DATA SH EET
Product specification
Supersedes data of 1997 Feb 19 1998 Apr 01
INTEGRATED CIRCUITS
TDA8541
1 W BTL audio amplifier
1998 Apr 01 2
NXP Semiconductors Product specification
1 W BTL audio amplifier TDA8541
FEATURES
Flexibility in use
Few external components
Low saturation voltage of output stage
Gain can be fixed with external resistors
Standby mode controlled by CMOS compatible levels
Low standby current
No switch-on/switch-off plops
High supply voltage ripple rejection
Protected against electrostatic discharge
Outputs short-circuit safe to ground, VCC and across the
load
Thermally protected.
GENERAL DESCRIPTION
The TDA8541( T) is a one channel audio powe r amplifier
for an output power of 1 W with an 8 Ω load at a 5 V
supply. The circuit contains a BTL amplifier with a
complementary PNP-NPN output stage and standby/mute
logic. The TDA85 41 T co mes in an 8 pin SO package and
the TDA8541 in an 8 pin DIP pack age.
APPLICATIONS
Portable consumer prod ucts
Personal computers
Telephony.
QUICK REFERENCE DATA
ORDERING INFORMATION
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCC supply voltage 2.2 5 18 V
Iqquiescent current VCC =5V 812mA
Istb standby current −−10 μA
Pooutput power THD = 10%; RL=8Ω; VCC =5V 1 1.2 W
THD total harmonic distortion Po=0.5W 0.15 %
SVRR supply voltage ripple rejection 50 −−dB
TYPE
NUMBER PACKAGE
NAME DESCRIPTION VERSION
TDA8541T SO8 plastic small outline package; 8 leads; body width 3.9 mm SOT96-1
TDA8541 DIP8 plastic dual in-line package; 8 leads (300 mil) SOT97-1
1998 Apr 01 3
NXP Semiconductors Product specification
1 W BTL audio amplifier TDA8541
BLOCK DIAGRAM PINNING
Fig.1 Block diagram.
handbook, halfpage
MGB972
4
STANDBY/MUTE LOGIC
3
6
2
1
7
8
5
R
R
20 kΩ
20 kΩ
IN
IN+
VCC
SVR
MODE
OUT
OUT+
GND
+
+
TDA8541
SYMBOL PIN DESCRIPTION
MODE 1 operating mod e select (sta ndby,
mute, operating )
SVR 2 half supply voltage, decoupling
ripple rejection
IN+ 3 positive input
IN4 negative input
OUT5 negative loudspeaker terminal
VCC 6 supply voltage
GND 7 ground
OUT+ 8 positive loudspeaker terminal
Fig.2 Pin configuration.
handbook, halfpage 1
2
3
4
8
7
6
5
MGB971
TDA8541
OUT+
GNDSVR
VCC
OUT
IN
IN+
MODE
FUNCTIONAL DESCRIPTION
The TDA8541(T) is a BTL audio power amplifier capable
of delivering 1 W output power to an 8 Ω load at
THD = 10% using a 5 V power supply. Using the MODE
pin the device can be switched to standby and mute
condition. The device is protected by an internal thermal
shutdown protec tion mechanism. The gain can b e se t
within a range from 6 dB to 30 dB by external feedback
resistors.
Power amplifier
The power amplifier is a Bridge Tied Load (BTL) amplifier
with a complementary PNP-NPN output stage.
The voltage loss on the positive supply line is the
saturation voltage of a PNP power transistor , on the
negative side the saturation voltage of an NPN power
transistor. The total voltage loss is <1 V and with a 5 V
supply voltage and an 8 Ω loudspeaker an output power of
1 W can be delivered.
Mode select pin
The device is in standb y mode (with a very low curren t
consumption) if the voltage at the MODE pin is
>(VCC 0.5 V), or if this pin is floating. At a MODE voltage
level of less than 0.5 V the amplifier is fully operational.
In the range betw een 1.5 V and VCC 1.5 V the amplifier
is in mute condition. The mute condition is useful to
suppress plop noise at the ou tput, caused by charging of
the input capacitor.
1998 Apr 01 4
NXP Semiconductors Product specification
1 W BTL audio amplifier TDA8541
LIMITING VALUES
In accordance with th e Absolute Ma ximum Ratin g System (IEC 1 34).
QUALITY SPECIFICATION
In accordance with “SNW-FQ-611-E”. The number of the quality specification can be found in the “Quality Reference
Handbook”. T he handbook ca n be ordered using the code 9397 750 00192.
THERMAL CHARACTE RISTICS
DC CHARACTERISTICS
VCC =5V; T
amb =25°C; RL=8Ω; VMODE = 0 V; measured in test circuit Fig.3; unless otherwise specified.
Notes
1. With a load connected at the outputs the quiescent current will increase, the maximum of this increase being equal
to the DC output offset voltage divided by RL.
2. The DC output vo ltage with respect to ground is approximate l y 0.5 ×VCC.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCC supply voltage operating 0.3 +18 V
VIinput voltage 0.3 VCC +0.3 V
IORM repetitive peak output current 1A
Tstg storage temperature non-operating 55 +150 °C
Tamb operating ambient temperature 40 +85 °C
Vpsc AC and DC short-circuit safe voltage 10 V
Ptot total power dissipation SO8 0.8 W
DIP8 1.2 W
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient in free air
TDA8541T (SO8) 160 K/W
TDA8541 (DIP8) 100 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCC supply voltage operating 2.2 5 18 V
Iqquiescent current RL=; note 1 812mA
Istb stan dby current VMODE =V
CC −−10 μA
VODC output voltage note 2 2.2 V
VOUT+ VOUTdifferential output voltage offset −−50 mV
IIN+, IINinput bias current −−500 nA
VMODE input voltage mode select operating 0 0.5 V
mute 1.5 VCC 1.5 V
standby VCC 0.5 VCC V
IMODE input current mode select 0 < VMODE <V
CC −−20 μA
1998 Apr 01 5
NXP Semiconductors Product specification
1 W BTL audio amplifier TDA8541
AC CHARACTERISTICS
VCC =5V; T
amb =25°C; RL=8Ω; f = 1 kHz; V MODE = 0 V; measured in test circuit Fig.3; unle ss otherwise specified.
Notes
1. Gain of the amplifier is 2 ×R2/R1 in test circuit of Fig.3.
2. The noise output voltage is measured at the output in a frequency range from 20 Hz to 20 kHz (unweighted), with a
source impedance of RS=0Ω at the input.
3. Supply voltage ripp le rejection is measured at th e output, with a source impedance of RS=0Ω at the input.
The ripple voltage is a sine wave with a frequency of 1 kHz and an amplitude of 100 mV (RMS), which is applied to
the positive supply rail.
4. Supply voltage ripp le rejection is measured at th e output, with a source impedance of RS=0Ω at the input.
The ripple vo ltage is a sine wave with a f requency betw een 100 Hz and 20 kHz and an amplitude of 100 mV (RMS),
which is applied to the positive supply rail.
5. Output voltage in mute position is measured with an input voltage of 1 V (RMS) in a bandwidth of 20 kHz, so including
noise.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Pooutput power THD = 10% 1 1.2 W
THD = 0.5% 0.6 0.9 W
THD total harmonic distortion Po=0.5W 0.15 0.3 %
Gvclosed loop voltage ga in note 1 6 30 dB
Zidifferential input impedance 100 kΩ
Vno noise output voltage note 2 −−100 μV
SVRR supply voltage ripple rejection note 3 50 −−dB
note 4 40 −−dB
Vooutput voltage in mute condition note 5 −−200 μV
1998 Apr 01 6
NXP Semiconductors Product specification
1 W BTL audio amplifier TDA8541
TEST AND APPLICATION INFORMATION
Test conditions
Because the application can be either Bridge-Tied Load
(BTL) or Single-Ended (SE), the curves of each application
are shown separately.
The thermal resistance = 100 K/W for the DIP8 envelope;
the maximum sine wave power dissipation for
Tamb =25°C is:
.
For Tamb =60°C the maximum total power dissipat ion is:
.
BTL application
Tamb =25°C if not specially mentioned, VCC =5V,
f=1kHz, R
L=8Ω, Gv= 20 dB, audio band-pass
22 Hz to 22 kHz.
The BTL application diagram is shown in Fig.3.
The quiescent cur rent has been measured without an y
load impedance. The total harmonic distortion as a
function of frequency was measured with a low-pass filter
of 80 kHz . The value of capacitor C2 influences the
behaviour of the SVRR at low frequencies, increasing the
value of C2 increase s t he performance of the SVRR .
The figure of the mode selec t voltag e (Vms) as a functio n
of the supply voltage shows three areas; op er ating, mute
and standby. It shows, that the DC-switching levels of the
mute and standby res pectively depends on the supply
voltage level.
150 25
100
---------------------- 1.25 W=
150 60
100
---------------------- 0.9 W=
SE application
Tamb =25°C if not specially mentioned, VCC =7.5V,
f=1kHz, R
L=4Ω, Gv= 20 dB, audio band-pass
22 Hz to 22 kHz.
The SE application diagram is show n in Fig.13.
The capacitor value of C3 in combination with the load
impedance deter mines the low frequency behaviour.
The total harmonic distortion as a function of frequency
was measured with low-pass filter of 80 kHz. The value of
capacitor C2 influences the behaviour of the SVRR at low
frequencies, increasing the value of C2 increases the
performance of the SVRR.
General remark
The frequency characteristic can be adapted by
connecting a sma ll capacitor across the feedback resistor.
To improve the immunity of HF radiation in radio circuit
applications, a small capacitor can be connected in parallel
with the feedback resistor (56 kΩ); this creat es a low-pass
filter.
1998 Apr 01 7
NXP Semiconductors Product specification
1 W BTL audio amplifier TDA8541
BTL APPLICATION
Fig.3 BTL application.
handbook, full pagewidth
MBH881
4
VCC
Vin
OUT
IN
IN+
OUT+
5
100 nF 100 μF
6
7
TDA8541
3
GND
RL
SVR 2
1
MODE 8
C2
47 μF
1 μF
C1 R1
R2
11 kΩ
56 kΩ
Gain 2 R2
R1
--------
×=
Fig.4 Iq as a function of VCC.
RL=.
handbook, halfpage
0
Iq
(mA)
VCC (V)
15
10
5
0420
81216
MGD876
Fig.5 THD as a function o f Po.
handbook, halfpage
10
1
THD
(%)
101
102
MGD877
1021011Po (W) 10
(1) (2)
f=1kHz, G
v=20dB.
(1) VCC =5V, R
L=8Ω.
(2) VCC =9V, R
L=16Ω.
1998 Apr 01 8
NXP Semiconductors Product specification
1 W BTL audio amplifier TDA8541
Fig.6 THD as a function of frequency.
handbook, halfpage
10
1
10
1
10
2
MGD878
10 10
2
10
3
10
4
THD
(%)
f (Hz) 10
5
(1) (2)
Po=0.5W, G
v=20dB.
(1) VCC =5V, R
L=8Ω.
(2) VCC =9V, R
L=16Ω.
Fig.7 SVRR as a function of frequency.
handbook, halfpage
80
60
40
20 MGD879
10 10
2
10
3
SVRR
(dB)
f (Hz)
10
4
10
5
(1)
(2)
(3)
VCC =5V, 8Ω, Rs=0Ω, Vi= 100 mV.
(1) Gv=30dB.
(2) Gv=20dB.
(3) Gv=6dB.
Fig.8 Po as a function of VCC.
THD = 10%.
(1) RL=8Ω.
(2) RL=16Ω.
handbook, halfpage
0
(1) (2)
48
Po
(W)
VCC (V) 12
2.5
0
2
1.5
1
0.5
MGD880
Fig.9 Worst case power dissipation as a function
of VCC.
handbook, halfpage
0
(1) (2)
4
P
(W)
VCC (V)
812
2
1.5
0.5
0
1
MGD881
(1) RL=8Ω.
(2) RL=16Ω.
1998 Apr 01 9
NXP Semiconductors Product specification
1 W BTL audio amplifier TDA8541
Fig.10 P as a function of Po.
Sine wave of 1 kHz.
(1) VCC =9V, R
L=16Ω.
(2) VCC =5V, R
L=8Ω.
handbook, halfpage
0 0.5 2.5
1.6
1.2
0.4
0
0.8
1 1.5 2
P
(W)
Po (W)
MGD882
(1)
(2)
Fig.11 Vo as a function of Vms.
Band-pass = 22 Hz to 22 kHz.
(1) VCC =3V.
(2) VCC =5V.
(3) VCC =12V.
handbook, halfpage
10
1
101
102
103
105
104
106
MGD883
1011
Vo
(V)
Vms (V)
10 102
(1) (2) (3)
Fig.12 Vms as a function of VP.
handbook, halfpage
048
Vms
(V)
16
16
12
4
0
8
12 V
P
(V)
MGL070
operating
mute
standby
1998 Apr 01 10
NXP Semiconductors Product specification
1 W BTL audio amplifier TDA8541
SE APPLICATION
Fig.13 SE application.
handbook, full pagewidth
MBH882
4
VCC
Vin
OUT
IN
IN+
OUT+
5
100 nF 100 μF
470 μF
C3
6
7
TDA8541
3
GND
RL
SVR 2
1
MODE 8
C2
47 μF
1 μF
C1 R1
R2
11 kΩ
110 kΩ
Gain R2
R1
--------
=
Fig.14 THD as a function of Po.
handbook, halfpage
10
1
THD
(%)
10
2
10
1
MGD884
10
2
10
1
1Po (W) 10
(1)
(3)
(2)
f=1kHz, G
v=20dB.
(1) VCC =7.5V, R
L=4Ω.
(2) VCC =9V, R
L=8Ω.
(3) VCC =12V, R
L=16Ω.
Fig.15 THD as a function of frequency.
Po=0.5W, G
v=20dB.
(1) VCC =7.5V, R
L=4Ω.
(2) VCC =9V, R
L=8Ω.
(3) VCC =12V, R
L=16Ω.
handbook, halfpage
10
1
THD
(%)
f (Hz)
101
102
MGD885
10 102103104105
(1)
(2)
(3)
1998 Apr 01 11
NXP Semiconductors Product specification
1 W BTL audio amplifier TDA8541
Fig.16 SVRR as a function of frequency .
VCC =7.5V, R
L=4Ω, Rs=0Ω, Vi= 100mV.
(1) Gv=24dB.
(2) Gv=20dB.
(3) Gv=0dB.
handbook, halfpage
80
60
40
20 MGD886
10 10
2
10
3
SVRR
(dB)
f (Hz)
10
4
10
5
(1)
(3)
(2)
Fig.17 Po as a function of VCC.
(1) THD = 10%, RL=4Ω.
(2) THD = 10%, RL=8Ω.
(3) THD = 10%, RL=16Ω.
handbook, halfpage
04
(1) (2) (3)
8
Po
(W)
VCC (V) 16
2
0
1.6
12
1.2
0.8
0.4
MGD887
Fig.18 Worst case power dissipation as a function
of VCC.
(1) RL=4Ω.
(2) RL=8Ω.
(3) RL=16Ω.
handbook, halfpage
04
P
(W)
VCC (V)
816
1.6
1.2
(1) (2) (3)
0.4
0
0.8
12
MGD888
Fig.19 Power diss ipation as a function of Po.
(1) VCC =7.5V, R
L=4Ω.
(2) VCC =12V, R
L=16Ω.
(3) VCC =9V, R
L=8Ω.
handbook, halfpage
0
(1)
(3)
(2)
1.2
0.8
0.4
00.4 0.8 1.6
1.2
P
(W)
Po (W)
MGD889
1998 Apr 01 12
NXP Semiconductors Product specification
1 W BTL audio amplifier TDA8541
handbook, full pagewidth
MBH920
MS
IN OUT+
+VP
OUT
100 μF
100 nF
56 kΩ
11 kΩ
6.8 kΩ
1
4
8
5
6.8 kΩ
47 μF
1 μFTDA8541
Fig.20 Printed-circuit board layout (BTL and SE).
a. Top view.
b. Component side.
1998 Apr 01 13
NXP Semiconductors Product specification
1 W BTL audio amplifier TDA8541
PACKAGE OUTLINES
UNIT A
max. A1A2A3bpcD
(1) E(2) (1)
eH
ELL
pQZywv θ
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm
inches
1.75 0.25
0.10 1.45
1.25 0.25 0.49
0.36 0.25
0.19 5.0
4.8 4.0
3.8 1.27 6.2
5.8 1.05 0.7
0.6 0.7
0.3 8
0
o
o
0.25 0.10.25
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
Notes
1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included.
1.0
0.4
SOT96-1
X
wM
θ
A
A1
A2
bp
D
HE
Lp
Q
detail X
E
Z
e
c
L
vMA
(A )
3
A
4
5
pin 1 index
1
8
y
076E03 MS-012
0.069 0.010
0.004 0.057
0.049 0.01 0.019
0.014 0.0100
0.0075 0.20
0.19 0.16
0.15 0.05 0.244
0.228 0.028
0.024 0.028
0.012
0.010.010.041 0.004
0.039
0.016
0 2.5 5 mm
scale
S
O8: plastic small outline package; 8 leads; body width 3.9 mm SOT96
-1
99-12-27
03-02-18
1998 Apr 01 14
NXP Semiconductors Product specification
1 W BTL audio amplifier TDA8541
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
SOT97-1 99-12-27
03-02-13
UNIT A
max. 12 b1(1) (1) (1)
b2cD E e M Z
H
L
mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
A
min. A
max. bmax.
w
ME
e1
1.73
1.14 0.53
0.38 0.36
0.23 9.8
9.2 6.48
6.20 3.60
3.05 0.2542.54 7.62 8.25
7.80 10.0
8.3 1.154.2 0.51 3.2
inches 0.068
0.045 0.021
0.015 0.014
0.009
1.07
0.89
0.042
0.035 0.39
0.36 0.26
0.24 0.14
0.12 0.010.1 0.3 0.32
0.31 0.39
0.33 0.0450.17 0.02 0.13
b2
050G01 MO-001 SC-504-8
MH
c
(e )
1
ME
A
L
seating plane
A1
wM
b1
e
D
A2
Z
8
1
5
4
b
E
0 5 10 mm
scale
Note
1. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included.
pin 1 index
D
IP8: plastic dual in-line package; 8 leads (300 mil) SOT97
-1
1998 Apr 01 15
NXP Semiconductors Product specification
1 W BTL audio amplifier TDA8541
SOLDERING
Introduction
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
This text gives a very brief insight to a complex technology.
A more in-depth acco un t of sold er ing ICs can be found in
our “IC Package Databook” (order code 93 98 652 90011).
DIP
SOLDERING BY DIPPING OR BY WAVE
The maximum permissible temperatur e of the s old er is
260 °C; solder at this temperature must not be in contact
with the joint for more than 5 seconds. The total contact
time of successive solder waves must not exceed
5 seconds.
The device may be mounted up to the seating plane, but
the temperature of the plastic bod y mus t not ex ceed the
specified maximum storage temperature (Tstg max). If the
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature with in the permissible limit.
REPAIRING SOLDERED JOINTS
Apply a low voltage soldering iron (less than 24 V) to the
lead(s) of the package, below the seating plane or not
more than 2 mm above it. If the temperature of the
soldering iron bit is less than 300 °C it may remain in
contact for up to 10 seconds . If the bit temper ature is
between 300 and 400 °C, contact may be up to 5 seconds.
SO
REFLOW SOLDERING
Reflow soldering techniques are suitable for all SO
packages.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-s yringe dispensing before package placement.
Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heat ing
method. Typical reflow temperature s range from
215to250°C.
Preheating is necessary to dry the paste and evap orate
the binding agent. Preheating dura tio n: 45 minutes at
45 °C.
WAVE SOLDERING
Wave soldering techniques can be used for all SO
packages if the following conditions are observed:
A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave) soldering
techniqu e sh ould be used.
The longitudinal ax is of the package footprint must be
parallel to the solder flow.
The package footprint must incorporate solder thieves at
the downstream end.
During placement and before soldering, the package must
be fixed with a droplet of adh esive. The adhesive c an be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Maximum permissible solder temp erature is 260 °C, and
maximum duration of pack age immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 sec onds. Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
REPAIRING SOLDERED JOINTS
Fix the component by first so ldering two diagonally -
opposite end leads. Use only a low voltage solder in g iron
(less than 24 V) applied to the flat part of the lead. C ontact
time must be limit ed to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operatio n wi th in 2 to 5 seconds between
270 and 320 °C.
1998 Apr 01 16
NXP Semiconductors Product specification
1 W BTL audio amplifier TDA8541
DATA SHEET STATUS
Notes
1. Please consult the most rec en tly issued document before initiating or completing a design.
2. The product s tatus of device(s) described in this document may ha ve changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for product
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the pr oduct specification.
DISCLAIMERS
Limited warranty and liability Information in this
document is believed to be accurate and re liable.
However, NXP Semiconduc tors does not give any
representations or warranties, expressed or implied, as to
the accuracy or completeness of such information and
shall have no liability for the consequences of use of such
information.
In no event shall NXP Semiconductors be liable for any
indirect, incidental, punitive, special or cons equential
damages (including - without limitation - lost profits, lost
savings, busin es s interru ption, costs related to the
removal or replacement of any products or rework
charges) whether or not such damages are based on tort
(including negligence), warranty, breach of contract or any
other legal theory.
Notwithstanding any damages that customer might incur
for any reason whatsoever, NXP Semiconductors
aggregate and cu mulative liability towa rds customer for
the products described herein shall be limited in
accordance with the Terms and conditions of comme rcial
sale of NXP Semiconductors.
Right to make changes NXP Semiconductors
reserves the right to make changes to information
published in this doc ument, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
Suitability for use NXP Semiconduct ors pr oduc ts are
not designed, au thorized or warranted to be suitable for
use in life support, life-critical or safety-critical systems or
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reas onably be
expected to result in pe rs onal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductor s pr oducts in such equi pme nt or
application s and therefor e such inclusion and / o r use is at
the customer’s own risk.
Applications Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of
their applications and products using NXP
Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or
customer product design. It is customer’s sole
responsibility to determine whether the NXP
Semiconductors pro du ct is su itable and fit for the
customer’s applications and products planned, as well as
for the planned a pplication and use of custo m er’s third
party customer(s). Customers should provide appropriate
design and opera t ing saf eg ua rd s to minimize the risks
associated with their applications an d products.
NXP Semiconduc tors does n ot a ccept any liabil ity rela ted
to any default, damage, costs or problem which is based
on any weakne ss or default in t he customer’s applic ations
or products, or the application or use by customer’s third
party customer( s) . C us to m er is responsible for doing all
necessary testing for the customer’s applications and
products using NXP Semiconductors produc ts in order to
avoid a default of the applic ations and the products or of
the application or use by customer’s third party
customer(s). NXP does not accept any liability in this
respect.
1998 Apr 01 17
NXP Semiconductors Product specification
1 W BTL audio amplifier TDA8541
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
(proper) operation of the device at these or any other
conditions abo ve those given in the Recommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
permanently and irreversibly affect the quality and
reliability of the device.
Terms and conditions of commercial sale NXP
Semiconductors products are sold s ubject to the general
terms and conditio ns of commercial sale, as published at
http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written ind i vidual agreement. In case an
individual agreeme nt is co nc luded only the terms and
conditions of the resp ective agreement shall app ly. NXP
Semiconductors hereby expressly objects to a pplying the
customer’s general terms and conditions with regard to the
purchase of NXP Semicon ductors products by customer.
No offer to sell or license Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual proper ty rights.
Export control This document as well as the item(s)
described he re in may be subject to export control
regulations. Export might require a prior authorization from
national auth or itie s.
Quick refer ence data The Quick reference data is an
extract of th e product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaus tive or legally binding.
Non-automotive qualified products Unless this data
sheet expressly states that this specific NXP
Semiconductors product is au tomotive qualified, the
product is not suitable for automotive use. It is neither
qualified nor te sted in accordanc e with automot ive testing
or application requirements. NXP Semiconductors accepts
no liability for inclusion and/or use of non-automotive
qualified prod ucts in automotive eq uip ment or
applications.
In the event that customer uses the product for design-in
and use in automotive applications to automotive
specifications and standards, customer (a) shall use the
product without NXP Semiconductors’ warranty of the
product for such au t omo tive application s, use and
specifications, and (b) whenever customer uses the
product for automotive applications beyond NXP
Semiconductors’ specifications such use shall be so lely at
customer’s own ris k, and (c) customer fully inde m nifies
NXP Semiconductors for any liability, damages or failed
product clai ms r esult ing fr om custo mer desi gn an d us e o f
the product for automotive ap plic ations beyond NXP
Semiconductors st andard warran ty and NXP
Semiconductors’ product specifications.
NXP Semiconductors
provides High Performance Mixed Signal and Standard Product
solutions that leverage its leading RF, Analog, Power Management,
Interface, Security and Digital Processing expertise
Contact information
For additional information p lease visit: http://www.nxp.com
For sales offices addresses send e-mail to: salesaddresses@nxp.com
© NXP B.V. 2010
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information pr e sent ed in this documen t d oes not form part o f an y q uot ation or contract, is b elieve d to be accurate a nd re li a ble and may be change d
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimer s. No changes were made to the technical content, exc ept for package outline
drawings which were updated to the latest version.
Printed in The Netherlands 545102/00/05/pp18 Date of releas e : 1998 Apr 01 Document order number: 9397 750 03352