MBRS3200T3 Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. * * * * * * Small Compact Surface Mountable Package with J-Bend Leads Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction Very High Blocking Voltage - 200 V 150C Operating Junction Temperature Guardring for Stress Protection http://onsemi.com SCHOTTKY BARRIER RECTIFIER 3.0 AMPERE 200 VOLTS Mechanical Characteristics * Case: Epoxy, Molded, Epoxy Meets UL94, VO * Weight: 95 mg (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal * * * * * * * SMB CASE 403A PLASTIC Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260C Max. for 10 Seconds Shipped in 12 mm Tape and Reel, 2500 units per reel Cathode Polarity Band Device Meets MSL 1 Requirements ESD Ratings: Machine Model = A ESD Ratings: Human Body Model = 1C Marking: B320 Pb-Free Package is Available MARKING DIAGRAM B320 B320 = Device Code MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 200 V Average Rectified Forward Current (TL = 120 C) IF(AV) 3.0 A Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 100 A TJ -65 to +150 C Operating Junction Temperature ORDERING INFORMATION Device Package Shipping MBRS3200T3 SMB 2500/Tape & Reel SMB (Pb-Free) 2500/Tape & Reel MBRS3200T3G For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. Semiconductor Components Industries, LLC, 2004 April, 2004 - Rev. 2 1 Publication Order Number: MBRS3200T3/D MBRS3200T3 THERMAL CHARACTERISTICS Characteristic Thermal Resistance - Junction-to-Lead (Note 1) Thermal Resistance - Junction-to-Ambient (Note 2) Symbol Value Unit RJL RJA 13 62 C/W ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 3) (IF = 3.0 A, TJ = 25C) (IF = 4.0 A, TJ = 25C) (IF = 3.0 A, TJ = 150C) VF Maximum Instantaneous Reverse Current (Note 3) (Rated dc Voltage, TJ = 25C) (Rated dc Voltage, TJ = 150C) IR V 0.84 0.86 0.59 5.0 5.0 1. Minimum pad size (0.108 x 0.085 inch) for each lead on FR4 board 2. 1 inch square pad size (1 x 0.5 inch) for each lead on FR4 board 3. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. http://onsemi.com 2 A mA MBRS3200T3 100 TC = 100C TC = 150C 10 IF, FORWARD CURRENT (AMPS) IF, FORWARD CURRENT (AMPS) 100 TC = 25C 1 TC = 100C TC = 25C 1 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.1 1 1.2 0.2 0.3 0.4 0.5 0.6 0.7 0.9 1 1.1 VF, INSTANTANEOUS VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 1.2 1000 IR, REVERSE CURRENT (AMPS) TC = 150C TC = 100C 1.0E-05 TC = 25C f = 1 MHz C, CAPACITANCE (pF) 1.0E-04 Typical Capacitance at 0 V = 209 V 100 1.0E-06 1.0E-07 1.0E-08 TC = 25C 1.0E-09 10 20 40 60 80 100 120 140 160 180 200 20 40 60 80 100 120 140 160 180 200 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current Figure 4. Typical Capacitance 7 6 dc 5 SQUARE WAVE 4 3 2 1 0 90 0 VR, REVERSE VOLTAGE (VOLTS) 100 110 120 130 140 150 160 Pfo, AVERAGE POWER DISSIPATION (W) 0 80 0.8 VF, INSTANTANEOUS VOLTAGE (VOLTS) 1.0E-03 IF, AVERAGE FORWARD CURRENT (AMPS) TC = 150C 10 5 4.5 4 SQUARE WAVE 3.5 dc 3 2.5 2 1.5 1 0.5 0 0 1 2 3 4 5 TL, LEAD TEMPERATURE (C) IO, AVERAGE FORWARD CURRENT (AMPS) Figure 5. Current Derating - Lead Figure 6. Forward Power Dissipation http://onsemi.com 3 6 MBRS3200T3 PACKAGE DIMENSIONS SMB PLASTIC PACKAGE CASE 403A-03 ISSUE D S A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P. D B INCHES DIM MIN MAX A 0.160 0.180 B 0.130 0.150 C 0.075 0.095 D 0.077 0.083 H 0.0020 0.0060 J 0.006 0.012 K 0.030 0.050 P 0.020 REF S 0.205 0.220 C K P MILLIMETERS MIN MAX 4.06 4.57 3.30 3.81 1.90 2.41 1.96 2.11 0.051 0.152 0.15 0.30 0.76 1.27 0.51 REF 5.21 5.59 H J SOLDERING FOOTPRINT* 2.261 0.089 2.743 0.108 2.159 0.085 SCALE 8:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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