Numerical Index 2N2968- 2N3064 aie MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS | =| REPLACE. | PAGE Po {E/T | Vee | Yor |= hee @ Ie Vexsan @ le 2/4 |2 TPE JE 7S] Ment | numper| USE 5 el he |B] oT el z)a @ 25C |S} C | (volts) | (volts) | 5 | (min) (max) >| (volts) s 3 3/2 2N2968 S}P BMS 150M 1A | 140 30 10 | 0 i5 100* 0.6 10M 8.0M |T 2N2969 S}P BMS 150M | A | 140 30 to | 0 15 100% 0.6 10M 8.0M | T 2n2970 |S|P BMs | 150M] A | 140 30 20/0} 10 100* | 0.8 LOM 4.0m | T 2N2971 S|P BMS 150M | A | 140 30 20190 10 100%* 0.8 10M 4,0M | T 2N2972 S|N 11-27] DFA | 0.25W |] A | 200 45 45 1|0 60 | 240 10* 0.35 1.0M 60M | T 2N2973 | S}N 11-27] DFA | 0.25W | A | 200 45 45 | 0 | 150 | 600 ioe } 0.35] 1.0M 60M | 'T 2n2974 |S|N 11-27] DFA | 0.25w | A | 200 45 4510] 60 | 240 lox | 0.35] 1.0M 60M | T 2n2975 |S|N 11-27] DFA | 0.25w | A | 200 45 45 | 0 | 150 } 600 Loe | 0.35 | L.0M 60M | T 2N2976 |S|N 11-27] pra | 250M | A | 200 45 4510 | 60 | 240 lox | 0.35 | 1.0M 60M | T 2n2977 | S|N 11-27] DFA | 250m | A | 200 45 45 | 0 [150 | 600 tox | 0.35 | 1.om 60M | T 2n2978 |S|N 11-27{ DFA | 250M ] A | 200 60 60 |o | 60 | 240 toe | 0.35 | 1.0m 60M | T 2N2979 | S}N 11-27] DFA | 0.25W | A | 200 60 60 | 0 } 150 | 600 10% | 0.35} 1.0M 60M | T 2n2980 |S |N{2n2060A] 11-6 | pra] 0.25w fA | 200 | 100 60/0] 25] 75 10* 1.2 50M | 50 /E 60M | T 2N2981 S| N | 2N2223 11-6 DFA { 0.25W | A | 200 100 60 | 0 50 | 200 LOM 1.2 50M 40 ]E 50M }T 2N2982 |S |N|2N2223A] 11-6 | DFA|0.25W]A|200 | 100 60 |0 | 50 | 200 10M 1.2 50M | 40 [E 50M | T 2N2983 | S|N LPA]| 1.0Ww/]A [175] 155 solo]} 20] 60] soom 0.6| 1.0A 2015 60m | T 2N2984 |S|N tPA | 1.0W]A]175 | 185 |] 120}0} 20] 60] 500M 0.8] 200M 20) E 60M } T 2N2985 |S|N upA| 1.0w]A}175] 155] 80/0] 40/120] Soom} 0.8] 200M] 40]/E 60M | T 2N2986 |S|N LPA} 1.0W{A]|175] 185 | 120]0] 40] 120] Soom] 0.8] 200M] 40 ]E 60M | T 2n2987 | S|N LPA} 1.0W] A | 200 95 8o}o] 25] 75} 200M] 0.8] 200M 25/8 30M | T 2N2988 S|N LPA 1.0W | A | 200 155 100 | 0 25 75 200M 0.8 200M 25 /E 30M | T 2N2989 Ss{N LPA L.ow | A | 200 95 80 | 0 60 | 120 200M 0.8 200M 50 |E 30M | T 2n2990 | S|N tPA | 1.0w]A|200} 155 | 100]0 | 60] 120/ 200M 0.8{ 200M] 50]/E 30M | T 2n2991_ |[S|N Lea |_2.0w | a | 200 95 so}o} 25] 75 | 200m} 0.8{ 200M 25 {E 30M | T 2N: S|N LPA 2.0W | A ; 200 155 100 [0 20 1.0M 0.8 200M 25 ,E 30M | T S]N LPA 2.0W | A ; 200 95 80} 0 60 | 120 200M 0.8 200M 50 |E 30M | T SIN LPA 2.0W 1A {200 155 100 | 0 60 | 120 200M 0.8 200M 50 ,E 30M | T S|N HPA L5W ]A | 175 120 100 | 0 25 90 0.24 1.7 0,2A 30] E 10M | T G] P | 2N3283 9-51 RFA 75M | A | 100 15 10 | 0 25 | 500 4.0M 35; E 400M | T G| P | 2N3279 9-49 | RFA 75M | A | 100 30 15 ]0 |] 40] 500] 4.0m 50 ]E | 400M {Tr G| P | 2N3284 9-51 RFA 75M | A | 100 13 1210 15 | 300 3.0M 20 ,E 600M | T G | P | 2n3283 9-51 | RFA 75M | A | 100 15 10 ;o]} 10 3.0M Is JE | 1.46 ]T Thyristors, see Table on Page 1-154 2N3008 2N3009 SIN 8-181] HSS 360M | A | 200 40 15 | 0 30 | 120 30M 0.18 30M 350M | T 2n3010 |S|N 8~183| Hss | 300m [A | 200 is | 6.0 ]o] 25 | 125 lom | 0.25 10M 600M | T 2N3011 |s|N 8-185 | HSS | 360M | A | 200 30 12 {0 | 30 | 120 10M 0.2 10M 400M | T 2N3012 S| P | MM2894 8-328 | MSS 360M A } 200 12 12 +0 30 | 120 30M 0.15 LOM 400M | T 2N3013 S|N 8~187} HSS 360M | A | 200 40 15 | 0 30 | 120 30M 0.18 30M 350M | T 2n3014 |S|N 8~187| HSS | 360M | A | 200 40 20 |o | 30 | 120 30M | 0.18 10M 350M | T 2N3015 Ss ,N 8-187] HSS 800M | A | 200 60 30 | 0 30 | 120 150M 0.4 150M 250M | T 2n3016 | S|N HFA { 3.33W |c]150 | 100 5010] 607150] 1.0A } 0.75] 1.0A 200M | T 2N3017 | stn HFA | 3.33W/c {150 | 100 50 fo | 60} 150} 2.04 | 0.75 | 5.04 200M | T 2N3018 S| N HFA 25W | Cc | 150 100 50 |} 0 60 | 150 LOA 0.75 5.0A 200M | T 2N3019 S|N 8-189] RFA O.8W |) A | 200 140 80 | O | 100 | 300 | 0,15A 0.2 | O.1L5A 80 /E 100M | T 2N3020 S|N 8~189] RFA 0.8W } A ; 200 140 80] 0 40 | 120] 0.154 0.2 {0.154 30 |E 80M | T 2N3021 |S] P 7+99 | PHS 2sw|c | 175 30 30 {o] 20] 60] 1.0a 1.5 | 3.0A 60M | T 2N3022 stp 7-99 PHS 25W 1c 175 45 45 |90 20 60 LOA 1.5 3.04 60M | T 2N3023 $|P 7-99 PHS 25W |} c 4175 60 60 | 0 20 60 1.0A 1.5 3.0A 60M | T 2N3024 |S|P 7-99 | PHS 25w {Cc | 175 30 30/0 | 501180] 1.04 1.0] 3.0A 60M | T 2N3025 |S] P 7-99 | PHS 25w | c | 175 45 45 |o | 504180] 1.0A 1.0 { 3.04 60M | T 2N3026 |S|P 7-99 | PHS 25w | c | 175 60 60 }0 | 50/180] 1.04 1.0] 3.0A 60M | T 2N3027 thru Thyristors, see Table on Page 1-154 2N3032 2N3033 | s|N spp} 300M{A 1/175] 100 | 100]R 1.0] 100M 2N3034 SIN SPP 300M | A {175 70 70 |R 1.0 100M 2N3035 |S|N SPP | 300M | A } 175 50 50 ]R 1.0} 1OOM 2N3036 SUN AFA 800M | A | 200 120 80 [0 50 { 150 150M 0.25 150M 4O1E 50M | T 2n3037 |S |N AFA | 360m |A [175] 120 | 70/0 [| 40 | 120 0.2, tom! 30/e | som] T 2N3038 |S|N AFA} 360M {A }175 | 100 60 ]0 | 80 | 240 0.2 10M 60 | E 50M | T 2n3039 1S] P ara| 360m {fA ]175| 50] 35 ]0] 20] 80 20;E | 50M/T 2n3040 |s | P AFA | 360M | A | 175 40 30 {0 | 40 | 160 0.2 lom | 40 /E 50M | T 2N3043 {S| N 11-29 | pra | 250m | A | 200 45 45 | 0 | 100 | 300 1.0 1oM | 130] E 30M | T 2N3044 |S] N 11-29] DFA} 250M] A | 200 45 45 } 0 | 100 } 300 1.0 1OM | 130) 30M | T 2N3045 | S|N 11-29] AFA | 250M |A {200 45 45 |0 | 100 | 300 1.0 tom | 130] 30m | T 2N3046 [S| N 11-29) DFA | 250M {A | 200 45 45 |o | 50 | 200 1.0 10M 65 | E 30M | T 2n3047 |S] N 11-29] DFA | 250m [A | 200 45 45 10 | 50 | 200 1.0 10M 65 |E 30M | T 2N3048 | S|N 11-29] AFA | 250M] A | 200 45 45 |o | 50 | 200 1.0 LOM 65 [E 30M | T 2N3049 |S} P 11-31] pra | 250M | A | 200 25 20 |o {| 20 | 120 0.2 10M 30 |E 60M | T 2N3050 |S|P 11-31] DFA | 250M | A | 200 25 20 ]}0 } 20} 120 0.2 LOM 30] E 60M | T 2N3051 S| P APA 250M | A | 175 25 20 | 0 20 | 120 0.2 10M B0]E 60M | T 2N3052 S|N RSS 250M 1A [175 35 15 10 25 | 130 10M 0.25 LOM 200M | T 2N3053 {S| N 8-191] HSS | 5.0W | c | 200 60 40 |0 | 50 | 250] 0.15 1.4] 0.154 loom | T 2N3054 |S|N LPA 25w | c | 200 90 60 |R] 25} 100] 0.5 1.0} 0.54 25 |E 30K | E 2N3055 |S] N 7-104) LPA} 115W]c }200} 100 70)R | 20] 70] 4.08 1.1) 4,04 1S) E 20K | E 2N3056 1S|N RFA} 0.4w|A |200 | 100 60 ]}0 | 40 ]120 | 0.154 | 0.25 | 0.154 30] E 80M | T 2N3056A |S |N RFA| 0.4W |A {200 | 140 80 ]o | 40] 120 | 0.15a 0.2 | 0.154 30 |E 80M | T 2N3057 |S|N RFA} 0.4W | A {200 | 100 60 {0 |100 | 300 {0.15a | 0.25 | O.15A 80] | loom | T 2N3057A 1S | N RFA| 0.4W]A]200 | 140 80 | 0 | 100 | 300 | 0.15a 0.2} 0.154 80]E | loom | T 2n3058 |s|P AFA | 400M|A |200{ 6.0 | 6.0 |0[ 401120} 100N 40 /E 2n3059 |s|P AFA | 400M | A | 200 10 10 | 0 | 100 | 300 1o* 100 | E 2n3060 |S|P AFA | 400M | A | 200 70 60/0 | 30] 90] 1.0m 30] E 2N3061 |S} P AFA | 400M | A | 200 70 60|0] 60/180] L.om 60 | E 2n3062 | 8 | P AFA | 400M | A } 200 90 80/01 20] 80] L.om 20 | E 2N3063 S|P AFA 400M | A | 200 90 80 | 0 50 | 150 1.0M 50/,E ang064 |[s|P AFA | 400M fA [200 | 110 | too fo} 15 | 45 | 1.0m is |e 1-135KX KX AANAR WN AN .MW\MWQ Q QA MAG ~ ANNALARA WS AAS WN WS WK QQ SS SX NS ANANAN WG WAAR! IQui'_'w y K\WYW MN NS SS ~ NS LL WH WL WS NS WAAAN WS Switching and General Purpose Transistors QUICK SELECTOR GUIDES SILICON HIGH-SPEED SWITCHING AND GENERAL PURPOSE TRANSISTORS The following two tables categorize the silicon devices included in this section into two classifications those intended for general-purpose switching and amplifier applications, and those recommended primarily for high-speed saturated switching purposes. Only the preferred devices those that merit first consideration for new designs are listed. In each table, the devices are grouped in voltage and current ranges. The voltage given is the minimum collector-emitter breakdown voltage (BVc RO): The current range columns represent operating current values for which optimum current gain (hpp) and/or collector-emitter satura- tion voltage (VoR(sat)) are specified in the data sheets. SATURATED SWITCHING TRANSISTORS (SILICON) Current versus Voltage OPTIMUM COLLECTOR CURRENT BVcro Oto 10mA 10 mA to 100 mA 100 mA to 500 mA 500 mA to 1.08 LOAtO3.0A 3.0A to 5.0A Min Volts NPN PNP NPN. PNP NPN PNP NPN PNP NPN PNP NPN PNP o 2N3010 2N2894 2N2369A| 2N2894 2N3009 2N3303 2N3303 2N3493 | 2N3546 2N3009 | 2N3546 2N3013 MM709 | 2N4411 2N3010 2N3510 MM1748 2N3011 2N3511 2N3013 2N3647 2N3210 2N3648 19 2N3211 20 2N702 2N2501 2N24%6 2N703 2N3014 2N2477 | 2N3227 2N2501 2N3508 2N2847 29 2N3509 2N2848 30 2N2537 2N2537 2N3252 2N3734 2N2538 2N2538 2N3724 2N3736 2N2539 2N2539 2N3734 2N2540 2N2540 2N3736 2N2845 2N4013 2N2846 2N4046 2N3015 2N3724 2N4013 39 2N4046 40 2N3725 2N3725 | 2N3467 2N3253 | 2N3467 2N3444 | 2N3762 2N3506 2N4014 2N4014 | 2N3468 2N3444 | 2N3468 2N3735 | 2N3764 2N3507 2N4047 2N3725 | 2N3762 2N3737 2N3735 | 2N3764 2N3737 2N4014 59 2N4047 60 2N3763 2N3763 79 2N3765 2N3765 Switching and General Purpose Transistors 2n3013 2n3014 For Specifications, See 2N3009 Data Sheet 2N3015 (siticon) pe 350 MHz NPN silicon annular transistor designed for high- speed, medium-power saturated switching applications. CASE 31 (TO-5) Collector connected to case MAXIMUM RATINGS (a = 25C unless otherwise noted) Rating Symbol Value Unit Collector-Emitter Voltage* VcEO* 30 Vde Collector-Base Voltage VCB 60 Vde Emitter-Base Voltage Ven 5 Vde Total Device Dissipation @ Ta = 25C Pp 800 mW Derate above 25C 4.6 mW/C Total Device Dissipation @ Tg = 25C Pp 3.0 Watts Derate above 25C 17.2 mW/C Operating and Storage Junction Ty, Tstg -65 to+ 200 C Temperature Range Lead Temperature _ 300 oC (Soldering, 60 second time limit) *Applicable from 1.0 mA to 30 mA (Pulsed) 8-1872N3015 (continued) Switching and General Purpose Transistors - ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Symbol | Min | Max | Unit | Collector-Emitter Sustaining Voltage* (Ig = 30 mAdc, Ip = 0} BVcEO(sus)* Vde 30 Collector-Bage Breakdown Voltage (ig = 100uAde, Ip = 0) BVCBO 60 Ve Emitter-~Base Breakdown Voltage (ig = 100 pAde, Ig = 0) BVeRBO Vde Collector-Cutoff Current (Vog = 30 Vde, Vp = 0) IcEs uAde Collector-Cutoff Current (Veg = 30 Vde, Ip = 0, Ta = 125C) Icpo uAdc Base Leakage Current (Vog = 30 Vde, Vpp = 9) Ipu pAdc ON CHARACTERISTICS DC Current Gain* (Ic = 150 mAdc, Veg = 10 Vde) (Ig = 300 mAdc, Vog = 0.7 Vdc) hpe* _ 30 120 10 _ Collector-Emitter Saturation Voltage* (Ig = 150 mAdc, Ip = 15 mAdc) (Ig = 500 mAdc, Ip = 50 mAdc) Vex (sat)* Vde Base-Emitter Saturation Voltage* (i = 150 mAdc, Ig = 15 mAdc) {Ic = 500 mAdc, Ip = 50 mAdc) VBE(sat)* vide me av DYNAMIC CHARACTERISTICS Current-Gain Bandwidth Product (ig = 50 mAdc, Vopr = 10 Vde,f = 100 MHz) ft MHz Output Capacitance (Vcp = 10 Vdc, Ip = 0,f = 140 kHz) Cob pF Turn-On Time (Figure 1) (Voc = 25 Vde, I ~ 300 mAdc, Ip, ~ 30 mAdc) (Vag = 25 Vde, Ig ~ 500 mAdc, Ipi ~ 50 mAdc) on _ 40 _ 40 Turn-Off Time (Figure 2) (Voc = 25 Vdc, Ic = 300 mAdc, Ipy (Voc = 25 Vde, Ig = 500 mAdc, Ip} Tp2 30 mAdc) B2 75 0 mAde) RB toft ns *Pulse Test: Pulse Width = 300 4:8, Duty Cycle 2% FIGURE 1 TURN-ON TIME TEST CiRCUIT +25V R, FIGURE 2 TURN-OFF TIME TEST CIRCUIT 200 ns Vin | 20092 Vin 05 uF 0 OSCILLOSCOPE 0 OSCILLOSCOPE tL <2ns hay te< Ins . Ri, = 100 k 2 Rin 100 KQ 5092 50Q 200 ns t. << 2ns L Ie Vin R, le Vin Ves R, mA Voits ohms mA Volts Volts ohms 300 7 80 300 13 10 80 500 i 48 500 21 16 48 8-188