BC856BWT1 Series - ON Semiconductor

October, 2005 − Rev. 1 1Publication Order Number:

BC856BWT1/D

BC856BWT1 Series,

BC857BWT1 Series,

BC858AWT1 Series

Preferred Devices

General Purpose

Transistors

PNP Silicon

These transistors are designed for general purpose amplifier

applications. They are housed in the SC−70/SOT−323 which is

designed for low power surface mount applications.

Features

•Pb−Free Packages are Available

MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

Rating Symbol Value Unit

Collector-Emitter Voltage BC856

BC857

BC858

VCEO −65

−45

−30

Collector-Base Voltage BC856

BC857

BC858

VCBO −80

−50

−30

Emitter−Base Voltage VEBO −5.0 V

Collector Current − Continuous IC−100 mAdc

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR−5 Board,

(Note 1) TA = 25°CPD150 mW

Thermal Resistance,

Junction−to−Ambient RqJA 883 °C/W

Junction and Storage Temperature TJ, Tstg −55 to +150 °C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. FR−5 = 1.0 x 0.75 x 0.062 in.

http://onsemi.com

SC−70/SOT−323

CASE 419

STYLE 3

MARKING DIAGRAM

Preferred devices are recommended choices for future use

and best overall value.

COLLECTOR

BASE

EMITTER

See detailed ordering and shipping information in the packag

dimensions section on page 5 of this data sheet.

ORDERING INFORMATION

xx M G

xx = Specific Device Code

M = Date Code*

G= Pb−Free Package

*Date Code orientation may vary depending

upon manufacturing location.

(Note: Microdot may be in either location)

BC856BWT1 Series, BC857BWT1 Series, BC858AWT1 Series

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage BC856 Series

(IC = −10 mA) BC857 Series

BC858 Series

V(BR)CEO −65

−45

−30

−

Collector−Emitter Breakdown Voltage BC856 Series

(IC = −10 mA, VEB = 0) BC857B Only

BC858 Series

V(BR)CES −80

−50

−30

−

Collector−Base Breakdown Voltage BC856 Series

(IC = −10 mA) BC857 Series

BC858 Series

V(BR)CBO −80

−50

−30

−

Emitter−Base Breakdown Voltage BC856 Series

(IE = −1.0 mA) BC857 Series

BC858 Series

V(BR)EBO −5.0

−5.0

−

Collector Cutoff Current (VCB = −30 V)

Collector Cutoff Current (VCB = −30 V, TA = 150°C) ICBO −

−−

−−15

−4.0 nA

ON CHARACTERISTICS

DC Current Gain BC856A, BC585A

(IC = −10 mA, VCE = −5.0 V) BC856B, BC857B, BC858B

BC857C

(IC = −2.0 mA, VCE = −5.0 V) BC856A, BC858A

BC856B, BC857B, BC858B

BC857C

hFE −

−

125

220

420

150

270

180

290

520

−

250

475

800

−

Collector−Emitter Saturation Voltage

(IC = −10 mA, IB = −0.5 mA)

(IC = −100 mA, IB = −5.0 mA)

VCE(sat) −

−−

−−0.3

−0.65

Base−Emitter Saturation Voltage

(IC = −10 mA, IB = −0.5 mA)

(IC = −100 mA, IB = −5.0 mA)

VBE(sat) −

−−0.7

−0.9 −

−

Base−Emitter On Voltage

(IC = −2.0 mA, VCE = −5.0 V)

(IC = −10 mA, VCE = −5.0 V)

VBE(on) −0.6

−−

−−0.75

−0.82

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz) fT100 − − MHz

Output Capacitance

(VCB = −10 V, f = 1.0 MHz) Cob − − 4.5 pF

Noise Figure

(IC = −0.2 mA, VCE = −5.0 Vdc, RS = 2.0 kW,

f = 1.0 kHz, BW = 200 Hz)

NF − − 10 dB

BC856BWT1 Series, BC857BWT1 Series, BC858AWT1 Series

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BC857/BC858

Figure 1. Normalized DC Current Gain

IC, COLLECTOR CURRENT (mAdc)

2.0

Figure 2. “Saturation” and “On” Voltages

IC, COLLECTOR CURRENT (mAdc)

−0.2

0.2

Figure 3. Collector Saturation Region

IB, BASE CURRENT (mA)

Figure 4. Base−Emitter Temperature Coefficient

IC, COLLECTOR CURRENT (mA)

−0.6

−0.7

−0.8

−0.9

−1.0

−0.5

−0.2

−0.4

−0.1

−0.3

1.6

1.2

2.0

2.8

2.4

−1.2

−1.6

−2.0

−0.02 −1.0 −10

0−20

−0.1

−0.4

−0.8

hFE, NORMALIZED DC CURRENT GAIN

V, VOLTAGE (VOLTS)

VCE, COLLECTOR−EMITTER VOLTAGE (V)

VB, TEMPERATURE COEFFICIENT (mV/ C)°θ

1.5

1.0

0.7

0.5

0.3

−0.2 −10 −100

−1.0

TA = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE(on) @ VCE = −10 V

VCE = −10 V

TA = 25°C

−55°C to +125°C

IC = −100 mA

IC = −20 mA

−0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200 −0.1 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100

IC = −200 mAIC = −50 mAIC =

−10 mA

Figure 5. Capacitances

VR, REVERSE VOLTAGE (VOLTS)

Figure 6. Current−Gain − Bandwidth Product

IC, COLLECTOR CURRENT (mAdc)

−0.4

1.0

100

200

300

400

7.0

5.0

3.0

2.0

−0.5

C, CAPACITANCE (pF)

f, CURRENT−GAIN − BANDWIDTH PRODUCT (MHz)

TA = 25°C

Cob

Cib

−0.6 −1.0 −2.0 −4.0 −6.0 −10 −20 −30 −40

150

−1.0 −2.0 −3.0 −5.0 −10 −20 −30 −50

VCE = −10 V

TA = 25°C

1.0

BC856BWT1 Series, BC857BWT1 Series, BC858AWT1 Series

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BC856

Figure 7. DC Current Gain

IC, COLLECTOR CURRENT (mA)

Figure 8. “On” Voltage

IC, COLLECTOR CURRENT (mA)

−0.8

−1.0

−0.6

−0.2

−0.4

1.0

2.0

−0.1 −1.0 −10 −200

−0.2

0.2

0.5

−0.2 −1.0 −10 −200

TJ = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE @ VCE = −5.0 V

Figure 9. Collector Saturation Region

IB, BASE CURRENT (mA)

Figure 10. Base−Emitter Temperature Coefficient

IC, COLLECTOR CURRENT (mA)

−1.0

−1.2

−1.6

−2.0

−0.02 −1.0 −10

0−20

−0.1

−0.4

−0.8

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

VB, TEMPERATURE COEFFICIENT (mV/ C)°θ

−0.2 −2.0 −10 −200

−1.0

TJ = 25°C

IC =

−10 mA

hFE, DC CURRENT GAIN (NORMALIZED)

V, VOLTAGE (VOLTS)

VCE = −5.0 V

TA = 25°C

0−0.5 −2.0 −5.0 −20 −50 −100

−0.05 −0.2 −0.5 −2.0 −5.0

−100 mA

−20 mA

−1.4

−1.8

−2.2

−2.6

−3.0

−0.5 −5.0 −20 −50 −100

−55°C to 125°C

qVB for VBE

−2.0 −5.0 −20 −50 −100

Figure 11. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

Figure 12. Current−Gain − Bandwidth Product

IC, COLLECTOR CURRENT (mA)

−0.1 −0.2 −1.0 −50

2.0 −2.0 −10 −100

100

200

500

6.0

4.0

−1.0 −10 −100

VCE = −5.0 V

C, CAPACITANCE (pF)

f, CURRENT−GAIN − BANDWIDTH PRODUCT

−0.5 −5.0 −20

TJ = 25°C

Cob

Cib

8.0

−50 mA −200 mA

BC856BWT1 Series, BC857BWT1 Series, BC858AWT1 Series

http://onsemi.com

Figure 13. Thermal Response

t, TIME (ms)

1.0

r(t), TRANSIENT THERMAL

2.0 5.01.00.50.20.1

RESISTANCE (NORMALIZED)

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

0.01

20 5010 200 500100 1.0k 2.0k 5.0k 10k

Figure 14. Active Region Safe Operating Area

VCE, COLLECTOR−EMITTER VOLTAGE (V)

−200

−1.0

IC, COLLECTOR CURRENT (mA)

TA = 25°C

D = 0.5

0.2

0.1 0.05 SINGLE PULSE

SINGLE PULSE

BONDING WIRE LIMIT

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

3 ms

TJ = 25°C

ZqJC(t) = r(t) RqJC

RqJC = 83.3°C/W MAX

ZqJA(t) = r(t) RqJA

RqJA = 200°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) − TC = P(pk) RqJC(t)

P(pk)

DUTY CYCLE, D = t1/t2

−100

−50

−10

−5.0

−2.0

−5.0 −10 −30 −45 −65 −100

1 s

BC858

BC857

BC856

The safe operating area curves indicate IC−VCE lim

its of the transistor that must be observed for reliable op

eration. Collector load lines for specific circuits must fal

below the limits indicated by the applicable curve.

The data of Figure 14 is based upon TJ(pk) = 150°C; TC

or TA is variable depending upon conditions. Pulse curve

are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C

TJ(pk) may be calculated from the data in Figure 13. A

high case or ambient temperatures, thermal limitation

will reduce the power that can be handled to values les

than the limitations imposed by the secondary breakdown

ORDERING INFORMATION

Device Marking Package Shipping†

BC856BWT1 3B SC−70/SOT−323 3,000 / Tape & Reel

BC856BWT1G SC−70/SOT−323

(Pb−Free)

BC857BWT1 3F SC−70/SOT−323 3,000 / Tape & Reel

BC857BWT1G SC−70/SOT−323

(Pb−Free)

BC857CWT1 3G SC−70/SOT−323 3,000 / Tape & Reel

BC857CWT1G SC−70/SOT−323

(Pb−Free)

BC858AWT1 3J SC−70/SOT−323 3,000 / Tape & Reel

BC858AWT1G SC−70/SOT−323

(Pb−Free)

BC858BWT1 3K SC−70/SOT−323 3,000 / Tape & Reel

BC858BWT1G SC−70/SOT−323

(Pb−Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

BC856BWT1 Series, BC857BWT1 Series, BC858AWT1 Series

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PACKAGE DIMENSIONS

SC−70 (SOT−323 )

CASE 419−04

ISSUE M

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

STYLE 3:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

1.9

0.075

0.65

0.025

0.65

0.025

0.9

0.035

0.7

0.028 ǒmm

inchesǓ

SCALE 10:1

AA2

De1

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

0.05 (0.002)

HEDIM

AMIN NOM MAX MIN

MILLIMETERS

0.80 0.90 1.00 0.032

INCHES

A1 0.00 0.05 0.10 0.000

A2 0.7 REF

b0.30 0.35 0.40 0.012

c0.10 0.18 0.25 0.004

D1.80 2.10 2.20 0.071

E1.15 1.24 1.35 0.045

e1.20 1.30 1.40 0.047

0.035 0.040

0.002 0.004

0.014 0.016

0.007 0.010

0.083 0.087

0.049 0.053

0.051 0.055

NOM MAX

L2.00 2.10 2.40 0.079 0.083 0.095

e1 0.65 BSC

0.425 REF

0.028 REF

0.026 BSC

0.017 REF

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BC856BWT1/D

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