SOT223 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 - FEBRUARY 1996 ✪
FEATURES:
*V
DS - 200V
*R
DS(ON) - 10Ω
PARTMARKIN G DETAIL - ZVN2120
ABSOLUTE MAXI MUM RATI NGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage VDS 200 V
Continuous D rain Current at Tamb=25°C ID320 mA
Pulsed Drain Current IDM 2A
Gate-Source Voltage VGS ± 20 V
Power Dissipa tion at Tamb=25°C Ptot 2W
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRIC AL CH AR ACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage BVDSS 200 V ID=1mA, VGS=0V
Gate-Sou rce Thre shold Voltage VGS(th) 13VI
D=1mA, VDS= VGS
Gate-Body Leakage IGSS 20 nA VGS=± 20V, VDS=0V
Zero Ga te Voltage Drain
Current IDSS 10
100 µA
µAVDS=200V, VGS=0V
VDS=160V, VGS=0V,
T=125°C(2)
On-State Drain Current(1) ID(on) 500 mA VDS=25V, VGS=10V
Static Drain-Source On-State
Resistance (1) RDS(on) 10 ΩVGS=10V, ID=250mA
Forward Transconductance(1)(2) gfs 100 mS VDS=25V, ID=250mA
Input Capacitance (2) Ciss 85 pF
Common Source O utput
Capacitance (2) Coss 20 pF VDS=25V, VGS=0 V, f=1 MHz
Reverse Transfer Cap acitan ce (2) C rss 7pF
Turn-On De lay Time (2)(3) td(on) 8ns
VDD≈25V, ID=250mA
Rise Time (2)(3) tr8ns
Turn-Off De lay Time (2)(3) td(off) 20 ns
Fall Time (2)(3) tf12 ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
ZVN2120G
3 - 390
D
D
S
G
ZVN2120GZVN2120G
3 - 391 3 - 392
TYPICAL CHARACTERISTICS
Output Characteristics
VDS - Drain Source Voltage (Volts)
246810
01020304050
Saturation Characteristics
VDS - Drain Source Voltage (Volts)
I
D(on)
-On-State Drain Current (Amps)
I
D(on)
-On-State Drain Current (Amps)
Normalised RDS(on) and VGS(th) v Temperature
Tj-Junction Temperature ( °C)
Normalised R
DS(on)
and V
GS(th)
-40 -20 0 20 40 60 80 120
100 140 160
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.8
Drain-Source Resistance R
DS(on)
Gate Threshold Voltage V
GS(TH)
ID=250mA
VGS=10V
ID=1mA
VGS=VDS
180
0
0.8
0.4
1.2
2.0
1.6
5V
4V
6V
3V
5V
4V
8V
6V
7V
VGS=
0
0.8
0.4
1.0
1.4
1.2
VDS-Drain Source Voltage (Volts)
Voltage Saturation Characteristics
VGS-Gate Source Voltage (Volts)
0
20
12
4
8
16
02 4 6 8 10
ID=
1.0A
0.5A
0.1A
8V
7V
VGS=10V
2V
10V
2V
0.6
0.2
0
Transfer Characteristics
I
D(On)
-On-State Drain Current (Amps)
VGS-Gate Source Voltage (Volts)
012345678910
VDS=
25V
0.8
0
1.6
1.2
0.6
1.4
1.0
0.4
0.2
10V
On-resistance vs gate-source voltage
VGS-Gate Source Voltage (Volts)
RDS(ON) -Drain Source Resistance (Ω)
1234567891020
ID=
1.0A
0.5A
0.1A
1
10
100
3V
TYP I CAL CHA RACTERIS TI CS
Transconductance v drain current
ID(on)- Drain Current (Amps)
g
fs
-Transconductance (mS)
g
fs
-Transconductance (mS)
Q-Charge (nC)
Transconductance v gate-source voltag e
VGS-Gate Source V ol tag e (Volts)
V
GS
-Gate Source Voltage (Volts)
Gate charge v ga te-so urce voltage
0
10
8
6
2
0
4
12
14
16 VDS=
50V
ID=700mA
100V
150V
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
00.2 0.4 0.6 0.8 1.0
VDS=25V
0
100
200
400
300
500
0246810
VDS=25V
0
300
200
100
400
500
VDS-Drain Source Voltage (Volts)
Capacitance v drain-source v oltage
C-Capacitance (pF)
Coss
Ciss
Crss
010 20 30 40 50
60
40
20
80
100
1.2 1.4 1.6 1.8 2.0
ZVN2120GZVN2120G
3 - 391 3 - 392
TYPICAL CHARACTERISTICS
Output Characteristics
VDS - Drain Source Voltage (Volts)
246810
01020304050
Saturation Characteristics
VDS - Drain Source Voltage (Volts)
I
D(on)
-On-State Drain Current (Amps)
I
D(on)
-On-State Drain Current (Amps)
Normalised RDS(on) and VGS(th) v Temperature
Tj-Junction Temperature ( °C)
Normalised R
DS(on)
and V
GS(th)
-40 -20 0 20 40 60 80 120
100 140 160
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.8
Drain-Source Resistance R
DS(on)
Gate Threshold Voltage V
GS(TH)
ID=250mA
VGS=10V
ID=1mA
VGS=VDS
180
0
0.8
0.4
1.2
2.0
1.6
5V
4V
6V
3V
5V
4V
8V
6V
7V
VGS=
0
0.8
0.4
1.0
1.4
1.2
VDS-Drain Source Voltage (Volts)
Voltage Saturation Characteristics
VGS-Gate Source Voltage (Volts)
0
20
12
4
8
16
02 4 6 8 10
ID=
1.0A
0.5A
0.1A
8V
7V
VGS=10V
2V
10V
2V
0.6
0.2
0
Transfer Characteristics
I
D(On)
-On-State Drain Current (Amps)
VGS-Gate Source Voltage (Volts)
012345678910
VDS=
25V
0.8
0
1.6
1.2
0.6
1.4
1.0
0.4
0.2
10V
On-resistance vs gate-source voltage
VGS-Gate Source Voltage (Volts)
RDS(ON) -Drain Source Resistance (Ω)
1234567891020
ID=
1.0A
0.5A
0.1A
1
10
100
3V
TYP I CAL CHA RACTERIS TI CS
Transconductance v drain current
ID(on)- Drain Current (Amps)
g
fs
-Transconductance (mS)
g
fs
-Transconductance (mS)
Q-Charge (nC)
Transconductance v gate-source voltag e
VGS-Gate Source V ol tag e (Volts)
V
GS
-Gate Source Voltage (Volts)
Gate charge v ga te-so urce voltage
0
10
8
6
2
0
4
12
14
16 VDS=
50V
ID=700mA
100V
150V
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
00.2 0.4 0.6 0.8 1.0
VDS=25V
0
100
200
400
300
500
0246810
VDS=25V
0
300
200
100
400
500
VDS-Drain Source Voltage (Volts)
Capacitance v drain-source v oltage
C-Capacitance (pF)
Coss
Ciss
Crss
010 20 30 40 50
60
40
20
80
100
1.2 1.4 1.6 1.8 2.0
