SEMICONDUCTORS
SUMMARY
V(BR)DSS= 100V; RDS(ON)= 0.35 ID= 2.4A
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilises a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makesthemidealforhighefficiency,lowvoltage,powermanagementapplications.
FEATURES
•Low on-resistance
•Fast switching speed
•Low threshold
•Low gate drive
•SOT223 package
APPLICATIONS
•DC - DC converters
•Power management functions
•Relay and solenoid driving
•Motor control
DEVICE MARKING
•ZXMN
10A11
ZXMN10A11G
ISSUE 5 - DECEMBER 2004
100V N-CHANNEL ENHANCEMENT MODE MOSFET
1
Top View
PINOUT
SOT223
DEVICE REEL
SIZE TAPE
WIDTH QUANTITY
PER REEL
ZXMN10A11GTA 7” 12mm 1000 units
ZXMN10A11GTC 13” 12mm 4000 units
ORDERING INFORMATION
ZXMN10A11G
SEMICONDUCTORS
ISSUE 5 - DECEMBER 2004
2
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage VDSS 100 V
Gate-source voltage VGS 20 V
Continuous drain current VGS=10V; TA=25°C(b)
VGS=10V; TA=70°C(b)
VGS=10V; TA=25°C(a)
ID2.4
1.9
1.7
A
Pulsed drain current (c) IDM 7.9 A
Continuous source current (body diode) (b) IS4.6 A
Pulsed source current (body diode)(c) ISM 7.9 A
Power dissipation at TA=25°C (a)
Linear derating factor PD2
16 W
mW/°C
Power dissipation at TA=25°C (b)
Linear derating factor PD3.9
31 W
mW/°C
Operating and storage temperature range Tj:Tstg -55 to +150 °C
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL VALUE UNIT
Junction to ambient (a) RθJA 62.5 °C/W
Junction to ambient (b) RθJA 32 °C/W
THERMAL RESISTANCE
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width = 300s - pulse width limited by maximum junction temperature. Refer to
transient Thermal Impedance graph.
ZXMN10A11G
SEMICONDUCTORS
ISSUE 5 - DECEMBER 2004
3
CHARACTERISTICS
ZXMN10A11G
SEMICONDUCTORS
ISSUE 5 - DECEMBER 2004
4
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
STATIC
Drain-source breakdown voltage V(BR)DSS 100 V ID=250A, VGS=0V
Zero gate voltage drain current IDSS 1AV
DS=100V, VGS=0V
Gate-body leakage IGSS 100 nA VGS=±20V, VDS=0V
Gate-source threshold voltage VGS(th) 2.0 4.0 V ID=250A, VDS=V
GS
Static drain-source On-State resistance (1) RDS(on) 0.35
0.45 ⍀
⍀
VGS=10V, ID=2.6A
VGS=6V, ID=1.3A
Forward transconductance (3) gfs 4SV
DS=15V,ID=2.6A
DYNAMIC (3)
Input capacitance Ciss 274 pF VDS=50V,V
GS=0V,
f=1MHz
Output capacitance Coss 21 pF
Reverse transfer capacitance Crss 11 pF
SWITCHING(2) (3)
Turn-on delay time td(on) 2.7 ns
VDD =50V, ID=1A
RG≅6.0⍀,V
GS=10V
Rise time tr1.7 ns
Turn-off delay time td(off) 7.4 ns
Fall time tf3.5 ns
Gate charge Qg3nCV
DS=50V, VGS=5V,
ID=2.5A
Total gate charge Qg5.4 nC VDS=50V,VGS=10V,
ID=2.5A
Gate-source charge Qgs 1.4 nC
Gate-drain charge Qgd 1.5 nC
SOURCE-DRAIN DIODE
Diode forward voltage (1) VSD 0.85 0.95 V TJ=25°C, IS=1.85A,
VGS=0V
Reverse recovery time (3) trr 26 ns TJ=25°C, IF=1.0A,
di/dt= 100A/μs
Reverse recovery charge (3) Qrr 30 nC
ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated)
NOTES:
(1) Measured under pulsed conditions. Width ≤300μs. Duty cycle ≤2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
TYPICAL CHARACTERISTICS
ZXMN10A11G
SEMICONDUCTORS
ISSUE 5 - DECEMBER 2004
5
ZXMN10A11G
SEMICONDUCTORS
ISSUE 5 - DECEMBER 2004
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TYPICAL CHARACTERISTICS
ZXMN10A11G
SEMICONDUCTORS
ISSUE 5 - DECEMBER 2004
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Europe
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
Americas
Zetex Inc
700 Veterans Memorial Hwy
Hauppauge, NY 11788
USA
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
Asia Pacific
Zetex (Asia) Ltd
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Corporate Headquarters
Zetex plc
Lansdowne Road, Chadderton
Oldham, OL9 9TY
United Kingdom
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
These offices are supported by agents and distributors in major countries world-wide.
Thispublicationisissued toprovide outlineinformation onlywhich (unlessagreed bythe Companyin writing)may notbe used,applied orreproduced
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to www.zetex.com
© Zetex Semiconductors plc 2004
PACKAGE OUTLINE
DIM Millimeters Inches DIM Millimeters Inches
Min Max Min Max Min Max Min Max
A - 1.80 - 0.071 e 2.30 BSC 0.0905 BSC
A1 0.02 0.10 0.0008 0.004 e1 4.60 BSC 0.181 BSC
b 0.66 0.84 0.026 0.033 E 6.70 7.30 0.264 0.287
b2 2.90 3.10 0.114 0.122 E1 3.30 3.70 0.130 0.146
C 0.23 0.33 0.009 0.013 L 0.90 - 0.355 -
D 6.30 6.70 0.248 0.264 - ----
PACKAGE DIMENSIONS
