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Temperature in C
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Metelics
ATC
D. Labs
SURFACE MOUNT MIS CAPACITORS
IN SOD 323 PACKAGE
FEATURES
Dual insulating layer (Nitride-Oxide) for maximum
reliability
Low Loss, typically 0.04 dB in a 50 Ohm system
Very low temperature coefficient
TYPES
MC2 (50 Volt series)
DESCRIPTION
MIS (Metal-Insulating Layer-Silicon) Capacitors are
devices which have very high Q and small size for
use in microwave hybrid circuit applications. The
dielectric layer is composed of a thermally grown
silicon dioxide over which a thicker layer of silicon
nitride is deposited. This layer is carried out to the
edge of the chip. The end result is a capacitor having
a thin, high breakdown dielectric resulting in a high
capacitance per unit area. This dual insulating layer
exhibits a low temperature coefficient, very high
insulation resistance and much lower insertion loss
at microwave frequencies than porcelain
capacitors. These MIS devices (sometimes referred
to as MNOS) exhibit long term stability under bias
conditions at high temperatures.
APPLICATIONS
MIS Capacitors provide much improved perfor-
mance over other types of ceramic capacitors in
hybrid microwave circuits. They provide low loss in
supply decoupling circuits and GaAs FET transistor
source bypass (providing more gain per stage). They
can also be used as tuning elements in various filters
and matching networks. These capacitors provide
DC isolation and a tuning or bypass capacitor to
ground. Switch and comb generator performance
is significantly improved using MIS capacitors. There
are no resonance problems associated with MIS
devices.
TEMPERATURE DATA OF CAPACITORS
Silicon versus ceramic, 50 pF, 20 x 20 mil Chip
MIS CAPACITORS ELEC. SPECS. @ 25°C
Part VR CT @ 0 V
Number Min. Typ.
(V) (pF)
SMCAP1005 50 0.5
SMCAP1001 50 1.0
SMCAP1002 50 2.0
SMCAP1004 50 4.0
SMCAP1006 50 6.8
SMCAP1010 50 10.0
SMCAP1020 50 20.0
SMCAP5040 50 40.0
SMCAP5100 50 100.0