1. Product profile
1.1 General description
10W plastic LDMOS po we r tra nsistor for base station applications at frequencies fr om
700 MHz to 2700 MHz.
[1] Test signal: 2-carrier W-CDMA; carrier spacing = 5 MHz; PAR = 8.4 dB at 0.01 % probability on CCDF;
RF performance at VDS = 28 V; IDq = 110 mA.
1.2 Features and benefits
High efficiency
Excellent ruggedness
Designed for broadband operation
Excellent thermal stability
High power gain
Integrated ESD protection
Compliant to Directive 2002/95/EC, rega rd in g Re stri ctio n of Hazard ou s Sub stances
(RoHS)
1.3 Applications
CDMA
W-CDMA
GSM EDGE
MC-GSM
LTE
WiMAX
BLP7G22-10
LDMOS driver transistor
Rev. 2 — 30 May 2013 Product data sheet
Table 1. Application performance (multiple frequencies)
Ty pical RF performance at Tcase =25
C; IDq = 110 mA; in a class-AB application circuit.
Test signal f IDq VDS PL(AV) GpDACPR5M
(MHz) (mA) (V) (W) (dB) (%) (dBc)
Pulsed CW 2700 110 28 2 14.5 26 -
1-carrier W-CDMA 748 110 28 0.7 27.5 13.5 43 [1]
748 110 28 2 27.5 25 40
2-carrier W-CDMA 2140 110 28 0.7 17.4 13 51
2140 110 28 2 17.4 25 40
BLP7G22-10 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 2 — 30 May 2013 2 of 16
NXP Semiconductors BLP7G22-10
LDMOS driver transistor
2. Pinning information
[1] To be used in single ended applications only.
3. Ordering information
4. Limiting values
Table 2. Pinning
Pin Description Simplified outline Graphic sym b ol [1]
1, 6, 7, 12 n.c.
2, 3, 4, 5 gate
8, 9, 10, 11 drain
exposed die-pad source
7UDQVSDUHQWWRSYLHZ
H[SRVHG
GLHSDG
DDD
Table 3. Ordering information
Type number Package
Name Description Version
BLP7G22-10 HVSON12 plastic thermal enhanced very thin small outline
package; no leads; 12 terminals; body 6 4 0.85 mm SOT1179-2
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage - 65 V
VGS gate-source voltage 0.5 +13 V
Tstg storage temperature 65 +150 C
Tjjunction temperature - 150 C
BLP7G22-10 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 2 — 30 May 2013 3 of 16
NXP Semiconductors BLP7G22-10
LDMOS driver transistor
5. Recommended operating conditions
See application not e AN11198 for more details.
6. Thermal characteristics
7. Characteristics
Fig 1. Recommended operating area; case temperature as a function of power
dissipation
DDD
3:
7FDVHFDVH
7FDVH
&&&
Table 5. Thermal characteristics
Symbol Parameter Conditions Typ Unit
Rth(j-c) thermal resistance from junction to case Tcase =70C; PL=2W 3.2 K/W
Table 6. DC characteristics
Tj = 25
C; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V(BR)DSS drain-source breakdown voltage VGS =0V; I
D=0.18mA 65 - - V
VGS(th) gate-source threshold voltage VDS =10 V; I
D=18mA 1.5 1.9 2.3 V
IDSS drain leakage current VGS =0V; V
DS =28V 1.4 - +1.4 A
IDSX drain cut-off current VGS =V
GS(th) + 3.75 V - 3.2 - A
IGSS gate leakage current VGS =11V; V
DS = 0 V - - 140 nA
gfs forward transcondu ctance VDS =10V; I
D= 18 mA - 160 - mS
RDS(on) drain-source on-state resistance VGS =V
GS(th) + 3.75 V;
VDS =10V; I
D= 630 mA - 1000 - m
BLP7G22-10 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 2 — 30 May 2013 4 of 16
NXP Semiconductors BLP7G22-10
LDMOS driver transistor
8. Application information
8.1 Frequency band 2110 MHz to 2170 MHz
8.1.1 Application circuit
Table 7. RF characteristics
Test signal: 1-tone pulsed; tp = 50
s;
= 10 %; f = 2140 MHz; RF performance at VDS =28V;
IDq =110 mA; T
case =25
C; unless otherwise specified, in a production circui t .
Symbol Parameter Conditions Min Typ Max Unit
Gppower gain PL(AV) =2 W 15 16 - dB
Ddrain efficiency PL(AV) =2W 20 23 - %
PL(1dB) output power at 1 dB
gain compression 11 - - W
RLin input return loss PL(AV) =2W - 16 12 dB
The used Printed-Circuit Board (PCB) material is Rogers RO4350; thickness = 0.762 mm; r = 3.5;
thickness copper plating is 35 m.
See Table 8 for list of components.
Fig 2. Compon en t lay o ut
Table 8. List of components
See Figure 2 for component layout.
The used Printed-Circuit Board (PCB) material is Rogers RO4 350; thickness = 0.762 mm;
r = 3.5;
thickness copper plating is 35
m.
Component Description Value Remarks
C1, C4, C10, C13 multilayer ceramic chip capacitor 22 pF [1]
C2, C12 multilayer ceramic chip capacitor 1 F[2]
C3, C11 multilayer ceramic chip capacitor 100 nF [3]
C5, C9 multilayer ceramic chip capacitor 10 F; 50 V [4]
C6 multilayer ceramic chip capacitor 2.8 pF [1]
%/3*6
WR0+]
52PLO
&&
&
&
&
&
&
5
4
&
&
&
& &
&
DDD
,1387 287387
*1'*1'
%,$6 '5$,1
BLP7G22-10 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 2 — 30 May 2013 5 of 16
NXP Semiconductors BLP7G22-10
LDMOS driver transistor
[1] American Technical Ceramics type 100A or capacitor of same quality.
[2] Murata GRM31MR71H105KA88L or capacitor of same quality.
[3] Murata GRM21BR71H104KA01L or capacitor of same quality.
[4] Murata GRM32ER71H106KA88L or capacitor of same quality.
8.1.2 Graphs
8.1.2.1 Pulsed CW
C7 multilayer ceramic chip capacitor 3.9 pF [1]
C8 multilayer ceramic chip capacitor 1.7 pF [1]
R1 chip resistor 10 SMD 0805; 1 % tolerance
Table 8. List of components …continued
See Figure 2 for component layout.
The used Printed-Circuit Board (PCB) material is Rogers RO4 350; thickness = 0.762 mm;
r = 3.5;
thickness copper plating is 35
m.
Component Description Value Remarks
VDS =28V; I
Dq =110mA; T
case = 25 C; = 10 %;
tp=20s.
(1) Gp at f = 2110 MHz
(2) Gp at f = 2140 MHz
(3) Gp at f = 2170 MHz
(4) D at f = 2110 MHz
(5) D at f = 2140 MHz
(6) D at f = 2170 MHz
VDS = 28 V; f = 2140 MHz; Tcase = 25 C; = 10 %;
tp=20s.
(1) Gp at IDq = 90 mA
(2) Gp at IDq = 110 mA
(3) Gp at IDq = 130 mA
(4) D at IDq = 90 mA
(5) D at IDq = 110 mA
(6) D at IDq = 130 mA
Fig 3. Power gain and drain efficiency as function of
load power; typical values Fig 4. Po wer gain and drain efficiency as function of
load power; typical values
DDD
3/:
*S
*S
G%G%G%
Ș'
Ș'
DDD
3/:
*S
*S
G%G%G%
Ș'
Ș'
BLP7G22-10 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 2 — 30 May 2013 6 of 16
NXP Semiconductors BLP7G22-10
LDMOS driver transistor
VDS =28V; I
Dq = 110 mA; f = 2140 MHz; = 10 %; tp = 20 s.
(1) Gp at Tcase = 37 C
(2) Gp at Tcase = 25 C
(3) Gp at Tcase = 85 C
(4) D at Tcase = 37 C
(5) D at Tcase = 25 C
(6) D at Tcase = 85 C
Fig 5. Power gain an d drain efficiency as function of load power ; typi cal values
DDD
3/:
*S
*S
G%G%G%
Ș'
Ș'
BLP7G22-10 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 2 — 30 May 2013 7 of 16
NXP Semiconductors BLP7G22-10
LDMOS driver transistor
8.1.2.2 2-Carrier W-CDMA
VDS =28V; I
Dq =110mA; T
case = 25 C;
carrier spacing = 5 MHz; 46 % clipping; PAR = 8.4 dB at
0.01 % probability on CCDF.
(1) Gp at f = 2110 MHz
(2) Gp at f = 2140 MHz
(3) Gp at f = 2170 MHz
(4) D at f = 2110 MHz
(5) D at f = 2140 MHz
(6) D at f = 2170 MHz
VDS =28V; I
Dq =110mA; T
case = 25 C;
carrier spacing = 5 MHz; 46 % clipping; PAR = 8.4 dB at
0.01 % probability on CCDF.
(1) f = 2110 MHz
(2) f = 2140 MHz
(3) f = 2170 MHz
Fig 6. Power gain and drain efficiency as function of
load power; typical values Fig 7. Adjacent channel power ratio (5 MHz) as a
function of load power; typical values
DDD
3/:
*S
*S
G%G%G%
Ș'
Ș'
DDD
3/:
$&35$&3500
$&350
G%FG%FG%F
BLP7G22-10 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 2 — 30 May 2013 8 of 16
NXP Semiconductors BLP7G22-10
LDMOS driver transistor
8.2 Frequency band 728 MHz to 768 MHz
8.2.1 Application circuit
VDS =28V; I
Dq = 110 mA; f = 2140 MHz; carrier spacing = 5 MHz; 46 % clipping; PAR = 8.4 dB at
0.01 % probability on CCDF.
(1) Tcase = 37 C
(2) Tcase = 25 C
(3) Tcase = 85 C
Fig 8. Adjacent channe l power ratio (5 MHz) as a function of load power; typical valu es
DDD
3/:
$&35$&3500
$&350
G%FG%FG%F
The used Printed-Circuit Board (PCB) material is Rogers RO4350; thickness = 0.762 mm; r = 3.5;
thickness copper plating is 35 m.
See Table 9 for list of components.
Fig 9. Component layout
DDD
%/3*6
WR0+]
52PLO
,1387 287387
*1'
4
5
&&
& &
&
& &
& & &
+/
%,$6 '5$,1
*1'
& &
BLP7G22-10 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 2 — 30 May 2013 9 of 16
NXP Semiconductors BLP7G22-10
LDMOS driver transistor
[1] American Technical Ceramics type 100A or capacitor of same quality.
[2] Murata GRM21BR71H104KA01L or capacitor of same quality.
[3] Murata GRM32ER71H106KA88L or capacitor of same quality.
8.2.2 Graphs
8.2.2.1 2-Carrier W-CDMA
Table 9. List of components
See Figure 9 for component layout.
The used Printed-Circuit Board (PCB) material is Rogers RO4 350; thickness = 0.762 mm;
r = 3.5;
thickness copper plating is 35
m.
Component Description Value Remarks
C1, C12 multilayer ceramic chip capacitor 68 pF [1]
C2 multilayer ceramic chip capacitor 10 pF [1]
C3, C10 multilayer ceramic chip capacitor 100 pF [1]
C4, C9 multilayer ceramic chip capacitor 100 nF [2]
C5, C8 multilayer ceramic chip capacitor 10 F; 50 V [3]
C6 multilayer ceramic chip capacitor 36 pF [1]
C7 multilayer ceramic chip capacitor 9.1 pF [1]
C11 multilayer ceramic chip capacitor 7.5 pF [1]
R1 chip resistor 5.1 SMD 0805; 1 % tolerance
VDS =28V; I
Dq =110mA; T
case = 25 C;
carrier spacing = 5 MHz; 46 % clipping; PAR = 8.4 dB at
0.01 % probability on CCDF.
(1) f = 728 MHz
(2) f = 748 MHz
(3) f = 768 MHz
VDS =28V; I
Dq =110mA; T
case = 25 C;
carrier spacing = 5 MHz; 46 % clipping; PAR = 8.4 dB at
0.01 % probability on CCDF.
(1) f = 728 MHz
(2) f = 748 MHz
(3) f = 768 MHz
Fig 10. Power gain and drain efficiency as function of
load power; typical values Fig 11. Adjacent channel power ratio (5 MHz) as a
function of load power; typical values
DDD
3/:
*S
*S
G%G%G%
Ș'
Ș'
*S
*S
Ș'
Ș'
DDD
3/:
$&35$&3500
$&350
G%FG%FG%F
BLP7G22-10 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 2 — 30 May 2013 10 of 16
NXP Semiconductors BLP7G22-10
LDMOS driver transistor
9. Test information
9.1 Ruggedness in class-AB operation
The BLP7G22-10 is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: VDS =28V;
IDq =110mA; P
L= 10 W; frequency from 700 MHz to 2700 MHz.
BLP7G22-10 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 2 — 30 May 2013 11 of 16
NXP Semiconductors BLP7G22-10
LDMOS driver transistor
10. Package outline
Fig 12. Package outline SOT1 179-2 (HVSON12)
5HIHUHQFHV
2XWOLQH
YHUVLRQ
(XURSHDQ
SURMHFWLRQ ,VVXHGDWH
,(& -('(& -(,7$
627
02
VRWBSR
8QLW
PP
PD[
QRP
PLQ
$
'LPHQVLRQVPPDUHWKHRULJLQDOGLPHQVLRQV
1RWH
3ODVWLFRUPHWDOSURWUXVLRQVRIPPPD[LPXPSHUVLGHDUHQRWLQFOXGHG
+9621SODVWLFWKHUPDOHQKDQFHGYHU\WKLQVPDOORXWOLQHSDFNDJHQROHDGV
WHUPLQDOVERG\[[PP 627
$E
F'
'K( (K
HH
/
.
YZ
\
\
PP
VFDOH
&
\
&
\
;
% $
WHUPLQDO
LQGH[DUHD
'
(
GHWDLO;
$$
F
'K
(K
/
E
.
H
H
H
$&%Y
&Z
WHUPLQDO
LQGH[DUHD
BLP7G22-10 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 2 — 30 May 2013 12 of 16
NXP Semiconductors BLP7G22-10
LDMOS driver transistor
11. Handling information
12. Abbreviations
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
Table 10. Ab breviations
Acronym Description
3GPP 3rd Generation Partnership Project
CCDF Complementary Cumulative Distribution Function
CDMA Code Division Multiple Access
CW Continuous Wave
DPCH Dedicated Physical CHannel
EDGE Enhanced Data rates for GSM Evolution
ESD ElectroStatic Discharge
GSM Global System for Mobile Communication
LDMOS Laterally Diffused Metal-Oxide Semiconductor
LTE Long Term Evolution
MC-GSM Multi Carrier GSM
PAR Peak-to-Average Ratio
SMD Surface Mounted Device
VSWR Voltage Standing-Wave Ratio
W-CDMA Wideband Code Division Multiple Access
WiMAX Worldwide Interoperability for Microwave Access
BLP7G22-10 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 2 — 30 May 2013 13 of 16
NXP Semiconductors BLP7G22-10
LDMOS driver transistor
13. Revision history
Table 11. Revision history
Document ID Release date Data sheet statu s Change notice Supersedes
BLP7G22-10 v.2 20130530 Product data sheet - BLP7G22-10 v.1
Modifications: •Section 1 on page 1: several changes have been made
•Section 2 on page 2: several changes have been made
•Section 3 on page 2: several changes have been made
•Section 5 on page 3: section has been added
•Section 6 on page 3: several changes have been made
•Section 7 on page 3: several changes have been made
•Section 8 on page 4: section has been added
•Section 9 on page 10: section has been added
•Section 9.1 on page 10: section has been moved here from Section 7 on page 3
•Section 10 on page 11: the package outline has been changed
BLP7G22-10 v.1 20120213 Objective data sheet - -
BLP7G22-10 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 2 — 30 May 2013 14 of 16
NXP Semiconductors BLP7G22-10
LDMOS driver transistor
14. Legal information
14.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of de vice(s) descr ibed in th is docume nt may have cha nged since this docume nt was publis hed and ma y dif fer in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
14.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liab ility for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and tit le. A short data sh eet is intended
for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall pre vail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to off er functions and qualities beyond tho se described in the
Product data sheet.
14.3 Disclaimers
Limited warr a nty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Se miconductors takes no
responsibility for the content in this document if provided by an inf ormation
source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequ ential damages (including - wit hout limitatio n - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggreg ate and cumulative liabil ity towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all informa tion supplied prior
to the publication hereof .
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, lif e-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in perso nal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconducto rs products in such equipment or
applications and ther efore such inclu sion and/or use is at the cu stomer’s own
risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty tha t such application s will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and ope ration of their applications
and products using NXP Semiconductors product s, and NXP Semiconductors
accepts no liability for any assistance with applicati ons or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suit able and fit for the custome r’s applications and
products planned, as well as fo r the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for th e customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanent ly and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individua l agreement. In case an individual
agreement is concluded only the ter ms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing i n this document may be interpreted or
construed as an of fer t o sell product s that is open for accept ance or t he grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product develop ment.
Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.
Product [short] dat a sheet Production This document contains the product specifica tion.
BLP7G22-10 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 2 — 30 May 2013 15 of 16
NXP Semiconductors BLP7G22-10
LDMOS driver transistor
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for aut omo tive use. It i s neither qua lif ied nor test ed
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in au tomotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automot ive specifications and standard s, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product cl aims resulting from custome r design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a docume nt is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
14.4 Trademarks
Notice: All referenced b rands, produc t names, service names and trademarks
are the property of their respect i ve ow ners.
15. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
NXP Semiconductors BLP7G22-10
LDMOS driver transistor
© NXP B.V. 2013. All rights reserved.
For more information, please visit: http://www.nxp.co m
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 30 May 2013
Document identifier: BLP7 G2 2- 10
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
16. Contents
1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Recommended operating conditions. . . . . . . . 3
6 Thermal characteristics . . . . . . . . . . . . . . . . . . 3
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
8 Application information. . . . . . . . . . . . . . . . . . . 4
8.1 Frequency band 2110 MHz to 2170 MHz. . . . . 4
8.1.1 Application circuit . . . . . . . . . . . . . . . . . . . . . . . 4
8.1.2 Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
8.1.2.1 Pulsed CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
8.1.2.2 2-Carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 7
8.2 Frequency band 728 MHz to 768 MHz. . . . . . . 8
8.2.1 Application circuit . . . . . . . . . . . . . . . . . . . . . . . 8
8.2.2 Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
8.2.2.1 2-Carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 9
9 Test information. . . . . . . . . . . . . . . . . . . . . . . . 10
9.1 Ruggedness in class-AB operation . . . . . . . . 10
10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11
11 Handling information. . . . . . . . . . . . . . . . . . . . 12
12 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 12
13 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13
14 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14
14.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14
14.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
14.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
14.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15
15 Contact information. . . . . . . . . . . . . . . . . . . . . 15
16 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
