For the most current data, consult MICROSEMI’s website: www.MICROSEMI.com
Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information.
GENERAL DESCRIPTION
The 2731GN-200M is an internally matched, COMMON SOURCE, class
AB GaN on SiC HEMT power transistor capable of providing 12dB gain,
200 Watts of pulsed RF output power at 200µs pulse width, 10% duty
factor across the 2700 to 3100 MHz band. The transistor has internal
pre-match for optimal performance. This hermetically sealed transistor is
designed for S-Band Radar applications. It utilizes gold metallization
and eutectic attach to provide highest reliability and superior
ruggedness.
CASE OUTLINE
55-QP
Common Source
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @ 25°C
400 W
Maximum Voltage and Current
Drain-Source Voltage (V
DSS
) 150 V
Gate-Source Voltage (V
GS
) -8 to +0 V
Maximum Temperatures
Storage Temperature (T
STG
) -55 to +125 °C
Operating Junction Temperature +200 °C
ELECTRICAL CHARACTERISTICS @ 25°
°°
°C
Symbol Characteristics Test Conditions Min Typ Max Units
Pout Output Power Pin=12W, Freq=2.7, 2.9, 3.1 GHz 200 225 W
Gp Power Gain Pin=12W, Freq=2.7, 2.9, 3.1 GHz 12.2 12.7 dB
d Drain Efficiency Pin=12W, Freq=2.7, 2.9, 3.1 GHz 42 50 %
R/L Input Return Loss Pin=12W, Freq=2.7, 2.9, 3.1 GHz -7 dB
VSWR-T Load Mismatch
Tolerance Pout=200W, Freq=2.7 GHz 5:1
Өjc Thermal Resistance Pulse Width=200uS, Duty=10% 0.6 °C/W
• Bias Condition: Vdd=+60V, Idq=500mA peak current (Vgs= -2.0 ~ -4.5V typical)
FUNCTIONAL CHARACTERISTICS @ 25°
°°
°C
I
D(Off)
Drain leakage current V
gS
= -8V, V
D
= 60V
5 mA
I
G(Off)
Gate leakage current V
gS
= -8V, V
D
= 0V 4 mA
BV
DSS
Drain-source breakdown
voltage V
gs
=-8V, I
D
= 5mA 250 V
Issue June 2011
2731GN – 200M
200 Watts - 60 Volts, 200 µs, 10%
2700 - 3100 MHz
For the most current data, consult MICROSEMI’s website: www.MICROSEMI.com
Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information.
TYPICAL PERFORMACE DATA
Frequency Pin (W) Pout (W) Id (A) RL (dB) Nd (%) G (dB)
2700 MHz 12 251 0.85 -13 49 13.2
2900 MHz 12 243 0.80 -8 51 13.0
3100 MHz 12 214 0.75 -10 47 12.5
GaN 2731GN-200M: Pin vs. Out & Gain
0
50
100
150
200
250
300
5.0 7.0 9.0 11.0 13.0
Pin (W)
Pout (W)
10
12
14
16
18
20
Gain (dB)
2.7GHz 2.9GHz 3.1GHz
GaN 2731GN-200M: Pin Vs. Efficiency
20%
30%
40%
50%
60%
70%
5.0 7.0 9.0 11.0 13.0
Pin (W)
Efficiency (%)
2.7GHz 2.9GHz 3.1GHz
2731GN – 200M
200 Watts - 60 Volts, 200 µs, 10%
2700 - 3100 MHz
For the most current data, consult MICROSEMI’s website: www.MICROSEMI.com
Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information.
TRANSISTOR IMPEDANCE INFORMATION
Impedance Data
Freq (GHz) Zs Zl
2.7 3.28 – j7.50 3.24 – j3.74
2.8 3.10 – j7.14 3.24 – j3.44
2.9 2.94 – j6.78 3.26 – j3.14
3.0 2.79 – j6.44 3.27 – j2.84
3.1 2.65 – j6.10 3.00 – j2.56
Note:
in
Z
is looking into the input circuit;
Load
Z
is looking into the output circuit.
2731GN – 200M
200 Watts - 60 Volts, 200 µs, 10%
2700 - 3100 MHz
For the most current data, consult MICROSEMI’s website: www.MICROSEMI.com
Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information.
TEST CIRCUIT LAYOUT
Board Material: Roger Duroid 6002 @ 20 mils thickness, 1 oz Cu, Er = 2.9
2731GN – 200M
200 Watts - 60 Volts, 200 µs, 10%
2700 - 3100 MHz
For the most current data, consult MICROSEMI’s website: www.MICROSEMI.com
Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information.
55-QP PACKAGE DIMENSION
Dimension Min (mil) Min (mm) Max (mil) Max (mm)
A 213 5.41 217 5.51
B 798 20.26 802 20.37
C 560 14.22 564 14.32
D 258 6.55 362 9.19
E 43 1.09 47 1.19
F 226 5.74 230 5.84
G 235 5.96 239 6.07
H 235 5.96 239 6.07
I 60 1.52 62 1.57
J 81 2.06 82 2.08
K 116 2.94 118 2.99
L 4 .102 6 .152
2731GN – 200M
200 Watts - 60 Volts, 200 µs, 10%
2700 - 3100 MHz
For the most current data, consult MICROSEMI’s website: www.MICROSEMI.com
Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information.
The information contained in the document is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be
copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of
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authorized personnel of Microsemi. No license under any patent, copyright, trade secret or other intellectual property right is
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or otherwise. Any license under such intellectual property rights must be approved by Microsemi in writing signed by an officer of
Microsemi.
Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any
notice. This product has been subject to limited testing and should not be used in conjunction with life-support or other mission-
critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi disclaims any express or implied
warranty, relating to sale and/or use of Microsemi products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright or other intellectual property right. The product is subject to other terms and
conditions which can be located on the Web at http://www.microsemi.com/legal/tnc.asp.
Revision History
Revision Level / Date
Para. Affected Description
0.1 / 6 August 2012 - Initial Preliminary Release
2731GN – 200M
200 Watts - 60 Volts, 200 µs, 10%
2700 - 3100 MHz
