SOT223 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 - FEBRUARY 1996 ✪
FEATURES:
*V
DS - 200V
*R
DS(ON) - 10Ω
PARTMARKIN G DETAIL - ZVN2120
ABSOLUTE MAXI MUM RATI NGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage VDS 200 V
Continuous D rain Current at Tamb=25°C ID320 mA
Pulsed Drain Current IDM 2A
Gate-Source Voltage VGS ± 20 V
Power Dissipa tion at Tamb=25°C Ptot 2W
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRIC AL CH AR ACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage BVDSS 200 V ID=1mA, VGS=0V
Gate-Sou rce Thre shold Voltage VGS(th) 13VI
D=1mA, VDS= VGS
Gate-Body Leakage IGSS 20 nA VGS=± 20V, VDS=0V
Zero Ga te Voltage Drain
Current IDSS 10
100 µA
µAVDS=200V, VGS=0V
VDS=160V, VGS=0V,
T=125°C(2)
On-State Drain Current(1) ID(on) 500 mA VDS=25V, VGS=10V
Static Drain-Source On-State
Resistance (1) RDS(on) 10 ΩVGS=10V, ID=250mA
Forward Transconductance(1)(2) gfs 100 mS VDS=25V, ID=250mA
Input Capacitance (2) Ciss 85 pF
Common Source O utput
Capacitance (2) Coss 20 pF VDS=25V, VGS=0 V, f=1 MHz
Reverse Transfer Cap acitan ce (2) C rss 7pF
Turn-On De lay Time (2)(3) td(on) 8ns
VDD≈25V, ID=250mA
Rise Time (2)(3) tr8ns
Turn-Off De lay Time (2)(3) td(off) 20 ns
Fall Time (2)(3) tf12 ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
ZVN2120G
3 - 390
D
D
S
G