POWER INTEGRATED CIRCUIT Switching Regulator 15 Amp Positive and Negative Power Output Stages FEATURES Designed and characterized for switching regulator applications PIC625 PIC626 PIC627 PIC635 PIC636 PIC637 Cost saving design reduces size, improves efficiency, reduces noise and RFI (See note 4.) High operating frequency (to >100kHz) results in smaller inductor-capacitor filter and improved power supply response time High operating efficiency: Typical 7A circuit performance Rise and Fall time <300 ns Efficiency >85% No reverse recovery spike generated by commutating diode (See note 4. and Fig. 2.) @ Electrically isolated, 4-Pin, TO66 hermetic case (500V, 1A, all leads common) DESCRIPTION The Microsemi ESP Switching Regulator is a unique hybrid transistor circuit, specifically designed, constructed and speci- fied for use in high current switching regulator applications. The designer is thus relieved of one of the most time consum- ing, tedious and critical aspects of switching regulator design: choosing the appropriate switching transistors and commutat- ing diode and empirically determining the optimum drive and bias conditions, Switching regulators, when compared to conventional regula- tors, result in significant reductions in size, weight and internal power losses and a major decrease in overall cost. Using the Microsemi PIC600 series, the designer can achieve further improvements in size, weight, efficiency and costs. At the same time, because of the PICG00 series design and packag- ing, the designer is aided in overcoming two of the most signifi- cant drawbacks to switching regulators: noise generation and slow response time; there is, in fact, no diode reverse recovery spike (see note 4.). The PIC600 series switching regulators are designed and characterized to be driven with standard integrated circuit volt- age regulators. They are completely characterized over their entire operating range of -55C to +125C. The devices are enclosed in a special 4-pin TO-66 package, hermetically sealed for high reliability. The hybrid circuit construction utilizes thick film resistors on a beryllia substrate for maximum thermal conductivity and resultant low thermal impedance. All of the active elements in the hybrid are fully passivated. PIC625 SCHEMATIC PIC635 PIC626 PIC636 POS. 4 piesa? 1 POS. NEG. 4 PIC637 1 NEG. INPUT OUTPUT INPUT OUTPUT 3 2 3. O2 DRIVE COMMON DRIVE COMMON MECHANICAL SPECIFICATIONS PiG625 PIC626 PiC627 PIC6535 PIC636 PIC637 4-Pin TO-66 NOTES: . Case is electrically isolated. . Loads may be soldered to within 1,6" Of base provided temperature- Ne time exposure is tess than 260C ins. __, mm for 10 seconds. A | 620 Max 18.75 MAX. Bf 080-075 1.27-1.91 F | .028-.034 0-71-0.86 CYS - DRIVE(3) D | .958-.952 24,33-24.43 \ go lex INPUTCA) | 490 210 493: 5.98 0 E G F 190-210 4835.8 | | | L f G | 350 MAX. RAD. [8.89 MAX. RAD D (oer x | 570-590 1448.14.99 tT 1 H J 142-152 DIA. 361-3 86 DIA. ke [360 sun 14 min COMMON(2) J u | .250-.34 6.35-8.64 QUTPUT(1) Microsemi Verosemi Corp. Watertown 8/78 7-8 The diode expertsPIC625 PIC626 PIC627 PIC635 PIC636 PIC637 ABSOLUTE MAXIMUM RATINGS PIC625 PIC626 PIC627 PICG63S PIG636 PIC637 Input Voltage, V,., Output Voltage, V\) .. Drive-Input Reverse Valtage, V5_, Output Current, |, Drive Current, |, .. Thermal Resistance Junction to Case, 6). . 80V. we BV... IB5A..... wa OA... Power Switch . . boas boetteces Sotstnisetine . . woe AOE CPW ccc ee ritettete eerie Commutating Diode oo. eee ce ete ee csnteise co cerrceree AOE LW cee sree cnet ettenntennes Case to Ambient, Boy cs nn a coe voces couse 60.0C/W... ee Operating Temperature Range, T. ..... ec eetvasts cutest etieansstessceticetieesarssesteees cree 55C to 128C. Maximum Junction Temperature, Tj . cette ecceteretetesanettercceesettciscts seventeen PLO Cc nc ect tee Storage Temperature Range bocce cittcttieeciusiattetievsaresesn - vec erveee, wO5C to +150C ELECTRICAL SPECIFICATIONS (at 25C unless noted) PIC625/ 626/627 P1C835/636/637 Test symbol Min. | Typ. | Max. Min. | Typ. Max. [Units Conditions Current Delay Time ty; | 35 | 6 | | 35 60 ns} V,, = 25V(25) Current Rise Time ty | 6) 150 | ]) 65 | 175 | ns; V4 == 5V(5V) Voltage Rise Time ty | 40 60 | 40 60 ns | ti, 7A(7A) Voltage Storage Time t., |900; | ]} 900} ns | 1, = 30mA(30mA) NOTE 5 Voltage Fall Time t,, | 70 | 175 | |} 100 | 300 | ns; See Figure 2 Current Fall Time te | 175 | 300} | 175 | 300 | ns| Seenotes 1,2,4 Efficiency (Notes 2 and 4) 2 | si || & % On-State Voltage (Note 3) Veuoy | | LO} 15 | | 10 |~15] V | 1,=7A(7A), |, = .03A(03A) NOTE 5 On-State Voltage (Note 3) Va fon} | 25) 35 | } 25 7,-3.5} V! 1,= 15A(15A), 1, = .03A(.03A) NOTE 5 Diode Fwd. Voltage (Note 3) | Vpifo) | | 85 | 125 | | 85 /125] VJ I, = 7A(7A) Diode Fwd. Voltage (Note 3} Vo_1fo0) | 95 | 175 | | ~95 }-175) V \, = I5A(1i5A} Oif-State Current Ta | O01; 10 | |-01]-10} vA) V,= Rated input voltage Off-State Current Vat _ 10 _ }| 10]} pA) V, = Rated Input voltage, T, = 100C Diode Reverse Current lis |} 10/ 10 | | 10)10] wA| V, = Rated output voltage Diode Reverse Current th | 500) | | 500 _ vA) V, = Rated output voltage, T, = 100C NOTES: 1. In switching an inductive load, the current will lead the voltage on turn-on and lag the voltage on turn-off (see Figure 2). Therefore, Voltage Delay Time (tov) = tai + ty and Current Storage Time (tsi) = tsv + tty. 2. The efficiency is a measure of internal power losses and is equal to Output Power divided by Input Power. The switching speed circuit of Figure 1, in which the efficiency is measured, is representative of typical operating conditions for the PIC6UO series switching regulators. 3. Pulse test: Duration = 3004s, Duty Cycle < 2%. 4. As can be seen from the switching waveforms shown in Figure 2, no reverse of forward recovery spike is generated by the commutating diode during switching! This reduces self-generated noise, since no current spike is fed through the switching regulator. It also improves efficiency and reliability, since the power switch only carries current during turn on. . To insure safe operation lg should be = |30mA| during Ton. Operation at Ig <|30mA! can permanently damage device. ao POWER DISSIPATION CONSIDERATIONS The total power losses in the switching regulator is the sum of the switching losses, and the power switch and diode D.C. losses. Once total power dissipation has been detarmined, the Power Dissipation curve, or thermal resistance data may be used ta determine the allowable case or ambient-temperature for any operating condition. The switching losses curve presents data for a frequency of 20KHz. To find losses at any other frequency, multiply by f/20KHz. The D.C. losses curve presents data for a duty cycle of .2. To find D.C. losses at any other duty cycle. multiply by D/.2 for the power switch and by (1-D)/.8 forthe diode. At frequencies much below 10KHz the above method for determining the allowable case or ambient temperature becomes invalid and a detailed transient thermal analysis must be performed. 580 PLEASANT STREET WATERTOWN, MA 02172 TEL. (617) 926-0404 + FAX (617) 924-1235 73 PRINTED IN U.S.A.P1C625 PIC626 PIC627 PIC635 PIC636 PIC637 Power Dissipation Efficiency 0 100 xf = 20KHz, V,,, = 20 i 2 90 2 35 f 20KHz,V,, = 5V 3 a0 E 30 f= 50K Ay g 70 & 25 > > a 3 60 5 z bt ul g 20 q 3G 50 r g \ E ag uw 15 wl rm | oO N | vl . | a N\ = 30 + AS measured in the circuit shown ui 10 | Maximum allowable average in Figure 1. 2 power dissipation each, for the N\ 20 - v= 25V | 5 | power switch and for the diode. Vou = Vig X Duty Cycle ac ' Maximum allowable case 10 + J, = 30mA temperature = 125C T, = 25C | t 1 4 L 0 1 \ Jt i. 1 joi 3 50 25 oO 25 50 78 100 125 4150 2 3 A 5 6 7 8 G10 15 20 To CASE TEMPERATURE (C) 1, OUTPUT CURRENT (A) Diode D.C. Losses Power Switch D.C. Losses 7 - 100 100 E Power Switch Duty Cycle 0.2 = Duty Cycle = 0.2, |, = 30mA 50 Diode Duty Cycle = 0.8 50 T, = 25C rT, = 25C To obtain power switch losses at [ To obtain diode losses at any any other duty cycle, multiply by 20 + other duty cycle, multiply by 7 20 | D/.2, where D is the duty cycle. | 1-D)/.8 where D = Power ea t i = Lowe \ = 10 ESwitch Duty Cycle. = = 10 F 5 oot a a Z we FE aximum TYPICAL a 5 "A 8 1 1 t 2 2. Qo 4 7] 3 MAXIMUM _ [7 TYPICAL 7 L4 ao 2 7 cs LT G 1 2 10 ao 1 Ze = 5 5 ne 2 + 2 10 a 2 3004 5 6 7 8910 20 2 3 4 5 6 78 910 20 1, OUTPUT CURRENT {A} 1, OUTPUT CURRENT (A) wou Maximum Safe Operating Area Switching Losses - PIC 625, 626, 627-635, 636, 637 2 MUM Power ~ 8 < e g aq 3 & g 3 = > oe! oO e Te = 100C e. 2 = 6 a T = PIC 625, 635 PIC 626, 636 TYPICAL PIC 627, 637 2 3 4 5 6 78910 20 1 2 3 45 10 20 30 4050 100 1, OUTPUT CURRENT (A) Va-1(ON) ON-STATE VOLTAGE To determine switching losses at any other frequency, multiply by f/20KH2z where f is the frequency at which the losses are to be determined. 580 PLEASANT STREET - WATERTOWN, MA 02172 TEL. (617) 926-0404 FAX (617) 924-1235 7-10 PRINTED IN U.S.A~ 180uH V,= +25V PIC625 PICB26 Pics27 lopive == -30MA Puise Width.= l0gs Rep. Rate = 20kHz em OO ~ ov Figure 1. PIC625, 626, 627 Switching Speed Circuit On-State Characteristics 1, ON-STATE CURRENT (A) o 1 2 3 e.(on} ON-STATE VOLTAGE (} Turn-on Time 1000 ae As measured in the circuit in Figure 1, 500 400 yn w 3.8 t TIME (ns) he So 2 40 30 20 10 2 3 4 5 6 7 8910 , OUTPUT CURRENT (A) 580 PLEASANT STREET WATERTOWN, MA 02172 TEL. (617) 926-0404 + FAX (617) 924-1235 4 20 PIC625 PIC626 PIC627 PIC635 PIC636 PIC637 |, DIODE FORWARD CURRENT (A) 1000 500 400 300 200 100 t TIME (ns} 50 4a 30 20 10 % A OY. $ POWER SWITCH b T,,=10us- Tou, = 40uS Note: No Diode Reverse or Forward Recovery Spike (See note 4.) ff i 4 . Von 7 7 COMMUTATING DIODE 4 Figure 2, PIC625, 626, 627 Switching Waveforms Note: PIC635, PICG36, PIC637 Circuit and waveforms are identical but of apposite polarity (V,, = 25V, Vi = SV; logy = +390MAD Diode Forward Characteristics Q 5 1 15 2 Ve.(on) DIODE FORWARD VOLTAGE () Fall Time AS measured in the shown in Figure 1. V,, = 25V Vout = 5v 1, = 30mA 25C 2 3 4 5678910 \, QUT PUT CURRENT {A} 2.5 20 PRINTED IN U.S.A.