BLP7G22-10 LDMOS driver transistor Rev. 2 -- 30 May 2013 Product data sheet 1. Product profile 1.1 General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Table 1. Application performance (multiple frequencies) Typical RF performance at Tcase = 25 C; IDq = 110 mA; in a class-AB application circuit. f IDq VDS PL(AV) (MHz) (mA) (V) (W) (dB) (%) (dBc) Pulsed CW 2700 110 28 2 14.5 26 - 1-carrier W-CDMA 748 110 28 0.7 27.5 13.5 43 [1] 748 110 28 2 27.5 25 40 2140 110 28 0.7 17.4 13 51 2140 110 28 2 17.4 25 40 2-carrier W-CDMA [1] Gp D Test signal ACPR5M Test signal: 2-carrier W-CDMA; carrier spacing = 5 MHz; PAR = 8.4 dB at 0.01 % probability on CCDF; RF performance at VDS = 28 V; IDq = 110 mA. 1.2 Features and benefits High efficiency Excellent ruggedness Designed for broadband operation Excellent thermal stability High power gain Integrated ESD protection Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications CDMA W-CDMA GSM EDGE MC-GSM LTE WiMAX BLP7G22-10 NXP Semiconductors LDMOS driver transistor 2. Pinning information Table 2. Pinning Pin Description 1, 6, 7, 12 n.c. 2, 3, 4, 5 gate 8, 9, 10, 11 drain exposed die-pad source Simplified outline Graphic symbol [1] H[SRVHG GLHSDG 7UDQVSDUHQWWRSYLHZ [1] DDD To be used in single ended applications only. 3. Ordering information Table 3. Ordering information Type number Package Name BLP7G22-10 Description Version HVSON12 plastic thermal enhanced very thin small outline package; no leads; 12 terminals; body 6 4 0.85 mm SOT1179-2 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). BLP7G22-10 Product data sheet Symbol Parameter Conditions Min Max Unit VDS drain-source voltage - 65 V VGS gate-source voltage 0.5 +13 V Tstg storage temperature 65 +150 C Tj junction temperature - 150 C All information provided in this document is subject to legal disclaimers. Rev. 2 -- 30 May 2013 (c) NXP B.V. 2013. All rights reserved. 2 of 16 BLP7G22-10 NXP Semiconductors LDMOS driver transistor 5. Recommended operating conditions See application note AN11198 for more details. DDD 7FDVH & Fig 1. 3 : Recommended operating area; case temperature as a function of power dissipation 6. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Rth(j-c) thermal resistance from junction to case Tcase = 70 C; PL = 2 W Typ Unit 3.2 K/W 7. Characteristics Table 6. DC characteristics Tj = 25 C; unless otherwise specified. Symbol Parameter Conditions V(BR)DSS drain-source breakdown voltage BLP7G22-10 Product data sheet Min Typ Max Unit VGS = 0 V; ID = 0.18 mA 65 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 18 mA 1.5 1.9 2.3 V IDSS drain leakage current VGS = 0 V; VDS = 28 V 1.4 - +1.4 A IDSX drain cut-off current VGS = VGS(th) + 3.75 V - - A IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 140 nA gfs forward transconductance VDS = 10 V; ID = 18 mA - 160 - mS RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; VDS = 10 V; ID = 630 mA - 1000 - m All information provided in this document is subject to legal disclaimers. Rev. 2 -- 30 May 2013 3.2 (c) NXP B.V. 2013. All rights reserved. 3 of 16 BLP7G22-10 NXP Semiconductors LDMOS driver transistor Table 7. RF characteristics Test signal: 1-tone pulsed; tp = 50 s; = 10 %; f = 2140 MHz; RF performance at VDS = 28 V; IDq = 110 mA; Tcase = 25 C; unless otherwise specified, in a production circuit. Symbol Parameter Conditions Min Typ Max Unit Gp power gain PL(AV) = 2 W 15 16 - dB D drain efficiency PL(AV) = 2 W 20 23 - % PL(1dB) output power at 1 dB gain compression 11 - - W RLin input return loss - 16 12 dB PL(AV) = 2 W 8. Application information 8.1 Frequency band 2110 MHz to 2170 MHz 8.1.1 Application circuit %,$6 '5$,1 & & & & & & & & 5 & & & & & 4 ,1387 287387 *1' %/3*6 WR0+] 52PLO *1' DDD The used Printed-Circuit Board (PCB) material is Rogers RO4350; thickness = 0.762 mm; r = 3.5; thickness copper plating is 35 m. See Table 8 for list of components. Fig 2. Component layout Table 8. List of components See Figure 2 for component layout. The used Printed-Circuit Board (PCB) material is Rogers RO4350; thickness = 0.762 mm; r = 3.5; thickness copper plating is 35 m. Component Description Value C1, C4, C10, C13 multilayer ceramic chip capacitor 22 pF BLP7G22-10 Product data sheet Remarks [1] C2, C12 multilayer ceramic chip capacitor 1 F [2] C3, C11 multilayer ceramic chip capacitor 100 nF [3] C5, C9 multilayer ceramic chip capacitor 10 F; 50 V [4] C6 multilayer ceramic chip capacitor 2.8 pF [1] All information provided in this document is subject to legal disclaimers. Rev. 2 -- 30 May 2013 (c) NXP B.V. 2013. All rights reserved. 4 of 16 BLP7G22-10 NXP Semiconductors LDMOS driver transistor Table 8. List of components ...continued See Figure 2 for component layout. The used Printed-Circuit Board (PCB) material is Rogers RO4350; thickness = 0.762 mm; r = 3.5; thickness copper plating is 35 m. Component Description Value Remarks C7 multilayer ceramic chip capacitor 3.9 pF [1] C8 multilayer ceramic chip capacitor 1.7 pF [1] R1 chip resistor 10 SMD 0805; 1 % tolerance [1] American Technical Ceramics type 100A or capacitor of same quality. [2] Murata GRM31MR71H105KA88L or capacitor of same quality. [3] Murata GRM21BR71H104KA01L or capacitor of same quality. [4] Murata GRM32ER71H106KA88L or capacitor of same quality. 8.1.2 Graphs 8.1.2.1 Pulsed CW DDD *S G% DDD ' ' 3/ : (1) Gp at IDq = 90 mA (2) Gp at f = 2140 MHz (2) Gp at IDq = 110 mA (3) Gp at f = 2170 MHz (3) Gp at IDq = 130 mA (4) D at f = 2110 MHz (4) D at IDq = 90 mA (5) D at f = 2140 MHz (5) D at IDq = 110 mA (6) D at f = 2170 MHz (6) D at IDq = 130 mA BLP7G22-10 Product data sheet 3/ : VDS = 28 V; f = 2140 MHz; Tcase = 25 C; = 10 %; tp = 20 s. (1) Gp at f = 2110 MHz Power gain and drain efficiency as function of load power; typical values VDS = 28 V; IDq = 110 mA; Tcase = 25 C; = 10 %; tp = 20 s. Fig 3. *S G% Fig 4. Power gain and drain efficiency as function of load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 -- 30 May 2013 (c) NXP B.V. 2013. All rights reserved. 5 of 16 BLP7G22-10 NXP Semiconductors LDMOS driver transistor DDD ' *S G% 3/ : VDS = 28 V; IDq = 110 mA; f = 2140 MHz; = 10 %; tp = 20 s. (1) Gp at Tcase = 37 C (2) Gp at Tcase = 25 C (3) Gp at Tcase = 85 C (4) D at Tcase = 37 C (5) D at Tcase = 25 C (6) D at Tcase = 85 C Fig 5. BLP7G22-10 Product data sheet Power gain and drain efficiency as function of load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 -- 30 May 2013 (c) NXP B.V. 2013. All rights reserved. 6 of 16 BLP7G22-10 NXP Semiconductors LDMOS driver transistor 8.1.2.2 2-Carrier W-CDMA DDD ' *S G% DDD $&350 G%F 3/ : VDS = 28 V; IDq = 110 mA; Tcase = 25 C; carrier spacing = 5 MHz; 46 % clipping; PAR = 8.4 dB at 0.01 % probability on CCDF. 3/ : VDS = 28 V; IDq = 110 mA; Tcase = 25 C; carrier spacing = 5 MHz; 46 % clipping; PAR = 8.4 dB at 0.01 % probability on CCDF. (1) Gp at f = 2110 MHz (1) f = 2110 MHz (2) Gp at f = 2140 MHz (2) f = 2140 MHz (3) Gp at f = 2170 MHz (3) f = 2170 MHz (4) D at f = 2110 MHz (5) D at f = 2140 MHz (6) D at f = 2170 MHz Fig 6. Power gain and drain efficiency as function of load power; typical values BLP7G22-10 Product data sheet Fig 7. Adjacent channel power ratio (5 MHz) as a function of load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 -- 30 May 2013 (c) NXP B.V. 2013. All rights reserved. 7 of 16 BLP7G22-10 NXP Semiconductors LDMOS driver transistor DDD $&350 G%F 3/ : VDS = 28 V; IDq = 110 mA; f = 2140 MHz; carrier spacing = 5 MHz; 46 % clipping; PAR = 8.4 dB at 0.01 % probability on CCDF. (1) Tcase = 37 C (2) Tcase = 25 C (3) Tcase = 85 C Fig 8. Adjacent channel power ratio (5 MHz) as a function of load power; typical values 8.2 Frequency band 728 MHz to 768 MHz 8.2.1 Application circuit & & & & & %,$6 & '5$,1 5 & & & & & & 4 + ,1387 *1' *1' / 287387 %/3*6 WR0+] 52PLO DDD The used Printed-Circuit Board (PCB) material is Rogers RO4350; thickness = 0.762 mm; r = 3.5; thickness copper plating is 35 m. See Table 9 for list of components. Fig 9. BLP7G22-10 Product data sheet Component layout All information provided in this document is subject to legal disclaimers. Rev. 2 -- 30 May 2013 (c) NXP B.V. 2013. All rights reserved. 8 of 16 BLP7G22-10 NXP Semiconductors LDMOS driver transistor Table 9. List of components See Figure 9 for component layout. The used Printed-Circuit Board (PCB) material is Rogers RO4350; thickness = 0.762 mm; r = 3.5; thickness copper plating is 35 m. Component Description Value Remarks C1, C12 multilayer ceramic chip capacitor 68 pF [1] C2 multilayer ceramic chip capacitor 10 pF [1] C3, C10 multilayer ceramic chip capacitor 100 pF [1] C4, C9 multilayer ceramic chip capacitor 100 nF [2] C5, C8 multilayer ceramic chip capacitor 10 F; 50 V [3] C6 multilayer ceramic chip capacitor 36 pF [1] C7 multilayer ceramic chip capacitor 9.1 pF [1] C11 multilayer ceramic chip capacitor 7.5 pF [1] R1 chip resistor 5.1 SMD 0805; 1 % tolerance [1] American Technical Ceramics type 100A or capacitor of same quality. [2] Murata GRM21BR71H104KA01L or capacitor of same quality. [3] Murata GRM32ER71H106KA88L or capacitor of same quality. 8.2.2 Graphs 8.2.2.1 2-Carrier W-CDMA DDD *S G% ' *S DDD $&350 G%F ' 3/ : VDS = 28 V; IDq = 110 mA; Tcase = 25 C; carrier spacing = 5 MHz; 46 % clipping; PAR = 8.4 dB at 0.01 % probability on CCDF. (1) f = 728 MHz (2) f = 748 MHz (2) f = 748 MHz (3) f = 768 MHz (3) f = 768 MHz BLP7G22-10 Product data sheet 3/ : VDS = 28 V; IDq = 110 mA; Tcase = 25 C; carrier spacing = 5 MHz; 46 % clipping; PAR = 8.4 dB at 0.01 % probability on CCDF. (1) f = 728 MHz Fig 10. Power gain and drain efficiency as function of load power; typical values Fig 11. Adjacent channel power ratio (5 MHz) as a function of load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 -- 30 May 2013 (c) NXP B.V. 2013. All rights reserved. 9 of 16 BLP7G22-10 NXP Semiconductors LDMOS driver transistor 9. Test information 9.1 Ruggedness in class-AB operation The BLP7G22-10 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 110 mA; PL = 10 W; frequency from 700 MHz to 2700 MHz. BLP7G22-10 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 -- 30 May 2013 (c) NXP B.V. 2013. All rights reserved. 10 of 16 BLP7G22-10 NXP Semiconductors LDMOS driver transistor 10. Package outline +9621SODVWLFWKHUPDOHQKDQFHGYHU\WKLQVPDOORXWOLQHSDFNDJHQROHDGV WHUPLQDOVERG\[[PP 627 ; % ' $ ( $ $ F WHUPLQDO LQGH[DUHD GHWDLO; H H WHUPLQDO LQGH[DUHD H Y Z E & & $ % & \ & \ / . (K 'K 'LPHQVLRQV PPDUHWKHRULJLQDOGLPHQVLRQV 8QLW PP $ $ E PD[ QRP PLQ PP VFDOH F ' 'K ( (K H H . / Y Z \ \ 1RWH 3ODVWLFRUPHWDOSURWUXVLRQVRIPPPD[LPXPSHUVLGHDUHQRWLQFOXGHG 5HIHUHQFHV 2XWOLQH YHUVLRQ ,(& -('(& -(,7$ 627 02 VRWBSR (XURSHDQ SURMHFWLRQ ,VVXHGDWH Fig 12. Package outline SOT1179-2 (HVSON12) BLP7G22-10 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 -- 30 May 2013 (c) NXP B.V. 2013. All rights reserved. 11 of 16 BLP7G22-10 NXP Semiconductors LDMOS driver transistor 11. Handling information CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 12. Abbreviations Table 10. BLP7G22-10 Product data sheet Abbreviations Acronym Description 3GPP 3rd Generation Partnership Project CCDF Complementary Cumulative Distribution Function CDMA Code Division Multiple Access CW Continuous Wave DPCH Dedicated Physical CHannel EDGE Enhanced Data rates for GSM Evolution ESD ElectroStatic Discharge GSM Global System for Mobile Communication LDMOS Laterally Diffused Metal-Oxide Semiconductor LTE Long Term Evolution MC-GSM Multi Carrier GSM PAR Peak-to-Average Ratio SMD Surface Mounted Device VSWR Voltage Standing-Wave Ratio W-CDMA Wideband Code Division Multiple Access WiMAX Worldwide Interoperability for Microwave Access All information provided in this document is subject to legal disclaimers. Rev. 2 -- 30 May 2013 (c) NXP B.V. 2013. All rights reserved. 12 of 16 BLP7G22-10 NXP Semiconductors LDMOS driver transistor 13. Revision history Table 11. Revision history Document ID Release date Data sheet status Change notice Supersedes BLP7G22-10 v.2 20130530 Product data sheet - BLP7G22-10 v.1 Modifications: BLP7G22-10 v.1 BLP7G22-10 Product data sheet * * * * * * * * * * Section 1 on page 1: several changes have been made Section 2 on page 2: several changes have been made Section 3 on page 2: several changes have been made Section 5 on page 3: section has been added Section 6 on page 3: several changes have been made Section 7 on page 3: several changes have been made Section 8 on page 4: section has been added Section 9 on page 10: section has been added Section 9.1 on page 10: section has been moved here from Section 7 on page 3 Section 10 on page 11: the package outline has been changed 20120213 Objective data sheet - All information provided in this document is subject to legal disclaimers. Rev. 2 -- 30 May 2013 - (c) NXP B.V. 2013. All rights reserved. 13 of 16 BLP7G22-10 NXP Semiconductors LDMOS driver transistor 14. Legal information 14.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term `short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. 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This document supersedes and replaces all information supplied prior to the publication hereof. BLP7G22-10 Product data sheet Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer's sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer's applications and products planned, as well as for the planned application and use of customer's third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer's applications or products, or the application or use by customer's third party customer(s). Customer is responsible for doing all necessary testing for the customer's applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer's third party customer(s). NXP does not accept any liability in this respect. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer's general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. All information provided in this document is subject to legal disclaimers. Rev. 2 -- 30 May 2013 (c) NXP B.V. 2013. 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In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors' warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors' specifications such use shall be solely at customer's own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors' standard warranty and NXP Semiconductors' product specifications. Translations -- A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 14.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 15. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BLP7G22-10 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 -- 30 May 2013 (c) NXP B.V. 2013. All rights reserved. 15 of 16 BLP7G22-10 NXP Semiconductors LDMOS driver transistor 16. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 8 8.1 8.1.1 8.1.2 8.1.2.1 8.1.2.2 8.2 8.2.1 8.2.2 8.2.2.1 9 9.1 10 11 12 13 14 14.1 14.2 14.3 14.4 15 16 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Recommended operating conditions. . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 4 Frequency band 2110 MHz to 2170 MHz . . . . . 4 Application circuit . . . . . . . . . . . . . . . . . . . . . . . 4 Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Pulsed CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2-Carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 7 Frequency band 728 MHz to 768 MHz . . . . . . . 8 Application circuit . . . . . . . . . . . . . . . . . . . . . . . 8 Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 2-Carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 9 Test information . . . . . . . . . . . . . . . . . . . . . . . . 10 Ruggedness in class-AB operation . . . . . . . . 10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 Handling information. . . . . . . . . . . . . . . . . . . . 12 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Contact information. . . . . . . . . . . . . . . . . . . . . 15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'. (c) NXP B.V. 2013. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 30 May 2013 Document identifier: BLP7G22-10