© Semiconductor Components Industries, LLC, 2005
October, 2005 − Rev. 1 1Publication Order Number:
BC856BWT1/D
BC856BWT1 Series,
BC857BWT1 Series,
BC858AWT1 Series
Preferred Devices
General Purpose
Transistors
PNP Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SC−70/SOT−323 which is
designed for low power surface mount applications.
Features
Pb−Free Packages are Available
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating Symbol Value Unit
Collector-Emitter Voltage BC856
BC857
BC858
VCEO −65
−45
−30
V
Collector-Base Voltage BC856
BC857
BC858
VCBO −80
−50
−30
V
Emitter−Base Voltage VEBO −5.0 V
Collector Current − Continuous IC−100 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board,
(Note 1) TA = 25°CPD150 mW
Thermal Resistance,
Junction−to−Ambient RqJA 883 °C/W
Junction and Storage Temperature TJ, Tstg 55 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
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SC−70/SOT−323
CASE 419
STYLE 3
MARKING DIAGRAM
Preferred devices are recommended choices for future use
and best overall value.
12
3
COLLECTOR
3
1
BASE
2
EMITTER
See detailed ordering and shipping information in the packag
e
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
1
xx M G
G
xx = Specific Device Code
M = Date Code*
G= Pb−Free Package
*Date Code orientation may vary depending
upon manufacturing location.
(Note: Microdot may be in either location)
BC856BWT1 Series, BC857BWT1 Series, BC858AWT1 Series
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage BC856 Series
(IC = −10 mA) BC857 Series
BC858 Series
V(BR)CEO −65
−45
−30
V
CollectorEmitter Breakdown Voltage BC856 Series
(IC = −10 mA, VEB = 0) BC857B Only
BC858 Series
V(BR)CES −80
−50
−30
V
CollectorBase Breakdown Voltage BC856 Series
(IC = −10 mA) BC857 Series
BC858 Series
V(BR)CBO −80
−50
−30
V
EmitterBase Breakdown Voltage BC856 Series
(IE = −1.0 mA) BC857 Series
BC858 Series
V(BR)EBO −5.0
−5.0
−5.0
V
Collector Cutoff Current (VCB = −30 V)
Collector Cutoff Current (VCB = −30 V, TA = 150°C) ICBO
−15
−4.0 nA
mA
ON CHARACTERISTICS
DC Current Gain BC856A, BC585A
(IC = −10 mA, VCE = −5.0 V) BC856B, BC857B, BC858B
BC857C
(IC = −2.0 mA, VCE = −5.0 V) BC856A, BC858A
BC856B, BC857B, BC858B
BC857C
hFE
125
220
420
90
150
270
180
290
520
250
475
800
CollectorEmitter Saturation Voltage
(IC = −10 mA, IB = −0.5 mA)
(IC = −100 mA, IB = −5.0 mA)
VCE(sat)
−0.3
−0.65
V
BaseEmitter Saturation Voltage
(IC = −10 mA, IB = −0.5 mA)
(IC = −100 mA, IB = −5.0 mA)
VBE(sat)
−0.7
−0.9
V
BaseEmitter On Voltage
(IC = −2.0 mA, VCE = −5.0 V)
(IC = −10 mA, VCE = −5.0 V)
VBE(on) −0.6
−0.75
−0.82
V
SMALL−SIGNAL CHARACTERISTICS
CurrentGain − Bandwidth Product
(IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz) fT100 MHz
Output Capacitance
(VCB = −10 V, f = 1.0 MHz) Cob 4.5 pF
Noise Figure
(IC = −0.2 mA, VCE = −5.0 Vdc, RS = 2.0 kW,
f = 1.0 kHz, BW = 200 Hz)
NF 10 dB
BC856BWT1 Series, BC857BWT1 Series, BC858AWT1 Series
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3
BC857/BC858
Figure 1. Normalized DC Current Gain
IC, COLLECTOR CURRENT (mAdc)
2.0
Figure 2. “Saturation” and “On” Voltages
IC, COLLECTOR CURRENT (mAdc)
−0.2
0.2
Figure 3. Collector Saturation Region
IB, BASE CURRENT (mA)
Figure 4. Base−Emitter Temperature Coefficient
IC, COLLECTOR CURRENT (mA)
−0.6
−0.7
−0.8
−0.9
−1.0
−0.5
0
−0.2
−0.4
−0.1
−0.3
1.6
1.2
2.0
2.8
2.4
−1.2
−1.6
−2.0
−0.02 −1.0 −10
0−20
−0.1
−0.4
−0.8
hFE, NORMALIZED DC CURRENT GAIN
V, VOLTAGE (VOLTS)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VB, TEMPERATURE COEFFICIENT (mV/ C)°θ
1.5
1.0
0.7
0.5
0.3
−0.2 −10 −100
−1.0
TA = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE(on) @ VCE = −10 V
VCE = −10 V
TA = 25°C
−55°C to +125°C
IC = −100 mA
IC = −20 mA
−0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200 −0.1 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100
IC = −200 mAIC = −50 mAIC =
−10 mA
Figure 5. Capacitances
VR, REVERSE VOLTAGE (VOLTS)
10
Figure 6. Current−Gain − Bandwidth Product
IC, COLLECTOR CURRENT (mAdc)
−0.4
1.0
80
100
200
300
400
60
20
40
30
7.0
5.0
3.0
2.0
−0.5
C, CAPACITANCE (pF)
f, CURRENT−GAIN − BANDWIDTH PRODUCT (MHz)
T
TA = 25°C
Cob
Cib
−0.6 −1.0 −2.0 −4.0 −6.0 −10 −20 −30 −40
150
−1.0 −2.0 −3.0 −5.0 −10 −20 −30 −50
VCE = −10 V
TA = 25°C
TA = 25°C
1.0
BC856BWT1 Series, BC857BWT1 Series, BC858AWT1 Series
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4
BC856
Figure 7. DC Current Gain
IC, COLLECTOR CURRENT (mA)
Figure 8. “On” Voltage
IC, COLLECTOR CURRENT (mA)
−0.8
−1.0
−0.6
−0.2
−0.4
1.0
2.0
−0.1 −1.0 −10 −200
−0.2
0.2
0.5
−0.2 −1.0 −10 −200
TJ = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE @ VCE = −5.0 V
Figure 9. Collector Saturation Region
IB, BASE CURRENT (mA)
Figure 10. Base−Emitter Temperature Coefficient
IC, COLLECTOR CURRENT (mA)
−1.0
−1.2
−1.6
−2.0
−0.02 −1.0 −10
0−20
−0.1
−0.4
−0.8
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
VB, TEMPERATURE COEFFICIENT (mV/ C)°θ
−0.2 −2.0 −10 −200
−1.0
TJ = 25°C
IC =
−10 mA
hFE, DC CURRENT GAIN (NORMALIZED)
V, VOLTAGE (VOLTS)
VCE = −5.0 V
TA = 25°C
0−0.5 −2.0 −5.0 −20 −50 −100
−0.05 −0.2 −0.5 −2.0 −5.0
−100 mA
−20 mA
−1.4
−1.8
−2.2
−2.6
−3.0
−0.5 −5.0 −20 −50 −100
−55°C to 125°C
qVB for VBE
−2.0 −5.0 −20 −50 −100
Figure 11. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
40
Figure 12. Current−Gain − Bandwidth Product
IC, COLLECTOR CURRENT (mA)
−0.1 −0.2 −1.0 −50
2.0 −2.0 −10 −100
100
200
500
50
20
20
10
6.0
4.0
−1.0 −10 −100
VCE = −5.0 V
C, CAPACITANCE (pF)
f, CURRENT−GAIN − BANDWIDTH PRODUCT
T
−0.5 −5.0 −20
TJ = 25°C
Cob
Cib
8.0
−50 mA −200 mA
BC856BWT1 Series, BC857BWT1 Series, BC858AWT1 Series
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5
Figure 13. Thermal Response
t, TIME (ms)
1.0
r(t), TRANSIENT THERMAL
2.0 5.01.00.50.20.1
RESISTANCE (NORMALIZED)
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
20 5010 200 500100 1.0k 2.0k 5.0k 10k
Figure 14. Active Region Safe Operating Area
VCE, COLLECTOR−EMITTER VOLTAGE (V)
−200
−1.0
IC, COLLECTOR CURRENT (mA)
TA = 25°C
D = 0.5
0.2
0.1 0.05 SINGLE PULSE
SINGLE PULSE
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
3 ms
TJ = 25°C
ZqJC(t) = r(t) RqJC
RqJC = 83.3°C/W MAX
ZqJA(t) = r(t) RqJA
RqJA = 200°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) RqJC(t)
t1
t2
P(pk)
DUTY CYCLE, D = t1/t2
−100
−50
−10
−5.0
−2.0
−5.0 −10 −30 −45 −65 −100
1 s
BC858
BC857
BC856
The safe operating area curves indicate IC−VCE lim
-
its of the transistor that must be observed for reliable op
-
eration. Collector load lines for specific circuits must fal
l
below the limits indicated by the applicable curve.
The data of Figure 14 is based upon TJ(pk) = 150°C; TC
or TA is variable depending upon conditions. Pulse curve
s
are valid for duty cycles to 10% provided TJ(pk) 150°C
.
TJ(pk) may be calculated from the data in Figure 13. A
t
high case or ambient temperatures, thermal limitation
s
will reduce the power that can be handled to values les
s
than the limitations imposed by the secondary breakdown
.
ORDERING INFORMATION
Device Marking Package Shipping
BC856BWT1 3B SC−70/SOT−323 3,000 / Tape & Reel
BC856BWT1G SC−70/SOT−323
(Pb−Free)
BC857BWT1 3F SC−70/SOT−323 3,000 / Tape & Reel
BC857BWT1G SC−70/SOT−323
(Pb−Free)
BC857CWT1 3G SC−70/SOT−323 3,000 / Tape & Reel
BC857CWT1G SC−70/SOT−323
(Pb−Free)
BC858AWT1 3J SC−70/SOT−323 3,000 / Tape & Reel
BC858AWT1G SC−70/SOT−323
(Pb−Free)
BC858BWT1 3K SC−70/SOT−323 3,000 / Tape & Reel
BC858BWT1G SC−70/SOT−323
(Pb−Free)
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
BC856BWT1 Series, BC857BWT1 Series, BC858AWT1 Series
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6
PACKAGE DIMENSIONS
SC−70 (SOT−323 )
CASE 419−04
ISSUE M
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
1.9
0.075
0.65
0.025
0.65
0.025
0.9
0.035
0.7
0.028 ǒmm
inchesǓ
SCALE 10:1
AA2
De1
b
e
E
A1
c
L
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
0.05 (0.002)
HEDIM
AMIN NOM MAX MIN
MILLIMETERS
0.80 0.90 1.00 0.032
INCHES
A1 0.00 0.05 0.10 0.000
A2 0.7 REF
b0.30 0.35 0.40 0.012
c0.10 0.18 0.25 0.004
D1.80 2.10 2.20 0.071
E1.15 1.24 1.35 0.045
e1.20 1.30 1.40 0.047
0.035 0.040
0.002 0.004
0.014 0.016
0.007 0.010
0.083 0.087
0.049 0.053
0.051 0.055
NOM MAX
L2.00 2.10 2.40 0.079 0.083 0.095
HE
e1 0.65 BSC
0.425 REF
0.028 REF
0.026 BSC
0.017 REF
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