! 2N1843A>2N 1850A TR 1010> TR 9010 THYRISTORS T2515 78C 07700 D . ae ee 0 Re ae ee? - malate General purpose SCR sulted for power supplies 'T(RMS) = 16 A/ Tease = 80C up to 400 Hz on resistive or inductive loads. VRRM up to 1 200V. VDRM @ Glass passivated chips. sOvV< = <1200V @ High stability and reliability. VRRM Thyristors a usage gnral, pour des alimentations Case. +0 48 metal (CB-26 jusqu 400 Hz sur charges rsistives ou inductives. Boitier ( 7) @ VaRM jusqua 1 200 V. @ Pastilles giassives. @ Grande stabilit des caractristiques. ys ABSOLUTE RATINGS (LIMITING VALUES) : VALEURS LIMITES ABSOLUES D'UTILISATION Symbol Value Unit RMS on-state current* (RMS) 16 A Courant elficace a |tat passant* @ Tease = 80C Mean on-state current* ITIAV) 10 A Courant moyen a Itat passant* @ Tease = 80C Non repetitive surge peak on-state current** ITSM 157 (t= 8,3ms) A Courant non rptitif de surcharge crte ITSM 160 (t=10 ms) A accidentelle 4 l'tat passant** ey; = 126C i 12 tfor fusing 12 112,5. (t=10 ms) Aes Valeur de la constante 12 t @Tj S 125C Critical rate of rise of on-state current*** . __ Vitesse critique de croissance du courant a l'tat passant*** di/dt 100 Alnus Storage and operating junction temperatures 40 , + 150 Tempratures extrmes de stockage et de* Tstg 40 | + 125 C fonction en fonctionnement J @7j = 125C 2N 2N 2N an 2N 2N TR | TR | TR | TR | TR | TR { TR 4843A | 1844A | 1846A | 1848A | 1849A | 1850A | 6010 | 7010 | 8010 | 9010 1010 | 1110 | 1210 Vporm = Varo ) 50 100 200 300 400 500 600} 700} 800} S00 | 1000 | 1100 | 1200 Thermat resistances . Rsistances thermiques Symbo! Value Unit Junction to case for D.C. . Jonetion-boitier en continu Rh (i-<) 2 *ciw Contact (case to heatsink) Contact (boltier-radiateur) Rih (c-h) 04 Crw * Single phase clrcuit, 180 conduction angle ** Half sine wave * Circuit monophas, angle de conduction 180 ** Demi-onde sinuscidale *** Gate supply 20V/20 0 - tr < 0,1 us - Half sine wave of 6,3 us *** Gnrateur de gachette Demi-sinusoide May 1984 - 1/5 THOMSON SEMICONDUCTORS | 45, avenue de |Europe - 78146 VELIZY - France IN THOMSON | Tl, 1946.97.19 / Tlex :698B66F * 127 COMPONENTS S G S-THOMSON 7ac of 7929237 OOOP?7OL & t , 2N 1843A~ 2N 1850A TR 1010 - TR 9010 : ( 78C O7701 OD GATE CHARACTERISTICS (Maximum values) . on S- / Ss _ CARACTERISTIQUES DE GACHETTE (Valeurs maximales) Pam = 5 W tt=100 ps) IrGM = 2 A (t= 100 ps) Vacm =5V Peay) = 1 W VEGM = 10 V (t= 100 us) . ' ELECTRICAL CHARACTERISTICS . CARACTERISTIQUES ELECTRIQUES Value se Symbol Unit Test conditions min typ max let 80 mA T) = 26C Vp = 12V RL = 330 tp 2 20 us VeT 3 Vv T= 25C Vp = 12V RL = 330 tp 2 20 us Vap 0,25 Vv Tj = 125C Vp = VpRM RAL = 3.3k0 1H 20 mA Tj = 25C IT = 05A Gate open VT 22 v T= 25C ITM = 30A tp = 10ms IDRM 5 mA Tj = 125C VpRM specified IRRM 5 mA Ty = 125C Varn specified Tj = 28C tt = 30A Vp = VpRM ot 2 HS id = 200mA dig/dt = 2A/ps Tj = 125C ly =10A VR = 30V Vp = 0.67 VoRM 4g 100 HS dia/dt=30 A/a dv/dt=20V/us Gate open dv/dt* 100 Vips Ty = 125C Linear slope up to 0,67 VpRM specified * For higher guaranteed values, please consult us. CASE DESCRIPTION DESCRIPTION DU BOITIER @ 240,2 B4+0,2 \ K Cooling method a conduction method C) JT . & Marking : type number 1) Weight: 13,519 Gq_ rH Polarity ; anode to case 7 Stud torque: 3,5 m A\ Nmin-3,8 m A Nmax \ D125 w Thread: % | mar 1/4 - 28 UNF : type N Ee} 2 | | | + M6 on request: type N + suffix M ej} a 8] 4 | + a & : 3 - \ E c. i i | lL E Lt i e | | a A oj} _ I 9/16" over flats 6 sided H) & \ ' 6 pans 9/16" sur plats | E | ~- N | | M6 1/4 - 28 UNF . 16,5 maxi TO 48 meta! (CB-267) 2/5 THOMSON SEMICONDUCTORS 128 S G S-THOMSON 7OC D 5 ?94e942e57? DOO?7Oe & i 2N 1843A ~ 2N 1850A TR 1010 ~ Ke 9010 ~. f \ i i i 78C O7702 D {\. TASS ee (w) AVERAGE POWER DISSIPATION, Pr (ay) 0 5 40 45 20 AVERAGE CURRENT, Ty (av) (A) FIG.4 ~ MAXIMUM ON-STATE POWER DISSIPATION FOR SINUSOIDAL CURRENT WAVEFORM 25 425 120 110 100 90 80 70 60 MAXIMUM ALLOWABLE CASE TEMPERATURE, Tg (C) 50 45 0 5 40 45 20 2s AVERAGE CURRENT, Iy (ay) (A) FIG.2 - MAXIMUM ALLOWABLE CASE TEMPERATURE FOR SINUSGIDAL CURRENT WAVEFORM (w) AVERAGE POWEA DISSIPATION, Py (av) 0 5 40 15 20 AVERAGE CURRENT, Iq (ay) (A) FIG.3 - MAXIMUM ON-STATE POWER DISSIPATION FOR RECTANGULAR. CURRENT WAVEFORM 25 THOMSON SEMICONDUCTORS 125 120 1410 100 90 80 70 60 MAXIMUM ALLOWABLE CASE TEMPERATURE, T, (C) 50 45 9 5 40 45 20 25 AVERAGE CURRENT, Ty (ay) (A) FIG.4 - MAXIMUM ALLOWABLE CASE TEMPERATURE FOR RECTANGULAR CURRENT WAVEFORM 3/5 S G S-THOMSON ?4c D i ?9e9e37? OOOP?7OS ti 2N 1843A 2N 1850A TR 1010 - TR 9010 K 78C 07703 OD T2815 200 500 _ rt _ <= = I Vqa= 0 e _ 400 ~ TsM YR = - Itsm Ya = Varu ~~ ~~ - Hw . E - = e WwW) = a ut ac gq a ac ao c . oO ut w & e E << wo ke I ? 6 g 10 wu 100 > un <= a =a ao wn Ww uicd a 4 E FOR Loss oo a CALCULATIONS uZ @ USE : BE H a Vip = 4-2 =V ae QH ry = 33 mo. 4 30 o 4 2 3 4 & 6&6 7 8B 4 2 5 40 INSTANTANEOUS ON-STATE VOLTAGE, V7 {) PULSE BASE WIDTH, t (ms) FIG.5 - MAXIMUM ON-STATE CONDUCTION FIG.6 - NON REPETITIVE SUB-CYCLE SURGE CHARACTERISTIC (Ty = 425C). ON-STATE CURRENT AND I@t RATING (INITIAL Ty = 425 C). w 450 5 INITIAL Tz < 4125 C = # a vz | wi 100 2 = uy up TH ar Ps wy: mM] wg NA > ae p a 50 ~ H b o PSL a Peet! ft a Zz oO < 0 4 40 102 403 NUMBER OF CYCLES (at 50 Hz} FIG.7 - NON REPETITIVE SURGE PEAK ON-STATE CURRENT VERSUS NUMBER OF CYCLES. 4/5 THOMSON SEMICONDUCTORS 130 SG S-THOMSON TRANSIENT THERMAL IMPEDANCE, Zip, (C/W) FIG.40 - TRANSIENT THERMAL IMPEDANCE JUNCTION TO CASE. 40 4074 4073 7ac D Bf 7ae9237 coo7704 1 ON 1843A 2N 1850A TR 1010 - TR 9010 2K 78C 07704 oD Boor Te OS AS c 1.5 MULTIPLYING FACTOR -40 -20 0 +25 JUNCTION TEMPERATURE, Tz (C) FIG.8 - RELATIVE VARIATION OF GATE TAIGGER CUARENT AND HOLDING CURRENT VEASUS JUNCTION TEMPERATURE. 50 Poy = 5 = 10 o > ul oO <t FE a > 4 wi 5 a Ty = - 40C Ty = + 25C Ty = +425 C 0.4 0.04 0.4 4 2 GATE CURRENT, Ig (A) FIG.8 - GATE TRIGGEA CHARACTERISTICS. Effective thermal Conduction resistance (C/W) angle (x,8) junction to case Sinusoidal Rectangular 480 2.23 2.48 420 2,34 3.09 go 2.47 3.50 60 2.88 3.94 30 3.74 4,94 4072 4074 4 40 TIME, t {s) 5/5 THOMSON SEMICONDUCTORS 131