NJG1119PB4 W-CDMA Dual LNA GaAs MMIC QGENERAL DESCRIPTION QPACKAGE OUTLINE The NJG1119PB4 is a Dual band LNA IC designed for W-CDMA cellular phone of 2.1GHz and 800MHz band. This IC has a LNA pass-through function to select high gain mode or low gain mode. An ultra small and ultra thin package of FFP12-B4 is adopted. NJG1119PB4 QFEATURES OLow voltage operation +2.7V OLow current consumption 2.4mA typ. @2.1GHz band (High Gain Mode) 2.0mA typ. @800MHz band (High Gain Mode) 4uA typ. @800MHz / 2.1GHz band (Low Gain Mode) OSmall package FFP12-B4 (Package size: 2.0 x 2.0 x 0.65mm typ) [High gain mode] OHigh gain OLow noise figure 14.5dB typ. @fRF =2140MHz 16.0dB typ. @fRF =885MHz 1.7dB typ. @fRF=2140MHz 1.45dB typ. @fRF =885MHz -3.5dBm typ. @ fRF=2140.0+2140.1MHz, Pin=-36dBm -3.5dBm typ. @fRF=885.0+885.1MHz, Pin=-36dBm OHigh Input IP3 [Low gain mode] OGain -4.0dB typ. @fRF=2140MHz -4.5dB typ. @fRF=885MHz 4.0dB typ. @fRF=2140MHz 4.5dB typ. @fRF=885MHz +2.5dBm typ. @fRF=2140.0+2140.1MHz, Pin=-20dBm +2.0dBm typ. @fRF=885.0+885.1MHz, Pin=-20dBm OLow noise figure OHigh Input IP3 QPIN CONFIGURATION (Top View) VINV 9 VCTL1 8 GND 7 RFIN2 RFOUT2 10 6 GND 11 Logic Circuit 2.1GHz Band GND 5 RFIN1 RFOUT1 12 4 800MHz Band GND 1 VCTL2 2 EXTCAP Pin Connection 1. GND 2. VCTL2 3. EXTCAP 4. RFOUT1 (800MHz band) 5. GND 6. RFOUT2 (2.1GHz band) 7. GND 8. VCTL1 9. VINV 10. RFIN2 (2.1GHz band) 11. GND 12. RFIN1 (800MHz band) 3 Note: Specifications and description listed in this catalog are subject to change without prior notice. Ver.2005-08-29 -1- NJG1119PB4 QABSOLUTE MAXIMUM RATINGS (Ta=+25C, Zs=Zl=50) PARAMETERS SYMBOL CONDITIONS RATINGS UNITS Operating voltage VDD 5.0 V Inverter supply voltage VINV 5.0 V Control voltage VCTL 5.0 V Input power Pin +15 dBm Power dissipation PD 300 mW Operating temperature Topr -40~+85 C Storage temperature Tstg -55~+125 C VDD=2.7V QELECTRICAL CHARACTERISTICS 1 (DC) (VDD=VINV=2.7V, Ta=+25C, Zs=Zl=50) PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS Operating voltage VDD 2.5 2.7 4.5 V Inverter supply voltage VINV 2.5 2.7 4.5 V Control voltage1 (High) VCTL1(H) 2.0 2.7 VINV+0.3 V Control voltage1 (Low) VCTL1(L) 0 0 0.8 V Control voltage 2 (High) VCTL2(H) 2.0 2.7 VINV+0.3 V Control voltage 2 (Low) VCTL2(L) 0 0 0.8 V Operating current1 800MHz[High gain mode] Operating current2 2.1GHz[High gain mode] Operating current 3 800M/2.1GHz[Low gain mode] IDD1 VCTL1=2.7V, VCTL2=2.7V - 2.4 2.9 mA IDD2 VCTL1=0V, VCTL2=2.7V - 2.0 2.4 mA IDD3 VCTL1=0 or 2.7V, VCTL2=0V - 4 13 uA Inverter current1 IINV1 RF OFF, VCTL=2.7V - 160 250 uA Inverter current2 IINV2 RF OFF, VCTL=0V - 210 330 uA Control current 1 ICTL1 VCTL1=2.7V - 20 50 uA Control current 2 ICTL2 VCTL2=2.7V - 20 50 uA -2- NJG1119PB4 QELECTRICAL CHARACTERISTICS 2 (2.1GHz band High Gain mode) (VDD=VINV=2.7V, VCTL1=0V, VCTL2=2.7V V, fRF=2140MHz, Ta=+25C, Zs=Zl=50, TEST CIRCUIT) PARAMETERS Small signal gain1 Noise figure1 Pin at 1dB gain compression point1 Input 3rd order intercept point SYMBOL MIN TYP MAX UNITS Gain1 13.0 14.5 16.0 dB NF1 - 1.7 2.0 dB P-1dB(1) -16.0 -14.0 - dBm -6.0 -3.5 - dBm IIP3_1 CONDITIONS f1=fRF, f2=fRF+100kHz, Pin=-36dBm RF Input VSWR1 VSWRI 1 - 1.7 2.2 RF Output VSWR1 VSWRo1 - 1.9 2.5 QELECTRICAL CHARACTERISTICS 3 (2.1GHz band Low Gain mode) (VDD=VINV=2.7V, VCTL1=VCTL2=0V, fRF=2140MHz, Ta=+25C, Zs=Zl=50, TEST CIRCUIT) PARAMETERS Small signal gain2 Noise figure2 Pin at 1dB gain compression point2 Input 3rd order intercept point2 SYMBOL MIN TYP MAX UNITS Gain2 -6.0 -4.0 -2.5 dB NF2 - 4.0 6.0 dB P-1dB(2) +5.0 +11.0 - dBm 0 +2.5 - dBm IIP3_2 CONDITIONS F1=fRF, f2=fRF+100kHz, Pin=-36dBm RF Input VSWR2 VSWRI 2 - 2.0 2.5 RF Output VSWR2 VSWRo2 - 1.6 2.0 -3- NJG1119PB4 QELECTRICAL CHARACTERISTICS 4 (800MHz band High Gain mode) ( VDD=VINV=2.7V, VCTL1=VCTL2=2.7V, fRF=885MHz, Ta=+25C, Zs=Zl=50, TEST CIRCUIT) PARAMETERS Small signal gain1 Noise figure1 Pin at 1dB gain compression point1 Input 3rd order intercept point SYMBOL MIN TYP MAX UNITS Gain3 14.5 16.0 17.5 dB NF3 - 1.45 1.75 dB P-1dB(3) -17.0 -15.0 - dBm -6.0 -3.5 - dBm IIP3_3 CONDITIONS f1=fRF, f2=fRF+100kHz, Pin=-36dBm RF Input VSWR1 VSWRI 3 - 1.6 2.1 RF Output VSWR1 VSWRo3 - 1.7 2.3 QELECTRICAL CHARACTERISTICS 5 (800MHz band Low Gain mode) (VDD=VINV=2.7V, VCTL1=2.7V, VCTL2=0V, fRF=885MHz, Ta=+25C, Zs=Zl=50, TEST CIRCUIT) PARAMETERS Small signal gain2 Noise figure2 Pin at 1dB gain compression point2 Input 3rd order intercept point2 SYMBOL MIN TYP MAX UNITS Gain4 -6.0 -4.0 -3.0 dB NF4 - 4.5 6.5 dB P-1dB(4) +4.0 +9.0 - dBm 1.5 +2.0 - dBm IIP3_4 CONDITIONS F1=fRF, f2=fRF+100kHz, Pin=-36dBm RF Input VSWR2 VSWRI 4 - 1.7 2.3 RF Output VSWR2 VSWRo4 - 1.6 2.1 -4- NJG1119PB4 QTERMINAL INFORMATION No. SYMBOL DESCRIPTION 1 GND 2 VCTL2 3 EXTCAP An external bypass capacitor is required. (Please refer to TEST CIRCUIT.) 4 RFOUT1 Output terminal of 800MHz band. This terminal is also the power supply terminal of the LNA, please use inductor (L3) to connect power supply. 5 GND 6 RFOUT2 7 GND 8 VCTL1 9 VINV Inverter voltage supplies terminal. 10 RFIN2 RF input terminal of 2.1GHz band. The RF signal is input through external matching circuit connected to this terminal. The DC blocking capacitor is not required. 11 GND Ground terminal. (0V) 12 RFIN1 RF input terminal of 800MHz band. The RF signal is input through external matching circuit connected to this terminal. The DC blocking capacitor is not required. Ground terminal. (0V) Control voltage supply terminal. The high level voltage of this terminal selects High Gain Mode. The low level voltage of this terminal selects Low Gain Mode. Ground terminal. (0V) Output terminal of 2.1GHz band. This terminal is also the power supply terminal of the LNA, please use inductor (L7) to connect power supply. Ground terminal. (0V) Control voltage supply terminal. The high level voltage of this terminal selects 800MHz.band. The low level voltage of this terminal selects 2.1GHz band. CAUTION 1) Ground terminal (No.1, 5, 7, 11) should be connected to the ground plane as low inductance as possible. -5- NJG1119PB4 QELECTRICAL CHARACTERISTICS 1 (2.1GHz band High Gain Mode) Pout vs. Pin (f=2140M Hz, V INV =2.7V, V CTL Gain vs. Pin 1=0V, V CTL 2=2.7V) (f=2140M Hz, V 18 5 16 0 14 Pout -5 Gain (dB) Pout (dBm) 10 DD =V -10 -15 -20 DD =V INV =2.7V, V CTL 1=0V, V CTL 2=2.7V) Gain 12 10 8 6 P-1dB(IN)=-14.5dBm P-1dB(IN)=-14.5dBm -25 4 -30 -40 -30 -20 -10 0 2 -40 10 -30 -20 Pin (dBm ) NF vs. frequency (V 4 DD =V IN V =2.7V, V CTL -10 0 10 Pin (dBm ) 1=0V, V CTL Pout, IM3 vs. Pin 2=2.7V) (f=2140+2140.1M Hz, V =V =2.7V, V 1=0V, V 2=2.7V) DD INV CTL C TL 20 3.5 Pout, IM 3 (dBm) Noise Figure (dB) 0 3 2.5 NF 2 1.5 Pout -20 -40 -60 1 IM3 -80 0.5 0 IIP3=-3.1dBm -100 2 2.05 2.1 2.15 2.2 2.25 2.3 -40 -30 -20 frequency (GHz) -10 0 10 Pin (dBm ) P-1dB(IN) vs. frequency OIP3, IIP3 vs. frequency (V (df=100kHz, P in=-36dBm , V =V =2.7V, V 1=0V, V 2=2.7V) DD INV CTL CTL 13 2 12 -8 1 DD =V IN V =2.7V, V CTL 1=0V, V CTL 2=2.7V) -10 0 10 -1 9 -2 IIP3 8 -3 7 -4 6 -5 5 -6 2.1 2.12 2.14 2.16 frequency (GHz) -6- 2.18 2.2 P-1dB(IN) (dBm) 11 IIP3 (dBm) OIP3 (dBm ) OIP3 -12 P-1dB(IN) -14 -16 -18 -20 -22 2.1 2.12 2.14 2.16 frequency (GHz) 2.18 2.2 NJG1119PB4 QELECTRICAL CHARACTERISTICS 2 (2.1GHz band High Gain Mode) O IP3, IIP3 vs. Temperature =V INV =2.7V, V CTL 1=0V, V CTL 2=2.7V) 16 Gain Gain (dB) 15 14 INV =2.7V, V CTL 1=0V, V CTL 2=2.7V) 2 4 12 1 3.5 11 2.5 NF OIP3 0 10 -1 9 -2 8 -3 12 2 11 1.5 7 -4 10 1 6 -5 9 -50 0 5 -50 0.5 100 50 IIP3 0 Tem perature ( C) VSW R vs. Tem perature P-1dB(IN) vs. Tem perature (f=2140M Hz, V -6 DD =V INV =2.7V, V CTL 1=0V, V CTL (f=2140M Hz, V 2=2.7V) 4 3.5 -10 3 VSW Ri, VSW Ro -8 -12 P-1dB(IN) -14 -16 0.5 100 INV =2.7V, V CTL 1=0V, V CTL 2=2.7V) VSW Ri VSW Ro 1.5 -20 50 =V 2 1 0 DD 2.5 -18 -22 -50 -6 100 50 o o Tem perature ( C) P-1dB(IN) (dBm ) =V 13 3 13 DD 4.5 OIP3 (dBm ) DD NF (dB) (f=2140M Hz, V 17 (f=2140+2140.1M Hz, Pin=-36dBm , V IIP3 (dBm ) Gain, NF vs. Temperature 0 -50 0 50 100 o o Tem perature ( C) Tem perature ( C) IDD vs. Temperature (V 4 DD =V INV =2.7V, V CTL 1=0V, V CTL 2=2.7V, PRF=OFF) 3.5 IDD (mA) 3 2.5 IDD 2 1.5 1 0.5 0 -50 0 50 100 o Tem perature ( C) -7- NJG1119PB4 QELECTRICAL CHARACTERISTICS 3(2.1GHz band High Gain Mode) -8- NJG1119PB4 QELECTRICAL CHARACTERISTICS 4(2.1GHz band High Gain Mode) k factor vs. frequency (V 20 DD =V IN V =2.7V, V CTL 1=0V, V CTL 2=2.7V) k factor 15 10 5 0 0 5 10 15 20 frequency (GHz) -9- NJG1119PB4 QELECTRICAL CHARACTERISTICS 5(2.1GHz band Low Gain Mode) Pout vs. Pin (f=2140M Hz, V 10 DD =V INV =2.7V, V CTL Gain vs. Pin 1=0V, V CTL 2=0V) (f=2140M Hz, V 0 0 -2 -10 -4 DD =V INV =2.7V, V CTL 1=0V, V CTL 2=0V) Gain (dB) Pout (dBm) Gain Pout -20 -30 -6 -8 P-1dB(IN)=+11.0dBm -40 -10 -50 P-1dB(IN)=+11.0dBm -12 -40 -30 -20 -10 0 10 20 -40 -30 -20 Pin (dBm ) 8 DD =V INV =2.7V, V CTL 0 10 20 Pout, IM3 vs. Pin NF vs. frequency (V -10 Pin (dBm ) 1=0V, V CTL (f=2140+2140.1M Hz, V 2=0V) 20 DD =V INV =2.7V, V CTL 1=0V, V C TL 2=0V) 7 Pout, IM 3 (dBm) Noise Figure (dB) 0 6 NF 5 4 3 -20 Pout -40 -60 IM3 2 -80 IIP3=+2.8dBm 1 -100 0 2 2.05 2.1 2.15 2.2 2.25 -40 2.3 -30 -20 OIP3, IIP3 vs. frequency (df=100kHz, Pin=-20dBm , V =V IN V =2.7V, V CTL 1=0V, V 2=0V) 2 10 18 OIP3 6 -2 -4 4 IIP3 -6 2 -8 0 -2 2.12 2.14 2.16 frequency (GHz) 2.18 2.2 IIP3 (dBm) 8 P-1dB(IN) (dBm) 20 -10 - 10 - (V 12 2.1 0 10 P-1dB(IN) vs. frequency CTL 4 0 OIP3 (dBm ) DD -10 Pin (dBm ) frequency (GHz) DD =V INV =2.7V, V CTL 1=0V, V CTL 2=0V) 16 14 P-1dB(IN) 12 10 8 6 4 2.1 2.12 2.14 2.16 frequency (GHz) 2.18 2.2 NJG1119PB4 QELECTRICAL CHARACTERISTICS 6(2.1GHz band Low Gain Mode) G ain vs. Tem perature (f=2140M Hz, V -3 DD =V INV =2.7V, V CTL 1=0V, V O IP3, IIP3 vs. Temperature CTL Gain 10 -6 7 6 -7 NF -8 5 -9 4 -10 3 -11 -50 0 OIP3 (dBm ) 8 NF (dB) Gain (dB) 5 INV =2.7V, V 1=0V, V CTL 2=0V) 0 15 -5 10 5 -10 IIP3 0 -15 2 100 50 -20 -50 0 DD =V INV =2.7V, V CTL -5 100 50 o Tem perature ( C) VSW R vs. Temperature P-1dB(IN) vs. Temperature (f=2140M Hz, V 20 OIP3 Tem perature ( C) 1=0V, V CTL (f=2140M Hz, V 2=0V) 4 DD =V INV =2.7V, V CTL 1=0V, V 3.5 16 VSW Ri, VSW Ro P-1dB(IN) 10 8 CTL 2=0V) VSW Ri VSW Ro 3 14 12 CTL 25 o P-1dB(IN) (dBm) =V 9 -5 18 DD 10 IIP3 (dBm ) -4 (f=2140+2140.1M Hz, Pin=-20dBm , V 2=0V) 2.5 2 1.5 1 6 0.5 4 -50 0 50 100 0 -50 0 50 100 o o Tem perature ( C) Tem perature ( C) IDD vs. Temperature (V 30 DD =V INV =2.7V, V CTL 1=0V, V CTL 2=0V, PRF=OFF) 25 IDD (uA) 20 15 10 IDD 5 0 -50 0 50 100 o Tem perature ( C) - 11 - NJG1119PB4 QELECTRICAL CHARACTERISTICS 7(2.1GHz band Low Gain Mode) - 12 - NJG1119PB4 QELECTRICAL CHARACTERISTICS 8(2.1GHz band Low Gain Mode) k factor vs. frequency (V 20 DD =V INV =2.7V, V CTL 1=0V, V CTL 2=0V) k factor 15 10 5 0 0 5 10 15 20 frequency (GHz) - 13 - NJG1119PB4 QELECTRICAL CHARACTERISTICS 9(800MHz band High Gain Mode) Pout vs. Pin (f=885M Hz, V 10 DD =V INV =2.7V, V CTL Gain vs. Pin 1=2.7V, V CTL (f=885M Hz, V 2=2.7V) 20 18 5 =V INV =2.7V, V CTL 1=2.7V, V CTL 2=2.7V) Gain 16 Gain (dB) 0 Pout (dBm) DD Pout -5 -10 -15 14 12 10 8 P-1dB(IN)=-15.0dBm -20 4 -40 -25 -40 -30 -20 -10 0 P-1dB(IN)=-15.0dBm 6 10 -30 -20 4 DD =V IN V =2.7V, V CTL 0 10 Pout, IM3 vs. Pin NF vs. frequency (V -10 Pin (dBm ) Pin (dBm ) 1=2.7V, V CTL 2=2.7V) (f=885+885.1M Hz, V =V =2.7V, V 1=2.7V, V 2=2.7V) DD IN V CTL CTL 20 3.5 Pout, IM 3 (dBm) Noise Figure (dB) 0 3 2.5 2 NF 1.5 Pout -20 -40 -60 IM 3 1 -80 IIP3=-3.6dBm 0.5 0 0.75 -100 0.8 0.85 0.9 0.95 1 -40 -30 -20 frequency (GHz) OIP3, IIP3 vs. frequency (df=100kHz, Pin=-36dBm , V DD =V INV =2.7V, V CTL 1=2.7V, V 15 11 -2 IIP3 -3 9 -4 8 -5 0.87 0.88 0.89 0.9 frequency (GHz) 0.91 -6 0.92 P-1dB(IN) (dBm) -1 0.86 10 DD =V IN V =2.7V, V CTL 1=2.7V, V CTL 2=2.7V) -10 IIP3 (dBm ) OIP3 (dBm ) (V -8 0 12 7 0.85 - 14 - 2=2.7V) 1 OIP3 10 0 P-1dB(IN) vs. frequency CTL 2 14 13 -10 Pin (dBm ) -12 P-1dB(IN) -14 -16 -18 -20 -22 0.85 0.86 0.87 0.88 0.89 frequency (GHz) 0.9 0.91 0.92 NJG1119PB4 QELECTRICAL CHARACTERISTICS 10(800MHz band High Gain Mode) O IP3, IIP3 vs. Temperature Gain, NF vs. Temperature 18 INV =2.7V, V CTL 1=2.7V, V C TL (f=885+885.1M Hz, Pin=-36dBm , V =V =2.7V, V 1=2.7V, V 2=2.7V) DD INV CTL CTL 2 14 2=2.7V) 4.5 16 3.5 12 0 15 3 11 -1 14 2.5 10 -2 NF 13 2 OIP3 (dBm ) 13 Gain NF (dB) 4 17 Gain (dB) DD =V 1 OIP3 IIP3 9 12 1.5 8 -4 11 1 7 -5 10 -50 0 0.5 100 50 6 -50 0 o Tem perature ( C) VSW R vs. Temperature P-1dB(IN) vs. Tem perature (f=885M Hz, V -8 DD =V INV =2.7V, V CTL 1=2.7V, V CTL 2=2.7V) (f=885M Hz, V 4 DD =V INV =2.7V, V CTL 1=2.7V, V 3.5 -10 VSW Ri, VSW Ro P-1dB(IN) -16 -18 CTL 2=2.7V) VSW Ri VSW Ro 3 -12 -14 -6 100 50 o Tem perature ( C) P-1dB(IN) (dBm ) -3 IIP3 (dBm ) (f=885M Hz, V 2.5 2 1.5 1 -20 0.5 -22 -50 0 50 100 o 0 -50 0 50 100 o Tem perature ( C) Tem perature ( C) IDD vs. Tem perature (V 5 DD =V INV =2.7V, V CTL 1=2.7V, V CTL 2=2.7V, PRF=OFF) IDD (mA) 4 3 IDD 2 1 0 -50 0 50 100 o Tem perature ( C) - 15 - NJG1119PB4 QELECTRICAL CHARACTERISTICS 11(800MHz band High Gain Mode) - 16 - NJG1119PB4 QELECTRICAL CHARACTERISTICS 12(800MHz band High Gain Mode) k factor vs. frequency (V 20 DD =V IN V =2.7V, V CTL 1=2.7V, V CTL 2=2.7V) k factor 15 10 5 0 0 5 10 15 20 frequency (GHz) - 17 - NJG1119PB4 QELECTRICAL CHARACTERISTICS 13(800MHz band Low Gain Mode) Pout vs. Pin (f=885M Hz, V 10 DD =V INV =2.7V, V C TL Gain vs. Pin 1=2.7V, V CTL 2=0V) (f=885M Hz, V 0 =V INV =2.7V, V C TL 1=2.7V, V CTL 2=0V) -2 -10 Gain (dB) Pout (dBm) 0 DD Pout -20 -30 -4 Gain -6 -8 -40 P-1dB(IN)=+9.5dBm -10 -50 P-1dB(IN)=+9.5dBm -12 -40 -30 -20 -10 0 10 20 -40 -30 -20 Pin (dBm ) NF vs. frequency (V 8 DD =V IN V =2.7V, V CTL -10 0 10 20 Pin (dBm ) 1=2.7V, V CTL Pout, IM3 vs. Pin 2=0V) (f=885M Hz, V 20 DD =V INV =2.7V, V C TL 1=2.7V, V CTL 2=0V) 7 Pout, IM 3 (dBm) Noise Figure (dB) 0 6 NF 5 4 3 -20 Pout -40 -60 IM3 2 -80 IIP3=+2.2dBm 1 0 0.75 -100 0.8 0.85 0.9 0.95 1 -40 -30 -20 frequency (GHz) OIP3, IIP3 vs. frequency (df=100kHz, Pin=-20dBm , V DD =V INV =2.7V, V CTL 1=2.7V, V 2 CTL (V 16 10 -4 6 -6 4 IIP3 -8 2 -10 0 0.88 0.89 0.9 frequency (GHz) - 18 - 0.91 -2 0.92 P-1dB(IN) (dBm) 8 IIP3 (dBm) OIP3 (dBm ) -2 0.87 10 DD =V IN V =2.7V, V CTL 1=2.7V, V CTL 2=0V) 14 OIP3 0.86 0 P-1dB(IN) vs. frequency 2=0V) 12 0 -12 0.85 -10 Pin (dBm ) 12 P-1dB(IN) 10 8 6 4 0.85 0.86 0.87 0.88 0.89 frequency (GHz) 0.9 0.91 0.92 NJG1119PB4 QELECTRICAL CHARACTERISTICS 14(800MHz band Low Gain Mode) Gain, NF vs. Temperature -3 =V INV =2.7V, V CTL 1=2.7V, V CTL O IP3, IIP3 vs. Temperature (f=885+885.1MHz, Pin=-20dBm , V 2=0V) Gain 11 10 9 -6 8 -7 7 NF -8 6 -9 5 -10 4 -11 -50 0 16 DD INV CTL 1=2.7V, V CTL 2=0V) 15 -5 10 -10 5 IIP3 -20 0 -5 -25 -50 0 -10 100 50 o Tem perature ( C) CTL VSW R vs. Temperature 2=0V) (f=885M Hz, V 4 DD =V INV =2.7V, V CTL 1=2.7V, V 3.5 14 P-1dB(IN) 10 8 6 C TL 2=0V) VSW Ri VSW Ro 3 12 VSW Ri, VSW Ro P-1dB(IN) (dBm) 1=2.7V, V 0 P-1dB(IN) vs. Tem perature =2.7V, V C TL 20 o =V =2.7V, V OIP3 Tem perature ( C) (f=885M Hz, V INV -15 3 100 50 =V 25 5 OIP3 (dBm ) -5 DD 10 NF (dB) -4 Gain (dB) DD IIP3 (dBm ) (f=885M Hz, V 2.5 2 1.5 1 4 0.5 2 -50 0 50 100 o 0 -50 0 50 100 o Tem perature ( C) Tem perature ( C) IDD vs. Tem perature (V 30 DD =V INV =2.7V, V CTL 1=2.7V, V CTL 2=0V, PRF=OFF) 25 IDD (uA) 20 15 IDD 10 5 0 -50 0 50 100 o Tem perature ( C) - 19 - NJG1119PB4 QELECTRICAL CHARACTERISTICS 15(800MHz band Low Gain Mode) - 20 - NJG1119PB4 QELECTRICAL CHARACTERISTICS 16(800MHz band Low Gain Mode) k factor vs. frequency (V 20 DD =V IN V =2.7V, V CTL 1=2.7V, V CTL 2=0V) k factor 15 10 5 0 0 5 10 15 20 frequency (GHz) - 21 - NJG1119PB4 QTEST CIRCUIT (Top View) VCTL1=0V or 2.7V (Band Select) VINV=2.7V VINV 9 RF IN2 (2.1GHz) L6 4.3nH VCTL1 8 GND 7 RFIN2 RFOUT2 10 2.1GHz Band 11 L2 18nH GND RFIN1 RFOUT1 GND L3 18nH 1 VCTL2 2 EXTCAP L4 33nH C1 6pF 3 C2 1000pF VCTL2=0V or 2.7V (RX ATT) PARTS LIST Parts ID C1~C4 C4 1000pF 4 800MHz Band L1 10nH L1, L3~L5, L7 VDD=2.7V 5 12 1 Pin INDEX Comment TAIYO-YUDEN (HK1005) MURATA (LQW15A) MURATA (GRP15) *: Please use an appropriate inductor for L2, L6, L8 to improve Noise Figure. QTRUTH TABLE "H"=VCTL(H), "L"=VCTL(L) Control voltage 800MHz band 2.1GHz band VCTL1 Band select VCTL2 RX ATT LNA IDD Bypass circuit LNA IDD Bypass circuit L L OFF ON OFF ON L H OFF OFF ON OFF H L OFF ON OFF ON H H ON OFF OFF OFF - 22 - RF OUT2 (2.1GHz) L7 1.8nH Logic Circuit GND L2, L6, L8 C3 20pF 6 L5 2.7nH RF IN1 (800MHz) L8 6.2nH RF OUT1 (800MHz) NJG1119PB4 QRECOMMENDED DESIGN (Top View) RF IN2 (2.1GHz) VCTL1 RF OUT2 (2.1GHz) VINV C3 L5 L7 L8 C4 L6 L3 RF IN1 (800MHz) L1 L2 L4 C1 C2 VDD VCTL2 RF OUT1 (800MHz) PCB (FR-4): t=0.2m MICROSTRIP LINE WIDTH=0.4mm (Z0=50) PCB SIZE=17.0mmx17.0mm - 23 - NJG1119PB4 QPACKAGE OUTLINE (FFP12-B4) 12pin 1pin INDEX (TOP VIEW) 0.25 1pin 2pin INDEX 0.125 0.750.15 2.00.1 0.30 0.17 35 0.20 0.50 0.103 0.303 0. (SIDE VIEW) (BOTTOM VIEW) 0.365 UNIT PCB OVER COAT TERMINAL TREAT WEIGHT : mm : Ceramic : Epoxy resin : Au : 10mg 0.27 2.00.1 Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. * Do NOT eat or put into mouth. * Do NOT dispose in fire or break up this product. * Do NOT chemically make gas or powder with this product. * To waste this product, please obey the relating law of your country. This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these damages. - 24 - [CAUTION] The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights.