2731GN - 200M 200 Watts - 60 Volts, 200 s, 10% 2700 - 3100 MHz GENERAL DESCRIPTION CASE OUTLINE 55-QP Common Source The 2731GN-200M is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT power transistor capable of providing 12dB gain, 200 Watts of pulsed RF output power at 200s pulse width, 10% duty factor across the 2700 to 3100 MHz band. The transistor has internal pre-match for optimal performance. This hermetically sealed transistor is designed for S-Band Radar applications. It utilizes gold metallization and eutectic attach to provide highest reliability and superior ruggedness. ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation 400 W Device Dissipation @ 25C Maximum Voltage and Current Drain-Source Voltage (VDSS) 150 V Gate-Source Voltage (VGS) -8 to +0 V Maximum Temperatures Storage Temperature (TSTG) -55 to +125 C Operating Junction Temperature +200 C ELECTRICAL CHARACTERISTICS @ 25C Symbol Pout Gp d R/L VSWR-T jc * Characteristics Output Power Power Gain Drain Efficiency Input Return Loss Load Mismatch Tolerance Thermal Resistance Test Conditions Pin=12W, Freq=2.7, 2.9, 3.1 GHz Pin=12W, Freq=2.7, 2.9, 3.1 GHz Pin=12W, Freq=2.7, 2.9, 3.1 GHz Pin=12W, Freq=2.7, 2.9, 3.1 GHz Pout=200W, Freq=2.7 GHz Min 200 12.2 42 -7 Typ 225 12.7 50 Max Units W dB % dB 5:1 Pulse Width=200uS, Duty=10% 0.6 C/W Bias Condition: Vdd=+60V, Idq=500mA peak current (Vgs= -2.0 ~ -4.5V typical) FUNCTIONAL CHARACTERISTICS @ 25C ID(Off) IG(Off) BVDSS Drain leakage current Gate leakage current Drain-source breakdown voltage VgS = -8V, VD = 60V VgS = -8V, VD = 0V Vgs =-8V, ID = 5mA 5 4 250 mA mA V Issue June 2011 For the most current data, consult MICROSEMI's website: www.MICROSEMI.com Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information. 2731GN - 200M 200 Watts - 60 Volts, 200 s, 10% 2700 - 3100 MHz TYPICAL PERFORMACE DATA Frequency Pin (W) Pout (W) Id (A) RL (dB) Nd (%) G (dB) 2700 MHz 12 251 0.85 -13 49 13.2 2900 MHz 12 243 0.80 -8 51 13.0 3100 MHz 12 214 0.75 -10 47 12.5 GaN 2731GN-200M: Pin vs. Out & Gain 300 20 18 200 16 150 14 100 50 12 0 10 5.0 7.0 9.0 Pin (W) 11.0 Gain (dB) Pout (W) 250 13.0 2.7GHz 2.9GHz 3.1GHz GaN 2731GN-200M: Pin Vs. Efficiency 70% Efficiency (%) 60% 50% 40% 30% 20% 5.0 7.0 9.0 Pin (W) 11.0 2.7GHz 13.0 2.9GHz 3.1GHz For the most current data, consult MICROSEMI's website: www.MICROSEMI.com Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information. 2731GN - 200M 200 Watts - 60 Volts, 200 s, 10% 2700 - 3100 MHz TRANSISTOR IMPEDANCE INFORMATION Freq (GHz) 2.7 2.8 2.9 3.0 3.1 Impedance Data Zs 3.28 - j7.50 3.10 - j7.14 2.94 - j6.78 2.79 - j6.44 2.65 - j6.10 Zl 3.24 - j3.74 3.24 - j3.44 3.26 - j3.14 3.27 - j2.84 3.00 - j2.56 Note: Z in is looking into the input circuit; Z Load is looking into the output circuit. For the most current data, consult MICROSEMI's website: www.MICROSEMI.com Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information. 2731GN - 200M 200 Watts - 60 Volts, 200 s, 10% 2700 - 3100 MHz TEST CIRCUIT LAYOUT Board Material: Roger Duroid 6002 @ 20 mils thickness, 1 oz Cu, Er = 2.9 For the most current data, consult MICROSEMI's website: www.MICROSEMI.com Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information. 2731GN - 200M 200 Watts - 60 Volts, 200 s, 10% 2700 - 3100 MHz 55-QP PACKAGE DIMENSION Dimension A B C D E F G H I J K L Min (mil) 213 798 560 258 43 226 235 235 60 81 116 4 Min (mm) 5.41 20.26 14.22 6.55 1.09 5.74 5.96 5.96 1.52 2.06 2.94 .102 Max (mil) 217 802 564 362 47 230 239 239 62 82 118 6 Max (mm) 5.51 20.37 14.32 9.19 1.19 5.84 6.07 6.07 1.57 2.08 2.99 .152 For the most current data, consult MICROSEMI's website: www.MICROSEMI.com Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information. 2731GN - 200M 200 Watts - 60 Volts, 200 s, 10% 2700 - 3100 MHz The information contained in the document is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi If the recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such Agreement will also apply . This document and the information contained herein may not be modified, by any person other than authorized personnel of Microsemi. No license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication, inducement, estoppels or otherwise. Any license under such intellectual property rights must be approved by Microsemi in writing signed by an officer of Microsemi. Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice. This product has been subject to limited testing and should not be used in conjunction with life-support or other missioncritical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. The product is subject to other terms and conditions which can be located on the Web at http://www.microsemi.com/legal/tnc.asp. Revision History Revision Level / Date 0.1 / 6 August 2012 Para. Affected - Description Initial Preliminary Release For the most current data, consult MICROSEMI's website: www.MICROSEMI.com Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information.