MRF5S4140HR3 MRF5S4140HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies from 400 to 500 MHz. The high gain and broadband performance of these
devices make them ideal for large-signal, common- source amplifier applica-
tions in 28 -volt base station equipment.
•Typical Single-Carrier N -CDMA Performance @ 465 MHz: VDD = 28 Volts,
IDQ = 1250 mA, Pout = 28 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging,
Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 21 dB
Drain Efficiency — 30%
ACPR @ 750 kHz Offset — -47.6 dBc in 30 kHz Bandwidth
•Capable of Handling 10:1 VSWR, @ 28 Vdc, 465 MHz, 140 Watts CW
Output Power
Features
•Characterized with Series Equivalent Large- Signal Impedance Parameters
•Internally Matched for Ease of Use
•Qualified Up to a Maximum of 32 VDD Operation
•Integrated ESD Protection
•Lower Thermal Resistance Package
•Low Gold Plating Thickness on Leads, 40µ″ Nominal.
•RoHS Compliant
•In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain-Source Voltage VDSS -0.5, +65 Vdc
Gate-Source Voltage VGS -0.5, +15 Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD427
2.4
W
W/°C
Storage Temperature Range Tstg - 65 to +150 °C
Case Operating Temperature TC150 °C
Operating Junction Temperature TJ200 °C
Table 2. Thermal Characteristics
Characteristic Symbol Value (1,2) Unit
Thermal Resistance, Junction to Case
Case Temperature 73°C, 140 W CW
Case Temperature 74°C, 28 W CW
RθJC
0.41
0.47
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to
access the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Document Number: MRF5S4140H
Rev. 2, 5/2006
Freescale Semiconductor
Technical Data
MRF5S4140HR3
MRF5S4140HSR3
465 MHz, 28 W AVG., 28 V
SINGLE N- CDMA
LATERAL N-CHANNEL
RF POWER MOSFETs
CASE 465A-06, STYLE 1
NI-780S
MRF5S4140HSR3
CASE 465-06, STYLE 1
NI-780
MRF5S4140HR3
Freescale Semiconductor, Inc., 2006. All rights reserved.
2
RF Device Data
Freescale Semiconductor
MRF5S4140HR3 MRF5S4140HSR3
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22-A114) 2 (Minimum)
Machine Model (per EIA/JESD22-A115) A (Minimum)
Charge Device Model (per JESD22-C101) IV (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS — — 10 µAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS — — 1 µAdc
Gate- Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS — — 1 µAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 400 µAdc)
VGS(th) 2 3 4 Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 1250 mAdc, Measured in Functional Test)
VGS(Q) 3 4 5 Vdc
Drain- Source On - Voltage
(VGS = 10 Vdc, ID = 2.42 Adc)
VDS(on) 0.1 0.2 0.3 Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 3 Adc)
gfs — 6.2 — S
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss — 2.3 — pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1250 mA, Pout = 28 W Avg. N - CDMA,
f = 465 MHz, Single-Carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz
Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain Gps 20 21 23 dB
Drain Efficiency ηD28.5 30 — %
Adjacent Channel Power Ratio ACPR — -47.6 -45 dBc
Input Return Loss IRL — -14 -9 dB
1. Part internally input matched.
MRF5S4140HR3 MRF5S4140HSR3
3
RF Device Data
Freescale Semiconductor
Figure 1. MRF5S4140HR3(SR3) Test Circuit Schematic — 460- 470 MHz
Z1 0.402″ x 0.080″ Microstrip
Z2 1.266″ x 0.080″ Microstrip
Z3 0.211″ x 0.220″ Microstrip
Z4 0.139″ x 0.220″ Microstrip
Z5 0.239″ x 0.220″ Microstrip
Z6 0.040″ x 0.640″ Microstrip
Z7 0.080″ x 0.640″ Microstrip
Z8 0.276″ x 0.640″ Microstrip
Z9 1.000″ x 0.226″ Microstrip
Z10 0.498″ x 0.630″ Microstrip
Z11 0.125″ x 0.220″ Microstrip
Z12 0.324″ x 0.220″ Microstrip
Z13 0.050″ x 0.220″ Microstrip
Z14 0.171″ x 0.080″ Microstrip
Z15 0.377″ x 0.080″ Microstrip
Z16 0.358″ x 0.080″ Microstrip
Z17 0.361″ x 0.080″ Microstrip
Z18 0.131″ x 0.080″ Microstrip
Z19 0.277″ x 0.080″ Microstrip
PCB Arlon GX-0300- 55 - 22, 0.030″, εr = 2.55
Z1
RF
INPUT
C1
C4
Z2 Z3 Z4 Z5 Z6
C5 DUT
Z8
Z10
C12
C14
RF
OUTPUT
C2
Z7
Z11 Z12 Z13 Z16 Z17 Z18 Z19
C8
B2
VBIAS
L1
C16 C17 C19 C20 C22
VSUPPLY
+++
C9 C10 C15
Z15Z14
C13
C18
+
R1
C11
C3
C6
C7
C21
+
Z9
B1
Table 5. MRF5S4140HR3(SR3) Test Circuit Component Designations and Values — 460- 470 MHz
Part Description Part Number Manufacturer
B1, B2 Ferrite Beads, Short 2743019447 Fair- Rite
C1, C14 120 pF Chip Capacitors 100B121JP500X ATC
C2, C13 0.8- 8.0 pF Variable Capacitors, Gigatrim 27291SL Johanson
C3 18 pF Chip Capacitor 100B180JP500X ATC
C4 30 pF Chip Capacitor 100B300JP500X ATC
C5 24 pF Chip Capacitor 100B240JP500X ATC
C6, C7 13 pF Chip Capacitors 100B130JP500X ATC
C8 0.02 µF, 50 V Chip Capacitor 200B203MW50B ATC
C9, C10 22 pF Chip Capacitors 100B220JP500X ATC
C11 1.0 pF Chip Capacitor 100B1R0JP500X ATC
C12 5.6 pF Chip Capacitor 100B5R6JP500X ATC
C15 1.5 pF Chip Capacitor 100B1R5JP500X ATC
C16 47 pF Chip Capacitor 100B47JP500X ATC
C17 0.56 µF, 50 V Chip Capacitor C1825C564J5GAC Kemet
C18, C19, C20, C21 10 µF, 35 V Tantalum Chip Capacitors T491D106K035AS Kemet
C22 470 µF, 63 V Electrolytic Capacitor SME63V471M12X25LL United Chemi- Con
L1 39 nH Inductor 1812SMS- 39N Coilcraft
R1 100 Ω, 1/4 W Chip Resistor (1210)
4
RF Device Data
Freescale Semiconductor
MRF5S4140HR3 MRF5S4140HSR3
Figure 2. MRF5S4140HR3(SR3) Test Circuit Component Layout — 460- 470 MHz
+
C7
CUT OUT AREA
450 MHz
Rev. 0
Ver. B
C18
B2
B1
C8
R1
C2 C5 C6
C4
C3
C1
C22
C19 C20 C21
C17
C16
L1
C10
C9 C11 C12
C13
C14 C15
MRF5S4140HR3 MRF5S4140HSR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS — 460- 470 MHz
−9
−1
−3
−5
−7
−13
Gps, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
ACPR (dBc), ALT1 (dBc)
490430
IRL
Gps
ACPR
f, FREQUENCY (MHz)
Figure 3. Single- Carrier N -CDMA Broadband Performance
@ Pout = 28 Watts Avg.
480470460450440
−70
38
32
26
−40
−50
−55
ηD, DRAIN
EFFICIENCY (%)
ηD
−60
−45
29
35
21.5
21
20
19
18
17
16
17.5
18.5
19.5
20.5
ALT1
−12
−2
−4
−6
−10
−14
Gps, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
ACPR (dBc), ALT1 (dBc)
490430
IRL
Gps
ACPR
f, FREQUENCY (MHz)
Figure 4. Single- Carrier N -CDMA Broadband Performance
@ Pout = 56 Watts Avg.
480470460450440
−60
55
45
35
−35
−45
−50
ηD, DRAIN
EFFICIENCY (%)
ηD
−55
−40
40
50
20.8
20.3
19.3
18.3
17.3
16.3
15.8
16.8
17.8
18.8
19.8
ALT1
Figure 5. Two- Tone Power Gain versus
Output Power
100
17
23
6
IDQ = 1850 mA
1550 mA
Pout, OUTPUT POWER (WATTS) PEP
21
19
10 400
Gps, POWER GAIN (dB)
650 mA
VDD = 28 Vdc, f1 = 465 MHz, f2 = 467.5 MHz
Two−Tone Measurements, 2.5 MHz Tone Spacing
950 mA
Figure 6. Third Order Intermodulation Distortion
versus Output Power
−15
IDQ = 650 mA
Pout, OUTPUT POWER (WATTS) PEP
100
−20
−25
−35
−45
10
INTERMODULATION DISTORTION (dBc)
IMD, THIRD ORDER
−10
950 mA
1850 mA
400
1550 mA
VDD = 28 Vdc, f1 = 465 MHz, f2 = 467.5 MHz
Two−Tone Measurements, 2.5 MHz Tone Spacing
22
20
18
1250 mA
−40
1250 mA
16.5 −65 −11
VDD = 28 Vdc, Pout = 28 W (Avg.)
IDQ = 1250 mA, N−CDMA IS−95
(Pilot, Sync, Paging, Traffic Codes
8 Through 13)
−8
−30
VDD = 28 Vdc, Pout = 56 W (Avg.)
IDQ = 1250 mA, N−CDMA IS−95
(Pilot, Sync, Paging, Traffic Codes
8 Through 13)
6
RF Device Data
Freescale Semiconductor
MRF5S4140HR3 MRF5S4140HSR3
TYPICAL CHARACTERISTICS — 460- 470 MHz
Figure 7. Intermodulation Distortion Products
versus Output Power
100
−60
−25
7th Order
Pout, OUTPUT POWER (WATTS) PEP
5th Order
3rd Order
−35
−40
−45
−50
200
IMD, INTERMODULATION DISTORTION (dBc)
VDD = 28 Vdc, IDQ = 1250 mA, f1 = 465 MHz
f2 = 467.5 MHz, Two−Tone Measurements
−30
10
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
10
−50
0
7th Order
TWO−TONE SPACING (MHz)
5th Order
3rd Order
−20
−30
−40
160
IMD, INTERMODULATION DISTORTION (dBc)
−10
0.1
VDD = 28 Vdc, Pout = 100 W (PEP)
IDQ = 1250 mA, Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 465 MHz
Figure 9. Pulse CW Output Power versus
Input Power
39
60 P6dB = 53.57 dBm (227 W)
Pin, INPUT POWER (dBm)
VDD = 28 Vdc, IDQ = 1250 mA
Pulsed CW, 8 µsec(on), 1 msec(off)
f = 465 MHz
56
52
44
40
3127 35
Actual
Ideal
48
19
Pout, OUTPUT POWER (dBm)
23
P3dB = 52.99 dBm (198 W)
P1dB = 52.21 dBm (166 W)
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
ALT1, CHANNEL POWER (dBc)
Figure 10. Single- Carrier N -CDMA ACPR, ALT1, Power Gain
and Drain Efficiency versus Output Power
0−75
Pout, OUTPUT POWER (WATTS) AVG.
50 −35
40 −43
30 −51
20 −59
−67
110
10
VDD = 28 Vdc, IDQ = 1250 mA, f = 465 MHz
N−CDMA IS−95 (Pilot, Sync, Paging
Traffic Codes 8 Through 13)
Gps
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
ηD
ACPR
ALT1
TC = −30_C
85_C
25_C−30_C
25_C
60
25_C
85_C
25_C−30_C
85_C
−55
MRF5S4140HR3 MRF5S4140HSR3
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS — 460- 470 MHz
ηD, DRAIN EFFICIENCY (%)
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
18 0
Pout, OUTPUT POWER (WATTS) CW
26 80
24 60
23 50
30
20
2 10 100
20
VDD = 28 Vdc
IDQ = 1250 mA
f = 465 MHz
Gps
Gps, POWER GAIN (dB)
25
10
300
TC = −30_C
−30_C
25_C
85_C
22
21
40
85_C
Figure 12. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) CW
Gps, POWER GAIN (dB)
VDD = 12 V 16 V
250
17.5
21.5
0 20050
18
100 150
20
19
21
IDQ = 1250 mA
f = 465 MHz
20 V
24 V
28 V
32 V
19
70
25_C
ηD
20.5
19.5
18.5
8
RF Device Data
Freescale Semiconductor
MRF5S4140HR3 MRF5S4140HSR3
Zo = 2 Ω
Zload
Zsource
f = 490 MHz
f = 440 MHz
f = 440 MHz
f = 490 MHz
VDD = 28 Vdc, IDQ = 1250 mA, Pout = 28 W Avg.
f
MHz
Zsource
W
Zload
W
440 0.359 - j1.19 1.35 - j0.870
445 0.389 - j1.11 1.31 - j0.743
450 0.379 - j1.03 1.34 - j0.641
455 0.360 - j0.959 1.32 - j0.539
460 0.355 - j0.873 1.31 - j0.420
465 0.352 - j0.773 1.30 - j0.274
470 0.350 - j0.710 1.29 - j0.173
475 0.350 - j0.628 1.28 - j0.044
480 0.356 - j0.540 1.29 + j0.090
485 0.355 - j0.473 1.29 + j0.195
490 0.345 - j0.388 1.28 + j0.313
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured
from drain to ground.
Figure 13. Series Equivalent Source and Load Impedance — 460- 470 MHz
Zsource Zload
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
MRF5S4140HR3 MRF5S4140HSR3
9
RF Device Data
Freescale Semiconductor
Figure 14. MRF5S4140HR3(SR3) Test Circuit Schematic — 420- 430 MHz
Z1 0.402″ x 0.080″ Microstrip
Z2 1.266″ x 0.080″ Microstrip
Z3 0.211″ x 0.220″ Microstrip
Z4 0.139″ x 0.220″ Microstrip
Z5 0.239″ x 0.220″ Microstrip
Z6 0.040″ x 0.640″ Microstrip
Z7 0.080″ x 0.640″ Microstrip
Z8 0.276″ x 0.640″ Microstrip
Z9 1.000″ x 0.226″ Microstrip
Z10 0.498″ x 0.630″ Microstrip
Z11 0.125″ x 0.220″ Microstrip
Z12 0.324″ x 0.220″ Microstrip
Z13 0.050″ x 0.220″ Microstrip
Z14 0.171″ x 0.080″ Microstrip
Z15 0.377″ x 0.080″ Microstrip
Z16 0.358″ x 0.080″ Microstrip
Z17 0.361″ x 0.080″ Microstrip
Z18 0.131″ x 0.080″ Microstrip
Z19 0.277″ x 0.080″ Microstrip
PCB Arlon GX-0300- 55 - 22, 0.030″, εr = 2.55
Z1
RF
INPUT
C1
C4
Z2 Z3 Z4 Z5 Z6
C5 DUT
Z8
Z10
C12
C14
RF
OUTPUT
C2
Z7
Z11 Z12 Z13 Z16 Z17 Z18 Z19
C8
B2
VBIAS
L1
C16 C17 C19 C20 C22
VSUPPLY
+++
C9 C10 C15
Z15Z14
C13
C18
+
R1
C11
C3
C6
C7
C21
+
Z9
B1
Table 6. MRF5S4140HR3(SR3) Test Circuit Component Designations and Values — 420- 430 MHz
Part Description Part Number Manufacturer
B1, B2 Ferrite Beads, Short 2743019447 Fair- Rite
C1, C14 120 pF Chip Capacitors 100B121JP500X ATC
C2, C13 0.8- 8.0 pF Variable Capacitors, Gigatrim 27291SL Johanson
C3 18 pF Chip Capacitor 100B180JP500X ATC
C4 39 pF Chip Capacitor 100B390JP500X ATC
C5 24 pF Chip Capacitor 100B240JP500X ATC
C6, C7 13 pF Chip Capacitors 100B130JP500X ATC
C8 0.02 µF, 50 V Chip Capacitor 200B203MW50B ATC
C9, C10 22 pF Chip Capacitors 100B220JP500X ATC
C11 1.0 pF Chip Capacitor 100B1R0JP500X ATC
C12 5.6 pF Chip Capacitor 100B5R6JP500X ATC
C15 1.5 pF Chip Capacitor 100B1R5JP500X ATC
C16 47 pF Chip Capacitor 100B47JP500X ATC
C17 0.56 µF, 50 V Chip Capacitor C1825C564J5GAC Kemet
C18, C19, C20, C21 10 µF, 35 V Tantalum Chip Capacitors T491D106K035AS Kemet
C22 470 µF, 63 V Electrolytic Capacitor SME63V471M12X25LL United Chemi- Con
L1 39 nH Inductor 1812SMS- 39N Coilcraft
R1 100 Ω, 1/4 W Chip Resistor (1210)
10
RF Device Data
Freescale Semiconductor
MRF5S4140HR3 MRF5S4140HSR3
Figure 15. MRF5S4140HR3(SR3) Test Circuit Component Layout — 420- 430 MHz
CUT OUT AREA
450 MHz
Rev. 0
Ver. A
C18
B2
B1
C8
R1
C2 C5 C6
C4
C3
C1
C22
C19 C20 C21
C17
C16
L1
C10
C9 C11 C12
C13
C14 C15
+
-
C7
MRF5S4140HR3 MRF5S4140HSR3
11
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS — 420- 430 MHz
−11
−5
−8
−17
Gps, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
ACPR (dBc), ALT1 (dBc)
440410
IRL
Gps
ACPR
f, FREQUENCY (MHz)
Figure 16. Single- Carrier N -CDMA Broadband Performance
@ Pout = 28 Watts Avg.
435430425420415
−65
33
29
25
−47
−53
ηD, DRAIN
EFFICIENCY (%)
ηD
−59
−41
27
31
21.7
21.4
20.8
20.2
19.9
19.3
19
19.6
20.5
21.1
ALT1 −14
VDD = 28 Vdc, Pout = 28 W (Avg.)
IDQ = 1250 mA, N−CDMA IS−95
(Pilot, Sync, Paging, Traffic Codes
8 Through 13)
−13
−4
−7
−10
−19
Gps, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
ACPR (dBc), ALT1 (dBc)
440410
IRL
Gps
ACPR
f, FREQUENCY (MHz)
Figure 17. Single- Carrier N -CDMA Broadband Performance
@ Pout = 56 Watts Avg.
435430425420415
−60
47
42
37
−35
−45
−50
ηD, DRAIN
EFFICIENCY (%)
ηD
−55
−40
39.5
44.5
21.5
21
20
19
18
17
16.5
17.5
18.5
19.5
20.5
ALT1 −16
VDD = 28 Vdc, Pout = 56 W (Avg.)
IDQ = 1250 mA, N−CDMA IS−95 (Pilot
Sync, Paging, Traffic Codes 8 Through 13)
12
RF Device Data
Freescale Semiconductor
MRF5S4140HR3 MRF5S4140HSR3
Zo = 5 Ω
Zload
Zsource
f = 450 MHz
f = 400 MHz
f = 450 MHz
f = 400 MHz
VDD = 28 Vdc, IDQ = 1250 mA, Pout = 28 W Avg.
f
MHz
Zsource
W
Zload
W
400 0.454 - j0.530 1.87 - j0.530
405 0.476 - j0.435 1.91 - j0.376
410 0.430 - j0.360 1.88 - j0.276
415 0.455 - j0.281 1.91 - j0.046
420 0.419 - j0.153 1.89 - j0.019
425 0.421 - j0.135 1.92 + j0.128
430 0.435 - j0.032 1.97 + j0.276
435 0.426 + j0.048 1.99 + j0.392
440 0.407 + j0.044 1.99 + j0.537
445 0.429 + j0.262 2.05 + j0.675
450 0.452 + j0.341 2.10 + j0.765
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured
from drain to ground.
Figure 18. Series Equivalent Source and Load Impedance — 420- 430 MHz
Zsource Zload
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
MRF5S4140HR3 MRF5S4140HSR3
13
RF Device Data
Freescale Semiconductor
Figure 19. MRF5S4140HR3(SR3) Test Circuit Schematic — 489- 499 MHz
Z1 0.402″ x 0.080″ Microstrip
Z2 1.266″ x 0.080″ Microstrip
Z3 0.211″ x 0.220″ Microstrip
Z4 0.139″ x 0.220″ Microstrip
Z5 0.239″ x 0.220″ Microstrip
Z6 0.040″ x 0.640″ Microstrip
Z7 0.080″ x 0.640″ Microstrip
Z8 0.276″ x 0.640″ Microstrip
Z9 1.000″ x 0.226″ Microstrip
Z10 0.498″ x 0.630″ Microstrip
Z11 0.125″ x 0.220″ Microstrip
Z12 0.324″ x 0.220″ Microstrip
Z13 0.050″ x 0.220″ Microstrip
Z14 0.171″ x 0.080″ Microstrip
Z15 0.377″ x 0.080″ Microstrip
Z16 0.358″ x 0.080″ Microstrip
Z17 0.361″ x 0.080″ Microstrip
Z18 0.408″ x 0.080″ Microstrip
PCB Arlon GX-0300- 55 - 22, 0.030″, εr = 2.55
Z1
RF
INPUT
C1
C3
Z2 Z3 Z4 Z5 Z6
C4 DUT
Z8
Z10
C11
C13
RF
OUTPUT
Z7
Z11 Z12 Z13 Z16 Z17 Z18
C7
B2
VBIAS
L1
C14 C15 C17 C18 C20
VSUPPLY
+++
C8 C9
Z15Z14
C12
C16
+
R1
C10
C2 C5
C6
C19
+
Z9
B1
Table 7. MRF5S4140HR3(SR3) Test Circuit Component Designations and Values — 489- 499 MHz
Part Description Part Number Manufacturer
B1, B2 Ferrite Beads, Short 2743019447 Fair- Rite
C1, C13 120 pF Chip Capacitors 100B121JP500X ATC
C2 18 pF Chip Capacitor 100B180JP500X ATC
C3, C4 24 pF Chip Capacitors 100B240JP500X ATC
C5, C6 13 pF Chip Capacitors 100B130JP500X ATC
C7 0.02 µF, 50 V Chip Capacitor 200B203MW50B ATC
C8, C9 22 pF Chip Capacitors 100B220JP500X ATC
C10 1.0 pF Chip Capacitor 100B1R0JP500X ATC
C11 5.6 pF Chip Capacitor 100B5R6JP500X ATC
C12 0.8- 8.0 pF Variable Capacitor, Gigatrim 27291SL Johanson
C14 47 pF Chip Capacitor 100B47JP500X ATC
C15 0.56 µF, 50 V Chip Capacitor C1825C564J5GAC Kemet
C16, C17, C18, C19 10 µF, 35 V Tantalum Capacitors T491D106K035AS Kemet
C20 470 µF, 63 V Electrolytic Capacitor SME63V471M12X25LL United Chemi- Con
L1 39 nH Inductor 1812SMS- 39N Coilcraft
R1 100 Ω, 1/4 W Chip Resistor (1210)
14
RF Device Data
Freescale Semiconductor
MRF5S4140HR3 MRF5S4140HSR3
Figure 20. MRF5S4140HR3(SR3) Test Circuit Component Layout — 489- 499 MHz
CUT OUT AREA
450 MHz
Rev. 0
Ver. A
C16
B2
B1
C7
R1
C4 C5
C3
C2
C1
C20
C17 C18 C19
C15
C14
L1 C9
C8 C10 C11
C12
C13
+
-
C6
MRF5S4140HR3 MRF5S4140HSR3
15
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS — 489- 499 MHz
−11
−5
−8
−17
Gps, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
ACPR (dBc), ALT1 (dBc)
510480
IRL
Gps
ACPR
f, FREQUENCY (MHz)
Figure 21. Single- Carrier N -CDMA Broadband Performance
@ Pout = 28 Watts Avg.
505500495490485
−65
33
29
25
−45
−55
−60
ηD, DRAIN
EFFICIENCY (%)
ηD
−50
27
31
21.7
21.4
20.8
20.2
19.9
19.3
19
19.6
20.5
21.1
ALT1 −14
VDD = 28 Vdc, Pout = 28 W (Avg.), IDQ = 1250 mA
N−CDMA IS−95 (Pilot, Sync, Paging, Traffic Codes
8 Through 13)
−12
−6
−8
−10
−16
Gps, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
ACPR (dBc), ALT1 (dBc)
510480
f, FREQUENCY (MHz)
Figure 22. Single- Carrier N -CDMA Broadband Performance
@ Pout = 56 Watts Avg.
505500495490485
−60
47
42
37
−35
−45
−50
ηD, DRAIN
EFFICIENCY (%)
−55
−40
39.5
44.5
22
21.5
20.5
19.5
18.5
17.5
17
18
19
20
21
−14
IRL
Gps
ACPR
ηD
ALT1
VDD = 28 Vdc, Pout = 56 W (Avg.), IDQ = 1250 mA
N−CDMA IS−95 (Pilot, Sync, Paging, Traffic
Codes 8 Through 13)
16
RF Device Data
Freescale Semiconductor
MRF5S4140HR3 MRF5S4140HSR3
Zo = 2 Ω
Zload
Zsource
f = 519 MHz
f = 469 MHz
f = 469 MHz
f = 519 MHz
VDD = 28 Vdc, IDQ = 1250 mA, Pout = 28 W Avg.
f
MHz
Zsource
W
Zload
W
469 0.454 - j0.742 1.08 - j0.129
474 0.510 - j0.637 1.12 + j0.043
479 0.467 - j0.581 1.07 + j0.160
484 0.495 - j0.513 1.09 + j0.294
489 0.495 - j0.457 1.12 + j0.430
494 0.478 - j0.360 1.16 + j0.573
499 0.505 - j0.295 1.18 + j0.586
504 0.502 - j0.249 1.11 + j0.653
509 0.502 - j0.048 1.07 + j0.810
514 0.499 + j0.002 1.03 + j1.01
519 0.502 + j0.003 1.03 + j1.10
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured
from drain to ground.
Zsource Zload
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Figure 23. Series Equivalent Source and Load Impedance — 489- 499 MHz
MRF5S4140HR3 MRF5S4140HSR3
17
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
210
1011
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
109
108
MTTF FACTOR (HOURS X AMPS2)
90 110 130 150 170 190100 120 140 160 180 200
1010
Figure 24. MTTF Factor versus Junction Temperature
18
RF Device Data
Freescale Semiconductor
MRF5S4140HR3 MRF5S4140HSR3
N- CDMA TEST SIGNAL
10
0.0001
100
0
PEAK−TO−AVERAGE (dB)
Figure 25. Single- Carrier CCDF N- CDMA
10
1
0.1
0.01
0.001
2468
IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13) 1.2288 MHz Channel Bandwidth
Carriers. ACPR Measured in 30 kHz Bandwidth @
±750 kHz Offset. ALT1 Measured in 30 kHz
Bandwidth @ ±1.98 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
PROBABILITY (%)
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−60
−110
−10
(dB)
−20
−30
−40
−50
−70
−80
−90
−100
+ACPR in 30 kHz
Integrated BW
1.2288 MHz
Channel BW
2.90.7 2.21.50−0.7−1.5−2.2−2.9−3.6 3.6
f, FREQUENCY (MHz)
Figure 26. Single- Carrier N -CDMA Spectrum
−ACPR in 30 kHz
Integrated BW
−ALT1 in 30 kHz
Integrated BW
+ALT1 in 30 kHz
Integrated BW
MRF5S4140HR3 MRF5S4140HSR3
19
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
CASE 465- 06
ISSUE G
NI- 780
MRF5S4140HR3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A1.335 1.345 33.91 34.16
B0.380 0.390 9.65 9.91
C0.125 0.170 3.18 4.32
D0.495 0.505 12.57 12.83
E0.035 0.045 0.89 1.14
F0.003 0.006 0.08 0.15
G1.100 BSC 27.94 BSC
H0.057 0.067 1.45 1.70
K0.170 0.210 4.32 5.33
N0.772 0.788 19.60 20.00
Q.118 .138 3.00 3.51
R0.365 0.375 9.27 9.53
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
1
3
2
D
G
K
C
E
H
S
F
S0.365 0.375 9.27 9.52
M0.774 0.786 19.66 19.96
aaa 0.005 REF 0.127 REF
bbb 0.010 REF 0.254 REF
ccc 0.015 REF 0.381 REF
Q2X
M
A
M
bbb B M
T
M
A
M
bbb B M
T
B
B
(FLANGE)
SEATING
PLANE
M
A
M
ccc B M
T
M
A
M
bbb B M
T
AA
(FLANGE)
T
N(LID)
M(INSULATOR)
M
A
M
aaa B M
T
(INSULATOR)
R
M
A
M
ccc B M
T
(LID)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.805 0.815 20.45 20.70
B0.380 0.390 9.65 9.91
C0.125 0.170 3.18 4.32
D0.495 0.505 12.57 12.83
E0.035 0.045 0.89 1.14
F0.003 0.006 0.08 0.15
H0.057 0.067 1.45 1.70
K0.170 0.210 4.32 5.33
M0.774 0.786 19.61 20.02
R0.365 0.375 9.27 9.53
STYLE 1:
PIN 1. DRAIN
2. GATE
5. SOURCE
1
2
D
K
C
E
H
F
3
U
(FLANGE)
4X
Z
(LID)
4X
bbb 0.010 REF 0.254 REF
ccc 0.015 REF 0.381 REF
aaa 0.005 REF 0.127 REF
S0.365 0.375 9.27 9.52
N0.772 0.788 19.61 20.02
U−−− 0.040 −−− 1.02
Z−−− 0.030 −−− 0.76
M
A
M
bbb B M
T
B
B
(FLANGE)
2X
SEATING
PLANE
M
A
M
ccc B M
T
M
A
M
bbb B M
T
AA
(FLANGE)
T
N(LID)
M(INSULATOR)
M
A
M
ccc B M
T
M
A
M
aaa B M
T
R(LID)
S(INSULATOR)
CASE 465A- 06
ISSUE H
NI- 780S
MRF5S4140HSR3
20
RF Device Data
Freescale Semiconductor
MRF5S4140HR3 MRF5S4140HSR3
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Document Number: MRF5S4140H
Rev. 2, 5/2006
