APTC60DSKM70CT1G
APTC60DSKM70CT1G – Rev 0 September, 2009
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All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
VGS = 0V,VDS = 600V Tj = 25°C 25
IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 600V Tj = 125°C 250 µA
RDS(on) Drain – Source on Resistance VGS = 10V, ID = 39A 70
mΩ
VGS(th) Gate Threshold Voltage VGS = VDS, ID = 2.7mA 2.1 3 3.9 V
IGSS Gate – Source Leakage Current VGS = ±20 V, VDS = 0V ±100 nA
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Ciss Input Capacitance 7
Coss Output Capacitance 2.56
Crss Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz 0.21
nF
Qg Total gate Charge 259
Qgs Gate – Source Charge 29
Qgd Gate – Drain Charge
VGS = 10V
VBus = 300V
ID = 39A 111
nC
Td(on) Turn-on Delay Time 21
Tr Rise Time 30
Td(off) Turn-off Delay Time 283
Tf Fall Time
Inductive Switching @ 125°C
VGS = 15V
VBus = 400V
ID = 39A
RG = 5Ω 84
ns
Eon Turn-on Switching Energy 402
Eoff Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 400V
ID = 39A, RG = 5Ω 980 µJ
Eon Turn-on Switching Energy 657
Eoff Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 400V
ID = 39A, RG = 5Ω 1206 µJ
Chopper SiC diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
VRRM Maximum Peak Repetitive Reverse Voltage 600 V
Tj = 25°C 100 400
IRM Maximum Reverse Leakage Current VR=600V Tj = 175°C 200 2000 µA
IF DC Forward Current Tc = 100°C 20 A
Tj = 25°C 1.6 1.8
VF Diode Forward Voltage IF = 20A Tj = 175°C 2 2.4 V
QC Total Capacitive Charge IF = 20A, VR = 300V
di/dt =1800A/µs 28 nC
f = 1MHz, VR = 200V 130
C Total Capacitance f = 1MHz, VR = 400V 100 pF