MB39A134PFT-XXXE1 - Fujitsu Limited - Datasheet.Live

FUJITSU MICROELECTRONICS

DATA SHEET

Copyright©2008 FUJITSU MICROELECTRONICS LIMITED All rights reserved

2008.9

ASSP for Power Management Applications

(Rechargeable Battery)

DC/DC converter IC

for Charging Li-ion battery

MB39A134

■DESCRIPTION

The MB39A134 is a DC/DC converter IC for charging Li-ion battery, which is suitable for down conversion, and

uses pulse width modulation (PWM) for controlling the charge voltage and current independently.

MB39A134 has a AC adapter detection comparator independent of the DC/DC converter controller, and can

control the source of power supply to a system. It supports a wide input voltage range, enables low current

consumption in standby mode, and can control the charge voltage and charge current with high precision, which

is perfect for the built-in Li-ion battery charger used in devices such as notebook PC.

■FEATURES

• Support 2, 3 and 4 Cell Battery Pack

• Built-in two constant current control loops

• Built-in AC adapter detection function (ACOK pin)

• Charge voltage accuracy : ±0.7% (Ta = −10 °C to +85 °C)

• Built-in charging voltage control without external setting resistor (4.20 V/Cell or 4.10 V/Cell)

Adjustable to charge voltage with external resistor

• Built-in two high accurate current detection amplifiers (±1%) (At input voltage difference 100 mV)

(±5%) (At input voltage difference 20 mV)

Input offset voltage : 0 mV (Current Amp1)

: +3 mV (Current Amp2)

• Built-in Charging Current Control without external resistor (RS = 20 mΩ : 2.85 A)

Adjustable charging current with external resistor

• Setting of switching frequency using an external resistor

(Frequency setting capacitor integrated) : 100 kHz to 2 MHz

• Built-in under voltage lockout protection

• In standby mode (Icc = 6 µA Typ) , only AC adapter detection function is operated

• Built-in VH regulator for reducing Qg loss of P-ch MOS FET

• Package : TSSOP-24

■APPLICATIONS

• Built-in charger for Notebook PC

• Handy terminal device etc.

DS04-27264-2E

MB39A134

2DS04-27264-2E

■PIN ASSIGNMENT

(TOP VIEW)

(FPT−24P−M08)

OUTC1

−INC1

ADJ1

COMP1

ACOK

VREF

ACIN

COMP2

ADJ2

OUTC2

CELLS

BATT

GND

+INC1

CVM

VCC

OUT

VH

VIN

RT

ADJ3

COMP3

CTL

+INC2

1

2

3

4

5

6

7

8

9

10

11

12

24

23

22

21

20

19

18

17

16

15

14

13

MB39A134

DS04-27264-2E 3

■PIN DESCRIPTIONS

Pin No. Pin Name I/O Description

1 -INC1 I Current detection amplifier (Current Amp1) inverted input pin.

2 OUTC1 O Current detection amplifier (Current Amp1) output pin.

3 ADJ1 I Error amplifier (Error Amp1) non-inverted input pin.

4 COMP1 O Error amplifier (Error Amp1) output pin.

5ACOKO

AC adapter voltage detection block (AC Comp.) output pin.

ACIN = H : ACOK = Lo-Z, ACIN = L : ACOK = Hi-Z

6 VREF O Reference voltage output pin.

7 ACIN I AC adapter voltage detection block (AC Comp.) input pin.

8 COMP2 O Error amplifier (Error Amp2) output pin.

9ADJ2I

Charge current control block setting input pin.

ADJ2 pin “GND to 4.4 V” : Charge current control block output = ADJ2 pin

voltage

ADJ2 pin “4.6 V to VREF” : Charge current control block output = 1.5 V

10 OUTC2 O Current detection amplifier (Current Amp2) output pin.

11 CELLS I Charge voltage setting switch pin (2 or 3 or 4 Cells).

CELLS = VREF: 4 Cells, CELLS = GND: 3 Cells, CELLS = OPEN: 2 Cells

12 BATT I Current detection amplifier (Current Amp2) inverted input pin.

Battery voltage input pin.

13 +INC2 I Current detection amplifier (Current Amp2) non-inverted input pin.

14 CTL I

Power supply control pin.

Setting the CTL pin at “H” level places the DC/DC converter IC in the operating

mode.

Setting the CTL pin at “L” level places the DC/DC converter IC in the standby

mode.

15 COMP3 O Error amplifier (Error Amp3) output pin.

16 ADJ3 I

Charge voltage control block setting input pin.

ADJ3 pin “GND to 0.2 V” : Charge voltage setting 4.10 V/Cell

ADJ3 pin “0.4 V to 4.4 V” : Charge voltage setting 2 × VADJ3 pin voltage/Cell

ADJ3 pin “4.6 V to VREF” : Charge voltage setting 4.20 V/Cell

17 RT ⎯Triangular wAVe oscillation frequency setting resistor connection pin.

18 VIN ⎯Power supply pin for ACOK function block.

19 VH O Power supply pin for FET drive circuit (VH = VCC − 6 V)

20 OUT O External FET gate drive pin.

21 VCC ⎯Power supply pin for reference voltage , control circuit, and output circuit.

22 CVM O Constant voltage control state detection block (CV Comp.) output pin.

23 GND ⎯Ground pin.

24 +INC1 I Current detection amplifier (Current Amp1) non-inverted input pin.

MB39A134

4DS04-27264-2E

■BLOCK DIAGRAM

+

+

−

+

−

+

−

+

+

+

−

+

−

+

−

+

V

IN

OUTC1

OUTC2

-INC1

+INC1

+INC2

ADJ1

ADJ2

BATT

VIN

CELLS COMP2

COMP1 COMP3 RT VREF GND

CTL

VH

Battery

OUT

VCC

V

O

2.85 A

R

S

20 mΩ

TO SYSTEM

LOAD

<AC

Comp.>

<CV Comp.>

<Error Amp1>

<Current Amp1>

<Current Amp2> <Error Amp2>

<Error Amp3>

<PWM Comp.>

<OSC>

<VR1> <REF> <CTL>

Bias

Voltage

<VH>

VCC

UVLO

VREF

UVLO

VCC VCC

ACOKACINCVM

3 mV

Charge Current

Control

VO

REFIN

Control

ADJ3

VCC-6 V

Drive

1.26 V

VR1

5.0 V ON/OFF

VREF

Io

C

T

−2.5 V

−1.5 V

VREF :

4.20 V/Cell

OPEN : 2Cells

GND : 3Cells

VREF : 4Cells

GND :

4.10 V/Cell

( 24-pin )

18

2

24

1

3

10

13

12

A

B

9

16

11 4 8 15 17 6

14

19

20 A B

21

5722

23

✕

25

✕

25

MB39A134

DS04-27264-2E 5

■ABSOLUTE MAXIMUM RATINGS

*1 : See the diagram of “■ TYPICAL CHARACTERISTICS . Maximum Power Dissipation vs. Operating Ambient

Temperature”, for the package power dissipation of Ta from + 25 °C to + 85 °C.

*2 : When IC is mounted on a 10x10 cm two-layer square epoxy board.

WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current,

temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.

Parameter Symbol Condition Rating Unit

Min Max

Power supply voltage VvCC

VCC, VIN pin − 0.3 + 28 V

VCC, VIN pin, t ≤ 10 µs− 0.3 + 32 V

Output current IOUT

OUT pin − 60 + 60 mA

OUT pin

Duty ≤ 5% (t = 1/fosc × Duty) − 700 + 700 mA

CLT pin input voltage VCTL CTL pin − 0.3 + 28 V

Input voltage VINE ADJ1, ADJ2, ADJ3, CELLS, ACIN

pin − 0.3 VVREF + 0.3 V

VINC -INC1, +INC1, BATT, +INC2 pin − 0.3 + 28 V

Power dissipation PD

Ta ≤ + 25 °C⎯1282*1,*2mW

Ta = + 85 °C⎯512*1,*2mW

Storage temperature TSTG ⎯− 55 + 125 °C

MB39A134

6DS04-27264-2E

■RECOMMENDED OPERATING CONDITIONS

WARNING: The recommended operating conditions are required in order to ensure the normal operation of the

semiconductor device. All of the device’s electrical characteristics are warranted when the device is

operated within these ranges.

Always use semiconductor devices within their recommended operating condition ranges. Operation

outside these ranges may adversely affect reliability and could result in device failure.

No warranty is made with respect to uses, operating conditions, or combinations not represented on

the data sheet. Users considering application outside the listed conditions are advised to contact their

representatives beforehand.

Parameter Symbol Condition Value Unit

Min Typ Max

Power supply voltage VVCC VCC, VIN pin 8 ⎯25 V

Reference voltage output current IVREF ⎯−1⎯0mA

VH pin output current IVH ⎯0⎯30 mA

Input voltage

VINE

ADJ1 pin 0 ⎯VVREF − 1.5 V

ADJ2 pin

(internal reference voltage

setting)

4.6 ⎯VVREF V

ADJ2 pin

(external voltage setting) 0⎯4.4 V

ADJ3 pin

(internal reference voltage

setting)

0

⎯

0.2 V

4.6 VVREF V

ADJ3 pin

(external voltage setting) 0.4 ⎯4.4 V

CELLS pin 0 ⎯VVREF V

VINC +INC1, +INC2, -INC1, BATT

pin 0⎯VVCC V

ACIN pin input voltage VACIN ⎯0⎯5V

ACOK pin output voltage VACOK ⎯0⎯25 V

ACOK pin output current IACOK ⎯0⎯1mA

CTL pin input voltage VCTL ⎯0⎯25 V

Output current IOUT

OUT pin −45 ⎯ + 45 mA

OUT pin

Duty ≤ 5% (t = 1 / fosc × Duty) −600 ⎯ + 600 mA

Switching frequency fOSC ⎯100 500 2000 kHz

Timing resistor RRT RT pin 8.2 33 180 kΩ

VH pin capacitor CVH ⎯⎯0.1 1.0 µF

Reference voltage output capacitor CVREF VREF pin ⎯0.1 1.0 µF

Operating ambient temperature Ta ⎯−30 + 25 + 85 °C

MB39A134

DS04-27264-2E 7

■ELECTRICAL CHARACTERISTICS

(Ta = +25 °C, VCC pin = 19 V, VREF pin = 0 mA)

(Continued)

Parameter Symbol Pin

No. Condition Value Unit

Min Typ Max

Reference

Voltage Block

[REF]

Threshold

voltage

VVREF1 6⎯4.963 5.000 5.037 V

VVREF2 6Ta = −10 °C to +85 °C 4.950 5.000 5.050 V

Input stability VREF

Line 6VCC pin = 8 V to 25 V ⎯310mV

Load stability VREF

Load 6VREF pin = 0 mA to −1 mA ⎯110mV

Short-circuit

output

current

Ios 6 VREF pin = 1 V −25 −12 −6mA

Triangular

Wave Oscillator

Block

[OSC]

Switching

frequency fOSC 20 RT pin = 33 kΩ450 500 550 kHz

Frequency

temperature

variation

df/fdT 20 Ta = −30 °C to +85 °C⎯1* ⎯%

Error Amplifier

Block

[Error Amp1]

Input offset

voltage VIO 2, 3 COMP1 pin = 2 V ⎯15mV

Input bias

voltage IADJ1 3 ADJ1 pin = 0 V −100 ⎯⎯nA

Transcon-

ductance Gm 15 ⎯⎯ 20* ⎯µA/V

Error Amplifier

Block

[Error Amp2]

Threshold

voltage VTH1 10 ADJ2 pin = VREF pin ⎯1.5* ⎯V

Transcon-

ductance Gm 15 ⎯⎯ 20* ⎯µA/V

Error Amplifier

Block

[Error Amp3]

Threshold

voltage

accuracy

VTH1 12

COMP3 pin = 2 V, Ta = +25 °C

ADJ3 pin = VREF pin

(4.20 V/Cell setting)

−0.5 0 + 0.5 %

VTH2 12

COMP3 pin = 2 V,

Ta = −10 °C to +85 °C,

ADJ3 pin = VREF pin

(4.20 V/Cell setting)

−0.7 0 + 0.7 %

VTH3 12

COMP3 pin = 2 V, Ta = +25 °C

ADJ3 pin = GND,

(4.10 V/Cell setting)

−0.6 0 + 0.6 %

VTH4 12

COMP3 pin = 2 V,

Ta = − 10 °C to +85 °C

ADJ3 pin = GND,

(4.10 V/Cell setting)

−0.8 0 + 0.8 %

MB39A134

8DS04-27264-2E

(Ta = +25 °C, VCC pin = 19 V, VREF pin = 0 mA)

(Continued)

Parameter Symbol Pin

No. Condition Value Unit

Min Typ Max

Error Amplifier

Block

[Error Amp3]

Input current IBATTH1 12 ADJ3 pin = CELLS pin = VREF pin

BATT pin = 16.8 V ⎯25.2 38 µA

IBATTL 12 VCC pin = 0 V, BATT pin = 16.8 V ⎯01µA

Transconduc-

tance Gm 15 ⎯⎯ 30* ⎯µA/V

Current

Detection

Amplifier Block

[Current Amp1,

Current Amp2]

Input current

I+INCH 13, 24 +INC1 pin = +INC2 pin = 3 V to

VCC pin, ∆Vin = −100 mV ⎯20 30 µA

I−INCH 1+INC1 pin = 3 V to VCC pin,

∆Vin = −100 mV ⎯0.1 0.2 µA

I+INCL 13, 24 +INC1 pin = +INC2 pin = 0.1 V,

∆Vin = −100 mV −225 −150 ⎯µA

I−INCL 1+INC1 pin = +INC2 pin = 0.1 V,

∆Vin = −100 mV −255 −170 ⎯µA

Input offset

voltage

VOFF1 2+INC1 pin = 3 V to VCC pin −10 1mV

VOFF2 10 +INC2 pin = 3 V to VCC pin 2 3 4 mV

VOFF3 10 +INC2 pin = 0 V to 3 V 1 3 5 mV

Common

mode input

voltage range

VCM 2, 10 ⎯0⎯Vvcc V

Voltage gain AV2, 10 +INC1 pin = +INC2 pin = 3 V to

VCC pin, ∆Vin = −100 mV 24.5 25.0 25.5 V/V

Frequency

band width BW 2, 10 AV = 0 dB ⎯ 2* ⎯MHz

Output voltage

VOUTCH1 2⎯4.7 4.9 ⎯V

VOUTCH2 10 ⎯4.5 4.7 ⎯V

VOUTCL 2, 10 ⎯50 75 100 mV

Output source

current ISOURCE 2, 10 OUTC1 pin = OUTC2 pin = 2 V ⎯−2−1mA

Output sink

current ISINK 2, 10 OUTC1 pin = OUTC2 pin = 2 V 150 300 ⎯µA

PWM Comp.

Block

[PWM Comp.]

Threshold

voltage

VTL 20 Duty cycle = 0% 1.4 1.5 ⎯V

VTH 20 Duty cycle = 100% ⎯2.5 2.6 V

MB39A134

DS04-27264-2E 9

(Ta = +25 °C, VCC pin = 19 V, VREF pin = 0 mA)

(Continued)

Parameter Symbol Pin

No. Condition Value Unit

Min. Typ. Max.

Output Block

[OUT]

Output source

current ISOURCE 20 OUT pin = 13 V, Duty ≤ 5%

(t = 1/fosc × Duty) ⎯−400* ⎯mA

Output sink

current ISINK 20 OUT pin = 19V, Duty ≤ 5%

(t = 1/fosc × Duty) ⎯400* ⎯mA

Output ON

resistance

ROH 20 OUT pin = −45 mA ⎯6.5 9.8 Ω

ROL 20 OUT pin = 45 mA ⎯5.0 7.5 Ω

Rise time tr1 20 OUT pin = 3300 pF ⎯50* ⎯ns

Fall time tf1 20 OUT pin = 3300 pF ⎯50* ⎯ns

Control Block

[CTL]

CTL input

voltage

VON 14 IC operation mode 2 ⎯25 V

VOFF 14 IC standby mode 0 ⎯0.8 V

Input current ICTLH 14 CTL pin = 5 V ⎯100 150 µA

ICTLL 14 CTL pin = 0 V ⎯01µA

Bias Voltage

Block

[VH]

Output

voltage VH19 VCC pin = 8 V to 25 V,

VH pin = 0 to 30 mA

VVCC−

6.5

VVCC−

6.0

VVCC−

5.5 V

Under Voltage

Lockout

Protection

Circuit Block

[UVLO]

Threshold

voltage

VTLH 21 VCC pin = 6.0 6.2 6.4 V

VTHL 21 VCC pin = 5.0 5.2 5.4 V

Hysteresis width VH21 VCC pin ⎯ 1.0* ⎯V

Threshold

voltage

VTLH 6VREF pin = 2.6 2.8 3.0 V

VTHL 6VREF pin = 2.4 2.6 2.8 V

Hysteresis width VH6VREF pin ⎯0.2 ⎯V

Over

Temperature

Detection

Detection

temperature TTH 20 ⎯⎯ + 150 ⎯ °C

Release

temperature TTL 20 ⎯⎯ + 125 ⎯ °C

AC Adapter

Voltage

Detection Block

[AC Comp.]

Threshold

voltage

VTLH 7⎯1.245 1.270 1.295 V

VTHL 7⎯1.215 1.250 1.285 V

Hysteresis width VH7⎯⎯20 ⎯mV

ACOK

pin

output leak

current

ILEAK 5ACOK pin = 25 V ⎯01µA

ACOK pin

output “L”

level voltage

VACOKL 5ACOK pin = 1 mA ⎯0.9 1.1 V

Current

consumption

IVINL 18 VIN pin = 19 V,

ACIN pin = 0 V ⎯01µA

IVINH 18 VIN pin = 19 V,

ACIN pin = 5 V ⎯610µA

MB39A134

10 DS04-27264-2E

(Continued) (Ta = +25 °C, VCC pin = 19 V, VREF pin = 0 mA)

* : This parameter isn't be specified. This should be used as a reference to support designing the circuits.

Parameter Symbol Pin No. Condition Value Unit

Min. Typ. Max.

Charge Voltage

Control Block

[VO REFIN

Control]

Input voltage

VH16 At 4.20 V/Cell 4.6 ⎯VVREF V

VEXT 16 At external setting 0.4 ⎯4.4 V

VL16 At 4.10 V/Cell 0 ⎯0.2 V

Threshold

voltage

VTL 16 ⎯0.21 0.3 0.39 V

VTH 16 ⎯4.41 4.5 4.59 V

Input current IIN 16 ADJ3 pin ⎯01µA

Input voltage

VH11 At 4 Cells VVREF −

0.4 ⎯VVREF V

VM11 At 2 Cells 2.4 ⎯2.6 V

VL11 At 3 Cells 0 ⎯0.3 V

Input current IINL 11 CELLS = 0 V −8.3 −5⎯µA

IINH 11 CELLS = IVREF ⎯58.3µA

Charge Current

Control Block

[Charge Current

Control]

Input voltage VH9 At normal charge 4.6 ⎯VVREF V

VEXT 9 At external setting 0 ⎯4.4 V

Threshold

voltage VTH 9⎯4.41 4.50 4.59 V

Input current IIN 9ADJ2 pin ⎯01µA

General

Standby

current

ICCS1 18

VCC pin = 0 V,

CTL pin = 0 V,

ACIN pin = 5 V,

VIN pin = 19 V

⎯610µA

ICCS2 21

VIN pin = 0 V,

CTL pin = 0 V,

VCC pin = 19 V

⎯01µA

Power supply

current ICC 21 CTL pin = 5 V ⎯2.7 4.0 mA

MB39A134

DS04-27264-2E 11

■TYPICAL CHARACTERISTICS

(Continued)

Power supply current vs.

Power supply voltage

CTL pin input current, Reference voltage

vs. CTL pin input voltage

Power supply current Icc (mA)

CTL pin input current ICTL (µA)

Reference voltage VVREF (V)

Power supply voltage VVCC (V) CTL pin input voltage VCTL (V)

Reference voltage vs.

Power supply voltage

Reference voltage vs.

Load current

Reference voltage VVREF (V)

Reference voltage VVREF (V)

Power supply voltage VVCC (V) Load current IVREF (mA)

Reference voltage vs.

Operating ambient temperature

Triangular wave oscillation frequency vs.

Power supply voltage

Reference voltage VVREF (V)

Triangular wave oscillation

frequency fosc (kHz)

Operating ambient temperature Ta ( °C) Power supply voltage VVCC (V)

0

1

2

3

4

5

0 5 10 15 20 25

Ta = +25 °C

VCTL = 5 V

0

100

200

300

400

500

600

700

800

900

1000

0 5 10 15 20 25

0

1

2

3

4

5

6

7

8

9

10

Ta = +25 °C

V

VCC

= 19 V

I

VREF

= 0 mA

V

VREF

I

CTL

0

1

2

3

4

5

6

0 5 10 15 20 25

Ta = +25 °C

VCTL

= 5 V

I

VREF

= 0 mA

0

1

2

3

4

5

6

0 5 10 15 20 25

Ta = +25 °C

V

VCC

= 19 V

VCTL

= 5 V

4.92

4.94

4.96

4.98

5.00

5.02

5.04

5.06

5.08

−40 −20 0 +20 +40 +60 +80 +100

V

VCC

= 19 V

VCTL

= 5 V

I

VREF

= 0 mA

450

460

470

480

490

500

510

520

530

540

550

0 5 10 15 20 25

Ta = +25 °C

VCTL

= 5 V

RT = 33 kΩ

MB39A134

12 DS04-27264-2E

(Continued)

Triangular wave oscillation frequency vs.

Operating ambient temperature

Triangular wave oscillation frequency vs.

Timing resistor

Triangular wave oscillation

frequency fosc (kHz)

Triangular wave oscillation

frequency fosc (kHz)

Operating ambient temperature Ta ( °C) Timing resistor RT (kΩ)

Error amplifier threshold voltage vs.

Operating ambient temperature

Error amplifier threshold voltage vs.

Operating ambient temperature

Error amplifier threshold voltage

VTH (V)

Error amplifier threshold voltage

VTH (V)

Operating ambient temperature Ta ( °C) Operating ambient temperature Ta ( °C)

Error amplifier threshold voltage vs.

Operating ambient temperature

Permissible dissipation vs.

Operating ambient temperature

Error amplifier threshold voltage

VTH (V)

Permissible dissipation PD (mW)

Operating ambient temperature Ta ( °C) Operating ambient temperature Ta ( °C)

450

460

470

480

490

500

510

520

530

540

550

−40 −20 0 +20 +40 +60 +80 +100

V

VCC

= 19 V

VCTL

= 5 V

RT = 33 kΩ

10

100

1000

10000

1 10 100 1000

Ta = +25 °C

V

VCC

= 19 V

VCTL

= 5 V

8.300

8.325

8.350

8.375

8.400

8.425

8.450

8.475

8.500

−40 −20 0

+20 +40 +60 +80 +100

V

VCC

= 19 V

VCTL

= 5 V

V

CELLS

= OPEN

12.500

12.525

12.550

12.575

12.600

12.625

12.650

12.675

12.700

−40 −20 0

+20 +40 +60 +80 +100

V

VCC

= 19 V

VCTL

= 5 V

V

CELLS

= GND

16.700

16.725

16.750

16.775

16.800

16.825

16.850

16.875

16.900

-40 -20 0

+20 +40 +60 +80 +100

V

VCC

= 19 V

VCTL

= 5 V

V

CELLS

= 5 V

0

200

400

600

800

1000

1200

1400

−40 −20 0 +20 +40 +60 +80 +100

1282

MB39A134

DS04-27264-2E 13

■FUNCTIONAL DESCRIPTION

MB39A134 is a DC/DC converter which uses pulse width modulation (PWM) for charging Li-ion battery and

controls the charge voltage and current when charging the battery. It includes the charge control function for the

battery and the AC adapter voltage detection function to stably supply the voltage from the AC adapter and the

battery to the system.

• When controlling the charge voltage (constant voltage mode), the voltage entered in ADJ3 pin and CELLS pin

can be used to set an arbitrary voltage. The error amplifier (Error Amp3) compares BATT pin voltage with the

internal reference voltage to generate the PWM control signal for generating an arbitrary charge voltage.

• When controlling the charge current (constant current mode) , the current detection amplifier (Current Amp2)

amplifies the voltage drop generated between both ends of the charge current sense resistance (RS) to 25

times and outputs it through OUTC2 pin. The error amplifier (Error Amp2) compares the output voltage from

the current detection amplifier (Current Amp2) with the voltage set at ADJ2 pin to generate the PWM control

signal for executing the constant current charge.

• When controlling the AC adapter power, the current detection amplifier (Current Amp1) amplifies the difference

between -INC1 pin voltage and +INC1 pin voltage (VVREF) to 25 times and outputs it through OUTC1 pin when

the output voltage of the AC adapter drops. The error amplifier (Error Amp1) compares the output voltage from

the current detection amplifier (Current Amp1) with ADJ1 pin voltage to generate the PWM control signal for

controlling the charge current so that AC adapter power can be kept constant.

The triangular wave voltage generated from the triangular wave oscillator is compared with the lowest potential

of the output voltages from the error amplifier (Error Amp1, Error Amp2, and Error Amp3) and when the former

is lower than the latter, the high side switching FET is set on.

In addition, AC Comp detects installation/removal of the AC adapter and its information is generated through

ACOK pin.

MB39A134

14 DS04-27264-2E

1. DC/DC Converter Block

(1) Reference voltage block (REF)

The reference voltage circuit (REF) uses the voltage supplied from the VCC pin (pin 21) to generate stable

voltage (Typ. 5.0 V) that has undergone temperature compensation. The generated voltage is used as the

reference power supply for the internal circuitry of the IC.

This block can output load current of up to 1 mA from the reference voltage VREF pin (pin 6).

(2) Triangular wave oscillator block (OSC)

The triangular wave oscillator builds the capacitor for frequency setting into, and generates the triangular wave

oscillation waveform by connecting the frequency setting resistor with the RT pin (pin 17). The triangular wave

is input to the PWM comparator on the IC.

Triangular wave oscillation frequency: fosc

fosc (kHz) := 17000 / RT (kΩ)

(3) Error amplifier block (Error Amp1)

This amplifier detects the output signal from the current detection amplifier (Current Amp1) and outputs a PWM

control signal.

In addition, a stable phase compensation can be made available to the system by connecting the resistor and

the capacitor to the COMP1 pin.

(4) Error amplifier block (Error Amp2)

This amplifier detects the output signal from the current detection amplifier (Current Amp2), compares this to

the output signal from the charge current control circuit, and outputs a PWM control signal to be used in controlling

the charge current.

In addition, a stable phase compensation can be made available to the system by connecting the resistor and

the capacitor to the COMP2 pin.

(5) Error amplifier block (Error Amp3)

This error amplifier (Error Amp3) detects the output voltage from the DC/DC converter, compares this to the

output signal from the VO REFIN controller circuit, and outputs the PWM control signal.

Arbitrary output voltage from 2 Cell to 4 Cell can be set by connecting an external resistor of charging voltage

to ADJ3 pin (pin 16).

In addition, a stable phase compensation can be made available to the system by connecting the resistor and

the capacitor to the COMP3 pin.

(6) Current detection amplifier block (Current Amp1)

The current detection amplifier (Current Amp1) amplifies the voltage difference between +INC1 pin (pin 24)

and -INC1 pin (pin 1) 25 times and the signal is output to the following error amplifier (Error Amp1) .

(7) Current detection amplifier block (Current Amp2)

The current detection amplifier (Current Amp2) detects a voltage drop on the both ends of the output sense

resistor (RS) due to the flow of the charge current, using the +INC2 pin (pin 13) and BATT pin (pin 12) . The

signal amplified to 25 times is output to the following error amplifier (Error Amp2) .

MB39A134

DS04-27264-2E 15

(8) PWM comparator block (PWM Comp.)

The PWM comparator circuit (PWM Comp.) is a voltage-pulse width converter for controlling the output duty of

the error amplifiers (Error Amp1 to Error Amp3) depending on their output voltage.

The PWM comparator circuit compares the triangular wave voltage generated by the triangular wave oscillator

with the error amplifier output voltage and turns on the external output transistor (MOS FET) , during the interval

in which the triangular wave voltage is lower than the error amplifier output voltage.

(9) Output block (OUT)

The output circuit uses a totem-pole configuration capable of driving an external P-ch MOS FET.

The output “L” level sets the output amplitude to 6 V (Typ) using the voltage generated by the bias voltage block

(VH) .

This results in increasing conversion efficiency and suppressing the withstand voltage of the connected external

transistor (MOSFET) even in a wide range of input voltages.

(10) Power supply control block (CTL)

Setting the CTL pin (pin 14) to “L” level places the IC in the standby mode. During the standby mode, only AC

adapter detection function is operated. (The supply current is 6 µA at typical in the standby mode.)

CTL function table

(11) Bias voltage block (VH)

The bias voltage circuit outputs VVCC − 6 V (Typ) as the minimum potential of the output circuit. In the standby

mode, this circuit outputs the potential equal to VVCC.

2. Protection Functions

(1) Under voltage lockout protection circuit block (UVLO)

The transient state or a momentary decrease in supply voltage or internal reference voltage (VREF pin) ,

which occurs when the power supply (VCC pin) is turned on, may cause malfunctions in the control IC, resulting

in breakdown or deterioration of the system.

To prevent such malfunction, the under voltage lockout protection circuit detects internal reference voltage drop

and fixes the OUT pin (pin 20) to the “H” level. The system restores when the power supply and the internal

reference reaches less than the threshold voltage of the lockout protection circuit at the low voltage level.

Protection circuit (UVLO) operation function table

When UVLO is operating (VCC or VREF voltage is lower than UVLO threshold voltage.), the logic of the following

pin is fixed at the value shown.

CTL Power AC adapter detection

L OFF (Standby) ON (Active)

H ON (Active) ON (Active)

pin OUT

Status H

MB39A134

16 DS04-27264-2E

(2) Over temperature detection

The circuit protects an IC from heat-destruction. If the temperature at the joint part reaches +150 °C, the circuit

changes the level of OUT pin to “H”, and stops the voltage output.

In addition, if the temperature at the joint part drops to +125 °C, the output restarts again.

Therefore, make sure to design the DC/DC power supply system so that the over heating protection does not

start frequently.

3. Detection Functions

AC adapter voltage detection block (AC Comp.)

The AC adapter voltage detection block (AC Comp.) detects that ACIN pin voltage is below 1.25 V (Typ)

and sets ACOK pin in the AC adapter voltage detection block to Hi-Z. In addition, a higher voltage from either

VCC pin or VIN pin is supplied as the IC power supply.

AC adapter detection voltage setting

VIN = Low to High

Vth = (R1 + R2) / R2 × 1.27 V

VIN = High to Low

Vth = (R1 + R2) / R2 × 1.25 V

ACIN

7

ACOK

<AC Comp.>

AC adapter

R1

R2

+

−

Micro

controller

5

ACIN ACOK

HL

LHi-Z

MB39A134

DS04-27264-2E 17

4. Setting the Charge Voltage

The charge voltage (DC/DC output) is set by the input voltage to ADJ3 pin (pin 16) and CELLS pin (pin 11) .

The ADJ3 pin (pin 16) can set charge voltage per cell. An arbitrary charge voltage is set when external resistor

is set. It doesn't need external resistor when ADJ3 pin (pin 16) is input to VREF level or GND level by internal

high accurate reference voltage. The CELLS pin (pin 11) can set the series battery number when the pin is input

VREF, OPEN or GND level.

The setting of ADJ3 pin (pin 16), CELLS pin (pin 11) and charge voltage (DC/DC output) is shown below.

• ADJ3 pin internal circuit

ADJ3 Input Voltage CELLS Charge Voltage Note

VREF pin

(ADJ3 ≥ 4.6 V)

OPEN 8.4 V 2 Cell × 4.20 V/Cell

GND 12.6 V 3 Cell × 4.20 V/Cell

VREF 16.8 V 4 Cell × 4.20 V/Cell

GND pin

(ADJ3 ≤ 0.2 V)

OPEN 8.2 V 2 Cell × 4.10 V/Cell

GND 12.3 V 3 Cell × 4.10 V/Cell

VREF 16.4 V 4 Cell × 4.10 V/Cell

External voltage setting

(ADJ3 = 0.4 V to 4.4 V)

OPEN 4 × ADJ3 pin voltage 2 Cell × 2 × ADJ3 pin voltage/Cell

GND 6 × ADJ3 pin voltage 3 Cell × 2 × ADJ3 pin voltage/Cell

VREF 8 × ADJ3 pin voltage 4 Cell × 2 × ADJ3 pin voltage/Cell

16

ADJ3

SELECTOR

Comparator_A

Comparator_B

LOGIC

2.1 V

2.05 V

To Error Amp3

VA

VA

4.5 V

0.3 V

+

−

+

−

MB39A134

18 DS04-27264-2E

5. Setting the Charge Current

The Error amplifier block (Error Amp2) compares the output voltage of charge current control block set by ADJ2

pin (pin 9) with the output signal from the current detection amplifier (current Amp2) , and outputs a PWM

control signal to be used in controlling the maximum charge current for battery. When the current overflows the

rated value, the current will be constantly charged to the rated value, and the charge voltage will drop.

Battery charge current setting voltage : ADJ2

• ADJ2 pin internal circuit

Upper limit of charge current Io = Charge current control block output voltage voltage (V) − 0.075

Current detection amplifier block voltage gain (25.0 V/V Typ) ×

sense resistor RS (Ω)

ADJ2 Input Voltage

Charge Current

Control Block

Output Voltage

Charge Current

RS = 40 mΩRS = 20 mΩRS = 15 mΩ

VREF

(ADJ2 > 4.6 V) 1.5 V 1.425 A 2.85 A 3.79 A

External Voltage Setting

(ADJ2 = GND to 4.4 V)

VADJ2

(V)

VADJ2-0.075

(A)

2 × (VADJ2-0.075)

(A)

2.66 × (VADJ2-0.075)

(A)

9

ADJ2

Selector

Comparator_C

1.5 V

To Error Amp2

4.5 V

+

−

MB39A134

DS04-27264-2E 19

• Example of charge current setting (RS = 40 mΩ)

V

ADJ2

Io

4.59 V

1.425 A

4.325 A

V

VREF

0 V

4.4 V

Internal reference voltage setting when ADJ2 = 4.6 V to VREF

External setting when ADJ2 = 0 V to 4.4 V

4.41 V

100

200

300

400

500

600

Io (mA)

200 300 400 500 600

V

ADJ2

(mV)

Io = 0 mA at V

ADJ2

= 0 V

Min V

ADJ2

> 50 mV at Io = 0 mA

Max V

ADJ2

< 100 mV at Io = 0 mA

Typ V

ADJ2

= 75 mV at Io = 0 mA

100

Error (MB39A134) < ±25 mA

At R

S

= 40 mΩ,

+INC1 = 3 V to VCC

MB39A134

20 DS04-27264-2E

6. Setting Dynamically-Controlled-Charging

By connecting as shown in the example of the figure below, the AC adopter voltage (VIN) drops and becomes

the calculated Vth, and then, the dynamically-controlled charging loop reduce the charge current to keep a

settled power level.

AC adopter voltage in dynamically controlled charging mode:

VREF : Reference voltage (5.0 V Typ) AV : Current detection amplifier block voltage gain (25.0 V/V Typ)

Vth = VREF × (1 − 1 × R4 ) × R1 + R2

AVR3 + R4 R2

<Error Amp1>

<Current Amp1>

24

3

1

V

IN

+INC1

ADJ1

−INC1

VREF (5 V)

R1

R2 R3

R4

+

−

−

+

MB39A134

DS04-27264-2E 21

■TRANSIT RESPONSE WHEN A LOAD CHANGES SUDDENLY

The constant voltage control loop and the constant current control loop are independent each other and when

a load changes suddenly, these two control loops switch over each other.

Overshoot of the battery voltage and current is generated by the delay in the control loop when changing the

mode.

The delay time is determined by the phase compensation components values.

When the constant current control switches over to the constant voltage control when removing the battery, the

control period with higher duty than the rated charge voltage occurs, resulting in voltage overshoot. In such a

period, since the battery is removed, no excessive voltage should be applied to the battery.

When the constant voltage control switches over to the constant current control when installing the battery, the

control period with higher duty than the rated charge current occurs, resulting in current overshoot.

For MB39A134, it can not be as current overshoot with 10 ms or less.

Battery Current

Error Amp2 Output

Low VoltageConstant Current

Error Amp3 Output

Error Amp2 OutputError Amp3 Output

Battery Voltage

Constant Current

10 ms

When the charge control switches

over from the constant current control

to the constant voltage control, the

control period with higher duty than

the rated charge voltage occurs,

resulting in voltage overshoot. For MB39A134, it can not be

as current overshoot with 10

ms or less.

MB39A134

22 DS04-27264-2E

■CONNECTION WITHOUT USING THE CURRENT AMP1, CURRENT AMP2 AND

THE ERROR AMP1, ERROR AMP2

When Current Amp1, 2 or Error Amp1, 2 are not used, please connect it as follows.

• +INC1 pin (pin 24), -INC1 pin (pin 1), ADJ1 pin (pin 3), and ADJ2 pin (pin 9) are connected with the VREF pin.

• +INC2 pin (pin 13) is connected with the pin BATT pin (pin 12).

• OUTC1 pin (pin 2) and OUTC2 pin (pin10) open.

1

24

2

10

6

13

12

3

9

4

8

OUTC1

VREF

+INC1

OUTC2

-INC1

ADJ1

ADJ2

COMP1

COMP2

+INC2

BATT

“OPEN”

“OPEN”

“OPEN”

“OPEN”

MB39A134

DS04-27264-2E 23

■INPUT/OUTPUT PIN EQUIVALENT CIRCUIT DIAGRAM

(Continued)

14

GND

33.1 k

Ω

51 kΩ

CTL

VCC

VCC VCC

6VREF

GND

GND

GND

GND

37.27 kΩ

12.10 kΩ

21

23 23

17 RT

6

23

VREF

VREF VREF

VREF

2

OUTC1

OUTC1 OUTC2

3ADJ1

COMP1

COMP3

6

23

4

VREF

GND

GND GND

10

OUTC2

+INE2 +INE3

COMP2

6

23

8

VREF

-INE3

+INC1 +INC2

-INC1

6

23

15

24

2

1

40 k

Ω

10 k

Ω

21

23

6

13

10

12

BATT

21

23

6

7.7 kΩ

40 kΩ

10 kΩ

<Reference voltage block> <Control bloc>

<Triangular wave oscillator block> <Error amplifier block (Error Amp1) >

<Error amplifier block (Error Amp2) > <Error amplifier block (Error Amp3) >

<Current detection amplifier block (Current Amp1) > <Current detection amplifier block (Current Amp2) >

ESD protection

component

MB39A134

24 DS04-27264-2E

(Continued)

VREF

GND

GND

CT

COMP1

COMP2

COMP3

20 OUT

VH

VCC

VCC

GND

GND GND

VIN

ACIN ACOK

VREF

6

4

8

15

23

21

19

23

5

7

23

21

18

19 VH

100 kΩ16

VCC

ADJ3 +INE3

23

21

23

6

SELECTER

4.5V

0.3V

<PWM comparator block> <Output block>

<AC adapter detection block>

<Bias voltage block> <Charge voltage setting block>

MB39A134

DS04-27264-2E 25

(Continued)

9

GND

GND

GND

ADJ2

23

VREF

VREF

6

4.5 V

11

6

CELLS

23

12

BATT

SELECTER

+INE2

-INE3

1 MΩ

1 MΩ

<Charge current setting block>

<Cell switch block>

MB39A134

26 DS04-27264-2E

■TYPICAL APPLICATION CIRCUIT

23

24

22

21

20

19

18

17

16

15

14

13

2

1

3

4

5

6

7

8

9

10

11

12

R2

CDRH104R-150

D1

MBRA340T3

R26

L1

15 µH

SGND

MB39A134

+INC2

CTL

COMP3

ADJ3

RT

VIN

VH

OUT

VCC

CVM

GND

+INC1

BATT

CELLS

OUTC2

ADJ2

COMP2

ACIN

VREF

ACOK

COMP1

ADJ1

OUTC1

−INC1

C20 *2

R34 *2

*2

DTr2 *2

R25 *1

VSYS

Wire short

R1

TPCA8102

Q2B

TPCA8102

Q2A

VIN

GND

ACOK

CTL

SW1-1

C17 *2

R48 *2

R47

100 kΩ

R27

10 kΩ

Q3

TPCA8102

Q1-2 *2

Q1-1

C10 *2

C14

*2

R19

*2

R18

0 Ω

C11

0.1 µF

22 µF

20 mΩ

47 kΩ

R30 *1

C3C2

OUTC2

OUTC1

C15

SW1-2

SW1-2

off

IO

2.85 A

ADJ2

VREF

CELLS

ACOFF

CVM

+INC1

5 V

−INC1

18 V

GND

Vo

DTr1

DTC144EET1G

R9

10 kΩC9

0.001 µF

C1

10 µF

0.22

µF

C13 *2

R10

10 kΩC12

0.001 µF

R17

*2

R16

100 kΩ

R14

100 kΩ

R7

100 kΩ

R8

cut

R15

10 kΩ

C7

0.1 µF

C21

0.1 µF

C6

0.1 µF

R12

*1

R6

*1

R32 *1

R35 *1

R28 *1

C19 *2

C5 *2

R4

1 kΩ

R5

56 kΩ

*1 Patterm short

*2 Not mounted

R46

0 Ω

R13

*2

C8

*2

R11

cut

R23

200 kΩ

R24

100 kΩ

R20

6.2 kΩ

R22

10 kΩ

R21

91 kΩ

R43

11 kΩ

R45

100 kΩ

R44

240 kΩ

C4

0.022 µF

µPA2714GR

Place R12 = 0 Ω for output 4.2 V/Cell.

Place R13 = 0 Ω for output 4.1 V/Cell.

Place R18 = 0 Ω for 4 Cells operation.

Place R19 = 0 Ω for 3 Cells operation.

Open R18 & R19 2 Cells operation.

MB39A134

DS04-27264-2E 27

• Parts list

(Continued)

Com-

ponent Item Specification Vendor Package Parts No. Remarks

M1 IC MB39A134 FML TSSOP-24 ⎯

Q1-1 P-ch FET VDS = − 20 V,

ID = 7 A (Max) NEC SOP-8 µPA2714GR

Q1-2 P-ch FET ⎯⎯⎯ ⎯Not mounted

Q2A P-ch FET VDS = − 30 V,

ID = 40 A (Max) TOSHIBA SOP

Advance TPCA8102

Q2B P-ch FET VDS = − 30 V,

ID = 40 A (Max) TOSHIBA SOP

Advance TPCA8102

Q3 P-ch FET VDS = − 30 V,

ID = 40 A (Max) TOSHIBA SOP

Advance TPCA8102

DTr1 Transistor VCEO = 50 V ON Semi SC-75 DTC144EET1G

DTr2 Transistor ⎯⎯⎯ ⎯Not mounted

D1 Diode

VF = 0.45 V

(Max)

at IF = 3 A

ON Semi RMDS MBRA340T3

L1 Inductor 15 µH 50 mW

Irms = 3.1 A SUMIDA SMD CDRH104R-150

C1 Ceramic Capacitor 10 µF (25 V) TDK 3225 C3225X5R1E106K

C2 Ceramic Capacitor 22 µF (25 V) TDK 3225 C3225JC1E226M

C3 Ceramic Capacitor ⎯⎯⎯ ⎯Not mounted

C4 Ceramic Capacitor 0.022 µF (50 V) TDK 1608 C1608JB1H223K

C5 Ceramic Capacitor ⎯⎯⎯ ⎯Not mounted

C6 Ceramic Capacitor 0.1 µF (50 V) TDK 1608 C1608JB1H104K

C7 Ceramic Capacitor 0.1 µF (50 V) TDK 1608 C1608JB1H104K

C8 Ceramic Capacitor ⎯⎯⎯ ⎯Not mounted

C9 Ceramic Capacitor 0.001 µF (50 V) TDK 1608 C1608JB1H102J

C10 Ceramic Capacitor ⎯⎯⎯ ⎯Not mounted

C11 Ceramic Capacitor 0.1 µF (50 V) TDK 1608 C1608JB1H104K

C12 Ceramic Capacitor 0.001 µF (50 V) TDK 1608 C1608JB1H102J

C13 Ceramic Capacitor ⎯⎯⎯ ⎯Not mounted

C14 Ceramic Capacitor ⎯⎯⎯ ⎯Not mounted

C15 Ceramic Capacitor 0.22 µF (25 V) TDK 1608 C1608JB1H224K

C17 ⎯⎯⎯⎯⎯Not mounted

C19 Ceramic Capacitor ⎯⎯⎯ ⎯Not mounted

C20 Ceramic Capacitor ⎯⎯⎯ ⎯Not mounted

C21 Ceramic Capacitor 0.1 µF (50 V) TDK 1608 C1608JB1H104K

MB39A134

28 DS04-27264-2E

(Continued)

Com-

ponent Item Specification Vendor Package Parts No. Remarks

R1 Resistor 0 ΩMac-Eight SMD MJP-0.2 Wire short

R2 Resistor 20 mΩKOA SL1 SL1TTE20L0D

R4 Resistor 1 kΩSSM 1608 RR0816P102D

R5 Resistor 56 kΩSSM 1608 RR0816P563D

R6 Resistor ⎯⎯⎯ ⎯Pattern short

R7 Resistor 100 kΩSSM 1608 RR0816P104D

R8 Resistor ⎯⎯⎯ ⎯Pattern cut

R9 Resistor 10 kΩSSM 1608 RR0816P103D

R10 Resistor 10 kΩSSM 1608 RR0816P103D

R11 Resistor ⎯⎯⎯ ⎯Pattern cut

R12 Resistor ⎯⎯⎯ ⎯Pattern short

R13 Resistor ⎯⎯⎯ ⎯Not mounted

R14 Resistor 100 kΩSSM 1608 RR0816P104D

R15 Resistor 10 kΩSSM 1608 RR0816P103D

R16 Resistor 100 kΩSSM 1608 RR0816P104D

R17 Resistor ⎯⎯⎯ ⎯Not mounted

R18 Resistor 0 ΩKOA 1608 RK73Z1J

R19 Resistor ⎯⎯⎯ ⎯Not mounted

R20 Resistor 6.2 kΩSSM 1608 RR0816P622D

R21 Resistor 91 kΩSSM 1608 RR0816P913D

R22 Resistor 10 kΩSSM 1608 RR0816P103D

R23 Resistor 200 kΩSSM 1608 RR0816P204D

R24 Resistor 100 kΩSSM 1608 RR0816P104D

R25 Resistor ⎯⎯⎯ ⎯Pattern short

R26 Resistor 47 kΩSSM 1608 RR0816P473D

R27 Resistor 10 kΩSSM 1608 RR0816P103D

R28 Resistor ⎯⎯⎯ ⎯Pattern short

R30 Resistor ⎯⎯⎯ ⎯Pattern short

R32 Resistor ⎯⎯⎯ ⎯Pattern short

R34 ⎯⎯⎯⎯⎯Not mounted

R35 Resistor ⎯⎯⎯ ⎯Pattern short

R43 Resistor 11 kΩSSM 1608 RR0816P113D

R44 Resistor 240 kΩSSM 1608 RR0816P244D

R45 Resistor 100 kΩSSM 1608 RR0816P104D

R46 Resistor 0 ΩKOA 1608 RK73Z1J

MB39A134

DS04-27264-2E 29

(Continued)

Note : These components are recommended based on the operating tests authorized.

FML : Fujitsu Microelectronics Limited

NEC : NEC Corporation

TOSHIBA : TOSHIBA Corporation

ON Semi : ON Semiconductor Corporation

SUMIDA : SUMIDA Corporation

TDK : TDK Corporation

Mac-Eight : Mac-Eight Co.,Ltd

KOA : KOA Corporation

SSM : SUSUMU Co.,Ltd

MATSUKYU : Matsukyu Co.,Ltd

Compo-

nent Item Specification Vendor Package Parts No. Remarks

R47 Resistor 100 kΩSSM 1608 RR0816P104D

R48 ⎯⎯⎯⎯⎯Not mounted

SW1 DIP SW SW MATSUKYU SMD DMS-2H

PIN Wiring Pin WT-2-1 Mac-Eight ⎯WT-2-1 11-pin

MB39A134

30 DS04-27264-2E

■APPLICATION NOTE

• Inductor selection

The inductance value should be selected, as a reference, so that the peak-to-peal value of the inductor ripple

current is 50% or less of the maximum charge current. In such a case, the inductance value can be obtained as

follows :

L : Inductance value [H]

IOMAX : Max. charge current [A]

LOR : Peak-to-peak value of inductor ripple current - max. charge current ratio (0.5)

VIN : Switching system power supply voltage [V]

VO : Charge voltage [V]

fosc : Switching frequency [Hz]

The minimum charge current value (critical current value) without backward inductor current can be obtained

as follow :

IOC : Critical current [A]

L : Inductance value [H]

VIN : Switching system power supply voltage [V]

VO : Charge voltage [V]

fosc : Switching frequency [Hz]

To judge that the current passing through the inductor is below a rated value, it is necessary to obtain a maximum

current value passing through the inductor. The maximum inductor current value can be obtained as follows :

ILMAX : Max. inductor current [A]

IoMAX : Max. charge current [A]

∆IL : Peak-to-peak value of inductor ripple current [A]

L ≥ VIN − VO × VO

LOR × IOMAX VIN × fOSC

IOC = VO × VIN − VO

2 × LVIN × fOSC

ILMAX ≥ IoMAX + ∆IL

2

MB39A134

DS04-27264-2E 31

• Switching FET selection

If MB39A134 is used for the charger for a notebook PC, since the output voltage of an AC adapter, which is the

input voltage of an switching FET, is 25 V or less, in general, a 30 V class MOS FET can be used as the switching

FET. Obtain the maximum value of the current flowing through the switching FET in order to determine whether

the current flowing through the switching FET is within the rated value. The maximum current flowing through

the switching FET can be found by the following formula.

IDMAX : Max. switching FET drain current [A]

IOMAX : Max. charge current [A]

∆IL : Peak-to-peak value of inductor ripple current [A]

In addition, to judge that permissible switching FET loss is below the rated value, it is necessary to obtain the

switching FET loss.

To reduce switching FET loss as much as possible. when selecting a switching FET, take into consideration that

the continuity loss is equal to the switching loss.

The switching FET continuity loss can be obtained by the following formula:

PRon : Switching FET continuity loss [W]

IO : Charge current [A]

VIN : Switching system power supply voltage [V]

VO : Charge voltage [V]

Ron : Switching FET on resistance [Ω]

∆IL ≥ VIN − VO × VO

LVIN × fOSC

IDMAX ≥ IoMAX + ∆IL

2

PRon = VO × IO2 × Ron

VIN

∆IL

0

Io

MAX

I

OC

IL

MAX

Inductor current

Varies depending on a load current.

Time

MB39A134

32 DS04-27264-2E

The switching FET switching loss can be obtained simply as follows :

PSW : Switching FET switching loss [W]

ILMIN = Iomax − ∆IL / 2 : Lower value of inductor current [A]

ILMAX = Iomax + ∆IL / 2 : Upper value of inductor current [A]

VIN : Switching system power supply voltage [V]

fosc : Switching frequency [Hz]

Tr : Switching FET turn-on time [s]

Tf : Switching FET turn-off time [s]

• Flyback diode selection

Select the shot-key barrier diode (Flyback diode) with a small forward voltage as much as possible.

To judge that the current passing through the flyback diode is below the rated value, it is necessary to obtain

the value of peak current passing through the flyback diode. The maximum current value of the flyback diode

can be obtained as follows :

If : Forward current [A]

IOMAX : Max. charge current [A]

∆IL : Peak-to-peak value of inductor ripple current [A]

Furthermore, to judge that permissible flyback diode loss is below a rated value, it is necessary to obtain the

flyback diode loss. The flyback diode loss can be obtained as follows :

PSBD : Flyback diode loss [W]

IOMAX : Max. charge current [A]

VIN : Switching system power supply voltage [V]

VO : Charge voltage [V]

Vf : Forward voltage [V]

PSW = 1 × VIN × ILMIN × fosc × Tr + 1 × VIN × ILMAX × fosc × Tf

22

If ≥ IoMAX + ∆IL

2

PSBD = IoMAX × (1 − VO) × Vf

VIN

MB39A134

DS04-27264-2E 33

• Output capacitor selection

Since a high ESR causes the output ripple voltage to increase, a low-ESR capacitor is needs to be used in order

to reduce the output ripple voltage. Use a capacitor that has sufficient ratings to surge current generated when

the battery is inserted or removed. Generally, the ceramic capacitor is used as the output capacitor.

With the switching ripple voltage taken into consideration, the minimum capacitance required can be found by

the following formula.

Co : Output capacitor [F]

ESR : Serial resistance of output capacitor [Ω]

∆VO : Switching ripple voltage [V]

∆IL : Peak-to-peak value of inductor ripple current [A]

fosc : Switching frequency [Hz]

Since an overshoot occurs in the DC/DC converter output voltage when a battery being charged is removed,

use a capacitor having sufficient withstand voltage. Generally, the capacitor having a rated withstand voltage

higher than the maximum input voltage is sued.

Moreover, use a capacitor having sufficient tolerance for allowable ripple current. The allowable ripple current

required can be found by the following formula.

Irms : Acceptable ripple current (effective value) [A]

∆IL : Peak-to-peak value of inductor ripple current [A]

Co ≥ 1

2π × fosc × ( ∆VO − ESR)

∆IL

Irms ≥ ∆IL

2 √ 3

MB39A134

34 DS04-27264-2E

• Input capacitor selection

Select an input capacitor that has an ESR as small as possible. A ceramic capacitor is ideal. If a highcapacitance

capacitor is needed for which there is no suitable ceramic capacitor use a polymer capacitor or a tantalum

capacitor having a low ESR.

The ripple voltage by the switching operation of the DC/DC converter is generated in the power supply voltage.

Please consider the lower limit value of the input capacitor according to the allowable ripple voltage. The ripple

voltage of the power supply can be easily found by the following formula.

∆VIN : Peak-to-peak value of switching system power supply ripple voltage [V]

IOMAX : Maximum charge current [A]

CIN : Input capacitor [F]

VIN : Switching system power supply voltage [V]

VO : Charge voltage [V]

fOSC : Switching frequency [Hz]

ESR : Series resistance component of input capacitor [Ω]

∆IL : Peak-to-peak value of inductor ripple current [A]

The ripple voltage of the power supply can be decreased by raising the switching frequency besides using the

capacitor.

The capacitor has the features in the frequency, temperature and bias voltage, so that the effect capacitance

can be extremely small depending on the use conditions.

Please choose the one of having the enough margin for the input voltage and ripple current to ratings of the

capacitor.

The acceptable ripple current is given by the following formula.

Irms : Acceptable ripple current (effective value) [A]

IOMAX : Maximum charge current [A]

VIN : Switching system power supply voltage [V]

VO : Charge voltage [V]

∆VIN = IOMAX × VO + ESR × (IOMAX + ∆IL )

CIN VIN × fOSC 2

Irms ≥ IOMAX × VIN

√ VO × (VIN − VO)

MB39A134

DS04-27264-2E 35

• Designing phase compensation circuit

(1) Constant voltage (CV) mode phase compensation circuit

It is common to connect a 1-pole-1-zero phase compensation circuit to the output pin (COMP3) of the error

amplifier 3 (gm amplifier). When a low-ESR capacitor, such as a ceramic capacitor, is used as the output

capacitor, it is easier for the DC/DC converter to oscillate as the phase delay approaches 180 degrees due to

the resonance frequency of LC. In this situation, perform phase compensation by connecting a RC phase lead

compensator to the COMP3 pin, and between the -INE3 pin and the BATT pin.

1pole-1zero phase compensation circuit

Rc (Ω) and Cc (F) of the phase lead circuit can be obtained by the following formula.

IO : Charge current [A]

VIN : Switching system power supply voltage [V]

L : Inductance value of inductor [H]

Co : Output capacitor value [F]

VO : Charge voltage [V]

In this situation, the crossover frequency [Hz] can be obtained by the following formula.

RC := IO × √L

190 × 10−6 × VIN Co

CC := RC

fCO := 1 × 10−5 × VIN

VO × CC

Vrefint1

VO

COMP3

Rc

R1

R2

Cc

BATT

Error

Amp3

−

+

12

15 To PWM

Comp.

√ L × Co

MB39A134

36 DS04-27264-2E

(2) Constant current (CC) mode phase compensation circuit

Since the output capacitor impedance has a small influence to the loop response characteristics in this mode,

the phase compensation circuit with 1pole-1zero is normally connected to the output pin (COMP2) of the error

amplifier 2 (gm amplifier) .

1pole-1zero phase compensation circuit

Rc (Ω) and Cc (F) of the phase lead circuit can be obtained by the following formula.

Rs : Resistance value of charge current detection [Ω]

VIN : Switching system power supply voltage [V]

L : Inductance value [H]

Co : Output capacitance value [F]

fCO : Crossover frequency [Hz]

RC := 1.2 × 104 × fCO × L

Rs × VIN

CC := RC

Vrefint2

COMP2

Rc

Current Amp2

Rs

Cc

Error

Amp2

BATT

+INC2

−

+

−

+

12

13

To PWM

Comp.

√ L × Co

MB39A134

DS04-27264-2E 37

• Allowable loss, and thermal design

In general, the allowable loss and thermal design of this IC can be ignored because this IC is highly effective.

However, when this IC is used with high power supply voltage, high switching frequency, high load, or high

temperature, it is necessary to take account of the allowable loss and thermal design while using this IC.

The IC internal loss (PIC) can be found by the following formula.

PIC = VCC × (ICC + Qg × fOSC)

PIC : IC's Internal loss [W]

VCC : Power supply voltage (VIN) [V]

ICC : Power supply current [A] (4.0 mA Max)

Qg : Total amount of charges of all switching FETs [C] (when Vgs = 6 V)

fOSC : Switching frequency [Hz]

The temperature at the joint part (Tj) can be obtained as follows :

Tj = Ta + θja × PIC

Tj : Joint part temperature [ °C]

Ta : Ambient temperature [ °C]

θja : TSSOP-24 package thermal resistance (78 °C / W)

PIC : IC's internal loss [W]

MB39A134

38 DS04-27264-2E

• Board layout

When designing the layout, consider the points listed below. Take account of the following points when designing

the board layout.

• Place a GND plane on the IC mounting surface whenever possible. Connect the controller GND to PGND only

at one point of PGND in order to prevent a large current path from passing the controller GND.

• Connect to the input capacitor (CIN) , switching FET, flyback diode, inductor (L) , sense resistance (Rs) , and

the output capacitor (Co) on the surface layer. Do not connect to them via any through-hole.

• For a loop compased of input capacitors (CIN), switching FET and flyback diode, minimize its current loop.

When minimizing routing and loops, give priority to this loop over others.

• Connect GND pins of the input capacitor (CIN) , flyback diode, and the output capacitor (Co) to GNDs on the

inner layer via the through holes by making them close to the pins.

• Large currents momentarily flow through the nets of the OUT pin, which are connected to the switching FET

gate. Use a wiring width of about 0.8 mm and minimize the length of routing.

• Place the bypass capacitor connected to VCC, VIN, VREF, and VH pins, and the resistance connected to the

RT pin as close to the respective pins as possible. Moreover, connect the bypass capacitor and the GND pins

of the VCC, VIN, and VREF of the fOSC:setting resistance in close proximity to the GND pin of the IC. (Strengthen

the connection to the internal layer GND by making through-holes in close proximity to each of the GND pin

of the IC, terminals of bypass capacitors, terminals of the fosc setting resistors.)

• Since nets of −INC1, +INCx, BATT, COMPx, and RT pins are sensitive to noise, make wiring for them as shortly

as possible, and keep them away from switching system parts as much as possible.

• The remote sensing (Kelvin connection) of the routing of the +INC2 and BATT pins are very sensitive to noise.

Therefore, make their routing close to each other and keep the routing as far away from switching components

as possible.

GND

VCC

PGND

GND

PGND

VREF

VH RT

VIN

Cin

Co

L

VIN

VO

PGND

Rs

GND wiring example Switching system part arrangement example

Through hole connecting of GND

and PGND at a single point

Surface layer

Inner layer

Inner layer

Surface layer

Feedback line

To BATT

To +INC2

Flyback diode

Switching FET

MB39A134

DS04-27264-2E 39

■REFERENCE DATA

Unless explained specially, the measurement conditions are VIN = 19 V, IO = 2.85 A, Li+ battery 4 Cell, and

Ta = + 25 °C.

(Continued)

Conversion efficiency vs. Charging current

(Constant voltage mode) Charging voltage vs. Charging current

Conversion efficiency η (%)

Charging voltage Vo (V)

Charging current Io (A) Charging current Io (A)

Conversion efficiency vs. Charging voltage

(Constant current mode)

Conversion efficiency η(%)

Charging voltage Vo (V)

Switching waveform

(Constant voltage mode) Switching waveform

(Constant current mode)

80

82

84

86

88

90

92

94

96

98

100

0.0 0.5 1.0 1.5 2.0 2.5 3.0

3 Cells

4 Cells

2 Cells

0

2

4

6

8

10

12

14

16

18

20

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

SW1-2 = OFF

4 Cells

3 Cells

2 Cells

0246810 12 14 16 18

50

55

60

65

70

75

80

85

90

95

100

1

µs

/div

V

LX

V

OUT

I

O

= 1.5 A

V

LX

(V)

V

OUT

(V)

0

10

20

5

15 0

5

10

15

0

VLX

(V)

10

20

5

15 0

VOUT

(V)

5

10

15

1 µs/div

VLX

VOUT

VO = 10 V

MB39A134

40 DS04-27264-2E

(Continued)

Start and stop

(Constant voltage mode)

Start and stop

(Constant current mode)

Load-step response

(Constant voltage mode)

Battery insertion

Load-step response

(Constant voltage mode)

Battery removal

Load-step operation response

(Constant current mode)

Battery insertion

Load-step operation response

(Constant current mode)

Battery removal

V

O

I

O

V

CTL

20 ms/div

5

10

0

5

0

2

15

V

O

(V)

V

CTL

(V)

I

O

(A)

V

O

I

O

V

CTL

4 ms/div

5

10

0

5

0

2

15

V

O

(V)

V

CTL

(V)

I

O

(A)

20 ms/div

IO

VO

CV to CV

14

16

VO

(V)

0

IO(A)

1

18

20

20 ms/div

IO

VO

CV to C V

14

16

VO

(V)

0

IO(A)

1

18

20

20 ms/div

I

O

V

O

CV to CC

14

16

V

O

(V)

0

I

O

(A)

1

18

20

2

3

20 ms/div

IO

VO

CC to CV

14

16

VO

(V)

0

IO(A)

1

18

20

2

3

MB39A134

DS04-27264-2E 41

■USAGE PRECAUTION

1. Do not configure the IC over the maximum ratings

lf the lC is used over the maximum ratings, the LSl may be permanently damaged.

It is preferable for the device to be normally operated within the recommended usage conditions. Usage outside

of these conditions can have a bad effect on the reliability of the LSI.

2. Use the devices within recommended operating conditions

The recommended operating conditions are the recommended values that guarantee the normal operations of

LSI.

The electrical ratings are guaranteed when the device is used within the recommended operating conditions

and under the conditions stated for each item.

3. Printed circuit board ground lines should be set up with consideration for common

impedance

4. Take appropriate measures against static electricity

• Containers for semiconductor materials should have anti-static protection or be made of conductive material.

• After mounting, printed circuit boards should be stored and shipped in conductive bags or containers.

• Work platforms, tools, and instruments should be properly grounded.

• Working personnel should be grounded with resistance of 250 kΩ to 1MΩ in series between body and ground.

5. Do not apply negative voltages

The use of negative voltages below −0.3 V may cause the parasitic transistor to be activated on LSI lines,

which can cause malfunctions.

■ORDERING INFORMATION

■EV BOARD ORDERING INFORMATION

■RoHS COMPLIANCE INFORMATION OF LEAD (Pb) FREE VERSION

The LSI products of Fujitsu microelectronics with “E1” are compliant with RoHS Directive , and has observed

the standard of lead, cadmium, mercury, hexavalent chromium, polybrominated biphenyls (PBB) , and polybro-

minated diphenyl ethers (PBDE) .

A products whose part number has trailing characters “E1” is RoHS compliant.

Part number Package Remarks

MB39A134PFT-❏❏❏E1 24-pin plastic TSSOP

(FPT-24P-M08) Lead Free version

EV board part No. EV board version No. Remarks

MB39A134EVB-01D MB39A134EVB-01 Rev1.0 TSSOP-24

MB39A134

42 DS04-27264-2E

■MARKING FORMAT (LEAD FREE VERSION)

XXXX

XXX

Lead Free version

INDEX

MB39A134

DS04-27264-2E 43

■LABELING SAMPLE (LEAD FREE VERSION)

2006/03/01

ASSEMBLED IN JAPAN

G

QC PASS

(3N) 1MB123456P-789-GE1

1000

(3N)2 1561190005 107210

1,000

PCS

0605 - Z01A

1000

1/1

1561190005

MB123456P - 789 - GE1

MB123456P - 789 - GE1

MB123456P - 789 - GE1

Pb

Lead-free mark

JEITA logo JEDEC logo

The part number of a lead-free product has the trailing

characters “E1”.

MB39A134

44 DS04-27264-2E

■MB39A134PFT-❏❏❏E1

RECOMMENDED CONDITIONS OF MOISTURE SENSITIVITY LEVEL

[Mounting Conditions]

(1) IR (infrared reflow)

(2) Manual soldering (partial heating method)

Conditions : Temperature 400 °C Max

Times : 5 s max/pin

Item Condition

Mounting Method IR (infrared reflow) , Manual soldering (partial heating method)

Mounting times 2 times

Storage period

Before opening Please use it within two years after

Manufacture.

From opening to the 2nd

reflow Less than 8 days

When the storage period after

opening was exceeded

Please process within 8 days

after baking (125 °C, 24H)

Storage conditions 5 °C to 30 °C, 70%RH or less (the lowest possible humidity)

260 °C

(e)

(d')

(d)

255 °C

170 °C

190 °C

RT (b)

(a)

(c)

to

Main heating

Note : Temperature : the top of the package body

“H” level : 260 °C Max

(a) Temperature Increase gradient : Average 1 °C/s to 4 °C/s

(b) Preliminary heating : Temperature 170 °C to 190 °C, 60 s to 180 s

(c) Temperature Increase gradient : Average 1 °C/s to 4 °C/s

(d) Peak temperature : Temperature 260 °C Max; 255 °C or more, 10 s or less

(d’) Main Heating : Temperature 230 °C or more, 40 s or less

or

Temperature 225 °C or more, 60 s or less

or

Temperature 220 °C or more, 80 s or less

(e) Cooling : Natural cooling or forced cooling

M rank : 250 °C Max

MB39A134

DS04-27264-2E 45

■PACKAGE DIMENSION

Please confirm the latest Package dimension by following URL.

http://edevice.fujitsu.com/package/en-search/

24-pin plastic TSSOP Lead pitch 0.50 mm

Package width

×

package length

4.4 × 6.5 mm

Lead shape Gullwing

Sealing method Plastic mold

Mounting height 1.10 mm MAX

Weight 0.08 g

Code

(Reference) P-TSSOP24-4.4×6.5-0.50

24-pin plastic TSSOP

(FPT-24P-M08)

(FPT-24P-M08)

C

2002 FUJITSU LIMITED F24031S-c-1-1

6.50±0.10(.256±.004)

4.40±0.10 6.40±0.20

(.252±.008)

(.173±.004)

1.05±0.05 (Mounting height)

0.08(.003)

0.50(.020) 0.22±0.05

(.009±.002)

1 12

24 13

"A"

0.07 (Stand off)

0.17±0.05

(.007±.002)

M

0.10(.004)

Details of "A" part

0~8˚

(.024±.006)

0.60±0.15 0.25(.010)

0.50(.020)

INDEX

+0.03

–0.07

+.001

–.003

.003

(.041±.002)

*

1

*

2

Dimensions in mm (inches).

Note: The values in parentheses are reference values.

©2002-2008 FUJITSU MICROELECTRONICS LIMITED F24031S-c-1-2

Note 1) *1 : These dimensions include resin protrusion.

Note 2) *2 : These dimensions do not include resin protrusion.

Note 3) Pins width and pins thickness include plating thickness.

Note 4) Pins width do not include tie bar cutting remainder.

MB39A134

46 DS04-27264-2E

■CONTENTS

page

-DESCRIPTION .............................................................................................................................................................. 1

-FEATURES .................................................................................................................................................................... 1

-APPLICATIONS ............................................................................................................................................................. 1

-PIN ASSIGNMENT ....................................................................................................................................................... 2

-PIN DESCRIPTIONS .................................................................................................................................................... 3

-BLOCK DIAGRAM ........................................................................................................................................................ 4

-ABSOLUTE MAXIMUM RATINGS ............................................................................................................................. 5

-RECOMMENDED OPERATING CONDITIONS ....................................................................................................... 6

-ELECTRICAL CHARACTERISTICS .......................................................................................................................... 7

-TYPICAL CHARACTERISTICS .................................................................................................................................. 11

-FUNCTIONAL DESCRIPTION .................................................................................................................................... 13

-TRANSIT RESPONSE WHEN A LOAD CHANGES SUDDENLY ........................................................................ 21

- CONNECTION WITHOUT USING THE CURRENT AMP1, CURRENT AMP2 AND

THE ERROR AMP1, ERROR AMP2 ......................................................................................................................... 22

-INPUT/OUTPUT PIN EQUIVALENT CIRCUIT DIAGRAM ..................................................................................... 23

-TYPICAL APPLICATION CIRCUIT ............................................................................................................................ 26

-TYPICAL APPLICATION CIRCUIT ............................................................................................................................ 27

-APPLICATION NOTE ................................................................................................................................................... 30

-REFERENCE DATA ..................................................................................................................................................... 39

-USAGE PRECAUTION ................................................................................................................................................ 41

-ORDERING INFORMATION ....................................................................................................................................... 41

-EV BOARD ORDERING INFORMATION ................................................................................................................. 41

-RoHS COMPLIANCE INFORMATION OF LEAD (Pb) FREE VERSION ............................................................. 41

-MARKING FORMAT (LEAD FREE VERSION) ........................................................................................................ 42

-LABELING SAMPLE (LEAD FREE VERSION) ........................................................................................................ 43

-MB39A134PFT-❏❏❏E1 RECOMMENDED CONDITIONS OF MOISTURE SENSITIVITY LEVEL ............... 44

-PACKAGE DIMENSION ............................................................................................................................................... 45

MB39A134

DS04-27264-2E 47

MEMO

MB39A134

FUJITSU MICROELECTRONICS LIMITED

Shinjuku Dai-Ichi Seimei Bldg. 7-1, Nishishinjuku 2-chome, Shinjuku-ku,

Tokyo 163-0722, Japan Tel: +81-3-5322-3347 Fax: +81-3-5322-3387

http://jp.fujitsu.com/fml/en/

For further information please contact:

North and South America

FUJITSU MICROELECTRONICS AMERICA, INC.

1250 E. Arques Avenue, M/S 333

Sunnyvale, CA 94085-5401, U.S.A.

Tel: +1-408-737-5600 Fax: +1-408-737-5999

http://www.fma.fujitsu.com/

Europe

FUJITSU MICROELECTRONICS EUROPE GmbH

Pittlerstrasse 47, 63225 Langen,

Germany

Tel: +49-6103-690-0 Fax: +49-6103-690-122

http://emea.fujitsu.com/microelectronics/

Korea

FUJITSU MICROELECTRONICS KOREA LTD.

206 KOSMO TOWER, 1002 Daechi-Dong,

Kangnam-Gu,Seoul 135-280

Korea

Tel: +82-2-3484-7100 Fax: +82-2-3484-7111

http://www.fmk.fujitsu.com/

Asia Pacific

FUJITSU MICROELECTRONICS ASIA PTE LTD.

151 Lorong Chuan, #05-08 New Tech Park,

Singapore 556741

Tel: +65-6281-0770 Fax: +65-6281-0220

http://www.fujitsu.com/sg/services/micro/semiconductor/

FUJITSU MICROELECTRONICS SHANGHAI CO., LTD.

Rm.3102, Bund Center, No.222 Yan An Road(E),

Shanghai 200002, China

Tel: +86-21-6335-1560 Fax: +86-21-6335-1605

http://cn.fujitsu.com/fmc/

FUJITSU MICROELECTRONICS PACIFIC ASIA LTD.

10/F., World Commerce Centre, 11 Canton Road

Tsimshatsui, Kowloon

Hong Kong

Tel: +852-2377-0226 Fax: +852-2376-3269

http://cn.fujitsu.com/fmc/tw

All Rights Reserved.

The contents of this document are subject to change without notice.

Customers are advised to consult with sales representatives before ordering.

The information, such as descriptions of function and application circuit examples, in this document are presented solely for the purpose

of reference to show examples of operations and uses of FUJITSU MICROELECTRONICS device; FUJITSU MICROELECTRONICS

does not warrant proper operation of the device with respect to use based on such information. When you develop equipment incorporat-

ing the device based on such information, you must assume any responsibility arising out of such use of the information.

FUJITSU MICROELECTRONICS assumes no liability for any damages whatsoever arising out of the use of the information.

Any information in this document, including descriptions of function and schematic diagrams, shall not be construed as license of the use

or exercise of any intellectual property right, such as patent right or copyright, or any other right of FUJITSU MICROELECTRONICS

or any third party or does FUJITSU MICROELECTRONICS warrant non-infringement of any third-party's intellectual property right or

other right by using such information. FUJITSU MICROELECTRONICS assumes no liability for any infringement of the intellectual

property rights or other rights of third parties which would result from the use of information contained herein.

The products described in this document are designed, developed and manufactured as contemplated for general use, including without

limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured

as contemplated (1) for use accompanying fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect

to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in

nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in

weapon system), or (2) for use requiring extremely high reliability (i.e., submersible repeater and artificial satellite).

Please note that FUJITSU MICROELECTRONICS will not be liable against you and/or any third party for any claims or damages arising

in connection with above-mentioned uses of the products.

Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by

incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current

levels and other abnormal operating conditions.

Exportation/release of any products described in this document may require necessary procedures in accordance with the regulations of

the Foreign Exchange and Foreign Trade Control Law of Japan and/or US export control laws.

The company names and brand names herein are the trademarks or registered trademarks of their respective owners.

Edited Business & Media Promotion Dept.