Standard Power MOSFETs 2N6802 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistor 3.5A, 500V loston) = 1.5Q Features: u SOA is power-dissipation limited m Nanosecond switching speeds u Linear transfer characteristics @ High input impedance a Majority carrier device The 2N6802 is an n-channel enhancement-made silicon- gate power MOS field-effect transistor designed for appli- cations such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipo- jar switching transistors requiring high speed and low gate- drive power. This type can be operated directly from an integrated circuit. The 2N6802 is supplied in the JEDEC TO-205AF metal package. MAXIMUM RATINGS, Absolute-Maximum Values (Tc = 25C): *DRAIN-SOURCE VOLTAGE, Vos ...... 0.006 s cece cece cece eee eee DRAIN-GATE VOLTAGE (Res = 20 KO), Voan 00-1 eee eee eee eee *GATE-SOURCE VOLTAGE, Ves ......6 0c cece ence teen teens DRAIN CURRENT: RMS Continuous, Ip At Tc = 25C Loic ccc ccc eee eee eect nennee At Te = 100C ooo eee center ee eet eens Pulsed, lomo... 0. cee cere eee ene tee eee cent nee eeneeee *SOURCE CURRENT: Continuous, Is ..... 2.2.0.2 eee eee eee cee eee eee teen ees Pulsed, Ism .. 6. cece cee teen ee tenet t ee ees *POWER DISSIPATION, Pz: At Te = 25C Loc ccc cree n nee etn en eee een ene et eenen Above To = 25C occ ccc eect cece ne teen nent eenes INDUCTIVE CURRENT, Clamped (L = 100uH), lim 0.02.00. 0. eee OPERATING AND STORAGE TEMPERATURE, Tj, Taig ......----5-- LEAD TEMPERATURE, Ti: At distances 0.063 in. (1.6 mm) from seating plane for 10 s max. ... *In accordance with JEDEC registration data. 3-554 File Number 1905 N-CHANNEL ENHANCEMENT MODE 0 s 92CS -33741 TERMINAL DIAGRAM TERMINAL DESIGNATION GATE SOUFICE DRAIN {CASE) JEDEC TO-205AF Pe cee een ee eee eee e eet tenn eee 500V SS +20V Pe eee eee e eter e tee ence eens 25W eee ee een ene tte tenn e tee eeas 300CStandard Power MOSFETs 2N6802 Electrical Characteristics @ Tc = 25C (Unless Otherwise Specified) See Fig. 10 Vop VID See Fig. 15 (MOSFET switching times are essentially independent of operating temperature.) = Ip = . See Thermal Resistance RirJ _ Junction-to-Case [- J _] 50 Jecw] | Rinya _ Junction-to-Ambient L.-] -_ | .178 [ecw [ Free Air Oparation | Source-Drain Diode Switching Characteristics (Typical) tr Reverse Recovery Time 800 | ns | Ty = 180C, tp = 2.5A, dipidt = 100A/ys Qrr Reverse Recovered Charge 46 | #C [Ty = 150C, ie = 2.5A, dle/dt = 100A/us ton Forward Turn-on Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by Lg + Lp. *JEDEC registered value Pulse Test: Pulse wicth < 300us, Duty Cycle < 2%. us PULSE > x RpSion) wd 5 3 z = 5 z z # 4 oc 2a 3 z z Ty=+ < [4 3 5 Ty = +2590 3 2 ~ Ty = -55C 4.5V ay QG 50 100 150 200 250 300 0 1 2 3 4 5 6 7 Vos. DRAIN-TO-SOURCE VOLTAGE (VOLTS) Vas, GATE-TO-SOURCE VOLTAGE (VOLTS) Fig. 1 - Typical output characteristics. Fig. 2 - Typical transfer characteristics. 3-555Standard Power MOSFETs 2N6802 10 2 1S LIMITED BY Roston) 10 8 3 _ 8 a 3 : 2 =, = e =< a ~ 10 o z = a 3 =e OS Zz, a = Zo Tp = 25C o a ft o = Ty = 150C MAX. s 3 Rinse = 5.0 KV ~ LE PULSE 2 0.05 a2 a 0.01 0 2 4 6 8 10 1002 5 0 20 50 100 200 500 Vps, ORAIN-TO-SOURCE VOLTAGE (VOLTS) Vos, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Fig. 3 - Typical saturation characteristics. Fig. 4 - Maximum safe operating area. e z & 2B z= = KE 10 $s BS 05 oe oe xs az 02 2% 0: a8 28 0 ke z= * t zo 2 oa 2 0.05 ty oo DUTY FACTOR, D= + sz 2 S 0.02 SINGLE PULSE PER UNIT BASE = Ringe = 5.0 066. CW g THERMAL IMPEDANCE) - Tym - To = Pom thet) 0.01 1052 5 4 2 5 10-32 5 2 2 5 112 5 ia 2 5 10 11, SQUARE WAVE PULSE OURATICN (SECONDS) Fig. 5 - Maximum effective transient thermal impedance, junction-to-case versus pulse duration. us PULSE 2 > (p{on} * Roston) MAX. Ty = -55C Ty = 2500 Ty = 25C Ty = 1509C 1: =, ww SF Ty= 1909C dfs, TRANSCONDUCTANCE (SIEMENS) id fo Ty = 259C 1.0 0 2 4 6 8 Ww 12 a ? 2 3 4 Ip. RAIN CURRENT (AMPERES) Vgp. SOURCE-TO-ORAIN VOLTAGE {VOLTS} Fig. 6 - Typical transconductance versus drain current. Fig. 7 - Typical source-drain diode forward voltage. 3-556Standard Power MOSFETs BV oss, ORAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) -40 0 40 80 120 160 Ty, JUNCTION TEMPERATURE (9C) Fig. 8 - Breakdown voltage versus temperature. 2000 Ves 0 ts wee 1600 Cigg = Cyy + Cog, Cus SHORTED Crs = Cog Cy C, Com Co Cr Oy ee + Cog 1200 2 s S C, CAPACITANCE (pF} 400 o 10 20 ww 40 50 Vps, ORAIN-TO-SOURCE VOLTAGE (VOLTS; Fig. 10 - Typical capacitance versus drain-to-source voltage. Rosion) MEASURED WITH CURRENT PULSE OF 2.0 us DURATION. INITIAL Ty = 25C. (HEATING @ [EFFECT OF 2.0 us PULSE 1S MINIMAL.) & ws g bi Ves= ov a y Veg = 20v 77] z 3 3 3 = > o a 2 z | 5 2 7 = "| a = an 1 8 5 10 5 20 28 fp. ORAIN CURRENT (AMPERES) Fig. 12 - Typical on-resistance versus drain current. 2N6802 22 = Aips(on}. ORAIN-TO-SDURCE ON RESISTANCE (NORMALIZED) 3 06 0.2 40 46 80 120 160 Ty, JUNCTION TEMPERATURE (C) Fig. 9 - Typical normalized on-resistance versus temperature. Vs. GATE-TO-SOQUACE VOLTAGE (VOLTS) 0 8 16 24 32 40 Og, TOTAL GATE CHARGE (nt) Fig. 11 - Typical gate charge versus gate-to-source voltage. Jp, DRAIN CURRENT {AMPERES} 2 50 75 100 125 150 Tc, CASE TEMPERATURE (C) Fig. 13 - Maximum drain current versus case temperature. 3-557Standard Power MOSFETs 2N6802 Pp, POWER DISSIPATION (WATTS) G 20 40 60 80 100 120 440 Tc, CASE TEMPERATURE (C) Fig. 14 - Power versus temperature derating curve. be PULSE WIDTH Voston) +10V___ INPUT 50% Vestott) OV INPUT PULSE NPUT PULSE RISE TIME FALL TIME tq ty {on} VOS (aff) eatanttonen He. TEXTRONIX OUTPUT 10% 80108 1623 PULSE osc. Yps(on) -- GEN. " NOTES: WHEN MEASURING RISE TIME, Vggign) SHALL BE AS SPECIFIED ON THE INPUT WAVEFORM. WHEN MEASURING FALL TIME, Vgsioff) SHALL BE SPECIFIED ON THE INPUT WAVEFORM. THE INPUT TRANSITION ANO ORAIN VOLTAGE RE- SPONSE DETECTOR SHALL HAVE RISE ANO FALL RESPONSE TIMES SUCH THAT NOTES: DOUBLING THESE RESPONSES WILL NOT AFFECT THE RESULTS GREATER 1. LHO063 CASE GROUNDED. THAN THE PRECISION OF MEASUREMENT. THE CURRENT SHALL BE SUFFI. 2. GROUNDED CONNECTIONS COMMON TO GROUND PLANE ON BOARD. CIENTLY SMALL SO THAT DOUBLING IT DOES NOT AFFECT TESTS RESULTS 9. PULSE WIDTH 3 us, PERIOD=1 ms, AMPLITUGE=10V. GREATER THAN THE PRECISION OF MEASUREMENT. Fig. 15 - Switching time test circuit. BLOCKING DIODE 47p NOTES: 1. SET Vpg TO THE VALUE SPECIFIED UNDER CETAILS USING A 0.1s PULSE WIDTH WITH A MINIMUM OF 1 MINUTE BETWEEN PULSES. INCREASE Vgg UNTIL THE SPECIFIED VALUE OF 1p AND Vpg ARE OBTAINED. CASE TEMPERATURE = 25C. = 2. SELECT Rg SUCH THAT Ig # Ag = 2.5 1.0 Vide. Fig. 16 - Safe operating test circuit. 3-558High-Reliability Power MOSFETs JAN, JANTX, and JANTXV Solid-State Power Devices The major military specification used for the procurement of standard solid-state devices by the military is MiL-S- 19500, which covers the devices such as discrete transistors, thyristors, and diodes. MIL-S-19500 is the specification for the familiar JAN type solid state devices. Detailed electrical specifications are prepared as needed by the three military services and coordinated by the Defense Electronic Supply Center (DESC). Levels of reliability are defined by MIL-S-19500. JAN types receive Group A, Group B, and Group C lot sampling only, and are the least expensive. JANTX types receive 100 QPL Approved Types JAN, JANTX, and JANTXV percent process conditioning, and power conditioning, and are subjected to lot rejection based on delta parameter criteria in addition to Group A, Group B, and Group C lot sampling. JANTXV types are subjected to 100 percent (JTXV) internal visual inspection in addition to ail of the JANTX tests in accordance with MIL-STD-750 test methods and MIL-S-19500. DESC publishes QPL-19500", a Qualified Products List of all types and suppliers approved to produce and brand devices in accordance with MIL-S-19500. The following tables list approved QPL types and types that are process of testing preliminary to QPL approval by DESC, respectively. Gustom high-reliability selections of Harris Power MOSFETs can also be supplied with similar process and power conditioning tests and delta criteria. Harris is presently qualified on the following devices. Prices and delivery quotations may be obtained from your local sales representative. JAN and JANTX Power MOSFETs N-Channel MIL-S- . Py lo BVoss tos (on) Types 19500/ Package Channel (w) (A) ) 0 2N6756 542 TO-204AA N 76 14 100 0.18 2N8758 542 TQ-204AA N 75 9 200 0.4 2N6760 $42 TO-204AA N 75 5.5 400 1 2N6762 542 TO-204AA N 75 45 500 15 2N6764 543 TO-204AE N 150 38 100 0,055 2N6766 543 TO-204AE N 450 30 200 0.085 2N6768 $43 TO-204AA N 450 14 400 03 2N6770 543 TO-204AA N 150 12 500 04 2N6782 556 TO-205AF N 15 3.5 100 0.6 2N6784 556 TO-205AF N 15 2.25 200 15 2N6788 555 TO-205AF N 20 6 100 0.3 2N6790 55 TO-205AF N 20 3.6 200 0.8 2N6792 555 TO-205AF N 20 2 400 18 2N6794 55 TO-205AF N 20 15 500 3 2N6796 57 TO-205AF N 25 8 100 0.18 2N6798 557 TO-205AF N 25 55 100 0.4 2N6800 557 TO-205AF N 25 3 400 4 2N6802 557 TO-205AF N 25 25 500 45 P-Channel MIL-S- P, Ib BVoss tos (on) Types 49500/ Package Channel w) A) v) a 2N6895 565 TO-205AF Pp 8.33 -15 -100 3.65 2N6896 565 TO-2044A P 60 -6 ~100 0.6 2N6897 565 TO-204AA P 100 -12 -100 0.3 2N6898 565 TO-204AA Pp 150 -25 -100 0.2 2N6849 564 TO-205AF P 25 -6.5 -100 0.3 2N6851 564 TO-205AF P 26 _ 74.0 -200 08 N-Channel Logic- MIL-S- . Py lo BVoss tos (on) Level Types 19500/ Package Channel ~ (A) ) a 2N6901 566 TO-205AF N 8.33 15 100 1.4 2N6902 566 TO-2044A N 7 12 100 02 2N6903 566 TO-205AF N 8.33 15 200 3.65 2N6904 566 TO-204AA N 75 8 200 0.65