Darlington Amplifier
Transistors
NPN
MAXIMUM R ATINGS
R ating S ymbol Value Unit
C ollector- E mitter Voltage VC E S 30 Vdc
C ollector- B ase Voltage VC B O 30 Vdc
E mitter- Base Voltage VE B O 10 Vdc
C ollector C urrent - C ontinuous IC300 mAdc
THE R MAL C HAR A C TE R IS TIC S
C haracteris tic S ymbol Max Unit
Total Device Diss ipation F R ±5 B oard(1)
TA = 25 C
Derate above 25 C
PD225
1.8
mW
mW/ C
Thermal R esistance J unction to Ambient RJ A 556 C /W
Total Device Dissipation
Alumina S ubstrate,(2) TA = 25 C
Derate above 25 C
PD300
2.4
mW
mW/ C
Thermal R esistance J unction to Ambient RJ A 417 C /W
J unction and S torage Temperature TJ, Ts tg - 55 to +150 C
DE VIC E MA R K ING
MMB TA13 = 1M; MMB T A14LT1 = 1N
E L E C TR IC A L C HA R AC TE R IS T IC S (TA = 25 C unless otherwise noted)
C haracteris tic S ymbol Min Max Unit
OF F C HAR AC TE R IS TIC S
C ollector- E mitter Breakdown Voltage
(IC = 100 uAdc, VB E = 0) V(B R )C E S 30 -
-
-
Vdc
C ollector C utoff C urrent
(VC B = 30 V dc, IE = 0) IC B O 100 nAdc
E mitter C utoff C urrent
(VE B = 10 Vdc, IC = 0) IE B O 100 nAdc
1. FR - 5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
MMBTA13
MMBTA14
1
2
3
S OT -23
COLLECTOR 3
BASE
1
EMITTER 2
q
_
_
_
_
_
_
_
_
http://www.weitron.com.tw
WEITRON
MMBTA13
MMBTA14
WEITRON
http://www.weitron.com.tw
E L E C TR IC A L C HA R AC TE R IS T IC S (TA = 25 C unless otherwise noted) (C ontinued)
C haracteris tic S ymbol Min Max Unit
ON C HA R AC TE R IS T IC S (3)
DC C urrent G ain
(IC = 10 mAdc, VC E = 5.0 Vdc) MMB TA13
MMB TA14
(IC = 100 mAdc, V C E = 5.0 Vdc) MMB TA13
MMB TA14
hFE 5000
10,000
10,000
20,000
-
-
-
-
-
-
-
-
C ollector- E mitter S aturation Voltage
(IC = 100 mAdc, IB = 0.1 mAdc)
VC E (s at) 1.5 Vdc
B ase- E mitter On Voltage
(IC = 100 mAdc, V C E = 5.0 Vdc)
VB E 2.0 Vdc
S MAL L - S IG NAL C HA R AC TE R IS T IC S
C urrent- G ain - Bandwidth P roduct (4)
(IC = 10 mAdc, VC E = 5.0 Vdc, f = 100 MHz)
fT125 MHz
3. P ulse Tes t: P ulse Width 300 us, Duty C ycle 2.0%.
4. fT = |hfe| ftest.
RSin
enIDEAL
TRANSISTOR
FIG .1. Trans is tor Nois e Model
FIG .2 Nois e Voltage
f, FREQUENCY (Hz)
50
100
200
500
20
FIG .3 Nois e C urrent
f, FREQUENCY (H z)
5.0
10
10
20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
BANDWIDTH = 1.0 Hz
RS 0
IC = 1.0 m A
100 mA
10 mA
BANDWIDTH = 1.0 Hz
IC = 1.0 mA
100 mA
10 mA
en, NOISE VOLTAGE (nV)
in, NOISE CURRENT (pA)
10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k
@
MMBTA13
MMBTA14
WEITRON
http://www.weitron.com.tw
FIG .4 Total Wideband Nois e Voltage
RS, SOURCE RESISTANCE (kW)
FIG .5 W ideband Nois e F igure
RS, SOURCE RESISTANCE (kW)
50
70
100
200
30
10
20
1.0 2.0 5.0 10 20 50 100 200 500 1000
BANDWIDTH = 10 Hz TO 15.7 kHz
IC = 10 mA
100 mA
1.0 mA
8.0
10
12
14
6.0
0
4.0
1.0 2.0 5.0 10 20 50 100 200 500 1000
2.0
BANDWIDTH = 10 Hz TO 15.7 kHz
10 mA
100 mA
IC = 1.0 mA
VT, TOTAL WIDEBAND NOISE VOLTAGE (nV)
NF, NOISE FIGURE (dB)
FIG .6 C apacitanc e
VR, REVERSE VOLTAGE (VOLTS)
5.0
7.0
10
20
3.0
FIG .7 High F requency C urrent Gain
IC, COLLECTOR CURRENT (m A)
FIG .8 DC C urrent Gain
IC, COLLECTOR CURRENT (mA)
FIG .9 C ollector S aturation R egion
IB, BASE CURRENT (mA)
2.0
200k
5.0
0.04
4.0
2.0
1.0
0.8
0.6
0.4
0.2
TJ = 25 C
C, CAPACITANCE (pF)
1.5
2.0
2.5
3.0
1.0
0.5
|hfe|, SMALL-SIGNAL CURRENT GAIN
hFE, DC CURRENT GAIN
VCE, COLLECTOR- EMITTER VOLTAGE (VOLTS)
0.1 0.2 0.4 1.0 2.0 4.0 10 20 40
Cibo
Cobo
0.5 1.0 2.0 0.5 10 20 50 100 200 500
VCE = 5.0 V
f = 100 MHz
TJ = 25 C
100k
70k
50k
30k
20k
10k
7.0k
5.0k
3.0k
2.0k
7.0 10 20 30 50 70 100 200 300 500
TJ = 125 C
25 C
- 55 C
VCE = 5.0 V
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000
TJ = 25 C
IC = 10 mA 50 mA 250 mA 500 mA
MMBTA13
MMBTA14
WEITRON
http://www.weitron.com.tw
FIG .12 T hermal R es pons e
t, TIME (ms)
1.0
r(t), TRANSIENT THERMAL
2.0 5.01.00.50.20.1
RESIST ANCE (NORMALIZED)
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
20 5010 200 500100 1.0k 2.0k 5.0k 10k
FIG .13 Active R egion S afe Operating Area
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
1.0k
0.4
700
500
300
200
100
70
50
30
20
10
0.6 1.0 2.0 4.0 6.0 10 20 40
IC, COLLECTOR CURRENT (mA)
TA = 25 C
D = 0.5
0.2
0.1 0.05 SINGLE PULSE
SINGLE PULSE
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
ZqJC(t) = r(t) w RqJCT J(pk)
- T C = P(pk)
ZqJC(t)
ZqJA(t)
= r(t) w RqJAT J(pk)
- T A = P(pk)
ZqJA(t)
1.0 ms
100 ms
TC = 25 C
1.0 s
Des ign Note: Us e of Trans ient Thermal R es is tance Data
FIGURE A
tP
PPPP
t1
1/f
DUTYCYCLE t1f t1
tP
PEAK PULSE POWER = PP
FIG .10. " On" Voltages
IC, COLLECTOR CURRENT (mA)
FIG .11 Temperature C oefficients
IC, COLLECTOR CURRENT (mA)
1.6
5.0
-1.0
V, VOLTAGE (VOLTS)
1.4
1.2
1.0
0.8
0.6
7.0 10 20 30 50 70 100 200 300 500
VBE(sat) @ I C/I
B = 1000
RV, TEMPERATURE COEFFICIENTS (mV/ C)
q
TJ = 25 C
VBE(on)
@ VCE = 5.0 V
VCE(sat)
@ IC/I
B = 1000
-2.0
-3.0
-4.0
-5.0
-6.0
5.0 7.0 10 20 30 50 70 100 200 300 500
25 C TO 125 C
-55 C TO 25 C
*R VC FOR VCE(sat)
VB FOR VBE
25 C TO 125 C
-55 C TO 25 C
*APPLIES FOR IC/I
B 3 hFE/3.0
q
MMBTA13
MMBTA14
WEITRON
http://www.weitron.com.tw
Dim
A
B
C
D
E
G
H
J
K
L
M
Min
0.35
1.19
2.10
0.85
0.46
1.70
2.70
0.01
0.89
0.30
0.076
Max
0.51
1.80
3.00
1.05
1.00
2.10
3.10
0.13
1.60
0.61
0.25
A
B
D
EG
M
L
H
J
TOP VIEW
K
C
SOT-23 Package Outline Dimensions Unit:mm