DS-XP032–114C–09/2016
Features
Optimized for eXecute-in-Place (XiP) operations
Reduces average latency for improving CPU performance
Enables 40% higher CPU performance than the basic Octal SPI protocol
133MHz Maximum Operating Frequency
Up to 266-Mbytes per second data transfer in Octal DTR mode
Concurrent Read and Write
Simultaneous execution of Read and Write operations
No additional delay executing Read commands issued during Program or Erase
Flexible boundary between Data Storage Area and Read While Write Area
Each area can have any size from 0 to 32 Mbits in 4 Mbit steps
Single 1.8V Supply
Serial Peripheral Interface (SPI) Compatible
Supports SPI Modes 0 and 3 (1-1-1)
Supports QPI Mode (4-4-4)
Supports Octal Mode (8-8-8)
Supports Dual Transfer Rate (DTR) for QPI and Octal modes
Flexible, Optimized Erase Architecture for Code + Data Storage Applications
Uniform 4-Kbyte Block Erase
Uniform 32-Kbyte Block Erase
Uniform 64-Kbyte Block Erase
Full Chip Erase
Hardware Controlled Locking of Protected Sectors via WP Pin
256-byte, One-Time Programmable (OTP) Security Register
128 bytes factory programmed with a unique identifier
128 bytes user programmable
Flexible Programming
Byte/Page Program (1 to 256 Bytes)
Single, Quad and Octal-Input Byte/Page Program (1 to 256 Bytes)
Write to Buffer and Write Buffer to Memory Commands
Active Status Interrupt when Program or Erase operation has finished
Power Optimized Program and Erase Control
Automatic Deep Power-Down or Ultra-Deep Power-Down upon the completion of Program
or Erase operation
Automatic Checking and Reporting of Program/Erase Failures
Software Controlled Reset
Hardware Reset Pin
JEDEC Standard Hardware Reset
JEDEC Standard Manufacturer and Device ID Read Methodology
Support for Serial Flash Discoverable Parameters (SFDP)
Low Power Dissipation
200nA Ultra-Deep Power-Down current (Typical)
ATXP032
266 Mbyte/s High-Performance 32Mbit
XiP System Accelerating Memory
ADVANCE INFORMATION
SUMMARY DATASHEET
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4µA Deep Power-Down Current (Typical)
20µA Standby current (Typical, for SPI Mode)
35µA Standby current (Typical, for QPI and Octal mode)
1.0mA + 30µa/MHz Active Read Current (KGD, Typical, for SPI Mode@ 1pF load)
1.0mA + 65µa/MHz Active Read Current (KGD, Typical, for QPI Single Transfer Rate @ 1pF load)
1.0mA + 91µa/MHz Active Read Current (KGD, Typical, for QPI Dual Transfer Rate @ 1pF load)
1.0mA + 142µa/MHz Active Read Current (KGD, Typical, for Octal Mode Dual Transfer Rate @ 1pF load)
Programmable I/O drive strength
Endurance: 100,000 Program/Erase Cycles
Data Retention: 20 Years
Complies with Full Industrial Temperature Range
-40°C - 85°C for packaged parts
-40°C - 105°C for Known Good Die [KGD]
Industry Standard Green (Pb/Halide-free/RoHS Compliant) Package Options
24-ball BGA
WLCSP
Known Good Die [KGD]
1. Description
The Adesto® ATXP032 is a high speed serial interface Flash memory device designed for use in a wide variety of high-volume
consumer based applications in which program code is executed directly from Flash memory (XiP) or shadowed from Flash
memory into embedded or external RAM for execution. The ATXP032 allows writing to the flash array at the same time as code is
being fetched from a different part of the array. This enables firmware updates and data logging without the need for additional
data storage devices in the system.
The ATXP032 is specifically optimized for eXecute-in-Place (XiP) operations. While being backwards compatible with existing XiP
protocols, the ATXP032 includes additional improvements that reduce significantly the latency of fetching the next cache line(s).
The improved command protocol may enable more than 40% faster execution than the standard XiP protocol running at the same
clock frequency.
In addition to standard SPI (1-1-1) Operation, the ATXP032 supports QPI Mode (4-4-4) and Octal Mode (8-8-8).
For even higher data throughput, the ATXP032 Supports Dual Transfer Rate (DTR) for QPI and Octal modes.
For faster transfer of data from the device, the ATXP032 provides a Data Strobe (DS) output signal. DS serves as a source-
synchronous clock to the output data. This enables much faster clock rates for both DTR and STR modes than can be achieved
by using SCK as the clock signal for incoming data.
The ATXP032 is optimized for low power system operation. In addition to the inherently low power consumption of the device it
supports programmable strength IO drivers that can be matched to the required operating capacitive load. The ATXP032
supports 3 low-power operation modes and an option to automatically switch to low power mode upon completion of a program or
erase operation
The erase block sizes of the ATXP032 have been optimized to meet the needs of today's code and data storage applications. By
optimizing the size of the erase blocks, the memory space can be used much more efficiently. Because certain code modules and
data storage segments must reside by themselves in their own erase regions, the wasted and unused memory space that occurs
with large sectored and large block erase Flash memory devices can be greatly reduced. This increased memory space efficiency
allows additional code routines and data storage segments to be added while still maintaining the same overall device density.
The device also contains a specialized OTP (One-Time Programmable) Security Register that can be used for purposes such as
unique device serialization, system-level Electronic Serial Number (ESN) storage and locked key storage.
Specifically designed for use in many different systems, the ATXP032 supports read, program, and erase operations with a single
1.8V supply voltage. No separate voltage is required for programming and erasing.
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2. Pin Descriptions and Pinouts
All I/O pins and DS will be in tri-state mode when not actively driven. To reduce power consumption, it is recommended to not
leave pins floating, but have internal pull downs in the host controller that will ensure that all pins have a valid logic level at all
times.
EPE
Table 2-1. Pin Descriptions
Symbol Name and Function
Asserted
State Type
CS
CHIP SELECT: Asserting the CS pin selects the device. When the CS pin is deasserted, the
device will be deselected and normally be placed in standby mode (not Deep Power-Down
mode), and the output pins will be in a high-impedance state. When the device is deselected,
data will not be accepted on the SI pin.
A high-to-low transition on the CS pin is required to start an operation, and a low-to-high
transition is required to end an operation. When ending an internally self-timed operation
such as a program or erase cycle, the device will not enter the standby mode until the
completion of the operation.
Low Input
SCK
SERIAL CLOCK: This pin is used to provide a clock to the device and is used to control the
flow of data to and from the device.
In Single Transfer Rate modes, command, address, and input data present on the I/O pins
are always latched in on the rising edge of SCK, while output data on the I/O pins is always
clocked out on the falling edge of SCK. In the Double Transfer Rate Modes, address and
input data present on the I/O pins data are latched on both clock edges. For more accurate
operation at high speeds, SCK is returned as DS synchronous to output data.
-Input
SI (I/O0)
SERIAL INPUT: In SPI Mode, the SI pin is used to shift data into the device. The SI pin is
used for all data input including command and address sequences.
In Single Transfer Rate modes, command, address, and input data present on the SI pin is
always latched in on the rising edge of SCK. In the Double Transfer Rate Modes, address
and input data present on the SI pin is latched on both edges of SCK.
In QPI and Octal modes, the SI Pin becomes an I/O pin (I/O0) in conjunction with other pins.
In Single Transfer Rate modes this allows four or eight bits of command, address, or input
data on I/O3-0 or I/O7-0 to be clocked in on the rising edge of SCK, or four or eight bits clocked
out on the falling edge of SCK. In Double Transfer Rate modes this allows four or eight bits of
address or input data on I/O3-0 or I/O7-0 to be clocked in on every edge of SCK, or four or
eight bits clocked out on every edge of SCK. Commands are clocked on the rising edge of
SCK, requiring a whole clock cycle also in the Double Transfer Rate modes.
To maintain consistency with the SPI nomenclature, the SI (I/O0) pin will be referenced as the
SI pin unless specifically addressing the Multi-I/O modes in which case it will be referenced
as I/O0.
Data present on the SI pin will be ignored whenever the device is deselected (CS is
deasserted).
-Input/
Output
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SO (I/O1)
SERIAL OUTPUT: The SO pin is used to shift data out from the device.
In the Single Transfer Rate modes, Data on the SO pin is always clocked out on the falling
edge of SCK. In the Double Data Rate modes, Data on the SO pin is clocked out on both
edges of SCK
In QPI and Octal modes, the SO Pin becomes an I/O pin (I/O1) in conjunction with other pins.
In Single Transfer Rate modes this allows four or eight bits of command, address, or input
data on I/O3-0 or I/O7-0 to be clocked in on the rising edge of SCK, or four or eight bits clocked
out on the falling edge of SCK. In Double Transfer Rate modes this allows four or eight bits of
address or input data on I/O3-0 or I/O7-0 to be clocked in on every edge of SCK, or four or
eight bits clocked out on every edge of SCK. Commands are clocked on the rising edge of
SCK, requiring a whole clock cycle also in the Double Transfer Rate modes.
To maintain consistency with the SPI nomenclature, the SO (I/O1) pin will be referenced as
the SO pin unless specifically addressing the Multi-I/O modes in which case it is referenced
as I/O1.
The SO pin will be in a high-impedance state whenever the device is deselected (CS is
deasserted).
-Input/
Output
WP (I/O2)
WRITE PROTECT: The WP pin controls the hardware locking feature of the device. Please
refer to “Protection Commands and Features” on page 45 for more details on protection
features and the WP pin.
The WP pin is internally pulled-high and may be left floating if hardware controlled protection
will not be used. However, it is recommended that the WP pin also be externally connected
to VCC whenever possible.
In QPI and Octal modes, I/O2 is used together with I/O3-0 or I/O7-0 as a bidirectional I/O pin.
pin. In these modes, the I/O2 pin will be in a high-impedance state whenever the device is
deselected (CS is deasserted).
Low Input/
Output
HOLD (I/O3)
HOLD: The HOLD pin is used to temporarily pause serial communication without deselecting
or resetting the device. While the HOLD pin is asserted, transitions on the SCK pin and data
on the SI pin will be ignored, and the SO pin will be in a high-impedance state.
The CS pin must be asserted, and the SCK pin must be in the low state in order for a
Hold condition to start. A Hold condition pauses serial communication only and does not
have an effect on internally self-timed operations such as a program or erase cycle.
Please refer to “Hold” on page 94 for additional details on the Hold operation.The HOLD
pin is internally pulled-high and may be left floating if the Hold function will not be used.
However, it is recommended that the HOLD pin also be externally connected to VCC
whenever possible.
In QPI and Octal modes, I/O3 is used together with I/O3-0 or I/O7-0 as a bidirectional I/O pin. In
these modes, the I/O3 pin will be in a high-impedance state whenever the device is
deselected (CS is deasserted).
Low Input/
Output
Table 2-1. Pin Descriptions (Continued)
Symbol Name and Function
Asserted
State Type
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DS
DATA STROBE: DS is the return of the SCK clock, synchronized to the return data. It is
available in all modes, and will make it easier to achieve high clock speeds in a system. DS
is required to achieve maximum clock speeds.
DS is in a high-impedance state when the device is receiving commands, address, or data,
and will be driven low prior to data output from the device.
In Single Transfer Rate mode, DS is driven low in the first half of the data output cycle, and
high in the second half. In Dual Transfer Rate mode, DS changes value at the edge of each
data bit. DS will basically be the same value as SCK, but with a delay.
Achieving high clock rates in systems without DS will require a short signal path between the
SPI master and the memory device, and careful layout of all signal lines to minimize signal
delays.
Data Strobe is driven tRPRE prior to the first Data Strobe rising edge and tRPST after the
last falling edge.
-Output
I/O7, I/O6,
I/O5, I/O4
SERIAL I/O: In Octal Mode, I/O7-4 are used together with I/O3-0 as bidirectional I/O pins.In
these modes, the I/O7-4 pins (as well as the I/O3-0 pins) will be in a high-impedance state
whenever the device is deselected (CS is deasserted).
In other modes, the I/O7-4 pins are always in a high-impedance state.
These I/O lines are not available in 8-pin packages.
-Input/
Output
VCC,VCC I/O
DEVICE POWER SUPPLY: The VCC and VCC I/O pins are used to supply the source voltage
to the device. The VCC and VCC I/O pins have to be connected to the same supply voltage.
Each VCC and VCC I/O pin requires a separate decoupling capacitor to GND. 1 µF ceramic
capacitors are recommended.
Operations at invalid VCC voltages may produce spurious results and should not be
attempted.
-Power
GND,
GND I/O
GROUND: The ground reference for the power supply. GND and GND I/O should be
connected to the system ground. -Power
RESET
RESET: A low state on the reset pin (RESET) will terminate the operation in progress and
reset the internal state machine to an idle state. The device will remain in the reset condition
as long as a low level is present on the RESET pin. Normal operation can resume once the
RESET pin is brought back to a high level. See Section 12.11 for details about the device
operation when RESET pin is engaged. The device incorporates an internal power-on reset
circuit, so there are no restrictions on the RESET pin during power-on sequences.
If this pin and feature is not utilized, then it is recommended that the RESET pin is driven
high externally.
The RESET pin is not required for operation of the device. The JEDEC Standard Hardware
Reset function described in Section 12.10 provides the same functions without requiring a
dedicated pin. The RESET pin is included for compatibility with older systems. For new
designs, the JEDEC Standard Hardware Reset is recommended.
The RESET pin may not be included in all package options.
Low Input
Table 2-1. Pin Descriptions (Continued)
Symbol Name and Function
Asserted
State Type
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DS-XP032–114C–09/2016
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Figure 2-1. 24-pad 6x8 mm BGA Pinout Figure 2-2. WLCSP Pinout
Contact Adesto for pinout
Figure 2-3. QFN Pinout
Possible future package offering
Contact Adesto for pinout and availability09/201609/2016
Figure 2-4. 19-pad 6 x 5 mm BGA Pinout
Possible future package offering
Contact Adesto for pinout and availability
A
B
C
D
E
12345
NC
GND I/O
V
CC
I/O
I/O7
NC
SCK
CS
I/O1(SO)
I/O6
NC
GND
DS
I/O0(SI)
I/O5
RESET
V
CC
I/O2(WP)
I/O3(HOLD)
V
CC
I/O
NC
NC
NC
I/O4
GND I/O
TOP VIEW
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3. Block Diagram
Figure 3-1. Block Diagram
4. Memory Array
To provide the greatest flexibility, the memory array of the ATXP032 memory array is divided into three levels of granularity
comprising of sectors, blocks, and pages. The size of the erase blocks is optimized for both code and data storage applications,
allowing both code and data segments to reside in their own erase regions. Figure 4-1, Memory Architecture Diagram, illustrates
the breakdown of each level and details the number of pages per sector and block. Program operations to the memory array can
be done at the full page level or at the byte level (a variable number of bytes). The erase operations can be performed at the chip
level or at 3 different block size levels.
4.1 Read-While-Write memory banks
For Read-While-Write operations, the memory array is divided into 2 banks of 0-32 Mbit each as shown in Figure 4-2, Read-
While-Write Memory Banks. While an Erase or Program operation is taking place in one bank, a Read operation can take place in
the other.
See Section 7.3, Read-While-Write, for more details about using Read-While-Write operations.
FLASH
MEMORY
ARRAY
Y- GATING
CS
SCK
SO (I/O
1
)
SI (I/O
0
)
Y-DECODER
ADDRESS LATCH
X-DECODER
I/O BUFFERS
AND LATCHES
CONTROL AND
PROTECTION LOGIC
SRAM
DATA BUFFER
WP(I/O
2
)
INTERFACE
CONTROL
AND
LOGIC
HOLD(I/O
3
)
DS
I/O
4
I/O
5
I/O
6
I/O
7
RESET
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Figure 4-1. Memory Architecture Diagram
Figure 4-2. Read-While-Write Memory Banks
Sector 0 = 1024 pages
262,144 bytes
Block = 4096 bytes
16 Pages
Sector 0
Page = 256 bytes
Page 0
Page 1
Page 14
Page 15
Page 16
Page 17
Page 16,382
Page 16,383
Block 0
Page 30
Page 31
Page 32
Page 33
Page 34
Block 1
Sector Architecture Block Architecture Page Architecture
Block 0
Block 1
Block 14
Block 63
Block 64
Block 65
Block 1022
Block 1023
Block 126
Block 127
Block 960
Block 961
Sector 1Sector 15
Sector 15 = 1024 pages
262,144 bytes
Sector 1 = 1024 pages
262,144 bytes
Sector 14 = 1024 pages
262,144 bytes
Sector 2 = 1024 pages
262,144 bytes
One Memory Bank
16,384 pages
4,194,304 bytes
0 - 3FFFFF
Read-While-Write
Not Supported
Suspend - Resume
Supported
RWW Config = 000
Bank 0
2,048 pages
524,288 bytes
0 - 07FFFF
Bank 1
14,336 pages
3,670,016 bytes
080000 - 3FFFFF
001
Bank 0
14,336 pages
3,670,016 bytes
0 - 37FFFF
Bank 1
2,048 pages
524,288 bytes
380000 - 3FFFFF
111
Bank 0
12,288 pages
3,145,728 bytes
0 - 2FFFFF
Bank 1
4,096 pages
1,048,576 bytes
300000 - 3FFFFF
110
Bank 0
10,240 pages
2,621,440 bytes
0 - 27FFFF
Bank 1
6,144 pages
1,572,864 bytes
280000 - 3FFFFF
101
Bank 0
8,192 pages
2,097,152 bytes
0 - 1FFFFF
Bank 1
8,192 pages
2,097,152 bytes
200000 - 3FFFFF
100
Bank 0
6,144 pages
1,572,864 bytes
0 - 17FFFF
Bank 1
10,240 pages
2,621,440 bytes
180000 - 3FFFFF
011
Bank 0
4,096 pages
1,048,576 bytes
0 - 0FFFFF
Bank 1
12,288 pages
3,145,728 bytes
100000 - 3FFFFF
010
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5. Ordering Information
5.1 Ordering Code Detail
Ordering Code (1)
1. The shipping carrier option code is not marked on the device.
Package Lead Finish Operating Voltage
Max. Freq.
(MHz) Operation Range
ATXP032-CCUE-Y
24CBGA
SnAgCu
1.65V to 1.95V 133 Industrial
(-40°C to +85°C)
ATXP032-CCUE-T
ATXP032-UUE-T (2))
2. Contact Adesto for mechanical drawing or Die Sales information.
WLCSP
ATXP032-DWF(2) DWF N/A
Package Type
24CBGA 24C2, 24-ball (5 x 5 Array), 6 x 8 x 1.0mm Body, 1.0 mm Ball Pitch Chip-scale Ball Grid Array Package (CBGA)
WLCSP Wafer Level CSP / die Ball Grid Array (dBGA)
DWF Die in Wafer Form
ATX 03 U2–P
Designator
Product Family
XP = EcoXiP
Device Density
032 = 32-megabit
Package Option
CC = 24-ball 6 x 8 x 1.0 BGA
DWF = Die in Wafer Form
U = WLCSP
Device Grade
H = Green, NiPdAu lead nish, industrial
temperature range (-40°C to +85°C)
U = Green, Matte Sn or Sn alloy, industrial
temperature range (-40°C to +85°C)
Blank = Wafer
Shipping Carrier Option
T = Tape and reel
Y = Tray
Blank = Wafer
Operating Voltage
E = 1.65V to 1.95V
UTE–
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6. Packaging Information
Figure 6-1. 24C2 - 24-ball CBGA
TITLE DRAWING NO. REV.
Package Drawing Contact :
contact@adestotech.com B
24C2
06/2016
24C2, 24-ball (5 x 5 Array), 6 x 8 x 1.0 mm Body, 1.0 mm Ball
Pitch Chip-scale Ball Grid Array Package (CBGA)
Dimensions in Millimeters and (Inches).
Controlling dimension: Millimeters.
A
B
C
D
E
54321
4.0 (0.157)
1.00 (0.039) REF
0.35 (0.014)
DIA BALL TYP
2.00 (0.079) REF
4.0 (0.157)
8.10(0.319)
7.90(0.311)
1.00 (0.0394) MAX
0.22 (0.0087)MIN
6.10(0.240)
5.90(0.232)
1.00 (0.0394) BSC
NON-ACCUMULATIVE
A1 ID
1.00 (0.0394) BSC
NON-ACCUMULATIVE
TOP VIEW
SIDE VIEW
BOTTOM VIEW
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© 2016 Adesto Technologies. All rights reserved. / Rev.: DS-XP032–114C-09/2016
Disclaimer: Adesto Technologies Corporation makes no warranty for the use of its products, other than those expressly contained in the Company's standard warranty which is detailed in Adesto's Terms
and Conditions located on the Company's web site. The Company assumes no responsibility for any errors which may appear in this document, reserves the right to change devices or specifications
detailed herein at any time without notice, and does not make any commitment to update the information contained herein. No licenses to patents or other intellectual property of Adesto are granted by the
Company in connection with the sale of Adesto products, expressly or by implication. Adesto's products are not authorized for use as critical components in life support devices or systems.
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Santa Clara, CA 95054
Phone: (+1) 408.400.0578
Email: contact@adestotech.com