NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG
1Gb DDR2 SDRAM
1
REV 1.8 CONSUMER DRAM
Nov / 2009 © NANYA TECHNOLOGY CORP. All rights reserved
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
Feature
CAS Latency Frequency
Speed Sorts
(CL-tRCD-tRP)
DDR2-533
-37B/-37BI
4-4-4
DDR2-667
-3C/-3CI
5-5-5
DDR2-800
DDR2-1066
Units
-AD/-ADI
6-6-6
-AC/-ACI
5-5-5
-BE
7-7-7
-BD
6-6-6
Parameter
min
max
min
max
min
max
min
max
min
max
min
max
Max. Clock
125
266
125
333
125
400
125
400
125
533
125
533
MHz
tRCD
15
-
15
-
15
-
12.5
-
13.125
-
11.25
-
ns
tRP
15
-
15
-
15
-
12.5
-
13.125
-
11.25
-
ns
tRC
60
-
60
-
60
-
57.5
-
58.125
-
56.25
-
ns
tRAS
45
70K
45
70K
45
70K
45
70K
45
70K
45
70K
ns
tCK(Avg.)@CL3
5
8
5
8
5
8
5
8
5
8
5
8
ns
tCK(Avg.)@CL4
3.75
8
3.75
8
3.75
8
3.75
8
3.75
8
3.75
8
ns
tCK(Avg.)@CL5
-
-
3
8
3
8
2.5
8
2.5
8
2.5
8
ns
tCK(Avg.)@CL6
-
-
-
-
2.5
8
-
-
2.5
8
1.875
8
ns
tCK(Avg.)@CL7
-
-
-
-
-
-
-
-
1.875
8
1.875
8
ns
1.8V ± 0.1V Power Supply Voltage
8 internal memory banks
Programmable CAS Latency:
3, 4, 5 (DDR2-37B/-3C/-AC)
4, 5, 6 (-AD)
6 (-BD) and 7 (-BE)
Programmable Additive Latency: 0, 1, 2, 3, 4 5 and 6
Write Latency = Read Latency -1
Programmable Burst Length:
4 and 8 Programmable Sequential / Interleave Burst
OCD (Off-Chip Driver Impedance Adjustment)
ODT (On-Die Termination)
4 bit prefetch architecture
Data-Strobes: Bidirectional, Differential
Support Industrial grade temperature -40℃~95℃
Operating t Temperature (-37BI/-3CI/-ADI/-ACI)
1KB page size for x4 and x8
2KB page size for x16
Strong and Weak Strength Data-Output Driver
Auto-Refresh and Self-Refresh
Power Saving Power-Down modes
7.8 µs max. Average Periodic Refresh Interval
RoHS Compliance
Packages:
60-Ball BGA for x4 / x8 components
84-Ball BGA for x16 components
NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG
1Gb DDR2 SDRAM
2
REV 1.8 CONSUMER DRAM
Nov / 2009 © NANYA TECHNOLOGY CORP. All rights reserved
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
Description
The 1giga bit (1Gb) Double-Data-Rate-2 (DDR2) DRAMs is a high-speed CMOS Double Data Rate 2 SDRAM
containing 1,073,741,824 bits. It is internally configured as an octal-bank DRAM.
The 1Gb chip is organized as 32Mbit x 4 I/O x 8 bank, 16Mbit x 8 I/O x 8 bank or 8Mbit x 16 I/O x 8 bank device. These
synchronous devices achieve high speed double-data-rate transfer rates of up to 800 Mb/sec/pin for general appli-
cations.
The chip is designed to comply with all key DDR2 DRAM key features: (1) posted CAS with additive latency, (2) write
latency = read latency -1, (3) normal and weak strength data-output driver, (4) variable data-output impedance
adjustment and (5) an ODT (On-Die Termination) function.
All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are
latched at the cross point of differential clocks (CK rising and falling). All I/Os are synchronized with a single ended
DQS or differential DQS pair in a source synchronous fashion. A 14 bit address bus for x4/x8 organized components
and A 13 bit address bus for x16 component is used to convey row, column, and bank address devices.
These devices operate with a single 1.8V ± 0.1V power supply and are available in BGA packages.
NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG
1Gb DDR2 SDRAM
3
REV 1.8 CONSUMER DRAM
Nov / 2009 © NANYA TECHNOLOGY CORP. All rights reserved
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
Pin Configuration – 60 balls BGA Package (x4)
< TOP View>
See the balls through the package
A
B
C
D
E
F
G
x 4
1
VDD
NC
NC
VSSQ
DQ1
VSSQ
VREF
CKE
A10/AP
2
VSS
DM
VDDQ
DQ3
VSS
WE
BA1
3 7 8 9
A3
VDDQ
VDD
DQS
VSSQ
DQ0
VSSQ
CK
CK
CS
VSSQ
DQS
VDDQ
VSSDL
RAS
CAS
VDD
H
J
K
L
NC
VDDQ
VDDL
A7
A12VDD
BA0
A1
A5
A9
NC NC
A11
A6
A2
DQ2
A13
A8
A4
A0
NC
VDDQ
NC
VSS
BA2
VSS
ODT
NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG
1Gb DDR2 SDRAM
4
REV 1.8 CONSUMER DRAM
Nov / 2009 © NANYA TECHNOLOGY CORP. All rights reserved
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
Pin Configuration – 60 balls BGA Package (x8)
< TOP View>
See the balls through the package
A
B
C
D
E
F
G
x 8
1
VDD
DQ4
NU,/RDQS
VSSQ
DQ1
VSSQ
VREF
CKE
A10/AP
2
VSS
DM/RDQS
VDDQ
DQ3
VSS
WE
BA1
3 7 8 9
A3
VDDQ
VDD
DQS
VSSQ
DQ0
VSSQ
CK
CK
CS
VSSQ
DQS
VDDQ
VSSDL
RAS
CAS
VDD
H
J
K
L
DQ6
VDDQ
VDDL
A7
A12VDD
BA0
A1
A5
A9
NC NC
A11
A6
A2
DQ2
A13
A8
A4
A0
DQ7
VDDQ
DQ5
VSS
BA2
VSS
ODT
NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG
1Gb DDR2 SDRAM
5
REV 1.8 CONSUMER DRAM
Nov / 2009 © NANYA TECHNOLOGY CORP. All rights reserved
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
Pin Configuration – 84 balls BGA Package (x16)
< TOP View>
See the balls through the package
A
B
C
D
E
F
G
H
J
K
L
x 16
1
VDD
DQ14
VDDQ
DQ12
VDD
DQ4
NC
VSSQ
DQ9
VSSQ
NC
VSSQ
DQ1
VSSQ
VREF
CKE
A10/ AP
2
VSS
UDM
VDDQ
DQ11
VSS
LDM
VDDQ
DQ3
VSS
WE
BA 1
3 7 8 9
A3
VDDQ
DQ15
VDDQ
DQ13
VDDQ
VDD
UDQS
VSSQ
DQ8
VSSQ
LDQS
VSSQ
DQ0
VSSQ
C
K
CK
CS
VSSQ
UDQS
VDDQ
DQ10
VSSQ
LDQS
VDDQ
VSSDL
RAS
CAS
VDD
M
N
P
R
DQ6
VDDQ
VDDL
A7
A12VDD
BA0
A1
A5
A9
NC NC
A11
A6
A2
DQ2
NC
A8
A4
A0
DQ7
VDDQ
DQ5
VSS
BA2
VSS
ODT
NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG
1Gb DDR2 SDRAM
6
REV 1.8 CONSUMER DRAM
Nov / 2009 © NANYA TECHNOLOGY CORP. All rights reserved
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
Input / Output Functional Description
Symbol
Type
Function
CK,
Input
Clock: CK and are differential clock inputs. All address and control input signals are sampled
on the crossing of the positive edge of CK and negative edge of . Output (read) data is
referenced to the crossings of CK and (both directions of crossing).
CKE
Input
Clock Enable: CKE high activates, and CKE low deactivates, internal clock signals and device
input buffers and output drivers. Taking CKE low provides Precharge Power-Down and
Self-Refresh operation (all banks idle), or Active Power-Down (row Active in any bank). CKE is
synchronous for power down entry and exit and for Self-Refresh entry. CKE is asynchronous for
Self-Refresh exit. After VREF has become stable during the power on and initialization sequence, it
must be maintained for proper operation of the CKE receiver. For proper self-refresh entry and
exit, VREF must maintain to this input. CKE must be maintained high throughout read and write
accesses. Input buffers, excluding CK, , ODT and CKE are disabled during Power Down. Input
buffers, excluding CKE, are disabled during Self-Refresh.
Input
Chip Select: All commands are masked when is registered high. provides for external rank
selection on systems with multiple memory ranks. is considered part of the command code.
, ,
Input
Command Inputs: , and (along with ) define the command being entered.
DM, LDM, UDM
Input
Input Data Mask: DM is an input mask signal for write data. Input data is masked when DM is
sampled high coincident with that input data during a Write access. DM is sampled on both edges
of DQS. Although DM pins are input only, the DM loading matches the DQ and DQS loading. For
x8 device, the function of DM or RDQS / is enabled by EMRS command.
BA0 - BA2
Input
Bank Address Inputs: BA0, BA1, and BA2 define to which bank an Active, Read, Write or
Precharge command is being applied. Bank address also determines if the mode register or
extended mode register is to be accessed during a MRS or EMRS cycle.
A0 – A13
Input
Address Inputs: Provides the row address for Activate commands and the column address and
Auto Precharge or Read/Write commands to select one location out of the memory array in the
respective bank. A10 is sampled during a Precharge command to determine whether the
precharge applies to one bank (A10=low) or all banks (A10=high). If only one bank is to be
precharged, the bank is selected by BA0-BA2. The address inputs also provide the op-code during
Mode Register Set commands.A13 Row address use on x8 components only.
DQ
Input/output
Data Inputs/Output: Bi-directional data bus.
DQS, ()
LDQS, (),
UDQS,()
Input/output
Data Strobe: output with read data, input with write data. Edge aligned with read data, centered
with write data. For the x16, LDQS corresponds to the data on DQ0 - DQ7; UDQS corresponds to
the data on DQ8-DQ15. The data strobes DQS, LDQS, UDQS, and RDQS may be used in single
ended mode or paired with the optional complementary signals , , to provide
differential pair signaling to the system during both reads and writes. An EMRS(1) control bit
enables or disables the complementary data strobe signals.
NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG
1Gb DDR2 SDRAM
7
REV 1.8 CONSUMER DRAM
Nov / 2009 © NANYA TECHNOLOGY CORP. All rights reserved
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
Symbol
Type
Function
RDQS, ()
Input/output
Read Data Strobe: For x8 components a RDQS and pair can be enabled via EMRS(1) for
real timing. RDQS and is not support x16 components. RDQS and are edge-aligned
with real data. If enable RDQS and then DM function will be disabled.
ODT
Input
On Die Termination: ODT (registered HIGH) enables termination resistance internal to the DDR2
SDRAM. When enabled, ODT is applied to each DQ, DQS, , RDQS, , and DM signal for
x8 configuration. For x16 configuration ODT is applied to each DQ, UDQS, , LDQS, ,
UDM and LDM signal. The ODT pin will be ignored if the EMRS (1) is programmed to disable ODT.
NC
No Connect: No internal electrical connection is present.
VDDQ
Supply
DQ Power Supply: 1.8V ± 0.1V
VSSQ
Supply
DQ Ground
VDDL
Supply
DLL Power Supply: 1.8V ± 0.1V
VSSDL
Supply
DLL Ground
VDD
Supply
Power Supply: 1.8V ± 0.1V
VSS
Supply
Ground
VREF
Supply
SSTL_1.8 reference voltage
NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG
1Gb DDR2 SDRAM
8
REV 1.8 CONSUMER DRAM
Nov / 2009 © NANYA TECHNOLOGY CORP. All rights reserved
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
Ordering Information
Green
Standard Grade
Organization
Part Number
Package
Speed
Clock (Mbps)
CL-TRCD-TRP
256M x 4
NT5TU256M4DE – 37B
60-Ball BGA
266
4-4-4
NT5TU256M4DE – 3C
333
5-5-5
NT5TU256M4DE – AD
400
6-6-6
NT5TU256M4DE – AC
400
5-5-5
128M x8
NT5TU128M8DE – 37B
266
4-4-4
NT5TU128M8DE – 3C
333
5-5-5
NT5TU128M8DE – AD
400
6-6-6
NT5TU128M8DE – AC
400
5-5-5
NT5TU128M8DE – BE
533
7-7-7
NT5TU128M8DE – BD
533
6-6-6
64M x 16
NT5TU64M16DG – 37B
84-Ball BGA
266
4-4-4
NT5TU64M16DG – 3C
333
5-5-5
NT5TU64M16DG – AD
400
6-6-6
NT5TU64M16DG – AC
400
5-5-5
NT5TU64M16DG – BE
533
7-7-7
NT5TU64M16DG – BD
533
6-6-6
Industrial Grade
Organization
Part Number
Package
Speed
Clock (Mbps)
Clock (Mbps)
128M x 8
NT5TU128M8DE – 37BI
60-Ball BGA
266
4-4-4
NT5TU128M8DE – 3CI
333
5-5-5
NT5TU128M8DE – ADI
400
6-6-6
NT5TU128M8DE – ACI
400
5-5-5
64M x 16
NT5TU64M16DG – 37BI
84-Ball BGA
266
4-4-4
NT5TU64M16DG – 3CI
333
5-5-5
NT5TU64M16DG – ADI
400
6-6-6
NT5TU64M16DG – ACI
400
5-5-5
NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG
1Gb DDR2 SDRAM
9
REV 1.8 CONSUMER DRAM
Nov / 2009 © NANYA TECHNOLOGY CORP. All rights reserved
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
Block Diagram (256Mb x 4)
Column
Decoder
Column
Decoder
Column
Decoder
Column
Decoder
Column
Decoder
Column
Decoder
Column
Decoder
Column
Decoder
I/O Gating
DM Mask Logic
Bank 7
Row-Address
Latch &
Decoder
Bank 6
Row-Address
Latch &
Decoder
Bank 5
Row-Address
Latch &
Decoder
Bank 4
Row-Address
Latch &
Decoder
Bank 3
Row-Address
Latch &
Decoder
Bank 2
Row-Address
Latch &
Decoder
Bank 1
Row-Address
Latch &
Decoder
Command
Decode
Mode
Registers
Control Logic
CKE
CK
CK
CS
WE
CAS
RAS
Address Register
17
Row-Address MUX
14
A0 – A13,
BA0 – BA2
11
17
14
Refresh Counter
Column-Address
Counter/Latch
2
Bank Control
Logic
8
Bank 0
Row-Address
Latch &
Decoder
Bank 7
Memory Array
(16384 x512 x16)
Sense Amplifier
Bank 6
Memory Array
(16384 x512 x16)
Sense Amplifier
Bank 5
Memory Array
(16384 x512 x16)
Sense Amplifier
Bank 4
Memory Array
(16384 x512 x16)
Sense Amplifier
Bank 3
Memory Array
(16384 x512 x16)
Sense Amplifier
Bank 2
Memory Array
(16384 x512 x16)
Sense Amplifier
Bank 1
Memory Array
(16384 x512 x16)
Sense Amplifier
Bank 0
Memory Array
(16384 x512 x16)
Sense Amplifier
16384
8192
512 (x16)
8
9
2
16
16
16
Read Latch
Write
FIFO
&
Drivers
4
4
4
4
MUX
COL0,1
Drivers
DQS
Generator
4
2
Data
DQS,
DQS
1
1
1
1
4
4
4
4
1
1
1
1
4
4
4
4
4
Mask
16
Data
COL0,1
CK,
CK
1
4
Receivers
ODT Control
DM
DQS,
DQS
ODT
DLL
CK, CK
14
3
COL0,1
Notes:
1. This Functional Block Diagram is intended to facilitate user understanding of the operation of the device; it does
not represent an actual circuit implementation.
2. DM is an unidirectional signal (input only), but it is internally loaded to match the load of the bidirectional DQ
and DQS signals.
Input
Register
DQ0-DQ3
2
NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG
1Gb DDR2 SDRAM
10
REV 1.8 CONSUMER DRAM
Nov / 2009 © NANYA TECHNOLOGY CORP. All rights reserved
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
Block Diagram (128Mb x 8)
Column
Decoder
Column
Decoder
Column
Decoder
Column
Decoder
Column
Decoder
Column
Decoder
Column
Decoder
Column
Decoder
I/O Gating
DM Mask Logic
Bank 7
Row-Address
Latch &
Decoder
Bank 6
Row-Address
Latch &
Decoder
Bank 5
Row-Address
Latch &
Decoder
Bank 4
Row-Address
Latch &
Decoder
Bank 3
Row-Address
Latch &
Decoder
Bank 2
Row-Address
Latch &
Decoder
Bank 1
Row-Address
Latch &
Decoder
Command
Decode
Mode
Registers
Control Logic
CKE
CK
CK
CS
WE
CAS
RAS
Address Register
17
Row-Address MUX
14
A0 – A13,
BA0 – BA2
10
17
14
Refresh Counter
Column-Address
Counter/Latch
2
Bank Control
Logic
8
Bank 0
Row-Address
Latch &
Decoder
Bank 7
Memory Array
(16384 x512 x16)
Sense Amplifier
Bank 6
Memory Array
(16384 x512 x16)
Sense Amplifier
Bank 5
Memory Array
(16384 x512 x16)
Sense Amplifier
Bank 4
Memory Array
(16384 x512 x16)
Sense Amplifier
Bank 3
Memory Array
(16384 x512 x16)
Sense Amplifier
Bank 2
Memory Array
(16384 x512 x16)
Sense Amplifier
Bank 1
Memory Array
(16384 x512 x16)
Sense Amplifier
Bank 0
Memory Array
(16384 x256 x32)
Sense Amplifier
16384
8192
256 (x32)
8
8
2
32
32
32
Read Latch
Write
FIFO
&
Drivers
8
8
8
8
MUX
COL0,1
Drivers
DQS
Generator
8
2
Data
DQS,
DQS
2
2
2
2
8
8
8
8
2
2
2
2
8
8
8
8
4
Mask
32
Data
COL0,1
CK,
CK
2
8
Receivers
ODT Control
DM
DQS,
DQS
ODT
DLL
CK, CK
14
3
COL0,1
Input
Register
Notes:
1. This Functional Block Diagram is intended to facilitate user understanding of the operation of the device; it does
not represent an actual circuit implementation.
2. DM is an unidirectional signal (input only), but it is internally loaded to match the load of the bidirectional DQ
and DQS signals.
2
DQ0 – DQ7
RDQS ,
NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG
1Gb DDR2 SDRAM
11
REV 1.8 CONSUMER DRAM
Nov / 2009 © NANYA TECHNOLOGY CORP. All rights reserved
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
Block Diagram (64Mb x 16)
Column
Decoder
Column
Decoder
Column
Decoder
Column
Decoder
Column
Decoder
Column
Decoder
Column
Decoder
Column
Decoder
I/O Gating
DM Mask Logic
Bank 7
Row-Address
Latch &
Decoder
Bank 6
Row-Address
Latch &
Decoder
Bank 5
Row-Address
Latch &
Decoder
Bank 4
Row-Address
Latch &
Decoder
Bank 3
Row-Address
Latch &
Decoder
Bank 2
Row-Address
Latch &
Decoder
Bank 1
Row-Address
Latch &
Decoder
Command
Decode
Mode
Registers
Control Logic
CKE
CK
CK
CS
WE
CAS
RAS
Address Register
16
Row-Address MUX
13
A0 – A12,
BA0 – BA2
10
16
13
Refresh Counter
Column-Address
Counter/Latch
3
Bank Control
Logic
8
Bank 0
Row-Address
Latch &
Decoder
Bank 7
Memory Array
(16384 x512 x16)
Sense Amplifier
Bank 6
Memory Array
(16384 x512 x16)
Sense Amplifier
Bank 5
Memory Array
(16384 x512 x16)
Sense Amplifier
Bank 4
Memory Array
(16384 x512 x16)
Sense Amplifier
Bank 3
Memory Array
(16384 x512 x16)
Sense Amplifier
Bank 2
Memory Array
(16384 x512 x16)
Sense Amplifier
Bank 1
Memory Array
(16384 x512 x16)
Sense Amplifier
Bank 0
Memory Array
(8192 x 256 x 64)
Sense Amplifier
8192
16384
256 (x64)
8
8
2
64
64
64
Read Latch
Write
FIFO
&
Drivers
16
16
16
16
MUX
COL0,1
Drivers
DQS
Generator
16
4
Data
UDQS,
LDQS,
2
2
2
2
16
16
16
16
2
2
2
2
16
16
16
16
8
Mask
64
Data
COL0,1
CK,
CK
2
16
Receivers
ODT Control
UDM,
LDM
UDQS,
UDQS
DQ0 –
DQ15
ODT
DLL
CK, CK
13
3
COL0,1
Input
Register
Notes:
1. This Functional Block Diagram is intended to facilitate user understanding of the operation of the device; it does
not represent an actual circuit implementation.
2. DM is an unidirectional signal (input only), but it is internally loaded to match the load of the bidirectional DQ
and DQS signals.
LDQS,
LDQS
4
NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG
1Gb DDR2 SDRAM
12
REV 1.8 CONSUMER DRAM
Nov / 2009 © NANYA TECHNOLOGY CORP. All rights reserved
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
Functional Description
The 1Gb DDR2 SDRAM is a high-speed CMOS, dynamic random-access memory containing 1,073,741,824 bits. The
1Gb DDR SDRAM is internally configured as a octal-bank DRAM.
Read and write accesses to the DDR2 SDRAM are burst oriented; accesses start at a selected location and continue for
the burst length of four or eight in a programmed sequence. Accesses begin with the registration of an Activate command,
which is followed by a Read or Write command. The address bits registered coincident with the activate command are
used to select the bank and row to be accesses (BA0, BA1, & BA2 select the banks, A0-A13 select the row for x4 and x8
components, A0-A12 select the row for x16 components). The address bits registered coincident with the Read or Write
command are used to select the starting column location for the burst access and to determine if the Auto-Precharge
command is to be issued.
Prior to normal operation, the DDR2 SDRAM must be initialized. The following sections provide detailed information
covering device initialization, register definition, command description and device operation.
Power-up and Initialization
DDR2 SDRAMs must be powered up and initialized in a predefined manner. Operational procedures other than those
specified may result in undefined operation.
The following sequence is required for POWER UP and Initialization.
1. Either one of the following sequence is required for Power-up.
While applying power, attempt to maintain CKE below 0.2 x VDDQ and ODT at a Low state (all other inputs may be unde-
fined) The VDD voltage ramp time must be no greater than 200ms from when VDD ramps from 300mV to VDD min; and
during the VDD voltage ramp up, IVDD-VDDQI≦0.3 volts. Once the ramping of the supply voltages is complete (when
VDDQ crosses VDDQ min), the supply voltage specifications in Re-commanded DC operating conditions table.
- VDD, VDDL, and VDDQ are driven from a signal power converter output, AND
- VTT is limited to 0.95V max, AND
- Vref tracks VDDQ/2; Vref must be within ±300mV with respect to VDDQ/2 during supply ramp time.
- VDDQ>=VREF must be met at all times.
While applying power, attempt to maintain CKE below 0.2 x VDDQ and ODT at a Low state, all other inputs may be
undefined, voltage levels at I/Os and outputs must be less than VDDQ during voltage ramp time to avoid DRAM latch-up.
During the ramping of the supply voltages, VDD≧VDDL≧VDDQ must be maintained and is applicable to both AC and
DC levels until the ramping of the supply voltages is complete, which is when VDDQ crosses VDDQ min. Once the
ramping of the supply voltages is complete, the supply voltage specifications provided in Re-commanded DC operating
conditions table.
- Apply VDD/VDDL before or at the same time as VDDQ.
- VDD/VDDL voltage ramp time must be no greater than 200ms from when VDD ramps from 300mV to VDDmin.
- Apply VDDQ before or at the same time as VTT.
NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG
1Gb DDR2 SDRAM
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- The VDDQ voltage ramp time from when VDD min is achieved on VDD to when VDDQ min is achieved on VDDQ must
be no greater than 500ms. (Note: While VDD is ramping, current may be supplied from VDD through the DRAM to
VDDQ.)
- Vref must track VDDQ/2; Vref must be within ±300mV with respect to VDDQ/2 during supply ramp time.
- VDDQ ≧ VREF must be met at all time.
- Apply VTT.
2. Start clock (CK, ) and maintain stable condition.
3. For the minimum of 200us after stable power (VDD, VDDL, VDDQ, VREF, and VTT are between their minimum and
maximum values as stated in Re-commanded DC operating conditions table, and stable clock, then apply NOP or
Deselect & take CKE HIGH.
4. Waiting minimum of 400ns then issue pre-charge all command. NOP or Deselect applied during 400ns period.
5. Issue an EMRS command to EMR (2). (Provide LOW to BA0 and BA2, and HIGH to BA1).
6. Issue an EMRS command to EMR (3). (Provide LOW to BA2 and HIGH to BA0 and BA1).
7. Issue EMRS to enable DLL. (Provide Low to A0, HIGH to BA0 and LOW to BA1-BA2 and A13-A15. And
A9=A8=A7=LOW must be used when issuing this command.)
8. Issue a Mode Register Set command for DLL reset. (Provide HIGH to A8 and LOW to BA0-BA2, and A13-A15.)
9. Issue a precharge all command.
10. Issue 2 more auto-refresh commands.
11. Issue a MRS command with LOW to A8 to initialize device operation (i.e. to program operating parameters without
resetting the DLL.)
12. At least 200 clocks after step 7, execute OCD Calibration (Off Chip Driver impedance adjustment). If OCD calibration
is not used, EMRs to EMR (1) to set OCD Calibration Default (A9=A8=A7=HIGH) followed by EMRS to EMR (1) to exit
OCD Calibration Mode (A9=A8=A7=LOW) must be issued with other operating parameters of EMR(1).
13. The DDR2 DRAM is now ready for normal operation.
* To guarantee ODT off, VREF must be valid and a low level must be applied to the ODT pin.
Example
CK, CK
1st Auto
refresh
MRS
PRE
ALL EMRS
CMD
2nd Auto
refresh
tRP tRP tRFC tRFC
Extended Mode
Register Set
with DLL enable
Mode Register Set
with DLL reset
PRE
ALL
tMRD tMRD
min. 200 cycles to
lock the DLL
CKE
Command
400 ns
MRS
NOP
tMRD
EMRS
Follow OCD
flowchart
ODT "low"
Follow OCD
flowchart
EMRS
NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG
1Gb DDR2 SDRAM
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REV 1.8 CONSUMER DRAM
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Register Definition
Programming the Mode Registration and Extended Mode Registers
For application flexibility, burst length, burst type, latency, DLL reset function, write recovery time (tWR) are user
defined variables and must be programmed with a Mode Register Set (MRS) command. Additionally, DLL disable
function, additive latency, driver impedance, ODT (On Die Termination), single-ended strobe and OCD (off chip
driver impedance adjustment) are also user defined variables and must be programmed with an Extended Mode Register
Set (EMRS) command. Contents of the Mode Register (MR) and Extended Mode Registers (EMR (#)) can be altered by
re-executing the MRS and EMRS Commands. If the user chooses to modify only a subset of the MRS or EMRS variables,
all variables must be redefined when the MRS or EMRS commands are issued. MRS, EMRS and DLL Reset do not affect
array contents, which mean re-initialization including those can be executed any time after power-up without affecting
array contents.
Mode Registration Set (MRS)
The mode register stores the data for controlling the various operating modes of DDR2 SDRAM. It controls latency,
burst length, burst sequence, test mode, DLL reset, tWR and various vendor specific options to make DDR2 SDRAM
useful for various applications. The default value of the mode register is not defined, therefore the mode register must be
written after power-up for proper operation. The mode register is written by asserting low on , , , , BA0 and
BA1, while controlling the state of address pins A0 ~ A13. The DDR2 SDRAM should be in all banks precharged (idle)
mode with CKE already high prior to writing into the mode register. The mode register set command cycle time (tMRD) is
required to complete the write operation to the mode register. The mode register contents can be changed using the
same command and clock cycle requirements during normal operation as long as all banks are in the precharged state.
The mode register is divided into various fields depending on functionality. Burst length is defined by A0 ~ A2 with options
of 4 and 8 bit burst length. Burst address sequence type is defined by A3 and latency is defined by A4 ~ A6. A7 is
used for test mode and must be set to low for normal MRS operation. A8 is used for DLL reset. A9 ~ A11 are used for
write recovery time (WR) definition for Auto-Precharge mode.
NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG
1Gb DDR2 SDRAM
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MRS Mode Register Operation Table (Address Input for Mode Set)
A0A1A2A3A4A5A6A7A8A9A10A11A12A13BA0BA1BA2
Address Field
BLA0A1A2
4010
8110
Burst Length
Burst TypeA3
Sequential0
Interleave
1
Burst Type
CAS LatencyA4A5A6
Reserved000
Reserved100
/CAS Latency
010
110
001
101
011
111
6
Reserved
7
MRS mode
BA0BA1
MR
00
EMR(1)
10
MRS mode
01
11 EMR(3)
EMR(2)
Active power down
exit time
A12
Fast exit (use tXARD)0
Slow exit (use tXARDS)
1
Active power down exit
time
* *
WR(cycles)A9A10A11
Reserved000
2100
Write recovery for autoprecharge
010
110
001
101
011
111
4
5
6
7
3
DLL ResetA8
NO0
YES
1
DLL Reset
ModeA7
Normal0
TEST
1
Mode
* BA2 and A13 are reserved for future use and must be set to
"0" when programming MR.
3
4
5
DDR2-1066
DDR2-667
DDR2-800
DDR2-533
Reserved
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1Gb DDR2 SDRAM
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Extended Mode Register Set -EMRS (1) Programming
A0A1A2A3A4A5A6A7A8A9A10A11A12A13BA0BA1BA2
Address Field
DLL
Enable
A0
Enable
0
Disable1
DLL
Output Driver
Impedance Control
A1
Full strength
0
Reduced strength
1
D.I.C
Rtt (Nominal)A2A6
ODT Disabled00
75 ohm10
Rtt
01
11 50 ohm *2
150 ohm
MRS mode
BA0BA1
MR
00
EMR(1)
10
MRS mode
01
11 EMR(3)
EMR(2)
Qoff
* *
DQSA10
Enable0
Disable
1
DQS
*BA2 and A13 are reserved for future use and must be set to0 when programming the EMR(1).
*2 Mandatory for DDR2-1066
*3 When Adjust mode is issued, AL from previously set value must be applied.
*4 After setting to default, OCD calibration mode needs to be exited by settin gA9-A7 to 000.
*5 Output disabled – DQs, DQSs, DQSs, RDQS, RDQS. This feature is used in conjunction with DIMM IDD
measurements when IDDQ is not desired to be included.
*6 If RDQS is enabled, the DM function is disabled. RDQS is active for reads and do not care for writes.
Additive
Latency
A3A4A5
0000
1100
010
110
001
101
011
111
3
4
6
2
Reserved
Additive Latency
5
Qoff *5A12
Output buffer enabled0
Output buffer disabled
1
RDQS Enable*6A11
Enable
0Disable
1
RDQS
OCD Calibration ProgramA7A8
OCD Calibration mode
exit; maintain setting
00
Drive(1)10
01
00 Adjust mode *3
Drive(0)
A9
0
0
0
1
11 OCD Calibration default*41
OCD Program
NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG
1Gb DDR2 SDRAM
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Extended Mode Register Set –EMRS (1)
The extended mode register EMRS(1) stores the data for enabling or disabling the DLL, output driver strength, additive
latency, ODT, disable, OCD program, RQDS enable. The default value of the extended mode register EMRS(1) is
not defined, therefore the extended mode register must be written after power-up for proper operation. The extended
mode register is written by asserting low on , , , , BA1 and high on BA0, while controlling the state of the
address pins. The DDR2 SDRAM should be in all bank precharge with CKE already high prior to writing into the extended
mode register. The mode register set command cycle time (tMRD) must be satisfied to complete the write operation to the
EMRS (1). Mode register contents can be changed using the same command and clock cycle requirements during normal
operation as long as all banks are in precharge state. A0 is used for DLL enable or disable. A1 is used for enabling a half
strength output driver. A3-A5 determines the additive latency, A7-A9 are used for OCD control, A10 is used for
disable and A11 is used for RDQS enable. A2 and A6 are used for ODT setting.
Single-ended and Differential Data Strobe Signals
The following table lists all possible combinations for DQS, , RDQS, which can be programmed by A10 & A11
address bits in EMRS(1). RDQS and are available in x8 components only. If RDQS is enabled in x8 components,
the DM function is disabled. RDQS is active for reads and don‟t care for writes.
EMRS(1)
Strobe Function Matrix
A11
(RDQS Enable)
A10
( Enable)
RDQS/DM
DQS
Signaling
0 (Disable)
0 (Enable)
DM
Hi-Z
DQS
differential DQS signals
0 (Disable)
1 (Disable)
DM
Hi-Z
DQS
Hi-Z
single-ended DQS signals
1 (Enable)
0 (Enable)
RDQS
DQS
differential DQS signals
1 (Enable)
1 (Disable)
RDQS
Hi-Z
DQS
Hi-Z
single-ended DQS signals
DLL Enable/Disable
The DLL must be enabled for normal operation. DLL enable is required during power up initialization, and upon returning
to normal operation after having the DLL disabled. The DLL is automatically disabled when entering Self-Refresh
operation and is automatically re-enabled and reset upon exit of Self-Refresh operation. Any time the DLL is reset,
200 clock cycles must occur before a Read command can be issued to allow time for the internal clock to be
synchronized with the external clock. Less clock cycles may result in a violation of the tAC or tDQSCK
parameters.
Output Disable (Qoff)
Under normal operation, the DRAM outputs are enabled during Read operation for driving data (Qoff bit in the EMRS (1) is
set to 0). When the Qoff bit is set to 1, the DRAM outputs will be disabled. Disabling the DRAM outputs allows users to
measure IDD currents during Read operations, without including the output buffer current and external load currents.
NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG
1Gb DDR2 SDRAM
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EMRS(2) Extended Mode Register Set Programming
Address Field
Extended Mode
Register
1PASR***
BA1BA0A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0
0*
A2 A1 A0 Partial Array Self Refresh
0 0 0 Full array
0 0 1 Half Array (BA[2:0]=000,001,010, &011)
0 1 0 Quarter Array (BA[2:0]=000&001)
0 1 1 1/8th array (BA[2:0] = 000)
1 0 0 3 / 4 array (BA[2:0]=010,011,100,101,110, &111)
1 0 1 Half array (BA[2:0]=100,101,110, & 111)
1 1 0 Quarter array (BA[2:0]=110&111)
1 1 1 1/8th array (BA[2:0]=111)
0SRF
A7
0 Disable
1 Enable** (85C Tcase 95C)
High Temperature Self-Refresh Rate Enable
A12
0*
BA2
0*
BA0MRS mode
0 MRS
1EMRS(1)
BA1
0
0
1
11
0EMRS(2)
EMRS(3):
Reserved
* The rest bits in EMRS(2) is reserved for future use and all bits in EMRS(2) except A0-A2,A7,BA0, and
BA1 must be programmed to 0 when setting EMRS(2) during initialization.
** DDR2 SDRAM Module user can look at module SPD field Byte 49 bit [0].
*** Optional. If PASR(Partial Array Self Refresh) is enabled, data located in areas of the array beyond the
spec. location will be lost if self refresh is entered.
Extended Mode Register Set EMRS (2)
The Extended Mode Registers (2) controls refresh related features. The default value of the extended mode register(2) is
not defined, therefore the extended mode register(2) is written by asserting low on CS, RAS, CAS, WE, BA0, high on BA1,
while controlling the states of address pin A0-A13. The DDR2 SDRAM should be in all bank precharge with CKE already
high prior to writing into the extended mode register (2). The mode register set command cycle time (tMRD) must be
satisfied to complete the write operation to the extended mode register (2). Mode register contents can be changed using
the same command and clock cycle requirements during normal operation as long as all banks are in the precharge state.
EMRS(3) Extended Mode Register Set Programming
All bits in EMRS(3) expect BA0 and BA1 are reserved for future use and must be programmed to 0 when setting the mode
register during initialization.
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Off-Chip Driver (OCD) Impedance Adjustment
DDR2 SDRAM supports driver calibration feature and the flow chart below is an example of the sequence. Every
calibration mode command should be followed by “OCD calibration mode exit” before any other command being issued.
MRS should be set before entering OCD impedance adjustment and ODT (On Die Termination) should be carefully
controlled depending on system environment.
Start
EMRS: Drive(1)
DQ & DQS High; DQSLow
Test
EMRS :
Enter Adjust Mode
BL=4 code input to all DQs
Inc, Dec, or NOP
EMRS: Drive(0)
DQ & DQS Low; DQSHigh
Test
EMRS :
Enter Adjust Mode
BL=4 code input to all DQs
Inc, Dec, or NOP
EMRS: OCD calibration mode exit
End
ALL OK ALL OK
Need Calibration
EMRS: OCD calibration mode exit
MRS should be set before entering OCD impedance adjustment and ODT should
be carefully controlled depending on system environment
EMRS: OCD calibration mode exit
EMRS: OCD calibration mode exit
EMRS: OCD calibration mode exit
EMRS: OCD calibration mode exit
Need Calibration
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Extended Mode Register Set for OCD impedance adjustment
OCD impedance adjustment can be done using the following EMRS (1) mode. In drive mode all outputs are driven out by
DDR2 SDRAM and drive of RDQS is dependent on EMRS (1) bit enabling RDQS operation. In Drive (1) mode, all DQ, DQS
(and RDQS) signals are driven high and all (and ) signals are driven low. In Drive (0) mode, all DQ, DQS (and
RDQS) signals are driven low and all (and ) signals are driven high. In adjust mode, BL = 4 of operation code
data must be used. In case of OCD calibration default, output driver characteristics have a nominal impedance value of 18
Ohms during nominal temperature and voltage conditions. Output driver characteristics for OCD calibration default are
specified in the following table. OCD applies only to normal full strength output drive setting defined by EMRS (1) and if half
strength is set, OCD default driver characteristics are not applicable. When OCD calibration adjust mode is used, OCD
default output driver characteristics are not applicable. After OCD calibration is completed or driver strength is set to default,
subsequent EMRS(1) commands not intended to adjust OCD characteristics must specify A7~A9 as ‟000‟ in order to
maintain the default or calibrated value.
Off- Chip-Driver program
A9
A8
A7
Operation
0
0
0
OCD calibration mode exit
0
0
1
Drive(1) DQ, DQS, (RDQS) high and low
0
1
0
Drive(0) DQ, DQS, (RDQS) low and high
1
0
0
Adjust mode
1
1
1
OCD calibration default
NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG
1Gb DDR2 SDRAM
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OCD impedance adjust
To adjust output driver impedance, controllers must issue the ADJUST EMRS (1) command along with a 4 bit burst code to
DDR2 SDRAM as in the following table. For this operation, Burst Length has to be set to BL = 4 via MRS command before
activating OCD and controllers must drive the burst code to all DQs at the same time. DT0 is the table means all DQ bits at
bit time 0, DT1 at bit time 1, and so forth. The driver output impedance is adjusted for all DDR2 SDRAM DQs
simultaneously and after OCD calibration, all DQs of a given DDR2 SDRAM will be adjusted to the same driver strength
setting. The maximum step count for adjustment can be up to 16 and when the limit is reached, further increment or
decrement code has no effect. The default setting may be any step within the maximum step count range. When Adjust
mode command is issued, AL from previously set value must be applied.
4 bit burst code inputs to all DQs
Operation
DT0
DT1
DT2
DT3
Pull-up driver strength
Pull-down driver strength
0
0
0
0
NOP (no operation)
NOP (no operation)
0
0
0
1
Increase by 1 step
NOP
0
0
1
0
Decrease by 1 step
NOP
0
1
0
0
NOP
Increase by 1 step
1
0
0
0
NOP
Decrease by 1 step
0
1
0
1
Increase by 1 step
Increase by 1 step
0
1
1
0
Decrease by 1 step
Increase by 1 step
1
0
0
1
Increase by 1 step
Decrease by 1 step
1
0
1
0
Decrease by 1 step
Decrease by 1 step
Other Combinations
Reserved
For proper operation of adjust mode, WL = RL - 1 = AL + CL -1 clocks and tDS / tDH should be met as the following timing
diagram. Input data pattern for adjustment, DT0 ~ DT3 is fixed and not affected by MRS addressing mode (i.e. sequential or
interleave).
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OCD Adjust Mode
OCD adjust mode OCD calibration
mode exit
EMRS
CK
CK
CMD NOP NOP NOP NOP NOP
WL
DQS
DQ
tDS tDH
DT0DT1DT2DT3
DM
EMRS NOP
WR
DQS
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Drive Mode
Drive mode, both Drive (1) and Drive (0), is used for controllers to measure DDR2 SDRAM Driver impedance before OCD
impedance adjustment. In this mode, all outputs are driven out tOIT after “enter drive mode” command and all output drivers
are turned-off tOIT after “OCD calibration mode exit” command as the following timing diagram.
NOP NOP NOP
NOP
EMRS(1)
CMD
DQ_in
NOP
DQS_in
CK, CK
EMRS(1) NOP
Enter Drive Mode OCD calibration
mode exit
NOP
DQS high & DQS low for Drive(1), DQS low & DQS high for Drive 0
DQS high for Drive(0)
DQS high for Drive(1)
tOIT tOIT
On-Die Termination (ODT)
ODT (On-Die Termination) is a feature that allows a DRAM to turn on/off termination resistance for each DQ, DQ, DQS,
, RDQS, , and DM signal for x8 configurations via the ODT control pin. For x16 configuration ODT is applied to
each DQ, UDQS, , LDQS, , UDM and LDM signal via the ODT control pin. The ODT feature is designed to
improve signal integrity of the memory channel by allowing the DRAM controller to independently turn on/off termination
resistance for any or all DRAM devices.
The ODT function can be used for all active and standby modes. ODT is turned off and not supported in Self-Refresh mode.
Functional Representation of ODT
DRAM
Input
Buffer Input
Pin
Rval1
Rval1
Rval2
Rval2
sw1
sw1
sw2
sw2
VDDQ VDDQ
VSSQ VSSQ
Rval3
Rval3
sw3
sw3
VDDQ
VSSQ
Switch sw1, sw2, or sw3 is enabled by the ODT pin. Selection between sw1, sw2, or sw3 is determined by “Rtt (nominal)” in EMRS.
Termination included on all DQs, DM, DQS, , RDQS, and pins.
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ODT related timings
MRS command to ODT update delay
During normal operation the value of the effective termination resistance can be changed with an EMRS command. The
update of the Rtt setting is done between tMOD, min and tMOD, max, and CKE must remain HIGH for the entire duration of
tMOD window for proper operation. The timings are shown in the following timing diagram.
CKE
Rtt
CK,CK
tIS
CMD
tAOFD
EMRS NOP NOP NOP NOP NOP
tMOD, min
tMOD, max
Old setting Updating New setting
EMRS command directed to EMR(1), which updates the information in EMR(1)[A6,A2], i.e. Rtt(Nominal)
Setting in this diagram is the Register and I/O setting, not what is measured from outside.
However, to prevent any impedance glitch on the channel, the following conditions must be met.
- tAOFD must be met before issuing the EMRS command.
- ODT must remain LOW for the entire duration of tMOD window, until tMOD, max is met.
Now the ODT is ready for normal operation with the new setting, and the ODT may be raised again to turn on the ODT.
Following timing diagram shows the proper Rtt update procedure.
CKE
Rtt
CK,CK
tIS
CMD
tAOFD
EMRS NOP NOP NOP NOP
tMOD, max
Old setting New setting
EMRS command directed to EMR(1), which updates the information in EMR(1)[A6,A2], i.e. Rtt(Nominal)
Setting in this diagram is the Register and I/O setting, not what is measured from outside.
tAOND
NOP
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1Gb DDR2 SDRAM
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ODT On/Off timings
ODT timing for active/standby mode
Rtt
tIS
tIS
tIS
tAOND tAOFD(2.5tck)
T-3 T-5
T-4T-0 T-2
T-1 T-6
CKE
Internal
Term Res.
ODT
CK, CK
tAON, min tAON, max tAOF, min tAOF, max
ODT Timing for Power-down mode
t
IS
t
IS
tAOFPD,max
Rtt
tAONPD,min
tAOFPD,min
tAONPD,max
T5 T6
T4T3T2
T0 T1
CKE
DQ
ODT
CK, CK
NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG
1Gb DDR2 SDRAM
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REV 1.8 CONSUMER DRAM
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Bank Activate Command
The Bank Activate command is issued by holding and high plus and low at the rising edge of the clock.
The bank addresses BA0 ~ BA2 are used to select the desired bank. The row addresses A0 through A13 are used to
determine which row to activate in the selected bank for and x8 organized components. For x16 components row
addresses A0 through A12 have to be applied. The Bank Activate command must be applied before any Read or Write
operation can be executed. Immediately after the bank active command, the DDR2 SDRAM can accept a read or write
command (with or without Auto-Precharge) on the following clock cycle. If an R/W command is issued to a bank that has
not satisfied the tRCDmin specification, then additive latency must be programmed into the device to delay the R/W command
which is internally issued to the device. The additive latency value must be chosen to assure tRCDmin is satisfied. Additive
latencies of 0, 1, 2, 3, 4, 5, and 6 are supported. Once a bank has been activated it must be precharged before another
Bank Activate command can be applied to the same bank. The bank active and precharge times are defined as tRAS and tRP,
respectively. The minimum time interval between successive Bank Activate commands to the same bank is determined
(tRC). The minimum time interval between Bank Active commands, to other bank, is the Bank A to Bank B delay time (tRRD).
In order to ensure that 8 bank devices do not exceed the instantaneous current supplying capability of 4 bank devices,
certain restrictions on operation of the 8 bank devices must be observed. There are two rules. One for restricting the
number of sequential ACTcommands that can be issued and another for allowing more time for RAS precharge for a
Precharge All command. The rules are list as follow:
* 8 bank device sequential Bank Activation Restriction: No more than 4 banks may be activated in a rolling tFAW window.
Conveting to clocks is done by dividing tFAW by tCK and rounding up to next integer value. As an example of the rolling
window, if (tFAW/tCK) rounds up to 10 clocks, and an activate command is issued in clock N, no more than three further
activate commands may be issued in clock N+1 through N+9.
*8 bank device Precharge All Allowance: tRP for a Precharge All command for an 8 Bank device will equal to tRP+tCK,
where tRP is the value for a single bank pre-charge.
Bank Activate Command Cycle: tRCD = 3, AL = 2, tRP = 3, tRRD = 2, tCCD = 2
NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG
1Gb DDR2 SDRAM
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REV 1.8 CONSUMER DRAM
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Address NOP
Command
T0 T2T1 T3 T4
Col. Addr.
Bank A Row Addr.
Bank B Col. Addr.
Bank B
Internal RAS-CAS delay tRCDmin.
Bank A to Bank B delay tRRD.
Activate
Bank B
Read A
Posted CAS
Activate
Bank A Read B
Posted CAS
Read A
Begins
Row Addr.
Bank A Addr.
Bank A
Precharge
Bank A NOP
Addr.
Bank B
Precharge
Bank B
Row Addr.
Bank A
Activate
Bank A
tRP Row Precharge Time (Bank A)
tRC Row Cycle Time (Bank A)
Tn Tn+1 Tn+2 Tn+3
ACT
RAS-RAS delay tRRD.
tRAS Row Active Time (Bank A)
additive latency AL=2
CK, CK
NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG
1Gb DDR2 SDRAM
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REV 1.8 CONSUMER DRAM
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Read and Write Commands and Access Modes
After a bank has been activated, a read or write cycle can be executed. This is accomplished by setting high, and
low at the clock‟s rising edge. must also be defined at this time to determine whether the access cycle is a read
operation ( high) or a write operation ( low). The DDR2 SDRAM provides a fast column access operation. A single
Read or Write Command will initiate a serial read or write operation on successive clock cycles. The boundary of the burst
cycle is restricted to specific segments of the page length.
A new burst access must not interrupt the previous 4 bit burst operation in case of BL = 4 setting. However, in case of
BL=8 setting, two cases of interrupt by a new burst access are allowed, one reads interrupted by a read, the other writes
interrupted by a write with 4 bit burst boundary respectively, and the minimum to delay (tCCD) is minimum 2
clocks for read or write cycles.
Posted
Posted operation is supported to make command and data bus efficient for sustainable bandwidths in DDR2
SDRAM. In this operation, the DDR2 SDRAM allows a Read or Write command to be issued immediately after the
bank activate command (or any time during the to delay time, tRCD, period). The command is held for the time of
the Additive Latency (AL) before it is issued inside the device. The Read Latency (RL) is the sum of AL and the
latency (CL). Therefore if a user chooses to issue a Read/Write command before the tRCDmin, then AL greater than 0
must be written into the EMRS (1). The Write Latency (WL) is always defined as RL - 1 (Read Latency -1) where Read
Latency is defined as the sum of Additive Latency plus latency (RL=AL+CL). If a user chooses to issue a Read
command after the tRCDmin period, the Read Latency is also defined as RL = AL + CL.
Example of posted operation:
Read followed by a write to the same bank:
AL = 2 and CL = 3, RL = (AL + CL) = 5, WL = (RL -1) = 4, BL = 4
Dout0Dout1Dout2
Dout3
CMD
DQ
023 4 5 6 7 8 9 10 11 12-1 1
>=tRCD
AL = 2
RL = AL + CL = 5
CL = 3WL = RL -1 = 4
Din0 Din1 Din2 Din3
PostCAS1
DQS,
DQS
Activate Read Write
Bank A Bank A Bank A
CK, CK
NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG
1Gb DDR2 SDRAM
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REV 1.8 CONSUMER DRAM
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Read followed by a write to the same bank:
AL = 0, CL = 3, RL = (AL + CL) = 3, WL = (RL -1) = 2, BL = 4
Activate
Bank A
023 4 5 6 7 8 9 10 11 12-1 1
CMD
DQ
>=tRCD
RL = AL + CL = 3
WL = RL – 1 = 2
PostCAS5
DQS,
DQS
Read
Bank A
Din0 Din1 Din2 Din3
Dout0 Dout1 Dout2 Dout3
Write
Bank A
CK, CK
AL=0
CL=3
NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG
1Gb DDR2 SDRAM
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REV 1.8 CONSUMER DRAM
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Burst Mode Operation
Burst mode operation is used to provide a constant flow of data to memory locations (write cycle), or from
memory locations (read cycle). The parameters that define how the burst mode will operate are burst sequence
and burst length. The DDR2 SDRAM supports 4 bit and 8 bit burst modes only. For 8 bit burst mode, full
interleave address ordering is supported, however, sequential address ordering is nibble based for ease of
implementation. The burst type, either sequential or interleaved, is programmable and defined by the address
bit 3 (A3) of the MRS. Seamless burst read or write operations are supported. Interruption of a burst read or
write operation is prohibited, when burst length = 4 is programmed. For burst interruption of a read or write
burst when burst length = 8 is used, see the “Burst Interruption “section of this datasheet. A Burst Stop
command is not supported on DDR2 SDRAM devices.
Bust Length and Sequence
Burst Length
Starting Address
(A2 A1 A0)
Sequential Addressing
(decimal)
Interleave Addressing
(decimal)
4
x 0 0
0, 1, 2, 3
0, 1, 2, 3
x 0 1
1, 2, 3, 0
1, 0, 3, 2
x 1 0
2, 3, 0, 1
2, 3, 0, 1
x 1 1
3, 0, 1, 2
3, 2, 1, 0
8
0 0 0
0, 1, 2, 3, 4, 5, 6, 7
0, 1, 2, 3, 4, 5, 6, 7
0 0 1
1, 2, 3, 0, 5, 6, 7, 4
1, 0, 3, 2, 5, 4, 7, 6
0 1 0
2, 3, 0, 1, 6, 7, 4, 5
2, 3, 0, 1, 6, 7, 4, 5
0 1 1
3, 0, 1, 2, 7, 4, 5, 6
3, 2, 1, 0, 7, 6, 5, 4
1 0 0
4, 5, 6, 7, 0, 1, 2, 3
4, 5, 6, 7, 0, 1, 2, 3
1 0 1
5, 6, 7, 4, 1, 2, 3, 0
5, 4, 7, 6, 1, 0, 3, 2
1 1 0
6, 7, 4, 5, 2, 3, 0, 1
6, 7, 4, 5, 2, 3, 0, 1
1 1 1
7, 4, 5, 6, 3, 0, 1, 2
7, 6, 5, 4, 3, 2, 1, 0
Note: 1) Page length is a function of I/O organization
64Mb X 16 organization (CA0-CA9); Page Size = 2K Byte; Page Length = 1024
128Mb X 8 organization (CA0-CA9 ); Page Size = 1K Byte; Page Length = 1024
256Mb x 4 organization (CA0-CA9, CA11); Page Size = 1K Byte; Page Length = 2048
2) Order of burst access for sequential addressing is "nibble-based" and therefore different from SDR or
DDR components
NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG
1Gb DDR2 SDRAM
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REV 1.8 CONSUMER DRAM
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Burst Read Command
The Burst Read command is initiated by having and low while holding and high at the rising edge of the
clock. The address inputs determine the starting column address for the burst. The delay from the start of the command
until the data from the first cell appears on the outputs is equal to the value of the read latency (RL). The data strobe output
(DQS) is driven low one clock cycle before valid data (DQ) is driven onto the data bus. The first bit of the burst is
synchronized with the rising edge of the data strobe (DQS). Each subsequent data-out appears on the DQ pin in phase with
the DQS signal in a source synchronous manner. The RL is equal to an additive latency (AL) plus latency (CL). The
CL is defined by the Mode Register Set (MRS). The AL is defined by the Extended Mode Register Set (EMRS (1))
Basic Burst Read Timing
DQS,
DQS
DQ
DQS
DQS
tRPRE
tDQSQmax
tRPST
tDQSCK tAC
Dout Dout Dout Dout
CLK, CLK
CLK
CLK
tCH tCL tCK
DO-Read
tQH DQSQmax
tQH
t
tLZ tHZ
Examples:
Burst Read Operation: RL = 5 (AL = 2, CL = 3, BL = 4)
NOP NOP NOP NOP NOP NOP
NOP
READ A
T0 T2T1 T3 T4 T5 T6 T7 T8
Dout A0 Dout A1 Dout A2 Dout A3
RL = 5
AL = 2 CL = 3
NOP
<= tDQSCK
CMD
DQ
BRead523
DQS,
DQS
Post CAS
CK, CK
NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG
1Gb DDR2 SDRAM
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REV 1.8 CONSUMER DRAM
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Burst Read Operation: RL = 3 (AL = 0, CL = 3, BL = 8)
CMD
NOP NOP NOP NOP NOP NOP
DQ's
NOP
READ A
T0 T2T1 T3 T4 T5 T6 T7 T8
Dout A0 Dout A1 Dout A2 Dout A3
RL = 3
CL = 3
NOP
<= tDQSCK
BRead303
DQS,
DQS
Dout A4 Dout A5 Dout A6 Dout A7
CK, CK
Burst Read followed by Burst Write : RL = 5, WL = (RL-1) = 4, BL = 4
The minimum time from the burst read command to the burst write command is defined by a read-to-write-turn-around
time(tRTW), which is 4 clocks in case of BL=4 operation, 6 clocks in case of BL=8 operation.
Seamless Burst Read Operation: RL = 5, AL = 2, CL = 3, BL = 4
NOP NOP NOP NOP NOP NOP
NOP
READ A
Post CAS READ B
Post CAS
T0 T2T1 T3 T4 T5 T6 T7 T8
Dout A0 Dout A1 Dout A2 Dout A3 Dout B0 Dout B1 Dout B2 Dout B3
RL = 5
AL = 2 CL = 3
SBR523
CMD
DQ
DQS,
DQS
CK, CK
NOP Posted CAS
WRITE A NOP NOP NOP NOP
NOP
READ A
Posted CAS
T0 T1
Dout A0 Dout A1 Dout A2 Dout A3
RL = 5
NOP
CMD
DQ
BRBW514
Tn-1 Tn Tn+1 Tn+2 Tn+3 Tn+4 Tn+5
Din A0 Din A1 Din A2 Din A3
DQS,
DQS
WL = RL - 1 = 4
tRTW(Read to Write turn around time)
CK, CK
NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG
1Gb DDR2 SDRAM
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REV 1.8 CONSUMER DRAM
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The seamless burst read operation‟s supported by enabling a read command at every clock for BL=4 operation, and every
4 clock for BL=8 operation. This operation allows regardless of same or different banks as long as the banks activated.
Burst Write Command
The Burst Write command is initiated by having CS, CAS and WE low while holding RAS high at the rising edge of the clock.
The address inputs determine the starting column address. Write latency (WL) is defined by a read latency (RL) minus one
and is equal to (AL + CL -1). A data strobe signal (DQS) has to be driven low (preamble) a time tWPRE prior to the WL. The
first data bit of the burst cycle must be applied to the DQ pins at the first rising edge of the DQS following the preamble. The
tDQSS specification must be satisfied for write cycles. The subsequent burst bit data are issued on successive edges of the
DQS until the burst length is completed, which is 4 or 8 bit burst. When the burst has finished, any additional data supplied
to the DQ pins will be ignored. The DQ signal is ignored after the burst write operation is complete. The time from the
completion of the burst write to bank precharge is named “write recovery time” (WR) .
DDR2 SDRAM pin timings are specified for either single ended mode or differential mode depending on the setting of the
EMRS “Enable DQS” mode bit; timing advantages of differential mode are realized in system design. The method by which
the DDR2 SDRAM pin timing measured is mode dependent.
Basic Burst Write Timing
DQS,
DQS DQS
DQS
tDQSH tDQSL
tWPRE WPST
t
Din Din Din Din
tDS tDH
Example:
Burst Write Operation: RL = 5 (AL = 2, CL = 3), WL = 4, BL = 4
NOP NOP NOP NOP NOP Precharge
NOP
WRITE A
Post CAS
T0 T2T1 T3 T4 T5 T6 T7 T9
WL = RL-1 = 4
BW543
CMD
DQ
NOP
DIN A0 DIN A1 DIN A2 DIN A3
<= tDQSS
tWR
Completion of
the Burst Write
DQS,
DQS
CK, CK
NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG
1Gb DDR2 SDRAM
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REV 1.8 CONSUMER DRAM
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Burst Write Operation: RL = 3 (AL = 0, CL = 3), WL = 2, BL = 4
NOP NOP NOP NOP
NOP
WRITE A
Post CAS
T0 T2T1 T3 T4 T5 T6 T7 T9
WL = RL-1 = 2
BW322
CMD
DQ
NOP
DIN A0 DIN A1 DIN A2 DIN A3
tWR
Completion of
the Burst Write
<= tDQSS
Precharge Bank A
Activate
tRP
DQS,
DQS
CK, CK
Burst Write followed by Burst Read: RL = 5 (AL = 2, CL = 3), WL = 4, tWTR = 2, BL = 4
NOP NOP NOP NOP
NOP READ A
Post CAS
BWBR
CMD
DQ
NOP
DIN A0 DIN A1 DIN A2 DIN A3
AL=2 CL=3
NOP NOP
tWTR
T0 T2T1 T3 T4 T5 T6 T7 T8 T9
Write to Read = (CL - 1)+ BL/2 +tWTR(2) = 6
DQS,
DQS
WL = RL - 1 = 4
RL=5
CK, CK
The minimum number of clocks from the burst write command to the burst read command is (CL - 1) +BL/2 + tWTR where
tWTR is the write-to-read turn-around time tWTR expressed in clock cycles. The tWTR is not a write recovery time (tWR) but the
time required to transfer 4 bit write data from the input buffer into sense amplifiers in the array.
Seamless Burst Write Operation: RL = 5, WL = 4, BL = 4
NOP NOP NOP NOP NOP NOP
NOP
DIN A0 DIN A1 DIN A2 DIN A3
WRITE A
Post CAS
WL = RL - 1 = 4
WRITE B
Post CAS
DIN B0 DIN B1 DIN B2 DIN B3
T0 T2T1 T3 T4 T5 T6 T7 T8
CMD
DQ
SBR
DQS,
DQS
CK, CK
The seamless burst write operation is supported by enabling a write command every BL / 2 number of clocks. This
operation is allowed regardless of same or different banks as long as the banks are activated.
NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG
1Gb DDR2 SDRAM
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REV 1.8 CONSUMER DRAM
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NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG
1Gb DDR2 SDRAM
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REV 1.8 CONSUMER DRAM
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Write Data Mask
One write data mask input (DM) pin for each 8 data bits (DQ) will be supported on DDR2 SDRAMs, consistent with the
implementation on DDR SDRAMs. It has identical timings on write operations as the data bits, and though used in a
uni-directional manner, is internally loaded identically to data bits to insure matched system timing. DM of x4 and x16 bit
organization is not used during read cycles. However, DM of x8 bit organization can be used as RDQS during read cycles
by EMRS (1) setting.
Write Data Mask Timing
DQS
DQS, DQS
DQS
tDQSH tDQSL
tWPRE WPST
t
DQ Din Din Din Din
tDS DH
t
DM
don't care
Burst Write Operation with Data Mask: RL = 3 (AL = 0, CL = 3), WL = 2, tWR = 3, BL = 4
NOP NOP NOP NOP
NOP
WRITE A
T0 T2T1 T3 T4 T5 T6 T7 T9
WL = RL-1 = 2
DM
CMD
DQ
NOP
tWR
<= tDQSS
Precharge Bank A
Activate
tRP
DQS,
DQS
DM
DIN A0 DIN A1 DIN A3DIN A2
CK, CK
NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG
1Gb DDR2 SDRAM
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REV 1.8 CONSUMER DRAM
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Burst Interruption
Interruption of a read or write burst is prohibited for burst length of 4 and only allowed for burst length of
8 under the following conditions:
1. A Read Burst of 8 can only be interrupted by another Read command. Read burst interruption by a Write or
Precharge Command is prohibited.
2. A Write Burst of 8 can only be interrupted by another Write command. Write burst interruption by a Read or
Precharge Command is prohibited.
3. Read burst interrupt occur exactly two clocks after the previous Read command. Any other Read burst
interrupt timings are prohibited.
4. Write burst interrupt occur exactly two clocks after the previous Write command. Any other Read burst
interrupt timings are prohibited.
5. Read or Write burst interruption is allowed to any bank inside the DDR2 SDRAM.
6. Read or Write burst with Auto-Precharge enabled is not allowed to be interrupted.
7. Read burst interruption is allowed by a Read with Auto-Precharge command.
8. Write burst interruption is allowed by a Write with Auto-Precharge command.
9. All command timings are referenced to burst length set in the mode register. They are not referenced to the
actual burst. For example, Minimum Read to Precharge timing is AL + BL/2 where BL is the burst length set in
the mode register and not the actual burst (which is shorter because of interrupt). Minimum Write to Precharge
timing is WL + BL/ 2 + tWR, where tWR starts with the rising clock after the un-interrupted burst end and not form
the end of the actual burst end.
NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG
1Gb DDR2 SDRAM
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REV 1.8 CONSUMER DRAM
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Examples:
Read Burst Interrupt Timing Example: (CL = 3, AL = 0, RL = 3, BL = 8)
NOP NOP NOP NOP NOP
NOP
READ A
T0 T2T1 T3 T4 T5 T6 T7 T8
CMD
DQ
RBI
DQS,
DQS
READ B NOP
Dout A0 Dout A1 Dout A2 Dout A3 Dout B0 Dout B1 Dout B2 Dout B3 Dout B4 Dout B5 Dout B6 Dout B7
NOP
CK, CK
Write Burst Interrupt Timing Example: (CL = 3, AL = 0, WL = 2, BL = 8)
NOP NOP NOP NOP
NOP
WRITE A
T0 T2T1 T3 T4 T5 T6 T7 T8
CMD
DQ
WBI
DQS,
DQS
NOP
Din A0 Din A1 Din A2 Din A3 Din B0 Din B1 Din B2 Din B3 Dout B4 Din B5 Din B6 Din B7
NOP
WRITE B
CK, CK
NOP
NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG
1Gb DDR2 SDRAM
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REV 1.8 CONSUMER DRAM
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Precharge Command
The Precharge Command is used to precharge or close a bank that has been activated. The Precharge
Command is triggered when CS, RAS and WE are low and CAS is high at the rising edge of the clock. The
Pre-charge Command can be used to precharge each bank independently or all banks simultaneously. Three
address bits A10, BA0, BA1, and BA2 are used to define which bank to precharge when the command is
issued.
Bank Selection for Precharge by Address Bit
A10
BA2
BA1
BA0
Precharge
Bank(s)
LOW
LOW
LOW
LOW
Bank 0 only
LOW
LOW
LOW
HIGH
Bank 1 only
LOW
LOW
HIGH
LOW
Bank 2 only
LOW
LOW
HIGH
HIGH
Bank 3 only
LOW
HIGH
LOW
LOW
Bank 4 only
LOW
HIGH
LOW
HIGH
Bank 5 only
LOW
HIGH
HIGH
LOW
Bank 6 only
LOW
HIGH
HIGH
HIGH
Bank 7 only
HIGH
Don't Care
Don't Care
Don't Care
all banks
Burst Read Operation Followed by a Precharge
Minimum Read to Precharge command spacing to the same bank = AL + BL/2 + max (RTP, 2) - 2 clocks.
For the earliest possible precharge, the Precharge command may be issued on the rising edge which is “Additive Latency
(AL) + BL/2 clocks” after a Read Command, as long as the minimum tRAS timing is satisfied.
The minimum Read to Precharge spacing has also to satisfy a minimum analog time from the rising clock edge that initiates
the last 4-bit prefetch of a Read to Precharge command. This time is call tRTP (Read to Precharge). For BL=4 this is the
time from the actual read (AL after the Read command) to Precharge command. For BL=8 this is the time from AL + 2
clocks after the Read to the Precharge command.
NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG
1Gb DDR2 SDRAM
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REV 1.8 CONSUMER DRAM
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Examples:
Burst Read Operation Followed by Precharge: RL = 4 (AL = 1, CL = 3), BL = 4, tRTP ≦ 2 clocks
NOP Precharge NOP Bank A
Activate NOP
NOP
READ A
Post CAS
T0 T2T1 T3 T4 T5 T6 T7 T8
CMD
DQ
BR-P413
NOP
AL + BL/2 clks
Dout A0 Dout A1 Dout A2 Dout A3
AL = 1CL = 3
RL = 4
>=tRAS CL = 3
>=tRP
DQS,
DQS
NOP
>=tRC
>=tRTP
CK, CK
Burst Read Operation Followed by Precharge: RL = 4 (AL = 1, CL = 3), BL = 8, tRTP ≦ 2 clocks
NOP NOP NOP
Post CAS
READ A
T0 T2T1 T3 T4 T5 T6 T7 T8
CMD
DQ
BR-P413(8)
NOP
AL + BL/2 clks
Dout A0 Dout A1 Dout A2 Dout A3
AL = 1CL = 3
RL = 4
>=tRAS CL = 3
DQS,
DQS
NOP
>=tRC >=tRTP
Dout A4 Dout A5 Dout A6 Dout A7
Precharge NOP NOP
first 4-bit prefetch second 4-bit prefetch
CK, CK
NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG
1Gb DDR2 SDRAM
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REV 1.8 CONSUMER DRAM
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Burst Read Operation Followed by Precharge: RL = 5 (AL = 2, CL = 3), BL = 4, tRTP ≦ 2 clocks
NOP NOP NOP Bank A
Activate NOP
NOP
Post CAS
READ A
T0 T2T1 T3 T4 T5 T6 T7 T8
CMD
DQ
BR-P523
NOP
AL + BL/2 clks
Dout A0 Dout A1 Dout A2 Dout A3
AL = 2CL = 3
RL = 5
>=tRAS CL = 3
>=tRP
Precharge
DQS,
DQS
>=tRC
>=tRTP
CK, CK
Burst Read Operation Followed by Precharge: RL = 6, (AL = 2, CL = 4), BL = 4, tRTP ≦ 2 clocks
NOP NOP
NOP
READ A
Post CAS
T0 T2T1 T3 T4 T5 T6 T7 T8
CMD
DQ
BR-P624
NOP
AL + BL/2 clocks
Dout A0 Dout A1 Dout A2 Dout A3
AL = 2
CL = 4
RL = 6
>=tRAS CL = 4
Precharge
A
Bank A
Activate
DQS,
DQS
NOP NOP
>=tRC
>=tRTP
CK, CK
>=tRP
Burst Read Operation Followed by Precharge: RL = 4, (AL = 0, CL = 4), BL = 8, tRTP > 2 clocks
NOP NOP NOP
READ A
T0 T2T1 T3 T4 T5 T6 T7 T8
CMD
DQ
BR-P404(8)
NOP
AL + BL/2 clks + 1
Dout A0 Dout A1 Dout A2 Dout A3
CL = 4
RL = 4
>=tRAS
>=tRP
DQS,
DQS
NOP
>=tRTP
Dout A4 Dout A5 Dout A6 Dout A7
Precharge NOP Bank A
Activate
first 4-bit prefetch second 4-bit prefetch
CK, CK
NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG
1Gb DDR2 SDRAM
42
REV 1.8 CONSUMER DRAM
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Burst Write followed by Precharge
Minimum Write to Precharge command spacing to the same bank = WL + BL/2 + tWR. For write cycles, a delay
must be satisfied from the completion of the last burst write cycle until the Precharge command can be issued.
This delay is known as a write recovery time (tWR) referenced from the completion of the burst write to the
Precharge command. No Precharge command should be issued prior to the tWR delay, as DDR2 SDRAM does
not support any burst interrupt by a Precharge command. tWR is an analog timing parameter (see the AC table
in this datasheet) and is not the programmed value for tWR in the MRS.
Examples:
Burst Write followed by Precharge : WL = (RL - 1) = 3, BL = 4, tWR = 3
NOP NOP NOP NOP
NOP
WRITE A
Post CAS
T
0T
2
T
1T
3T
4T
5T
6T
7T
8
WL = 3
BW-P3
CMD
DQ
NOP
DIN
A0 DIN
A1 DIN
A2 DIN
A3
>=tWR
Completion of
the Burst Write
Precharge
A
NOP
DQS,
DQS
CK, CK
Burst Write followed by Precharge : WL = (RL - 1) = 4, BL = 4, tWR = 3
NOP NOP NOP NOP
NOP
WRITE A
Post CAS
T0 T2T1 T3 T4 T5 T6 T7 T9
WL = 4
BW-P4
CMD
DQ
NOP
DIN A0 DIN A1 DIN A2 DIN A3
tWR
Completion of
the Burst Write
Precharge
A
NOP
DQS,
DQS
CK, CK
NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG
1Gb DDR2 SDRAM
43
REV 1.8 CONSUMER DRAM
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Auto-Precharge Operation
Before a new row in an active bank can be opened, the active bank must be precharged using either the Pre-charge
Command or the Auto-Precharge function. When a Read or a Write Command is given to the DDR2 SDRAM, the
timing accepts one extra address, column address A10, to allow the active bank to automatically begin precharge at the
earliest possible moment during the burst read or write cycle. If A10 is low when the Read or Write Command is issued,
then normal Read or Write burst operation is executed and the bank remains active at the completion of the burst sequence.
If A10 is high when the Read or Write Command is issued, then the Auto-Precharge function is enabled. During
Auto-Precharge, a Read Command will execute as normal with the exception that the active bank will begin to precharge
internally on the rising edge which is Latency (CL) clock cycles before the end of the read burst. Auto-Precharge is
also implemented for Write Commands. The precharge operation engaged by the Auto-Precharge command will not begin
until the last data of the write burst sequence is properly stored in the memory array. This feature allows the precharge
operation to be partially or completely hidden during burst read cycles (dependent upon Latency) thus improving
system performance for random data access. The RAS lockout circuit internally delays the precharge operation until the
array restore operation has been completed so that the Auto-Precharge command may be issued with any read or write
command.
Burst Read with Auto-Precharge
If A10 is high when a Read Command is issued, the Read with Auto-Precharge function is engaged. The DDR2 SDRAM
starts an Auto-Precharge operation on the rising edge which is (AL + BL/2) cycles later from the Read with AP command if
tRAS(min) and tRTP are satisfied. If tRAS(min) is not satisfied at the edge, the start point of Auto-Precharge operation will be
delayed until tRAS(min) is satisfied. If tRTP(min) is not satisfied at the edge, the start point of Auto-Precharge operation will
be delayed until tRTP(min) is satisfied.
In case the internal precharge is pushed out by tRTP, tRP starts at the point where the internal precharge happens (not at the
next rising clock edge after this event). So for BL = 4 the minimum time from Read with Auto-Precharge to the next Activate
command becomes AL + tRTP + tRP. For BL = 8 the time from Read with Auto-Precharge to the next Activate command is AL
+ 2 + tRTP + tRP. Note that both parameters tRTP and tRP have to be rounded up to the next integer value. In any event internal
precharge does not start earlier than two clocks after the last 4-bit prefetch.
A new bank active (command) may be issued to the same bank if the following two conditions are satisfied simultaneously:
(1) The precharge time (tRP) has been satisfied from the clock at which the Auto-Precharge begins.
(2) The cycle time (tRC) from the previous bank activation has been satisfied.
NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG
1Gb DDR2 SDRAM
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REV 1.8 CONSUMER DRAM
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Examples:
Burst Read with Auto-Precharge followed by an activation to the Same Bank (tRC Limit)
RL = 5 (AL = 2, CL = 3), BL = 4, tRTP ≦ 2 clocks
NOP NOP NOP NOP Bank
Activate
NOP
READ w/AP
Posted CAS
T0 T2T1 T3 T4 T5 T6 T7 T8
Dout A0 Dout A1 Dout A2 Dout A3
RL = 5
AL = 2 CL = 3
NOP
CMD
DQ
BR-AP5231
A10 ="high"
tRP
Auto-Precharge Begins
DQS,
DQS
tRAS
tRCmin.
NOP
AL + BL/2
CK, CK
Burst Read with Auto-Precharge followed by an Activation to the Same Bank (tRAS Limit):
RL = 5 (AL = 2, CL = 3), BL = 4, tRTP ≦ 2 clocks
NOP NOP NOP NOP Bank
Activate
NOP
READ w/AP
Posted CAS
T0 T2T1 T3 T4 T5 T6 T7 T8
Dout A0 Dout A1 Dout A2 Dout A3
RL = 5
AL = 2 CL = 3
NOP
CMD
DQ
BR-AP5232
A10 ="high"
tRP
Auto-Precharge Begins
DQS,
DQS
tRC
tRAS(min)
NOP
CK, CK
NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG
1Gb DDR2 SDRAM
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REV 1.8 CONSUMER DRAM
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Burst Read with Auto-Precharge followed by an Activation to the Same Bank:
RL = 4 ( AL = 1, CL = 3), BL = 8, tRTP ≦ 2 clocks
NOP NOP NOP NOP Bank
Activate
NOP
READ w/AP
Posted CAS
T0 T2T1 T3 T4 T5 T6 T7 T8
Dout A0 Dout A1 Dout A2 Dout A3
RL = 4
AL = 1 CL = 3
NOP
CMD
DQ
BR-AP413(8)2
A10 ="high" tRP
Auto-Precharge Begins
DQS,
DQS
NOP
Dout A4 Dout A5 Dout A6 Dout A7
first 4-bit prefetch second 4-bit prefetch
>= tRTP
AL + BL/2
CK, CK
Burst Read with Auto-Precharge followed by an Activation to the Same Bank:
RL = 4 ( AL = 1, CL = 3), BL = 4, tRTP > 2 clocks
NOP NOP NOP NOP Bank
Activate
NOP
READ w/AP
Posted CAS
T0 T2T1 T3 T4 T5 T6 T7 T8
Dout A0 Dout A1 Dout A2 Dout A3
RL = 4
AL = 1 CL = 3
NOP
CMD
DQ
BR-AP4133
A10 ="high"
Auto-Precharge Begins
DQS,
DQS
NOP
first 4-bit prefetch
tRTP
AL + tRTP + tRP
tRP
CK, CK
NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG
1Gb DDR2 SDRAM
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REV 1.8 CONSUMER DRAM
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Burst Write with Auto-Precharge
If A10 is high when a Write Command is issued, the Write with Auto-Precharge function is engaged. The DDR2 SDRAM
automatically begins precharge operation after the completion of the write burst plus the write recovery time delay (WR),
programmed in the MRS register, as long as tRAS is satisfied. The bank undergoing Auto-Precharge from the completion of
the write burst may be reactivated if the following two conditions are satisfied.
(1) The last data-in to bank activate delay time (tDAL = WR + tRP) has been satisfied.
(2) The RAS cycle time (tRC) from the previous bank activation has been satisfied.
Examples:
Burst Write with Auto-Precharge (tRC Limit): WL = 2, tDAL = 6 (WR = 3, tRP = 3), BL = 4
NOP NOP NOP NOP NOP Bank A
Activate
NOP
WRITE
w/AP
T0 T2T1 T3 T4 T5 T6 T7
NOP
CMD
DQ
BW-AP223
A10 ="high"
tRP
Auto-Precharge Begins
DIN A0 DIN A1 DIN A2 DIN A3
WL = RL-1 = 2 WR
tRCmin.
DQS,
DQS
Completion of the Burst Write
tDAL
>=tRASmin.
CK, CK
Burst Write with Auto-Precharge (tWR + tRP Limit) : WL = 4, tDAL = 6 (tWR = 3, tRP = 3), BL = 4
NOP NOP NOP NOP NOP Bank A
Activate
NOP
Posted CAS
WRITE w/AP
T
0T
3T
4T
5T
6T
7T12
NOP
CMD
DQ
BW-AP423
A10 ="high"
tRP
Auto-Precharge Begins
DIN
A0 DIN
A1 DIN
A2 DIN
A3
WL = RL-1 = 4tWR
>=tRC
T
9
T
8
Completion of the Burst Write
DQS,
DQS
tDAL
>=tRAS
CK, CK
NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG
1Gb DDR2 SDRAM
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REV 1.8 CONSUMER DRAM
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Precharge & auto precharge clarification
From
Command
To Command
Minimum Delay between "From
command" to "to command"
Units
Note
Read
Precharge (to same Bank as Read)
AL + BL/2 + max(RTP,2) - 2
tCK
1,2
Precharge All
AL + BL/2 + max(RTP,2) - 2
tCK
1,2
Read w/AP
Precharge ( to same Bank as Read wAP)
AL + BL/2 + max(RTP,2) - 2
tCK
1,2
Precharge Al
AL + BL/2 + max(RTP,2) - 2
tCK
1,2
Write
Precharge (to same Bank as Write)
WL + BL/2 + tWR
tCK
2
Precharge Al
WL + BL/2 + tWR
tCK
2
Write w/AP
Precharge (to same bank as Write w/AP)
WL + BL/2 + WR
tCK
2
Precharge Al
WL + BL/2 + WR
tCK
2
Precharge
Precharge (to same bank as Precharge)
1
tCK
2
Precharge Al
1
tCK
2
Precharge All
Precharge
1
tCK
2
Precharge Al
1
tCK
2
Note:
1) RTP [cycles] = RU {tRTP(ns)/tCK(ns)}, where RI stands for round up.
2) For a given bank, the precharge period should be counted from the latest precharge command, either one bank precharge or precharge
all, issued to that bank. The precharge period is satisfied after tRP or tRPa depending on the latest precharge command issued to that
bank.
NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG
1Gb DDR2 SDRAM
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REV 1.8 CONSUMER DRAM
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Refresh
SDRAMs require a refresh of all rows in any rolling 64 ms interval. Each refresh is generated in one of two ways: by an
explicit Auto-Refresh command, or by an internally timed event in Self-Refresh mode. Dividing the number of device rows
into the rolling 64 ms interval defined the average refresh interval tREFI, which is a guideline to controllers for distributed
refresh timing. For example, a 1Gbit DDR2 SDRAM has 8392 rows resulting in a tREFI of 7.8 µs.
Auto-Refresh Command
Auto-Refresh is used during normal operation of the DDR2 SDRAMs. This command is nonpersistent, so it must be issued
each time a refresh is required. The refresh addressing is generated by the internal refresh controller. This makes the
address bits ”Don‟t Care” during an Auto-Refresh command. The DDR2 SDRAM requires Auto-Refresh cycles at an
average periodic interval of tREFI (maximum).
When , and are held low and high at the rising edge of the clock, the chip enters the Auto-Refresh mode.
All banks of the SDRAM must be precharged and idle for a minimum of the precharge time (tRP) before the Auto-Refresh
Command can be applied. An internal address counter supplies the addresses during the refresh cycle. No control of the
external address bus is required once this cycle has started.
When the refresh cycle has completed, all banks of the SDRAM will be in the precharged (idle) state. A delay between the
Auto-Refresh Command and the next Activate Command or subsequent Auto-Refresh Command must be greater than or
equal to the Auto-Refresh cycle time (tRFC).
To allow for improved efficiency in scheduling and switching between tasks, some flexibility in the absolute refresh interval
is provided. A maximum of eight Auto-Refresh commands can be posted to any given DDR2 SDRAM, meaning that the
maximum absolute interval between any Auto-Refresh command and the next Auto-Refresh command is 9 * tREFI.
T0 T2T1 T3
AR
CK, CK
CMD
Precharge
> = t
RP
NOP AUTO
REFRESH ANYNOP
> = t
RFC
> = t
RFC
AUTO
REFRESH
NOP NOP NOP
CKE "high"
NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG
1Gb DDR2 SDRAM
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REV 1.8 CONSUMER DRAM
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Self-Refresh Command
The Self-Refresh command can be used to retain data, even if the rest of the system is powered down. When in the
Self-Refresh mode, the DDR2 SDRAM retains data without external clocking.
The DDR2 SDRAM device has a built-in timer to accommodate Self-Refresh operation. The Self-Refresh Command is
defined by having , , and held low with high at the rising edge of the clock. ODT must be turned off
before issuing Self Refresh command, by either driving ODT pin low or using EMRS (1) command. Once the command is
registered, CKE must be held low to keep the device in Self-Refresh mode. When the DDR2 SDRAM has entered
Self-Refresh mode all of the external control signals, except CKE, are disabled. The clock is internally disabled during
Self-Refresh Operation to save power. The user may change the external clock frequency or halt the external clock one
clock after Self-Refresh entry is registered, however, the clock must be restarted and stable before the device can exit
Self-Refresh operation. Once Self-Refresh Exit command is registered, a delay equal or longer than the tXSNR or tXSRD must
be satisfied before a valid command can be issued to the device. CKE must remain high for the entire Self-Refresh exit
period (tXSNR or tXSRD) for proper operation. NOP or DESELECT commands must be registered on each positive clock edge
during the Self-Refresh exit interval. Since the ODT function is not supported during Self-Refresh operation, ODT has to be
turned off tAOFD before entering Self-Refresh Mode and can be turned on again when the tXSRD timing is satisfied.
CK/CK
T1 T3T2
CK/CK may
be halted CK/CK must
be stable
CKE >=tXSRD
>= tXSNR
Tn TrTmT5
T4
tRP* tis
tAOFD
CMD Self Refresh
Entry NOP Non-Read
Command Read
Command
T0
tis
tis
ODT
* Device must be in theing "All banks idle" state to enter Self Refresh mode.
* ODT must be turned off prior to entering Self Refresh mode.
* tXSRD (>=200 tCK) has to be satisfied for a Read or as Read with Auto-Precharge commend.
* tXSNR has to be satisfied for any command execept Read or a Read with Auto-Precharge command, where tXSNR is defined as tRFC + 10ns.
* The minium CKE low time is defined by the tCKEmin. timming paramester.
* Since CKE is an SSTL input, VREF must maintained during Self-Refresh.
NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG
1Gb DDR2 SDRAM
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REV 1.8 CONSUMER DRAM
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Power-Down
Power-down is synchronously entered when CKE is registered low, along with NOP or Deselect command. CKE is not
allowed to go low while mode register or extended mode register command time, or read or write operation is in progress.
CKE is allowed to go low while any other operation such as row activation, Precharge, Auto-Precharge or Auto-Refresh is
in progress, but power-down IDD specification will not be applied until finishing those operations.
The DLL should be in a locked state when power-down is entered. Otherwise DLL should be reset after exiting power-down
mode for proper read operation.
If power-down occurs when all banks are precharged, this mode is referred to as Precharge Power-down; if power-down
occurs when there is a row active in any bank, this mode is referred to as Active Power-down. For Active Power-down two
different power saving modes can be selected within the MRS register, address bit A12. When A12 is set to “low” this mode
is referred as “standard active power-down mode” and a fast power-down exit timing defined by the tXARD timing parameter
can be used. When A12 is set to “high” this mode is referred as a power saving “low power active power-down mode”. This
mode takes longer to exit from the power-down mode and the tXARDS timing parameter has to be satisfied.
Entering power-down deactivates the input and output buffers, excluding CK, CK, ODT and CKE. Also the DLL is disabled
upon entering Precharge Power-down or slow exit active power-down, but the DLL is kept enabled during fast exit active
power-down. In power-down mode, CKE low and a stable clock signal must be maintained at the inputs of the DDR2
SDRAM, and all other input signals are “Don‟t Care”. Power-down duration is limited by 9 times tREFI of the device.
The power-down state is synchronously exited when CKE is registered high (along with a NOP or Deselect command). A
valid, executable command can be applied with power-down exit latency, tXP, tXARD or tXARDS, after CKE goes high.
Power-down exit latencies are defined in the AC spec table of this data sheet.
Power-Down Entry
Active Power-down mode can be entered after an activate command. Precharge Power-down mode can be entered after a
precharge, Precharge-All or internal precharge command. It is also allowed to enter power-mode after an Auto-Refresh
command or MRS / EMRS(1) command when tMRD is satisfied.
Active Power-down mode entry is prohibited as long as a Read Burst is in progress, meaning CKE should be kept high until
the burst operation is finished. Therefore Active Power-Down mode entry after a Read or Read with Auto-Precharge
command is allowed after RL + BL/2 is satisfied.
Active Power-down mode entry is prohibited as long as a Write Burst and the internal write recovery is in progress. In case
of a write command, active power-down mode entry is allowed then WL + BL/2 + tWTR is satisfied.
In case of a write command with Auto-Precharge, Power-down mode entry is allowed after the internal precharge command
has been executed, which WL + BL/2 + WR is starting from the write with Auto-Precharge command. In case the DDR2
SDRAM enters the Precharge Power-down mode.
NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG
1Gb DDR2 SDRAM
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REV 1.8 CONSUMER DRAM
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Examples:
Active Power-Down Mode Entry and Exit after an Activate Command
NOP NOP
Activate
T0 T2T1
CMD NOP
Tn Tn+1
CKE
Active
Power-Down
Entry
NOP NOP
Act.PD 0
tIS
Tn+2
tIS
Active
Power-Down
Exit
Valid
Command
tXARD or
tXARDS *)
CK, CK
Active Power-Down Mode Entry and Exit after a Read Burst: RL = 4 (AL = 1, CL =3), BL = 4
NOP NOP
READ
T0 T2T1 T3 T4 T5 T6 T7 T8
Dout A0 Dout A1 Dout A2 Dout A3
RL = 4
CL = 3
CMD
DQ
DQS,
DQS
NOP NOP NOP NOP NOP NOP
Tn Tn+1
CKE
AL = 1
Active
Power-Down
Entry
RL + BL/2
NOP NOP
Act.PD 1
tIS
Tn+2
tIS
Active
Power-Down
Exit
Valid
Command
tXARD or
tXARDS *)
CK, CK
READ w/AP
NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG
1Gb DDR2 SDRAM
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REV 1.8 CONSUMER DRAM
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Active Power-Down Mode Entry and Exit after a Write Burst: WL = 2, tWTR = 2, BL = 4
NOP NOP
WRITE
T0 T2T1 T3 T4 T5 T6 T7
CMD
DQ
DQS,
DQS
NOP NOP NOP NOP NOP NOP
Tn Tn+1
CKE
WL = RL - 1 = 2
Active
Power-Down
Entry
WL + BL/2 + tWTR
NOP NOP
Act.PD 2
tWTR
tIS
Tn+2
tIS
Valid
Command
Active
Power-Down
Exit
tXARD or
tXARDS *)
CK, CK
DIN
A0 DIN
A1 DIN
A2 DIN
A3
Precharge Power Down Mode Entry and Exit
tXP
NOP NOP
Precharge
*)
T0 T2T1
CMD
NOP NOP
Tn Tn+1
CKE
Precharge
Power-Down
Entry
NOP NOP
PrePD
tIS
Tn+2
tIS
Precharge
Power-Down
Exit
Valid
Command
tRP
NOP
T3
*) "Precharge" may be an external command or an internal
precharge following Write with AP.
CK, CK
NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG
1Gb DDR2 SDRAM
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REV 1.8 CONSUMER DRAM
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No Operation Command
The No Operation Command should be used in cases when the SDRAM is in a idle or a wait state. The purpose of the No
Operation Command is to prevent the SDRAM from registering any unwanted commands between operations. A No
Operation Command is registered when is low with , , and held high at the rising edge of the clock. A No
Operation Command will not terminate a previous operation that is still executing, such as a burst read or write cycle.
Deselect Command
The Deselect Command performs the same function as a No Operation Command. Deselect Command occurs when is
brought high, the , , and signals become don‟t care.
Input Clock Frequency Change
During operation the DRAM input clock frequency can be changed under the following conditions:
a) During Self-Refresh operation
b) DRAM is in Precharge Power-down mode and ODT is completely turned off.
The DDR2-SDRAM has to be in Precharged Power-down mode and idle. ODT must be allready turned off and CKE must
be at a logic “low” state. After a minimum of two clock cycles after tRP and tAOFD have been satisfied the input clock
frequency can be changed. A stable new clock frequency has to be provided, before CKE can be changed to a “high” logic
level again. After tXP has been satisfied a DLL RESET command via EMRS(1) has to be issued. During the following DLL
re-lock period of 200 clock cycles, ODT must remain off. After the DLL-re-lock period the DRAM is ready to operate with the
new clock frequency.
Example:
Input frequency change during Precharge Power-Down mode
NOP NOP
T0 T2T1 T3 T4 Tx Tx+1 Ty
CMD
NOP NOP NOP NOP NOP DLL
RESET
Ty+2 Ty+3
CKE
Frequency Change
occurs here
NOP NOP
Frequ.Ch.
Tz
tXP
Stable new clock
before power-down exit
CK, CK
tRP
tAOFD Minimum 2 clocks
required before
changing the frequency
Ty+1
NOP Valid
Command
200 clocks
ODT is off during
DLL RESET
NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG
1Gb DDR2 SDRAM
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REV 1.8 CONSUMER DRAM
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Asynchronous CKE Low Event
DRAM requires CKE to be maintained “high” for all valid operations as defined in this data sheet. If CKE asynchronously
drops “low” during any valid operation DRAM is not guaranteed to preserve the contents of the memory array. If this event
occurs, the memory controller must satisfy a time delay ( tdelay ) before turning off the clocks. Stable clocks must exist at the
input of DRAM before CKE is raised “high” again. The DRAM must be fully re-initialized as described the the initialization
sequence (section 2.2.1, step 4 thru 13). DRAM is ready for normal operation after the initialization sequence. See AC
timing parametric table for tdelay specification.
Asynchronous CKE Low Event
CKE
CKE drops low due to an
asynchronous reset event Clocks can be turned off after
this point
tdelay
CK, CK
stable clocks
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Truth Table
Command Truth Table
Function
CKE
CS
RAS
CAS
WE
BA0-BA2
A13-A11
A10
A9 - A0
Notes
Previous
Cycle
Current
Cycle
(Extended) Mode Register
Set
H
H
L
L
L
L
BA
OP Code
1, 2
Auto-Refresh
H
H
L
L
L
H
X
X
X
X
1
Self-Refresh Entry
H
L
L
L
L
H
X
X
X
X
1,8
Self-Refresh Exit
L
H
H
X
X
X
X
X
X
X
1,7,8
Single Bank Precharge
H
H
L
L
H
L
BA
X
L
X
1,2
Precharge all Banks
H
H
L
L
H
L
X
X
H
X
1
Bank Activate
H
H
L
L
H
H
BA
Row Address
1,2
Write
H
H
L
H
L
L
BA
Column
L
Column
1,2,3
Write with Auto-Precharge
H
H
L
H
L
L
BA
Column
H
Column
1,2,3
Read
H
H
L
H
L
H
BA
Column
L
Column
1,2,3
Read with Auto-Precharge
H
H
L
H
L
H
BA
Column
H
Column
1,2,3
No Operation
H
X
L
H
H
H
X
X
X
X
1
Device Deselect
H
X
H
X
X
X
X
X
X
X
1
Power Down Entry
H
L
H
X
X
X
X
X
X
X
1,4
L
H
H
H
Power Down Exit
L
H
H
X
X
X
X
X
X
X
1,4
L
H
H
H
1. All DDR2 SDRAM commands are defined by states of , , , , and CKE at the rising edge of the clock.
2. Bank addresses (BAx) determine which bank is to be operated upon. For (E) MRS BAx selects an (Extended) Mode Register.
3. Burst reads or writes at BL = 4 cannot be terminated. See sections "Reads interrupted by a Read" and "Writes interrupted by a Write" inspection for
details.
4. The Power Down Mode does not perform any refresh operations. The duration of Power Down is therefore limited by the refresh requirements outlined.
5. The state of ODT does not affect the states described in this table. The ODT function is not available during Self Refresh.
6. X means "H or L (but a defined logic level)".
7. Self refresh exit is asynchronous.
8. Vref must be maintained during Self Refresh operation.
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Clock Enable (CKE) Truth Table for Synchronous Transitions
Current State 2
CKE
Command (N) 3
, , ,
Action (N) 3
Notes
Previous
Cycle 1
(N-1)
Current
Cycle 1
(N)
Power-Down
L
L
X
Maintain Power-Down
11, 13, 15
L
H
DESELECT or NOP
Power-Down Exit
4, 8, 11, 13
Self Refresh
L
L
X
Maintain Self Refresh
11, 15, 16
L
H
DESELECT or NOP
Self Refresh Exit
4, 5, 9, 16
Bank(s) Active
H
L
DESELECT or NOP
Active Power-Down Entry
4,8,10,11,13
All Banks Idle
H
L
DESELECT or NOP
Precharge Power-Down
Entry
4,8,10,11,13
H
L
AUTOREFRESH
Self Refresh Entry
6, 9, 11,13
Any State other
than listed above
H
H
Refer to the Command Truth Table
7
1. CKE (N) is the logic state of CKE at clock edge N; CKE (N-1) was the state of CKE at the previous clock edge.
2. Current state is the state of the DDR2 SDRAM immediately prior to clock edge N.
3. Command (N) is the command registered at clock edge N, and Action (N) is a result of Command (N).
4. All states and sequences not shown are illegal or reserved unless explicitly described elsewhere in this document.
5. On Self Refresh Exit DESELECT or NOP commands must be issued on every clock edge occurring during the tXSNR period. Read commands may
be issued only after tXSRD (200 clocks) is satisfied.
6. Self Refresh mode can only be entered from the All Banks Idle state.
7. Must be a legal command as defined in the Command Truth Table.
8. Valid commands for Power-Down Entry and Exit are NOP and DESELECT only.
9. Valid commands for Self Refresh Exit are NOP and DESELCT only.
10. Power-Down and Self Refresh cannot be entered while Read or Write operations, (Extended) mode Register operations, Precharge or Refresh
operations are in progress. See section 2.8 "Power Down" and section 2.7.2 "Self Refresh Command" for a detailed list of restrictions.
11. Minimum CKE high time is 3 clocks, minimum CKE low time is 3 clocks.
12. The state of ODT does not affect the states described in this table. The ODT function is not available during Self Refresh.
13. The Power-Down Mode does not perform any refresh operations. The duration of Power-Down Mode is therefore limited by the refresh
requirements.
14. CKE must be maintained high while the device is in OCD calibration mode.
15. "X" means "don't care (including floating around VREF)" in Self Refresh and Power Down. However DT must be driven high or low in Power Down if
the ODT function is enabled (Bit A2 or A6 set to "1" in MRS(1)).
16. Vref must be maintained during Self Refresh operation
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Operating Conditions
Absolute Maximum DC Ratings
Symbol
Parameter
Rating
Units
Notes
VDD
Voltage on VDD pin relative to VSS
-1.0 to + 2.3
V
1,3
VDDQ
Voltage on VDDQ pin relative to VSS
-0.5 to + 2.3
V
1,3
VDDL
Voltage on VDDL pin relative to VSS
-0.5 to + 2.3
V
1,3
VIN, VOUT
Voltage on any pin relative to VSS
-0.5 to + 2.3
V
1
TSTG
Storage Temperature
-55 to + 100
℃
1, 2
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to
the device. This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. Storage Temperature is the case surface temperature on the center/top side of the DRAM.
3. When VDD, VDDQ, and VDDL are less than 500mV, Vref may be equal to or less than 300mV.
DRAM Component Operating Temperature Range
Symbol
Parameter
Rating
Units
Notes
TOPER
Operating Temperature
0 to 85 (Standard Grade)
℃
1, 2
- 40 to 95 (Industrial Grade)
1, 3
Note:
1. Operating temperature is the case surface temperature on the center/top side of the DRAM.
2. The operation temperature range is the temperature where all DRAM specification will be supported. Outside of this temperature range, even if it is still within the limit of
stress condition, some deviation on portion of operation specification may be required. During operation, the DRAM case temperature must be maintained between 0℃-85 ℃
under all other specification parameter. However, in some applications, it is desirable to operate the DRAM up to 95 ℃ case temperature. Therefore, two spec. may exist.
Supporting 0℃-85℃ with full JEDEC AC & DC spec. This is the minimum requirements for all operating temperature options.
This is an optional feature and not required. Supporting 0℃-85℃ and being able to extend to 95℃ with doubling auto-refresh command in frequency to a 32ms period
(tRFI=3.9μs)
Currently the period Self-Refresh interval is hard coded within the DRAM to a vendor specific value. There is a migration plan to support higher temperature Self-Refresh entry
via the control of EMRS (2) bit A7.
3. The operation temperature range is the temperature where all DRAM specification will be supported. Outside of this temperature range, even if it is still within the limit of
stress condition, some deviation on portion of operation specification may be required. During operation, the DRAM case temperature must be maintained between -40-95 ℃
under all other specification parameter. However, in some applications, it is desirable to operate the DRAM up to 105 degree C case temperature. Therefore, two spec. may
exist. Supporting -40℃-95℃ and being able to extend to 105℃
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AC & DC Operating Conditions
DC Operating Conditions
Recommended DC Operating Conditions (SSTL_18)
Symbol
Parameter
Rating
Units
Notes
Min.
Typ.
Max.
VDD
Supply Voltage
1.7
1.8
1.9
V
1
VDDDL
Supply Voltage for DLL
1.7
1.8
1.9
V
5
VDDQ
Supply Voltage for Output
1.7
1.8
1.9
V
1,5
VREF
Input Reference Voltage
0.49 * VDDQ
0.5 * VDDQ
0.51 * VDDQ
V
2, 3
VTT
Termination Voltage
VREF - 0.04
VREF
VREF + 0.04
V
4
1. VDDQ tracks with VDD, VDDDL tracks with VDD. AC parameters are measured with VDD, VDDQ and VDDDL tied together.
2. The value of VREF may be selected by the user to provide optimum noise margin in the system. Typically the value of VREF is expected to be
about 0.5 x VDDQ of the transmitting device and VREF is expected to track variations in VDDQ.
3. Peak to peak ac noise on VREF may not exceed +/- 2% VREF (dc).
4. VTT is not applied directly to the device. VTT is a system supply for signal termination resistors is expected to be set equal to VREF and must
track variations in die dc level of VREF.
5. VDDQ tracks with VDD, VDDL tracks with VDD. AC parameters are measured with VDD, VDDQ, and VDDL tied together.
ODT DC Electrical Characteristic
Parameter / Condition
Symbol
min.
nom.
max.
Units
Notes
Rtt eff. impedance value for EMRS(1)(A6,A2)=0,1; 75 ohm
Rtt1(eff)
60
75
90
ohms
1
Rtt eff. impedance value for EMRS(1)(A6,A2)=0,1; 150 ohm
Rtt2(eff)
120
150
180
ohms
1
Rtt eff. impedance value for EMRS(1)(A6,A2)=1,1; 50 ohm
Rtt3(eff)
40
50
60
ohms
1
Deviation of VM with respect to VDDQ / 2
delta VM
-6
6
%
2
1) Measurement Definition for Rtt(eff):
Apply VIHac and VILac to test pin separately, then measure current I(VIHac) and I(VILac) respectively.
Rtt(eff) = (VIHac - VILac) /( I(VIHac) - I(VILac))
2) Measurement Definition for VM:
Measure voltage (VM) at test pin (midpoint) with no load:
delta VM =(( 2* VM / VDDQ) - 1 ) x 100%
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DC & AC Logic Input Levels
DDR2 SDRAM pin timing are specified for either single ended or differential mode depending on the setting of the
EMRS(1) “Enable DQS” mode bit; timing advantages of differential mode are realized in system design. The method by
which the DDR2 SDRAM pin timing are measured is mode dependent. In single ended mode, timing relationships are
measured relative to the rising or falling edges of DQS crossing at VREF. In differential mode, these timing relationships
are measured relative to the cross point of DQS and its complement, DQS. This distinction in timing methods is guaranteed
by design and characterization. In single ended mode, the DQS (and RDQS) signals are internally disabled and don‟t care.
Single-ended DC & AC Logic Input Levels
Symbol
Parameter
DDR2-533
DDR2-667/800/1066
Units
Min.
Max.
Min.
Max.
VIH (dc)
DC input logic high
VREF + 0.125
VDDQ + 0.3
VREF + 0.125
VDDQ + 0.3
V
VIL (dc)
DC input low
-0.3
VREF - 0.125
-0.3
VREF - 0.125
V
VIH (ac)
AC input logic high
VREF + 0.250
VDDQ+Vpeak
VREF + 0.200
VDDQ+Vpeak
V
VIL (ac)
AC input low
VSSQ-Vpeak
VREF - 0.250
VSSQ-Vpeak
VREF - 0.200
V
Single-ended AC Input Test Conditions
Symbol
Condition
Value
Units
Notes
VREF
Input reference voltage
0.5 * VDDQ
V
1, 2
VSWING(max)
Input signal maximum peak to peak swing
1
V
1, 2
SLEW
Input signal minimum slew rate
1
V / ns
3, 4
1. This timing and slew rate definition is valid for all single-ended signals except tis, tih, tds, tdh.
2. Input waveform timing is referenced to the input signal crossing through the VREF level applied to the device under test.
3. The input signal minimum slew rate is to be maintained over the range from VIL(dc)max to VIH(ac)min for rising edges and the
range from VIH(dc)min to VIL(ac)max for falling edges as shown in the below figure.
4. AC timings are referenced with input waveforms switching from VIL(ac) to VIH(ac) on the positive transitions and VIH(ac) to
VIL(ac) on the negative transitions.
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Differential DC and AC Input and Output Logic Levels
Symbol
Parameter
min.
max.
Units
Notes
VID(ac)
AC differential input voltage
0.5
VDDQ
V
1
VIX(ac)
AC differential cross point input voltage
0.5 * VDDQ - 0.175
0.5 * VDDQ + 0.175
V
2
VOX(ac)
AC differential cross point output voltage
0.5 * VDDQ - 0.125
0.5 * VDDQ + 0.125
V
3
Notes:
1) VID(ac) specifices the allowable DC execution of each input of differential pair such as CK, , DQS, , LDQS, , UDQS, and
.
2) VIX(ac) specifices the input differential voltage lVTR-VCPl required for switching, where VTR is the true input (such as CK, DQS, LDQS, or
UDQS) level and VCP is the complementary input (such , , , or ) level. The minimum value is equal to VIH(DC) - VIL(DC).
3) The typical value of VOX(AC) is expected to be about 0.5VDDQ of the transmitting device and VOX(AC) is expected to track variations in VDDQ.
VOX(AC) indicates the voltage at which differential signals must cross.
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Output Buffer Levels
Output AC Test Conditions
Symbol
Parameter
SSTL-18 Class II
Units
Notes
VOTR
Output Timing Measurement Reference Level
0.5 * VDDQ
V
1
1. The VDDQ of the device under test is referenced.
Output DC Current Drive
Symbol
Parameter
SSTL-18
Units
Notes
IOH(dc)
Output Minimum Source DC Current, nominal
-13.4
mA
1, 3, 4
IOL(dc)
Output Minimum Sink DC Current, nominal
13.4
mA
2, 3, 4
1. VDDQ = 1.7 V; VOUT = 1.42 V. (VOUT-VDDQ) / IOH must be less than 21 ohm for values of VOUT between VDDQ and VDDQ - 280 mV.
2. VDDQ = 1.7 V; VOUT = 280 mV. VOUT / IOL must be less than 21 ohm for values of VOUT between 0V and 280 mV.
3. The dc value of VREF applied to the receiving device is set to VTT
4. The values of IOH(dc) and IOL(dc) are based on the conditions given in note 1 and 2. They are used to test drive current capability to
ensure VIHmin. plus a noise margin and VILmax. minus a noise margin are delivered to an SSTL_18 receiver. The actual current values
are derived by shifting the desired driver operating points along 21 ohm load line to define a convenient current for measurement.
OCD Default Setting Table
Symbol
Description
Min.
Nominal
Max.
Unit
Notes
-
Pull-up / Pull down mismatch
0
-
4
Ohms
6
-
Output Impedance step size for OCD calibration
0
-
1.5
Ohms
1,2,3
SOUT
Output Slew Rate
1.5
-
5
V / ns
1,4,5,7,8
1) Absolute Specification: TOPEN; VDDQ = 1.8V ± 0.1V; VDD = 1.8V ± 0.1V.
2) Impedance measurement condition for output source dc current: VDDQ = 1.7V, VOUT = 1420 mV; (VOUT-VDDQ)/IOH must be less than 23.4 ohms for
values of VOUT between VDDQ and VDDQ-280mV. Impedance measurement condition for output sink dc current: VDDQ = 1.7 V; VOUT = -280mV; VOUT / IOL
must be less than 23.4 ohms for values of VOUT between 0V and 280 mV.
3) Mismatch is absolute value between pull-up and pull-down; both are measured at same temperature and voltage.
4) Slew rates measured from VIL(AC) to VIH(AC) with the load specified in Section 8.2.
5) The absolute value of the slew rate as measured from DC to DC is equal to or greater than the slew rate as measured from AC to AC. This is
guaranteed by design and characterization.
6) This represents the step size when the OCD is near 18 ohms at nominal conditions across all process parameters and represents only the DRAM
uncertainty. A 0 Ohm value (no calibration) can only be achieved if the OCD impedance is 18 ± 0.75 ohms under nominal conditions.
7) DRAM output slew rate specification applies to 533MT/s, 667MT/s, and 800MT/s speed pin.
8) Timing skew due to DRAM output slew rate mis-match between DQS / and associated DQ's is included in tDQSQ and tQHS specification.
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Default Output V-I Characteristics
DDR2 SDRAM output driver characteristics are defined for full strength default operation as selected by the EMRS (1) bits
A7~A9 = ‟111‟. The driver characteristics evaluation conditions area) Nominal Default 25℃ (Tcase), VDDQ=1.8V, typical
process. b) Minimum TOPER(max), VDDQ=1.7V, slow-slow process. c) Maximum 0℃ (Tcase), VDDQ=1.9V, fast-fast
process
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Full Strength Default Pullup Driver Characteristics
Voltage (V)
Minimum
(23.4 Ohms)
Nomal Default low
(18 Ohms)
Nomal Default high
(18 Ohms)
Maximum
(12.6 Ohms)
0.0
0.00
0.00
0.00
0.00
0.1
-4.30
-5.65
-5.90
-7.95
0.2
-8.60
-11.30
-11.80
-15.90
0.3
-12.90
-16.50
-16.80
-23.85
0.4
-16.90
-21.20
-22.10
-31.80
0.5
-20.05
-25.00
-27.60
-39.75
0.6
-22.10
-28.30
-32.40
-47.70
0.7
-23.27
-30.90
-36.90
-55.55
0.8
-24.10
-33.00
-40.90
-62.95
0.9
-24.73
-34.50
-44.60
-69.55
1.0
-25.23
-35.50
-47.70
-75.35
1.1
-25.65
-36.10
-50.40
-80.35
1.2
-26.02
-36.60
-52.60
-84.55
1.3
-26.35
-36.90
-54.20
-87.95
1.4
-26.65
-37.10
-55.90
-90.70
1.5
-26.93
-37.40
-57.10
-93.00
1.6
-27.20
-37.60
-58.40
-95.05
1.7
-27.46
-37.70
-59.60
-97.05
1.8
-
-37.90
-60.90
-99.05
1.9
-
-
-
-101.05
The driver characteristics evaluetion conditions are:
Nominal Default 25℃ (Tcase) , VDDQ = 1.8 V, typical process
Minimum Toper(max.), VDDQ = 1.7V, slow-slow process
Maximum 0 ℃ (Tcase). VDDQ = 1.9 V, fast-fast process
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Full Strength Default Pulldown Driver Characteristics
Voltage (V)
Minimum
(23.4 Ohms)
Nomal Default low
(18 Ohms)
Nomal Default high
(18 Ohms)
Maximum
(12.6 Ohms)
0.0
0.00
0.00
0.00
0.00
0.1
4.30
5.65
5.90
7.95
0.2
8.60
11.30
11.80
15.90
0.3
12.90
16.50
16.80
23.85
0.4
16.90
21.20
22.10
31.80
0.5
20.05
25.00
27.60
39.75
0.6
22.10
28.30
32.40
47.70
0.7
23.27
30.90
36.90
55.55
0.8
24.10
33.00
40.90
62.95
0.9
24.73
34.50
44.60
69.55
1.0
25.23
35.50
47.70
75.35
1.1
25.65
36.10
50.40
80.35
1.2
26.02
36.60
52.60
84.55
1.3
26.35
36.90
54.20
87.95
1.4
26.65
37.10
55.90
90.70
1.5
26.93
37.40
57.10
93.00
1.6
27.20
37.60
58.40
95.05
1.7
27.46
37.70
59.60
97.05
1.8
-
37.90
60.90
99.05
1.9
-
-
-
101.05
The driver characteristics evaluetion conditions are:
Nominal Default 25℃ (Tcase) , VDDQ = 1.8 V, typical process
Minimum Toper(max.), VDDQ = 1.7V, slow-slow process
Maximum 0 ℃ (Tcase). VDDQ = 1.9 V, fast-fast process
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Calibrated Output Driver V-I Characteristics
DDR2 SDRAM output driver characteristics are defined for full strength calibrated operation as selected by the procedure
outlined in the Off-Chip Driver (OCD) Impedance Adjustment. The following tables show the data in tabular format suitable
for input into simulation tools. The nominal points represent a device at exactly 18 ohms. The nominal low and nominal high
values represent the range that can be achieved with a maximum 1.5 ohms step size with no calibration error at the exact
nominal conditions only (i.e. perfect calibration procedure, 1.5 ohm maximum step size guaranteed by specification). Real
system calibration error needs to be added to these values. It must be understood that these V-I curves are represented
here or in supplier IBIS models need to be adjusted to a wider range as a result of any system calibration error. Since this a
system specific phenomena, it cannot be quantified here. the values in the calibrated tables represent just the DRAM
portion of uncertainty while looking at one DQ only. If the calibration procedure is used, it is possible to cause the device to
operate outside the bounds of the default device characteristics tables and figure. in such a situation, the timing parameters
in the specification cannot be guaranteed. It is solely up to the system application to ensure that the device is calibrated
between the minimum and maximum default values at all times. If this can‟t be guaranteed by the system calibration
procedure, re-calibration policy and uncertainty with DQ to DQ variation, it is recommend that only the default values to be
used. The nominal maximum ad minimum values represent the change in impedance from nominal low and high as a result
of voltage and temperature change from the nominal condition to the maximum and minimum conditions. If calibrated at an
extreme condition, the amount of variation could be as much as from the nominal minimum to the nominal maximum or vice
versa.
NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG
1Gb DDR2 SDRAM
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Full Strength Calibrated Pulldown Driver Characteristics
Voltage (V)
Nominal
Minimum
(21 Ohms)
Nomal Low
(18.75 Ohms)
Nominal
(18 ohms)
Nomal High
(17.25 Ohms)
Nominal
Maximum
(15 Ohms)
0.2
9.5
10.7
11.5
11.8
13.3
0.3
14.3
16.0
16.6
17.4
20.0
0.4
18.7
21.0
21.6
23.0
27.0
The driver characteristics evaluetion conditions are:
Nominal 25℃ (Tcase) , VDDQ = 1.8 V, typical process
Nominal Low and Nominal High 25℃ (Tcase), VDDQ = 1.8V, any process
Nominal Minimum Toper(max), VDDQ = 1.7 V, any process
Nominal Maximum 0℃(Tcase), VDDQ = 1.9 V, any process
Full Strength Calibrated Pullup Driver Characteristics
Voltage (V)
Nominal
Minimum
(21 Ohms)
Nomal Low
(18.75 Ohms)
Nominal
(18 ohms)
Nomal High
(17.25 Ohms)
Nominal
Maximum
(15 Ohms)
0.2
-9.5
-10.7
-11.4
-11.8
-13.3
0.3
-14.3
-16.0
-16.6
-17.4
-20.0
0.4
-18.7
-21.0
-21.6
-23.0
-27.0
The driver characteristics evaluetion conditions are:
Nominal 25℃ (Tcase) , VDDQ = 1.8 V, typical process
Nominal Low and Nominal High 25℃(Tcase), VDDQ = 1.8V, any process
Nominal Minimum Toper(max), VDDQ = 1.7 V, any process
Nominal Maximum 0℃ (Tcase), VDDQ = 1.9 V, any process
NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG
1Gb DDR2 SDRAM
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REV 1.8 CONSUMER DRAM
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Input/Output Capacitance
Symbol
Parameter
DDR2-533
DDR2-667
DDR2-800
DDR2-1066
Units
min.
max.
min.
max.
min.
max.
min.
max.
CCK
Input capacitance, CK and
1.0
2.0
1.0
2.0
1.0
2.0
1.0
2.0
pF
CDCK
Input capacitance delta, CK
and
-
0.25
-
0.25
-
0.25
-
0.25
pF
CI
Input capacitance, all other
input-only pins
1.0
2.0
1.0
2.0
1.0
1.75
1.0
1.75
pF
CDI
Input capacitance delta, all
other input-only pins
-
0.25
-
0.25
-
0.25
-
0.25
pF
CIO
Input/output capacitance,
DQ, DM, DQS,
2.5
4.0
2.5
3.5
2.5
3.5
2.5
3.5
2.5
CDIO
Input/output capacitance delta,
DQ, DM, DQS,
-
0.5
-
0.5
-
0.5
-
0.5
pF
NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG
1Gb DDR2 SDRAM
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REV 1.8 CONSUMER DRAM
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Power & Ground Clamp V-I Characteristics
Power and Ground clamps are provided on address (A0~A13, BA0, BA1, BA2), , , , WE, CKE, and
ODT pins. The V-I characteristics for pins with clamps is shown in the following table
Voltage across
clamp (V)
Minimum Power
Clamp Current (mA)
Minimum Ground
Clamp Current (mA)
0.0
0.0
0.0
0.1
0.0
0.0
0.2
0.0
0.0
0.3
0.0
0.0
0.4
0.0
0.0
0.5
0.0
0.0
0.6
0.0
0.0
0.7
0.0
0.0
0.8
0.1
0.1
0.9
1.0
1.0
1.0
2.5
2.5
1.1
4.7
4.7
1.2
6.8
6.8
1.3
9.1
9.1
1.4
11.0
11.0
1.5
13.5
13.5
1.6
16.0
16.0
1.7
18.2
18.2
1.8
21.0
21.0
NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG
1Gb DDR2 SDRAM
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IDD Specifications and Measurement Conditions
IDD Specifications
(VDDQ = 1.8V ± 0.1V; VDD = 1.8V ± 0.1V)
Symbol
Parameter/Condition
I/O
DDR2-533
-37B/-37BI
DDR2-667
-3C/-3CI
DDR2-800
DDR2-1066
Unit
Notes
-AD/-ADI
-AC/-ACI
-BE
-BD
IDD0
Operating Current
X4/x8
x16
85
85
100
100
115
115
115
115
125
145
130
150
mA
1,2
IDD1
Operating Current
X4/x8
x16
80
107
90
120
105
145
105
145
120
155
125
160
mA
1,2
IDD2P
Precharge Power-Down Current
All
9
9
9
9
9
9
mA
1,2
IDD2N
Precharge Standby Current
All
60
65
75
75
90
90
mA
1,2
IDD2Q
Precharge Quiet Standby Current
All
45
50
55
55
60
60
mA
1,2
IDD3P
Active Power-Down
Standby Current
MRS(12)=0
All
26
28
30
30
50
50
mA
1,2
MRS(12)=1
X4/x8
x16
11
13
11
13
11
13
11
13
11
13
11
13
mA
1,2
IDD3N
Active Standby Current
X4/x8
x16
55
60
60
60
70
70
70
70
75
95
75
95
mA
1,2
IDD4R
Operating Current Burst Read
X4/x8
x16
110
135
120
150
135
170
135
170
165
195
170
200
mA
1,2
IDD4W
Operating Current Burst Write
X4/x8
x16
95
110
105
125
120
140
120
140
135
165
140
170
mA
1,2
IDD5B
Burst Auto-Refresh Current
All
160
165
175
175
245
250
mA
1,2
IDD5D
Distributed Auto-Refresh Current
All
12
14
15
15
16
16
mA
1,2
IDD6
Self-Refresh Current for standard
products
All
9
9
9
9
9
9
mA
1,2
IDD7
Operating Current
X4/x8
x16
135
185
185
220
205
245
205
245
310
435
315
440
mA
1,2
Note:
1. IDD specifications are tested after the device is properly initialized. IDD parameters are specified with ODT disabled.
2. Input slew rate = 1 V/ns.
NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG
1Gb DDR2 SDRAM
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REV 1.8 CONSUMER DRAM
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IDD Measurement Conditions
(VDDQ = 1.8V ± 0.1V; VDD = 1.8V ± 0.1V)
Symbol Parameter/Condition
IDD0
Operating Current - One bank Active - Precharge
tCK =tCKmin.; tRC = tRCmin; tRAS = tRASmin; CKE is HIGH, is HIGH between valid commands.
Address and control inputs are SWITCHING; Data bus inputs are SWITCHING;
IDD1
Operating Current - One bank Active - Read - Precharge
IOUT = 0 mA; BL = 4, tCK = tCKmin, tRC = tRCmin; tRAS = tRASmin; tRCD = tRCDmin, CL = CLmin.;AL =
0; CKE is HIGH, is HIGH between valid commands;Address bus inputs are SWITCHING,Data bus
inputs are SWITCHING;
IDD2P
Precharge Power-Down Current: All banks idle; CKE is LOW; tCK = tCKmin.; Other control and address
inputs are STABLE, Data Bus inputs are FLOATING.
IDD2N
Precharge Standby Current: All banks idle; is HIGH; CKE is HIGH; tCK = tCKmin.; Other control and
address bus inputs are SWICHTING; Data bus inputs are SWITCHING.
IDD2Q
Precharge Quiet Standby Current:All banks idle; is HIGH; CKE is HIGH; tCK = tCKmin.; Other control
and address bus inputs are STABLE; Data bus inputs are FLOATING.
IDD3P(0)
Active Power-Down Current: All banks open; tCK = tCKmin.;CKE is LOW; Other control and address
inputs are STABLE; Data Bus inputs are FLOATING. MRS A12 bit is set to "0"( Fast Power-down Exit);
IDD3P(1)
Active Power-Down Current: All banks open; tCK = tCKmin.;CKE is LOW; Other control and address
inputs are STABLE; Data Bus inputs are FLOATING. MRS A12 bit is set to "1"( Slow Power-down Exit);
IDD3N
Active Standby Current: All banks open; tCK = tCKmin.; tRAS = tRASmax.; tRP = tRPmin., CKE is HIGH;
is HIGH between valid commands; Other control and address inputs are SWITCHING; Data Bus inputs
are SWITCHING.
IDD4R
Operating Current - Burst Read: All banks open; Continuous burst reads; BL = 4; AL = 0, CL = CLmin.; tCK
= tCKmin.; tRAS = tRASmax., tRP = tRPmin., CKE is HIGH, is HIGH between valid commands;
Address inputs are SWITCHING; Data bus inputs are SWITCHING; IOUT = 0mA.
IDD4W
Operating Current - Burst Write: All banks open; Continuous burst writes; BL = 4; AL = 0, CL = CLmin.; tCK
= tCKmin.; tRAS = tRASmax., tRP = tRPmin.;CKE is HIGH, is HIGH between valid commands; Address
inputs are SWITCHING; Data Bus inputs are SWITCHING.
IDD5B
Burst Auto-Refresh Current: tCK = tCKmin.; Refresh command every tRFC = tRFCmin interval; CKE is
HIGH, is HIGH between valid commands; Other control and adress inputs are SWITCHING; Data bus
inputs are SWITCHING.
IDD5D
Distributed Auto-Refresh Current: tCK = tCKmin.; Refresh command every tREFI interval; CKE is HIGH,
is HIGH between valid commands; Other control and adress inputs are SWITCHING; Data bus inputs
are SWITCHING.
IDD6
Self-Refresh Current: CKE <= 0.2V; external clock off, CK and at 0V; Other control and address inputs
are FLOATING; Data Bus inputs are FLOATING.
IDD7
Operating Bank Interleave Read Current:
1. All bank interleaving reads; IOUT = 0 mA, BL =4, CL = CLmin., AL = tRCDmin. - 1*tCK; tCK = tCKmin.,
tRC = TRCmin.; tRRD = tRRDmin; tRCD = 1*tCK, CKE = HIGH, CS is HIGH between valid commands;
Address bus inputs are STABLE during DESELECTS.
2. Timing pattern:
- DDR2 -533 4-4-4: A0 RA0 D A1 RA1 D A2 RA2 D A3 RA3 D D D D D
- DDR2 -667 5-5-5: A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D D D D
- DDR2 -800 6-6-6: A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D D D D D D D D
- DDR2 -800 5-5-5: A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D D D D D D D
- DDR2 -1066 6-6-6: A0 RA0 D D D D A1 RA1 D D D D A2 RA2 D D D D A3 RA3 D D D D D D D D D D
- DDR2 -1066 7-7-7: A0 RA0 D D D D A1 RA1 D D D D A2 RA2 D D D D A3 RA3 D D D D D D D D D D D
3. Legend : A=Activate, RA=Read with Auto-Precharge, D=DESELECT
1. IDD specifications are tested after the device is properly initialized.
2. IDD parameter are specified with ODT disabled.
3. Data Bus consists of DQ, DM, DQS, DQS, RDQS, RDQS, LDQS, LDQS, UDQS and UDQS.
4. Definitions for IDD :
LOW is defined as VIN <= VILAC(max.); HIGH is defined as VIN >= VIHAC(min.);
STABLE is defined as inputs are stable at a HIGH or LOW level
FLOATING is defined as inputs are VREF = VDDQ / 2
SW ITCHING is defined as:
Inputs are changing between HIGH and LOW every other clock (once per two clocks) for adress and control
signals, and
inputs changing between HIGH and LOW every other clock (once per two clocks) for DQ signals not including
mask or strobes
5. Timing parameter minimum and maximum values for IDD current measurements are defined in the following table.
NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG
1Gb DDR2 SDRAM
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IDD Measurement Conditions (cont’d)
For testing the IDD parameters, the following timing parameters are used:
Parameter
Symble
DDR2-533
-37B/-37BI
DDR2-667
-3C/-3CI
DDR2-800
DDR2-1066
Units
-AD/-ADI
-AC/-ACI
-BE
-BD
Latency
CL
4
N/A
tCK
N/A
5
6
5
7
6
tCK(avg)
Clock Cycle Time
tCK
3.75
3
2.5
2.5
1.875
1.875
ns
Active to Read or Write delay
tRCD
15
15
15
12.5
13.125
11.25
ns
Active to Active / Auto-Refresh
command period
tRC
60
60
60
57.5
58.125
56.25
ns
Active bank A to Active
bank B command delay
x8
tRRD
7.5
7.5
7.5
7.5
7.5
7.5
ns
x16
10
10
10
10
10
10
Active to Precharge Command
tRASmin
45
45
45
45
45
45
ns
tRASmax
70000
70000
70000
70000
70000
70000
Precharge Command Period
tRP
15
15
15
12.5
13.125
11.25
ns
Refresh parameters
Parameter
Symbol
Component Type
1Gb
Unit
Auto-Refresh to Active / Auto-Refresh
command period
tRFC
All
127.5
ns
Average periodic Refresh interval
tREFI
Standard Grade
(0℃≦Tcase≦85℃)
7.8
μs
(0℃≦Tcase≦85℃)
3.9
μs
Industry Grade
(-40℃≦Tcase≦95℃)
7.8
μs
NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG
1Gb DDR2 SDRAM
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REV 1.8 CONSUMER DRAM
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Electrical Characteristics & AC Timing - Absolute Specification
Timing Parameter by Speed Grade
(VDDQ = 1.8V ± 0.1V; VDD = 1.8V ± 0.1V)
Symbol
Parameter
DDR2-533
DDR2-667
DDR2-800
DDR2-1066
Units
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
tCK
Clock cycle time, CL=x,
3750
8000
N/A
ps
tCK(avg)
Clock cycle time, CL=x, (Average)
N/A
3000
8000
2500
8000
1875
8000
ps
tCH
CK, high-level width
0.45
0.55
N/A
tCK
tCH(avg)
CK, high-level width (Average)
N/A
0.48
0.52
0.48
0.52
0.48
0.52
tCK(avg)
tCL
CK, low-level width
0.45
0.55
N/A
tCK
tCL(avg)
CK, low-level width (Average)
N/A
0.48
0.52
0.48
0.52
0.48
0.52
tCK(avg)
WL
Write command to DQS associated clock
edge
RL-1
N/A
tCK
N/A
RL-1
nCK
tDQSS
DQS latching rising transitions to
associated clock edges
-0.25
0.25
N/A
tCK
N/A
-0.25
0.25
-0.25
0.25
-0.25
0.25
tCK(avg)
tDSS
DQS falling edge to CK setup time
0.2
-
N/A
tCK
N/A
0.2
-
0.2
-
0.2
-
tCK(avg)
tDSH
DQS falling edge hold time from CK
0.2
-
N/A
tCK
N/A
0.2
-
0.2
-
0.2
-
tCK(avg)
tDQSL,H
DQS input low (high) pulse width
0.35
-
N/A
tCK
N/A
0.35
-
0.35
-
0.35
-
tCK(avg)
tWPRE
Write preamble
0.35
-
N/A
tCK
N/A
0.35
-
0.35
-
0.35
-
tCK(avg)
tWPST
Write postamble
0.4
0.6
N/A
tCK
N/A
0.4
0.6
0.4
0.6
0.4
0.6
tCK(avg)
tIS
Address and control input setup time
250
-
200
-
175
-
125
-
ps
tIH
Address and control input hold time
375
-
275
-
250
-
200
-
ps
tIPW
Address and control input pulse width
(each input)
0.6
-
N/A
tCK
N/A
0.6
-
0.6
-
0.6
-
tCK(avg)
tDS
DQ and DM input setup time
differential
100
-
100
-
50
-
0
-
ps
tDH
DQ and DM input hold time
differential
225
-
175
-
125
-
75
-
ps
NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG
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REV 1.8 CONSUMER DRAM
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Symbol
Parameter
DDR2-533
DDR2-667
DDR2-800
DDR2-1066
Units
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
tDIPW
DQ and DM input pulse width
(each input)
0.35
-
N/A
tCK
N/A
0.35
-
0.35
-
0.35
-
tCK(avg)
tAC
DQ output access time from CK /
-500
500
-450
450
-400
400
-350
350
ps
tDQSCK
DQS output access time from CK /
-450
450
-400
400
-350
350
-350
350
ps
tHZ
Data-out high-impedance time from CK /
-
tAC,max
-
tAC,max
-
tAC,max
-
tAC,max
ps
tLZ(DQS)
DQS() low-impedance time from CK /
tAC,min
tAC,max
tAC,min
tAC,max
tAC,min
tAC,max
tAC,min
tAC,max
ps
tLZ(DQ)
DQ low-impedance time from CK /
2 x
tAC,min
tAC,max
2 x
tAC,min
tAC,max
2 x
tAC,min
tAC,max
2 x
tAC,min
tAC,max
ps
tDQSQ
DQS-DQ skew
(for DQS & associated DQ signals)
-
175
-
240
-
200
-
175
ps
tHP
Clock half period
Min
(tCH,
tCL )
-
Min
(tCH(avg)
tCL(avg) )
-
Min
(tCH(avg)
tCL(avg) )
-
Min
(tCH(avg)
tCL(avg) )
-
ps
tQHS
Data hold skew factor
-
250
-
340
-
300
-
250
ps
tQH
Data output hold time from DQS
tHP -
tQHS
-
tHP -
tQHS
-
tHP -
tQHS
-
tHP -
tQHS
-
ps
tRPRE
Read preamble
0.9
1.1
N/A
tCK
N/A
0.9
1.1
0.9
1.1
0.9
1.1
tCK(avg)
tRPST
Read postamble
0.4
0.6
N/A
tCK
N/A
0.4
0.6
0.4
0.6
0.4
0.6
tCK(avg)
tRRD
Active bank A to
Active bank B
command period
x8
(1k page size)
7.5
-
7.5
-
7.5
-
7.5
-
ns
x16
(2k page size)
10
-
10
-
10
-
10
-
ns
tFAW
Four Activate Window
x8
(1k page size)
37.5
-
37.5
-
35
-
35
-
ns
x16
(2k page size)
50
-
50
-
45
-
45
-
ns
tCCD
A to B command period
2
-
N/A
tCK
N/A
2
-
2
-
2
-
nCK
tWR
Write recovery time
15
-
15
-
15
-
15
-
ns
NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG
1Gb DDR2 SDRAM
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REV 1.8 CONSUMER DRAM
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NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
Symbol
Parameter
DDR2-533
DDR2-667
DDR2-800
DDR2-1066
Units
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
tDAL
Auto-Precharge write recovery
+ precharge time
WR +
tnRP
-
N/A
tCK
N/A
WR +
tnRP
-
WR +
tnRP
-
WR +
tnRP
-
nCK
tWTR
Internal Write to Read command delay
7.5
-
7.5
-
7.5
-
7.5
-
ns
tRTP
Internal Read to Precharge command
delay
7.5
-
7.5
-
7.5
-
7.5
-
ns
tCKE
CKE minimum high and low pulse width
3
-
N/A
tCK
N/A
3
-
3
-
3
-
nCK
tXSNR
Exit Self-Refresh to non-Read command
tRFC +
10
-
tRFC +
10
-
tRFC +
10
-
tRFC +
10
-
ns
tXSRD
Exit Self-Refresh to Read command
200
-
N/A
tCK
N/A
200
-
200
-
200
-
nCK
tXP
Exit precharge power-down to any valid
command (other than NOP or Deselect)
2
-
N/A
tCK
N/A
2
-
2
-
3
-
nCK
tXARD
Exit power down to any valid command
(other than NOP or Deselect)
2
-
N/A
tCK
N/A
2
-
2
-
3
-
nCK
tXARDS
Exit active power-down mode to Read
command (slow exit, lower power)
6-AL
-
N/A
tCK
N/A
7-AL
-
8-AL
-
10-AL
-
nCK
tAOND
ODT turn-on delay
2
2
N/A
tCK
N/A
2
2
2
2
2
2
nCK
tAON
ODT turn-on
tAC,min
tAC,max
+ 1
tAC,min
tAC,max
+ 0.7
tAC,min
tAC,max
+ 0.7
tAC,min
tAC,max
+ 2.575
ns
tAONPD
ODT turn-on (Power-Down mode)
tAC,min
+ 2
2 x tCK
+
tAC,max
+ 1
tAC,min
+ 2
2 x
tCK(avg)
+
tAC,max
+ 1
tAC,min
+ 2
2 x
tCK(avg)
+
tAC,max
+ 1
tAC,min
+ 2
2 x
tCK(avg)
+
tAC,max
+ 1
ns
tAOFD
ODT turn-off delay
2.5
2.5
N/A
tCK
N/A
2.5
2.5
2.5
2.5
2.5
2.5
nCK
tAOF
ODT turn-off
tAC,min
tAC,max
+ 0.6
tAC,min
tAC,max
+ 0.6
tAC,min
tAC,max
+ 0.6
tAC,min
tAC,max
+ 0.6
ns
NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG
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Symbol
Parameter
DDR2-533
DDR2-667
DDR2-800
DDR2-1066
Units
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
tAOFPD
ODT turn-off (Power-Down mode)
tAC,min
+ 2
2.5 x
tCK +
tACmax
+ 1
tAC,min
+ 2
2.5 x
tCK(avg)
+
tAC,max
+ 1
tAC,min
+ 2
2.5 x
tCK(avg)
+
tAC,max
+ 1
tAC,min
+ 2
2.5 x
tCK(avg)
+
tAC,max
+ 1
ns
tANPD
ODT to power down entry latency
3
-
N/A
tCK
N/A
3
-
3
-
2.5
nCK
tAXPD
ODT power down exit latency
8
-
N/A
tCK
N/A
8
-
8
-
11
-
nCK
tMRD
Mode register set command cycle time
2
-
N/A
tCK
N/A
2
-
2
-
2
-
nCK
tMOD
MRS command to ODT update delay
0
12
0
12
0
12
0
12
ns
tOIT
OCD drive mode output delay
0
12
0
12
0
12
0
12
ns
tDELAY
Minimum time clocks remain ON after CKE
asynchronously drops LOW
tIS +
tCK
+ tIH
-
tIS +
tCK(avg)
+ tIH
-
tIS +
tCK(avg)
+ tIH
-
tIS +
tCK(avg)
+ tIH
-
ns
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1Gb DDR2 SDRAM
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Reference Loads, Setup & Hold Timing Definition and Slew Rate Derating
Reference Load for Timing Measurements
The figure represents the timing reference load used in defining the relevant timing parameters of the device. It is not
intended to either a precise representation of the typical system environment nor a depiction of the actual load presented by
a production tester. System designers should use IBIS or other simulation tools to correlate the timing reference load to a
system environment. Manufacturers correlate to their production test conditions, generally a coaxial transmission line
terminated at the tester electronics. This reference load is also used for output slew rate characterization.
25 Ohm Vtt = VDDQ / 2
CK, CK DUT
Timing Reference Points
VDDQ
DQ
DQS
DQS
RDQS
RDQS
The output timing reference voltage level for single ended signals is the cross point with VTT.
The output timing reference voltage level for differential signals is the cross point of the true (e.g. DQS) and the
complement (e.g. ) signal.
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Slew rate Measurements
Output Slew rate
With the reference load for timing measurements output slew rate for falling and rising edges is measured between VTT -
250 mV and VTT + 250 mV for single ended signals. For differential signals (e.g. DQS / ) output slew rate is measured
between DQS - = - 500 mV and DQS - = + 500 mV. Output slew rate is guaranteed by design, but is not
necessarily tested on each device.
Input Slew rate - Differential signals
Input slew rate for differential signals (CK / , DQS / , RDQS / ) for rising edges are measured from CK - =
-250 mV to CK - = + 500 mV and from CK - CK = +250 mV to CK - CK = - 500mV for falling edges.
Input Slew rate - Single ended signals
Input slew rate for single ended signals (other than tis, tih, tds and tdh) are measured from dc-level to ac-level: VREF -125
mV to VREF + 250 mV for rising edges and from VREF + 125 mV to VREF - 250 mV for falling edges. For slew rate
definition of the input and data setup and hold parameters see section 8.3 of this datasheet.
Input and Data Setup and Hold Time
Timing Definition for Input Setup (tIS) and Hold Time (tIH)
Address and control input setup time (tIS) is referenced from the input signal crossing at the VIH(ac) level for a rising signal
and VIL(ac) for a falling signal applied to the device under test. Address and control input hold time (tIH) is referenced from
the input signal crossing at the VIL(dc) level for a rising signal and VIH(dc) for a falling signal applied to the device under test
V
DDQ
V
IH(ac)
min
V
IH(dc)
min
V
REF
V
IL(dc)
max
V
IL(ac)
max
V
SS
tIS tIH
tIS tIH
CK
CK
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Timing Definition for Data Setup (tDS) and Hold Time (tDH)
V
DDQ
V
IH(ac)
min
V
IH(dc)
min
V
REF
V
IL(dc)
max
V
IL(ac)
max
V
SS
tDS tDH
tDS
V
REF
tDH
DQS
DQS
DQS Differential Input
Waveform
Single-ended Input
Waveform
1. Data input setup time with differential data strobe enabled MR[bit10]=0, is referenced from the input signal crossing at
the VIH(ac) level to the differential data strobe crosspoint for a rising signal, and from the input signal crossing at the VIL(ac)
level to differential data strobe crosspoint for a falling signal applied to the device under test. Input waveform timing with
single-ended data strobe enabled MR[bit10]=1, is referenced from the input signal crossing at the VIH(ac) level to the data
strobe crossing Vref for a rising signal, and from the input signal crossing at the VIL(ac) level to the single-ended data
strobe crossing Vref for a falling signal applied to the device under test.
2. Data input hold time with differential data strobe enabled MR[bit10]=0, is referenced from the input signal crossing at the
VIL(dc) level to the differential data strobe crosspoint for a rising signal and VIH(dc) to the differential data strobe crosspoint
for a falling signal applied to the device under test. Input waveform timing with single-ended data strobe enabled
MR[bit10]=1, is referenced from the input signal crossing at the VIL(dc) level to the single-ended data strobe crossing Vref
for a rising signal and VIH(dc) to the single-ended data strobe crossing Vref for a falling signal applied to the device under
test
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Slew Rate Definition for Input and Data Setup and Hold Times
Setup (tIS & tDS) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of VIH(dc)min
and the first crossing of VIH(ac)min. Setup (tIS & tDS) nominal slew rate for a falling signal is defined as the slew rate
between the last crossing of VIL(dc)max and the first crossing of VIL(ac)max, (fig. A) If the actual signal is always earlier
than the nominal slew rate line between shaded „dc to ac region‟, use nominal slew rate for derating value. If the actual
signal is later than the nominal slew rate line anywhere between shaded „dc to ac region‟, the slew rate of a tangent line to
the actual signal from the ac level to dc level is used for derating value.(fig.B)
Hold (tIH & tDH) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of VIL(dc)max
and the first crossing of Vref. Hold (tIH & tDH) nominal slew rate for a falling signal is defined as the slew rate between the
last crossing of VIH(dc)min and the first crossing of Vref.(fig. A). If the actual signal is always later than the nominal slew
rate line between shaded „dc to Vref region‟, use nominal slew rate for derating value. If the actual signal is earlier than the
nominal slew rate line anywhere between shaded „dc to Vref region‟, the slew rate of a tangent line to the actual signal from
the dc level to Vref level is used for derating value.(fig.B)
V
SS
V
IL(ac)
max
V
IL(dc)
max
V
REF
V
IH(dc)
min
V
DDQ
V
IH(ac)
min
Delta TFS Delta TRH Delta TFH
Delta TRS
tStH
tStH
dc to ac
region
dc to ac
region
dc to Vref
region
dc to Vref
region
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V
SS
V
IL(ac)
max
V
IL(dc)
max
V
REF
V
IH(dc)
min
V
DDQ
V
IH(ac)
min
Delta TFS Delta TRH Delta TFH
Delta TRS
tStH
tStH
dc to ac
region
dc to ac
region
dc to Vref
region
dc to Vref
region
Setup Slew Rate = VIL(dc)max - VIL(ac)max
Delta TFS falling signal
Setup Slew Rate = VIH(dc)min - VIL(ac)min
Delta TRS rising signal
Hold Slew Rate = VREF - VIL(dc)max
Delta TRH rising signal
Hold Slew Rate = VIH(dc)min - VREF
Delta TFH falling signal
Setup Slew Rate =
tangent line [VIL(dc)max - VIL(ac)max]
Delta TFS
Setup Slew Rate =
tangent line [VIH(dc)min - VIL(ac)min]
Delta TRS
Hold Slew Rate =
tangent line [REF - VIL(dc)max]
Delta TRH
Hold Slew Rate =
tangent line [VIH(dc)min - VREF]
Delta TFH
falling
signal
falling
signal
rising
signal
rising
signal
NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG
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Input Setup (tIS) and Hold (tIH) Time DeratingTable
Command/Address Slew rate (V/ns)
CK, Differential Slew Rate
Units
DDR2-533
DDR2-667/800/1066
2.0 V/ns
1.5 V/ns
1.0 V/ns
2.0 V/ns
1.5 V/ns
1.0 V/ns
D tIS
D tIH
D tIS
D tIH
D tIS
D tIH
D tIS
D tIH
D tIS
D tIH
D tIS
D tIH
4.00
187
94
217
124
247
154
150
94
180
124
210
154
ps
3.50
179
89
209
119
239
149
143
89
173
119
203
149
ps
3.00
167
83
197
113
227
143
133
83
163
113
193
143
ps
2.50
150
75
180
105
210
135
120
75
150
105
180
135
ps
2.00
125
45
155
75
185
105
100
45
130
75
160
105
ps
1.50
83
21
113
51
143
81
67
21
97
51
127
81
ps
1.00
0
0
30
30
60
60
0
0
30
30
60
60
ps
0.90
-11
-14
19
16
49
46
-5
-14
25
16
55
46
ps
0.80
-25
-31
5
-1
35
29
-13
-31
17
-1
47
29
ps
0.70
-43
-54
-13
-24
17
6
-22
-54
8
-24
38
6
ps
0.60
-67
-83
-37
-53
-7
-23
-34
-83
-4
-53
26
-23
ps
0.50
-110
-125
-80
-95
-50
-65
-60
-125
-30
-95
0
-65
ps
0.40
-175
-188
-145
-158
-115
-128
-100
-188
-70
-158
-40
-128
ps
0.30
-285
-292
-255
-262
-225
-232
-168
-292
-138
-262
-108
-232
ps
0.25
-350
-375
-320
-345
-290
-315
-200
-375
-170
-345
-140
-315
ps
0.20
-525
-500
-495
-470
-465
-440
-325
-500
-295
-470
-265
-440
ps
0.15
-800
-708
-770
-678
-740
-648
-517
-708
-487
-678
-457
-648
ps
0.10
-1450
-1125
-1420
-1095
-1390
-1065
-1000
-1125
-970
-1095
-940
-1065
ps
For all input signals the total tIS (input setup time) and tIH (input hold time) required is calculated by adding the individual datasheet value
to the derating value listed in the previous table.
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Data Setup (tDS) and Hold Time (tDH) Derating Table
DQ Slewrate (V/ns)
DQS, Differential Slew Rate (DDR2-533)
4.0 V/ns
3.0 V/ns
2.0 V/ns
1.8 V/ns
1.6 V/ns
1.4 V/ns
1.2 V/ns
1.0 V/ns
0.8 V/ns
D tDS
D tDH
D tDS
D tDH
D tDS
D tDH
D tDS
D tDH
D tDS
D tDH
D tDS
D tDH
D tDS
D tDH
D tDS
D tDH
D tDS
D tDH
2.0
125
45
125
45
125
45
-
-
-
-
-
-
-
-
-
-
-
-
1.5
83
21
83
21
83
21
95
33
-
-
-
-
-
-
-
-
-
-
1.0
0
0
0
0
0
0
12
12
24
24
-
-
-
-
-
-
-
-
0.9
-
-
-11
-14
-11
-14
1
-2
13
10
25
22
-
-
-
-
-
-
0.8
-
-
-
-
-25
-31
-13
-19
-1
-7
11
5
23
17
-
-
-
-
0.7
-
-
-
-
-
-
-31
-42
-19
-30
-7
-18
5
-6
17
6
-
-
0.6
-
-
-
-
-
-
-
-
-43
-59
-31
-47
-19
-35
-7
-23
5
-11
0.5
-
-
-
-
-
-
-
-
-
-
-74
-89
-62
-77
-50
-65
-38
-53
0.4
-
-
-
-
-
-
-
-
-
-
-
-
-127
-140
-115
-128
-103
-116
1. All units in ps.
2. For all input signals the total tDS (setup time) and tDH (hold time) required is calculated by adding the individual datasheet value to the derating value listed in the previous table
DQ Slewrate (V/ns)
DQS, Differential Slew Rate (DDR2-667/800/1066)
4.0 V/ns
3.0 V/ns
2.0 V/ns
1.8 V/ns
1.6 V/ns
1.4 V/ns
1.2 V/ns
1.0 V/ns
0.8 V/ns
D tDS
D tDH
D tDS
D tDH
D tDS
D tDH
D tDS
D tDH
D tDS
D tDH
D tDS
D tDH
D tDS
D tDH
D tDS
D tDH
D tDS
D tDH
2.0
100
45
100
45
100
45
-
-
-
-
-
-
-
-
-
-
-
-
1.5
67
21
67
21
67
21
79
33
-
-
-
-
-
-
-
-
-
-
1.0
0
0
0
0
0
0
12
12
24
24
-
-
-
-
-
-
-
-
0.9
-
-
-5
-14
-5
-14
7
-2
19
10
31
22
-
-
-
-
-
-
0.8
-
-
-
-
-13
-31
-1
-19
11
-7
23
5
35
17
-
-
-
-
0.7
-
-
-
-
-
-
-10
-42
2
-30
14
-18
26
-6
38
6
-
-
0.6
-
-
-
-
-
-
-
-
-10
-59
2
-47
14
-35
26
-23
38
-11
0.5
-
-
-
-
-
-
-
-
-
-
-24
-89
-12
-77
0
-65
12
-53
0.4
-
-
-
-
-
-
-
-
-
-
-
-
-52
-140
-40
-128
-28
-116
1. All units in ps.
2. For all input signals the total tDS (setup time) and tDH (hold time) required is calculated by adding the individual datasheet value to the derating value listed in the previous table
NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG
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Overshoot and Undershoot Specification
AC Overshoot / Undershoot Specification for Address and Control Pins
Parameter
DDR2-533
DDR2-667
DDR2-800/1066
Units
Maximum peak amplitude allowed for overshoot area
0.5
0.5
0.5
V
Maximum peak amplitude allowed for undershoot area
0.5
0.5
0.5
V
Maximum overshoot area above VDD
1.0
0.8
0.66
V-ns
Maximum undershoot area below VSS
1.0
0.8
0.66
V-ns
VDD
VSS
Overshoot Area
Undershoot Area
Maximum Amplitude
Maximum Amplitude
Time (ns)
Volts (V)
AC Overshoot / Undershoot Specification for Clock, Data, Strobe and Mask Pins
Parameter
DDR2-533
DDR2-667
DDR2-800/1066
Units
Maximum peak amplitude allowed for overshoot area
0.5
0.5
0.5
V
Maximum peak amplitude allowed for undershoot area
0.5
0.5
0.5
V
Maximum overshoot area above VDD
0.28
0.23
0.23
V.ns
Maximum undershoot area below VSS
0.28
0.23
0.23
V.ns
VDDQ
VSSQ
Overshoot Area
Undershoot Area
Maximum Amplitude
Maximum Amplitude
Time (ns)
Volts (V)
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Package Dimensions
(x4/x8; 60 balls; BGA Package)
Note
13.00 +/- 0.10
0. 40 Max.
0.25 Min.
60 Ball BGA
0.80
8.00
Dia.
Min 0.40
Max
0.50
Unit : Millimeters
Min 0.10 Min 0.10
0.80 6.40
9.00+/-0.10
Pin A1 Index
: All dimensions are typical unless otherwise stated
1.20 Max.
0.10Max.
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Package Dimensions
(X16; 84 balls; BGA Package)
13.00 +/- 0.10
0.40 Max.
0. 25 Min.
1. 20 Max.
84 Ball BGA
0.80
11.20
Dia.
Min 0.40
Max
0.50
Unit : Millimeters
Min 0.10 Min 0.10
0.80 6.40
9.00+/-0.10 Pin A1 Index
0. 10Max.
NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG
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Revision Log
Rev
Date
Modification
0.1
01/2007
Preliminary Release
1.0
02/2008
Official Release
1.1
05/2008
Added Industrial grade items.
1.2
05/2008
Modified Industrial grade temperature specification.
1.3
10/2008
Operation current update.
1.4
10/2008
Added DDR2-1066 product information.
1.5
02/2009
Correct typo on page 54, 67, 68, 69 and 78.
1.6
05/2009
Add ball coplanarity on package dimension.
1.7
09/2009
Add x4/x8/x16 Block Diagram
1.8
11/2009
Added DDR2 SDRAM standard speed bins and tCK/tCK(avg), tRCD, tRP, tRAS
and tRC for corresponding bin on page 1.
NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG
1Gb DDR2 SDRAM
87
REV 1.8 CONSUMER DRAM
Nov / 2009 © NANYA TECHNOLOGY CORP. All rights reserved
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
®
Nanya Technology Corporation.
All rights reserved.
Printed in Taiwan, R.O.C., 2006
The following are trademarks of NANYA TECHNOLOGY CORPORATION in R.O.C, or other countries, or both.
NANYA and NANYA logo
Other company, product and service names may be trademarks or service marks of others.
NANYA TECHNOLOGY CORPORATION (NTC) reserves the right to make changes without notice. NTC warrants
performance of its semiconductor products and related software to the specifications applicable at the time of sale in
accordance with NTC‟s standard warranty. Testing and other quality control techniques are utilize to the extent NTC deems
necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except
those mandated by government requirements.
Certain applications using semiconductor products may involve potential risks of death, personal injury, or severe property
or environmental damage (“Critical Applications”).
NTC SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTEND, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS OR OTHER CRITICAL
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Inclusion of NTC products in such applications is understood to be fully at the risk of the customer. Use of NTC products in
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applications should be directed to NTC through a local sales office.
In order to minimize risks associated with the customer‟s applications, adequate design and operating safeguards should
be provided by customer to minimize the inherent or procedural hazards.NTC assumes no liability of applications
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