SS8050 — NPN Epitaxial Silicon Transistor
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
SS8050 Rev. B3 1
July 2010
SS8050
NPN Epitaxial Silicon Transistor
Features
• 2W Output Amplifier of Portable Radios in Class B Push-pull Operation.
• Complimentary to SS8550
• Collector Current: IC=1.5A
• Collector Power Dissipation: PC=2W (TC=25°C)
Absolute Maximum Ratings Ta = 25°C unless otherwise noted
Electrical Characteristics Ta = 25°C unless otherwise noted
hFE Classification
Symbol Parameter Value Units
VCBO Collector-Base Voltage 40 V
VCEO Collector-Emitter Voltage 25 V
VEBO Emitter-Base Voltage 6 V
ICCollector Current 1.5 A
PCCollector Power Dissipation 1 W
TJJunction Temperature 150 °C
TSTG Storage Temperature -65 ~ 150 °C
Symbol Parameter Conditions Min. Typ. Max. Units
BVCBO Collector-Base Breakdown Voltage IC=100µA, IE=0 40 V
BVCEO Collector-Emitter Breakdown Voltage IC=2mA, IB=0 25 V
BVEBO Emitter-Base Breakdown Voltage IE=100µA, IC=0 6 V
ICBO Collector Cut-off Current VCB=35V, IE=0 100 nA
IEBO Emitter Cut-off Current VEB=6V, IC=0 100 nA
hFE1
hFE2
hFE3
DC Current Gain VCE=1V, IC=5mA
VCE=1V, IC=100mA
VCE=1V, IC=800mA
45
85
40
300
VCE (sat) Collector-Emitter Saturation Voltage IC=800mA, IB=80mA 0.5 V
VBE (sat) Base-Emitter Saturation Voltage IC=800mA, IB=80mA 1.2 V
VBE (on) Base-Emitter On Voltage VCE=1V, IC=10mA 1 V
Cob Output Capacitance VCB=10V, IE=0, f=1MHz 9.0 pF
fTCurrent Gain Bandwidth Product VCE=10V, IC=50mA 100 MHz
Classification B C D
hFE2 85 ~ 160 120 ~ 200 160 ~ 300
1. Emitter 2. Base 3. Collector
TO-92
1
SS8050 — NPN Epitaxial Silicon Transistor
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
SS8050 Rev. B3 2
Typical Performance Characteristics
Figure 1. Static Characteristic Figure 2. DC current Gain
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product
0 0.4 0.8 1.2 1.6 2.0
0.1
0.2
0.3
0.4
0.5
IB = 3.0mA
IB = 2.5mA
IB = 2.0mA
IB = 1.5mA
IB = 1.0mA
IB = 0.5mA
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0.1 1 10 100 1000
1
10
100
1000
VCE = 1V
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
0.1 1 10 100 1000
10
100
1000
10000
IC = 10 IB
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE
IC[mA], COLLECTOR CURRENT
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.1
1
10
100
VCE = 1V
IC[mA], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
110100
1
10
100
1000
IE = 0
f = 1MHz
Cob [pF], CAPACITANCE
VCB [V], COLLECTOR-BASE VOLTAGE
1 10 100 400
1
10
100
1000
VCE = 10V
fT[MHz],
CURRENT GAIN BANDWIDTH PRODUCT
IC[mA], COLLECTOR CURRENT
SS8050 — NPN Epitaxial Silicon Transistor
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
SS8050 Rev. B3 3
Physical Dimensions
0.46 ±0.10
1.27TYP
(R2.29)
3.86MAX
[1.27 ±0.20]1.27TYP
[1.27 ±0.20]
3.60 ±0.20
14.47 ±0.40
1
.02 ±0.10
(0.25) 4.58 ±0.20
4.58 +0.25
–0.15
0.38 +0.1
0
–0.0
5
0.38 +0.10
–0.05
TO-92
Dimensions in Millimeters
© Fairchild Semiconductor Corporation www.fairchildsemi.com
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Rev. I49
