2N5088/89 / MMBT5088/89 NPN SMALL SIGNAL TRANSISTOR Features * * * * MMBT5088 / MMBT5089 Low Noise High Gain Epitaxial Planar Die Construction Available in both Through-Hole and Surface Mount Packages General Purpose, Low Noise Amplifier SOT-23 A C TOP VIEW C E B E B D G H M K Mechanical Data * * * * * J L 2N5088 / 2N5089 Case: TO-92/SOT-23, Plastic Leads/Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking: TO-92 Type Number SOT-23 MMBT5088 1Q MMBT5089 1R Approx Weight: TO-92 0.18 grams SOT-23 0.008 grams E A Min Max A 0.37 0.51 B 1.19 1.40 C 2.10 2.50 D 0.89 1.05 E 0.45 0.61 G 1.78 2.05 H 2.65 3.05 J 0.013 0.15 K 0.89 1.10 L 0.45 0.61 M 0.076 0.178 All Dimensions in mm B TO-92 C D C B E BOTTOM VIEW H Maximum Ratings Dim G H Dim Min Max A 4.32 4.83 B 4.32 4.78 C 12.50 15.62 D 0.36 0.56 3.94 E 3.15 G 2.29 2.79 H 1.14 1.40 All Dimensions in mm @ TA = 25C unless otherwise specified Characteristic Symbol 2N/MMBT5088 2N/MMBT5089 Unit Collector-Emitter Voltage VCEO 30 25 V Collector- Base Voltage VCBO 35 30 Emitter- Base Voltage VEBO 4.5 V Collector Current IC 100 mA Total Device Dissipation TO-92 (Note 1) SOT-23 (Note 2) Pd 625 350 mW Thermal Resistance, Junction to Ambient TO-92 (Note 1) SOT-23 (Note 2) RqJA 200 357 K/W Thermal Resistance, Junction to Collector RqJC 83.3 K/W Tj, TSTG -55 to +150 C Operating and Storage Temperature Notes: V 1. Valid provided that leads at a distance of 2.0mm from body are kept at specified ambient (TO-92). 2. Device mounted on FR-4 PCB 40 x 40 x 1.5mm.. 3. Pulse test: Pulse width l 300s, duty cycle l 2%. DS21603 Rev. E-3 1 of 2 2N5088/89/MMBT5088/89 Electrical Characteristics @ TA = 25C unless otherwise specified Min 5088 Max 5088 Min 5089 Max 5089 Unit Collector to Emitter Breakdown Voltage (Note 3) V(BR)CEO 30 -- 25 -- V IC = 1.0mA, IB = 0 V(BR)CBO 35 -- 30 -- V IC = 100A, IE = 0 Emitter Cutoff Current IEBO -- 50 100 -- 50 100 nA VEB(OFF) = 3.0V, IC = 0 VEB(OFF) = 4.5V, IC = 0 Collector Cutoff Current ICEX -- 50 -- -- -- 50 nA VCB = 20V, IE = 0 VCB = 15V, IE = 0 DC Current Gain (Note 3) hFE 300 350 300 900 -- -- 400 450 400 1200 -- -- -- IC = 100A, VCE = 5.0V IC = 1.0mA, VCE = 5.0V IC = 10mA, VCE = 5.0V Characteristic Collector to Base Breakdown Voltage Symbol Test Condition Collector-Emitter Saturation Voltage (Note 3) VCE(SAT) -- 0.5 -- 0.5 V IC = 10mA, IB = 1.0mA Base-Emitter "ON" Voltage (Note 3) VBE(ON) -- 0.8 -- 0.8 V IC = 10mA, VCE = 5.0V Collector to Base Capacitance Ccb -- 4.0 -- 4.0 pF Emitter to Base Capacitance Ceb -- 10 -- 10 pF Small Signal Current Gain hfe 350 1400 450 1800 -- Current Gain Bandwidth Product fT 50 -- 50 -- MHz Noise Figure NF -- 3.0 -- 2.0 dB Notes: VCB = 5.0V, IE = 0 f = 100kHz VBE = 0.5V, IC = 0 f = 100kHz IC = 1.0mA, VCE = 5.0V, f = 1.0kHz IC = 500A, VCE = 5.0V, RS = 10kW f = 20MHz IC = 100A, VCE = 5.0V, RS = 10kW, f = 10Hz - 15.7kHz 1. Valid provided that leads at a distance of 2.0mm from body are kept at specified ambient (TO-92). 2. Device mounted on FR-4 PCB 40 x 40 x 1.5mm.. 3. Pulse test: Pulse width l 300s, duty cycle l 2%. DS21603 Rev. E-3 2 of 2 2N5088/89/MMBT5088/89