SPECIFICATION Device Name : Type Name : Spec. No. Feb. 09 '05 S.Miyashita Feb. 09 '05 T.Miyasaka K.Yamada : Y.Seki IGBT MODULE 2MBI200U4H-120 MS5F 6035 MS5F6035 1 a 13 H04-004-07b R e v i s e d Date Classification Feb.-09 -'05 Enactment Oct.-25-'05 Revision Ind. Content R e c o r d s Applied date Drawn Issued date a Revised characteristics VCE(sat) (P4/13) Checked Checked Approved T.Miyasaka K.Yamada S.Miyashita O.Ikawa MS5F6035 K.Yamada Y.Seki T.Miyasaka a 2 13 H04-004-06b 2MBI200U4H-120 1. Outline Drawing ( Unit : mm ) 2. Equivalent circuit MS5F6035 a 3 13 H04-004-03a o 3. Absolute Maximum Ratings ( at Tc= 25 C unless otherwise specified ) Items Symbols Collector-Emitter voltage Gate-Emitter voltage Conditions VCES VGES Collector current Ic Continuous Icp 1ms Tc=25oC o Tc=80 C Tc=25oC o Tc=80 C -Ic -Ic pulse Pc Tj Tstg 1ms Collector Power Dissipation 1 device Junction temperature Storage temperature Isolation between terminal and copper base (*1) Viso AC : 1min. voltage Screw Mounting (*2) Terminals (*3) Torque (*1) All terminals should be connected together when isolation test will be done. (*2) Recommendable Value : Mounting 2.5 to 3.5 Nm (M5 or M6) (*3) Recommendable Value : Terminals 3.5 to 4.5 Nm (M6) Maximum Units Ratings 1200 V 20 V 300 200 600 A 400 200 400 1040 W +150 o C -40 to +125 2500 VAC 3.5 4.5 Nm o 4. Electrical characteristics ( at Tj= 25 C unless otherwise specified ) Items Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Turn-on time Turn-off time Forward on voltage Symbols ICES IGES VGE(th) VCE(sat) (terminal) VCE(sat) (chip) Cies ton tr tr(i) toff tf VF (terminal) VF (chip) trr Conditions VCE=1200V VGE=0V VCE=0V VGE=20V VCE=20V Ic=200mA Ic=200A VGE=15V min. o Tj=25 C o Tj=125 C o Tj=25 C Tj=125oC VCE=10V,VGE=0V,f=1MHz Vcc=600V Ic=200A VGE=15V RG=3.0 IF=200A VGE=0V Reverse recovery time IF=200A Lead resistance, R lead terminal-chip (*4) (*4) Biggest internal terminal resistance among arm. Tj=25oC o Tj=125 C o Tj=25 C o Tj=125 C Characteristics typ. max. Units - - 2.0 mA - - 400 nA 4.5 6.5 8.5 V - MS5F6035 a a 2.10 2.30 1.90 2.10 22 0.32 0.10 0.03 0.41 0.07 1.80 1.90 1.65 1.75 0.53 a 2.25 2.05 1.20 0.60 1.00 0.30 1.95 1.80 0.35 - V nF us V us m a 4 13 H04-004-03a 5. Thermal resistance characteristics Items Symbols Thermal resistance(1device) Conditions min. - IGBT FWD Rth(j-c) Characteristics typ. max. 0.12 0.20 Contact Thermal resistance Rth(c-f) with Thermal Compound 0.025 (1 device) (*5) (*5) This is the value which is defined mounting on the additional cooling fin with thermal compound. Units o C/W 6. Indication on module Logo of production 2MBI200U4H-120 200A 1200V Lot.No. Place of manufacturing (code) 7. Applicable category This specification is applied to IGBT-Module named 2MBI200U4H-120. 8. Storage and transportation notes * The module should be stored at a standard temperature of 5 to 35oC and humidity of 45 to 75% . * Store modules in a place with few temperature changes in order to avoid condensation on the module surface. * Avoid exposure to corrosive gases and dust. * Avoid excessive external force on the module. * Store modules with unprocessed terminals. * Do not drop or otherwise shock the modules when transporting. 9. Definitions of switching time 90% 0V 0V V GE L tr r Ir r 0V 0A V CE Ic 90% Ic 90% 10% 10% RG VCE V cc 10% VCE tr ( i ) V GE Ic tr tf to f f to n 10. Packing and Labeling Display on the packing box - Logo of production - Type name - Lot No - Products quantity in a packing box MS5F6035 a 5 13 H04-004-03a 11. Reliability test results Reliability Test Items Test categories Test items Mechanical Tests Test methods and conditions (Aug.-2001 edition) 1 Terminal Strength (Pull test) 2 Mounting Strength 3 Vibration 4 Shock 1 High Temperature Storage 2 Low Temperature Storage 3 Temperature Humidity Storage 4 Unsaturated Pressurized Vapor Environment Tests Reference Number Acceptnorms of ance EIAJ ED-4701 sample number 5 Temperature Cycle Pull force Test time Screw torque : 40N : 101 sec. : 2.5 ~ 3.5 Nm (M5) 3.5 ~ 4.5 Nm (M6) Test time : 101 sec. Range of frequency : 10 ~ 500Hz Sweeping time : 15 min. Acceleration : 100m/s2 Sweeping direction : Each X,Y,Z axis Test time : 6 hr. (2hr./direction) Maximum acceleration : 5000m/s2 Pulse width : 1.0msec. Direction : Each X,Y,Z axis Test time : 3 times/direction Storage temp. : 1255 Test duration : 1000hr. Storage temp. : -405 Test duration : 1000hr. Storage temp. : 852 Relative humidity : 855% Test duration : 1000hr. Test temp. : 1202 Test humidity : 855% Test duration : 96hr. Test temp. : Test Method 401 Method Test Method 402 method 5 (0:1) 5 (0:1) Test Method 403 Reference 1 Condition code B 5 (0:1) Test Method 404 Condition code B 5 (0:1) Test Method 201 5 (0:1) Test Method 202 5 (0:1) Test Method 103 Test code C 5 (0:1) Test Method 103 Test code E 5 (0:1) Test Method 105 5 (0:1) Test Method 307 method Condition code A 5 (0:1) Low temp. -405 High temp. 125 5 Number of cycles RT 5 ~ 35 : High ~ RT ~ Low ~ RT 1hr. 0.5hr. 1hr. 0.5hr. : 100 cycles Test temp. : Dwell time 6 Thermal Shock High temp. 100 +0 -5 +5 -0 Low temp. 0 Used liquid : Water with ice and boiling water Dipping time : 5 min. par each temp. Transfer time : 10 sec. Number of cycles : 10 cycles MS5F6035 a 6 13 H04-004-03a Reliability Test Items Test categories Test items Test methods and conditions (Aug.-2001 edition) 1 High temperature Reverse Bias Test temp. Bias Voltage Bias Method Endurance Endurance Tests Tests Reference Number Acceptnorms of ance EIAJ ED-4701 sample number Test duration 2 High temperature Bias (for gate) Test temp. Test duration : Ta = 1255 (Tj 150 ) : VC = VGE = +20V or -20V : Applied DC voltage to G-E VCE = 0V : 1000hr. Test temp. Relative humidity Bias Voltage Bias Method : : : : Test duration ON time OFF time Test temp. : : : : Number of cycles : Bias Voltage Bias Method 3 Temperature Humidity Bias 4 Intermitted Operating Life (Power cycle) ( for IGBT ) Test Method 101 5 (0:1) Test Method 101 5 (0:1) Test Method 102 Condition code C 5 (0:1) Test Method 106 5 (0:1) : Ta = 1255 (Tj 150 ) : VC = 0.8xVCES : Applied DC voltage to C-E VGE = 0V : 1000hr. 852 oC 855% VC = 0.8xVCES Applied DC voltage to C-E VGE = 0V 1000hr. 2 sec. 18 sec. Tj=1005 deg Tj 150 , Ta=255 15000 cycles Failure Criteria Item Characteristic Symbol Electrical Leakage current ICES characteristic IGES Gate threshold voltage VGE(th) Saturation voltage VCE(sat) Forward voltage VF Thermal IGBT VGE resistance or VCE FWD VF Isolation voltage Viso Visual Visual inspection inspection Peeling Plating and the others Failure criteria Unit Lower limit Upper limit LSLx0.8 - USLx2 USLx2 USLx1.2 USLx1.2 USLx1.2 USLx1.2 mA A mA V V mV USLx1.2 Broken insulation mV - The visual sample Note - LSL : Lower specified limit. USL : Upper specified limit. Note : Each parameter measurement read-outs shall be made after stabilizing the components at room ambient for 2 hours minimum, 24 hours maximum after removal from the tests. And in case of the wetting tests, for example, moisture resistance tests, each component shall be made wipe or dry completely before the measurement. MS5F6035 a 7 13 H04-004-03a Reliability Test Results Mechanical Tests Test categorie s Test items 1 Terminal Strength (Pull test) 2 Mounting Strength Number Reference Number of norms of test failure EIAJ ED-4701 sample (Aug.-2001 edition) sample Test Method 401 5 0 5 0 Method Test Method 402 method 3 Vibration Test Method 403 5 0 4 Shock Condition code B Test Method 404 5 0 Environment Tests Condition code B 1 High Temperature Storage Test Method 201 5 0 2 Low Temperature Storage Test Method 202 5 0 3 Temperature Humidity Storage 4 Unsaturated Pressurized Vapor Test Method 103 5 * 5 0 5 Temperature Cycle Test Method 105 5 0 6 Thermal Shock Test Method 307 5 0 1 High temperature Reverse Bias Test Method 101 5 * Test Method 101 5 0 Test Method 102 5 * 5 0 Test code C Test Method 103 Test code E method Endurance Tests Condition code A 2 High temperature Bias ( for gate ) 3 Temperature Humidity Bias Condition code C 4 Intermitted Operating Life (Power cycling) ( for IGBT ) Test Method 106 * under confirmation MS5F6035 a 8 13 H04-004-03a Collector current vs. Collector-Emitter voltage (typ.) Tj=25oC / chip Collector current vs. Collector-Emitter voltage (typ.) Tj=125oC / chip 500 VGE=20V 15V 400 12V Collector current : Ic [A ] Collector current : Ic [ A ] 500 300 10V 200 100 VGE=20V 15V 400 12V 300 10V 200 100 8V 8V 0 0 0 1 2 3 4 Collector-Emitter voltage : VCE [ V ] 5 0 5 Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25oC / chip Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 500 10 Tj=25oC Tj=125oC 400 Collector-Emitter voltage : VCE [ V ] Collector current : Ic [ A ] 1 2 3 4 Collector-Emitter voltage : VCE [ V ] 300 200 100 0 8 6 4 Ic=400A Ic=200A Ic=100A 2 0 0 1 2 3 4 Collector-Emitter voltage : VCE [ V ] 5 5 Capacitance vs. Collector-Emitter voltage (typ.) 10 15 20 Gate-Emitter voltage : VGE [ V ] 25 Dynamic Gate charge (typ.) Vcc=600V, Ic=200A, Tj=25oC o VGE=0V, f=1MHz, Tj=25 C Collector- Emitter voltage : VCE[ 200V/div ] Gate-Emitter voltage : VGE [ 5V/div ] Capacitance : Cies, Coes, Cres [ nF ] 100.0 Cies 10.0 Cres 1.0 Coes 0.1 0 10 20 Collector-Emitter voltage : VCE [ V ] 30 VGE VCE 0 0 200 400 600 800 Gate charge : Qg [ nC ] MS5F6035 9 1000 a 13 H04-004-03a Switching time vs. Collector current (typ.) Vcc=600V, VGE=15V, RG=3.0, Tj=25oC Switching time vs. Collector current (typ.) Vcc=600V, VGE=15V, RG=3.0, Tj=125oC 10000 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] 10000 1000 toff ton tr 100 tf 1000 ton toff tr 100 10 10 0 100 200 300 Collector current : Ic [ A ] 400 0 10000 30 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] 100 200 300 Collector current : Ic [ A ] ton 1000 toff tr 100 tf 10 1 10 100 Gate resistance : RG [ ] 400 Switching loss vs. Collector current (typ.) Vcc=600V, VGE=15V, RG=3.0 Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=200A, VGE=15V, Tj=25oC 1000 Eoff(125oC) 25 20 Eon(125ooC) Err(125o C) Eoff(25 C) 15 Eon(25oC) 10 Err(25oC) 5 0 0 Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=200A, VGE=15V, Tj=125oC 50 100 150 200 250 300 Collector current : Ic [ A ] 350 400 Reverse bias safe operating area (max.) +VGE=15V, -VGE <= 15V, RG >= 3.0, Tj <= 125oC 50 500 40 400 Eon 30 Collector current : Ic [ A ] Switching loss : Eon, Eoff, Err [ mJ/pulse ] tf Eoff 20 10 300 200 100 Err 0 0 1 10 100 Gate resistance : RG [ ] 1000 0 400 800 1200 Collector-Emitter voltage : VCE [ V ] MS5F6035 1600 a 10 13 H04-004-03a Forward current vs. Forward on voltage (typ.) chip Reverse recovery characteristics (typ.) Vcc=600V, VGE=15V, RG=3.0 1000 400 Tj=25oC 300 Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] Forward current : IF [ A ] 500 o Tj=125 C 200 100 0 Irr(125oC) Irr(25oC) trr(125oC) trr(25oC) 100 10 0 1 2 3 Forward on voltage : VF [ V ] 4 0 100 200 300 Forward current : IF [ A ] 400 Transient thermal resistance (max.) Thermal resistance : Rth(j-c) [ oC/W ] 1.000 FWD IGBT 0.100 0.010 0.001 0.001 0.010 0.100 Pulse width : Pw [ sec ] 1.000 MS5F6035 a 11 13 H04-004-03a Warnings - This product shall be used within its absolute maximum rating (voltage, current, and temperature).This product may be broken in case of using beyond the ratings. - Connect adequate fuse or protector of circuit between three-phase line and this product to prevent the equipment from causing secondary destruction, such as fire, its spreading, or explosion. - Use this product after realizing enough working on environment and considering of product's reliability life. This product may be broken before target life of the system in case of using beyond the product's reliability life. - If the product had been used in the environment with acid, organic matter, and corrosive gas ( hydrogen sulfide, sulfurous acid gas), the product's performance and appearance can not be ensured easily. - Use this product within the power cycle curve (Technical Rep.No. : MT5F12959). Power cycle capability is classified to delta-Tj mode which is stated as above and delta-Tc mode. Delta-Tc mode is due to rise and down of case temperature (Tc), and depends on cooling design of equipment which use this product. In application which has such frequent rise and down of Tc, well consideration of product life time is necessary. (No.: MT5F12959)Tj Tc(Tc) - Never add mechanical stress to deform the main or control terminal. The deformed terminal may cause poor contact problem. - Use this product with keeping the cooling fin's flatness between screw holes within 100um at 100mm and the roughness within 10um. Also keep the tightening torque within the limits of this specification. Too large convex of cooling fin may cause isolation breakdown and this may lead to a critical accident. On the other hand, too large concave of cooling fin makes gap between this product and the fin bigger, then, thermal conductivity will be worse and over heat destruction may occur. 100mm100um10um - In case of mounting this product on cooling fin, use thermal compound to secure thermal conductivity. If the thermal compound amount was not enough or its applying method was not suitable, its spreading will not be enough, then, thermal conductivity will be worse and thermal run away destruction may occur. Confirm spreading state of the thermal compound when its applying to this product. (Spreading state of the thermal compound can be confirmed by removing this product after mounting.) () - It shall be confirmed that IGBT's operating locus of the turn-off voltage and current are within the RBSOA specification. This product may be broken if the locus is out of the RBSOA. RBSOARBSOA - If excessive static electricity is applied to the control terminals, the devices may be broken. Implement some countermeasures against static electricity. MS5F6035 12 a 13 H04-004-03a Warnings - Never add the excessive mechanical stress to the main or control terminals when the product is applied to equipments. The module structure may be broken. - In case of insufficient -VGE, erroneous turn-on of IGBT may occur. -VGE shall be set enough value to prevent this malfunction. (Recommended value : -VGE = -15V) -VGE-VGE : -VGE = -15V) - In case of higher turn-on dv/dt of IGBT, erroneous turn-on of opposite arm IGBT may occur. Use this product in the most suitable drive conditions, such as +VGE, -VGE, RG to prevent the malfunction. dv/dt +VGE, -VGE, RG - This product may be broken by avalanche in case of VCE beyond maximum rating VCES is applied between C-E terminals. Use this product within its absolute maximum voltage. VCESVCE Cautions - Fuji Electric Device Technology is constantly making every endeavor to improve the product quality and reliability. However, semiconductor products may rarely happen to fail or malfunction. To prevent accidents causing injury or death, damage to property like by fire, and other social damage resulted from a failure or malfunction of the Fuji Electric Device Technology semiconductor products, take some measures to keep safety such as redundant design, spread-fire-preventive design, and malfunction-protective design. - The application examples described in this specification only explain typical ones that used the Fuji Electric Device Technology products. This specification never ensure to enforce the industrial property and other rights, nor license the enforcement rights. - The product described in this specification is not designed nor made for being applied to the equipment or systems used under life-threatening situations. When you consider applying the product of this specification to particular used, such as vehicle-mounted units, shipboard equipment, aerospace equipment, medical devices, atomic control systems and submarine relaying equipment or systems,please apply after confirmation of this product to be satisfied about system construction and required reliability. If there is any unclear matter in this specification, please contact Fuji Electric Device Technology Co.,Ltd. MS5F6035 a 13 13 H04-004-03a