SGP30N60HS
SGW30N60HS
Power Semiconductors 1 Rev. 2.3 Sep 08
High Speed IGBT in NPT-technology
• 30% lower Eoff compared to previous generation
• Short circuit withstand time – 10 µs
• Designed for operation above 30 kHz
• NPT-Technology for 600V applications offers:
- parallel switching capability
- moderate Eoff increase with temperature
- very tight parameter distribution
• High ruggedness, temperature stable behaviour
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1 for target applications
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type VCE I
C Eoff) Tj Marking Package
SGP30N60HS 600V 30 480µJ
150°CG30N60HS PG-TO-220-3-1
SGW30N60HS 600V 30 480µJ
150°CG30N60HS PG-TO-247-3
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCE 600 V
DC collector current
TC = 25°C
TC = 100°C
IC
41
30
Pulsed collector current, tp limited by Tjmax ICpuls 112
Turn off safe operating area
VCE ≤ 600V, Tj ≤ 150°C
- 112
A
Avalanche energy single pulse
IC = 20A, VCC=50V, RGE=25Ω
start TJ=25°C
EAS 165 mJ
Gate-emitter voltage static
transient (tp<1µs, D<0.05)
VGE ±20
±30
V
Short circuit withstand time2)
VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C
tSC 10
µs
Power dissipation
TC = 25°C
Ptot 250 W
Operating junction and storage temperature Tj ,
Tstg
-55...+150
Time limited operating junction temperature for t < 150h Tj(tl) 175
Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260
°C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
G
C
E
PG-TO-247-3 PG-TO-220-3-1
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SGP30N60HS
SGW30N60HS
Power Semiconductors 2 Rev. 2.3 Sep 08
Thermal Resistance
Parameter Symbol Conditions Max. Value Unit
Characteristic
IGBT thermal resistance,
junction – case
RthJC 0.5 K/W
Thermal resistance,
junction – ambient
RthJA PG-TO-220-3-1
PG-TO-247-3-21
62
40
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Value
Parameter Symbol Conditions
min. Typ. max.
Unit
Static Characteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V, IC=500µA600 - -
Collector-emitter saturation voltage VCE(sat) VGE = 15V, IC=30A
Tj=25°C
Tj=150°C
2.8
3.5
3.15
4.00
Gate-emitter threshold voltage VGE(th) IC=700µA,VCE=VGE 3 4 5
V
Zero gate voltage collector current
ICES VCE=600V,VGE=0V
Tj=25°C
Tj=150°C
-
-
-
-
40
3000
µA
Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA
Transconductance gfs VCE=20V, IC=30A - 20 - S
Dynamic Characteristic
Input capacitance Ciss - 1500
Output capacitance Coss - 150
Reverse transfer capacitance Crss
VCE=25V,
VGE=0V,
f=1MHz - 92
pF
Gate charge QGate VCC=480V, IC=30A
VGE=15V
- 141 nC
Internal emitter inductance
measured 5mm (0.197 in.) from case
LE PG-TO-220-3-1
PG-TO-247-3-21
- 7
13
nH
Short circuit collector current1) IC(SC) VGE=15V,tSC≤10µs
VCC ≤ 600V,
Tj ≤ 150°C
- 220 A
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
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SGP30N60HS
SGW30N60HS
Power Semiconductors 3 Rev. 2.3 Sep 08
Switching Characteristic, Inductive Load, at Tj=25 °C
Value
Parameter Symbol Conditions
min. typ. max.
Unit
IGBT Characteristic
Turn-on delay time td(on) - 20
Rise time tr - 21
Turn-off delay time td(off) - 250
Fall time tf - 25
ns
Turn-on energy Eon - 0.60
Turn-off energy Eoff - 0.55
Total switching energy Ets
Tj=25°C,
VCC=400V,IC=30A,
VGE=0/15V,
RG=11Ω
L
σ
1) =60nH,
C
σ
1) =40pF
Energy losses include
“tail” and diode
reverse recovery. - 1.15
mJ
Switching Characteristic, Inductive Load, at Tj=150 °C
Value
Parameter Symbol Conditions
min. typ. max.
Unit
IGBT Characteristic
Turn-on delay time td(on) - 16
Rise time tr - 13
Turn-off delay time td(off) - 122
Fall time tf - 29
ns
Turn-on energy Eon - 0.78
Turn-off energy Eoff - 0.48
Total switching energy Ets
Tj=150°C
VCC=400V,IC=30A,
VGE=0/15V,
RG= 1.8Ω
L
σ
1) =60nH,
C
σ
1) =40pF
Energy losses include
“tail” and diode
reverse recovery. - 1.26
mJ
Turn-on delay time td(on) - 20
Rise time tr - 19
Turn-off delay time td(off) - 274
Fall time tf - 27
ns
Turn-on energy Eon - 0.91
Turn-off energy Eoff - 0.70
Total switching energy Ets
Tj=150°C
VCC=400V,IC=30A,
VGE=0/15V,
RG= 11Ω
L
σ
1) =60nH,
C
σ
1) =40pF
Energy losses include
“tail” and diode
reverse recovery. - 1.61
mJ
1) Leakage inductance L
σ
and Stray capacity Cσ due to test circuit in Figure E.
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SGP30N60HS
SGW30N60HS
Power Semiconductors 4 Rev. 2.3 Sep 08
IC, COLLECTOR CURRENT
10Hz 100Hz 1kHz 10kHz 100kHz
0A
20A
40A
60A
80A
100A
TC=80°C
TC=110°C
IC, COLLECTOR CURRENT
1V 10V 100V 1000V
0.1A
1A
10A
100A tP=4µs
15µs
200µs
1ms
50µs
DC
f, SWITCHING FREQUENCY VCE, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function of
switching frequency
(Tj ≤ 150°C, D = 0.5, VCE = 400V,
VGE = 0/+15V, RG = 11Ω)
Figure 2. Safe operating area
(D = 0, TC = 25°C, Tj ≤ 150°C;
VGE=15V)
Ptot, POWER DISSIPATION
25°C 50°C 75°C 100°C 125°C
0W
50W
100W
150W
2
00W
IC, COLLECTOR CURRENT
25°C 75°C 125°C
0A
10A
20A
30A
40A
TC, CASE TEMPERATURE TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function of
case temperature
(Tj ≤ 150°C)
Figure 4. Collector current as a function of
case temperature
(VGE ≤ 15V, Tj ≤ 150°C)
Limited by Bond wire
Ic
Ic
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SGP30N60HS
SGW30N60HS
Power Semiconductors 5 Rev. 2.3 Sep 08
IC, COLLECTOR CURRENT
0V 2V 4V 6V
0A
10A
2
0A
3
0A
4
0A
5
0A
6
0A
7
0A
8
0A
5V
7V
9V
11V
13V
15V
VGE=20V
IC, COLLECTOR CURRENT
0V 2V 4V 6V
0A
10A
20A
30A
40A
50A
60A
70A
80A
5V
7V
9V
11V
15V
13V
VGE=20V
VCE, COLLECTOR-EMITTER VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
Figure 6. Typical output characteristic
(Tj = 150°C)
IC, COLLECTOR CURRENT
0V 2V 4V 6V 8V
0A
2
0A
4
0A
6
0A
8
0A
150°C
25°C
TJ=-55°C
VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE
-50°C 0°C 50°C 100°C 150°C
1,0V
1,5V
2,0V
2,5V
3,0V
3,5V
4,0V
4,5V
5,0V
5,5V
IC=60A
IC=30A
IC=15A
VGE, GATE-EMITTER VOLTAGE TJ, JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristic
(VCE=10V)
Figure 8. Typical collector-emitter
saturation voltage as a function of
junction temperature
(VGE = 15V)
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SGP30N60HS
SGW30N60HS
Power Semiconductors 6 Rev. 2.3 Sep 08
t, SWITCHING TIMES
0A 10A 20A 30A 40A 50A
10ns
1
00ns
tr
td(on)
tf
td(off)
t, SWITCHING TIMES
0Ω 5Ω 10Ω 15Ω 20Ω 25Ω
10 ns
100 ns
tf
tr
td(off)
td(on)
IC, COLLECTOR CURRENT RG, GATE RESISTOR
Figure 9. Typical switching times as a
function of collector current
(inductive load, TJ=150°C,
VCE=400V, VGE=0/15V, RG=11Ω,
Dynamic test circuit in Figure E)
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, TJ=150°C,
VCE=400V, VGE=0/15V, IC=30A,
Dynamic test circuit in Figure E)
t, SWITCHING TIMES
0°C 50°C 100°C 150°C
10ns
100ns
tf
tr
td(on)
td(off)
VGE(th), GATE-EMITT TRSHOLD VOLTAGE
-50°C 0°C 50°C 100°C 150°C
1,0V
1,5V
2,0V
2,5V
3,0V
3,5V
4,0V
4,5V
5,0V
5,5V
min.
typ.
max.
TJ, JUNCTION TEMPERATURE TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE=400V,
VGE=0/15V, IC=30A, RG=11Ω,
Dynamic test circuit in Figure E)
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(IC = 0.7mA)
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SGP30N60HS
SGW30N60HS
Power Semiconductors 7 Rev. 2.3 Sep 08
E, SWITCHING ENERGY LOSSES
0A 10A 20A 30A 40A 50A 60A
0
,0mJ
1,0mJ
2
,0mJ
3
,0mJ
4
,0mJ
5
,0mJ
Eoff
*) Eon and Ets include losses
due to diode recovery
Eon*
E, SWITCHING ENERGY LOSSES
0Ω 5Ω 10Ω 15Ω 20Ω 25Ω 30Ω
0,0 mJ
0,5 mJ
1,0 mJ
1,5 mJ
2,0 mJ
2,5 mJ
3,0 mJ
Eon*
*) Eon and Ets include losses
due to diode recovery
Ets*
Eoff
IC, COLLECTOR CURRENT RG, GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, TJ=150°C,
VCE=400V, VGE=0/15V, RG=11Ω,
Dynamic test circuit in Figure E)
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, TJ=150°C,
VCE=400V, VGE=0/15V, IC=30A,
Dynamic test circuit in Figure E)
E, SWITCHING ENERGY LOSSES
0°C 50°C 100°C 150°C
0
,0mJ
0
,5mJ
1,0mJ
1,5mJ
*) Eon and Ets include losses
due to diode recovery
Ets*
Eon*
Eoff
ZthJC, TRANSIENT THERMAL RESISTANCE
1µs 10µs 100µs 1ms 10ms 100ms
10-4K/W
10-3K/W
10-2K/W
10-1K/W
single pulse
0.01
0.02
0.05
0.1
0.2
D=0.5
TJ, JUNCTION TEMPERATURE tP, PULSE WIDTH
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load, VCE=400V,
VGE=0/15V, IC=30A, RG=11Ω,
Dynamic test circuit in Figure E)
Figure 16. IGBT transient thermal resistance
(D = tp / T)
C1=
τ
1/R1
R1R2
C2=
τ
2/R2
R,(K/W)
τ
, (s)
0.3681 0.0555
0.0938 1.26E-03
0.038 1.49E-04
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SGP30N60HS
SGW30N60HS
Power Semiconductors 8 Rev. 2.3 Sep 08
VGE, GATE-EMITTER VOLTAGE
0nC 50nC 100nC 150nC
0V
5V
10V
15V
480V120V
c, CAPACITANCE
0V 10V 20V
10pF
100pF
1nF
Crss
Coss
Ciss
QGE, GATE CHARGE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 17. Typical gate charge
(IC=30 A)
Figure 18. Typical capacitance as a function
of collector-emitter voltage
(VGE=0V, f = 1 MHz)
tSC, SHORT CIRCUIT WITHSTAND TIME
10V 11V 12V 13V 14V
0µs
5µs
10µs
15µs
IC(sc), short circuit COLLECTOR CURRENT
10V 12V 14V 16V 18V
0A
50A
100A
150A
200A
250A
300A
VGE, GATE-EMITETR VOLTAGE VGE, GATE-EMITETR VOLTAGE
Figure 19. Short circuit withstand time as a
function of gate-emitter voltage
(VCE=600V, start at TJ=25°C)
Figure 20. Typical short circuit collector
current as a function of gate-
emitter voltage
(VCE ≤ 600V, Tj ≤ 150°C)
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SGP30N60HS
SGW30N60HS
Power Semiconductors 9 Rev. 2.3 Sep 08
PG-TO220-3-1
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SGP30N60HS
SGW30N60HS
Power Semiconductors 10 Rev. 2.3 Sep 08
5.44
0.55
6.04
5.49
1.68
3.68
4.17
20.82
16.25
15.70
1.05
3.50
19.80
13.10
3
MIN
1.90
4.90
2.27
1.07
1.85
1.90
0.238
0.216
0.066
0.145
0.164
0.075
0.820
0.640
0.618
0.022
0.193
0.089
0.042
0.073
0.041
0.075
0.138
0.780
0.516
0.68
6.30
6.00
17.65
2.60
5.10
14.15
3.70
21.10
16.03
20.31
1.35
4.47
2.41
5.16
2.53
1.33
2.11
MAX
2.16
0.027
0.214
3
0.248
0.236
0.695
0.557
0.102
0.201
0.831
0.631
0.053
0.146
0.799
0.176
MIN MAX
0.095
0.203
0.099
0.052
0.083
0.085
0
7.5mm
55
0
17-12-2007
03
Z8B00003327
2.87
2.87
0.113
0.113
3.38
3.13
0.133
0.123
M
M
PG-TO247-3
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SGP30N60HS
SGW30N60HS
Power Semiconductors 11 Rev. 2.3 Sep 08
Figure A. Definition of switching times
Figure B. Definition of switching losses
p(t)
12 n
T(t)
j
1
1
τ
2
2
n
n
τ
T
C
rr
r
r
rr
Figure D. Thermal equivalent
circuit
Figure E. Dynamic test circuit
Leakage inductance L
σ
=60nH
and Stray capacity Cσ =40pF.
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SGP30N60HS
SGW30N60HS
Power Semiconductors 12 Rev. 2.3 Sep 08
Published by
Infineon Technologies AG
81726 Munich, Germany
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All Rights Reserved.
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