M13S128324A-3.6BIG2M - Elite Semiconductor Memory Technology, Inc.

ESMT

M13S128324A (2M)

Operation Temperature Condition -40°C~85°C

Elite Semiconductor Memory Technology Inc. Publication Date : Dec. 2010

Revision : 1.0 1/48

DDR SDRAM 1M x 32 Bit x 4 Banks

Double Data Rate SDRAM

Features

z Double-data-rate architecture, two data transfers per clock cycle

z Bi-directional data strobe (DQS)

z Differential clock inputs (CLK and CLK )

z DLL aligns DQ and DQS transition with CLK transition

z Quad bank operation

z CAS Latency : 2, 2.5, 3

z Burst Type : Sequential and Interleave

z Burst Length : 2, 4, 8

z All inputs except data & DM are sampled at the rising edge of the system clock(CLK)

z Data I/O transitions on both edges of data strobe (DQS)

z DQS is edge-aligned with data for READs; center-aligned with data for WRITEs

z Data mask (DM) for write masking only

z VDD = 2.375V ~ 2.625V, VDDQ = 2.375V ~ 2.625V

z VDD = 2.5V ~ 2.7V, VDDQ = 2.5V ~ 2.7V (for speed -3.6)

z Auto & Self refresh

z 32ms refresh period (4K cycle)

z 2.5V I/O (SSTL_2 compatible)

Ordering Information

Product ID Max Freq. VDD Package Comments

M13S128324A -3.6BIG2M 275MHz (DDR550) 2.6V

M13S128324A -4BIG2M 250MHz (DDR500) 2.5V

M13S128324A -5BIG2M 200MHz (DDR400) 2.5V

M13S128324A -6BIG2M 166MHz (DDR333) 2.5V

144 ball FBGA Pb-free

ESMT

M13S128324A (2M)

Operation Temperature Condition -40°C~85°C

Elite Semiconductor Memory Technology Inc. Publication Date : Dec. 2010

Revision : 1.0 2/48

Functional Block Diagram

CLK, CLK

Bank A

Command Decoder

Control Logic

Latch Circuit

Bank B

Mode Register &

Extended Mode

Column

Address

Buffer

Refresh

Counter

Row

Address

Buffer

Refresh

Counter

Row Decoder

Sense Amplifier

Column Decoder

Data Control Circuit

Input & Output

Buffer

Address, BA

Clock

Generator

CLK

CKE

RAS

CAS

DLL

DQS

Bank C

Bank D

ESMT

M13S128324A (2M)

Operation Temperature Condition -40°C~85°C

Elite Semiconductor Memory Technology Inc. Publication Date : Dec. 2010

Revision : 1.0 3/48

BALL CONFIGURATION (TOP VIEW)

(BGA144, 12mmX12mmX1.4mm Body, 0.8mm Ball Pitch)

DQS0

VSS

Thermal

DQ4

DQ6

DQ7

DQ17

DQ19

DQS2

DQ21

DQ22

CAS

RAS

DM0

VDDQ

DQ5

VDDQ

DQ16

DQ18

DM2

DQ20

DQ23

VSSQ

VDD

VDDQ

VDD

BA0

DQ3

VDDQ

VSSQ

VSS

VSSQ

VSS

BA1

23456789

VSSQ

DQ2

DQ1

VSSQ

VSS

A10

DQ0

VDDQ

VDD

VSS

VDD

A11

DQ31

VDDQ

VDD

VSS

DQ29

DQ30

VSSQ

VSS

Thermal

VSS

Thermal

VSS

Thermal

VSS

Thermal

VSS

Thermal

VSS

Thermal

VSS

Thermal

VSS

Thermal

VSS

Thermal

VSS

Thermal

VSS

Thermal

VSS

VDD

VSS

Thermal

VSS

Thermal

VSS

Thermal

VSS

Thermal

DQ28

VDDQ

VSSQ

VSS

VSSQ

VDD

A8/AP

CLK

DM3

VDDQ

DQ26

VDDQ

CKE

CLK

DQS3

DQ27

DQ25

DQ24

VREF

DQ8

VDDQ

DQ15

DQ13

DM1

DQ11

DQ9

DQ14

DQ12

DQS1

DQ10

VSSQ

11 12

VDDQ

Pin Description

Pin Name Function Pin Name Function

A0~A11,

BA0,BA1

Address inputs

- Row address A0~A11

- Column address A0~A7

A8/AP : AUTO Precharge

BA0, BA1 : Bank selects (4 Banks)

DM0~DM3

DM is an input mask signal for write data.

DM0 corresponds to the data on DQ0~DQ7;

DM1 corresponds to the data on DQ8~DQ15;

DM2 corresponds to the data on DQ16~DQ23;

DM3 corresponds to the data on DQ24~DQ31.

DQ0~DQ31 Data-in/Data-out CLK, CLK Clock input

RAS Row address strobe CKE Clock enable

CAS Column address strobe CS Chip select

WE Write enable VDDQ Supply Voltage for DQ

VSS Ground VSSQ Ground for DQ

VDD Power VREF Reference Voltage for SSTL_2

DQS0~DQS3

(for FBGA)

Bi- directional Data Strobe.

DQS0 correspond to the data on DQ0~DQ7;

DQS1 correspond to the data on DQ8~DQ15;

DQS2 correspond to the data on DQ16~DQ23;

DQS3 correspond to the data on DQ24~DQ31.

NC No connection

ESMT

M13S128324A (2M)

Operation Temperature Condition -40°C~85°C

Elite Semiconductor Memory Technology Inc. Publication Date : Dec. 2010

Revision : 1.0 4/48

Absolute Maximum Rating

Parameter Symbol Value Unit

Voltage on VDD & VDDQ supply relative to VSS V

DD, VDDQ -1.0 ~ 3.6 V

Voltage on inputs relative to VSS V

INPUT -1.0 ~ 3.6 V

Voltage on I/O pins relative to VSS V

IO -0.5 ~ VDDQ+0.5 V

Operating ambient temperature TA -40 ~ +85 C°

Storage temperature TSTG -55 ~ +150 C°

Power dissipation PD 2 W

Short circuit current IOS 50 mA

Note: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.

Functional operation should be restricted to recommend operation condition.

Exposure to higher than recommended voltage for extended periods of time could affect device reliability.

DC Operation Condition & Specifications

DC Operation Condition

Recommended operating conditions (Voltage reference to VSS = 0V, TA = -40 to 85 C°)

Min Max

Parameter Symbol

-3.6 -4/5/6 -3.6 -4/5/6

Unit Note

Supply voltage VDD 2.5 2.375 2.7 2.625 V

I/O Supply voltage VDDQ 2.5 2.375 2.7 2.625 V

I/O Reference voltage VREF 0.49*VDDQ 0.51*VDDQ V 1

I/O Termination voltage (system) VTT V

REF - 0.04 VREF + 0.04 V 2

Input logic high voltage VIH (DC) VREF + 0.15 VDDQ + 0.3 V

Input logic low voltage VIL (DC) -0.3 VREF - 0.15 V

Input Voltage Level, CLK and CLK inputs VIN (DC) -0.3 VDDQ + 0.3 V

Input Differential Voltage, CLK and CLK inputs VID (DC) 0.36 VDDQ + 0.6 V 3

V–I Matching: Pullup to Pulldown Current Ratio VI (Ratio) 0.71 1.4 - 4

Input leakage current: Any input 0V ≤ VIN ≤ VDD

(All other pins not tested under = 0V) IL -2 2

Output leakage current

(DQs are disable; 0V ≤ VOUT ≤ VDDQ) IOZ -5 5

ESMT

M13S128324A (2M)

Operation Temperature Condition -40°C~85°C

Elite Semiconductor Memory Technology Inc. Publication Date : Dec. 2010

Revision : 1.0 5/48

DC Operation Conditions - continued

Parameter Symbol Min Max Unit Note

Output High Current (Full strength driver)

(VOUT =VDDQ-0.373V, min VREF, min VTT) IOH -16.8 mA 5, 7

Output Low Current (Full strength driver)

(VOUT = 0.373V, max VREF, max VTT) IOL +16.8 mA 5, 7

Output High Current (Reduced strength driver – 60%)

(VOUT = VDDQ-0.763V, min VREF, min VTT) IOH -9 mA 6

Output Low Current (Reduced strength driver – 60%)

(VOUT = 0.763V, max VREF, max VTT) IOL +9 mA 6

Output High Current (Reduced strength driver – 30%)

(VOUT = VDDQ-1.056V, min VREF, min VTT) IOH -4.5 mA 6

Output Low Current (Reduced strength driver – 30%)

(VOUT = 1.056V, max VREF, max VTT) IOL +4.5 mA 6

Notes:

1. VREF is expected to be equal to 0.5* VDDQ of the transmitting device, and to track variations in the DC level of the same.

Peak-to-peak noise on VREF may not exceed 2% of the DC value.

2. VTT is not applied directly to the device. VTT is system supply for signal termination resistors, is expected to be set equal to

VREF, and must track variations in the DC level of VREF.

3. VID is the magnitude of the difference between the input level on CLK and the input level on CLK .

4. The ratio of the pullup current to the pulldown current is specified for the same temperature and voltage, over the entire

temperature and voltage range, for device drain to source voltages from 0.25 V to 1.0 V. For a given output, it represents the

maximum difference between pullup and pulldown drivers due to process variation. The full variation in the ratio of the

maximum to minimum pullup and pulldown current will not exceed 1.7 for device drain to source voltages from 0.1 to 1.0.

5. VOH = 2.15V, VOL =0.35V for speed -3.5; VOH = 2.025V, VOL =0.35V for others.

6. VOH = 2.1V, VOL =0.4V for speed -3.5; VOH = 1.975V, VOL =0.4V for others.

7. The values of IOH(DC) is based on VDDQ = 2.5V and VTT = 1.29V for speed -3.5; VDDQ = 2.375V and VTT = 1.2275V for

others.

The values of IOL(DC) is based on VDDQ = 2.5V and VTT = 1.21V for speed -3.5; VDDQ = 2.375V and VTT = 1.1475V for

others.

ESMT

M13S128324A (2M)

Operation Temperature Condition -40°C~85°C

Elite Semiconductor Memory Technology Inc. Publication Date : Dec. 2010

Revision : 1.0 6/48

IDD Parameters and Test Conditions

Test Condition Symbol Note

Operating Current (one bank Active - Precharge):

tRC = tRC (min); tCK = tCK (min); DQ, DM, and DQS inputs changing once per clock cycle;

Address and control inputs changing once every two clock cycles; CS = high between valid commands.

IDD0

Operating Current (one bank Active - Read - Precharge):

One bank open; BL = 4; tRC = tRC (min); tCK = tCK (min); IOUT = 0mA;

Address and control inputs changing once per deselect cycle; CS = high between valid commands

IDD1 2

Precharge Power-down Standby Current:

All banks idle; Power-down mode; tCK = tCK (min); CKE

≤

VIL(max); VIN = VREF for DQ, DQS and DM. IDD2P

Precharge Floating Standby Current:

CS ≥VIH(min); All banks idle; CKE ≥VIH(min); tCK = tCK (min);

Address and other control inputs changing once per clock cycle; VIN = VREF for DQ, DQS, and DM.

IDD2F

Precharge Quiet Standby Current:

CS ≥VIH(min); All banks idle; CKE ≥VIH(min); tCK = tCK (min);

Address and other control inputs stable at ≥VIH(min) or

≤

VIL(max); VIN = VREF for DQ, DQS, and DM.

IDD2Q

Active Power-down Standby Current:

One bank active; Power-down mode; CKE ≤VIL(max); tCK = tCK (min); VIN = VREF for DQ, DQS, and DM. IDD3P

Active Standby Current:

CS ≥VIH(min); CKE ≥VIH(min); One bank active; tRC = tRAS (max); tCK = tCK (min);

DQ, DM, and DQS inputs changing twice per clock cycle;

Address and other control inputs changing once per clock cycle.

IDD3N

Operating Current (burst read):

BL = 2; Continuous burst reads; One bank active;

Address and control inputs changing once per clock cycle; tCK = tCK (min); IOUT = 0mA;

50% of data changing on every transfer.

IDD4R

Operating Current (burst write):

BL = 2; Continuous burst writes; One bank active;

Address and control inputs changing once per clock cycle; tCK = tCK (min);

DQ, DM, and DQS inputs changing twice per clock cycle; 50% of input data changing at every transfer.

IDD4W

Auto Refresh Current:

tRC = tRFC(min) IDD5

Self Refresh Current:

CKE ≤0.2V; external clock on; tCK = tCK (min) IDD6 1

Operating Current (Four bank operation):

Four-bank interleaving READs (burst = 4) with auto precharge; tRC = tRC (min); tCK = tCK (min);

Address and control inputs change only during ACTIVE, READ, or WRITE commands; IOUT = 0mA.

IDD7 2

Notes:

1. Enable on-chip refresh and address counters.

2. Random address is changing; 50% of data is changing at every transfer.

ESMT

M13S128324A (2M)

Operation Temperature Condition -40°C~85°C

Elite Semiconductor Memory Technology Inc. Publication Date : Dec. 2010

Revision : 1.0 7/48

IDD Specifications

Version

Symbol

-3.6 -4 -5 -6

Unit

IDD0 235 210 175 145 mA

IDD1 245 220 190 180 mA

IDD2P 40 40 40 40 mA

IDD2F 135 120 115 95 mA

IDD2Q 135 120 115 95 mA

IDD3P 60 55 50 45 mA

IDD3N 150 130 120 110 mA

IDD4R 440 400 350 300 mA

IDD4W 470 430 380 330 mA

IDD5 320 290 270 250 mA

IDD6 5 5 5 5 mA

IDD7 500 460 410 360 mA

Input / Output Capacitance

(VDD = 2.375V~2.625V, VDDQ =2.375V~2. 625V, TA = 25 C° , f = 1MHz)

(VDD = 2.5V~2.7V, VDDQ =2.5V~2.7V, TA = 25 C° , f = 1MHz (for speed -3.6))

Parameter Symbol Min Max Unit

Input capacitance (A0~A11, BA0~BA1, CKE,

CS , RAS , CAS , WE ) CIN1 1 4 pF

Input capacitance (CLK, CLK ) CIN2 1 5 pF

Data & DQS input/output capacitance COUT 1 6.5 pF

Input capacitance (DM) CIN3 1 6.5 pF

ESMT

M13S128324A (2M)

Operation Temperature Condition -40°C~85°C

Elite Semiconductor Memory Technology Inc. Publication Date : Dec. 2010

Revision : 1.0 8/48

AC Operation Conditions & Timing Specifications

AC Operation Conditions

Parameter Symbol Min Max Unit Note

Input High (Logic 1) Voltage, DQ, DQS and DM signals VIH(AC) VREF + 0.31 V

Input Low (Logic 0) Voltage, DQ, DQS and DM signals VIL(AC) VREF - 0.31 V

Input Differential Voltage, CLK and CLK inputs VID(AC) 0.7 VDDQ+0.6 V 1

Input Crossing Point Voltage, CLK and CLK inputs VIX(AC) 0.5*VDDQ-0.2 0.5*VDDQ+0.2 V 2

Notes:

1. VID is the magnitude of the difference between the input level on CLK and the input on CLK .

2. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the DC level of the

same.

AC Overshoot / Undershoot Specification

Value

Parameter Pin

-3.6/ -4/ -5/ -6

Unit

Address, Control 1.5 V

Maximum peak amplitude allowed for overshoot Data, Strobe, Mask 1.2 V

Address, Control 1.5 V

Maximum peak amplitude allowed for undershoot Data, Strobe, Mask 1.2 V

Address, Control 4.5 V-ns

Maximum overshoot area above VDD

Data, Strobe, Mask 2.4 V-ns

Address, Control 4.5 V-ns

Maximum undershoot area below VSS

Data, Strobe, Mask 2.4 V-ns

ESMT

M13S128324A (2M)

Operation Temperature Condition -40°C~85°C

Elite Semiconductor Memory Technology Inc. Publication Date : Dec. 2010

Revision : 1.0 9/48

AC Timing Parameter & Specifications (Note: 1~6, 9~10)

-3.6 -4 -5 -6

Parameter Symbol

Min Max Min Max Min Max Min Max

Unit Note

CL2 7.5 12 7.5 12 7.5 12 7.5 12

CL2.5 6.0 12 6.0 12 6.0 12 6.0 12

Clock Period

CL3

tCK

3.6 12 4.0 12 5.0 12 6.0 12

DQ output access time from

CLK/ CLK tAC -0.6 +0.6 -0.7 +0.7 -0.7 +0.7 -0.7 +0.7 ns

CLK high-level width tCH 0.45 0.55 0.45 0.55 0.45 0.55 0.45 0.55 tCK

CLK low-level width tCL 0.45 0.55 0.45 0.55 0.45 0.55 0.45 0.55 tCK

DQS output access time from

CLK/ CLK tDQSCK -0.6 +0.6 -0.7 +0.7 -0.7 +0.7 -0.7 +0.7 ns

Clock to first rising edge of DQS delay tDQSS 0.8 1.2 0.8 1.2 0.8 1.2 0.8 1.2 tCK

DQ and DM input setup time (to DQS) tDS 0.4 0.45 0.45 0.45 ns

DQ and DM input hold time (to DQS) tDH 0.4 0.45 0.45 0.45 ns

DQ and DM input pulse width (for

each input) tDIPW 1.75 1.75 1.75 1.75 ns 18

Address and Control Input setup time

(fast slew rate) tIS 0.9 0.9 1.0 1.0 ns 15,17~19

Address and Control Input hold time

(fast slew rate) tIH 0.9 0.9 1.0 1.0 ns 15,17~19

Address and Control Input setup time

(slow slew rate) tIS 1.0 1.0 1.1 1.1 ns 16~19

Address and Control Input hold time

(slow slew rate) tIH 1.0 1.0 1.1 1.1 ns 16~19

Control and Address input pulse width

(for each input) tIPW 2.2 2.2 2.2 2.2 ns 18

DQS input high pulse width tDQSH 0.4 0.6 0.4 0.6 0.4 0.6 0.4 0.6 tCK

DQS input low pulse width tDQSL 0.4 0.6 0.4 0.6 0.4 0.6 0.4 0.6 tCK

DQS falling edge to CLK setup time tDSS 0.2 0.2 0.2 0.2 tCK

DQS falling edge hold time from CLK tDSH 0.2 0.2 0.2 0.2 tCK

Data strobe edge to output data edge tDQSQ 0.4 0.4 0.4 0.45 ns 22

Data-out high-impedance time from

CLK/ CLK tHZ -0.7 +0.7 -0.7 +0.7 -0.7 +0.7 -0.7 +0.7 ns 11

Data-out low-impedance time from

CLK/ CLK tLZ -0.7 +0.7 -0.7 +0.7 -0.7 +0.7 -0.7 +0.7 ns 11

Clock half period tHP

tCLmin

tCHmin

tCLmin

tCHmin

tCLmin

tCHmin

tCLmin

tCHmin

ns 20,21

DQ-DQS output hold time from DQS tQH tHP-

tQHS tHP-

tQHS ns 21

Data hold skew factor tQHS 0.4 0.45 0.45 0.5 ns

ESMT

M13S128324A (2M)

Operation Temperature Condition -40°C~85°C

Elite Semiconductor Memory Technology Inc. Publication Date : Dec. 2010

Revision : 1.0 10/48

AC Timing Parameter & Specifications - continued

-3.6 -4 -5 -6

Parameter Symbol

Min Max Min Max Min Max Min Max

Unit Note

Active to Precharge command tRAS 39.6 70K 40 70K 40 70K 42 70K ns

Active to Active /Auto Refresh

command period tRC 54 52 55 60 ns

Auto Refresh to Active /Auto Refresh

command period tRFC 64.8 68 70 72 ns

Active to Read delay tRCDRD 14.4 15 15 18 ns

Active to Write delay tRCDWR 10 10 10 18 ns

Precharge command period tRP 14.4 15 15 18 ns

Active to Read with Auto Precharge

command tRAP tRCDRD or

tRAS min tRCDRD or

tRAS min ns

Active bank A to Active bank B

command tRRD 10 10 10 12 ns

Write recovery time tWR 15 15 15 15 ns

Write data in to Read command delay tWTR 2 2 2 2 tCK

Col. Address to Col. Address delay tCCD 1 1 1 1 tCK

Average periodic refresh interval tREFI 7.8 7.8 7.8 7.8 us 14

Write preamble tWPRE 0.25 0.25 0.25 0.25 tCK

Write postamble tWPST 0.4 0.6 0.4 0.6 0.4 0.6 0.4 0.6 tCK 12

Read preamble tRPRE 0.9 1.1 0.9 1.1 0.9 1.1 0.9 1.1 tCK

Read postamble tRPST 0.4 0.6 0.4 0.6 0.4 0.6 0.4 0.6 tCK

Clock to DQS write preamble setup

time tWPRES 0 0 0 0 ns 13

Mode Register Set command cycle

time tMRD 2 2 2 2 tCK

Exit self refresh to Read command tXSRD 200 200 200 200 tCK

Exit self refresh to non-Read

command tXSNR 75 75 75 75 ns

Auto Precharge write recovery +

precharge time tDAL (tWR/tCK)

+(tRP/tCK) (tWR/tCK)

+(tRP/tCK) t

CK 23

Notes:

1. All voltages referenced to VSS.

2. Tests for AC timing, IDD, and electrical, AC and DC characteristics, may be conducted at nominal reference/supply

voltage levels, but the related specifications and device operation are guaranteed for the full voltage range specified.

3. The below figure represents the timing reference load used in defining the relevant timing parameters of the part. It is not

intended to be either a precise representation of the typical system environment nor a depiction of the actual load

presented by a production tester. System designers will use IBIS or other simulation tools to correlate the timing reference

load to a system environment. Manufacturers will correlate to their production test conditions (generally a coaxial

transmission line terminated at the tester electronics).

ESMT

M13S128324A (2M)

Operation Temperature Condition -40°C~85°C

Elite Semiconductor Memory Technology Inc. Publication Date : Dec. 2010

Revision : 1.0 11/48

4. AC timing and IDD tests may use a VIL to VIH swing of up to 1.5 V in the test environment, but input timing is still referenced

to VREF (or to the crossing point for CLK/ CLK ), and parameter specifications are guaranteed for the specified AC input

levels under normal use conditions. The minimum slew rate for the input signals is 1 V/ns in the range between VIL(AC) and

VIH(AC).

5. The AC and DC input level specifications are as defined in the SSTL_2 Standard (i.e., the receiver will effectively switch

as a result of the signal crossing the AC input level and will remain in that state as long as the signal does not ring back

above (below) the DC input LOW (HIGH) level.

6. Inputs are not recognized as valid until VREF stabilizes. Exception: during the period before VREF stabilizes, CKE ≤ 0.2VDDQ

is recognized as LOW.

7. Enables on-chip refresh and address counters.

8. IDD specifications are tested after the device is properly initialized.

9. The CLK/ CLK input reference level (for timing referenced to CLK/ CLK ) is the point at which CLK and CLK cross; the

input reference level for signals other than CLK/ CLK , is VREF.

10. The output timing reference voltage level is VTT.

11. tHZ and tLZ transitions occur in the same access time windows as valid data transitions. These parameters are not

referenced to a specific voltage level but specify when the device output is no longer driving (tHZ), or begins driving (tLZ).

12. The maximum limit for this parameter is not a device limit. The device will operate with a greater value for this parameter,

but system performance (bus turnaround) will degrade accordingly.

13. The specific requirement is that DQS be valid (HIGH, LOW, or at some point on a valid transition) on or before this CLK

edge. A valid transition is defined as monotonic and meeting the input slew rate specifications of the device. When no

writes were previously in progress on the bus, DQS will be transitioning from High- Z to logic LOW. If a previous write was

in progress, DQS could be HIGH, LOW, or transitioning from HIGH to LOW at this time, depending on tDQSS.

14. A maximum of eight AUTO REFRESH commands can be posted to any given DDR SDRAM device.

15. For command/address input slew rate ≥ 1.0 V/ns

16. For command/address input slew rate ≥ 0.5 V/ns and < 1.0 V/ns

17. For CLK & CLK slew rate ≥ 1.0 V/ns

18. These parameters guarantee device timing, but they are not necessarily tested on each device. They may be guaranteed

by device design or tester correlation.

19. Slew Rate is measured between VOH(AC) and VOL(AC).

20. Min (tCL, tCH) refers to the smaller of the actual clock low time and the actual clock high time as provided to the device (i.e.

this value can be greater than the minimum specification limits for tCL and tCH).....For example, tCL and tCH are = 50% of the

period, less the half period jitter (tJIT(HP)) of the clock source, and less the half period jitter due to crosstalk (tJIT(crosstalk))

into the clock traces.

21. tQH = tHP - tQHS, where:

tHP = minimum half clock period for any given cycle and is defined by clock high or clock low (tCH, tCL). tQHS accounts for 1)

The pulse duration distortion of on-chip clock circuits; and 2) The worst case push-out of DQS on one transition followed

by the worst case pull-in of DQ on the next transition, both of which are, separately, due to data pin skew and output

pattern effects, and p-channel to n-channel variation of the output drivers.

22. tDQSQ Consists of data pin skew and output pattern effects, and p-channel to n-channel variation of the output drivers for

any given cycle.

23. For each of the terms above, if not already an integer, round to the next highest integer.

ESMT

M13S128324A (2M)

Operation Temperature Condition -40°C~85°C

Elite Semiconductor Memory Technology Inc. Publication Date : Dec. 2010

Revision : 1.0 12/48

Command Truth Table

COMMAND CKEn-1 CKEn CS RAS CAS WE DM BA0~1 A8/AP A11~A9,

A7~A0 Note

Auto Refresh H 3

Entry

L L L H X X

L H H H 3

Refresh Self Refresh Exit L H

H X X X

XX 3

Bank Active & Row Addr. H X L L H H X V Row Address

Auto Precharge Disable L 4

Read &

Column

Address Auto Precharge Enable H X L H L H X V H

Column

Address

(A0~A7) 4

Auto Precharge Disable L 4,8

Write &

Column

Address Auto Precharge Enable H X L H L L V V H

Column

Address

(A0~A7) 4,6,8

Burst Terminate H X L H H L X X 7

Bank Selection V L

Precharge All Banks H X L L H L X X H X 5

H X X X

Entry H L

L H H H

Active Power Down Mode

Exit L H X X X X X

H X X X

Entry H L

L H H H

H X X X

Precharge Power Down

Mode

Exit L H

L H H H

Deselect (NOP) H X X X

No Operation (NOP) H X

L H H H

(V = Valid, X = Don’t Care, H = Logic High, L = Logic Low)

Notes:

1. OP Code: Operand Code. A0~A11 & BA0~BA1: Program keys. (@EMRS/MRS)

2. EMRS/MRS can be issued only at all banks precharge state.

A new command can be issued 2 clock cycles after EMRS or MRS.

3. Auto refresh functions are same as the CBR refresh of DRAM.

The automatical precharge without row precharge command is meant by “Auto”.

Auto/self refresh can be issued only at all banks precharge state.

4. BA0~BA1: Bank select addresses.

If both BA0 and BA1 are “Low” at read, write, row active and precharge, bank A is selected.

If BA0 is “High” and BA1 is “Low” at read, write, row active and precharge, bank B is selected.

If BA0 is “Low” and BA1 is “High” at read, write, row active and precharge, bank C is selected.

If both BA0 and BA1 are “High” at read, write, row active and precharge, bank D is selected.

5. If A8/AP is “High” at row precharge, BA is ignored and all banks are selected.

6. During burst write with auto precharge, new read/write command can not be issued.

Another bank read/write command can be issued after the end of burst.

New row active of the associated bank can be issued at tRP after end of burst.

7. Burst Terminate command is valid at every burst length.

8. DM and Data-in are sampled at the rising and falling edges of the DQS. Data-in byte are masked if the corresponding and

coincident DM is “High”. (Write DM latency is 0).

ESMT

M13S128324A (2M)

Operation Temperature Condition -40°C~85°C

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Basic Functionality

Power-Up and Initialization Sequence

DDR SDRAM must be powered up and initialized in a predefined manner. Operational procedures other than those specified may

result in undefined operation. No power sequencing is specified during power up and power down given the following criteria:

 VDD and VDDQ are driven from a single power converter output, AND

 VTT is limited to 1.35 V, AND

 VREF tracks VDDQ /2

OR, the following relationships must be followed:

 VDDQ is driven after or with VDD such that VDDQ < VDD + 0.3 V, AND

 VTT is driven after or with VDDQ such that VTT < VDDQ + 0.3 V, AND

 VREF is driven after or with VDDQ such that VREF < VDDQ + 0.3 V.

At least one of these two conditions must be met.

Except for CKE, inputs are not recognized as valid until after VREF is applied. CKE is an SSTL_2 input, but will detect an LVCMOS

LOW level after VDD is applied. Maintaining an LVCMOS LOW level on CKE during power-up is required to guarantee that the DQ

and DQS outputs will be in the High-Z state, where they will remain until driven in normal operation (by a read access).

After all power supply and reference voltages are stable, and the clock is stable, the DDR SDRAM requires a 200 μs delay prior to

applying an executable command. Once the 200 μs delay has been satisfied, a DESELECT or NOP command should be applied,

and CKE should be brought HIGH.

Following the NOP command, a PRECHARGE ALL command should be applied. Next a MODE REGISTER SET command should

be issued for the Extended Mode Register, to enable the DLL, and then a MODE REGISTER SET command should be issued for

the Mode Register, to reset the DLL, and to program the operating parameters. 200 clock cycles are required between the DLL reset

and any executable command. A PRECHARGE ALL command should be applied, placing the device in the ”all banks idle” state.

Once in the idle state, two AUTO refresh cycles must be performed. Additionally, a MODE REGISTER SET command for the Mode

Register, with the reset DLL bit deactivated (i.e., to program operating parameters without resetting the DLL) must be performed.

Following these cycles, the DDR SDRAM is ready for normal operation.

ESMT

M13S128324A (2M)

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Mode Register Definition

Mode Register Set (MRS)

The mode register stores the data for controlling the various operating modes of DDR SDRAM. It programs CAS latency,

addressing mode, burst length, test mode, DLL reset and various vendor specific options to make DDR SDRAM useful for variety of

different applications. The default value of the register is not defined, therefore the mode register must be written after EMRS setting

for proper DDR SDRAM operation. The mode register is written by asserting low on CS , RAS , CAS , WE and BA0~BA1 (The

DDR SDRAM should be in all bank precharge with CKE already high prior to writing into the mode register). The state of address

pins A0~A11 in the same cycle as CS , RAS , CAS , WE and BA0~BA1 going low is written in the mode register. Two clock

cycles are requested to complete the write operation in the mode register. The mode register contents can be changed using the

same command and clock cycle requirements during operation as long as all banks are in the idle state. The mode register is

divided into various fields depending on functionality. The burst length uses A0~A2, addressing mode uses A3, CAS latency (read

latency from column address) uses A4~A6. A7 is used for test mode. A8 is used for DLL reset. A7 must be set to low for normal MRS

operation. Refer to the table for specific codes for various burst length, addressing modes and CAS latencies.

BA1 BA0 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 Address Bus

0 0 RFU DLL TM CAS Latency BT Burst Length Mode Register

A8 DLL Reset A7 Mode A3 Burst Type

0 No 0 Normal 0 Sequential

1 Yes 1 Test 1 Interleave

Burst Length

CAS Latency Length

A6 A5 A4 Latency

A2 A1 A0

Sequential Interleave

BA1 BA0 Operating Mode 0 0 0 Reserve 0 0 0 Reserve Reserve

0 0 MRS Cycle 0 0 1 Reserve 0 0 1 2 2

0 1 EMRS Cycle 0 1 0 2 0 1 0 4 4

0 1 1 3 0 1 1 8 8

1 0 0 Reserve 1 0 0 Reserve Reserve

1 0 1 Reserve 1 0 1 Reserve Reserve

1 1 0 2.5 1 1 0 Reserve Reserve

1 1 1 Reserve 1 1 1 Reserve Reserve

Note: RFU (Reserved for future use) must stay “0” during MRS cycle.

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M13S128324A (2M)

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Extended Mode Register Set (EMRS)

The extended mode register stores the data enabling or disabling DLL and selecting output drive strength. The default value of the

extended mode register is not defined, therefore the extended mode register must be written after power up for enabling or disabling

DLL. The extended mode register is written by asserting low on CS , RAS , CAS , WE , BA1 and high on BA0 (The DDR SDRAM

should be in all bank precharge with CKE already high prior to writing into the extended mode register). The state of address pins

A0~A11 and BA0~BA1 in the same cycle as CS , RAS , CAS and WE going low is written in the extended mode register. Two

clock cycles are requested to complete the write operation the mode register. The mode register contents can be changed using the

same command and clock cycle requirements during operation as long as all banks are in the idle state. A0 is used for DLL enable

or disable. A1 and A6 are used for setting drive strength. “High” on BA0 is used for EMRS. All the other address pins except A0~1,

A6 and BA0 must be set to low for proper EMRS operation. Refer to the table for specific codes.

BA1 BA0 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 Address Bus

0 1 RFU DS RFU DS DLL Extended Mode Register

A6 A1 Driver Strength A0 DLL Enable

0 0 100% Strength 0 Enable

0 1 60% Strength 1 Disable

1 0 RFU

1 1 30% Strength

BA1 BA0 Operating Mode

0 0 MRS Cycle

0 1 EMRS Cycle

Note: RFU (Reserved for future use) must stay “0” during EMRS cycle.

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M13S128324A (2M)

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Burst Address Ordering for Burst Length

Burst

Length

Starting

Address (A2, A1, A0) Sequential Mode Interleave Mode

xx0 0, 1 0, 1

2 xx1 1, 0 1, 0

x00 0, 1, 2, 3 0, 1, 2, 3

x01 1, 2, 3, 0 1, 0, 3, 2

x10 2, 3, 0, 1 2, 3, 0, 1

x11 3, 0, 1, 2 3, 2, 1, 0

000 0, 1, 2, 3, 4, 5, 6, 7 0, 1, 2, 3, 4, 5, 6, 7

001 1, 2, 3, 4, 5, 6, 7, 0 1, 0, 3, 2, 5, 4, 7, 6

010 2, 3, 4, 5, 6, 7, 0, 1 2, 3, 0, 1, 6, 7, 4, 5

011 3, 4, 5, 6, 7, 0, 1, 2 3, 2, 1, 0, 7, 6, 5, 4

100 4, 5, 6, 7, 0, 1, 2, 3 4, 5, 6, 7, 0, 1, 2, 3

101 5, 6, 7, 0, 1, 2, 3, 4 5, 4, 7, 6, 1, 0, 3, 2

110 6, 7, 0, 1, 2, 3, 4, 5 6, 7, 4, 5, 2, 3, 0, 1

111 7, 0, 1, 2, 3, 4, 5, 6 7, 6, 5, 4, 3, 2, 1, 0

DLL Enable / Disable

The DLL must be enabled for normal operation. DLL enable is required during power-up initialization, and upon returning to

normal operation after having disabled the DLL for the purpose of debug or evaluation (upon exiting Self Refresh Mode, the

DLL is enabled automatically). Any time the DLL is enabled, 200 clock cycles must occur before a READ command can be

issued.

Output Drive Strength

The normal drive strength for all outputs is specified to be SSTL_2, Class II. The device also support reduced drive strength

options, intended for lighter load and/or point-to-point environments.

Mode Register

01 234 567

COMMAND

Precharge

All Banks MRS / EMRS

CLK

Any

Command

MRD

*1: MRS/EMRS can be issued only at all banks precharge state.

*2: Minimum tRP is required to issue MRS/EMRS command.

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M13S128324A (2M)

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Precharge

The precharge command is used to precharge or close a bank that has activated. The precharge command is issued when CS ,

RAS and WE are low and CAS is high at the rising edge of the clock. The precharge command can be used to precharge each

bank respectively or all banks simultaneously. The bank select addresses (BA0, BA1) are used to define which bank is precharged

when the command is initiated. For write cycle, tWR(min) must be satisfied until the precharge command can be issued. After tRP from

the precharge, an active command to the same bank can be initiated.

Burst Selection for Precharge by bank address bits

A8/AP BA1 BA0 Precharge

0 0 0 Bank A Only

0 0 1 Bank B Only

0 1 0 Bank C Only

0 1 1 Bank D Only

1 X X All Banks

No Operation & Device Deselect

The device should be deselected by deactivating the CS signal. In this mode DDR SDRAM should ignore all the control inputs.

The DDR SDRAMs are put in NOP mode when CS is active and by deactivating RAS , CAS and WE . For both Deselect and

NOP the device should finish the current operation when this command is issued.

Bank / Row Active

The Bank Activation command is issued by holding CAS and WE high with CS and RAS low at the rising edge of the clock

(CLK). The DDR SDRAM has two independent banks, so Bank Select addresses (BA0, BA1) are required. The Bank Activation

command must be applied before any Read or Write operation is executed. The Bank Activation command to the first Read or Write

command must meet or exceed the minimum of RAS to CAS delay time (tRCDRD or tRCDWR min). Once a bank has been activated,

it must be precharged before another Bank Activation command can be applied to the same bank. The minimum time interval

between interleaved Bank Activation command (Bank A to Bank B and vice versa) is the Bank to Bank delay time (tRRD min).

Bank Activation Command Cycle ( CAS Latency = 3)

Address

01 23

Command

Bank A

Row Addr. Bank A

Row. Addr.

Bank B

Row Addr.

Bank A

Activate NOP Bank B

Activate NOP Bank A

Activate

RAS-CAS delay (

tRCDW R

)RAS-RAS delay (

tRRD

)

ROW Cycle Time (

tRC

)

:Don'tCare

CLK

NOP

Tn Tn+1 Tn+2

Bank A

Col. Addr.

Write A

with AP

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M13S128324A (2M)

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Read

This command is used after the row activate command to initiate the burst read of data. The read command is initiated by activating

CS , RAS , CAS , and deasserting WE at the same clock rising edge as described in the command truth table. The length of the

burst and the CAS latency time will be determined by the values programmed during the MRS command.

Write

This command is used after the row activate command to initiate the burst write of data. The write command is initiated by activating

CS , RAS , CAS , and WE at the same clock rising edge as describe in the command truth table. The length of the burst will be

determined by the values programmed during the MRS command.

Burst Read Operation

Burst Read operation in DDR SDRAM is in the same manner as the current SDRAM such that the Burst read command is issued by

asserting CS and CAS low while holding RAS and WE high at the rising edge of the clock (CLK) after tRCDRD from the bank

activation. The address inputs determine the starting address for the Burst. The Mode Register sets type of burst (Sequential or

interleave) and burst length (2, 4, 8). The first output data is available after the CAS Latency from the READ command, and the

consecutive data are presented on the falling and rising edge of Data Strobe (DQS) adopted by DDR SDRAM until the burst length

is completed.

Burst Write Operation

The Burst Write command is issued by having CS , CAS and WE low while holding RAS high at the rising edge of the clock

(CLK). The address inputs determine the starting column address. There is no write latency relative to DQS required for burst write

cycle. The first data of a burst write cycle must be applied on the DQ pins tDS prior to data strobe edge enabled after tDQSS from the

rising edge of the clock (CLK) that the write command is issued. The remaining data inputs must be supplied on each subsequent

falling and rising edge of Data Strobe until the burst length is completed. When the burst has been finished, any additional data

supplied to the DQ pins will be ignored.

Note * 1: The specific requirement is that DQS be valid (High or Low) on or before this CLK edge. The case shown (DQS going from

High-Z to logic Low) applies when no writes were previously in progress on the bus. If a previous write was in progress, DQS

could be High at this time, depending on tDQSS.

01 23 4 5 67 8

COMMAND READ A NOP NOP NOP NOP NOP NOP NOP NOP

CLK

CL K

CAS Latency=3

DQS

DQ's DOUT0 DOUT1 DOUT2 DOUT3

tRPRE tRPST

01 23 4 5 67 8

COMMAND NOP WRITE A NOP NOP NOP NOP NOP NOP

CLK

DQS

DQ's DIN 0

WRITE B

DIN1 DIN2 DIN3

tDQSS max

tWPRES *1

DIN 0 DIN1 DIN2 DIN3

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M13S128324A (2M)

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Read Interrupted by a Read

A Burst Read can be interrupted before completion of the burst by new Read command of any bank. When the previous burst is

interrupted, the remaining addresses are overridden by the new address with the full burst length. The data from the first Read

command continues to appear on the outputs until the CAS latency from the interrupting Read command is satisfied. At this point

the data from the interrupting Read command appears. Read to Read interval is tCCD(min).

Read Interrupted by a Write & Burst Terminate

To interrupt a burst read with a write command, Burst Terminate command must be asserted to avoid data contention on the I/O bus

by placing the DQ’s (Output drivers) in a high impedance state. To insure the DQ’s are tri-stated one cycle before the beginning the

write operation, Burt stop command must be applied at least RU(CL) clocks [RU mean round up to the nearest integer] before the

Write command.

01 234 5678

COMMAND

DQS

DQ's

READ NOP NOP NOP NOP NOP

OUT 0

Burst

Term i nat e

IN 0

OUT 1

IN 1

IN 2

IN 3

CLK

NOP WRITE

The following functionality establishes how a Write command may interrupt a Read burst.

1. For Write commands interrupting a Read burst, a Burst Terminate command is required to stop the read burst and tristate the

DQ bus prior to valid input write data. Once the Burst Terminate command has been issued, the minimum delay to a Write

command = RU(CL) [CL is the CAS Latency and RU means round up to the nearest integer].

2. It is illegal for a Write and Burst Terminate command to interrupt a Read with auto precharge command.

01 234 5678

COMMAND

DQS

DQ's

READ A NOP NOP NOP NOP NOP NOP NOP

DOUT A0

READ B

DOUT A1DOUT B2DOUT B3DOUT B0DOUT B1

CLK

tCCD(min)

Hi -Z

Hi- Z

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Read Interrupted by a Precharge

A Burst Read operation can be interrupted by precharge of the same bank. The minimum 1 clock is required for the read to

precharge intervals. A precharge command to output disable latency is equivalent to the CAS latency.

01 234 5678

COMMAND

DQS

DQ's

READ NOP NOP NOP NOP NOP NOP

OUT 0

Precharge

NOP

Interrupted by precharge

CLK

OUT 1

OUT 2

OUT 3

OUT 4

OUT 5

OUT 6

OUT 7

When a burst Read command is issued to a DDR SDRAM, a Precharge command may be issued to the same bank before the

Read burst is complete. The following functionality determines when a Precharge command may be given during a Read burst and

when a new Bank Activate command may be issued to the same bank.

1. For the earliest possible Precharge command without interrupting a Read burst, the Precharge command may be given on the

rising clock edge which is CL clock cycles before the end of the Read burst where CL is the CAS Latency. A new Bank

Activate command may be issued to the same bank after tRP (RAS precharge time).

2. When a Precharge command interrupts a Read burst operation, the Precharge command may be given on the rising clock

edge which is CL clock cycles before the last data from the interrupted Read burst where CL is the CAS Latency. Once the

last data word has been output, the output buffers are tristated. A new Bank Activate command may be issued to the same

bank after tRP.

3. For a Read with auto precharge command, a new Bank Activate command may be issued to the same bank after tRP where tRP

begins on the rising clock edge which is CL clock cycles before the end of the Read burst where CL is the CAS Latency.

During Read with auto precharge, the initiation of the internal precharge occurs at the same time as the earliest possible

external Precharge command would initiate a precharge operation without interrupting the Read burst as described in 1 above.

4. For all cases above, tRP is an analog delay that needs to be converted into clock cycles. The number of clock cycles between a

Precharge command and a new Bank Activate command to the same bank equals tRP / tCK (where tCK is the clock cycle time)

with the result rounded up to the nearest integer number of clock cycles.

In all cases, a Precharge operation cannot be initiated unless tRAS (min) [minimum Bank Activate to Precharge time] has been

satisfied. This includes Read with auto precharge commands where tRAS (min) must still be satisfied such that a Read with auto

precharge command has the same timing as a Read command followed by the earliest possible Precharge command which does

not interrupt the burst.

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Write Interrupted by a Write

A Burst Write can be interrupted before completion of the burst by a new Write command, with the only restriction that the interval

that separates the commands must be at least one clock cycle. When the previous burst is interrupted, the remaining addresses are

overridden by the new address and data will be written into the device until the programmed burst length is satisfied.

01 234 5678

COMMAND

DQS

DQ's

NOP NOP NOP NOP NOP NO P N O P

DIN A0

WRITE A

DIN A1 DIN B2 DIN B3DIN B0 DIN B1

CLK

1tCK

Hi-Z

Hi- Z

WRITE B

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Write Interrupted by a Read & DM

A burst write can be interrupted by a read command of any bank. The DQ’s must be in the high impedance state at least one clock

cycle before the interrupting read data appear on the outputs to avoid data contention. When the read command is registered, any

residual data from the burst write cycle must be masked by DM. The delay from the last data to read command (tWTR) is required to

avoid the data contention DRAM inside. Data that are presented on the DQ pins before the read command is initiated will actually be

written to the memory. Read command interrupting write can not be issued at the next clock edge of that of write command.

01 234 5678

COMMAND

DQS

DQ's

DQS

DQ's

NOP NOP NOP NOP READ NOP

DQSS(max

)

IN0

WRITE

DQSS(min)

CLK

NOP NOP

Hi-Z

WPRES

WTR

Hi-Z

WTR

WPRES

IN1

IN2

IN3

IN4

IN5

IN6

IN7

OUT0

OUT1

OUT0

OUT1

IN0

IN1

IN2

IN3

IN4

IN5

IN6

IN7

The following functionality established how a Read command may interrupt a Write burst and which input data is not written into the

memory.

1. For Read commands interrupting a Write burst, the minimum Write to Read command delay is 2 clock cycles. The case where the

Write to Read delay is 1 clock cycle is disallowed.

2. For read commands interrupting a Write burst, the DM pin must be used to mask the input data words which immediately precede

the interrupting Read operation and the input data word which immediately follows the interrupting Read operation.

3. For all cases of a Read interrupting a Write, the DQ and DQS buses must be released by the driving chip (i.e., the memory controller)

in time to allow the buses to turn around before the SDRAM drives them during a read operation.

4. If input Write data is masked by the Read command, the DQS inputs are ignored by the DDR SDRAM.

5. Refer to “Burst write operation”

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Write Interrupted by a Precharge & DM

A burst write operation can be interrupted before completion of the burst by a precharge of the same bank. Random column access

is allowed. A write recovery time (tWR) is required from the last data to precharge command. When precharge command is asserted,

any residual data from the burst write cycle must be masked by DM.

01 234 5678

COMMAND

DQS

DQ's

DQS

DQ's

NOP NOP NOP NOP NOP

INA0

WRITE A

CLK

Precharge A

Hi-Z

WPRES *5

Hi-Z

NOP WRITE B

WPRES *5

DQSS(max

)

DQSS(min)

INA1

INA2

INA3

INA4

INA5

INA6

INA7

INB0

INB1

INA0

INA1

INA2

INA3

INA4

INA5

INA6

INA7

Precharge timing for Write operations in DRAMs requires enough time to allow “write recovery” which is the time required by a DRAM

core to properly store a full “0” or “1” level before a Precharge operation. For DDR SDRAM, a timing parameter, tWR, is used to indicate

the required of time between the last valid write operation and a Precharge command to the same bank.

tWR starts on the rising clock edge after the last possible DQS edge that strobed in the last valid and ends on the rising clock edge that

strobes in the precharge command.

1. For the earliest possible Precharge command following a Write burst without interrupting the burst, the minimum time for write

recovery is defined by tWR.

2. When a precharge command interrupts a Write burst operation, the data mask pin, DM, is used to mask input data during the time

between the last valid write data and the rising clock edge in which the Precharge command is given. During this time, the DQS input

is still required to strobe in the state of DM. The minimum time for write recovery is defined by tWR.

3. For a Write with auto precharge command, a new Bank Activate command may be issued to the same bank after tWR + tRP where tWR

+ tRP starts on the falling DQS edge that strobed in the last valid data and ends on the rising clock edge that strobes in the Bank

Activate commands. During write with auto precharge, the initiation of the internal precharge occurs at the same time as the earliest

possible external Precharge command without interrupting the Write burst as described in 1 above.

4. In all cases, a Precharge operation cannot be initiated unless tRAS(min) [minimum Bank Activate to Precharge time] has been satisfied.

This includes Write with auto precharge commands where tRAS(min) must still be satisfied such that a Write with auto precharge

command has the same timing as a Write command followed by the earliest possible Precharge command which does not interrupt

the burst.

5. Refer to “Burst write operation”

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Burst Terminate

The burst terminate command is initiated by having RAS and CAS high with CS and WE low at the rising edge of the clock

(CLK). The burst terminate command has the fewest restrictions making it the easiest method to use when terminating a burst read

operation before it has been completed. When the burst terminate command is issued during a burst read cycle, the pair of data and

DQS (Data Strobe) go to a high impedance state after a delay which is equal to the CAS latency set in the mode register. The

burst terminate command, however, is not supported during a write burst operation.

01 234 5678

COMMAND READ A NOP NOP NOP NOP NOP NOP NOP

Burst

Te r mi n a t e

CLK

DQS

DQ's D

OUT 0

Hi-Z

The burst read ends after a deley equal to the CAS lantency.

OUT 1

The Burst Terminate command is a mandatory feature for DDR SDRAMs. The following functionality is required.

1. The BST command may only be issued on the rising edge of the input clock, CLK.

2. BST is only a valid command during Read burst.

3. BST during a Write burst is undefined and shall not be used.

4. BST applies to all burst lengths.

5. BST is an undefined command during Read with auto precharge and shall not be used.

6. When terminating a burst Read command, the BST command must be issued LBST (“BST Latency”) clock cycles before the clock

edge at which the output buffers are tristated, where LBST equals the CAS latency for read operations.

7. When the burst terminates, the DQ and DQS pins are tristated.

The BST command is not byte controllable and applies to all bits in the DQ data word and the (all) DQS pin(s).

DM masking

The DDR SDRAM has a data mask function that can be used in conjunction with data write cycle. Not read cycle. When the data

mask is activated (DM high) during write operation, DDR SDRAM does not accept the corresponding data. (DM to data-mask

latency is zero) DM must be issued at the rising or falling edge of data strobe.

01 234 5678

COMMAND WRITE NOP NOP NOP NOP NOP NOP NOP

CLK

NOP

DQS

DQ's

DQSS

IN 0

Hi-Z

mas

ed b

IN 1

IN 2

IN 3

IN 4

IN 5

IN 6

IN 7

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Read with Auto Precharge

If a read with auto precharge command is initiated, the DDR SDRAM automatically enters the precharge operation BL/2 clock later

from a read with auto precharge command when tRAS (min) is satisfied. If not, the start point of precharge operation will be delayed

until tRAS (min) is satisfied. Once the precharge operation has started the bank cannot be reactivated and the new command can not

be asserted until the precharge time (tRP) has been satisfied.

01 234 56789

COMMAND Bank A

ACTIVE NOP NOP NOP NOP NOP NOP NOP

Read A

Auto Precharge

CLK

DQS

DQ's

CAS Latency = 2

CAS Latency = 2.5

OUT 0

NOP

* Bank can be reactivated at

completion of precharge

Auto-Precharge starts

Hi-Z

RAS (min)

OUT 1

OUT 2

OUT 3

DQS

DQ's D

OUT 0

Hi-Z

Hi-Z D

OUT 1

OUT 2

OUT 3

When the Read with Auto Precharge command is issued, new command can be asserted at 4, 5 and 6 respectively as follow.

For the same bank For the different bank

Asserted

Command 4 5 6 4 5 6

READ READ Illegal Illegal Legal Legal Legal

READ with AP*1 READ with AP Illegal Illegal Legal Legal Legal

Active Illegal Illegal Illegal Legal Legal Legal

Precharge Legal Legal Illegal Legal Legal Legal

Note 1: AP = Auto Precharge

ESMT

M13S128324A (2M)

Operation Temperature Condition -40°C~85°C

Elite Semiconductor Memory Technology Inc. Publication Date : Dec. 2010

Revision : 1.0 26/48

Write with Auto Precharge

If A8 is high when write command is issued, the write with auto-precharge function is performed. Any new command to the same

bank should not be issued until the internal precharge is completed. The internal precharge begins at the rising edge of the CLK with

the tWR delay after the last data-in.

01 234 5678

COMMAND

DQS

DQ's

Bank A

ACTIVE

NOP NOP NOP NOP NOP NOP NOP

IN 0

Write A

Auto Precharge

*Bank can be reactivated

at completion of t

Internal precharge start

CLK

IN 1

IN 2

IN 3

At burst read / write with auto precharge, CAS interrupt of the same bank is illegal.

For the same bank For the different bank

Asserted

Command 4 5 6 7 8 4 5 6 7 8

WRITE WRITE WRITE Illegal Illegal Illegal Legal Legal Legal Legal Legal

WRITE with AP*1 WRITE

with AP

WRITE

with AP Illegal Illegal Illegal Legal Legal Legal Legal Legal

READ Illegal READ +

DM*2

READ+

DM READ Illegal Illegal Illegal Illegal Legal Legal

READ with AP Illegal READ

with AP+

READ

with AP+

READ

with AP Illegal Illegal Illegal Illegal Legal Legal

Active Illegal Illegal Illegal Illegal Illegal Legal Legal Legal Legal Legal

Precharge Illegal Illegal Illegal Illegal Illegal Legal Legal Legal Legal Legal

Note: 1. AP = Auto Precharge

2. DM: Refer to “Write Interrupted by a Read & DM“

ESMT

M13S128324A (2M)

Operation Temperature Condition -40°C~85°C

Elite Semiconductor Memory Technology Inc. Publication Date : Dec. 2010

Revision : 1.0 27/48

Auto Refresh & Self Refresh

Auto Refresh

An auto refresh command is issued by having CS , RAS and CAS held low with CKE and WE high at the rising edge of the

clock (CLK). All banks must be precharged and idle for tRP(min) before the auto refresh command is applied. No control of the

external address pins is requires once this cycle has started because of the internal address counter. When the refresh cycle has

completed, all banks will be in the idle state. A delay between the auto refresh command and the next activate command or

subsequent auto refresh command must be greater than or equal to the tRFC(min).

A maximum of eight consecutive AUTO REFRESH commands (with tRFC(min)) can be posted to any given DDR SDRAM meaning

that the maximum absolute interval between any AUTO REFRESH command and the next AUTO REFRESH command is 8 x tREFI .

COMMAND

CKE = High

PRE

Auto

Refresh

CMD

RFC

CLK

Self Refresh

A self refresh command is defines by having CS , RAS , CAS and CKE held low with WE high at the rising edge of the clock

(CLK). Once the self refresh command is initiated, CKE must be held low to keep the device in self refresh mode. During the self

refresh operation, all inputs except CKE are ignored. Since CKE is an SSTL_2 input, VREF must be maintained during self refresh.

The clock is internally disabled during self refresh operation to reduce power consumption. The self refresh is exited by supplying

stable clock input before returning CKE high, asserting deselect or NOP command and then asserting CKE high for longer than tXSRD

for locking of DLL.

COMMAND

CKE

XSNR(min)

Self

Refresh

Auto

Refresh

NOP

CLK

NOP NOP NOP NOP NOP

Note: After self refresh exit, input an auto refresh command immediately.

ESMT

M13S128324A (2M)

Operation Temperature Condition -40°C~85°C

Elite Semiconductor Memory Technology Inc. Publication Date : Dec. 2010

Revision : 1.0 28/48

Power down

Power down is entered when CKE is registered Low (no accesses can be in progress). If power down occurs when all banks are idle,

this mode is referred to as precharge power-down; if power down occurs when there is a row active in any bank, this mode is

referred to as active power-down.

Entering power down deactivates the input and output buffers, excluding CLK, CLK and CKE. In power down mode, CKE Low

must be maintained, and all other input signals are “Don’t Care”. The minimum power down duration is at least 1 tCK + tIS. However,

power down duration is limited by the refresh requirements of the device.

The power down state is synchronously exited when CKE is registered High (along with a NOP or DESELECT command). A valid

command may be applied 1 tCK + tIS after exit from power down.

COMMAND

CKE

CLK

Precharge Read

Enter Precharge

power-down

mode

Active

Exit Precharge

power-down

mode

Enter Active

power-down

mode

Exit Active

power-down

mode

Functional Truth Table

Truth Table – CKE [Note 1~4, 6]

CKE n-1 CKE n Current State COMMAND n ACTION n NOTE

L L Power Down X Maintain Power Down

L L Self Refresh X Maintain Self Refresh 7

L H Power Down NOP or DESELECT Exit Power Down

L H Self Refresh NOP or DESELECT Exit Self Refresh 5, 7

H L All Banks Idle NOP or DESELECT Precharge Power Down Entry

H L Bank(s) Active NOP or DESELECT Active Power Down Entry

H L All Banks Idle AUTO REFRESH Self Refresh Entry

H H See the Truth Tables as follow

Notes:

1. CKE n is the logic state of CKE at clock edge n; CKE n-1 was the state of CKE at the previous clock edge.

2. Current state is the state of DDR SDRAM immediately prior to clock edge n.

3. COMMAND n is the command registered at clock edge n, and ACTION n is the result of COMMAND n.

4. All states and sequences not shown are illegal or reserved.

5. DESELECT and NOP DESELECT or NOP commands should be issued on any clock edges occurring during the tXSNR or

tXSRD period. A minimum of 200 clock cycles is needed before applying any executable command, for the DLL to lock.

6. Operation or timing that is not specified is illegal and after such an event, in order to guarantee proper operation, the DRAM

must be powered down and then restarted through the specified initialization sequence before normal operation can

continue.

7. VREF must be maintained during Self Refresh operation.

ESMT

M13S128324A (2M)

Operation Temperature Condition -40°C~85°C

Elite Semiconductor Memory Technology Inc. Publication Date : Dec. 2010

Revision : 1.0 29/48

Truth Table – Current State Bank n

Current State CS RAS CAS WE COMMAND / ACTION NOTE

Command to Bank n [Note 1~6,13]

H X X X DESELECT (NOP / continue previous operation)

Any L H H H

No Operation (NOP / continue previous operation)

L L H H

ACTIVE (select and activate row)

L L L H AUTO REFRESH 7

Idle

L L L L MODE REGISTER SET 7

L H L H READ (select column & start read burst) 10

L H L L WRITE (select column & start write burst) 10

Row Active

L L H L PRECHARGE (deactivate row in bank or banks) 8

L H L H READ (select column & start new read burst) 10

L H L L WRITE (select column & start write burst) 10, 12

L L H L PRECHARGE (truncate read burst, start precharge) 8

Read

(Auto Precharge

Disabled)

L H H L BURST TERMINATE 9

L H L H READ (select column & start read burst) 10, 11

L H L L WRITE (select column & start new write burst) 10

Write

(Auto Precharge

Disabled) L L H L PRECHARGE (truncate write burst, start precharge) 8, 11

Command to Bank m [Note 1~3, 6,13~15]

H X X X DESELECT (NOP / continue previous operation)

Any L H H H No Operation (NOP / continue previous operation)

Idle X X X X Any command allowed to bank m

L L H H ACTIVE (select and activate row)

L H L H READ (select column & start read burst) 10

L H L L WRITE (select column & start write burst) 10

Row Activating,

Active, or

Precharging

L L H L PRECHARGE

L L H H ACTIVE (select and activate row)

L H L H READ (select column & start new read burst) 10

L H L L WRITE (select column & start write burst) 10, 12

Read

(Auto Precharge

disabled)

L L H L PRECHARGE

L L H H ACTIVE (select and activate row)

L H L H READ (select column & start read burst) 10, 11

L H L L WRITE (select column & start new write burst) 10

Write

(Auto Precharge

disabled)

L L H L PRECHARGE

L L H H ACTIVE (select and activate row)

L H L H READ (select column & start new read burst) 3a, 10

L H L L WRITE (select column & start write burst) 3a, 10, 12

Read with

Auto Precharge

L L H L PRECHARGE

L L H H ACTIVE (select and activate row)

L H L H READ (select column & start read burst) 3a, 10

L H L L WRITE (select column & start new write burst) 3a, 10

Write with

Auto Precharge

L L H L PRECHARGE

ESMT

M13S128324A (2M)

Operation Temperature Condition -40°C~85°C

Elite Semiconductor Memory Technology Inc. Publication Date : Dec. 2010

Revision : 1.0 30/48

Notes:

1. This table applies when CKEn-1 was HIGH and CKEn is HIGH and after tXSNR or tXSRD has been met (if the previous state

was self refresh).

2. This table is bank - specific, except where noted, i.e., the current state is for a specific bank and the commands shown are

those allowed to be issued to that bank when in that state. Exceptions are covered in the notes below.

3. Current state definitions:

Idle: The bank has been precharged, and tRP has been met.

Row Active: A row in the bank has been activated, and tRCDRD or tRCDWR has been met. No data bursts/accesses and

no register accesses are in progress.

Read / Write: A READ / WRITE burst has been initiated, with AUTO PRECHARGE disabled, and has not yet

terminated or been terminated.

Read / Write with Auto Precharge Enabled: See following text, notes 3a, 3b:

3a. For devices which do not support the optional “concurrent auto precharge” feature, the Read with Auto

Precharge Enabled or Write with Auto Precharge Enabled states can each be broken into two parts: the

access period and the precharge period. For Read with Auto Precharge, the precharge period is defined as if

the same burst was executed with Auto Precharge disabled and then followed with the earliest possible

PRECHARGE command that still accesses all of the data in the burst. For Write with Auto Precharge, the

precharge period begins when tWR ends, with tWR measured as if Auto Precharge was disabled. The access

period starts with registration of the command and ends where the precharge period (or tRP) begins. During

the precharge period of the Read with Auto Precharge Enabled or Write with Auto Precharge Enabled states,

ACTIVE, PRECHARGE, READ and WRITE commands to the other bank may be applied; during the access

period, only ACTIVE and PRECHARGE commands to the other bank may be applied. In either case, all other

related limitations apply (e.g., contention between READ data and WRITE data must be avoided).

3b. For devices which do support the optional “concurrent auto precharge” feature, a read with auto precharge

enabled, or a write with auto precharge enabled, may be followed by any command to the other banks, as

long as that command does not interrupt the read or write data transfer, and all other related limitations apply

(e.g., contention between READ data and WRITE data must be avoided.)

4. The following states must not be interrupted by a command issued to the same bank. DESELECT or NOP commands, or

allowable commands to the other bank should be issued on any clock edge occurring during these states. Allowable

commands to the other bank are determined by its current state and Truth Table.

Precharging: Starts with registration of a PRECHARGE command and ends when tRP is met. Once tRP is met, the

bank will be in the idle state.

Row Activating: Starts with registration of an ACTIVE command and ends when tRCDRD or tRCDWR is met. Once tRCDRD

or tRCDWR is met, the bank will be in the ”row active” state.

Read/ Write with Auto -

Precharge Enabled: Starts with registration of a READ / WRITE command with AUTO PRECHARGE enabled and

ends when tRP has been met. Once tRP is met, the bank will be in the idle state.

5. The following states must not be interrupted by any executable command; DESELECT or NOP commands must be applied

on each positive clock edge during these states.

Refreshing: Starts with registration of an AUTO REFRESH command and ends when tRC is met.

Once t

RFC is met, the DDR SDRAM will be in the ”all banks idle” state.

Accessing Mode Register: Starts with registration of a MODE REGISTER SET command and ends when tMRD has

been met. Once tMRD is met, the DDR SDRAM will be in the ”all banks idle” state.

Precharging All: Starts with registration of a PRECHARGE ALL command and ends when tRP is met.

Once t

RP is met, all banks will be in the idle state.

6. All states and sequences not shown are illegal or reserved.

7. Not bank - specific; requires that all banks are idle and no bursts are in progress.

8. May or may not be bank - specific; if multiple banks are to be precharged, each must be in a valid state for precharging.

9. Not bank - specific; BURST TERMINATE affects the most recent READ burst, regardless of bank.

10. Reads or Writes listed in the Command/Action column include Reads or Writes with AUTO PRECHARGE enabled and

Reads or Writes with AUTO PRECHARGE disabled.

11. Requires appropriate DM masking.

12. A WRITE command may be applied after the completion of the READ burst; otherwise, a Burst Terminate must be used to

end the READ prior to asserting a WRITE command,

13. Operation or timing that is not specified is illegal and after such an event, in order to guarantee proper operation, the DRAM

must be powered down and then restarted through the specified initialization sequence before normal operation can

continue.

14. AUTO REFRESH and MODE REGISTER SET commands may only be issued when all banks are idle.

15. A BURST TERMINATE command cannot be issued to another bank; it applies to the bank represented by the current state

only.

ESMT

M13S128324A (2M)

Operation Temperature Condition -40°C~85°C

Elite Semiconductor Memory Technology Inc. Publication Date : Dec. 2010

Revision : 1.0 31/48

Timing Diagram

Basic Timing (Setup, Hold and Access Time @ BL=4, CL=2)

CKE

RAS

CAS

BA0,BA1

ADDR

(A0~An)

DQS

01 234 5678910

HIGH

COMMAND

/AP

BAa BAb

Db0 Db1 Db3

Db2

DQSCK

RPRE

DQSCK

Qa0 Qa1 Qa2 Qa3

RPST

Hi-Z

DQSS

WPRE

DQSH

DQSL

WPST

Hi-Z

READ WRITE

CLK

BAa

ACTIVE

DQSQ

:Don’tcare

Hi-Z

WPRES

10122B32R.B

ESMT

M13S128324A (2M)

Operation Temperature Condition -40°C~85°C

Elite Semiconductor Memory Technology Inc. Publication Date : Dec. 2010

Revision : 1.0 32/48

Multi Bank Interleaving READ (@ BL=4, CL=2)

CKE

RAS

CAS

BA0,BA1

DQS

01 234 5678910

HIGH

COMMAND

/AP

ADDR

(A0~An)

BAa

Qb0 Qb1 Qb3Qb2

ACTIVE

BAb BAa BAb

Ra Rb

Ra Ca Cb

Qa0 Qa1 Qa3

Qa2

ACTIVE READ

READ

CLK

CCD

: Don’t care

10122B32R.B1

RCDRD

RRD

ESMT

M13S128324A (2M)

Operation Temperature Condition -40°C~85°C

Elite Semiconductor Memory Technology Inc. Publication Date : Dec. 2010

Revision : 1.0 33/48

Multi Bank Interleaving WRITE (@ BL=4)

CKE

RAS

CAS

BA0,BA1

DQS

01 234 5678910

HIGH

COMMAND

A8/AP

ADDR

(A0~An)

BAa

Db0 Db1 Db3

Db2

ACTIVE

BAb BAa BAb

Ra Ca Cb

Da0 Da1 Da3

Da2

ACTIVE WRITE

tRCDWR

WRITE

tRRD

tCCD

CLK

Ra Rb

:Don’tcare

10122B32R.B1

tRCDWR

ESMT

M13S128324A (2M)

Operation Temperature Condition -40°C~85°C

Elite Semiconductor Memory Technology Inc. Publication Date : Dec. 2010

Revision : 1.0 34/48

Read with Auto Precharge (@ BL=8)

CKE

RAS

CAS

BA0,BA1

DQS(CL=2)

DQ(CL=2)

01 234 5678910

HIGH

COMMAND

/AP

ADDR

(A0~An)

BAa

Qa4 Qa5 Qa7

Qa6

BAa

tRP

Qa0 Qa1 Qa3

Qa2

ACTIVE

READ

Auto precharge start

Note1

CLK

DQS(CL=2.5)

DQ(CL=2.5) Qa4 Qa5 Qa7

Qa6

Qa0 Qa1 Qa3Qa2

:Don’tcare

10122B32R.B

Note: 1. The row active command of the precharge bank can be issued after tRP from this point.

The new read/write command of another activated bank can be issued from this point.

At burst read/write with auto precharge, CAS interrupt of the same/another bank is illegal.

ESMT

M13S128324A (2M)

Operation Temperature Condition -40°C~85°C

Elite Semiconductor Memory Technology Inc. Publication Date : Dec. 2010

Revision : 1.0 35/48

Write with Auto Precharge (@ BL=8)

CKE

RAS

CAS

BA0,BA1

DQS

01 234 5678910

HIGH

COMMAND

/AP

ADDR

(A0~An)

BAa

Da4 Da5 Da7

Da6

Da0 Da1 Da3

Da2

ACTIVE

WRITE

Auto precharge start

Note1

BAa

CLK

DAL

:Don’tcare

10122B32R.B

Note: 1. The row active command of the precharge bank can be issued after tRP from this point.

The new read/write command of another activated bank can be issued from this point.

At burst read/write with auto precharge, CAS interrupt of the same/another bank is illegal.

ESMT

M13S128324A (2M)

Operation Temperature Condition -40°C~85°C

Elite Semiconductor Memory Technology Inc. Publication Date : Dec. 2010

Revision : 1.0 36/48

Write followed by Precharge (@ BL=4)

CKE

RAS

CAS

BA0,BA1

DQS

01 234 5678910

HIGH

COMMAND

/AP

ADDR

(A0~An)

BAa BAa

Da0 Da1 Da3

Da2

PRE

CHARGE

WRITE

CLK

:Don’tcare

10122B32R.B

ESMT

M13S128324A (2M)

Operation Temperature Condition -40°C~85°C

Elite Semiconductor Memory Technology Inc. Publication Date : Dec. 2010

Revision : 1.0 37/48

Write Interrupted by Precharge & DM (@ BL=8)

CKE

RAS

CAS

BA0,BA1

DQS

01 234 012345

HIGH

COMMAND

A8/AP

ADDR

(A0~An)

BAa BAa

Da0 Da1 Da3

Da2

PRE

CHARGE

WRITE WRITE WRITE

CLK

BAb BAc

Cb Cc

Db0 Db1 Dc1Dc0 Dc3Dc2

tCCD

Da4 Da5 Da7

Da6

:Don’tcare

10122B32R.B

ESMT

M13S128324A (2M)

Operation Temperature Condition -40°C~85°C

Elite Semiconductor Memory Technology Inc. Publication Date : Dec. 2010

Revision : 1.0 38/48

Write Interrupted by a Read (@ BL=8, CL=2)

CKE

RAS

CAS

BA0,BA1

DQS

01 234 5678910

HIGH

COMMAND

BAa

WTR

Da0 Da1 Da3

Da2

WRITE READ

CLK

BAb

Da5

Da4 Qb1 Qb3

Qb2 Qb4 Qb5

/AP

ADDR

(A0~An)

Qb6Qb0 Qb6

:Don’tcare

10122B32R.B

ESMT

M13S128324A (2M)

Operation Temperature Condition -40°C~85°C

Elite Semiconductor Memory Technology Inc. Publication Date : Dec. 2010

Revision : 1.0 39/48

Read Interrupted by Precharge (@ BL=8)

CKE

RAS

CAS

BA0,BA1

DQS(CL=2)

DQ(CL=2)

01 234 5678910

HIGH

COMMAND

/AP

ADDR

(A0~An)

BAa

Qa0 Qa1

READ

BAb

PRE

CHARGE

CLK

Qa2 Qa3 Qa4 Qa5

Vali d

DQS(CL=2.5)

DQ(CL=2.5) Qa0 Qa1 Qa2 Qa3 Qa4 Qa5

2.5 t

Valid

:Don’tcare

10122B32R.B

When a burst Read command is issued to a DDR SDRAM, a Precharge command may be issued to the same bank before the Read

burst is complete. The following functionality determines when a Precharge command may be given during a Read burst and when a

new Bank Activate command may be issued to the same bank.

1. For the earliest possible Precharge command without interrupting a Read burst, the Precharge command may be given on the

rising clock edge which is CL clock cycles before the end of the Read burst where CL is the CAS Latency. A new Bank Activate

command may be issued to the same bank after tRP (RAS Precharge time).

2. When a Precharge command interrupts a Read burst operation, the Precharge command may be given on the rising clock edge

which is CL clock cycles before the last data from the interrupted Read burst where CL is the CAS Latency. Once the last data

word has been output, the output buffers are tri-stated. A new Bank Activate command may be issued to the same bank after

tRP.

ESMT

M13S128324A (2M)

Operation Temperature Condition -40°C~85°C

Elite Semiconductor Memory Technology Inc. Publication Date : Dec. 2010

Revision : 1.0 40/48

Read Interrupted by a Write & Burst Terminate (@ BL=8, CL=2)

CKE

RAS

CAS

BA0,BA1

DQS

01 234 5678910

HIGH

COMMAND

BAa

Qa0 Qa1

READ

Db0 db5

Db1 Db4

Db3Db2 Db6

BAb

Burst

Te rm i n at e WRITE

Db7

CLK

/AP

ADDR

(A0~An) Ca

: Don’t care

10122B32R.B

ESMT

M13S128324A (2M)

Operation Temperature Condition -40°C~85°C

Elite Semiconductor Memory Technology Inc. Publication Date : Dec. 2010

Revision : 1.0 41/48

Read Interrupted by a Read (@ BL=8, CL=2)

CKE

RAS

CAS

BA0,BA1

DQS

01 234 5678910

HIGH

COMMAND

/AP

ADDR

(A0~An)

BAa

Qb2 Qb3 Qb5

Qb4

Qa0 Qa1 Qb1

Qb0

READ

CLK

BAb

Qb7

Qb6

READ

CCD

:Don’tcare

10122B32R.B

ESMT

M13S128324A (2M)

Operation Temperature Condition -40°C~85°C

Elite Semiconductor Memory Technology Inc. Publication Date : Dec. 2010

Revision : 1.0 42/48

DM Function (@ BL=8) only for write

CKE

RAS

CAS

BA0,BA1

DQS

01 234 5678910

HIGH

COMMAND

/AP

ADDR

(A0~An)

BAa

Da4 Da5 Da7

Da6

Da0 Da1 Da3

Da2

WRITE

CLK

:Don’tcare

10122B32R.B

ESMT

M13S128324A (2M)

Operation Temperature Condition -40°C~85°C

Elite Semiconductor Memory Technology Inc. Publication Date : Dec. 2010

Revision : 1.0 43/48

Power up & Initialization Sequence (based on DDR400)

DDQ

REF

A0-A7

A9-An

Power-up:

VDD and

CLK stable

BA0, BA1

Extended

Mode

Set

COMMAND

DQS

MRD

200 cycles of CLK**

Load

Mode

Reset DLL

(with A8=H)

Load

Mode

(with A8=L)

T=200us

(system*)

VDT

>=0

CLK

CKE

NOP

PRE EMRS MRS PRE AR AR MRS ACT

CODE

LVCOMS LOW LEVEL

CODE CODE RA

CODE CODE CODE RA

BA0=L,

BA1=L

BA0=L,

BA1=L

High-Z

DQ High-Z

RFC

MRD

ALL BANKS ALL BANKS

RFC

BA0=H,

BA1=L

:Don’tcare

10122B32R.B

Notes:

* = VTT is not applied directly to the device, however tVTD must be greater than or equal to zero to avoid device latch-up.

** = tMRD is required before any command can be applied, and 200 cycles of CLK are required before an executable command

can be applied. The two Auto Refresh commands may be moved to follow the first MRS but precede the second

PRECHARGE ALL command.

ESMT

M13S128324A (2M)

Operation Temperature Condition -40°C~85°C

Elite Semiconductor Memory Technology Inc. Publication Date : Dec. 2010

Revision : 1.0 44/48

Mode Register Set

CKE

RAS

CAS

BA0,BA1

01 234 5678910

HIGH

DQS

/AP

ADDR

(A0~An)

MRD

CLK

High-Z

Precharge

Command

All Bank

Mode Register Set

Command

Any

Command

ADDRESS KEY

: Don’t care

10122B32R.B

Note: Power & Clock must be stable for 200us before precharge all banks.

ESMT

M13S128324A (2M)

Operation Temperature Condition -40°C~85°C

Elite Semiconductor Memory Technology Inc. Publication Date : Dec. 2010

Revision : 1.0 45/48

Simplified State Diagram

PREALL = Precharge All Banks

MRS = Mode Register Set

EMRS = Extended Mode Register Set

REFS = Enter Self Refresh

REFSX = Exit Self Refresh

REFA = Auto Refresh

CKEL = Enter Power Down

CKEH = Exit Power Down

ACT = Active

Write A = Write with Autoprecharge

Read A = Read with Autoprecharge

PRE = Precharge

ESMT

M13S128324A (2M)

Operation Temperature Condition -40°C~85°C

Elite Semiconductor Memory Technology Inc. Publication Date : Dec. 2010

Revision : 1.0 46/48

PACKING DIMENSIONS

144-BALL FBGA DDR DRAM (12x12mm)

Symbol Dimension in mm Dimension in inch

Min Norm Max Min Norm Max

A 1.14

1.40 0.049 0.055

A1 0.30 0.35 0.40 0.012 0.014 0.016

Φb 0.40 0.45 0.50 0.016 0.018 0.020

D 11.90 12.00 12.10 0.469 0.472 0.476

E 11.90 12.00 12.10 0.469 0.472 0.476

8.80

0.346

8.80

0.346

e 0.80

0.031

aaa 0.10 0.004

bbb 0.10 0.004

ddd 0.12 0.005

eee 0.15 0.004

fff 0.08 0.006

MD/ME 12/12 12/12

ESMT

M13S128324A (2M)

Operation Temperature Condition -40°C~85°C

Elite Semiconductor Memory Technology Inc. Publication Date : Dec. 2010

Revision : 1.0 47/48

Revision History

Revision Date Description

1.0 2010.12.20 Original

ESMT

M13S128324A (2M)

Operation Temperature Condition -40°C~85°C

Elite Semiconductor Memory Technology Inc. Publication Date : Dec. 2010

Revision : 1.0 48/48

Important Notice

No part of this document may be reproduced or duplicated in any form or by any

means without the prior permission of ESMT.

The contents contained in this document are believed to be accurate at the time

of publication. ESMT assumes no responsibility for any error in this document,

and reserves the right to change the products or specification in this document

without notice.

The information contained herein is presented only as a guide or examples for

the application of our products. No responsibility is assumed by ESMT for any

infringement of patents, copyrights, or other intellectual property rights of third

parties which may result from its use. No license, either express , implied or

otherwise, is granted under any patents, copyrights or other intellectual property

rights of ESMT or others.

Any semiconductor devices may have inherently a certain rate of failure. To

minimize risks associated with customer's application, adequate design and

operating safeguards against injury, damage, or loss from such failure, should be

provided by the customer when making application designs.

ESMT's products are not authorized for use in critical applications such as, but

not limited to, life support devices or system, where failure or abnormal operation

may directly affect human lives or cause physical injury or property damage. If

products described here are to be used for such kinds of application, purchaser

must do its own quality assurance testing appropriate to such applications.