NJG1119PB4
-
1
-
NJG1119PB4
4
5
6
789
10
11
12
123
RFIN2
RFIN1
GND
RFOUT1
RFOUT2
GND
GND
GNDVINV
VCTL2
VCTL1
EXTCAP
Logic Circuit
2.1GHz B and
800MHz B and
V er .2005-08-29
W-CDMA Dual LNA GaAs MMIC
QGENERAL DESCRIPTION QP ACKAGE OUTLINE
The NJG1119PB4 is a Dua l band LNA IC designed for W- CDMA
cellular phone of 2.1GHz and 800MH z band.
This IC has a LNA pass-thro ugh function to select high g ain mode
or low gain mode.
An ultra small and ultra thin package of FFP12–B4 is adopted.
QFEATURES
OLow voltage operation +2.7V
OLow current con sumption 2.4mA typ. @2.1GHz band (High Gain Mode)
2.0mA typ. @800MHz band (High Gain Mode)
4uA typ. @800MHz / 2.1GHz band (Low Gain Mode)
OSmall p ackage FFP12-B4 (Package size: 2 .0 x 2.0 x 0.65mm typ)
[High gain mode]
OHigh gain 14.5dB typ. @fRF =2140MHz 16.0dB typ. @fRF =885MHz
OLow noise figure 1.7dB typ. @fRF=2140MHz
1.45dB typ. @fRF =885MHz
OHigh Input IP3 -3.5dBm typ. @ fRF=2140.0+2140.1MHz, Pin=-36d Bm
-3.5dBm typ. @fRF=885.0+885.1MHz, Pin=-36dBm
[Low gain mode]
OGain -4.0dB typ. @fRF=2140MHz
-4.5dB typ. @fRF=885MHz
OLow noise figure 4.0dB typ. @fRF=2140MHz
4.5dB typ. @fRF=885MHz
OHigh Input IP3 +2.5dBm typ. @fRF=2140.0+2140.1MH z, Pin=-20dBm
+2.0dBm typ. @fRF=885.0+885.1MHz, Pin=-20dBm
QPIN CONFIGURA TION
Note: S pecifications and description listed in th is catalog are subject to change without prior notice .
(Top View)
Pin Connection
1. GND
2. VCTL2
3. EXTCAP
4. RFOUT1 (800MHz band)
5. GND
6. RFOUT2 (2.1GHz band)
7. GND
8. VCTL1
9. VINV
10. RFIN2 (2.1GHz band)
11. GND
12. RFIN1 (800MHz band)
NJG1119PB4
-
2
-
QAB SOLUTE MAXIMUM RATINGS (Ta=+25°C, Zs=Zl=50Ω)
PARAMETERS SYMBOL CONDITIONS RATINGS UNITS
Operating voltage VDD 5.0 V
Inverter supply voltage VINV 5.0 V
Control voltage VCTL 5.0 V
Input power Pin VDD=2.7V +15 dBm
Power dissipation PD 300 mW
Operating temperature Topr -40~+85 °C
S torage temperature Tstg -55~+125 °C
QELECTRICAL CHARACTERISTIC S 1 (DC) (VDD=VINV=2.7V, Ta=+25°C, Zs=Zl=50Ω)
PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS
Operating voltage VDD 2.5 2.7 4.5 V
Inverter supply voltage VINV 2.5 2.7 4.5 V
Control voltage1 (High) VCTL1(H) 2.0 2.7 VINV+0.3 V
Control voltage1 (Low) VCTL1(L) 0 0 0.8 V
Control voltage 2 (High) VCTL2(H) 2.0 2.7 VINV+0.3 V
Control voltage 2 (Low) VCTL2(L) 0 0 0.8 V
Operating cu rrent1
800MHz[Hi gh gain mode] IDD1 VCTL1=2. 7V, VCTL2=2.7V - 2.4 2.9 mA
Operating cu rrent2
2.1GHz[High gain mode] IDD2 VCTL1=0V, VCTL2=2.7V - 2.0 2.4 mA
Operating cu rrent 3
800M/2.1GHz[Low gain mo de] IDD3 VCTL1=0 or 2. 7V, VCTL2=0V - 4 13 uA
Inverter current1 IINV1 RF OFF, VCTL=2.7V - 160 250 uA
Inverter current2 IINV2 RF OFF, VCTL=0V - 210 330 uA
Control current 1 ICTL1 VCTL1=2.7V - 20 50 uA
Control current 2 ICTL2 VCTL2=2.7V - 20 50 uA
NJG1119PB4
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3
-
QELECTRICAL CHARACTER ISTICS 2 (2.1GHz band H igh Gain mode)
(VDD=VINV=2.7V, VCTL1=0V, VCTL2=2.7V V, fRF=2140MHz, Ta=+25°C, Zs=Zl=50Ω, TEST CIRCUIT)
PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS
Small signal gain1 Gain1 13.0 14.5 16.0 dB
Noise figure1 NF1 - 1.7 2.0 dB
Pin at 1dB gain
compression point1 P-1dB(1) -16.0 -14.0 - dBm
Input 3rd order
intercept point IIP3_1 f1=fRF, f2=fRF+100kHz,
Pin=-36dBm -6.0 -3.5 - dBm
RF Input VSWR1 VSWRI 1 - 1.7 2.2
RF Output VSWR1 VSWRo1 - 1.9 2.5
QELECTRICAL CHARACTERISTIC S 3 (2.1GHz band Low Gain mode)
(VDD=VINV=2.7V, VCTL1=VCTL2=0V, fRF=2140MHz, Ta=+25°C, Zs=Zl=50Ω, TEST CIRCUIT)
PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS
Small signal gain2 Gain2 -6.0 -4.0 -2.5 dB
Noise figure2 NF2 - 4.0 6.0 dB
Pin at 1dB gain
compression point2 P-1dB(2) +5.0 +11.0 - dBm
Input 3rd order
intercept point2 IIP3_2 F1=fRF, f2=fRF+100kHz,
Pin=-36dBm 0 +2.5 - dBm
RF Input VSWR2 VSWRI 2 - 2.0 2.5
RF Output VSWR2 VSWRo2 - 1.6 2.0
NJG1119PB4
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4
-
QELECTRICAL CHARACTERISTIC S 4 (800MHz band High Gain mode)
( VDD=VINV=2.7V, VCTL1=VCTL2=2.7V, fRF=885MHz, Ta=+25°C, Zs=Zl=50Ω, TEST CIRCUIT)
PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS
Small signal gain1 Gain3 14.5 16.0 17.5 dB
Noise figure1 NF3 - 1.45 1.75 dB
Pin at 1dB gain
compression point1 P-1dB(3) -17.0 -15.0 - dBm
Input 3rd order
intercept point IIP3_3 f1=fRF, f2=fRF+100kHz,
Pin=-36dBm -6.0 -3.5 - dBm
RF Input VSWR1 VSWRI 3 - 1.6 2.1
RF Output VSWR1 VSWRo3 - 1.7 2.3
QELECTRICAL CHARACTERISTIC S 5 (800MHz band Low Gain mode)
(VDD=VINV=2.7V, VCTL1=2.7V, VCTL2=0V, fRF=885MHz, Ta=+25°C, Zs=Zl=50Ω, TEST CIRCUIT)
PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS
Small signal gain2 Gain4 -6.0 -4.0 -3.0 dB
Noise figure2 NF4 - 4.5 6.5 dB
Pin at 1dB gain
compression point2 P-1dB(4) +4.0 +9.0 - dBm
Input 3rd order
intercept point2 IIP3_4 F1=fRF, f2=fRF+100kHz,
Pin=-36dBm 1.5 +2.0 - dBm
RF Input VSWR2 VSWRI 4 - 1.7 2.3
RF Output VSWR2 VSWRo4 - 1.6 2.1
NJG1119PB4
-
5
-
QTERMINAL INFORMA TION
No. SYMBOL DESCRIPTION
1 GND Ground terminal. (0V)
2 VCTL2
Control voltage supply terminal. The high level voltage of this terminal selects High
Gain Mode. The low level voltage of this terminal sele cts Low Gain Mode.
3 EXTCAP An external bypass ca pacitor is r equired. (Please refer to TEST CIRCUIT.)
4 RFOUT1
Output terminal of 800MHz band. This terminal is also the power supply terminal of the
LNA, please use indu ctor (L3) to connect power supp ly.
5 GND Ground terminal. (0V)
6 RFOUT2
Output terminal of 2.1GHz band. This terminal is also the power supply terminal of the
LNA, please use indu ctor (L7) to connect power supp ly.
7 GND Ground terminal. (0V)
8 VCTL1
Control voltage supply terminal. The high level voltage of this terminal selects
800MHz.band. The low level voltage of this ter minal selects 2.1GH z band.
9 VINV Inverter voltage supp lies terminal.
10 RFIN2
RF input terminal of 2.1GHz band. The RF signal is input through external matching
circuit connected to this terminal. The DC blocking capacitor is no t required.
11 GND Ground terminal. (0V)
12 RFIN1
RF input terminal of 800MHz band. The RF signal is input through external matching
circuit connected to this terminal. The DC blocking capacitor is no t required.
CAUTION
1) Ground terminal (No.1, 5, 7 , 11) should be connected to the ground plane as low inductance as possible.
NJG1119PB4
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6
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QELECTRICAL CHARACTER ISTICS 1 (2.1GHz band H igh Gain Mode)
-30
-25
-20
-15
-10
-5
0
5
10
-40 -30 -20 -10 0 10
Pout vs. Pin
Pout (dBm)
Pin (dBm)
P-1dB(IN)=-14.5dBm
Pout
(f=2140MH z, VDD=VINV=2.7V, VCTL1= 0V, VCTL2=2.7V)
2
4
6
8
10
12
14
16
18
-40 -30 -20 -10 0 10
G ain v s . Pi n
Gain (dB)
Pin (dBm)
P-1dB(IN)=-14.5dBm
Gain
(f=2140MH z, VDD=VINV=2.7V, VCTL1= 0V, VCTL2=2.7V)
0
0.5
1
1.5
2
2.5
3
3.5
4
2 2.05 2.1 2.15 2.2 2.25 2.3
N F v s . fre q u en c y
Noise Figure (dB)
frequency (GHz)
NF
(VDD=VINV=2.7V , VCTL1=0V, VCTL2=2.7V)
-100
-80
-60
-40
-20
0
20
-40 -30 -20 -10 0 10
P o ut, IM 3 v s . Pin
Pou t, IM3 (dBm )
Pin (dBm)
IIP3=-3.1dBm
Pout
IM3
(f=2140+2140.1MH z, VDD=VINV=2.7V, VCTL1=0V, V CTL2=2.7V)
5
6
7
8
9
10
11
12
13
-6
-5
-4
-3
-2
-1
0
1
2
2.1 2.12 2.14 2.16 2.18 2.2
O IP3, IIP3 vs . fre q uen c y
OIP3 (dBm)
IIP 3 (d B m)
frequency (GHz)
OIP3
IIP3
(df=100kHz, Pin=-36dBm, VDD=VINV=2.7V, VCTL1=0V, VCTL2=2.7V)
-22
-20
-18
-16
-14
-12
-10
-8
2.1 2.12 2.14 2.16 2.18 2.2
P-1dB (IN) vs. frequen cy
P-1dB(IN) (dBm)
frequency (GHz)
P-1dB(IN)
(VDD=VINV=2.7V , VCTL1=0V, VCTL2=2.7V)
NJG1119PB4
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7
-
QELECTRICAL CHARACTER ISTICS 2 (2.1GHz band H igh Gain Mode)
9
10
11
12
13
14
15
16
17
0.5
1
1.5
2
2.5
3
3.5
4
4.5
-50 0 50 100
Gain , NF v s. Tempera tu r e
Gain (dB)
NF (dB)
Temperature (oC)
(f=2140M H z, VDD=VINV=2.7V, VCTL1=0V, VCTL2=2.7V)
Gain
NF
5
6
7
8
9
10
11
12
13
-6
-5
-4
-3
-2
-1
0
1
2
-50 0 50 100
OIP3 , IIP3 v s . Tempera tu r e
OIP3 (dBm)
IIP 3 ( d Bm)
Temperature (oC)
(f=2140+2140.1MHz, Pin=-36dBm, VDD=VINV=2.7V, VCTL1=0V, VCTL2=2.7V)
OIP3
IIP3
-22
-20
-18
-16
-14
-12
-10
-8
-6
-50 0 50 100
P-1dB(IN) vs. Temperature
P-1 d B (IN ) (d B m)
Tem p erature (oC)
P-1dB(IN)
(f=2140M Hz, VDD=VINV= 2.7V, VCTL1=0V, VCTL2=2.7V)
0
0.5
1
1.5
2
2.5
3
3.5
4
-50 0 50 100
VSW R vs. Temperature
VSWRi
VSWRo
VS WR i, V S WRo
Temperature (oC)
(f=2140M Hz, VDD=VINV=2.7V, VCTL1=0V, VCTL2=2.7V)
0
0.5
1
1.5
2
2.5
3
3.5
4
-50 0 50 100
ID D vs . Tempera tu r e
ID D (m A )
Temperature (oC)
IDD
(VDD=VINV=2.7V, VCTL1=0V, VCTL2=2.7V, PRF=OF F)
NJG1119PB4
-
8
-
QELECTRICAL CHARACTERISTIC S 3(2.1GHz band High Gain Mode)
NJG1119PB4
-
9
-
QELECTRICAL CHARACTERISTIC S 4(2.1GHz band High Gain Mode)
0
5
10
15
20
0 5 10 15 20
k factor vs. frequency
k factor
frequency (GHz)
(VDD=VINV=2.7V , VCTL1=0V, VCTL2=2.7V)
NJG1119PB4
-
10
-
QELECTRICAL CHARACTERISTIC S 5(2.1GHz band Low Gain Mode)
-50
-40
-30
-20
-10
0
10
-40-30-20-10 0 10 20
Pout vs. Pin
Pout (dBm)
Pin (dBm)
P-1dB(IN)=+11.0dBm
Pout
(f=2140MHz, VDD=VINV=2.7V, VCTL1=0V , VCTL2=0V)
-12
-10
-8
-6
-4
-2
0
-40-30-20-10 0 10 20
G ain v s . Pi n
Gain (dB)
Pin (dBm)
P-1dB(IN)=+11.0dBm
Gain
(f=2140MHz, VDD=VINV=2.7V, VCTL1=0V , VCTL2=0V)
-100
-80
-60
-40
-20
0
20
-40 -30 -20 -10 0 10
P o ut, IM 3 v s . Pin
Pou t, IM3 (dBm )
Pin (dBm)
IIP3=+2.8dBm
Pout
IM3
(f=2140+2140.1MH z, VDD=VINV=2.7V, VCTL1=0 V, V CTL2=0V)
4
6
8
10
12
14
16
18
20
2.1 2.12 2.14 2.16 2.18 2.2
P-1dB (IN) vs. frequen cy
P-1dB(IN) (dBm)
frequency (GHz)
P-1dB(IN)
(VDD=VINV=2.7V, VCTL1=0V, VCTL2=0V)
0
1
2
3
4
5
6
7
8
2 2.05 2.1 2.15 2.2 2.25 2.3
N F v s . fre q u en c y
Noise Figure (dB)
frequency (GHz)
NF
(VDD=VINV=2.7V, VCTL1=0V, VCTL2=0V)
-10
-8
-6
-4
-2
0
2
4
-2
0
2
4
6
8
10
12
2.1 2.12 2.14 2.16 2.18 2.2
O IP3, IIP3 vs . fre q uen c y
OIP3 (dBm)
IIP 3 (d B m)
frequency (GHz)
OIP3
IIP3
(df=100kHz, Pin=-20dBm, VDD=VINV=2.7V, VCTL1=0V, VCTL2=0V)
NJG1119PB4
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11
-
QELECTRICAL CHARACTERISTIC S 6(2.1GHz band Low Gain Mode)
-11
-10
-9
-8
-7
-6
-5
-4
-3
2
3
4
5
6
7
8
9
10
-50 0 50 100
G ain vs. Temperature
G a in (d B )
NF (dB)
Temperature (oC)
Gain
NF
(f=2140M Hz, VDD=VINV= 2 .7V , VCTL1=0V , VCTL2=0V)
-20
-15
-10
-5
0
5
10
-5
0
5
10
15
20
25
-50 0 50 100
OIP3 , IIP3 v s . Tempera tu r e
OIP3 (dBm)
IIP 3 ( d Bm)
Temperature (oC)
OIP3
IIP3
(f=2140+2140.1MHz, P in=-20dBm , V DD=VINV=2.7V, VCTL1=0V, VCTL2=0V)
4
6
8
10
12
14
16
18
-50 0 50 100
P -1dB( IN) v s . T em p e r ature
P-1dB(IN) (dBm)
Temperature (oC)
P-1dB(IN)
(f= 2 14 0 MHz , V DD=VINV= 2.7 V , VCTL1=0V, VCTL2=0V)
0
0.5
1
1.5
2
2.5
3
3.5
4
-50 0 50 100
V SW R vs . Temp e ratur e
VSWRi
VSWRo
VS WR i, V S WRo
Temperature (oC)
(f= 2 14 0 MHz , V DD=VINV= 2.7 V , VCTL1=0V, VCTL2=0V)
0
5
10
15
20
25
30
-50 0 50 100
ID D vs . Tempera tu r e
ID D ( u A)
Temperature (oC)
IDD
(VDD=VINV=2.7V, VCTL1=0V, VCTL2=0V, PRF=O FF)
NJG1119PB4
-
12
-
QELECTRICAL CHARACTERISTIC S 7(2.1GHz band Low Gain Mode)
NJG1119PB4
-
13
-
QELECTRICAL CHARACTERISTIC S 8(2.1GHz band Low Gain Mode)
0
5
10
15
20
0 5 10 15 20
k factor vs. frequency
k factor
frequency (GHz)
(VDD=VINV=2.7V, VCTL1=0V, VCTL2=0V)
NJG1119PB4
-
14
-
QELECTRICAL CHARACTERISTIC S 9(800MHz band High Gain Mode)
-25
-20
-15
-10
-5
0
5
10
-40 -30 -20 -10 0 10
Pout vs. Pin
Pout (dBm)
Pin (dBm)
P-1dB(IN)=-15.0dBm
Pout
(f=885MH z, VDD=VINV=2.7V, VCTL1=2.7V, VCTL2=2.7V)
4
6
8
10
12
14
16
18
20
-40 -30 -20 -10 0 10
G ain v s . Pi n
Gain (dB)
Pin (dBm)
P-1dB(IN)=-15.0dBm
Gain
(f=885MH z, VDD=VINV=2.7V, VCTL1=2.7V, VCTL2=2.7V)
0
0.5
1
1.5
2
2.5
3
3.5
4
0.75 0.8 0.85 0.9 0.95 1
N F v s . fre q u en c y
Noise Figure (dB)
frequency (GHz)
NF
(VDD=VINV=2 .7V, VCTL1=2.7V, VCTL2=2.7V)
-100
-80
-60
-40
-20
0
20
-40 -30 -20 -10 0 10
P o ut, IM 3 v s . Pin
Pou t, IM3 (dBm )
Pin (dBm)
IIP3=-3.6dBm
Pout
IM3
(f=885+ 885.1MH z, VDD=VINV=2.7V, VCTL1=2.7V, VCTL2=2.7V)
7
8
9
10
11
12
13
14
15
-6
-5
-4
-3
-2
-1
0
1
2
0.85 0.86 0.87 0.88 0.89 0.9 0.91 0.92
O IP3, IIP3 vs . fre q uen c y
OIP3 (dBm)
IIP 3 ( d B m)
frequency (GHz)
OIP3
IIP3
(df=100kHz, Pin=-36dBm, VDD=VINV=2 .7V, VCTL1=2.7V, VCTL2=2.7V)
-22
-20
-18
-16
-14
-12
-10
-8
0.85 0.86 0.87 0.88 0.89 0.9 0.91 0.92
P-1dB (IN) vs. frequen cy
P-1dB(IN) (dBm)
frequency (GHz)
P-1dB(IN)
(VDD=VINV=2 .7V, VCTL1=2.7V, VCTL2=2.7V)
NJG1119PB4
-
15
-
QELECTRICAL CHARACTERISTIC S 10(800MHz band High Gain Mode)
10
11
12
13
14
15
16
17
18
0.5
1
1.5
2
2.5
3
3.5
4
4.5
-50 0 50 100
Gain, NF vs . T em p er a t u r e
G a in (d B )
NF (dB)
Temperature (oC)
Gain
NF
(f=885M Hz, VDD=VINV=2 .7V , V CTL1=2.7V, VCTL2=2.7V)
6
7
8
9
10
11
12
13
14
-6
-5
-4
-3
-2
-1
0
1
2
-50 0 50 100
OIP3 , IIP3 v s . Tempera tu r e
OIP3 (dBm)
IIP3 ( d B m)
Temperature (oC)
OIP3
IIP3
(f=885+885.1M Hz , P in=-36dBm, VDD=VINV=2 .7V , V CTL1=2.7V, VCTL2=2.7V)
-22
-20
-18
-16
-14
-12
-10
-8
-50 0 50 100
P-1dB(IN) vs. Temperature
P-1 d B (IN ) (d B m)
Tem p erature (oC)
P-1dB(IN)
(f=885M Hz, VDD=VINV=2 .7V , VCTL1=2.7V, VCTL2=2.7V)
0
0.5
1
1.5
2
2.5
3
3.5
4
-50 0 50 100
VSW R vs. Tem perature
VSWRi
VSWRo
VSWR i, V SWR o
Tem p erature (oC)
(f=885M Hz, VDD=VINV=2 .7V , VCTL1=2.7V, VCTL2=2.7V)
0
1
2
3
4
5
-50 0 50 100
IDD vs. Temperature
ID D (m A )
Tem p erature (oC)
IDD
(VDD=VINV=2.7V , VCTL1=2.7V, VCTL2=2.7V, PRF=OFF)
NJG1119PB4
-
16
-
QELECTRICAL CHARACTERISTIC S 1 1(800MHz ba nd High Gain Mode)
NJG1119PB4
-
17
-
QELECTRICAL CHARACTERISTIC S 12(800MHz band High Gain Mode)
0
5
10
15
20
0 5 10 15 20
k factor vs. frequency
k factor
frequency (GHz)
(VDD=VINV=2 .7V, VCTL1=2.7V, VCTL2=2.7V)
NJG1119PB4
-
18
-
QELECTRICAL CHARACTERISTIC S 13(800MHz band Low Gain Mode)
-50
-40
-30
-20
-10
0
10
-40-30-20-10 0 10 20
Pout vs. Pin
Pout (dBm)
Pin (dBm)
P-1dB(IN)=+9.5dBm
Pout
(f=885M H z, VDD=VINV= 2 .7 V, VCTL1= 2.7V , VCTL2=0V)
-12
-10
-8
-6
-4
-2
0
-40-30-20-10 0 10 20
G ain v s . Pi n
Gain (dB)
Pin (dBm)
P-1dB(IN)=+9.5dBm
Gain
(f=885M H z, VDD=VINV= 2 .7 V, VCTL1= 2.7V , VCTL2=0V)(f=885M H z, VDD=VINV= 2 .7 V, VCTL1= 2.7V , VCTL2=0V)
0
1
2
3
4
5
6
7
8
0.75 0.8 0.85 0.9 0.95 1
N F v s . fre q u en c y
Noise Figure (dB)
frequency (GHz)
NF
(VDD=VINV=2.7V , VCTL1=2.7V, VCTL2=0V)
-100
-80
-60
-40
-20
0
20
-40 -30 -20 -10 0 10
P o ut, IM 3 v s . Pin
Pou t, IM3 (dBm )
Pin (dBm)
IIP3=+2.2dBm
Pout
IM3
(f=885M H z, VDD=VINV= 2 .7 V, VCTL1= 2.7V , VCTL2=0V)
-12
-10
-8
-6
-4
-2
0
2
-2
0
2
4
6
8
10
12
0.85 0.86 0.87 0.88 0.89 0.9 0.91 0.92
O IP3, IIP3 vs . fre q uen c y
OIP3 (dBm)
IIP 3 (d B m)
frequency (GHz)
OIP3
IIP3
(df=100kHz, Pin=-20dBm, VDD=VINV=2.7V, VCTL1=2.7V, VCTL2=0V)
4
6
8
10
12
14
16
0.85 0.86 0.87 0.88 0.89 0.9 0.91 0.92
P-1dB (IN) vs. frequen cy
P-1dB(IN) (dBm)
frequency (GHz)
P-1dB(IN)
(VDD=VINV=2.7V , VCTL1=2.7V, VCTL2=0V)
NJG1119PB4
-
19
-
QELECTRICAL CHARACTERISTIC S 14(800MHz band Low Gain Mode)
-11
-10
-9
-8
-7
-6
-5
-4
-3
3
4
5
6
7
8
9
10
11
-50 0 50 100
Gain , NF v s. Temperature
G a in (d B )
NF (dB)
Temperature (oC)
Gain
NF
(f= 88 5 MH z , VDD=VINV=2 .7V , VCTL1=2.7V, VCTL2=0V)
-25
-20
-15
-10
-5
0
5
10
-10
-5
0
5
10
15
20
25
-50 0 50 100
OIP3 , IIP3 v s . Tempera tu r e
OIP3 (dBm)
IIP 3 ( d Bm)
Temperature (oC)
OIP3
IIP3
(f=885+885.1MH z, Pin=-20dBm , VDD=VINV=2 .7V , VCTL1=2.7V, VCTL2=0V)
2
4
6
8
10
12
14
16
-50 0 50 100
P-1dB(IN) vs. Temperature
P-1dB(IN) (dBm)
Tem p erature (oC)
P-1dB(IN)
(f=8 8 5 MH z , VDD=VINV=2 .7V , VCTL1=2.7V, VCTL2=0V)
0
0.5
1
1.5
2
2.5
3
3.5
4
-50 0 50 100
V SW R vs . Temp e ratur e
VSWRi
VSWRo
VS WR i, V S WRo
Temperature (oC)
(f=88 5MH z , VDD=VINV=2.7V, VCTL1=2.7V, VCTL2=0V)
0
5
10
15
20
25
30
-50 0 50 100
IDD vs. Temperature
ID D ( u A )
Temperature (oC)
IDD
(VDD=VINV=2.7V, VCTL1=2.7V, VCTL2=0V, PRF=OFF)
NJG1119PB4
-
20
-
QELECTRICAL CHARACTERISTIC S 15(800MHz band Low Gain Mode)
NJG1119PB4
-
21
-
QELECTRICAL CHARACTERISTIC S 16(800MHz band Low Gain Mode)
0
5
10
15
20
0 5 10 15 20
k factor vs. frequency
k factor
frequency (GHz)
(VDD=VINV=2.7V , VCTL1=2.7V, VCTL2=0V)
NJG1119PB4
-
22
-
RF IN1
(800MHz)
RF IN2
(2.1GHz)
RF OUT1
(800MHz)
RF OUT2
(2.1GHz)
VCTL2=0V or 2.7V
(RX A TT)
VINV=2.7V
VDD=2.7V
VCTL1=0V or 2.7V
(Band Select)
4
5
6
789
10
11
12
123
RFIN2
RFIN1
GND
RFOUT1
RFOUT2
GND
GND
GNDVINV
VCTL2
VCTL1
EXTCAP
Logic Circuit
2. 1GHz B and
800M Hz Band
QTEST CIRCUIT
PARTS LIST
*: Please use an appropriate indu ctor for L2, L6, L8 to improve Noise Figure.
QTRUTH TABLE “H”=VCTL(H), “L”=VCTL(L)
Parts ID Comment
L1, L3~L5, L7 TAIYO-YUDEN (HK1005)
L2, L6, L8 MURA TA (LQW15A)
C1~C4 MURATA (GRP15)
Control voltage 800MHz band 2.1GHz band
VCTL1
Band select VCTL2
RX A TT LNA IDD Bypass circuit LNA IDD Bypass circuit
L L OFF ON OFF ON
L H OFF OFF ON OFF
H L OFF ON OFF ON
H H ON OFF OFF OFF
(Top View)
L1
10nH
L2
18nH
L3
18nH
L4
33nH
L7
1.8nH
L8
6.2nH
C1
6pF
C2
1000pF
C3
20pF
C4
1000pF
1 Pin INDEX
L
5
2.7nH
L
6
4.3nH
NJG1119PB4
-
23
-
QRECOMMENDED DESIGN
PCB (FR-4): t=0.2m
MICROSTRIP LINE WIDTH=0.4mm (Z0=50Ω)
PCB SIZE=17.0mmx17.0mm
VDD
VINV
VCTL1
VCTL2
RF IN1
(800MHz)
RF OUT1
(800MHz)
RF IN2
(2.1GHz)
RF OUT2
(2.1GHz)
L1 L2
L3
L4
L5
L6
L7
L8
C1
C3
C4
(Top V iew)
C2
NJG1119PB4
-
24
-
QP ACKAGE OUTLINE (FFP12-B4)
Cautions on using this product
This product contains Gallium-Arsenide (GaAs) which is a h armful material.
• Do NOT eat or put into mouth.
• Do NOT dispose in f ire or break up this product.
• Do NOT chemically make gas or powder with this p roduct.
• T
o
waste this
p
roduct,
p
lease obe
y
the relatin
g
law of
y
ou
r
countr
y
.
This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care t
o
avoid these dama
g
es.
[CAUTION]
The specific ations on this dat abook are only
given for information , without any guarantee
as regards either mistakes or omissions. The
application circuits in this databook are
described only to show representativ e usages
of the product and not intended for the
guarant ee or permission of any right including
the industr ial rights.
0.75±0.15
0.103
0.303
0.50
0.365 0.27
2.0±0.1
0.30
0.20
2pin INDEX
1pin INDEX
0.17
0.125
0.25
(TOP VIEW)
(BOTTOM VIEW)
(SIDE VIEW)
12pin
1pin
2.0±0.1
0.35
UNIT : mm
PCB : Ceramic
OVER COAT : Epoxy resin
TERMINAL TREA T : Au
WEIGHT : 10mg
