CY62126BV
Document #: 38-05154 Rev. ** Page 4 of 10
Switching Characteristics[5] Over the Oper atin g Range
62126BV–55 62126BV–70
Parameter Description Min. Max. Min. Max. Unit
READ CYCLE
tRC Read Cycle Time 55 70 ns
tAA Address to Data Valid 55 70 ns
tOHA Data Hold from Address Change 10 10 ns
tACE CE LOW to Data Valid 55 70 ns
tDOE OE LOW to Data Valid 25 35 ns
tLZOE OE LOW to Low Z[7] 5 5 ns
tHZOE OE HIGH to High Z[6, 7] 20 25 ns
tLZCE CE LOW to Low Z[7] 10 10 ns
tHZCE CE HIGH to High Z[6, 7] 20 25 ns
tPU CE LOW to Power-Up 0 0ns
tPD CE HIGH to Power-Down 55 70 ns
tDBE Byte Enable to Data Valid 2 5 35 ns
tLZBE Byte Enable to LOW Z[7] 5 5 ns
tHZBE Byte Disable to HIGH Z[6,7] 20 25 ns
WRITE CYCLE[8]
tWC Write Cycle Time 55 70 ns
tSCE CE LO W to Write End 45 60 ns
tAW Address Set-Up to Write End 45 60 ns
tHA Address Hold from Write End 0 0ns
tSA Address Set-Up to Write Start 0 0ns
tPWE WE Pulse Width 40 50 ns
tSD Data Set-Up to Write End 25 30 ns
tHD Data Hold from Write End 0 0ns
tLZWE WE HIGH to Low Z[7] 5 5 ns
tHZWE WE LOW to High Z[6,7] 25 25 ns
tBW Byte Enable to End of Write 45 60 ns
Notes:
5. Test conditions assume signal transition time of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, an d ou tpu t lo adi ng o f t he sp eci fie d
IOL/IOH and 30-pF l oad capa citan ce.
6. tHZOE, tHZCE, tHZWE, and tHZBE are spec ified w ith a l oad c apaci tance of 5 pF a s in par t (b) of A C Test Loads. T ransi tion i s measure d ±500 mV from stead y-state volt age.
7. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, tHZWE is less than tLZWE, and tHZBE is less than tLZBE, for any given device.
8. The internal write time of the memory is defined by the overlap of CE LOW and WE LOW . CE and WE must be LOW t o initiate a write, and the transiti on of any o f these
signal s can t erminat e the write. The input data set-up and h old t iming s hould be referenc ed to the lead ing e dge of the sig nal t hat t erminates the w rite. R efer t o trut h table for
further con ditions from BHE and BLE.