Darlington Amplifier
Transistors
NPN
MAXIMUM R ATINGS
R ating S ymbol Value Unit
C ollector- E mitter Voltage VC E S 30 Vdc
C ollector- B ase Voltage VC B O 30 Vdc
E mitter- Base Voltage VE B O 10 Vdc
C ollector C urrent - C ontinuous IC300 mAdc
THE R MAL C HAR A C TE R IS TIC S
C haracteris tic S ymbol Max Unit
Total Device Diss ipation F R ±5 B oard(1)
TA = 25 C
Derate above 25 C
PD225
1.8
mW
mW/ C
Thermal R esistance J unction to Ambient RJ A 556 C /W
Total Device Dissipation
Alumina S ubstrate,(2) TA = 25 C
Derate above 25 C
PD300
2.4
mW
mW/ C
Thermal R esistance J unction to Ambient RJ A 417 C /W
J unction and S torage Temperature TJ, Ts tg - 55 to +150 C
DE VIC E MA R K ING
MMB TA13 = 1M; MMB T A14LT1 = 1N
E L E C TR IC A L C HA R AC TE R IS T IC S (TA = 25 C unless otherwise noted)
C haracteris tic S ymbol Min Max Unit
OF F C HAR AC TE R IS TIC S
C ollector- E mitter Breakdown Voltage
(IC = 100 uAdc, VB E = 0) V(B R )C E S 30 -
-
-
Vdc
C ollector C utoff C urrent
(VC B = 30 V dc, IE = 0) IC B O 100 nAdc
E mitter C utoff C urrent
(VE B = 10 Vdc, IC = 0) IE B O 100 nAdc
1. FR - 5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
MMBTA13
MMBTA14
1
2
3
S OT -23
COLLECTOR 3
BASE
1
EMITTER 2
q
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