SS8050 SS8050 2W Output Amplifier of Portable Radios in Class B Push-pull Operation. * Complimentary to SS8550 * Collector Current: IC=1.5A * Collector Power Dissipation: PC=2W (TC=25C) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Ratings 40 Units V VCEO VEBO Collector-Emitter Voltage 25 V Emitter-Base Voltage 6 IC Collector Current V 1.5 A PC Collector Power Dissipation 1 W TJ Junction Temperature 150 C TSTG Storage Temperature -65 ~ 150 C Electrical Characteristics Ta=25C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC=100A, IE=0 Min. 40 BVCEO Collector-Emitter Breakdown Voltage IC=2mA, IB=0 25 BVEBO Emitter-Base Breakdown Voltage IE=100A, IC=0 6 ICBO Collector Cut-off Current VCB=35V, IE=0 IEBO Emitter Cut-off Current VEB=6V, IC=0 hFE1 hFE2 hFE3 DC Current Gain VCE=1V, IC=5mA VCE=1V, IC=100mA VCE=1V, IC=800mA Typ. Max. Units V V V 45 85 40 100 nA 100 nA 300 VCE (sat) Collector-Emitter Saturation Voltage IC=800mA, IB=80mA 0.5 VBE (sat) Base-Emitter Saturation Voltage IC=800mA, IB=80mA 1.2 V VBE (on) Base-Emitter On Voltage VCE=1V, IC=10mA 1 V Cob Output Capacitance VCB=10V, IE=0, f=1MHz fT Current Gain Bandwidth Product VCE=10V, IC=50mA V 9.0 pF 100 MHz hFE Classification Classification B C D hFE2 85 ~ 160 120 ~ 200 160 ~ 300 (c)2004 Fairchild Semiconductor Corporation Rev. B2, August 2004 SS8050 Typical Characteristics 0.5 1000 0.4 hFE, DC CURRENT GAIN IC[mA], COLLECTOR CURRENT VCE = 1V IB = 3.0mA IB = 2.5mA IB = 2.0mA 0.3 IB = 1.5mA 0.2 IB = 1.0mA 0.1 100 10 IB = 0.5mA 0 0.4 0.8 1.2 1.6 1 0.1 2.0 1 VCE[V], COLLECTOR-EMITTER VOLTAGE 10000 100 IC = 10 IB VCE = 1V VBE(sat) 1000 100 VCE(sat) 10 0.1 1000 Figure 2. DC current Gain IC[mA], COLLECTOR CURRENT VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE 100 IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic 1 10 100 10 1 0.1 0.0 1000 0.2 0.4 0.6 0.8 1.0 1.2 VBE[V], BASE-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage 1000 fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT 1000 IE = 0 f = 1MHz Cob [pF], CAPACITANCE 10 100 10 1 1 10 VCB [V], COLLECTOR-BASE VOLTAGE Figure 5. Collector Output Capacitance (c)2004 Fairchild Semiconductor Corporation 100 VCE = 10V 100 10 1 1 10 100 400 IC[mA], COLLECTOR CURRENT Figure 6. Current Gain Bandwidth Product Rev. B2, August 2004 SS8050 Package Dimensions TO-92 +0.25 4.58 0.20 4.58 -0.15 0.10 14.47 0.40 0.46 1.27TYP [1.27 0.20] 1.27TYP [1.27 0.20] 0.20 (0.25) +0.10 0.38 -0.05 1.02 0.10 3.86MAX 3.60 +0.10 0.38 -0.05 (R2.29) Dimensions in Millimeters (c)2002 Fairchild Semiconductor Corporation Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. (c)2004 Fairchild Semiconductor Corporation Rev. I11