SQ4153EY
www.vishay.com Vishay Siliconix
S16-0100, Rev. B, 25-Jan-16 2Document Number: 66897
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Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0, ID = -250 μA -12 - - V
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250 μA -0.4 -0.6 -0.9
Gate-Source Leakage IGSS V
DS = 0 V, VGS = ± 8 V - - ± 100 nA
Zero Gate Voltage Drain Current IDSS
VGS = 0 V VDS = -12 V - - -1
μA VGS = 0 V VDS = -12 V, TJ = 125 °C - - -50
VGS = 0 V VDS = -12 V, TJ = 175 °C - - -150
On-State Drain Current a I
D(on) V
GS = -4.5 V VDS -5 V -30 - - A
Drain-Source On-State Resistance a R
DS(on)
VGS = -4.5 V ID = -14 A - 0.00510 0.00832
VGS = -4.5 V ID = -14 A, TJ = 125 °C - - 0.00900
VGS = -4.5 V ID = -14 A, TJ = 175 °C - - 0.01100
VGS = -2.5 V ID = -13 A - 0.00650 0.01000
VGS = -1.8 V ID = -12 A - 0.00940 0.01430
Forward Transconductance a gfs VDS = -6 V, ID = -10.5 A - 54 - S
Dynamic b
Input Capacitance Ciss
VGS = 0 V VDS = -6 V, f = 1 MHz
- 7500 11 000
pF Output Capacitance Coss - 2800 4200
Reverse Transfer Capacitance Crss - 2400 3600
Total Gate Charge c Qg
VGS = -4.5 V VDS = -6 V, ID = -10.5 A
- 101 151
nC Gate-Source Charge c Qgs -15-
Gate-Drain Charge c Qgd -45-
Gate Resistance Rgf = 1 MHz 1.1 2.2 3.2
Turn-On Delay Time c td(on)
VDD = -6 V, RL = 15
ID -10.5 A, VGEN = -4.5 V, Rg = 6
-3142
ns
Rise Time ctr - 168 224
Turn-Off Delay Time c td(off) - 310 412
Fall Time c tf - 283 376
Source-Drain Diode Ratings and Characteristics b
Pulsed Current a ISM - - -100 A
Forward Voltage VSD IF = -10.5 A, VGS = 0 - -0.8 -1.2 V