ZXGD3009DY
Datasheet Number: DS36913 Rev. 4 - 2
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ZXGD3009DY
40V 1A GATE DRIVER IN SOT363
Description
ZXGD3009DY is a high-speed, non-inverting single gate driver for
switching MOSFETs. It can transfer up to 1A peak source/sink current
into the gate for effective charging and discharging of the capacitive
load.
This gate driver ensures rapid switching of the MOSFET to minimize
power losses and distortion in high current switching applications. It
can typically drive 500mA into the low gate impedance with just 10mA
input from a controller. The turn-on and turn-off switching behavior of
the MOSFET can be individually tailored to suit an application. In
particular, by defining the switching characteristics appropriately, EMI
and cross conduction problems can be reduced.
Applications
Power MOSFET Gate Driving in:
Power Supplies
DC-DC Converters
Amplifier Output Stages
Features
High-Gain Buffer with Typically 500mA Output from 10mA Input
Emitter-Follower that is Rugged to Latch-Up/Shoot-Through
Issues
Wide Supply Voltage to Minimize On-Losses
Separate Source and Sink Outputs for Independent Control of
MOSFET Turn-On and Turn-Off Times
Optimized Pin-Out to Simplify PCB Layout and Reduce
Parasitic Trace Inductances
Near-Zero Quiescent Supply Current
Qualified to AEC-Q101 Standards for High Reliability
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: SOT363
Case material: Molded Plastic, ―Green‖ Molding Compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads.
Solderable per MIL-STD-202, Method 208
Weight: 0.018 grams (Approximate)
Ordering Information (Note 4)
Part Number
Compliance
Reel Size (inches)
Tape Width (mm)
ZXGD3009DYTA
AEC-Q101
7
8
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
Pin Name
Pin Function
VCC
Supply Voltage High
IN
Driver Input
VEE
Supply Voltage Low
SOURCE
Source Current Output *
SINK
Sink Current Output *
Top View
Top View
Pin-Out
V
CC
IN
V
EE
SOURCE
Not Internally
Connected
SINK
Internal Device
Schematic
* Typically connect SOURCE & SINK
together
3009 = Product Type Marking Code
SOT363
3009
ZXGD3009DY
Datasheet Number: DS36913 Rev. 4 - 2
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ZXGD3009DY
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Supply Voltage, with Respect to VEE
VCC
40
V
Input Voltage, with Respect to VEE
VIN
40
V
Output Difference Voltage (Source – Sink)
V(source-sink)
±7
V
Peak Pulsed Output Current (Source and Sink)
IOM
±2
A
Peak Pulsed Input Current
IIM
±1
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation
(Notes 5 & 7)
PD
320
mW
(Notes 6 & 7)
277
Thermal Resistance, Junction to Ambient
(Notes 5 & 7)
RθJA
391
°C/W
(Notes 6 & 7)
450
Thermal Resistance, Junction to Lead (Note 8)
RθJL
350
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
ESD Ratings (Note 9)
Characteristics
Symbols
Value
Unit
JEDEC Class
Electrostatic Discharge – Human Body Model
ESD HBM
4,000
V
3A
Electrostatic Discharge – Machine Model
ESD MM
400
V
C
Notes: 5. For a device mounted with pin 1 (VCC) and pin 3 (VEE) on 25mm x 25mm 1oz copper that is on a single-sided 1.6mm FR-4 PCB; device is measured
under still air conditions whilst operating in steady-state. The heatsink is split in half with pin 1 (VCC) and pin 3 (VEE) connected separately to each half.
6. Same as Note 5, except the device is mounted on minimum recommended pad layout.
7. For device with two active die running at equal power.
8. Thermal resistance from junction to solder-point at the end of each lead on pin 1 (VCC) and pin 3 (VEE).
9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
ZXGD3009DY
Datasheet Number: DS36913 Rev. 4 - 2
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ZXGD3009DY
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Output Voltage, High
VOH
VCC - 0.8
VCC - 0.4
—
V
I(source) = 1µA, VIN = VCC
Output Voltage, Low
VOL
—
VEE + 0.2
VEE + 0.5
I(sink) = 1µA, VIN = VEE
Supply Breakdown Voltage
BVCC
40
—
—
V
IQ = 100µA, VIN = VCC
40
—
—
IQ = 100µA, VIN = VEE = 0V
Quiescent Supply Current
IQ
—
—
20
nA
VCC = 32V, VIN = VCC
—
—
20
VCC= 32V, VIN = VEE = 0V
Peak Pulsed Source Current
I(source)M
—
0.98
—
A
IIN= 10mA, VCC = 5V, VOUT= 0V
Peak Pulsed Sink Current
I(sink)M
—
0.78
—
IIN=-10mA, VEE = 0V, VOUT= 5V
Peak Pulsed Source Current
I(source)M
—
1.58
—
A
IIN= 50mA, VCC = 5V, VOUT= 0V
Peak Pulsed Sink Current
I(sink)M
—
1.38
—
IIN=-50mA, VEE = 0V, VOUT= 5V
Peak Pulsed Source Current
with Varying Input Resistances
I(source)M
—
0.74
0.175
0.019
—
A
RIN = 100Ω
RIN = 1kΩ
RIN = 10kΩ
VCC = 15V, VEE = 0V
VIN = 15V
CL =1nF, RL = 0.18Ω
RSOURCE = 0Ω, RSINK = 0Ω
Peak Pulsed Sink Current
with Varying Input Resistances
I(sink)M
—
1.05
0.22
0.025
—
A
RIN = 100Ω
RIN = 1kΩ
RIN = 10kΩ
VCC = 15V, VEE = 0V
VIN = 15V
CL =1nF, RL = 0.18Ω
RSOURCE = 0Ω, RSINK = 0Ω
Switching Times
with Low Input Resistance
td(rise)
tr
td(fall)
tf
—
3.8
15
4
15
—
ns
VCC = 12V, VEE = 0V
VIN = 0 to 10V
RIN = 25Ω
CL = 1nF, RL = 0.18Ω
RSOURCE = 0Ω, RSINK = 0Ω
Switching Times
with Low Load Capacitance CL = 1nF
td(rise)
tr
td(fall)
tf
—
18
36
16
40
—
ns
VCC = 15V, VEE = 0V
VIN = 0 to 15V
RIN = 1kΩ
CL = 1nF, RL = 0.18Ω
RSOURCE = 0Ω, RSINK = 0Ω
Switching Times
with High Load Capacitance CL = 10nF
td(rise)
tr
td(fall)
tf
—
47
210
39
240
—
ns
VCC = 15V, VEE = 0V
VIN = 0 to 15V
RIN = 1kΩ
CL = 10nF, RL = 0.18Ω
RSOURCE = 0Ω, RSINK = 0Ω
ZXGD3009DY
Datasheet Number: DS36913 Rev. 4 - 2
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ZXGD3009DY
Switching Test Circuit and Timing Diagram
Typical Application Circuit
10%
90%
90%
tr
td(rise)
td(fall)
tf
VIN
VOUT
VCC
VEE
VCC
IN
ZXGD3009
SOURCE
SINK
RSOURCE
RSINK
RIN
50Ω
50Ω
RL
CL
VIN
VOUT
10%
90%
10%
V
ZXGD3009DY
Datasheet Number: DS36913 Rev. 4 - 2
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ZXGD3009DY
Typical Switching Characteristics (@TA = +25°C, unless otherwise specified.)
ZXGD3009DY
Datasheet Number: DS36913 Rev. 4 - 2
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ZXGD3009DY
Typical Switching Characteristics (@TA = +25°C, unless otherwise specified.)
0.1 1 10
1
10
100
1000
0.1 1 10
1
10
100
1000
100 1k 10k
0.01
0.1
1
10
100 1k 10k
0.01
0.1
1
10
0.1 1 10
10
100
1000
0.1 1 10
10
100
1000
RIN=100
RIN=1k
RIN=10k
Turn-On Delay Time
TA = 25oC
VCC= 15V
VIN = 15V
RL = 0.18
td(rise) (ns)
CL Load Capacitance (nF)
RIN=100
RIN=1k
RIN=10k
Turn-Off Delay Time
TA = 25oC
VCC= 15V
VIN = 15V
RL = 0.18
td(fall) (ns)
CL Load Capacitance (nF)
CL=10nF
CL=0.1nF
CL=1nF
Source Current vs. Input Resistance
TA = 25oC
VCC= 15V
VIN = 15V
RL = 0.18
Peak Source Current (A)
RIN Input Resistance ()
CL=1nF
CL=10nF
CL=0.1nF
TA = 25oC
VCC= 15V
VIN = 15V
RL = 0.18
Sink Current vs. Input Resistance
Peak Sink Current (A)
RIN Input Resistance ()
RIN=100
RIN=1k
RIN=10k
TA = 25oC
VCC= 15V
VIN = 15V
RL = 0.18
Turn-On Rise Time
tr (ns)
CL Load Capacitance (nF)
RIN=1k
RIN=100
RIN=10k
TA = 25oC
VCC= 15V
VIN = 15V
RL = 0.18
Turn-Off Fall Time
CL Load Capacitance (nF)
tf (ns)
ZXGD3009DY
Datasheet Number: DS36913 Rev. 4 - 2
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ZXGD3009DY
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT363
e
D
L
E1
b
E
F
A2
A1
ca
SOT363
Dim
Min
Max
Typ
A1
0.00
0.10
0.05
A2
0.90
1.00
0.95
b
0.10
0.30
0.25
c
0.10
0.22
0.11
D
1.80
2.20
2.15
E
2.00
2.20
2.10
E1
1.15
1.35
1.30
e
0.650 BSC
F
0.40
0.45
0.425
L
0.25
0.40
0.30
a
0°
8°
--
All Dimensions in mm
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT363
Y1 G
Y
X
C
Dimensions
Value
(in mm)
C
0.650
G
1.300
X
0.420
Y
0.600
Y1
2.500
ZXGD3009DY
Datasheet Number: DS36913 Rev. 4 - 2
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ZXGD3009DY
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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