©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOC20xM, MOC21xM Rev. 1.5 4
MOC20xM, MOC21xM — 8-pin SOIC Single-Channel Phototransistor Output Optocoupler
Electrical Characteristics
TA = 25°C unless otherwise specified.
Symbol Parameter Test Conditions Min. Typ. Max. Unit
EMITTER
VF
Input Forward Voltage
MOC216M, MOC217M IF = 1 mA 1.07 1.3 V
MOC205M, MOC206M, MOC207M
MOC211M, MOC212M, MOC213M IF = 10 mA 1.15 1.5 V
IRReverse Leakage Current VR = 6 V 0.001 100 µA
CIN Input Capacitance 18 pF
DETECTOR
ICEO1 Collector-Emitter Dark Current VCE = 10 V, TA = 25°C 1.0 50 nA
ICEO2 VCE = 10 V, TA = 100°C 1.0 µA
BVCEO
Collector-Emitter Breakdown Voltage
MOC205M, MOC206M, MOC207M IC = 100 µA 70 100 V
MOC211M, MOC212M, MOC213M,
MOC216M, MOC217M IC = 100 µA 30 100 V
BVCBO Collector-Base Breakdown Voltage IC = 10 µA 70 120 V
BVECO Emitter-Collector Breakdown Voltage IE = 100 µA 7 10 V
CCE Collector-Emitter Capacitance f = 1.0 MHz, VCE = 0 7 pF
COUPLED
CTR
Collector-Output Current
MOC205M IF = 10 mA, VCE = 10 V 40 80 %
MOC206M IF = 10 mA, VCE = 10 V 63 125 %
MOC207M IF = 10 mA, VCE = 10 V 100 200 %
MOC211M IF = 10 mA, VCE = 10 V 20 %
MOC212M IF = 10 mA, VCE = 10 V 50 %
MOC213M IF = 10 mA, VCE = 10 V 100 %
MOC216M IF = 1 mA, VCE = 5 V 50 %
MOC217M IF = 1 mA, VCE = 5 V 100 %
VCE(SAT)
Collector-Emitter Saturation Voltage
MOC205M, MOC206M, MOC207M
MOC211M, MOC212M, MOC213M IC = 2 mA, IF = 10 mA 0.4 V
MOC216M, MOC217M IC = 100 µA, IF = 1 mA 0.4 V
ton Turn-On Time IC = 2 mA, VCC = 10 V,
RL = 100 Ω (Figure 12) 7.5 µs
toff Turn-Off Time IC = 2 mA, VCC = 10 V,
RL = 100 Ω (Figure 12) 5.7 µs
trRise Time IC = 2 mA, VCC = 10 V,
RL = 100 Ω (Figure 12) 3.2 µs
tfFall Time IC = 2 mA, VCC = 10 V,
RL = 100 Ω (Figure 12) 4.7 µs