146
Darlington
2SD2083
I
C
–
V
CE
Characteristics
(Typical)
h
FE
–
I
C
Characteristics
(Typical)
θ
j-a
–
t
Characteristics
I
C
–
V
BE
Temperature
Characteristics
(Typical)
V
CE
(sat)
–
I
B
Characteristics
(Typical)
Pc
–
T
a
Derating
0
0
20
30
10
40
2
135
46
Collector-Emitter Voltage V
CE
(V)
Collector Current I
C
(A)
3mA
5mA
8mA
12mA
30mA
20mA
I
B
=1.5mA
Safe Operating Area
(Single Pulse)
f
T
–
I
E
Characteristics
(Typical)
0
3
2
1
1
0.5
10
5
500
100
50
Base Current I
B
(mA)
Collector-Emitter Saturation Voltage V
CE(sat)
(V)
6A
12A
I
C
=25A
0.2
0.5
1
5
10
40
5000
20000
10000
1000
500
100
Collector Current I
C
(A)
DC Current Gain h
FE
(V
CE
=4V)
Typ
–0.5
–0.1
–1
–5
–10
0
50
100
Cut-off Frequency f
T
(MH
Z
)
(V
CE
=12V)
Emitter Current I
E
(A)
Typ
0.1
1
3
0.5
1
10
100
1000
Time t(ms)
Transient Thermal Resistance
θ
j-a
(˚C/W)
1ms
10ms
10
50
5
3
100
200
0.2
1
0.5
10
50
100
5
Collector-Emitter Voltage V
CE
(V)
Collector Current I
C
(A)
DC
Without Heatsink
Natural Cooling
120
100
50
3.5
0
0
25
50
75
100
125
150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation P
C
(W)
With Infinite heatsink
Without Heatsink
0
25
20
10
0
2
2.2
1
Base-Emittor Voltage V
BE
(V)
Collector Current I
C
(A)
(V
CE
=4V)
125˚C (Case Temp)
25˚C (Case Temp)
–30˚C (Case Temp)
h
FE
–
I
C
Temperature
Characteristics
(Typical)
0.02
1
10
5
40
5000
20000
10000
1000
500
100
Collector Current I
C
(A)
DC Current Gain h
FE
(V
CE
=4V)
125˚C
–30˚C
25˚C
0.5
Silicon NPN Triple Diffused Planar Transistor
(Complement to type 2SB1383)
Application
:
Driver for Solenoid, Motor and General Purpose
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SD2083
120
120
6
25(
Pulse
40)
2
120(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
■
Absolute maximum ratings
■
Electrical Characteristics
2SD2083
10
max
10
max
120
min
2000
min
1.8
max
2.5
max
20
typ
340
typ
Unit
µ
A
mA
V
V
V
MHz
pF
Conditions
V
CB
=120V
V
EB
=6V
I
C
=25mA
V
CE
=4V, I
C
=12A
I
C
=12A, I
B
=24mA
I
C
=12A, I
B
=24mA
V
CE
=12V, I
E
=–1A
V
CB
=10V, f=1MHz
(Ta=25°C)
(Ta=25°C)
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
External Dimensions
MT-100(TO3P)
15.6
±0.4
9.6
19.9
±0.3
4.0
2.0
5.0
±0.2
1.8
ø3.2
±0.1
2
3
1.05
+0.2
-0.1
20.0min
4.0max
BE
5.45
±0.1
5.45
±0.1
C
4.8
±0.2
0.65
+0.2
-0.1
1.4
2.0
±0.1
a
b
■
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
24
R
L
(
Ω
)
2
I
C
(A)
12
V
BB2
(V)
–5
I
B2
(mA)
–24
t
on
(
µ
s)
1.0typ
t
stg
(
µ
s)
6.0typ
t
f
(
µ
s)
1.0typ
I
B1
(mA)
24
V
BB1
(V)
10
Weight : Approx 6.0g
a. Type No.
b. Lot No.
B
C
E
(2
k
Ω
)
(
100
Ω
)
Equivalent
circuit
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