Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
High Definition CRT
Display Video Output Applications
Ordering number:ENN4132
2SA1850/2SC4824
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82003TN (KT)/91098HA (KT)/5122MH (KOTO) No.4132–1/4
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
OBC 021)–(V
egatloVrettimE-ot-rotcelloCV
OEC 021)–(V
egatloVesaB-ot-rettimEV
OBE 3)–(V
tnerruCrotcelloCI
C002)–(Am
)esluP(tnerruCrotelloCI
PC 004)–(Am
noitapissiDrotcelloCP
C3.1W
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
( ) : 2SA1850
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Package Dimensions
unit:mm
2084B
[2SA1850/2SC4824]
Applications
· High Definition CRT Display Video Output Applica-
tions, W ide-Band Amplifier.
Features
· Adoption of FBET process.
· High Gain Bandwidth product (fT=400MHz).
· High breakdown voltage (VCEO=120V).
· Small reverse transfer capacitance and excellent
high-frequency characteristic :
Cre=1.7pF/NPN, 2.2pF/PNP.
· Usage of radial taping to meet automatic mounting.
˚C
˚C
Electrical Characteristics at Ta = 25˚C
1 : Emitter
2 : Collector
3 : Base
SANYO : FLP
retemaraPlobmySsnoitidnoC sgnitaR tinU
nimpytxam
tnerruCffotuCrotcelloCI
OBC VBC I,V08)–(= E0=1.0)–(Aµ
tnerruCffotuCrettimEI
OBE VBE I,V2)–(= C0=0.1)–(Aµ
niaGtnerruCCD hEF 1V
EC I,V01)–(= CAm01)–(=*06*023
h2EF VEC I,V01)–(= CAm001)–(=02
10.5
1.2
1.6
0.5
2.5 2.5
4.5
1.2
1.4
2.6
8.5
1.0
7.5
1.9
0.5
123
* : The 2SA1850/2SC4824 are classified by 10mA hFE as follows : Continued on next page.
knaRDEF
hEF 021ot06002ot001023ot061
2SA1850/2SC4824
No.4132–2/4
retemaraPlobmySsnoitidnoC sgnitaR tinU
nimpytxam
tcudorPhtdiwdnaBniaGf
TVEC I,V01)–(= CAm05)–(=004zHM
ecnaticapaCtuptuOC
bo VBC zHM1=f,V03)–(= )8.2(Fp
1.2Fp
ecnaticapaCrefsnarTesreveRC
er VBC zHM1=f,V03)–(= )2.2(Fp
7.1Fp
egatloVnoitarutaSrettimE-ot-rotcelloCV
)tas(EC ICI,Am03)–(= BAm3)–(=0.1)–(V
egatloVnoitarutaSrettimE-ot-esaBV
)tas(EB ICI,Am03)–(= BAm3)–(=0.1)–(V
IB=0
2SA1850 2SC4824
--20
00 --4 --8 --12 --16 --20
IC -- VCE
ITR04875
5
100
7
5
7
3
2
3
2
10
--10 --100
hFE -- IC
ITR04878
Ta=75°C
2SA1850
VCE= --10V
ITR04879
25
°C
Ta=75°
C
--25°
C
25°C
--25°C
--100
--40
--60
--80
2SA1850
VCE= --10V
--40
00 --0.2 --0.4 --0.6 --0.8
IC -- VBE
ITR04877
--1.2--1.0
--240
--120
--160
--200
--80
--0.9mA
--0.8mA
--0.7mA
--0.6mA
--0.4mA
--0.2mA
--0.3mA
--0.1mA
--1.0mA
--0.5mA
IB=0
20
0048121620
IC -- VCE
ITR04876
100
40
60
80
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
25°
C
Ta=75°C
--25°
C
2SC4824
VCE=10V
40
00 0.2 0.4 0.6 0.8
IC -- VBE
1.21.0
240
120
160
200
80
23 57 23 57 23
5
100
7
5
7
3
2
2
10
10 100
hFE -- IC
Ta=75°C
2SC4824
VCE=10V
ITR04880
25°
C
--25
°
C
23 57 23 57 23
Collector-to-Emitter Voltage, VCE –V
Collector Current, IC– mA
Collector-to-Emitter Voltage, VCE –V
Collector Current, IC– mA
Base-to-Emitter Voltage, VBE –V
Collector Current, IC– mA
Base-to-Emitter Voltage, VBE –V
Collector Current, IC– mA
DC Current Gain, hFE
Collector Current, IC– mA
DC Current Gain, hFE
Collector Current, IC– mA
Continued from preceding page.
2SA1850/2SC4824
No.4132–3/4
7
5
5
3
2
7
2
1.0
10
57 2 3 57
--1.0 --10 23 57
--100
ITR04883
Cob -- VCB
Ta=75
°C
--
25°
C
25
°
C
5
7
5
3
2
7
3
2
--100
--1000
2 3 57 2 3 57 2
--10 --100
ITR04887
VCE(sat) -- IC
2SA1850
f=1MHz
2SA1850
IC / IB=10
7
5
5
3
2
7
2
1.0
10
57 2 3 57
--1.0 --10 23 57
--100
ITR04885
Cre -- VCB
2SA1850
f=1MHz
7
5
5
3
2
7
2
1.0
10
57 2 3 57
1.0 10 23 57
100
ITR04884
Cob -- VCB
2SC4824
f=1MHz
7
5
5
3
2
7
2
1.0
10
57 2 3 57
1.0 10 23 57
100
ITR04886
Cre -- VCB
2SC4824
f=1MHz
Ta=75°C
--25°
C
25°
C
5
7
5
3
2
7
2
100
1000
23 57 23 357 2
10 100 ITR04888
VCE(sat) -- IC
2SC4824
IC / IB=10
1000
100
3
5
7
3
5
7
2
357235722
--100--1.0 --10
fT -- IC
ITR04881
2SA1850
VCE= --10V
1000
100
3
5
7
3
5
7
2
357 35722
10010
fT -- IC
ITR04882
2SC4824
VCE=10V
Gain-Bandwidth Product, fT– MHz
Collector Current, IC– mA
Gain-Bandwidth Product, fT– MHz
Collector Current, IC– mA
Output Capacitance, Cob -- pF
Collector-to-Base Voltage, VCB -- V
Output Capacitance, Cob -- pF
Collector-to-Base Voltage, VCB -- V
Collector Current, IC– mA
Collector-to-Emitter
Saturation Voltage, VCE(sat) – V
Collector Current, IC– mA
Collector-to-Emitter
Saturation Voltage, VCE(sat) – V
Reverse Transfer Capacitance, Cre -- pF
Collector-to-Base Voltage, VCB -- V
Reverse Transfer Capacitance, Cre -- pF
Collector-to-Base Voltage, VCB -- V
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of August, 2003. Specifications and information herein are subject to
change without notice.
2SA1850/2SC4824
PS No.4132–4/4
A S O
100
10
7
7
5
5
3
2
7
5
3
2
57 2 10010
357323
ITR04891
PC -- Ta
1.4
1.3
1.2
1.0
1.6
0.8
0.6
0.4
0.2
020 40 60 80 100 120 140 1600
ITR04892
2SA1850 / 2SC4824 2SA1850 / 2SC4824
DC operation
1ms
10ms
IC=200mA
ICP=400mA
Ta=25°C
Single pulse
(For PNP, minus sign is omitted.)
VBE(sat) -- IC
Ta= --25°C
25°C
75
°C
5
7
5
3
3
2
1.0
23 57 23 357 2
10 100 ITR04890
VBE(sat) -- IC
2SC4824
IC / IB=10
Ta= --25
°C
75°
C
25
°C
5
5
7
3
3
2
--1.0
23 57 23 357 2
--10 --100 ITR04889
2SA1850
IC / IB=10
Collector Current, IC– mA
Base-to-Emitter
Saturation Voltage, VBE(sat) – V
Collector Current, IC– mA
Base-to-Emitter
Saturation Voltage, VBE(sat) – V
Collector-to-Emitter Voltage, VCE –V
Collector Current, IC– mA
Collector Dissipation, PC– W
Ambient Temperature, Ta – ˚C
