1 Publication Order Number :
MCH3375/D
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© Semiconductor Components Industries, LLC, 2015
February 2015 - Rev. 2
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of this data sheet.
MCH3375
Features
• On-Resistance RDS(on)1=227mΩ (typ)
• 4V Drive
• High Speed Switching and Low Loss
• Pb-Free, Halogen Free and RoHS Compliance
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter Symbol Value
Unit
Drain to Source Voltage VDSS –30 V
Gate to Source Voltage VGSS ±20 V
Drain Current (DC) ID –1.6 A
Drain Current (Pulse)
PW≤10μs, duty cycle≤1% IDP –6.4 A
Power Dissipation
When mounted on ceramic substrate
(900mm2
×
0.8mm)
PD 0.8 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg −55 to +150 °C
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
Thermal Resistance Ratings
Parameter Symbol Value Unit
Junction to Ambient
RθJA 156.25
°C/W
When mounted on ceramic substrate
(900mm2
×
0.8mm)
Power MOSFET
–
30V, 295mΩ,
–
1.6A, Single P-Channel
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Electrical Connection
P-Channel
Packing Type : TL Marking
TL
QG
LOT No.
LOT No.
VDSS R
DS(on) Max ID Max
–30V
295mΩ@
–
10V –1.6A
523mΩ@
–
4.5V
609mΩ@
–
4V
1
2
3
1:Gate
2:Source
3:Drain
MCH3375
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2
Electrical Characteristics at Ta = 25°C
Parameter Symbol Conditions
Value
Unit
min typ max
Drain to Source Breakdown Voltage V(BR)DSS I
D=–1mA, VGS=0V –30 V
Zero-Gate Voltage Drain Current IDSS V
DS=–30V, VGS=0V –1 μA
Gate to Source Leakage Current IGSS V
GS=±16V, VDS=0V
±10 μA
Gate Threshold Voltage VGS(th) VDS=–10V, ID=–1mA –1.2 –2.6 V
Forward Transconductance gFS V
DS=–10V, ID=–0.8A 1.3 S
Static Drain to Source On-State Resistance
RDS(on)1 ID=–0.8A, VGS=–10V 227 295 mΩ
RDS(on)2 ID=–0.4A, VGS=–4.5V 374 523 mΩ
RDS(on)3 ID=–0.4A, VGS=–4V 435 609 mΩ
Input Capacitance Ciss
VDS=–10V, f=1MHz
82 pF
Output Capacitance Coss 22 pF
Reverse Transfer Capacitance Crss 16 pF
Turn-ON Delay Time td(on)
See specified Test Circuit
4.0 ns
Rise Time t
r
3.3 ns
Turn-OFF Delay Time td(off) 12 ns
Fall Time tf 5.4 ns
Total Gate Charge Qg
VDS=–15V, VGS=–10V, ID=–1.6A
2.2 nC
Gate to Source Charge Qgs 0.36 nC
Gate to Drain “Miller” Charge Qgd 0.49 nC
Forward Diode Voltage VSD I
S=–1.6A, VGS=0V –0.9 −1.5 V
Switching Time Test Circuit
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
PW=10μs
D.C.≤1%
P
.G 50Ω
G
S
D
ID=--0.8A
RL=18.75Ω
V
DD
=
-- 1 5
V
VOUT
MCH3375
VIN
0V
--10V
V
IN
MCH3375
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3
MCH3375
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4
MCH3375
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5
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States
and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of
SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf . SCILLC reserves the right to make changes without
further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose,
nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including
without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can
and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are
not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers,
employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was
negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject toall
applicable copyright laws and is not for resale in any manner.
0.65 0.65
0.4
2.1
0.6
Package Dimensions
MCH3375-TL-H / MCH3375-TL-W
MCPH3
CASE 419AQ
ISSUE O
Unit : mm
1 : Gate
2 : Source
3 : Drain
Recommended
Soldering Footprint
ORDERING INFORMATION
Device Package
Shipping Note
MCH3375-TL-H
MCPH3
SC-70,SOT-323 3,000 pcs. / reel Pb-Free
and Halogen Free
MCH3375-TL-W
Note on usage : Since the MCH3375 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
