Agilent ATF-531P8 High Linearity
Enhancement Mode[1]
Pseudomorphic HEMT in
2x2 mm2 LPCC[3] Package
Data Sheet
Description
Agilent Technologies’s
ATF-531P8 is a single-voltage
high linearity, low noise
E-pHEMT housed in an 8-lead
JEDEC-standard leadless
plastic chip carrier (LPCC[3])
package. The device is ideal as
a high linearity, low-noise,
medium-power amplifier. Its
operating frequency range is
from 50 MHz to 6 GHz.
The thermally efficient package
measures only 2 mm x 2 mm x
0.75 mm. Its backside
metalization provides excellent
thermal dissipation as well as
visual evidence of solder reflow.
The device has a Point MTTF of
over 300 years at a mounting
temperature of +85°C. All
devices are 100% RF & DC tested.
Features
•Single voltage operation
•High linearity and gain
•Low noise figure
•Excellent uniformity in product
specifications
•Small package size:
2.0 x 2.0 x 0.75 mm
•Point MTTF > 300 years[2]
•MSL-1 and lead-free
•Tape-and-reel packaging option
available
Specifications
2 GHz; 4V, 135 mA (Typ.)
•38 dBm output IP3
•0.6 dB noise figure
•20 dB gain
•10.7 dB LFOM[4]
•24.5 dBm output power at 1 dB gain
compression
Applications
•Front-end LNA Q1 and Q2 driver or
pre-driver amplifier for Cellular/
PCS and WCDMA wireless
infrastructure
•Driver amplifier for WLAN,
WLL/RLL and MMDS applications
•General purpose discrete E-pHEMT
for other high linearity applications
Pin Connections and
Package Marking
Note:
Package marking provides orientation and
identification:
“3P” = Device Code
“x” = Date code indicates the month of
manufacture.
Note:
1. Enhancement mode technology employs a
single positive Vgs, eliminating the need of
negative gate voltage associated with
conventional depletion mode devices.
2. Refer to reliability datasheet for detailed
MTTF data.
3. Conforms to JEDEC reference outline MO229
for DRP-N
4. Linearity Figure of Merit (LFOM) is essentially
OIP3 divided by DC bias power.
Pin 1 (Source)
Pin 2 (Gate)
Pin 3
Pin 4 (Source)
Pin 8
Pin 7 (Drain)
Pin 6
Pin 5
3Px
Top View
Pin 8
Source
(Thermal/RF Gnd)
Pin 7 (Drain)
Pin 6
Pin 5
Pin 1 (Source)
Pin 2 (Gate)
Pin 3
Pin 4 (Source)
Bottom View
2
ATF-531P8 Absolute Maximum Ratings[1]
Absolute
Symbol Parameter Units Maximum
VDS Drain–Source Voltage[2] V7
VGS Gate–Source Voltage[2] V -5 to 1
VGD Gate Drain Voltage[2] V -5 to 1
IDS Drain Current[2] mA 300
IGS Gate Current mA 20
Pdiss Total Power Dissipation[3] W1
Pin max. RF Input Power dBm +24
TCH Channel Temperature °C 150
TSTG Storage Temperature °C -65 to 150
θch_b Thermal Resistance[4] °C/W 63
Notes:
1. Operation of this device in excess of any one
of these parameters may cause permanent
damage.
2. Assumes DC quiescent conditions.
3. Board (package belly) temperatureTB is 25°C.
Derate 16 mW/°C for TB > 87°C.
4. Thermal resistance measured using
150°C Liquid Crystal Measurement method.
5. Device can safely handle +24 dBm RF Input
Power provided IGS is limited to 20mA. IGS
at P1dB drive level is bias circuit dependent.
Product Consistency Distribution Charts at 2 GHz, 4V, 135 mA[5,6]
NF (dB)
Figure 2. NF
Nominal = 0.6, USL = 1.0.
0 0.6
0.3 0.9 1.2
180
150
120
90
60
30
0
Cpk = 1.0
Stdev = 0.14
+3 Std
-3 Std
OIP3 (dBm)
Figure 3. OIP3
LSL = 35.5, Nominal = 38.1.
35 38
36 37 40
39 41
160
120
80
40
0
Cpk = 1.2
Stdev = 0.71
+3 Std
-3 Std
GAIN (dB)
Figure 4. Small Signal Gain
LSL = 18.5, Nominal = 20.2 dB, USL = 21.5.
18.5 19.5 20.5 21.5
300
250
200
150
100
50
0
Cpk = 2.0
Stdev = 0.21
+3 Std
-3 Std
Notes:
5. Distribution data sample size is 500 samples taken from 5 different wafers and 3 different lots.
Future wafers allocated to this product may have nominal values anywhere between the upper and
lower limits.
6. Measurements are made on production test board, which represents a trade-off between optimal
OIP3, NF and VSWR. Circuit losses have been de-embedded from actual measurements.
Figure 1. Typical I-V Curves
(Vgs = 0.1 per step).
V
DS
(V)
400
300
200
100
0
02 456731
I
DS
(mA)
0.9 V
0.8 V
0.7 V
0.5 V
0.6 V
P1dB (dBm)
Figure 5. P1dB
Nominal = 24.6.
24.2 24.8
24.4 24.6 25 25.2
240
200
160
120
80
40
0
Stdev = 0.12
+3 Std
-3 Std
3
ATF-531P8 Electrical Specifications
TA = 25°C, DC bias for RF parameters is Vds = 4V and Ids = 135 mA unless otherwise specified.
Symbol Parameter and Test Condition Units Min. Typ. Max.
Vgs Operational Gate Voltage Vds = 4V, Ids = 135 mA V —0.68 —
Vth Threshold Voltage Vds = 4V, Ids = 8 mA V —0.3 —
Idss Saturated Drain Current Vds = 4V, Vgs = 0V µA—3.7 —
Gm Transconductance Vds = 4.5V, Gm = ∆Idss/∆Vgs; mmho —650 —
?Vgs = Vgs1 - Vgs2
Vgs1 = 0.6V, Vgs2 = 0.55V
Igss Gate Leakage Current Vds = 0V, Vgs = -4V µA -10 -0.34 —
NF Noise Figure[1] f = 2 GHz dB —0.6 1
f = 900 MHz dB —0.6 —
G Gain[1] f = 2 GHz dB 18.5 20 21.5
f = 900 MHz dB —25 —
OIP3 Output 3rd Order f = 2 GHz dBm 35.5 38 —
Intercept Point[1,2] f = 900 MHz dBm —37 —
P1dB Output 1dB f = 2 GHz dBm —24.5 —
Compressed[1] f = 900 MHz dBm —23 —
PAE Power Added Efficiency f = 2 GHz % —57 —
f = 900 MHz % —45 —
ACLR Adjacent Channel Leakage Offset BW = 5 MHz dBc —-68 —
Power Ratio[1,3] Offset BW = 10 MHz dBc —-64 —
Notes:
1. Measurements obtained using production test board described in Figure 6.
2. F1 = 2.00 GHz, F2 = 2.01 GHz and Pin = -10 dBm per tone.
3. ACLR test spec is based on 3GPP TS 25.141 V5.3.1 (2002-06)
– Test Model 1
– Active Channels: PCCPCH + SCH + CPICH + PICH + SCCPCH + 64 DPCH (SF=128)
– Freq = 2140 MHz
– Pin = -5 dBm
– Chan Integ Bw = 3.84 MHz
Input
50 Ohm
Transmission
Line Including
Gate Bias T
(0.3 dB loss)
Input
Matching Circuit
Γ_mag = 0.66
Γ_ang = -165°
(1.8 dB loss)
Output
Matching Circuit
Γ_mag = 0.09
Γ_ang = 118°
(1.1 dB loss)
DUT
50 Ohm
Transmission
Line and
Drain Bias T
(0.3 dB loss)
Output
Figure 6. Block diagram of the 2 GHz production test board used for NF, Gain, OIP3 , P1dB and PAE and ACLR measurements. This circuit achieves a
trade-off between optimal OIP3, NF and VSWR. Circuit losses have been de-embedded from actual measurements.
4
Gamma Load and Source at Optimum OIP3 Tuning Conditions
The device’s optimum OIP3 measurements were determined using a Maury load pull system at 4V, 135 mA
quiesent bias. The gamma load and source over frequency are shown in the table below:
Figure 7. Simplified schematic of production test board. Primary purpose is to show 15 Ohm series resistor placement in
gate supply. Transmission line tapers, tee intersections, bias lines and parasitic values are not shown.
RF Input
3.3 pF
4.7 pF
RF Outpu
t
50 Ohm
.02 λ
110 Ohm
.03 λ
110 Ohm
.03 λ
50 Ohm
.02 λ
DUT
2.2 pF
22 nH
15 Ohm
100 pF
Gate
DC Supply
12 nH
2.2 µF
Drain
DC Supply
Freq Gamma Source Gamma Load OIP3 Gain P1dB PAE
(GHz) Mag Ang Mag Ang (dBm) (dB) (dBm) (%)
0.9 0.616 -37.1 0.249 130.0 40.3 16.5 23.4 43.2
2.0 0.310 34.5 0.285 168.3 41.5 13.4 24.8 51.9
3.9 0.421 167.5 0.437 -161.6 41.5 10.5 24.7 42.8
5.8 0.402 -162.8 0.418 -134.1 41.0 7.9 24.7 36.6
5
ATF-531P8 Typical Performance Curves (at 25°C unless specified otherwise)
Tuned for Optimal OIP3
Note:
Bias current for the above charts are quiescent
conditions. Actual level may increase or
decrease depending on amount of RF drive. The
objective of load pull is to optimize OIP3 and
therefore may trade-off Small Signal Gain, P1dB
and VSWR.
Figure 8. OIP3 vs. I
ds
and V
ds
at 900 MHz.
3V
4V
5V
Ids (mA)
45
40
35
30
25
20
75 18010590 135 150 165120
OIP3 (dBm)
Figure 9. OIP3 vs. I
ds
and V
ds
at 2 GHz.
3V
4V
5V
Ids (mA)
45
40
35
30
25
20
75 18010590 135 150 165120
OIP3 (dBm)
Figure 10. OIP3 vs. I
ds
and V
ds
at 3.9 GHz.
3V
4V
5V
Ids (mA)
45
40
35
30
25
20
75 18010590 135 150 165120
OIP3 (dBm)
Figure 11. Small Signal Gain vs. I
ds
and V
ds
at 900 MHz.
3V
4V
5V
Ids (mA)
17
16
15
14
13
12
11
10
75 18010590 135 150 165120
GAIN (dB)
Figure 12. Small Signal Gain vs. I
ds
and V
ds
at 2 GHz.
3V
4V
5V
Ids (mA)
17
16
15
14
13
12
11
10
75 18010590 135 150 165120
GAIN (dB)
Figure 13. Small Signal Gain vs. I
ds
and V
ds
at 3.9 GHz.
3V
4V
5V
Ids (mA)
12
10
8
6
4
2
0
75 18010590 135 150 165120
GAIN (dB)
Figure 14. P1dB vs. I
dq
and V
ds
at 900 MHz.
3V
4V
5V
Idq (mA)
30
25
20
15
10
75 18010590 135 150 165120
P1dB (dBM)
Figure 15. P1dB vs. I
dq
and V
ds
at 2 GHz.
3V
4V
5V
Idq (mA)
30
25
20
15
10
75 18010590 135 150 165120
P1dB (dBM)
Figure 16. P1dB vs. I
dq
and V
ds
at 3.9 GHz.
3V
4V
5V
Idq (mA)
30
25
20
15
10
75 18010590 135 150 165120
P1dB (dBM)
6
ATF-531P8 Typical Performance Curves, continued (at 25°C unless specified otherwise)
Tuned for Optimal OIP3
Note:
Bias current for the above charts are quiescent
conditions. Actual level may increase or
decrease depending on amount of RF drive. The
objective of load pull is to optimize OIP3 and
therefore may trade-off Small Signal Gain, P1dB
and VSWR.
Figure 17. PAE vs. I
dq
and V
ds
at 900 MHz.
3V
4V
5V
I
dq
(mA)
60
50
40
30
20
10
0
75 18010590 135 150 165120
PAE (%)
Figure 18. PAE vs. I
dq
and V
ds
at 2 GHz.
3V
4V
5V
I
dq
(mA)
60
50
40
30
20
10
0
75 18010590 135 150 165120
PAE (%)
Figure 19. PAE vs. I
dq
and V
ds
at 3.9 GHz.
3V
4V
5V
I
dq
(mA)
60
50
40
30
20
10
0
75 18010590 135 150 165120
PAE (%)
Figure 20. OIP3 vs. I
ds
and V
ds
at 5.8 GHz.
3V
4V
5V
I
ds
(mA)
45
40
35
30
25
20
75 18010590 135 150 165120
OIP3 (dBm)
Figure 21. Small Signal Gain vs. I
ds
and V
ds
at 5.8 GHz.
3V
4V
5V
I
ds
(mA)
12
10
8
6
4
2
0
75 18010590 135 150 165120
SMALL SIGNAL GAIN (dB)
Figure 22. P1dB vs. I
dq
and V
ds
at 5.8 GHz.
3V
4V
5V
I
dq
(mA)
30
25
20
15
1075 18010590 135 150 165120
P1dB (dBm)
Figure 23. PAE vs. I
dq
and V
ds
at 5.8 GHz.
3V
4V
5V
I
dq
(mA)
60
50
40
30
20
10
0
75 18010590 135 150 165120
PAE (%)
7
ATF-531P8 Typical Performance Curves (at 25°C unless specified otherwise)
Tuned for Optimal OIP3, continued
Figure 24. OIP3 vs. Temp and Freq.
(Tuned for optimal OIP3 at 4V, 135 mA)
-40°C
25°C
85°C
FREQUENCY (GHz)
45
40
35
30
25
20
0.5 2.51.5 3.5 4.5 5.5
OIP3 (dBm)
Figure 25. Small Signal Gain vs. Temp and
Freq. (Tuned for optimal OIP3 at 4V, 135 mA)
FREQUENCY (GHz)
20
15
10
5
0
0.5 2.51.5 3.5 4.5 5.5
GAIN (dB)
Figure 26. P1dB vs. Temp and Freq.
(Tuned for optimal OIP3 at 4V, 135 mA)
FREQUENCY (GHz)
30
25
20
15
10
0.5 2.51.5 3.5 4.5 5.5
P1dB (dBm)
Figure 27. PAE vs. Temp and Freq.
(Tuned for optimal OIP3 at 4V, 135 mA)
FREQUENCY (GHz)
80
70
60
50
40
30
20
10
0
0.5 2.51.5 3.5 4.5 5.5
PAE (%)
-40°C
25°C
85°C
-40°C
25°C
85°C
-40°C
25°C
85°C
Note:
Bias current for the above charts are quiescent
conditions. Actual level may increase or
decrease depending on amount of RF drive. The
objective of load pull is to optimize OIP3 and
therefore may trade-off Small Signal Gain, P1dB
and VSWR.
8
Freq Fmin Γopt Γopt Rn/50 Ga
GHz dB Mag. Ang. dB
0.5 0.50 0.20 166.00 0.041 28.26
0.9 0.59 0.25 169.00 0.044 24.27
1 0.60 0.35 171.00 0.036 24.15
1.5 0.72 0.40 173.00 0.039 21.14
2 0.81 0.57 -173.50 0.029 20.07
2.4 0.90 0.61 -167.70 0.033 18.73
3 1.01 0.63 -163.50 0.041 16.91
3.5 1.10 0.67 -158.20 0.054 15.86
3.9 1.13 0.70 -153.90 0.068 15.12
5 1.34 0.72 -142.70 0.139 13.08
5.8 1.48 0.75 -135.40 0.229 12.04
6 1.58 0.76 -133.30 0.278 11.82
7 1.68 0.80 -125.00 0.470 10.69
8 1.89 0.84 -116.10 0.860 9.97
9 2.15 0.82 -106.90 1.170 8.96
10 2.34 0.85 -95.10 2.010 8.09
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of
16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate
lead. The output reference plane is at the end of the drain lead.
Typical Noise Parameters at 25°C, VDS = 4V, IDS = 180 mA
Figure 28. MSG/MAG & |S21|
2
(dB)
@ 4V, 180 mA.
FREQUENCY (GHz)
40
30
20
10
0
-10
0 5 10 15 20
S21
MAG
MSG
MSG/MAG & |S21|
2
(dB)
ATF-531P8 Typical Scattering Parameters at 25°C, VDS = 4V, IDS = 180 mA
Freq. S11 S21 S12 S22
MSG/MAG
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang. dB
0.1 0.626 -59.4 33.20 45.702 154.5 -40.00 0.010 62.6 0.410 -44.4 36.60
0.2 0.704 -97.4 31.41 37.192 135.8 -35.92 0.016 48.8 0.384 -79.2 33.66
0.3 0.761 -119.4 29.53 29.950 123.5 -34.42 0.019 39.1 0.370 -101.8 31.98
0.4 0.794 -133.8 27.78 24.477 114.8 -33.56 0.021 33.7 0.360 -117.6 30.67
0.5 0.815 -142.5 26.32 20.693 108.9 -32.77 0.023 30.0 0.355 -127.1 29.54
0.6 0.824 -149.6 24.99 17.760 103.9 -32.77 0.023 27.4 0.351 -135.5 28.88
0.7 0.834 -155.1 23.82 15.516 99.9 -32.40 0.024 25.8 0.349 -141.9 28.11
0.8 0.840 -159.7 22.76 13.742 96.6 -32.40 0.024 24.6 0.349 -146.9 27.58
0.9 0.845 -163.3 21.83 12.346 93.6 -32.04 0.025 24.2 0.349 -151.1 26.94
1 0.848 -166.4 20.96 11.164 91.0 -32.04 0.025 23.8 0.347 -154.3 26.50
1.5 0.854 -177.7 17.59 7.579 80.6 -31.37 0.027 23.5 0.344 -165.8 24.48
1.9 0.857 175.9 15.60 6.024 73.9 -30.75 0.029 24.4 0.344 -171.2 23.17
2 0.853 174.4 15.36 5.863 72.6 -30.46 0.030 24.9 0.335 -171.8 22.91
2.4 0.853 168.9 13.79 4.894 66.5 -29.90 0.032 25.8 0.339 -176.8 21.85
3 0.855 161.6 11.83 3.902 57.9 -29.12 0.035 26.6 0.337 177.0 19.60
4 0.858 150.8 9.27 2.906 44.6 -27.74 0.041 26.5 0.356 168.5 16.23
5 0.864 140.7 7.20 2.292 31.6 -26.56 0.047 24.3 0.378 160.6 14.19
6 0.871 131.7 5.48 1.879 19.4 -25.35 0.054 21.2 0.402 152.4 12.69
7 0.869 123.5 4.04 1.593 7.5 -24.29 0.061 17.4 0.427 144.6 11.18
8 0.880 115.2 2.73 1.370 -4.3 -23.35 0.068 12.6 0.449 136.1 10.39
9 0.883 106.8 1.77 1.226 -16.1 -22.27 0.077 7.0 0.465 127.4 9.70
10 0.884 95.7 0.70 1.084 -29.0 -21.41 0.085 -0.8 0.489 116.6 8.70
11 0.874 85.1 -0.34 0.962 -41.6 -20.63 0.093 -8.8 0.505 106.0 7.20
12 0.874 74.1 -1.39 0.852 -52.8 -19.91 0.101 -16.6 0.544 97.2 6.30
13 0.877 63.3 -2.52 0.748 -64.5 -19.49 0.106 -24.6 0.596 85.9 5.46
14 0.884 57.9 -3.64 0.658 -74.6 -19.02 0.112 -31.9 0.638 74.7 4.95
15 0.894 46.8 -4.81 0.575 -85.4 -18.71 0.116 -39.8 0.662 65.9 4.29
16 0.896 43.3 -5.66 0.521 -93.6 -18.49 0.119 -47.8 0.699 56.1 4.06
17 0.898 31.9 -7.25 0.434 -102.6 -18.49 0.119 -55.1 0.748 47.7 2.82
18 0.918 20.8 -8.61 0.371 -110.5 -18.94 0.113 -62.6 0.718 39.3 1.75
9
Freq Fmin Γopt Γopt Rn/50 Ga
GHz dB Mag. Ang. dB
0.5 0.18 0.20 166.00 0.014 28.57
0.9 0.26 0.25 169.00 0.018 24.42
1 0.35 0.35 171.00 0.021 24.32
1.5 0.40 0.40 173.00 0.021 21.25
2 0.51 0.47 177.20 0.022 19.35
2.4 0.56 0.51 -174.50 0.022 17.66
3 0.60 0.56 -169.30 0.023 16.37
3.5 0.73 0.60 -162.90 0.030 15.09
3.9 0.83 0.66 -157.60 0.040 14.82
5 1.03 0.68 -145.50 0.085 12.76
5.8 1.15 0.72 -137.10 0.140 11.55
6 1.20 0.72 -135.20 0.160 11.31
7 1.34 0.78 -126.70 0.300 10.55
8 1.57 0.83 -117.00 0.630 9.81
9 1.78 0.82 -107.90 0.880 8.86
10 1.83 0.85 -95.70 1.460 8.17
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of
16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate
lead. The output reference plane is at the end of the drain lead.
Typical Noise Parameters, VDS = 4V, IDS = 135 mA
Figure 29. MSG/MAG & |S21|
2
(dB)
@ 4V, 135 mA.
FREQUENCY (GHz)
40
30
20
10
0
-10
0 5 10 15 20
MSG/MAG & |S21|
2
(dB)
S21
MAG
MSG
ATF-531P8 Typical Scattering Parameters, VDS = 4V, IDS = 135 mA
Freq. S11 S21 S12 S22
MSG/MAG
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang. dB
0.1 0.812 -56.4 34.07 50.547 151.8 -38.42 0.012 62.6 0.449 -49.1 36.25
0.2 0.820 -94.6 31.95 39.582 132.2 -34.89 0.018 45.8 0.425 -85.0 33.42
0.3 0.834 -117.3 29.87 31.147 120.2 -33.15 0.022 36.5 0.397 -108.1 31.51
0.4 0.842 -132.4 27.99 25.104 111.8 -32.40 0.024 30.5 0.385 -123.7 30.20
0.5 0.846 -141.4 26.46 21.036 106.3 -32.04 0.025 27.0 0.379 -132.5 29.25
0.6 0.849 -148.7 25.08 17.954 101.6 -31.70 0.026 24.8 0.375 -140.4 28.39
0.7 0.853 -154.4 23.88 15.628 97.9 -31.70 0.026 23.2 0.372 -146.4 27.79
0.8 0.853 -159.0 22.80 13.809 94.8 -31.37 0.027 22.4 0.372 -151.0 27.09
0.9 0.855 -162.7 21.85 12.376 92.0 -31.37 0.027 21.7 0.371 -154.9 26.61
1 0.857 -166.0 20.97 11.186 89.6 -31.37 0.027 21.2 0.369 -157.9 26.17
1.5 0.857 -177.3 17.58 7.568 79.7 -30.75 0.029 21.4 0.366 -168.7 24.17
1.9 0.857 176.2 15.57 6.007 73.3 -30.17 0.031 21.7 0.366 -174.2 22.87
2 0.853 174.7 15.34 5.847 72.0 -29.90 0.032 22.5 0.347 -174.8 22.62
2.4 0.852 169.2 13.77 4.879 66.0 -29.37 0.034 23.0 0.351 -179.7 21.57
3 0.853 161.7 11.80 3.889 57.6 -28.64 0.037 24.1 0.358 174.2 20.22
4 0.857 150.8 9.24 2.896 44.6 -27.54 0.042 23.9 0.375 165.7 16.28
5 0.861 140.9 7.18 2.285 31.8 -26.38 0.048 22.2 0.396 157.8 14.11
6 0.866 131.6 5.45 1.873 19.7 -25.19 0.055 18.6 0.417 149.6 12.50
7 0.867 123.5 4.02 1.589 7.9 -24.29 0.061 15.1 0.440 141.8 11.10
8 0.875 115.1 2.72 1.367 -3.8 -23.22 0.069 10.4 0.459 133.4 10.16
9 0.877 106.9 1.76 1.224 -15.3 -22.16 0.078 4.8 0.474 124.8 9.40
10 0.884 95.6 0.71 1.085 -28.2 -21.31 0.086 -2.6 0.496 114.1 8.69
11 0.889 85.3 -0.34 0.962 -41.0 -20.63 0.093 -10.7 0.511 103.7 7.93
12 0.872 73.9 -1.33 0.858 -51.7 -19.91 0.101 -18.3 0.548 95.1 6.24
13 0.878 63.6 -2.48 0.752 -64.0 -19.58 0.105 -26.2 0.600 84.0 5.55
14 0.886 57.6 -3.57 0.663 -73.7 -19.02 0.112 -33.3 0.640 73.1 5.05
15 0.902 47.2 -4.66 0.585 -84.8 -18.79 0.115 -42.0 0.663 64.4 4.93
16 0.902 43.7 -5.56 0.527 -91.3 -18.49 0.119 -49.2 0.698 54.7 4.37
17 0.895 32.1 -6.99 0.447 -101.9 -18.49 0.119 -56.7 0.746 46.5 2.93
18 0.932 20.6 -8.75 0.365 -109.6 -18.94 0.113 -63.9 0.716 38.2 2.36
10
Freq Fmin Γopt Γopt Rn/50 Ga
GHz dB Mag. Ang. dB
0.5 0.15 0.10 130.00 0.016 27.97
0.9 0.20 0.15 135.00 0.019 23.50
1 0.22 0.20 143.00 0.019 23.02
1.5 0.30 0.30 148.00 0.022 20.07
2 0.36 0.35 154.10 0.024 17.85
2.4 0.44 0.43 168.70 0.022 16.35
3 0.50 0.47 179.30 0.022 15.29
3.5 0.55 0.58 -170.80 0.019 14.11
3.9 0.63 0.60 -164.80 0.024 14.01
5 0.80 0.67 -150.90 0.050 11.92
5.8 0.90 0.72 -140.80 0.095 11.00
6 0.91 0.72 -139.50 0.100 10.56
7 1.14 0.71 -129.10 0.180 9.80
8 1.24 0.74 -119.90 0.285 9.31
9 1.49 0.74 -109.70 0.460 8.41
10 1.61 0.76 -97.30 0.720 7.73
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of
16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate
lead. The output reference plane is at the end of the drain lead.
Typical Noise Parameters, VDS = 4V, IDS = 75 mA
Figure 30. MSG/MAG & |S21|
2
(dB)
@ 4V, 75 mA.
FREQUENCY (GHz)
40
30
20
10
0
-10
0 5 10 15 20
MSG/MAG & |S21|
2
(dB)
S21
MAG
MSG
ATF-531P8 Typical Scattering Parameters, VDS = 4V, IDS = 75 mA
Freq. S11 S21 S12 S22
MSG/MAG
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang. dB
0.1 0.930 -51.3 33.70 48.399 152.3 -37.08 0.014 63.6 0.524 -45.7 35.39
0.2 0.889 -88.3 31.65 38.230 132.6 -32.77 0.023 46.8 0.467 -80.7 32.21
0.3 0.876 -111.6 29.58 30.121 120.6 -31.37 0.027 36.1 0.436 -103.2 30.48
0.4 0.867 -127.3 27.71 24.294 112.2 -30.75 0.029 29.5 0.415 -119.1 29.23
0.5 0.862 -137.0 26.18 20.379 106.6 -30.46 0.030 25.9 0.405 -128.4 28.32
0.6 0.858 -144.7 24.81 17.405 101.9 -30.17 0.031 23.1 0.397 -136.8 27.49
0.7 0.857 -151.0 23.62 15.165 98.2 -29.90 0.032 21.1 0.392 -143.2 26.76
0.8 0.856 -156.0 22.54 13.404 95.0 -29.90 0.032 19.9 0.390 -148.2 26.22
0.9 0.854 -160.0 21.59 12.005 92.2 -29.63 0.033 18.3 0.387 -152.3 25.61
1 0.857 -163.5 20.72 10.859 89.8 -29.63 0.033 18.2 0.384 -155.6 25.17
1.5 0.853 -175.7 17.33 7.351 79.8 -29.12 0.035 16.3 0.380 -167.2 23.22
1.9 0.853 177.6 15.33 5.839 73.3 -28.87 0.036 16.5 0.379 -173.2 22.10
2 0.848 176.2 15.09 5.681 72.0 -28.64 0.037 16.7 0.360 -173.8 21.86
2.4 0.846 170.3 13.52 4.742 66.0 -28.18 0.039 17.0 0.363 -179.0 20.85
3 0.848 162.4 11.55 3.780 57.5 -27.74 0.041 17.0 0.369 174.6 19.65
4 0.850 151.6 8.98 2.813 44.3 -26.94 0.045 16.7 0.385 165.7 16.29
5 0.853 141.4 6.93 2.220 31.5 -25.85 0.051 15.4 0.405 157.5 13.90
6 0.861 132.3 5.22 1.824 19.4 -25.04 0.056 12.9 0.426 149.2 12.31
7 0.861 123.8 3.78 1.546 7.5 -24.01 0.063 9.8 0.447 141.3 10.85
8 0.868 115.6 2.50 1.334 -4.3 -23.22 0.069 5.5 0.467 132.8 9.85
9 0.873 107.1 1.51 1.190 -15.9 -22.16 0.078 0.4 0.481 124.1 9.15
10 0.875 95.8 0.50 1.059 -28.8 -21.41 0.085 -6.6 0.501 113.3 8.19
11 0.881 85.6 -0.57 0.937 -41.2 -20.63 0.093 -13.8 0.515 102.9 7.40
12 0.871 74.2 -1.56 0.836 -52.5 -20.00 0.100 -21.4 0.553 94.5 6.12
13 0.873 63.7 -2.65 0.737 -63.9 -19.66 0.104 -28.8 0.604 83.4 5.28
14 0.885 57.0 -3.80 0.646 -74.0 -19.17 0.110 -36.3 0.644 72.5 4.89
15 0.891 47.0 -4.72 0.581 -85.2 -18.79 0.115 -43.7 0.666 63.7 4.38
16 0.912 43.7 -5.76 0.515 -93.5 -18.56 0.118 -51.7 0.700 54.2 5.43
17 0.895 32.2 -7.15 0.439 -102.3 -18.49 0.119 -58.5 0.748 46.0 2.90
18 0.933 21.2 -8.66 0.369 -110.5 -19.02 0.112 -65.8 0.718 37.8 2.74
11
Freq Fmin Γopt Γopt Rn/50 Ga
GHz dB Mag. Ang. dB
0.5 0.45 0.20 154.00 0.037 28.85
0.9 0.48 0.32 160.00 0.032 25.13
1 0.50 0.35 166.00 0.030 24.43
1.5 0.55 0.40 170.00 0.030 21.26
2 0.65 0.46 177.40 0.030 19.38
2.4 0.70 0.49 -175.10 0.032 17.90
3 0.77 0.55 -168.90 0.031 16.33
3.5 0.84 0.58 -162.60 0.037 15.23
3.9 0.90 0.62 -158.20 0.043 14.60
5 1.06 0.66 -145.80 0.085 12.66
5.8 1.20 0.69 -137.30 0.140 11.60
6 1.19 0.69 -135.40 0.150 11.38
7 1.40 0.77 -126.50 0.320 10.55
8 1.52 0.81 -117.90 0.550 9.84
9 1.75 0.82 -107.50 0.890 9.05
10 1.88 0.85 -95.60 1.530 8.29
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of
16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate
lead. The output reference plane is at the end of the drain lead.
Typical Noise Parameters, VDS = 5V, IDS = 135 mA
Figure 31. MSG/MAG & |S21|
2
(dB)
@ 5V, 135 mA.
FREQUENCY (GHz)
40
30
20
10
0
-10
0 5 10 15 20
MSG/MAG & |S21|
2
(dB)
S21
MAG
MSG
ATF-531P8 Typical Scattering Parameters, VDS = 5V, IDS = 135 mA
Freq. S11 S21 S12 S22
MSG/MAG
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang. dB
0.1 0.805 -56.0 34.11 50.734 152.1 -39.17 0.011 62.6 0.468 -45.2 36.64
0.2 0.815 -94.0 32.03 39.967 132.6 -34.89 0.018 46.6 0.419 -79.7 33.46
0.3 0.831 -116.9 29.97 31.517 120.5 -33.56 0.021 36.3 0.387 -102.0 31.76
0.4 0.839 -131.7 28.10 25.418 112.1 -32.77 0.023 30.7 0.364 -117.9 30.43
0.5 0.844 -140.9 26.58 21.322 106.4 -32.40 0.024 27.2 0.354 -127.0 29.49
0.6 0.846 -148.3 25.20 18.207 101.8 -32.04 0.025 24.9 0.346 -135.4 28.62
0.7 0.850 -154.0 24.00 15.852 98.0 -31.70 0.026 23.3 0.342 -141.6 27.85
0.8 0.852 -158.7 22.93 14.014 94.8 -31.70 0.026 22.3 0.339 -146.5 27.32
0.9 0.855 -162.5 21.98 12.559 92.0 -31.70 0.026 21.6 0.337 -150.5 26.84
1 0.854 -165.6 21.10 11.351 89.6 -31.37 0.027 20.9 0.335 -153.9 26.24
1.5 0.855 -177.1 17.71 7.681 79.5 -31.06 0.028 21.1 0.331 -165.0 24.38
1.9 0.857 176.3 15.71 6.099 73.0 -30.46 0.030 22.3 0.331 -170.4 23.08
2 0.851 174.9 15.46 5.931 71.7 -30.17 0.031 22.3 0.336 -170.9 22.82
2.4 0.851 169.4 13.89 4.946 65.6 -29.63 0.033 23.3 0.315 -175.8 21.76
3 0.852 161.8 11.92 3.943 57.1 -29.12 0.035 24.3 0.323 178.2 19.82
4 0.857 151.1 9.35 2.935 43.9 -27.74 0.041 24.4 0.343 169.9 16.43
5 0.859 141.0 7.30 2.318 30.9 -26.56 0.047 22.8 0.367 162.1 14.19
6 0.870 131.8 5.57 1.899 18.5 -25.51 0.053 19.7 0.391 154.0 12.82
7 0.867 123.6 4.11 1.605 6.5 -24.44 0.060 16.3 0.417 146.2 11.24
8 0.877 115.6 2.80 1.381 -5.2 -23.48 0.067 11.8 0.440 137.7 10.41
9 0.881 106.7 1.82 1.233 -17.0 -22.38 0.076 6.1 0.458 129.1 9.75
10 0.885 95.6 0.75 1.090 -30.1 -21.41 0.085 -1.3 0.482 118.1 8.94
11 0.892 85.2 -0.30 0.966 -42.9 -20.72 0.092 -9.1 0.500 107.5 8.31
12 0.875 74.2 -1.33 0.858 -54.3 -20.00 0.100 -17.0 0.540 98.6 6.52
13 0.883 63.8 -2.49 0.751 -65.9 -19.66 0.104 -24.8 0.593 87.1 5.87
14 0.886 57.9 -3.58 0.662 -76.4 -19.09 0.111 -31.8 0.636 75.8 5.23
15 0.913 47.4 -4.78 0.577 -86.8 -18.71 0.116 -40.3 0.660 66.8 6.01
16 0.908 43.1 -5.81 0.512 -94.4 -18.56 0.118 -47.8 0.699 57.0 4.78
17 0.891 32.2 -6.99 0.447 -105.1 -18.49 0.119 -54.9 0.747 48.4 2.98
18 0.928 20.6 -8.64 0.370 -112.1 -18.86 0.114 -62.6 0.717 39.9 2.41
12
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of
16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate
lead. The output reference plane is at the end of the drain lead.
ATF-531P8 Typical Scattering Parameters, VDS = 3V, IDS = 135 mA
Freq. S11 S21 S12 S22
MSG/MAG
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang. dB
0.1 0.823 -57.1 33.96 49.888 151.3 -37.72 0.013 62.6 0.427 -55.1 35.84
0.2 0.826 -95.6 31.82 38.989 131.6 -33.98 0.020 45.7 0.418 -92.8 32.90
0.3 0.842 -118.2 29.66 30.415 119.6 -32.77 0.023 36.0 0.421 -115.9 31.21
0.4 0.846 -133.1 27.75 24.416 111.4 -32.04 0.025 30.1 0.420 -130.7 29.90
0.5 0.851 -142.0 26.21 20.452 105.9 -31.70 0.026 26.8 0.419 -139.0 28.96
0.6 0.850 -149.2 24.83 17.443 101.4 -31.37 0.027 24.4 0.419 -146.4 28.10
0.7 0.855 -154.9 23.62 15.178 97.7 -31.37 0.027 22.9 0.419 -151.9 27.50
0.8 0.856 -159.5 22.55 13.405 94.7 -31.06 0.028 22.1 0.420 -156.1 26.80
0.9 0.859 -163.2 21.59 12.012 92.0 -31.06 0.028 21.4 0.421 -159.7 26.32
1 0.857 -166.3 20.71 10.853 89.6 -30.75 0.029 21.1 0.419 -162.6 25.73
1.5 0.857 -177.7 17.32 7.342 79.9 -30.46 0.030 21.0 0.418 -172.9 23.89
1.9 0.858 175.8 15.31 5.828 73.6 -29.90 0.032 21.6 0.418 -178.2 22.60
2 0.855 174.4 15.08 5.676 72.3 -29.37 0.034 22.1 0.410 -179.1 22.23
2.4 0.855 168.8 13.51 4.738 66.4 -29.12 0.035 22.6 0.403 176.0 21.32
3 0.854 161.4 11.54 3.774 58.2 -28.40 0.038 22.8 0.409 169.8 19.97
4 0.858 150.7 8.98 2.812 45.3 -27.13 0.044 22.7 0.423 161.0 16.15
5 0.860 140.4 6.92 2.219 32.8 -26.02 0.050 20.7 0.440 152.8 13.82
6 0.868 131.4 5.21 1.821 21.0 -24.88 0.057 17.2 0.457 144.4 12.31
7 0.866 123.2 3.79 1.547 9.4 -23.88 0.064 13.4 0.475 136.6 10.81
8 0.877 114.8 2.52 1.337 -2.0 -22.85 0.072 8.5 0.490 128.0 10.00
9 0.876 106.3 1.57 1.198 -13.7 -21.83 0.081 2.6 0.502 119.3 9.09
10 0.880 95.1 0.56 1.066 -26.0 -21.11 0.088 -5.0 0.519 108.7 8.20
11 0.883 84.7 -0.46 0.948 -38.2 -20.35 0.096 -12.9 0.530 98.4 7.31
12 0.874 73.6 -1.51 0.840 -49.6 -19.83 0.102 -20.7 0.566 90.7 6.06
13 0.878 62.9 -2.56 0.745 -61.1 -19.41 0.107 -28.5 0.613 79.7 5.32
14 0.884 56.9 -3.54 0.665 -71.0 -18.94 0.113 -35.9 0.652 69.3 4.87
15 0.906 46.7 -4.70 0.582 -80.8 -18.71 0.116 -43.9 0.670 60.8 4.76
16 0.907 42.9 -5.61 0.524 -88.0 -18.49 0.119 -51.4 0.704 51.6 4.29
17 0.893 32.2 -6.80 0.457 -99.8 -18.42 0.120 -58.7 0.747 43.7 2.90
18 0.925 20.7 -8.38 0.381 -107.2 -18.86 0.114 -66.3 0.717 35.8 2.20
Freq Fmin Γopt Γopt Rn/50 Ga
GHz dB Mag. Ang. dB
0.5 0.25 0.20 166.00 0.020 28.47
0.9 0.30 0.25 169.00 0.022 24.36
1 0.30 0.35 171.00 0.018 24.24
1.5 0.36 0.40 173.00 0.019 21.17
2 0.45 0.46 176.80 0.020 19.30
2.4 0.52 0.52 -174.70 0.021 18.08
3 0.66 0.56 -169.80 0.025 16.26
3.5 0.70 0.62 -162.80 0.028 15.33
3.9 0.87 0.65 -157.90 0.042 14.62
5 1.02 0.67 -145.70 0.082 12.52
5.8 1.13 0.71 -136.80 0.140 11.53
6 1.24 0.73 -135.10 0.175 11.40
7 1.34 0.82 -126.20 0.380 10.57
8 1.58 0.83 -116.90 0.645 9.67
9 1.78 0.81 -107.50 0.870 8.59
10 1.88 0.83 -95.40 1.350 7.76
Typical Noise Parameters, VDS = 3V, IDS = 135 mA
Figure 32. MSG/MAG & |S21|
2
(dB)
@ 3V, 135 mA.
FREQUENCY (GHz)
40
30
20
10
0
-10
0 5 10 15 20
MSG/MAG & |S21|
2
(dB)
S21
MAG
MSG
13
2x 2 LPCC (JEDEC DFP-N) Package Dimensions
Ordering Information
Part Number No. of Devices Container
ATF-531P8-TR1 3000 7” Reel
ATF-531P8-TR2 10000 13”Reel
ATF-531P8-BLK 100 antistatic bag
Device Models
Refer to Agilent’s Web Site
www.agilent.com/view/rf
D
E
8
7
6
5
A
D1
E1
P
e
pin1
R
Lb
DIMENSIONS ARE IN MILLIMETERS
DIMENSIONS
MIN.
0.70
0
0.225
1.9
0.65
1.9
1.45
0.20
0.35
NOM.
0.75
0.02
0.203 REF
0.25
2.0
0.80
2.0
1.6
0.50 BSC
0.25
0.40
MAX.
0.80
0.05
0.275
2.1
0.95
2.1
1.75
0.30
0.45
SYMBOL
A
A1
A2
b
D
D1
E
E1
e
P
L
1
pin1
2
3
4
3PX
Top View
End View
Side View
Bottom View
A2
AA1
14
Device Orientation
PCB Land Pattern and Stencil Design
2.80 (110.24)
0.70 (27.56)
0.25 (9.84)
0.25 (9.84)
0.50 (19.68)
0.28 (10.83)
0.60 (23.62)
φ0.20 (7.87)
PIN 1
Solder
mask
RF
transmission
line 0.80 (31.50)
0.15 (5.91)
0.55 (21.65)
1.60 (62.99)
+
2.72 (107.09)
0.63 (24.80)
0.22 (8.86)
0.32 (12.79)
0.50 (19.68)
0.25 (9.74)
0.63 (24.80)
Stencil Layout (top view)
PCB Land Pattern (top view)
0.72 (28.35)
PIN 1
1.54 (60.61)
USER
FEED
DIRECTION
COVER TAPE
CARRIER
TAPE
REEL
8 mm
4 mm
3PX3PX3PX3PX
15
Tape Dimensions
P
0
P
F
W
D
1
E
P
2
A
0
10° Max
t
1
K
0
DESCRIPTION SYMBOL SIZE (mm) SIZE (inches)
LENGTH
WIDTH
DEPTH
PITCH
BOTTOM HOLE DIAMETER
A0
B0
K0
P
D1
2.30 ± 0.05
2.30 ± 0.05
1.00 ± 0.05
4.00 ± 0.10
1.00 + 0.25
0.091 ± 0.004
0.091 ± 0.004
0.039 ± 0.002
0.157 ± 0.004
0.039 + 0.002
CAVITY
DIAMETER
PITCH
POSITION
D
P0
E
1.50 ± 0.10
4.00 ± 0.10
1.75 ± 0.10
0.060 ± 0.004
0.157 ± 0.004
0.069 ± 0.004
PERFORATION
WIDTH
THICKNESS
W
t1
8.00 + 0.30
0.254 ± 0.02
0.315 ± 0.012
8.00 – 0.10 0.315 ± 0.004
0.010 ± 0.0008
CARRIER TAPE
CAVITY TO PERFORATION
(WIDTH DIRECTION)
CAVITY TO PERFORATION
(LENGTH DIRECTION)
F
P2
3.50 ± 0.05
2.00 ± 0.05
0.138 ± 0.002
0.079 ± 0.002
DISTANCE
WIDTH
TAPE THICKNESS
C
Tt
5.4 ± 0.10
0.062 ± 0.001
0.205 ± 0.004
0.0025 ± 0.0004
COVER TAPE
D
++
T
t
10° Max
B
0
www.agilent.com/semiconductors
For product information and a complete list of
distributors, please go to our web site.
For technical assistance call:
Americas/Canada: +1 (800) 235-0312 or
(916) 788 6763
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Data subject to change.
Copyright © 2002 Agilent Technologies, Inc.
Obsoletes 5988-8407EN (12/02)
July 31, 2003
5988-9990EN
