ABB Semiconductors AG reserves the right to change specifications without notice.
VRRM = 2500 V
IFAVM = 420 A
IFSM =8.5kA
VF0 =1.7V
rF=0.62
mΩ
ΩΩ
Ω
VDClink = 1500 V
Doc. No. 5SYA1114-03 Sep. 01
• Patented free-floating silicon technology
• Low on-state and switching losses
• Optimized for use as freewheeling diode in GTO converters
• Standard press-pack housing, hermetically cold-welded
• Cosmic radiation withstand rating
Blocking
VRRM Repetitive peak reverse voltage 2500 V Half sine wave, tP = 10 ms, f = 50 Hz
IRRM Repetitive peak reverse current ≤50 mA VR = VRRM, Tj = 125°C
VDClink Permanent DC voltage for 100 FIT
failure rate 1500 V 100% Duty
VDClink Permanent DC voltage for 100 FIT
failure rate V5% Duty
Ambient cosmic radiation at
sea level in open air.
Mechanical data (see Fig. 12)
min. 10 kN
FmMounting force max. 12 kN
aAcceleration:
Device unclamped
Device clamped
50
200
m/s2
m/s2
m Weight 0.25 kg
DSSurface creepage distance ≥30 mm
DaAir strike distance ≥20 mm
Fast Recovery Diode
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ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1114-03 Sep. 01 page 2 of 6
On-state (see Fig. 2, 3)
IFAVM Max. average on-state current 420 A
IFRMS Max. RMS on-state current 670 A
Half sine wave, Tc = 85°C
IFSM Max. peak non-repetitive 8.5 kA tp = 10 ms Before surge:
surge current 27 kA tp = 1 ms Tc = Tj = 125°C
0.36⋅106A2stp= 10ms
After surge:
òI2dt Max. surge current integral
0.36⋅106A2stp= 1ms
VR ≈ 0 V
VFForward voltage drop ≤2.3 V IF= 1000 A
VF0 Threshold voltage 1.7 V Approximation for
rFSlope resistance 0.62 mΩIF= 500…3500 A
Tj = 125°C
Turn-on (see Fig. 4, 5)
Vfr Peak forward recovery voltage ≤16 V di/dt = 500 A/µs, Tj = 125°C
Turn-off (see Fig. 6 to 11)
Irr Reverse recovery current ≤470 A
Qrr Reverse recovery charge ≤840 µC
Err Turn-off energy ≤0.34 J
di/dt = 300 A/µs, IF = 700 A,
Tj = 125°C, VRM = 2300 V,
CS = 2µF (GTO snubber circuit)
Thermal (see Fig. 1)
TjOperating junction temperature range -40...125°C
Tstg Storage temperature range -40...125°C
RthJC Thermal resistance junction to case ≤80 K/kW Anode side cooled
≤80 K/kW Cathode side cooled
≤40 K/kW Double side cooled
RthCH Thermal resistance case to heatsink ≤16 K/kW Single side cooled
Fm =
10… 12 kN
≤8 K/kW Double side cooled
Analytical function for transient thermal impedance.
i1234
R i(K/kW) 20.95 10.57 7.15 1.33
τi(s) 0.396 0.072 0.009 0.0044
)e-(1R = (t)Z
n
1i
/t-
ithJC å
=
i
τ
Fm = 10… 12 kN Double side cooled
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Doc. No. 5SYA1114-03 Sep. 01 page 3 of 6
Fig. 1 Transient thermal impedance (junction-to-case) vs. time in analytical and graphical form (max. values).
Fig. 2 Forward current vs. forward voltage (typ.
and max. values) and linear approximation
of max. curve at 125°C.
Fig. 3 Surge current and fusing integral vs. pulse
width (max. values) for non-repetitive, half-
sinusoidal surge current pulses.
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ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1114-03 Sep. 01 page 4 of 6
Fig. 4 Typical forward voltage waveform when the
diode is turned on with a high di/dt.
Fig. 5 Forward recovery voltage vs. turn-on di/dt
(max. values).
Fig. 6 Typical current and voltage waveforms at turn-off when the diode is connected to an RCD snubber, as
often used in GTO circuits.
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Doc. No. 5SYA1114-03 Sep. 01 page 5 of 6
Fig. 7 Reverse recovery current vs. turn off di/dt
(max. values).
Fig. 8 Reverse recovery charge vs. turn off di/dt
(max. values).
Fig. 9 Turn-off energy vs. turn-off di/dt for IF = 300
A (max. values).
Fig. 10 Turn-off energy vs. turn-off di/dt for IF = 700
A (max. values).
5SDF 05D2505
ABB Semiconductors AG reserves the right to change specifications without notice.
ABB Semiconductors AG Doc. No. 5SYA1114-03 Sep. 01
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)62 888 6419
Fax +41 (0)62 888 6306
Email abbsem@ch.abb.com
Internet www.abbsem.com
Fig. 11 Turn-off energy vs. turn-off di/dt for IF = 2000
A (max. values).
Fig. 12 Outline drawing. All dimensions are in
millimeters and represent nominal values
unless stated otherwise.
