ZXMN10A11G 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS= 100V; RDS(ON)= 0.35 ID= 2.4A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES SOT223 * Low on-resistance * Fast switching speed * Low threshold * Low gate drive * SOT223 package APPLICATIONS * DC - DC converters * Power management functions * Relay and solenoid driving * Motor control ORDERING INFORMATION DEVICE REEL SIZE TAPE WIDTH QUANTITY PER REEL ZXMN10A11GTA 7" 12mm 1000 units ZXMN10A11GTC 13" 12mm 4000 units PINOUT DEVICE MARKING * ZXMN 10A11 Top View ISSUE 5 - DECEMBER 2004 1 SEMICONDUCTORS ZXMN10A11G ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Drain-source voltage V DSS LIMIT UNIT 100 V 20 V ID 2.4 1.9 1.7 A Pulsed drain current (c) I DM 7.9 A Continuous source current (body diode) (b) IS 4.6 A Gate-source voltage V GS Continuous drain current V GS =10V; V GS =10V; V GS =10V; T A =25C (b) T A =70C (b) T A =25C (a) (c) I SM 7.9 A (a) PD 2 16 W mW/C Power dissipation at T A =25C (b) Linear derating factor PD 3.9 31 W mW/C Operating and storage temperature range T j :T stg -55 to +150 C VALUE UNIT Pulsed source current (body diode) Power dissipation at T A =25C Linear derating factor THERMAL RESISTANCE PARAMETER SYMBOL (a) R JA 62.5 C/W Junction to ambient (b) R JA 32 C/W Junction to ambient NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t10 secs. (c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width = 300s - pulse width limited by maximum junction temperature. Refer to transient Thermal Impedance graph. ISSUE 5 - DECEMBER 2004 SEMICONDUCTORS 2 ZXMN10A11G CHARACTERISTICS ISSUE 5 - DECEMBER 2004 3 SEMICONDUCTORS ZXMN10A11G ELECTRICAL CHARACTERISTICS (at TA = 25C unless otherwise stated) PARAMETER SYMBOL MIN. Drain-source breakdown voltage V (BR)DSS 100 Zero gate voltage drain current I DSS Gate-body leakage I GSS Gate-source threshold voltage V GS(th) TYP. MAX. UNIT CONDITIONS STATIC Static drain-source On-State resistance Forward transconductance (3) (1) 2.0 R DS(on) V I D =250A, V GS =0V 1 A V DS =100V, V GS =0V 100 nA V GS =20V, V DS =0V 4.0 V I =250A, V DS = V GS D 0.35 0.45 V GS =10V, I D =2.6A V GS =6V, I D =1.3A V DS =15V,I D =2.6A g fs 4 S Input capacitance C iss 274 pF Output capacitance C oss 21 pF Reverse transfer capacitance C rss 11 pF Turn-on delay time t d(on) 2.7 ns Rise time tr 1.7 ns Turn-off delay time t d(off) 7.4 ns Fall time tf 3.5 ns Gate charge Qg 3 nC DYNAMIC (3) SWITCHING V DS =50 V, V GS =0V, f=1MHz (2) (3) V DD =50V, I D =1A R G 6.0, V GS =10V V DS =50V, V GS =5V, I D =2.5A Total gate charge Qg 5.4 nC Gate-source charge Q gs 1.4 nC Gate-drain charge Q gd 1.5 nC Diode forward voltage (1) V SD 0.85 Reverse recovery time (3) t rr Reverse recovery charge (3) Q rr V DS =50V,V GS =10V, I D =2.5A SOURCE-DRAIN DIODE 0.95 V T J =25C, I S =1.85A, V GS =0V 26 ns 30 nC T J =25C, I F =1.0A, di/dt= 100A/s NOTES: (1) Measured under pulsed conditions. Width 300s. Duty cycle 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. ISSUE 5 - DECEMBER 2004 SEMICONDUCTORS 4 ZXMN10A11G TYPICAL CHARACTERISTICS ISSUE 5 - DECEMBER 2004 5 SEMICONDUCTORS ZXMN10A11G TYPICAL CHARACTERISTICS ISSUE 5 - DECEMBER 2004 SEMICONDUCTORS 6 ZXMN10A11G PACKAGE OUTLINE PACKAGE DIMENSIONS Millimeters Inches DIM Millimeters Inches DIM Min Max Min Max Min Max Min Max A - 1.80 - 0.071 e 2.30 BSC 0.0905 BSC A1 0.02 0.10 0.0008 0.004 e1 4.60 BSC 0.181 BSC b 0.66 0.84 0.026 0.033 E 6.70 7.30 0.264 0.287 b2 2.90 3.10 0.114 0.122 E1 3.30 3.70 0.130 0.146 C 0.23 0.33 0.009 0.013 L 0.90 - 0.355 - D 6.30 6.70 0.248 0.264 - - - - - (c) Zetex Semiconductors plc 2004 Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex plc Lansdowne Road, Chadderton Oldham, OL9 9TY United Kingdom Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 5 - DECEMBER 2004 7 SEMICONDUCTORS