MMBT2369LT1G, SMMBT2369LT1G, MMBT2369ALT1G, SMMBT2369ALT1G Switching Transistors http://onsemi.com NPN Silicon Features AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique SOT-23 CASE 318 STYLE 6 Site and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector -Emitter Voltage VCEO 15 Vdc Collector -Emitter Voltage VCES 40 Vdc Collector -Base Voltage VCBO 40 Vdc Emitter -Base Voltage VEBO 4.5 Vdc IC 200 mAdc Symbol Max Unit 225 1.8 mW mW/C 556 C/W 300 2.4 mW mW/C RqJA 417 C/W TJ, Tstg -55 to +150 C Collector Current - Continuous 1 BASE 2 EMITTER MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board (Note 1) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature PD RqJA PD 1 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR-5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2011 November, 2011 - Rev. 8 xxx M G G 1 xxx = M1J or 1JA M = Date Code* G = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Package Shipping MMBT2369LT1G SOT-23 (Pb-Free) 3,000 / Tape & Reel SMMBT2369LT1G SOT-23 (Pb-Free) 3,000 / Tape & Reel MMBT2369ALT1G SOT-23 (Pb-Free) 3,000 / Tape & Reel SMMBT2369ALT1G SOT-23 (Pb-Free) 3,000 / Tape & Reel Device For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: MMBT2369LT1/D MMBT2369LT1G, SMMBT2369LT1G, MMBT2369ALT1G, SMMBT2369ALT1G ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Collector -Emitter Breakdown Voltage (Note 3) (IC = 10 mAdc, IB = 0) V(BR)CEO Collector -Emitter Breakdown Voltage (IC = 10 mAdc, VBE = 0) V(BR)CES Collector -Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO Emitter -Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO Min Typ Max 15 - - 40 - - 40 - - 4.5 - - - - - - 0.4 30 - - 0.4 40 - 40 20 30 20 20 - - - - - - - 120 120 - - - - - - - - - - - - - - - 0.25 0.20 0.30 0.25 0.50 0.7 - - - - - - - 0.85 1.02 1.15 1.60 - - 4.0 5.0 - - - 5.0 13 - 8.0 12 - 10 18 Unit OFF CHARACTERISTICS Collector Cutoff Current (VCB = 20 Vdc, IE = 0) (VCB = 20 Vdc, IE = 0, TA = 150C) ICBO Collector Cutoff Current MMBT2369A (VCE = 20 Vdc, VBE = 0) ICES Vdc Vdc Vdc Vdc mAdc mAdc ON CHARACTERISTICS DC Current Gain (Note 3) MMBT2369, SMMBT2369 (IC = 10 mAdc, VCE = 1.0 Vdc) MMBT2369A, SMMBT2369A (IC = 10 mAdc, VCE = 1.0 Vdc) MMBT2369A, SMMBT2369A (IC = 10 mAdc, VCE = 0.35 Vdc) MMBT2369A, SMMBT2369A (IC = 10 mAdc, VCE = 0.35 Vdc, TA = -55C) MMBT2369A, SMMBT2369A (IC = 30 mAdc, VCE = 0.4 Vdc) MMBT2369, SMMBT2369 (IC = 100 mAdc, VCE = 2.0 Vdc) MMBT2369A, SMMBT2369A (IC = 100 mAdc, VCE = 1.0 Vdc) hFE Collector -Emitter Saturation Voltage (Note 3) MMBT2369, SMMBT2369 (IC = 10 mAdc, IB = 1.0 mAdc) MMBT2369A, SMMBT2369A (IC = 10 mAdc, IB = 1.0 mAdc) MMBT2369A, SMMBT2369A (IC = 10 mAdc, IB = 1.0 mAdc, TA = +125C) MMBT2369A, SMMBT2369A (IC = 30 mAdc, IB = 3.0 mAdc) MMBT2369A, SMMBT2369A (IC = 100 mAdc, IB = 10 mAdc) VCE(sat) Base -Emitter Saturation Voltage (Note 3) MMBT2369/A, SMMBT2369/A (IC = 10 mAdc, IB = 1.0 mAdc) MMBT2369A, SMMBT2369A (IC = 10 mAdc, IB = 1.0 mAdc, TA = -55C) MMBT2369A, SMMBT2369A (IC = 30 mAdc, IB = 3.0 mAdc) MMBT2369A, SMMBT2369A (IC = 100 mAdc, IB = 10 mAdc) VBE(sat) - Vdc Vdc SMALL-SIGNAL CHARACTERISTICS Cobo Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Small Signal Current Gain (IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) hfe pF - SWITCHING CHARACTERISTICS Storage Time (IB1 = IB2 = IC = 10 mAdc) ts Turn-On Time (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc) ton Turn-Off Time (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc, IB2 = 1.5 mAdc) toff 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. http://onsemi.com 2 ns ns ns MMBT2369LT1G, SMMBT2369LT1G, MMBT2369ALT1G, SMMBT2369ALT1G t1 +10.6 V 0 -1.5 V 3V < 1 ns 270 W t1 +10.8 V 3.3 k -2 V Cs* < 4 pF PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2% 10 V 95 W 0 < 1 ns 1k Cs* < 12 pF PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2% *Total shunt capacitance of test jig and connectors. Figure 2. ton Circuit - 100 mA Figure 1. ton Circuit - 10 mA +10.75 V 270 W t1 +11.4 V t1 10 V 0 -8.6 V 0 -9.15 V < 1 ns PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2% Cs* < 12 pF 1k < 1 ns PULSE WIDTH (t1) BETWEEN 10 AND 500 ms DUTY CYCLE = 2% Cs* < 4 pF 3.3 k 95 W 1N916 *Total shunt capacitance of test jig and connectors. Figure 4. toff Circuit - 100 mA Figure 3. toff Circuit - 10 mA TO OSCILLOSCOPE INPUT IMPEDANCE = 50 W RISE TIME = 1 ns TURN-ON WAVEFORMS Vin 0 220 W 10% Vout ton 90% PULSE GENERATOR Vin RISE TIME < 1 ns SOURCE IMPEDANCE = 50 W PW 300 ns DUTY CYCLE < 2% Vin 0.1 mF Vout 3.3 kW 50 W VBB +- 50 W 3.3 k 0.0023 mF 0.005 mF 0.0023 mF 0.005 mF 0.1 mF 0.1 mF 3 10% Vin 90% Vout +V =3V - CC Figure 5. Turn-On and Turn-Off Time Test Circuit http://onsemi.com TURN-OFF WAVEFORMS 0 toff VBB = +12 V Vin = -15 V MMBT2369LT1G, SMMBT2369LT1G, MMBT2369ALT1G, SMMBT2369ALT1G 100 6 LIMIT TYPICAL TJ = 25C 5 Cib SWITCHING TIMES (nsec) CAPACITANCE (pF) 4 3 Cob 2 1 0.1 F = 10 VCC = 10 V VOB = 2 V 50 10 5 ts td 2 0.2 0.5 1.0 2.0 REVERSE BIAS (VOLTS) 5.0 C < COPT 1 10 2 5 10 20 IC, COLLECTOR CURRENT (mA) 50 100 Figure 7. Typical Switching Times t1 +6 V C=0 10 V 980 0 -4 V COPT 500 < 1 ns Cs* < 3 pF PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2% TIME Figure 8. Turn-Off Waveform VCE , MAXIMUM COLLECTOR-EMITTER VOLTAGE (VOLTS) VCC = 10 V tr Figure 6. Junction Capacitance Variations C tf tr (VCC = 3 V) 20 Figure 9. Storage Time Equivalent Test Circuit 1.0 TJ = 25C 0.8 IC = 3 mA IC = 10 mA IC = 30 mA IC = 50 mA IC = 100 mA 0.6 0.4 0.2 0.02 0.05 0.1 0.2 0.5 1 IB, BASE CURRENT (mA) 2 5 Figure 10. Maximum Collector Saturation Voltage Characteristics http://onsemi.com 4 10 20 MMBT2369LT1G, SMMBT2369LT1G, MMBT2369ALT1G, SMMBT2369ALT1G TJ = 125C VCE = 1 V 75C 25C 100 TJ = 25C and 75C -15C 50 -55C 20 1 2 5 10 IC, COLLECTOR CURRENT (mA) 20 50 Figure 11. Minimum Current Gain Characteristics 1.4 V(sat) , SATURATION VOLTAGE (VOLTS) hFE, MINIMUM DC CURRENT GAIN 200 F = 10 TJ = 25C 1.2 MAX VBE(sat) 1.0 MIN VBE(sat) 0.8 0.6 0.4 0.2 MAX VCE(sat) 1 2 5 10 20 IC, COLLECTOR CURRENT (mA) 50 Figure 12. Saturation Voltage Limits http://onsemi.com 5 100 100 MMBT2369LT1G, SMMBT2369LT1G, MMBT2369ALT1G, SMMBT2369ALT1G PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E DIM A A1 b c D E e L L1 HE q c 1 2 e b 0.25 q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 --- 10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 --- MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR L1 VIEW C SOLDERING FOOTPRINT 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. 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