MITSUBISHI LASER DIODES
ML9xx45 SERIES
1550,1520nm InGaAsP FP LASER DIODES
TYPE
NAME ML920J45S , ML920K45S, ML920Y45S
ML925B45F , ML925C45F
DESCRIPTION
ML9XX45 series are InGaAsP laser diodes which provide
a stable, single transverse mode oscillation with emission
wavelength of 1550nm and standard continuous light output
of 5mW.
ML9XX45 are hermetically sealed devices having the photo
diode for optical output monitoring. This is suitable for such
applications as FTTH (Fiber to the Home)systems.
FEATURES
•1550 or 1520nm typical emission wavelength, FP-LDs
•Low threshold current, low operating current
•Wide temperature range operation
(Tc=-40 to 85deg.C)
•φ5.6mm TO-CA N package
Flat window cap : ML920J45S, ML925B45F
Ball lens cap : ML920K45S, ML925C45F, ML920Y45S
APPLICATION
•~155Mbps FTTH system
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Conditions Ratings Unit
Po Light output power CW 6[4] mW
VRL Laser reverse voltage - 2 V
VRD PD reverse voltage - 20 V
IFD PD forward current - 2 mA
Tc Operation temperature -
-40 to +85 deg.C
Tstg Storage temperature -
-40 to +100 deg.C
ELECTRICAL/OPTICAL CHARACTERISTICS(Tc=25oC)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Ith Threshold current CW 3 10 20 mA
Iop Operation current CW, Po=5mW[3mW] 10 30 50 mA
Vop Operating voltage CW, Po=5mW[3mW] --- 1.1 1.5 V
η Slope efficiency CW, Po=5mW[3mW] 0.15[0.1] 0.25[0.2] 0.5 mW/mA
-01spec 1520 1550 1580
λc Center wavelength CW, Po=5mW[3mW] -02spec 1495 1520 1544 nm
∆λ Spectral Width CW, Po=5mW, [3mW]RMS(-20dB) --- 1.5 3 nm
θ∥ Beam divergence angle(parallel) CW, Po=5mW[3mW] --- 25[11] --- deg.
θ⊥ Beam divergence angle
(perpendicular) CW, Po=5mW[3mW] --- 30[11] --- deg.
tr,tf Rise and Fall time (10%-90%) Ib=Ith,Po=5mW [3mW],10-90% --- 0.3 0.7 nsec
Im Monitor Current (PD) CW, Po=5mW[3mW], VRD=1V, 0.1 0.5 1.0 mA
Id Dark Current (PD) VRD=10V --- --- 0.1
µA
Ct Capacitance (PD) VRD=10V, f=1MHz --- 10 20 pF
Pf(Note2) CW, PL=3mW,SI10/125
0.2 0.5 --- mW
ML920K45S
ML925C45F 5.0 5.8 6.2
Df(Note2)
Fiber Coupling characteristics
at peak coupling<3> CW, PL=3mW
SI10/125 ML920Y45S 6.0 6.5 7.0
mm
Note : <1> [ ]applied to the lens cap type.
Note : <2> Pf,Df are applied to the ball lens type.
Note : <3> Df is a distance between reference plane of the base to the fiber.
MITSUBISHI
ELECTRIC
May 20
0
4
Notice: Some parametric limits are subject to change.
ML920J45S
ML925B45F
ML920K45S
ML925C45F
MITSUBISHI
ELECTRIC
May 20
0
4
MITSUBISHI LASER DIODES
ML9xx45 SERIES
1550,1520nm InGaAsP FP LASER DIODES
OUTLINE DRAWINGS
Dimension : mm
Dimension : mm
(1)
φ1.0Min.
φ1.5Min.
φ3.55±0.1
φ5.6 +0
-0.03
1.27 ±0.03
0.25±0.03
18 ±1 2.1±0.15
1.2
±0.1
4-φ0.45±0.05
(2)
Ｘ
1±0.1
2-90°
Ｙ
φ2.0±0.25
(P.C.D.)
φ4.25
(3)
(4)
(0.25)
(0.25)
Reference Plane
Emitting Facet
(1) (2)
(Glass)
(1)
φ1.5±0.005
φ3.55±0.1
φ5.6 +0
-0.03
1.27
18 ±1
3.9 ±0.2
1.2
±0.1
4-φ0.45±0.05
(2)
Ｘ
1±0.1
2-90°
Ｙ
φ2.0±0.25
(P.C.D.)
φ4.25
(3)
(4)
(0.25)
(0.25)
Reference Plane
Emitting Facet
(1) (2)
(3.05)
(5.8)
±0.03
Case
(1) (2)
(3)
(4)
PD
LD
Pin Connection
( Top view )
ML920J45S
ML925B45F
Case
(1) (2)
(3)
(4)
PD
LD
Case
(1) (2)
(3)
(4)
PD
LD
Pin Connection
( Top view )
ML920K45S
ML925C45F
Case
(1) (2)
(3)
(4)
PD
LD
ML920Y45S
MITSUBISHI LASER DIODES
ML9xx45 SERIES
1550,1520nm InGaAsP FP LASER DIODES
Dimension : mm
(1)
φ1.5±0.005
φ3.55±0.1
φ5.6 +0
-0.03
1.27
18 ±1
3.6 ±0.2
1.2
±0.1
4-φ0.45±0.05
(2)
Ｘ
1±0.1
2-90°
Ｙ
φ2.0±0.25
(P.C.D.)
φ4.25
(3)
(4)
(0.25)
(0.25)
Reference Plane
Emitting Facet
(1) (2)
(3.0)
(6.5)
±0.03
Case
(1) (2)
(3)
(4)
PD
LD
( Top view )
ML920Y45S
MITSUBISHI
ELECTRIC
May 20
0
4
OUTLINE DRAWINGS
