2N3055AG - ON SEMICONDUCTOR

September, 2013 − Rev. 7 1Publication Order Number:

2N3055A/D

2N3055AG (NPN),

MJ15015G (NPN),

MJ15016G (PNP)

Complementary Silicon

High-Power Transistors

These PowerBase complementary transistors are designed for high

power audio, stepping motor and other linear applications. These

devices can also be used in power switching circuits such as relay or

solenoid drivers, dc−to−dc converters, inverters, or for inductive loads

requiring higher safe operating area than the 2N3055.

Features

•High Current−Gain − Bandwidth

•Safe Operating Area

•These Devices are Pb−Free and are RoHS Compliant*

MAXIMUM RATINGS (Note 1)

Rating Symbol Value Unit

Collector−Emitter Voltage

2N3055AG

MJ15015G, MJ15016G

VCEO 60

120

Vdc

Collector−Base Voltage

2N3055AG

MJ15015G, MJ15016G

VCBO 100

200

Vdc

Collector−Emitter Voltage Base

Reversed Biased

2N3055AG

MJ15015G, MJ15016G

VCEV

100

200

Vdc

Emitter−Base Voltage VEBO 7.0 Vdc

Collector Current − Continuous IC15 Adc

Base Current IB7.0 Adc

Total Device Dissipation

@ TC = 25_C

2N3055AG

MJ15015G, MJ15016G

Derate above 25_C

2N3055AG

MJ15015G, MJ15016G

115

180

0.65

1.03

W/_C

Operating and Storage Junction

Temperature Range TJ, Tstg −65 to +200 _C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Indicates JEDEC Registered Data. (2N3055A)

THERMAL CHARACTERISTICS

Characteristics Symbol Max Max Unit

Thermal Resistance, Junction−to−Case RqJC 1.52 0.98 _C/W

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

15 AMPERE

COMPLEMENTARY SILICON

POWER TRANSISTORS

60, 120 VOLTS − 115, 180 WATTS

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MARKING DIAGRAMS

2N3055AG

AYWW

MEX

TO−204 (TO−3)

CASE 1−07

STYLE 1

2N3055A = Device Code

MJ1501x = Device Code

x = 5 or 6

G = Pb−Free Package

A = Assembly Location

Y = Year

WW = Work Week

MEX = Country of Origin

MJ1501xG

AYWW

MEX

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

ORDERING INFORMATION

PNP

BASE

EMITTER 2

CASE 3

BASE

EMITTER 2

CASE 3

CASE

NPN

2N3055AG (NPN), MJ15015G (NPN), MJ15016G (PNP)

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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS (Note 2)

Collector−Emitter Sustaining Voltage (Note 3) 2N3055AG

(IC = 200 mAdc, IB = 0) MJ15015G, MJ15016G VCEO(sus) 60

120 −

−Vdc

Collector Cutoff Current

(VCE = 30 Vdc, VBE(off) = 0 Vdc) 2N3055AG

(VCE = 60 Vdc, VBE(off) = 0 Vdc) MJ15015G, MJ15016G

ICEO −

−0.7

0.1

mAdc

Collector Cutoff Current (Note 3) 2N3055AG

(VCEV = Rated Value, VBE(off) = 1.5 Vdc) MJ15015G, MJ15016G ICEV −

−5.0

1.0 mAdc

Collector Cutoff Current

(VCEV = Rated Value, VBE(off) = 1.5 Vdc, 2N3055AG

TC = 150_C) MJ15015G, MJ15016G

ICEV −

−30

6.0

mAdc

Emitter Cutoff Current 2N3055AG

(VEB = 7.0 Vdc, IC = 0) MJ15015G, MJ15016G IEBO −

−5.0

0.2 mAdc

SECOND BREAKDOWN (Note 3)

Second Breakdown Collector Current with Base Forward Biased

(t = 0.5 s non−repetitive) 2N3055AG

(VCE = 60 Vdc) MJ15015G, MJ15016G

IS/b 1.95

3.0 −

−

Adc

ON CHARACTERISTICS (Note 2 and 3)

DC Current Gain

(IC = 4.0 Adc, VCE = 2.0 Vdc)

(IC = 4.0 Adc, VCE = 4.0 Vdc)

(IC = 10 Adc, VCE = 4.0 Vdc)

hFE 10

5.0

−

Collector−Emitter Saturation Voltage

(IC = 4.0 Adc, IB = 400 mAdc)

(IC = 10 Adc, IB = 3.3 Adc)

(IC = 15 Adc, IB = 7.0 Adc)

VCE(sat) −

−

1.1

3.0

5.0

Vdc

Base−Emitter On Voltage

(IC = 4.0 Adc, VCE = 4.0 Vdc) VBE(on) 0.7 1.8 Vdc

DYNAMIC CHARACTERISTICS (Note 3)

Current−Gain − Bandwidth Product 2N3055AG, MJ15015G

(IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz) MJ15016G fT0.8

2.2 6.0

18 MHz

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cob 60 600 pF

SWITCHING CHARACTERISTICS (2N3055AG only) (Note 3)

RESISTIVE LOAD

Delay Time

(VCC = 30 Vdc, IC = 4.0 Adc,

IB1 = IB2 = 0.4 Adc,

tp = 25 ms Duty Cycle v 2%

td− 0.5 ms

Rise Time tr− 4.0 ms

Storage Time ts− 3.0 ms

Fall Time tf− 6.0 ms

2. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2%.

3. Indicates JEDEC Registered Data. (2N3055A)

2N3055AG (NPN), MJ15015G (NPN), MJ15016G (PNP)

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200

00 25 50 75 100 125 150 175 200

Figure 1. Power Derating

TC, CASE TEMPERATURE (°C)

MJ15015

MJ15016

P , AVERAGE POWER DISSIPATION (W)

D(AV)

150

100

50 2N3055A

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 2. DC Current Gain

200

0.2

IC, COLLECTOR CURRENT (AMP)

20.3 0.5 0.7 1 2 3 5 7 15

100

hFE, DC CURRENT GAIN

TJ = 150°C

25°C

-55°C

VCE = 4.0 V

Figure 3. Collector Saturation Region

2.8

0.005

IB, BASE CURRENT (AMP)

00.01 0.02 0.05 0.1 0.2 0.5 1 2 5

1.6

0.8

0.4

IC = 1 A

TJ = 25°C

4 A

2.4

1.2

8 A

f, CURRENT-GAIN — BANDWIDTH PRODUCT (MHz)

3.5

0.2

IC, COLLECTOR CURRENT (AMP)

0.3 0.5 0.7 1 2 3 5 7 20

2.5

1.5

0.5

TC = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

V, VOLTAGE (VOLTS)

Figure 4. “On” Voltages

VBE(on) @ VCE = 4 V

0.1

IC, COLLECTOR CURRENT (AMPS)

0.2 0.3 0.5 1.0 2.0

5.0

2.0

1.0

MJ15016

Figure 5. Current−Gain − Bandwidth Product

2N3055A

MJ15015

2N3055AG (NPN), MJ15015G (NPN), MJ15016G (PNP)

http://onsemi.com

Figure 6. Switching Times Test Circuit

(Circuit shown is for NPN)

+13 V

25 ms

-11 V

30 W

-5 V

1N6073

SCOPE

VCC

+30 V

7.5 W

tr, tf ≤ 10 ns

DUTY CYCLE = 1.0%

0.2

Figure 7. Turn−On Time

IC, COLLECTOR CURRENT (AMP)

t, TIME (s)μ

0.7

0.5

0.1 0.3 0.5 0.7 1 2 3 7 15

VCC = 30 V

IC/IB = 10

TJ = 25°C

0.3

0.2

510

0.2

Figure 8. Turn−Off Times

IC, COLLECTOR CURRENT (AMPS)

0.1

0.5

0.1 0.3 0.5 0.7 1 3 5 15

VCC = 30

IC/IB = 10

IB1 = IB2

TJ = 25°C

0.3

t, TIME (s)μ

0.7

0.2

710

400

1.0

Figure 9. Capacitances

VR, REVERSE VOLTAGE (VOLTS)

20 20 50 100 200 500 10002.0 5.0 10

C, CAPACITANCE (pF)

200

100

TJ = 25°C

Cib

Cob

2N3055A

MJ15015

MJ15016

2N3055AG (NPN), MJ15015G (NPN), MJ15016G (PNP)

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COLLECTOR CUT−OFF REGION

10,000

+0.2

Figure 10. 2N3055A, MJ15015

VBE, BASE-EMITTER VOLTAGE (VOLTS)

1000

100

1.0

, COLLECTOR CURRENT (A)

0.1

0.01 +0.1 0 -0.1 -0.2 -0.3 -0.4 -0.5

VCE = 30 V

TJ = 150°C

100°C

25°C

REVERSE FORWARD

IC = ICES

NPN

1000

-0.2

Figure 11. MJ15016

VBE, BASE-EMITTER VOLTAGE (VOLTS)

100

1.0

0.1

, COLLECTOR CURRENT (A)μIC

0.01

0.001 -0.1 0 +0.1 +0.2 +0.3

VCE = 30 V

TJ = 150°C

100°C

25°C

REVERSE FORWARD

IC = ICES

PNP

+0.4 +0.5

Figure 12. Forward Bias Safe Operating Area

2N3055A

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

110 20 10060

IC, COLLECTOR CURRENT (AMPS)

30 ms

1 ms

100 ms

Figure 13. Forward Bias Safe Operating Area

MJ15015, MJ15016

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

5.0

0.215 20 10060

2.0

IC, COLLECTOR CURRENT (AMP)

0.1ms

100ms

BONDING WIRE LIMIT

THERMAL LIMIT @ TC = 25°C

(SINGLE PULSE)

SECOND BREAKDOWN LIMIT

1.0

0.5

30 120

1.0ms

BONDING WIRE LIMIT

THERMAL LIMIT @ TC = 25°C

(SINGLE PULSE)

SECOND BREAKDOWN LIMIT

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe Operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figures 12 and 13 is based on TC = 25_C;

TJ(pk) is variable depending on power level. Second

breakdown pulse limits are valid for duty cycles to 10% but

must be derated for temperature according to Figure 1.

ORDERING INFORMATION

Device Package Shipping

2N3055AG TO−204

(Pb−Free) 100 Units / Tray

MJ15015G TO−204

(Pb−Free) 100 Units / Tray

MJ15016G TO−204

(Pb−Free) 100 Units / Tray

2N3055AG (NPN), MJ15015G (NPN), MJ15016G (PNP)

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PACKAGE DIMENSIONS

TO−204 (TO−3)

CASE 1−07

ISSUE Z

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. ALL RULES AND NOTES ASSOCIATED WITH

REFERENCED TO-204AA OUTLINE SHALL APPLY.

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A1.550 REF 39.37 REF

B--- 1.050 --- 26.67

C0.250 0.335 6.35 8.51

D0.038 0.043 0.97 1.09

E0.055 0.070 1.40 1.77

G0.430 BSC 10.92 BSC

H0.215 BSC 5.46 BSC

K0.440 0.480 11.18 12.19

L0.665 BSC 16.89 BSC

N--- 0.830 --- 21.08

Q0.151 0.165 3.84 4.19

U1.187 BSC 30.15 BSC

V0.131 0.188 3.33 4.77

−T− SEATING

PLANE

2 PL

0.13 (0.005) Y M

0.13 (0.005) T

−Q−

−Y−

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

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2N3055A/D

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