)
G
V = 480V
V = 15V
T = 25 C
I = 15A
CC
GE
J
C
°
Ω
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Fig. 11 - Typical Switching Losses vs.
Collector to Emitter Current
Fig. 12 - Turn-Off SOA
Fig. 13 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
0 5 10 15 20 25 30
0.0
1.0
2.0
3.0
4.0
5.0
6.0
I , Collector-to-emitter Current (A)
Total Switching Losses (mJ)
C
R = 10
T = 150 C
V = 480V
V = 15V
G
J
CC
GE
°
Ω
1
10
100
1000
1 10 100 1000
V = 20V
T = 125 C
GE
Jo
V , Collector-to-Emitter Voltage (V)
I , Collector-to-Emitter Current (A)
CE
C
SAFE OPERATING AREA
1
10
100
0.8 1.2 1.6 2.0 2.4
FM
F
Instantaneous Forward Current - I (A)
Forward Voltage Drop - V (V)
T = 150°C
T = 125°C
T = 25°C
J
J
J
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Fig. 14 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 15 - Typical Recovery Current vs. dIF/dt
Fig. 16 - Typical Stored Charge vs. dIF/dt
Fig. 17 - Typical dI(rec)M/dt vs dIF/dt
20
40
60
80
100
0001001
f
di /dt - (A/µs)
t - (ns)
rr
I = 30A
I = 15A
I = 5.0A
F
F
F
V = 200V
T = 125°C
T = 25°C
R
J
J
1
10
100
0001001
f
di /dt - (A/µs)
I - (A)
IRRM
I = 5.0A
I = 15A
I = 30A
F
F
F
V = 200V
T = 125°C
T = 25°C
R
J
J
0
200
400
600
800
0001001
f
di /dt - (A/µs)
RR
Q - (nC)
I = 30A
I = 15A
I = 5.0A
F
F
F
V = 200V
T = 125°C
T = 25°C
R
J
J
100
1000
0001001
f
di /dt - (A/µs)
di(rec)M/dt - (A/µs)
I = 5.0A
I = 15A
I = 30A
F
F
F
V = 200V
T = 125°C
T = 25°C
R
J
J
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Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr,
Irr, td(on), tr, td(off), tf
Fig. 18b - Test Waveforms for Circuit for Fig. 18a,
Defining Eoff, td(off), tf
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
Fig. 18e - Macro Waveforms for Figure 18a’s Test Circuit
Same type
device as
D.U.T.
D.U.T.
430 µF
80 %
of VCE
t1
Ic
Vce
t1 t2
90% Ic
10% Vce
td(off) tf
Ic
5% Ic
t1+5µS
Vce ic dt
90% Vge
+Vge
∫
Eoff =
∫
Vce ie dt
t2
t1
5% Vce
Ic
Ipk
Vcc 10% Ic
Vce
t1 t2
DUT VOLTAGE
AND CURRENT
GATE VOLTAGE D.U.T.
+Vg
10% +Vg
90% Ic
tr
td(on)
Eon =
DIODE REVERSE
RECOVERY ENERGY
tx
∫
Erec =
t4
t3
Vd id dt
t4
t3
DIODE RECOVERY
WAVEFORMS
Ic
Vpk
10% Vcc
Irr
10% Irr
Vcc
trr
∫
Qrr =
trr
tx
id dt
Vg GATE SIGNAL
DEVICE UNDER TES
CURRENT D.U.T.
VOLTAGE IN D.U.T.
CURRENT IN D1
t0 t1 t2
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Fig. 19 - Clamped Inductive Load Test Circuit Fig. 20 - Pulsed Collector Current Test Circuit
CIRCUIT CONFIGURATION
D.U.T.
50 V 6000 µF
100 V
1000 V
L
VC
0 - 480 V
RL = 480 V
4 x IC at 25 °C
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95066
3
618
15
41016
9
12
71319
Q1
Q2
Q3D1
D2
D3
D4
D5
D6Q4
Q5
Q6
1
Document Number: 95066 For technical questions, contact: indmodules@vishay.com www.vishay.com
Revision: 30-Jul-07 1
IMS-2 (SIP)
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters (inches)
Notes
(1) Tolerance uless otherwise specified ± 0.254 mm (0.010")
(2) Controlling dimension: inch
(3) Terminal numbers are shown for reference only
IMS-2 Package Outline (13 Pins)
7.87 (0.310)
5.46 (0.215)
1.27 (0.050)
6.10 (0.240)
3.05 ± 0.38
(0.120 ± 0.015)
0.51 (0.020)
0.38 (0.015)
62.43 (2.458)
53.85 (2.120)
Ø 3.91 (0.154)
2 x
21.97 (0.865)
3.94 (0.155)
4.06 ± 0.51
(0.160 ± 0.020)
5.08 (0.200)
6 x
1.27 (0.050)
13 x
2.54 (0.100)
6 x 0.76 (0.030)
13 x
1 3 4 6 7 9 10 12 13 15 16 18 19171411258
Legal Disclaimer Notice
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Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
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liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
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