2N3011 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V(BR)CEO (V)12 V(BR)CBO (V)30 I(C) Max. (A)200m Absolute Max. Power Diss. (W)360m Minimum Operating Temp (oC) Maximum Operating Temp (oC)175o I(CBO) Max. (A).40ux @V(CBO) (V) (Test Condition) h(FE) Max. Current gain. @I(C) (A) (Test Condition)10m @V(CE) (V) (Test Condition).35 f(T) Min. (Hz) Transition Freq400M @I(C) (A) (Test Condition) @V(CE) (V) (Test Condition) Power Gain Min. (dB) @I(C) (A) (Test Condition) @V(CE) (V) (Test Condition) @Freq. (Hz) (Test Condition) Noise Figure Min. (dB) @I(C) (A) (Test Condition)