Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 8
1Publication Order Number:
MMBT2369LT1/D
MMBT2369LT1G,
SMMBT2369LT1G,
MMBT2369ALT1G,
SMMBT2369ALT1G
Switching Transistors
NPN Silicon
Features
AEC−Q101 Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage VCEO 15 Vdc
Collector−Emitter Voltage VCES 40 Vdc
Collector−Base Voltage VCBO 40 Vdc
Emitter−Base Voltage VEBO 4.5 Vdc
Collector Current − Continuous IC200 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board
(Note 1) TA = 25C
Derate above 25C
PD225
1.8
mW
mW/C
Thermal Resistance, Junction−to−Ambient RqJA 556 C/W
Total Device Dissipation Alumina
Substrate, (Note 2) TA = 25C
Derate above 25C
PD300
2.4
mW
mW/C
Thermal Resistance, Junction−to−Ambient RqJA 417 C/W
Junction and Storage Temperature TJ, Tstg −55 to +150 C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping†
ORDERING INFORMATION
MARKING DIAGRAM
COLLECTOR
3
1
BASE
2
EMITTER
http://onsemi.com
xxx = M1J or 1JA
M = Date Code*
G= Pb−Free Package
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
(Note: Microdot may be in either location)
MMBT2369ALT1G SOT−23
(Pb−Free)
3,000 /
Tape & Reel
MMBT2369LT1G SOT−23
(Pb−Free)
3,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
SOT−23
CASE 318
STYLE 6
1
xxx M G
G
SMMBT2369LT1G SOT−23
(Pb−Free)
3,000 /
Tape & Reel
SMMBT2369ALT1G SOT−23
(Pb−Free)
3,000 /
Tape & Reel
MMBT2369LT1G, SMMBT2369LT1G, MMBT2369ALT1G, SMMBT2369ALT1G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 3)
(IC = 10 mAdc, IB = 0)
V(BR)CEO 15 − −
Vdc
Collector−Emitter Breakdown Voltage
(IC = 10 mAdc, VBE = 0)
V(BR)CES 40 − −
Vdc
Collector−Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
V(BR)CBO 40 − −
Vdc
Emitter−Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO 4.5 − −
Vdc
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
(VCB = 20 Vdc, IE = 0, TA = 150C)
ICBO
−
−
−
−
0.4
30
mAdc
Collector Cutoff Current
MMBT2369A (VCE = 20 Vdc, VBE = 0)
ICES
− − 0.4
mAdc
ON CHARACTERISTICS
DC Current Gain (Note 3)
MMBT2369, SMMBT2369 (IC = 10 mAdc, VCE = 1.0 Vdc)
MMBT2369A, SMMBT2369A (IC = 10 mAdc, VCE = 1.0 Vdc)
MMBT2369A, SMMBT2369A (IC = 10 mAdc, VCE = 0.35 Vdc)
MMBT2369A, SMMBT2369A (IC = 10 mAdc, VCE = 0.35 Vdc, TA = −55C)
MMBT2369A, SMMBT2369A (IC = 30 mAdc, VCE = 0.4 Vdc)
MMBT2369, SMMBT2369 (IC = 100 mAdc, VCE = 2.0 Vdc)
MMBT2369A, SMMBT2369A (IC = 100 mAdc, VCE = 1.0 Vdc)
hFE 40
−
40
20
30
20
20
−
−
−
−
−
−
−
120
120
−
−
−
−
−
−
Collector−Emitter Saturation Voltage (Note 3)
MMBT2369, SMMBT2369 (IC = 10 mAdc, IB = 1.0 mAdc)
MMBT2369A, SMMBT2369A (IC = 10 mAdc, IB = 1.0 mAdc)
MMBT2369A, SMMBT2369A (IC = 10 mAdc, IB = 1.0 mAdc, TA = +125C)
MMBT2369A, SMMBT2369A (IC = 30 mAdc, IB = 3.0 mAdc)
MMBT2369A, SMMBT2369A (IC = 100 mAdc, IB = 10 mAdc)
VCE(sat)
−
−
−
−
−
−
−
−
−
−
0.25
0.20
0.30
0.25
0.50
Vdc
Base −Emitter Saturation Voltage (Note 3)
MMBT2369/A, SMMBT2369/A (IC = 10 mAdc, IB = 1.0 mAdc)
MMBT2369A, SMMBT2369A (IC = 10 mAdc, IB = 1.0 mAdc, TA = −55C)
MMBT2369A, SMMBT2369A (IC = 30 mAdc, IB = 3.0 mAdc)
MMBT2369A, SMMBT2369A (IC = 100 mAdc, IB = 10 mAdc)
VBE(sat) 0.7
−
−
−
−
−
−
−
0.85
1.02
1.15
1.60
Vdc
SMALL−SIGNAL CHARACTERISTICS
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Cobo
− − 4.0
pF
Small Signal Current Gain
(IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz)
hfe 5.0 − −
−
SWITCHING CHARACTERISTICS
Storage Time
(IB1 = IB2 = IC = 10 mAdc)
ts
−5.0 13
ns
Turn−On Time
(VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc)
ton
−8.0 12
ns
Turn−Off Time
(VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc, IB2 = 1.5 mAdc)
toff
−10 18
ns
3. Pulse Test: Pulse Width v300 ms, Duty Cycle v2.0%.
MMBT2369LT1G, SMMBT2369LT1G, MMBT2369ALT1G, SMMBT2369ALT1G
http://onsemi.com
3
Figure 1. ton Circuit − 10 mA Figure 2. ton Circuit − 100 mA
Figure 3. toff Circuit − 10 mA Figure 4. toff Circuit − 100 mA
Figure 5. Turn−On and Turn−Off Time Test Circuit
+10.6 V
-1.5 V
0
t1
< 1 ns
PULSE WIDTH (t1) = 300 ns
DUTY CYCLE = 2%
3 V 270 W
3.3 k Cs* < 4 pF
10 V 95 W
1 k Cs* < 12 pF
+10.8 V
-2 V 0
t1
< 1 ns
PULSE WIDTH (t1) = 300 ns
DUTY CYCLE = 2%
+10.75 V
0
-9.15 V
t1
< 1 ns
PULSE WIDTH (t1) = 300 ns
DUTY CYCLE = 2%
< 1 ns
-8.6 V
+11.4 V t1
0
PULSE WIDTH (t1) BETWEEN
10 AND 500 ms
DUTY CYCLE = 2%
270 W
3.3 k Cs* < 4 pF
95 W
1 k Cs* < 12 pF
10 V
1N916
Vout 90%
10%
Vin
0
ton
Vin
3.3 kW
50 W
220 W
50 W
0.1 mF
Vout
3.3 k
0.0023 mF0.0023 mF
0.005 mF 0.005 mF
0.1 mF 0.1 mF
VBB +
-+
-VCC = 3 V
Vin
0
90%
10%
toff
Vout
VBB = +12 V
Vin = -15 V
TO OSCILLOSCOPE
INPUT IMPEDANCE = 50 W
RISE TIME = 1 ns
TURN-OFF WAVEFORMS
PULSE GENERATOR
Vin RISE TIME < 1 ns
SOURCE IMPEDANCE = 50 W
PW 300 ns
DUTY CYCLE < 2%
TURN-ON WAVEFORMS
*Total shunt capacitance of test jig and connectors.
*Total shunt capacitance of test jig and connectors.
MMBT2369LT1G, SMMBT2369LT1G, MMBT2369ALT1G, SMMBT2369ALT1G
http://onsemi.com
4
6
5
4
3
2
1
100.1 0.2 0.5 1.0 2.0 5.0
REVERSE BIAS (VOLTS)
CAPACITANCE (pF)
SWITCHING TIMES (nsec)
LIMIT
TYPICAL
Cob
Cib
TJ = 25C
Figure 6. Junction Capacitance Variations
100
2
5
10
20
50
1 2 5 10 20 50 100
IC, COLLECTOR CURRENT (mA)
Figure 7. Typical Switching Times
F = 10
VCC = 10 V
VOB = 2 V
tr (VCC = 3 V)
VCC = 10 V
td
ts
tr
tf
+6 V
-4 V
0
t1
< 1 ns
PULSE WIDTH (t1) = 300 ns
DUTY CYCLE = 2%
10 V 980
500 Cs* < 3 pF
C COPT
TIME
C < COPT C = 0
Figure 8. Turn−Off Waveform Figure 9. Storage Time Equivalent Test Circuit
VCE, MAXIMUM COLLECTOR-EMITTER VOLTAGE (VOLTS)
1.0
0.8
0.6
0.4
0.2
0.02 0.05 0.1 0.2 0.5 1 2 5 10 20
IC = 3 mA IC = 10 mA IC = 30 mA IC = 50 mA IC = 100 mA
TJ = 25C
IB, BASE CURRENT (mA)
Figure 10. Maximum Collector Saturation Voltage Characteristics
MMBT2369LT1G, SMMBT2369LT1G, MMBT2369ALT1G, SMMBT2369ALT1G
http://onsemi.com
5
hFE, MINIMUM DC CURRENT GAIN
V(sat), SATURATION VOLTAGE (VOLTS)
200
100
20
50
1 2 5 10 20 50 100
IC, COLLECTOR CURRENT (mA)
Figure 11. Minimum Current Gain Characteristics
VCE = 1 V
TJ = 125C
75C
25C
-15C
-55C
TJ = 25C and 75C
1.4
1.2
1.0
0.8
0.6
0.4
0.2 1 2 5 10 20 50 100
IC, COLLECTOR CURRENT (mA)
Figure 12. Saturation Voltage Limits
F = 10
TJ = 25C
MAX VBE(sat)
MIN VBE(sat)
MAX VCE(sat)
MMBT2369LT1G, SMMBT2369LT1G, MMBT2369ALT1G, SMMBT2369ALT1G
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6
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
ǒmm
inchesǓ
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
SOLDERING FOOTPRINT
VIEW C
L
0.25
L1
q
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.001
b0.37 0.44 0.50 0.015
c0.09 0.13 0.18 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.10 0.20 0.30 0.004
0.040 0.044
0.002 0.004
0.018 0.020
0.005 0.007
0.114 0.120
0.051 0.055
0.075 0.081
0.008 0.012
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.029
c
0−−− 10 0 −−− 10
q
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MMBT2369LT1/D
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