Copyright © Harris Corporation 1995
5-5
SEMICONDUCTOR
MUR810, MUR815, MUR820,
RURP810, RURP815, RURP820
8A, 100V - 200V Ultrafast Diodes
Package
JEDEC TO-220AC
Symbol
ANODE
CATHODE
CATHODE
(FLANGE)
K
A
Features
• Ultrafast with Soft Recovery. . . . . . . . . . . . . . . . . . . . . .<25ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . .+175oC
• Reverse Voltage Up To . . . . . . . . . . . . . . . . . . . . . . . . . . .200V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Description
MUR810, MUR815, MUR820, RURP810, RURP815 and
RURP820 are ultrafast diodes with soft recovery characteristics
(tRR < 25ns). They have low forward voltage drop and are silicon
nitride passivated ion-implanted epitaxial planar construction.
These devices are intended for use as freewheeling/clamping diodes
and rectifiers in a variety of switching power supplies and other power
switching applications. Their low stored charge and ultrafast soft
recovery minimize ringing and electrical noise in many power switch-
ing circuits reducing power loss in the switching transistors.
Formerly developmental type TA09223.
PACKAGING AVAILABILITY
PART NUMBER PACKAGE BRAND
MUR810 TO-220AC MUR810
MUR815 TO-220AC MUR815
MUR820 TO-220AC MUR820
RURP810 TO-220AC RURP810
RURP815 TO-220AC RURP815
RURP820 TO-220AC RURP820
NOTE: When ordering, use the entire part number.
June 1995
Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified
MUR810
RURP810 MUR815
RURP815 MUR820
RURP820 UNITS
Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM 100 150 200 V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM 100 150 200 V
DC Blocking Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VR100 150 200 V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . .IF(AV)
(TC = +157oC) 888A
Repetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM
(Square Wave, 20kHz) 16 16 16 A
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM
(Halfwave, 1 Phase, 60Hz) 100 100 100 A
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD50 50 50 W
Avalanche Energy (See Figures 10 and 11). . . . . . . . . . . . . . . . . . . . . EAVL 20 20 20 mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ-65 to +175 -65 to +175 -65 to +175 oC
File Number 1355.4
5-6
Specifications MUR810, MUR815, MUR820, RURP810, RURP815, RURP820
Electrical Specifications TC = +25oC, Unless Otherwise Specified
SYMBOL TEST CONDITION
MUR810, RURP810 MUR815, RURP815 MUR820, RURP820
UNITSMIN TYP MAX MIN TYP MAX MIN TYP MAX
VFIF = 8A, TC = +25oC - - 0.975 - - 0.975 - - 0.975 V
IF = 8A, TC = +150oC - - 0.895 - - 0.895 - - 0.895 V
IRVR = 100V, TC = +25oC --100------µA
V
R
= 150V, TC = +25oC -----100---µA
V
R
= 200V, TC = +25oC --------100µA
I
RV
R
= 100V, TC = +150oC--500------µA
V
R
= 150V, TC = +150oC-----500---µA
V
R
= 200V, TC = +150oC--------500µA
t
RR IF = 1A, dIF/dt = 200A/µs- -25- -25- -25ns
I
F
= 8A, dIF/dt = 200A/µs- -30- -30- -30ns
t
AI
F
= 8A, dIF/dt = 200A/µs - 13 - - 13 - - 13 - ns
tBIF = 8A, dIF/dt = 200A/µs-5--5--5-ns
Q
RR IF = 8A, dIF/dt = 200A/µs - 25 - - 25 - - 25 - nC
CJVR = 10V, IF = 0A - 60 - - 60 - - 60 - pF
RθJC --3--3--3
o
C/W
DEFINITIONS
VF = Instantaneous forward voltage (pw = 300µs, D = 2%).
IR = Instantaneous reverse current .
tRR = Reverse recovery time (See Figure 2), summation of tA + tB.
tA = Time to reach peak reverse current (See Figure 2).
tB = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 2).
QRR = Reverse recovery charge.
CJ = Junction Capacitance.
RθJC = Thermal resistance junction to case.
EAVL = Controlled Avalanche Energy (See Figures 10 and 11).
pw = pulse width.
D = duty cycle.
FIGURE 1. tRR TEST CIRCUIT FIGURE 2. tRR WAVEFORMS AND DEFINITIONS
C1
LLOOP
DUT
Q3
R3
Q4
Q2
R1
R2
-V4
Q1
-V2
0
0
+V1
t1
t2
t3
R4
+V3
V1 AMPLITUDE CONTROLS IF
V2 AMPLITUDE CONTROLS dI F/dt
L1 = SELF INDUCTANCE OF t1≥ 5tA(MAX)
t2 > tRR
t3 > 0
L1
R4
tA(MIN)
10
≤
R4+ LLOOP
dt
dIF
IFtRR
tAtB
0
IRM
0.25 IRM
VR
VRM
5-7
MUR810, MUR815, MUR820, RURP810, RURP815, RURP820
Typical Performance Curves
FIGURE 3. TYPICAL FORWARD CURRENT vs FORWARD
VOLTAGE DROP FIGURE 4. TYPICAL REVERSE CURRENT vs REVERSE
VOLTAGE
FIGURE 5. TYPICAL tRR, tA AND tB CURVES vs FORWARD
CURRENT AT +25oCFIGURE 6. TYPICAL tRR, tA AND tB CURVES vs FORWARD
CURRENT AT +100oC
FIGURE 7. TYPICAL tRR, tA AND tB CURVES vs FORWARD
CURRENT AT +175oCFIGURE 8. CURRENT DERATING CURVE FOR ALL TYPES
VF, FORWARD VOLTAGE (V)
IF, FORWARD CURRENT (A)
1
40
0.5
10
00.2 0.4 0.6 0.8 1
+175oC+25oC
+100oC
1.2 1.4
VR, REVERSE VOLTAGE (V)
0200
100 150
100
0.001
0.01
0.1
1
50
10
+175oC
+100oC
+25oC
IR, REVERSE CURRENT (µA)
tRR
IF, FORWARD CURRENT (A)
1
0
20
16
0.5 8
12
4
t, RECOVERY TIMES (ns)
tA
tB
TC = +25oC, dIF/dt = 200A/µs
8
4
5
10
15
tB
0.5
08
14
20 tA
tRR
35 TC = +100oC, dIF/dt = 200A/µs
IF, FORWARD CURRENT (A)
t, RECOVERY TIMES (ns)
25
30
10
20
30
tB
0.5
08
14
40
tA
tRR
50 TC = +175oC, dIF/dt = 200A/µs
IF, FORWARD CURRENT (A)
t, RECOVERY TIMES (ns)
2
0
140 145 155 175165
4
6
8
TC, CASE TEMPERATURE (oC)
IF(AV), AVERAGE FORWARD CURRENT (A)
150
DC
SQ. WAVE
160 170
5-8
MUR810, MUR815, MUR820, RURP810, RURP815, RURP820
FIGURE 9. TYPICAL JUNCTION CAPACITANCE vs REVERSE VOLTAGE
Test Circuit and Waveforms
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT FIGURE 11. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
Typical Performance Curves
(Continued)
VR, REVERSE VOLTAGE (V)
75
0
125
050 100 150 200
100
50
CJ, JUNCTION CAPACITANCE (pF)
150
25
12V
Q2
Q1
12V
130Ω
DUT
CURRENT
SENSE
+
LR
1MΩ
VDD
130Ω
IMAX = 1A
L = 40mH
R < 0.1Ω
EAVL = 1/2LI2 [VAVL/(VAVL - VDD)]
Q1 AND Q2 ARE 1000V MOSFETs
-
VDD
IV
t
0t
1t
2
I
L
V
AVL
t
IL